RIEC. '$Jl" The 2nd CSIS International Symposium on Spintronics-based VLSis. and. Laboratory for Nanoelectronics and Spintronics,
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1 TOHOKU UNIVERSITY CSIS,.4a_.~ Cabinet Office RIEC ~~ M E X T MIUI '$Jl" STRY OF EDUCATION. CULTURE, SPORTS, SCIENCE AND TECHNOLOGY JAPAN The 2nd CSIS International Symposium on Spintronics-based VLSis and The 8th RIEC International Workshop on Spintronics Date: February 2nd and 3rd, 2012 Venue: Laboratory for Nanoelectronics and Spintronics, 4th Floor, Conference Room, Tohoku University, Sendai, Japan
2 PROGRAM Thursday February 2"d, Materials and Devices - Opening 9:00-9:10 Invited talk T1 Opening remarks Hideo Ohno (Tohoku University) Size-dependent sub-volume magnetic excitation in 9:10-9:45 perpendicularly magnetized tunnel junctions and implications for spin-torque-based memory technologies Jonathan Z. Sun (IBM) Invited talk T2 Thermal stability factor of CoFeB/MgO perpendicular magnetic 9:45-10:05 tunnel junctions Hideo Sato, M. Yamanouchi, K. Miura, S. Ikeda, R. Koizumi, F. Matsukura, and H. Ohno (Tohoku University) 10:05-10:20 Coffee Break Invited talk T3 Tetragonal Mn-Ga alloys for MRAM application 10:20-10:55 Shigemi Mizukami (Tohoku University) Invited talk T4 Magnetic properties and tunnel magneto-resistance effect of 10:55-11:30 perpendicularly magnetized L 1 0 -ordered alloys Mikihiko Oogane, M. Hosoda, H. Saruyama, N. I. Khan, G. Kim, N. lnami, H. Naganuma andy. Ando (Tohoku University) Invited talk T5 MRAM concepts for sub-20nm scaling and ultrafast 11:30-12:05 precessional switching 12:05-14:00 14:00-15:30 Ricardo Sousa 1, S. Bandiera 1, M. Marins de Castro 1, B. Lacoste 1, C. Ducruet 2, S. Auffret 1, I. L.Prejbeanu 2, U. Ebels 1, C. Portemont2, L.D. Buda-Prejbeanu 1, B. Rodmacq 1, and B. Dient (1SPINTEC, 2 Crocus) Lunch POSTER SESSION See pages 5 and 6 Invited talk 15:30-16:05 Invited talk 16:05-16:25 T6 T7 STT -MRAM development with 300-mm facilities at LEAP Toshihiro Sugii, M. Aoki, H. Noshiro, T. Ochiai, K. Tsunoda, Y. lba, A. Hatada, M. Nakabayashi, Y. Yamazaki, A. Takahashi, and C. Yoshida (LEAP) Magnetic resonance and switching induced by the Spin Hall effect ,2 Luqiao Liu, C. F. Pai, 0. J. Lee, T. J. Gudmundsen, D. C. Ralph and 1 R. A. Buhrman Ccornell University, 2 Kavli Institute at Cornell) -2-
3 Invited talk T8 Current induced magnetization dynamics in CoFeB/MgO 16:25-17:00 nanostructures Masamitsu Hayashi 1, J. Kim 1, J. Sinha 1, S. Mitani 1, Y. Nakatani 2 S. Fukami 3, M. Yamanouchi 3 and H. Ohno 3 CNIMS, 2 University of Electro-Communications, 3 Tohoku University) 17:00-17:15 Coffee Break Invited talk T9 Current-induced domain wall motion in the presence of 17:15-17:50 spin-orbit coupling Kyung-Jin Lee 1 ' 2 ' 3, S.-M. Sea\ K.-W. Kim 4, J. Ryu 4, and H.-W. Lee 4 CKorea University, 2 NIST, 3 University of Maryland, 4 Pohang University of Science and Technology) Invited talk T10 Magnetoresistance and spin-transfer torque in magnetic tunnel 17:50-18:25 junctions Shinji Yuasa 1 2, K.Yakushiji\ H.Kubota\ A.Fukushima 1 and K.Ando 1 CAIST, 2 1EEE Distinguished Lecturer) Invited talk T11 Racetrack Memory 2.0: a high-performance, storage class 18:25-19:00 memory using perpendicularly magnetized domain-walls manipulated by current Stuart Parkin (IBM) Banquet Barbaresco (Italian restaurant), Sendai Trust City Plaza, 1st floor 19:30-21 :
4 Friday February 3rd, 2012 Spintronics-based LSis Invited talk F1 Restructuring of memory hierarchy in electrical system and 9:00-9:35 no-standby-power nonvolatile logic with STT-RAM technology Tetsuo Endoh (Tohoku University.) Invited talk F2 STT MRAM: Recent strong semiconductor Industry traction 9:35-10:10 Yiming Huai, Y. Zhou, Z. Wang, R. Malmhall, R. Ranjan and J. Zhang (Avalanche Technology) Invited talk F3 Embedded STT-MRAM for advanced mobile system-on-chips: 10:10-10:45 Current status and prospects Seung Kang (Qualcomm) 10:45-11:00 Coffee Break Invited talk F4 SPRAM (SPin-transfer torque RAM) technology for 11 :00-11 :35 environmentally-friendly social innovation Masanori Odaka (Hitachi) Invited talk FS Design considerations for 1T-1STT MT J based embedded 11 :35-12: 10 memory arrays Arijit Raychowdhurv (Intel) 12:10-14:00 Lunch Invited talk F6 Proposal of new MT J-based nonvolatile memories 14:00-14:35 Takashi Ohsawa. Hiraki Koike, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, and Tetsuo Endoh (Tohoku University) Invited talk F7 A content addressable memory using three-terminal magnetic 14:35-14:55 domain wall motion cells Ryusuke Nebashi 1, N. Sakimura 1, Y. Tsuji 1, S. Fukami 2, H. Honjo 1, S. Saito 1, S. Miura 1, N. lshiwata 1, K. Kinoshita 2, T. Hanyu 2, T. Endoh 2, N. Kasai 2, H. Ohno 2, and T. Sugibayashi 1 CNEC, 2 Tohoku University) Invited talk F8 High-density ternary content-addressable memory using 14:55-15:15 MT J-based nonvolatile logic-in-memory architecture Takahiro Hanyu, (Tohoku University) 15:15-15:30 Coffee Break Panel "Spintronics-based VLSis, What remains to be done?" Discussion Moderators : Hideo Ohno (Tohoku University), Tetsuo Endoh (Tohoku University) 15:30-17:00 Panelists : to be announced Closing Closing remarks 17:00-17:05-4-
5 Thursday February 2"d, 2012 POSTER SESSION 14:00-15:30 P1 P2 P3 P4 Effects of rapid thermal annealing on magnetic coupling of chromium-doped indium zinc oxides C.Y. Hsu (National Sun Vat-Sen University) Magneto-optical studies of Co doped amorphous carbon films H. S. Hsu 1, W. Y. Su 1.4, J. S. Lee 1, S. J. Sun 2, P. Y. Chuang 3, and C. H. Lee 3 C National Pingtung University of Education, 2 National University of Kaohsiung, 3 National Tsing-Hua University, 4 National Kaohsiung Normal University) Annealing temperature dependence of tunnel magnetoresistance in MgO magnetic tunnel junctions with thin CoFeB electrodes H. D. Gan 1, S. Ikeda\ M. Yamanouchi\ H. Sato\ K. Miura 1 2, K. Mizunuma\ R. Koizumi\ F. Matsukura 1, and H. Ohno 1 CTohoku University, 2 Hitachi) 8 concentration dependence of magnetic anisotropy in MgO/CoFeB/Ta stack structure R. Koizumi 1, S. Ikeda 1, H. Sato 1, M. Yamanouchi 1, K. Miura 1 2, K. Mizunuma 1, H. D. Gan 1, PS P6 P7 P8 F. Matsukura 1 and H. Ohno 1 CTohoku University, 2 Hitachi) Magnetotransport properties in perpendicular magnetized L 1 0 -CoPt/CoFeB and L 1 0 -FePd/CoFeB magnetic tunnel junctions H. Naganuma, G. Kim, M. Oogane, and Y. Ando (Tohoku University) Crystal symmetry change from rhombohedral and tetragonal by substrate temperature for BiFe0 3 epitaxial films H. Naganuma, K. Mukaiyama, M. Oogane, andy. Ando (Tohoku University) Effect of device temperature on domain wall motion in a perpendicularly magnetized Co/Ni wire H. Tanigawa, K. Suemitsu, Y. Ozaki, T. Suzuki, and E. Kariyada (Renesas Electronics) Energy-assisted oxidation process of Mg layer for MgO-MT Js pg H. Yamamoto 1, T. Morita\ S. lkeda 2, and H. Ohno 2 CULVAC, 2 Tohoku University 2 ) Spin torque diode effect of perpendicularly magnetized CoFeB/MgO/CoFeB magnetic tunnel junctions N. lnami, H. Naganuma, M. Oogane, Y. Ando, S. Ikeda and H. Ohno (Tohoku University) P10 Tailoring nonmagnetic-metals/fe interfaces with perpendicular magnetic P11 anisotropy: A first-principles study Y. Miura, M. Tsujikawa, K. Abe and M. Shirai (Tohoku University) Ultrafast write operation of reconfigurable spin logic block with SPRAM for 3D-stacked reconfigurable spin processor R. Nakazawa 1, H. Kino 1, K. Kiyoyama 2, T. Tanaka\ and M. Koyanagi 1 CTohoku University, 2 Nagasaki Institute of Applied Science) -5-
6 P12 Ab initio study on magnetic anisotropy of L 1 0 -FeNi and FeNi multi layers S. Ozaki, Y. Kuwahara, M. Tsujikawa, Y. Miura, K. Abe and M. Shirai (Tohoku University) P13 Hole concentration dependence of the Curie temperature of (Ga,Mn)Sb channel in field-effect structure S. Akita, F. Matsukura and H. Ohno (Tohoku University) P14 Spin-transfer switching characteristics in magnetic tunnel junctions with synthetic free layers M. Nishimura, M. Oogane, H. Naganuma, N. lnami andy. Ando (Tohoku University) P15 First principles study of interface magnetic anisotropy between transition metal nitride (carbide) and Fe(001) M. Tsujikawa, Y. Miura and M. Shirai (Tohoku University) P16 Perpendicular magnetic anisotropy of Co2FeAI/MgO interfaces D. Mori, M. Tujikawa, Y. Miura, K. Abe and M. Shirai (Tohoku University) P17 7T-2MTJ-Based High-Speed Nonvolatile Fully Parallel TCAM S. Matsunaga, A. Katsumata, M. Natsui, and T. Hanyu (Tohoku University) P18 Design of a Compact MT J/MOS-Hybrid Logic Element for a Nonvolatile Field-Programmable Gate Array D. Suzuki and T. Hanyu (Tohoku University) P19 Magnetic proximity effect of Co2FeAI/(Ga,Mn)As bilayers S. H. Nie 1 2, K. K. Meng 1, L. Chen 1, L. J. Zhu 1, X. Z. Yu\ H. L. Wang\ W. S. Yan 3, Y. G. Zhao 2, and J. H. Zhao 1 CChinese Academy of Sciences, 2 Tsinghua University, 3 University of Science & Technology of China) P20 Nonvolatile Low Power 16-bit/32-bit Binary Counter with MT J and its P21 Scalability S. Togashi, T. Ohsawa and T. Endoh (Tohoku University) A Study for Adopting PMOS Memory Cell for 1T1R STT-RAM with Asymmetric Switching Current MT J H. Koike, T. Ohsawa and T. Endoh (Tohoku University) -6-
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