Workshop. GerALD September 22-23, 2008, Max Planck Institute of Microstructure Physics, Halle. FKZ: 03X5507

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1 Workshop GerALD 2008 September 22-23, 2008, Max Planck Institute of Microstructure Physics, Halle. FKZ: 03X5507

2 About GerALD: The workshop GerALD is primarily dedicated to the research activities in the field of ALD or closely related research areas in Germany. The workshop should give attending scientists and engineers the opportunity to learn about the activities of other research groups and possibly initiate new collaborations. Workshop Location: For Information about the Workshop location, please refer to the Website of our institute: and select About the institute on the left hand side. Organization: The Workshop is organized by the BMBF-Junior Reserch group Functional 3D-Nanostructures by Atomic Layer Deposition and financed by the German Ministry of Education and Research (Bundesministerium für Bildung und Forschung BMBF). Contract Number: 03X5507 Contact information: Dr. Mato Knez Max-Planck-Institute of Microstructure Physics Tel:

3 Monday Sept. 22, Workshop Opening Welcome Address (Mato Knez) Opening Words (Ulrich Gösele) 1st Session Metals Naoufal Bahlawane, University Bielefeld Advances in the CVD of metals, with perspective application in ALD" Thomas Wächtler, Chemnitz university of Technology "Atomic layer deposition of copper and copper oxide thin films for applications in microelectronic metallization systems" Matthias Albert, Dresden University of Technology "Metal and Insulator layers for DRAM applications" 2nd Session Thin Films and Applications Jonathan Eroms, University Regensburg "Transport in Antidot Lattices in Graphene" Yongfeng Mei, IFW Dresden "Rolled-up nanotech and ALD: More Choices" Thomas Riedl, Braunschweig University of Technology "Atomic Layer Deposition for Organic Optoelectronic Devices" 3rd Session Nanostructures Kornelius Nielsch, University of Hamburg ALD of ferromagnetic thin films and nanostructures Alfred Plettl, University of Ulm Periodically ordered nanomasks on Si for the preparation of nanoholes and first results on filling by ALD, PLD, and Electrochemistry Margit Zacharias, Albert-Ludwigs-University Freiburg Nanotube fabrication based on ALD overgrown nanostructures: basic concept and selected examples Mato Knez, MPI Halle Nano- and Microstructuring with ALD Dinner Break & Posters Evening Session Annelies Delabie, IMEC, Belgium Atomic layer deposition of HfO 2 gate dielectric layers on Si, Ge and III-V substrates Steven George, University of Colorado at Boulder, USA Surface Chemistry for Molecular Layer Deposition of Polymers Gregory Parsons, North Carolina State University, USA Chemistry and Applications of Low Temperature (<150 C) ALD."

4 Tuesday Sept. 23, th Session Precursors and Processes Matti Putkonen, Beneq Oy, Herzogenrath, Germany; Vantaa, Finland Atomic layer deposition and characterization of biocompatible hydroxyapatite thin films Sanjay Mathur, University Cologne "Molecule-based Chemical Vapour Deposition: Opportunities and Limitaions in Chemical Design" Anjana Devi, Ruhr-University Bochum "Precursor Chemistry for ALD of High-k Oxides" Elke Erben, Qimonda AG, Dresden CVD Effects in ALD th Session high-k Materials Roman Luptak, Research Center Jülich "ALD of HfO2 on 200/300 mm wafers for gate dielectrics" Susanne Hoffmann-Eifert, Research Center Jülich "Liquid Injection Atomic Layer Deposition of Perovskite-type Multi component Oxide Thin Films for Ferroelectric and Higher-k Three Dimensional Capacitor Structures" Christian Wenger, IHP Microelectronics Frankfurt/Oder "Atomic Vapor Deposition of High-k Metal-Insulator-Metal Capacitors" Florian Speck, Friedrich-Alexander-University Erlangen-Nürnberg "Synthesis and Characterization of Al2O3 as gate dielectric for Si and SiC MOSFETs" Lunch Break 6th Session ALD Reactors Ventzeslav Rangelow, ATV-Tech, Vaterstetten "Novel atomic layer deposition reactor for research and development" Johannes Lindner, Aixtron, Aachen "Design of ALD Reactors for the Semiconductor Industry" Discussions and Closing

5 Poster Contributions Author Baristiran Kaynak IHP-microelectronics, Frankfurt/Oder Title Analytical Aspects of Atomic Vapor Deposited High-k Dielectrics Christian Pfahler University Ulm Nano-hole filling with Iron oxide by ALD Nina Roth, Alexander Jakob, Uwe Siegert, Thomas Wächtler, Stefan E. Schulz, Thomas Gessner, Heinrich Lang Tu Chemnitz Cu(I)-, Ag(I)- and Ru(II)-Precursors for ALD and CVD M. Schaekers, K. Opsomer, D. Deduytsche 1, C. Detavernier 1, N. Blasco 2 and A. Zauner 2 IMEC, Belgium 1 Department of Solid State Sciences, Ghent University, Belgium 2 Air Liquide Research & Development, France Cedex ALD of ZrO 2, TiO 2 and ZrTiO 4 Thin Films from Novel Heteroleptic Precursors Daniel Kück University Ulm Atomic Layer Deposition of Aluminium Oxide onto Hydrogen-terminated Diamond Aleksandra Zydor Tyndall National Institute, Cork, Ireland An ab initio Evaluation of Cyclopentadienyl Precursors for the Atomic Layer Deposition of Hafnia and Zirconia Additional, not listed poster contributions will be presented as late contributions at the Workshop.