FJN3303 High Voltage Fast-Switching NPN Power Transistor
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1 FJN3303 High oltage Fast-Switching NPN Power Transistor High oltage Capability High Switching Speed Suitable for Electronic Ballast and Charger Absolute Maximum Ratings T C = 25 C unless otherwise noted TO-92. Emitter 2. Collector 3.Base Symbol Parameter alue Units CBO Collector-Base oltage 700 O Collector-Emitter oltage 400 EBO Emitter-Base oltage 9 Collector Current (DC).5 A P Collector Current (Pulse) * 3 A I B Base Current (DC) 0.75 A I BP Base Current (Pulse) *.5 A P C Collector Power Dissipation (T C = 25 C). W T J Junction Temperature 50 C T STG Storage Temperature -65 ~ 50 C May 2005 * Pulse Test: Pulse Width = 5ms, Duty Cycle 0% 2005 Fairchild Semiconductor Corporation
2 Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Conditions Min. Typ. Max Units B CBO Collector-Base Breakdown oltage = 500µA, I E = BO Collector-Emitter Breakdown oltage = 5mA, I B = B EBO Emitter-Base Breakdown oltage I E = 500µA, = 0 9 BO Collector Cut-off Current CB = 700, I E = 0 0 µa I EBO Emitter Cut-off Current EB = 9, = 0 0 µa h FE DC Current Gain = 2, = 0.5A h FE2 = 2, =.0A (sat) Collector-Emitter Saturation oltage = 0.5A, I B = 0.A =.0A, I B = 0.25A =.5A, I B = 0.5A BE(sat) Base-Emitter Saturation oltage = 0.5A, I B = 0.A =.0A, I B = 0.25A f T Current Gain Bandwidth Product = 0, = 0.A 4 MHz t ON Turn On Time CC = 25, = A. µs Storage Time I B = - I B2 = -0.2A R L = 25Ω 4.0 µs t F Fall Time 0.7 µs Thermal Characteristics T C = 25 C unless otherwise noted Symbol Parameter Rating Units R θjc Thermal Resistance Junction-Case 48 C/W R θja Thermal Resistance Junction-Ambient 25 C/W
3 Typical Performance Characteristics Figure. Static Characteristic Figure 3. Collector-Emitter Saturation oltage (sat) [], SATURATION OLTAGE = 4 I B I B = 20 ma I B = 40 ma I B = 20 ma [], COLLECTOR-EMITTER OLTAGE Ta = 25 o C Ta = 75 o C Ta = 25 o C Ta = - 25 o C h FE, DC CURRENT GAIN 00 0 Figure 2. DC Current Gain = 2 Ta = 25 o C Ta = - 25 o C Ta = 75 o C Ta = 25 o C E Figure 4. Base-Emitter Saturation oltage BE (sat) [], SATURATION OLTAGE 0 = 4 I B Ta = - 25 o C Ta = 25 o C Ta = 25 o C Ta = 75 o C Figure 5. Resistive Load Switching Time Figure 6. Resistive Load Switching Time 0 0 & t F [µs], SWITCHING TIME 0. I B = - I B2 = 0.2A CC = 25 t F & t F [µs], SWITCHING TIME 0. t F I B = 20mA, I B2 = - 40mA CC =
4 Typical Performance Characteristics (Continued) Figure 7. Forward Biased Safe Operating Area P C [W], COLLECTOR POWER DISSIPATION E (DC) T C = 25 o C Single Pulse [], COLLECTOR-EMITTER OLTAGE Figure 9. Power Derating Figure 8. Reverse Biased Safe Operating Area 0 I B = A, R B2 = 0 CC = 50, L = mh [], COLLECTOR-EMITTER OLTAGE T a [ o C], AMBIENT TEMPERATURE 4
5 Mechanical Dimensions 3.86MAX 0.46 ±0.0.27TYP [.27 ±0.20].02 ± ± TYP [.27 ±0.20] (R2.29) TO-92 (0.25) 4.47 ± ± Dimensions in Millimeters 5
6 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless CoolFET CROSSOLT DOME EcoSPARK E 2 CMOS EnSigna FACT FACT Quiet Series DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAST FASTr FPS FRFET GlobalOptoisolator GTO HiSeC I 2 C i-lo ImpliedDisconnect Across the board. Around the world. The Power Franchise Programmable Active Droop FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. IntelliMAX ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerEdge PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect µserdes SILENT SWITCHER SMART START SPM Stealth SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TINYOPTO TruTranslation UHC UltraFET UniFET CX 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5 6
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