Ab initio Berechungen für Datenbanken
|
|
- Christal Burns
- 6 years ago
- Views:
Transcription
1 J
2 Ab initio Berechungen für Datenbanken Jörg Neugebauer University of Paderborn Lehrstuhl Computational Materials Science Computational Materials Science Group CMS Group
3 Scaling Problem in Modeling length (m) dislocations interfaces point defects chemical bonds Phenomenological approaches: FEM materials properties Phase fields crystal growth : growth mechanism microstructure formation time (s)
4 Scaling Problem in Modeling length (m) dislocations interfaces point defects chemical bonds Free energy: growth mechanism microstructure formation 2 F = ε φ + f φ, T, cα, σ, V Phenomenological approaches: FEM materials properties Phase fields crystal growth : ( ) dv 1 empirical, fitted parameters/functions 10 3 time (s)
5 Atomistic picture: Ab initio Description r 1,e r 2,e Rr 1, Z 1 R r 2, Z 2 Hamiltonian: H = T el + T ion I r I, i R I Z r i i, j i j 1 r r i j i, j i j 1 r r R I R J e-ion e-e Ion-Ion Solve Schrödinger equation: HΨ = EΨ r r r ( ) Ultimate information: E Ψ R, KR, r, r, K,, 1 M 1 2 r N Advantage: Free of adjustable/empirical parameters (ab initio) r r
6 Scaling Problem in Modeling length (m) 1 Phenomenological approaches: FEM materials properties Phase fields crystal growth : 10 Density-Functional Al (111) -3 Theory: microstructure 2 h r 2 ext r H r xc r formation r r + v ( ;{ RI, Z I }) + v [ n( )] + v [ n( )] ϕ i ( ) = ε iϕi ( ) me dislocations interfaces growth material point defects mechanism universal 10-9 r functional DFT chemical bonds ({ R Z }) E, tot I I Energy barrier Phase II -3 Phase I 1 x int 10 3 time (s)
7 Scaling Problem in Modeling length (m) DFT dislocations interfaces point defects ~2050 ~2020 growth mechanism microstructure formation materials properties crystal growth time (s)
8 Scaling Problem in Modeling length (m) DFT dislocations interfaces point defects Phenomenological approaches: FEM materials properties Phase fields crystal growth : microstructure formation How to growth bridge mechanism length and time scales? time (s)
9 Ab initio based Multiscale Simulations Continuum models Thermodyn. Kinetics Strain Electr. struct. DFT: E tot ({R I }), ε i, φ i DFT code library: SFHIngX (
10 Potential Energy Surfaces Example: Crystal Structure of Aluminum reaction coordinates: angle length
11 Potential Energy Surfaces Example: Aluminum bcc fcc Energy [H] lattice constant [Bohr] Angle between lattice vectors
12 Potential Energy Surfaces Example: Aluminum Angle between lattice vectors fcc barrier bcc Angle between lattice vectors
13 Application: Phonon Dispersion Example: Aluminum
14 Ab initio based Multiscale Simulations Continuum models Thermodyn. Kinetics Strain Electr. struct. DFT: E tot ({R I }), ε i, φ i DFT code library: SFHIngX (
15 Method: Ab initio Thermodynamics Key: Calculate partition function DFT = r BO E RI Z( V, T) e r R { } I V ({ } ) V / k Experiment B T Z Phase ( V, T) = N deg e E tot r Phase { } vib R I V / kbt E { R } I e r { R } I V r Phase V / k B T F(V,T) = k B T ln G ( p, T ) = F V, T + n G(A ) µ A = n { Z(V,T) } ( ) pv T,p equil. config. D I, J E = tot u ({ r } ) Phase R I I u V vibronic config. J
16 Diluted Alloys Example: Mg in GaN Solubility/ Miscibility: Mg 3 N 2 Mg bulk µ Mg µ Ga Incorporation on other sites: Mg Ga Mg N Mg i
17 Intrinsic Solubility/Doping Efficiency Formation Energy (ev) Formation Energies: V N Mg Ga Fermi Energy (ev) Concentration (log 10 cm -3 ) Defect Concentrations: Mg Ga V N Temperature (K) Strong compensation at characteristic growth temperatures! very limited doping efficiency J. Neugebauer and C. Van de Walle, Appl. Phys. Lett. 68, 1829 (1996)
18 Co-Doping Example: Co-doping with hydrogen Formation Energy (ev) Formation Energies: V N H + Mg Ga Fermi Energy (ev) Concentration (log 10 cm -3 ) Defect Concentrations: 22 H free case 20 H-rich conditions Mg Ga H V N Temperature (K) Co-Doping: significantly increases dopant concentration significantly suppresses defect formation But: fully compensated material J. Neugebauer and C. Van de Walle, Appl. Phys. Lett. 68, 1829 (1996)
19
20
21
22
23
24
25
26
27
28
29 Example: Dislocations
30 Example: Dislocations continuum elastic theory emp. pot. DFT Main Main challenge: How How to to connect zones zones at at boundaries? New New approach: Projection method without explicit boundaries!
31 Comparison with Experiment Theory Experiment L. Lymperakis, J. Neugebauer, M. Albrecht, H. Strunk, PRL in print. EC-TMR Project: IPAM
32
33
34 J
Why thermodynamics for materials?
Why thermodynamics for materials? Example p 2mkT T For = 300 K, = 1 atm ~ 10 8 site -1 s -1 p p Requires 10-12 atm to keep a clean surface clean; surface can also lose atoms Example Thermodynamic potentials
More informationSMARTMET project: Towards breaking the inverse ductility-strength relation
SMARTMET project: Towards breaking the inverse ductility-strength relation B. Grabowski, C. Tasan SMARTMET ERC advanced grant 3.8 Mio Euro for 5 years (Raabe/Neugebauer) Adaptive Structural Materials group
More informationEFFECTS OF STOICHIOMETRY ON POINT DEFECTS AND IMPURITIES IN GALLIUM NITRIDE
EFFECTS OF STOICHIOMETRY ON POINT DEFECTS AND IMPURITIES IN GALLIUM NITRIDE C. G. VAN DE WALLE AND J. E. NORTHRUP Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 930, USA E-mail: vandewalle@parc.com
More informationDefects and diffusion in metal oxides: Challenges for first-principles modelling
Defects and diffusion in metal oxides: Challenges for first-principles modelling Karsten Albe, FG Materialmodellierung, TU Darmstadt Johan Pohl, Peter Agoston, Paul Erhart, Manuel Diehm FUNDING: ICTP Workshop
More informationBulk Structures of Crystals
Bulk Structures of Crystals 7 crystal systems can be further subdivided into 32 crystal classes... see Simon Garrett, "Introduction to Surface Analysis CEM924": http://www.cem.msu.edu/~cem924sg/lecturenotes.html
More informationRustam Z. Khaliullin University of Zürich
Rustam Z. Khaliullin University of Zürich Molecular dynamics (MD) MD is a computational method for simulating time evolution of a collection of interacting atoms by numerically integrating Newton s equation
More informationDFT modeling of novel materials for hydrogen storage
DFT modeling of novel materials for hydrogen storage Tejs Vegge 1, J Voss 1,2, Q Shi 1, HS Jacobsen 1, JS Hummelshøj 1,2, AS Pedersen 1, JK Nørskov 2 1 Materials Research Department, Risø National Laboratory,
More informationDensity Functional Modeling of Nanocrystalline Materials
Density Functional Modeling of Nanocrystalline Materials A new approach for modeling atomic scale properties in materials Peter Stefanovic Supervisor: Nikolas Provatas 70 / Part 1-7 February 007 Density
More informationFree energy sampling for electrochemical systems
Free energy sampling for electrochemical systems Mira Todorova, Anoop Kishore Vatti, Suhyun Yoo and Jörg Neugebauer Department of Computational Materials Design Düsseldorf, Germany m.todorova@mpie.de IPAM,
More informationDislocations in graphene
Dislocations in graphene M. Ortiz California Institute of Technology In collaboration with: M.P. Ariza, Universidad de Sevilla Symposium on Multiscale Dislocation Dynamics UCSD, La Jolla, January 16-17,
More informationBand calculations: Theory and Applications
Band calculations: Theory and Applications Lecture 2: Different approximations for the exchange-correlation correlation functional in DFT Local density approximation () Generalized gradient approximation
More informationTeoría del Funcional de la Densidad (Density Functional Theory)
Teoría del Funcional de la Densidad (Density Functional Theory) Motivation: limitations of the standard approach based on the wave function. The electronic density n(r) as the key variable: Functionals
More informationBasic cell design. Si cell
Basic cell design Si cell 1 Concepts needed to describe photovoltaic device 1. energy bands in semiconductors: from bonds to bands 2. free carriers: holes and electrons, doping 3. electron and hole current:
More informationThree Most Important Topics (MIT) Today
Three Most Important Topics (MIT) Today Electrons in periodic potential Energy gap nearly free electron Bloch Theorem Energy gap tight binding Chapter 1 1 Electrons in Periodic Potential We now know the
More informationElectrochemistry project, Chemistry Department, November Ab-initio Molecular Dynamics Simulation
Electrochemistry project, Chemistry Department, November 2006 Ab-initio Molecular Dynamics Simulation Outline Introduction Ab-initio concepts Total energy concepts Adsorption energy calculation Project
More informationIgor A. Abrikosov Department of Physics, Chemistry, and Biology (IFM), Linköping University, Sweden
Correlation between electronic structure, magnetism and physical properties of Fe-Cr alloys: ab initio modeling Igor A. Abrikosov Department of Physics, Chemistry, and Biology (IFM), Linköping University,
More informationMulti-Scale Modeling from First Principles
m mm Multi-Scale Modeling from First Principles μm nm m mm μm nm space space Predictive modeling and simulations must address all time and Continuum Equations, densityfunctional space scales Rate Equations
More informationAn EAM potential for the dynamical simulation of Ni-Al alloys
J. At. Mol. Sci. doi: 10.4208/jams.022310.031210a Vol. 1, No. 3, pp. 253-261 August 2010 An EAM potential for the dynamical simulation of Ni-Al alloys Jian-Hua Zhang, Shun-Qing Wu, Yu-Hua Wen, and Zi-Zhong
More informationKinetic lattice Monte Carlo simulations of diffusion processes in Si and SiGe alloys
Kinetic lattice Monte Carlo simulations of diffusion processes in Si and SiGe alloys, Scott Dunham Department of Electrical Engineering Multiscale Modeling Hierarchy Configuration energies and transition
More informationElectronic Structure Theory for Periodic Systems: The Concepts. Christian Ratsch
Electronic Structure Theory for Periodic Systems: The Concepts Christian Ratsch Institute for Pure and Applied Mathematics and Department of Mathematics, UCLA Motivation There are 10 20 atoms in 1 mm 3
More informationSupplementary Information
Supplementary Information Supplementary Figure 1: Electronic Kohn-Sham potential profile of a charged monolayer MoTe 2 calculated using PBE-DFT. Plotted is the averaged electronic Kohn- Sham potential
More informationFrom Atoms to Materials: Predictive Theory and Simulations
From Atoms to Materials: Predictive Theory and Simulations Week 3 Lecture 4 Potentials for metals and semiconductors Ale Strachan strachan@purdue.edu School of Materials Engineering & Birck anotechnology
More informationPrerequisites for reliable modeling with first-principles methods. P. Kratzer Fritz-Haber-Institut der MPG D Berlin-Dahlem, Germany
Prerequisites for reliable modeling with first-principles methods P. Kratzer Fritz-Haber-Institut der MPG D-14195 Berlin-Dahlem, Germany Prerequisites for modeling (I) Issues to consider when applying
More information6. Computational Design of Energy-related Materials
6. Computational Design of Energy-related Materials Contents 6.1 Atomistic Simulation Methods for Energy Materials 6.2 ab initio design of photovoltaic materials 6.3 Solid Ion Conductors for Fuel Cells
More informationNew Material Design and Device Simulation Tool. Dr. Gong Kui HZWTECH
New Material Design and Device Simulation Tool Dr. Gong Kui HZWTECH 鸿之微科技 ( 上海 ) 股份有限公司 HONGZHIWEI TECHNOLOGY(SHANGHAI) CO.,LTD outline Atomistic-TCAD:new devices simulation tool Applications of Atomistic-TCAD
More informationFirst-principles based design of Pt- and Pd-based catalysts for benzene hydrogenation
1 1 First-principles based design of Pt- and Pd-based catalysts for benzene hydrogenation Maarten K. Sabbe, Gonzalo Canduela, Marie- Françoise Reyniers, Guy B. Marin Introduction: benzene hydrogenation
More informationFirst principle calculations of plutonium and plutonium compounds: part 1
First principle calculations of plutonium and plutonium compounds: part 1 A. B. Shick Institute of Physics ASCR, Prague, CZ Outline: u Lecture 1: Methods of Correlated band theory DFT and DFT+U u Lecture
More informationOutline. Introduction: graphene. Adsorption on graphene: - Chemisorption - Physisorption. Summary
Outline Introduction: graphene Adsorption on graphene: - Chemisorption - Physisorption Summary 1 Electronic band structure: Electronic properties K Γ M v F = 10 6 ms -1 = c/300 massless Dirac particles!
More informationFYS Vår 2014 (Kondenserte fasers fysikk)
FYS3410 - Vår 014 (Kondenserte fasers fysikk) http://www.uio.no/studier/emner/matnat/fys/fys3410/v14/index.html Pensum: Solid State Physics by Philip Hofmann (Chapters 1-7 and 11) Andrej Kuznetsov delivery
More informationPREDICTION OF THERMODYNAMIC STABILITY OF METAL/OXIDE INTERFACE
PREDICTION OF THERMODYNAMIC STABILITY OF METAL/OXIDE INTERFACE 14 Sept 010 Hong Mei Jin Ping Wu wuping@ihpc.a-star.edu.sg Institute of High Performance Computing Singapore Computational Materials Science
More informationDensity-functional theory of superconductivity
Density-functional theory of superconductivity E. K. U. Gross MPI for Microstructure Physics Halle http://users.physi.fu-berlin.de/~ag-gross CO-WORKERS: HALLE A. Sanna C. Bersier A. Linscheid H. Glawe
More informationThe electronic structure of materials 1
Quantum mechanics 2 - Lecture 9 December 18, 2013 1 An overview 2 Literature Contents 1 An overview 2 Literature Electronic ground state Ground state cohesive energy equilibrium crystal structure phase
More informationFirst-principles studies of beryllium doping of GaN
PHYSICAL REVIEW B, VOLUME 63, 24525 First-principles studies of beryllium doping of GaN Chris G. Van de Walle * and Sukit Limpijumnong Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto,
More informationMECHANICS OF CARBON NANOTUBE BASED COMPOSITES WITH MOLECULAR DYNAMICS AND MORI TANAKA METHODS. Vinu Unnithan and J. N. Reddy
MECHANICS OF CARBON NANOTUBE BASED COMPOSITES WITH MOLECULAR DYNAMICS AND MORI TANAKA METHODS Vinu Unnithan and J. N. Reddy US-South American Workshop: Mechanics and Advanced Materials Research and Education
More informationELECTRONIC STRUCTURE OF MAGNESIUM OXIDE
Int. J. Chem. Sci.: 8(3), 2010, 1749-1756 ELECTRONIC STRUCTURE OF MAGNESIUM OXIDE P. N. PIYUSH and KANCHAN LATA * Department of Chemistry, B. N. M. V. College, Sahugarh, MADHIPUR (Bihar) INDIA ABSTRACT
More informationDamping of magnetization dynamics
Damping of magnetization dynamics Andrei Kirilyuk! Radboud University, Institute for Molecules and Materials, Nijmegen, The Netherlands 1 2 Landau-Lifshitz equation N Heff energy gain:! torque equation:
More informationChemical reactions as network of rare events: Kinetic MonteCarlo
Chemical reactions as network of rare events: Kinetic MonteCarlo Extending the scale Length (m) 1 10 3 Potential Energy Surface: {Ri} 10 6 (3N+1) dimensional 10 9 E Thermodynamics: p, T, V, N continuum
More informationab initio Lattice Vibrations: Calculating the Thermal Expansion Coeffcient Felix Hanke & Martin Fuchs June 30, 2009 This afternoon s plan
ab initio Lattice Vibrations: Calculating the Thermal Expansion Coeffcient Felix Hanke & Martin Fuchs June 3, 29 This afternoon s plan introductory talk Phonons: harmonic vibrations for solids Phonons:
More informationLecture 4: Band theory
Lecture 4: Band theory Very short introduction to modern computational solid state chemistry Band theory of solids Molecules vs. solids Band structures Analysis of chemical bonding in Reciprocal space
More informationIntegrated Computational Materials Engineering Education
Integrated Computational Materials Engineering Education Lecture on Density Functional Theory An Introduction Mark Asta Dept. of Materials Science and Engineering, University of California, Berkeley &
More informationQUANTUM WELLS, WIRES AND DOTS
QUANTUM WELLS, WIRES AND DOTS Theoretical and Computational Physics of Semiconductor Nanostructures Second Edition Paul Harrison The University of Leeds, UK /Cf}\WILEY~ ^INTERSCIENCE JOHN WILEY & SONS,
More informationSearch for materials to harvest light
Solar nanocomposites with complementary charge extraction pathways for electrons and holes: Si embedded in ZnS S. Wippermann, M. Vörös, F. Gygi, A. Gali, G. Zimanyi, G. Galli NanoMatFutur DPG-2014, 04/03/2014
More informationElectronic-structure calculations at macroscopic scales
Electronic-structure calculations at macroscopic scales M. Ortiz California Institute of Technology In collaboration with: K. Bhattacharya, V. Gavini (Caltech), J. Knap (LLNL) BAMC, Bristol, March, 2007
More informationMinimal Update of Solid State Physics
Minimal Update of Solid State Physics It is expected that participants are acquainted with basics of solid state physics. Therefore here we will refresh only those aspects, which are absolutely necessary
More informationTime-dependent density functional theory
Time-dependent density functional theory E.K.U. Gross Max-Planck Institute for Microstructure Physics OUTLINE LECTURE I Phenomena to be described by TDDFT Some generalities on functional theories LECTURE
More informationPHYS208 P-N Junction. Olav Torheim. May 30, 2007
1 PHYS208 P-N Junction Olav Torheim May 30, 2007 1 Intrinsic semiconductors The lower end of the conduction band is a parabola, just like in the quadratic free electron case (E = h2 k 2 2m ). The density
More informationMat E 272 Lecture 25: Electrical properties of materials
Mat E 272 Lecture 25: Electrical properties of materials December 6, 2001 Introduction: Calcium and copper are both metals; Ca has a valence of +2 (2 electrons per atom) while Cu has a valence of +1 (1
More informationPhonon wavefunctions and electron phonon interactions in semiconductors
Phonon wavefunctions and electron phonon interactions in semiconductors Bartomeu Monserrat bm418@cam.ac.uk University of Cambridge Quantum Monte Carlo in the Apuan Alps VII QMC in the Apuan Alps VII Bartomeu
More informationAn Atomistic-based Cohesive Zone Model for Quasi-continua
An Atomistic-based Cohesive Zone Model for Quasi-continua By Xiaowei Zeng and Shaofan Li Department of Civil and Environmental Engineering, University of California, Berkeley, CA94720, USA Extended Abstract
More informationModeling Transport in Heusler-based Spin Devices
Modeling Transport in Heusler-based Spin Devices Gautam Shine (Stanford) S. Manipatruni, A. Chaudhry, D. E. Nikonov, I. A. Young (Intel) Electronic Structure Extended Hückel theory Application to Heusler
More informationExtrinsic Point Defects: Impurities
Extrinsic Point Defects: Impurities Substitutional and interstitial impurities Sol solutions, solubility limit Entropy of ing, eal solution model Enthalpy of ing, quasi-chemical model Ideal and regular
More informationPHYSICS OF SEMICONDUCTORS AND THEIR HETEROSTRUCTURES
PHYSICS OF SEMICONDUCTORS AND THEIR HETEROSTRUCTURES Jasprit Singh University of Michigan McGraw-Hill, Inc. New York St. Louis San Francisco Auckland Bogota Caracas Lisbon London Madrid Mexico Milan Montreal
More informationThermoelectrics: A theoretical approach to the search for better materials
Thermoelectrics: A theoretical approach to the search for better materials Jorge O. Sofo Department of Physics, Department of Materials Science and Engineering, and Materials Research Institute Penn State
More informationElectronic State Calculation for Hydrogen Atom under Inhomogeneous Field
26 Special Issue Multiscale Simulations for Materials Research Report Electronic State Calculation for Hydrogen Atom under Inhomogeneous Field Shunsuke Yamakawa and Shi-aki Hyodo We discuss herein the
More informationSingle Crystal Gradient Plasticity Part I
Chair for Continuum Mechanics Institute of Engineering Mechanics (Prof. Böhlke) Department of Mechanical Engineering S. Wulfinghoff, T. Böhlke, E. Bayerschen Single Crystal Gradient Plasticity Part I Chair
More informationFirst-principles modeling: The evolution of the field from Walter Kohn s seminal work to today s computer-aided materials design
First-principles modeling: The evolution of the field from Walter Kohn s seminal work to today s computer-aided materials design Peter Kratzer 5/2/2018 Peter Kratzer Abeokuta School 5/2/2018 1 / 34 Outline
More informationSupporting Online Material (1)
Supporting Online Material The density functional theory (DFT) calculations were carried out using the dacapo code (http://www.fysik.dtu.dk/campos), and the RPBE (1) generalized gradient correction (GGA)
More informationSupporting Information
Supporting Information Conversion of multilayer graphene into continuous ultrathin sp 3 - bonded carbon films on metal surfaces Dorj Odkhuu 1, Dongbin Shin 2, Rodney S. Ruoff 3, and Noejung Park 1,2 1
More informationIAP 2006: From nano to macro: Introduction to atomistic modeling techniques and application in a case study of modeling fracture of copper (1.
IAP 2006: From nano to macro: Introduction to atomistic modeling techniques and application in a case study of modeling fracture of copper (1.978 PDF) http://web.mit.edu/mbuehler/www/teaching/iap2006/intro.htm
More informationSoutheast University, Nanjing, China 2 Department of Applied Physics, Aalto University,
Supplementary Information to Solubility of Boron, Carbon and Nitrogen in Transition Metals: Getting Insight into Trends from First-Principles Calculations Xiaohui Hu, 1,2 Torbjörn Björkman 2,3, Harri Lipsanen
More informationIntroduction to Computational Materials Science
Introduction to Computational Materials Science Fundamentals to Applications RICHARD LESAR lowa State University.CAMBRIDGE ::: UNIVERSITY PRESS CONTENTS Preface 1 Introduction to materials modeling and
More informationComplementary approaches to high T- high p crystal structure stability and melting!
Complementary approaches to high T- high p crystal structure stability and melting! Dario ALFÈ Department of Earth Sciences & Department of Physics and Astronomy, Thomas Young Centre@UCL & London Centre
More informationLecture 10. Transition probabilities and photoelectric cross sections
Lecture 10 Transition probabilities and photoelectric cross sections TRANSITION PROBABILITIES AND PHOTOELECTRIC CROSS SECTIONS Cross section = σ = Transition probability per unit time of exciting a single
More informationThe Projector Augmented Wave method
The Projector Augmented Wave method Advantages of PAW. The theory. Approximations. Convergence. 1 The PAW method is... What is PAW? A technique for doing DFT calculations efficiently and accurately. An
More informationIntroduction to Density Functional Theory with Applications to Graphene Branislav K. Nikolić
Introduction to Density Functional Theory with Applications to Graphene Branislav K. Nikolić Department of Physics and Astronomy, University of Delaware, Newark, DE 19716, U.S.A. http://wiki.physics.udel.edu/phys824
More informationBranislav K. Nikolić
First-principles quantum transport modeling of thermoelectricity in nanowires and single-molecule nanojunctions Branislav K. Nikolić Department of Physics and Astronomy, University of Delaware, Newark,
More informationFYS Vår 2017 (Kondenserte fasers fysikk)
FYS3410 - Vår 2017 (Kondenserte fasers fysikk) http://www.uio.no/studier/emner/matnat/fys/fys3410/v16/index.html Pensum: Introduction to Solid State Physics by Charles Kittel (Chapters 1-9, 11, 17, 18,
More informationStructure of Cement Phases from ab initio Modeling Crystalline C-S-HC
Structure of Cement Phases from ab initio Modeling Crystalline C-S-HC Sergey V. Churakov sergey.churakov@psi.ch Paul Scherrer Institute Switzerland Cement Phase Composition C-S-H H Solid Solution Model
More informationSCIENCE CHINA Physics, Mechanics & Astronomy
SCIENCE CHINA Physics, Mechanics & Astronomy Article April 2012 Vol.55 No.4: 614 618 doi: 10.1007/s11433-012-4679-8 Stability and diffusion properties of self-interstitial atoms in tungsten: a first-principles
More informationIntroduction to materials modeling and simulation
1 Introduction to materials modeling and simulation With the development of inexpensive, yet very fast, computers and the availability of software for many applications, computational modeling and simulation
More informationEnergy Spectroscopy. Ex.: Fe/MgO
Energy Spectroscopy Spectroscopy gives access to the electronic properties (and thus chemistry, magnetism,..) of the investigated system with thickness dependence Ex.: Fe/MgO Fe O Mg Control of the oxidation
More informationThe Semiconductor in Equilibrium
Lecture 6 Semiconductor physics IV The Semiconductor in Equilibrium Equilibrium, or thermal equilibrium No external forces such as voltages, electric fields. Magnetic fields, or temperature gradients are
More informationLecture 2. Unit Cells and Miller Indexes. Reading: (Cont d) Anderson 2 1.8,
Lecture 2 Unit Cells and Miller Indexes Reading: (Cont d) Anderson 2 1.8, 2.1-2.7 Unit Cell Concept The crystal lattice consists of a periodic array of atoms. Unit Cell Concept A building block that can
More informationNovel High-Efficiency Crystalline-Si-Based Compound. Heterojunction Solar Cells: HCT (Heterojunction with Compound. Thin-layer)
Electronic Supplementary Material (ESI) for Physical Chemistry Chemical Physics. This journal is the Owner Societies 2014 Supplementary Information for Novel High-Efficiency Crystalline-Si-Based Compound
More informationSome Review & Introduction to Solar PV
1.021, 3.021, 10.333, 22.00 : Introduction to Modeling and Simulation : Spring 2012 Part II Quantum Mechanical Methods : Lecture 9 Some Review & Introduction to Solar PV Jeffrey C. Grossman Department
More informationComputing phase diagrams of model liquids & self-assembly of (bio)membranes
Computing phase diagrams of model liquids & self-assembly of (bio)membranes Ulf Rørbæk Pedersen (ulf@urp.dk) Crystal structure of a simplistic model of a molecule. What is the melting temperature? A typical
More informationDefects. Defects. Kap. 3 States of aggregation. Perfect Crystal
Kap. 3 States of aggregation Defects Perfect Crystal A A perfect crystal with every atom in the correct position does not exist. Only a hypothetical situation at 0 K Crystals are like people: it is the
More informationAnharmonic energy in periodic systems
Anharmonic energy in periodic systems Bartomeu Monserrat University of Cambridge Electronic Structure Discussion Group 13 March 213 Vibrational properties overview Harmonic phonons are a very good approximation.
More informationIntroduction to Engineering Materials ENGR2000. Dr.Coates
Introduction to Engineering Materials ENGR2000 Chapter 18: Electrical Properties Dr.Coates 18.2 Ohm s Law V = IR where R is the resistance of the material, V is the voltage and I is the current. l R A
More informationFundamentals and applications of Density Functional Theory Astrid Marthinsen PhD candidate, Department of Materials Science and Engineering
Fundamentals and applications of Density Functional Theory Astrid Marthinsen PhD candidate, Department of Materials Science and Engineering Outline PART 1: Fundamentals of Density functional theory (DFT)
More informationMaterials and Devices in Electrical Engineering
Examination WS 02/03 Materials and Devices in Electrical Engineering Monday 17 th of March, 9:00 11:00, International Department, SR. 203 Notice 1. It is allowed to use any kind of aids (books, scripts,
More informationFirst-principles study of the formation and migration of native defects in NaAlH 4
First-principles study of the formation and migration of native defects in NaAlH 4 Gareth B. Wilson-Short, Anderson Janotti, Khang Hoang, Amra Peles,* and Chris G. Van de Walle Materials Department, University
More informationCh. 2: Energy Bands And Charge Carriers In Semiconductors
Ch. 2: Energy Bands And Charge Carriers In Semiconductors Discrete energy levels arise from balance of attraction force between electrons and nucleus and repulsion force between electrons each electron
More informationAssessment of Phase-Field-Crystal Concepts using Long-Time Molecular Dynamics
This is a post-print of the following article: Baker, K.. & Curtin, W. A. Assessment of phase-field-crystal concepts using long-time molecular Assessment of Phase-Field-Crystal Concepts using ong-time
More informationPseudopotentials for hybrid density functionals and SCAN
Pseudopotentials for hybrid density functionals and SCAN Jing Yang, Liang Z. Tan, Julian Gebhardt, and Andrew M. Rappe Department of Chemistry University of Pennsylvania Why do we need pseudopotentials?
More informationIgor A. Abrikosov Theoretical Physics, Department of Physics, Chemistry and Biology, Linköping University, Sweden
Ab initio simulations of materials properties: from fundamental theory towards materials design Igor A. Abrikosov (igor.abrikosov@ifm.liu.se) Theoretical Physics Department of Physics Chemistry and Biology
More informationThe Theoretical Toolbox to Describe the Electronic Structure of Surfaces
The Theoretical Toolbox to Describe the Electronic Structure of Surfaces Patrick Rinke Fritz-Haber-Institut der Max-Planck-Gesellschaft Faradayweg 4-6, D-14195 Berlin rinke@fhi-berlin.mpg.de Acknowledgements:
More informationSemi-insulating SiC substrates for high frequency devices
Klausurtagung Silberbach, 19. - 21. Feb. 2002 Institut für Werkstoffwissenschaften - WW 6 Semi-insulating SiC substrates for high frequency devices Vortrag von Matthias Bickermann Semi-insulating SiC substrates
More informationDefects in Crystalline Solids: the Basics
Arkady Krasheninnikov HZDR, Germany and Aalto University, Finland slide 1 Jul 09, 2017 Defects in Crystalline Solids: the Basics Arkady Krasheninnikov http://users.aalto.fi/~ark/ Ion Beam Centre, Helmholtz-Zentrum
More informationAb Initio Atomistic Thermodynamics
Ab Initio Atomistic Thermodynamics (Elizabeth C. Beret) Luca M. Ghiringhelli Fritz-Haber-Institut Berlin Extending the scale Thermodynamics: p, T, V, N Length (m) continuum 0 e or m -3 Potential Energy
More informationLecture 10. Transition probabilities and photoelectric cross sections
Lecture 10 Transition probabilities and photoelectric cross sections TRANSITION PROBABILITIES AND PHOTOELECTRIC CROSS SECTIONS Cross section = = Transition probability per unit time of exciting a single
More informationSolutions for Homework 4
Solutions for Homework 4 October 6, 2006 1 Kittel 3.8 - Young s modulus and Poison ratio As shown in the figure stretching a cubic crystal in the x direction with a stress Xx causes a strain e xx = δl/l
More informationECE 442. Spring, Lecture -2
ECE 442 Power Semiconductor Devices and Integrated circuits Spring, 2006 University of Illinois at Chicago Lecture -2 Semiconductor physics band structures and charge carriers 1. What are the types of
More informationCrystal Properties. MS415 Lec. 2. High performance, high current. ZnO. GaN
Crystal Properties Crystal Lattices: Periodic arrangement of atoms Repeated unit cells (solid-state) Stuffing atoms into unit cells Determine mechanical & electrical properties High performance, high current
More informationSpin electronics at the nanoscale. Michel Viret Service de Physique de l Etat Condensé CEA Saclay France
Spin electronics at the nanoscale Michel Viret Service de Physique de l Etat Condensé CEA Saclay France Principles of spin electronics: ferromagnetic metals spin accumulation Resistivity of homogeneous
More informationMotivation. Confined acoustics phonons. Modification of phonon lifetimes Antisymmetric Bulk. Symmetric. 10 nm
Motivation Confined acoustics phonons Modification of phonon lifetimes 0 0 Symmetric Antisymmetric Bulk 0 nm A. Balandin et al, PRB 58(998) 544 Effect of native oxide on dispersion relation Heat transport
More informationMorphological evolution of single-crystal ultrathin solid films
Western Kentucky University From the SelectedWorks of Mikhail Khenner March 29, 2010 Morphological evolution of single-crystal ultrathin solid films Mikhail Khenner, Western Kentucky University Available
More informationStatistical Mechanics
Statistical Mechanics Newton's laws in principle tell us how anything works But in a system with many particles, the actual computations can become complicated. We will therefore be happy to get some 'average'
More informationDirect and Indirect Semiconductor
Direct and Indirect Semiconductor Allowed values of energy can be plotted vs. the propagation constant, k. Since the periodicity of most lattices is different in various direction, the E-k diagram must
More informationA kinetic study of the ordering process in ternary III V semiconductor alloys
J. Phys.: Condens. Matter 9 (1997) 5737 5749. Printed in the UK PII: S0953-8984(97)78738-1 A kinetic study of the ordering process in ternary III V semiconductor alloys Zhi-Feng Huang and Bing-Lin Gu CCAST
More information