Semi-insulating SiC substrates for high frequency devices

Size: px
Start display at page:

Download "Semi-insulating SiC substrates for high frequency devices"

Transcription

1 Klausurtagung Silberbach, Feb Institut für Werkstoffwissenschaften - WW 6 Semi-insulating SiC substrates for high frequency devices Vortrag von Matthias Bickermann

2 Semi-insulating SiC substrates for high frequency devices what s this? Semi-insulating......Silicon Carbide......SiC substrates......high frequency devices...?

3 First, explain what means semi-insulating... Semi-insulating......Silicon Carbide......SiC substrates......high frequency devices...?

4 The basics: semi-insulating Deep electronic levels E >> kt: Almost no thermal activation at room temperature Fermi level is pinned at the deep level Temperature dependence of the charge carrier concentration is the same as in an intrinsic semiconductor! E N A? shallow acceptor» N D E A E F LEITUNGSBAND? deep (midgap) acceptor E A E F E E F C VALENZBAND? intrinsic semiconductor E F E G /2 E E F C shallow acceptor E-E F 2kT V p ~ exp( ) deep acceptor E-E F kt V p ~ exp( ) intrinsic semiconductor E-E C V E-E F 2kT kt V p ~ exp( ) exp( ) p 10 5 cm 293K

5 What is silicon carbide used for? Semi-insulating......Silicon Carbide......SiC substrates......high frequency devices...?

6 The basics: silicon carbide Electronic properties of SiC maximum work temperature C (Si: 300 C) electrical breakdown field...2,5 MV/cm (Si: 0,3 MV/cm) 7 7 saturation drift velocity... 2,5 10 cm²/vs (Si: 1 10 cm²/vs) thermal conductance... 5W/mK (Si: 1,5 W/mK) dielectric constant ,7 (Si: 11,8) power1 MW kW 100 Thyristor GTO GTO IGBT Si IGBT SiC MOSFET MOSFET GaAs SiGe MESFET GaN SiC MESFET HBT 10 Hz khz MHz GHz frequency

7 Yes, silicon carbide devices are superior, but why substrates are needed? Semi-insulating......Silicon Carbide......SiC substrates......high frequency devices...?

8 The Basics: SiC substrates for GaN and SiC devices...for SiC devices high-power high-frequency low harmonic noise (CE-Normative) Infineon SiC-Schottky-Doide Frauenhofer-Insitut LUCOLED for GaN devices low lattice mismatch similar thermal expansion coeff. blue LEDs / Laser white LED / LUCOLED

9 Tell me more about high-frequency devices, how do they work? Semi-insulating......Silicon Carbide......SiC substrates......high frequency devices...?

10 SiC high-frequency device: introducing the MESFET

11 High-frequency MESFET device: Transit time: = L²/µVD SiC high-frequency device: MESFET operation limits RC time constant: = R C 1/(neµ) 0 A/L High µ: low channel n-type doping - series resistance at source and drain - miller capacitance at gate - parasitic capacitance at substrate interface - heat dissipation Channel needs to be defined: p or semi-insulating substrate?

12 SiC high-frequency device: p-type vs. semi-insulating substrate p-type vs. semi-insulating substrate: - device / connection isolation - heat dissipation cooling from the backside needs grounded metallization - series resistance can be lowered also by backside grounded metallization - pn junction at the channel-substrate interface is influenced by the electric field at the gate - parasitic capacitance at substrate interface can lead to space charge at channel-substrate interface drain current collapse

13 Now on to some practical work! How to prepare semi-insulating SiC substrates...

14 Growth of semi-insulating SiC: search for deep levels E N Ti N P Ta CONDUCTION BAND O W O V Zn V Be D Al B Ga Mg Sc Cr Z/Z 1 2 UD-1 v Si 0 i-band acceptors donors intrinsic defects VALENCE BAND Known defect levels in SiC: Only the vanadium donator level lies midgap Acceptors: Wolfram, Zinc, Vanadium, D-Center In bulk SiC growth only V doping was published so far 0 Intrinsic defects: UD-1 und v are also of interest! Si

15 Growth of semi-insulating SiC: vanadium deep levels Semi-insulating SiC by vanadium doping: 0,10 ev Leitungsband N --/0 (Donator) 0,6...0,8 ev SiC is generally n-type ( N): Al or B doping to get p-type E? V 4+/3+ (Akzeptor) V 3+/4+ acceptor level: deep level, as E 800 mev (just like Fe in InP and EL2 in GaAs) 1eV 1,55 ev 0,32 ev 0,25 ev V Valenzband B 5+/4+ 0/+ (Donator) (Akzeptor) V 4+/5+ donor level: deep midgap level ( E 1450 mev, 10 cm) 15 6H Al 0/+ (Akzeptor)

16 Growth of semi-insulating SiC: implant or grow? SiC+VC Kimoto, Appl. Phys. Lett. 69 (1996) 1113 Barrett, US Patent 5,611,955 (1997) Only by growth semi-insulating substrates are obtained!

17 Growth of semi-insulating SiC: problems in V doped growth Problems in bulk growth of semi-insulating V-doped SiC: Inhomogeneous incorporation of vanadium during growth 17 3 Low solubility limit: 5 10 cm Formation of precipitates Impurities (mainly nitrogen) are present in the 10 to 10 cm range and decrease during growth time: low yield changes in electrical behavior p-type co-doping required growth direction

18 Growth of semi-insulating SiC: electrical properties of SiC:V samples V donor level activation energy Jenny, J. Appl. Phys. 78 (1995) 3839 Wafer homogeneity on specific resistivity with activated V acceptor SiC:V electrical properties: Results are encouraging!

19 Growth of semi-insulating SiC: high-purity semi-insulating SiC High-purity semi-insulating SiC (HPSI-SiC): Reduction of impurity levels to beyond 10 Electrical behavior gouverned by intrinsic defects 0 UD-1 and v Si (how are they generated?) 15 3 cm Carter, US Patent 6,218,680 B1 (2001) The neutral silicon vacancy anneals partially out at 1600 C Ellison, MRS Symp. Proc. 640 (2001) H1 2

20 Growth of semi-insulating SiC: HPSI vs. V-doped SiC in MESFET behavior HPSI vs. V-doped SiC: Lower impurity and defect concentration: Capacitance losses reduced Carrier trapping at substrate/channel interface suppressed HPSI-SiC shows superior behavior over V-doed SiC!

21 Semi-insulating SiC substrates for high frequency devices Résumé SiC substrates are needed for SiC and GaN high-power and high-frequency devices. Semi-insulating substrates lead to better performance of these devices (as it was demonstrated on the MESFET structure) A semiconductor becomes semi-insulating as a deep (midgap) level dominates electrical behavior For SiC, this has been demonstrated for vanadium doping and for high-purity growth utilizing the formation of intrinsic defects like UD-1 or v Si 0 Results show that HPSI-SiC leads to superior device performance

Review of Semiconductor Fundamentals

Review of Semiconductor Fundamentals ECE 541/ME 541 Microelectronic Fabrication Techniques Review of Semiconductor Fundamentals Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Page 1 Semiconductor A semiconductor is an almost insulating material,

More information

A semiconductor is an almost insulating material, in which by contamination (doping) positive or negative charge carriers can be introduced.

A semiconductor is an almost insulating material, in which by contamination (doping) positive or negative charge carriers can be introduced. Semiconductor A semiconductor is an almost insulating material, in which by contamination (doping) positive or negative charge carriers can be introduced. Page 2 Semiconductor materials Page 3 Energy levels

More information

Lecture 7: Extrinsic semiconductors - Fermi level

Lecture 7: Extrinsic semiconductors - Fermi level Lecture 7: Extrinsic semiconductors - Fermi level Contents 1 Dopant materials 1 2 E F in extrinsic semiconductors 5 3 Temperature dependence of carrier concentration 6 3.1 Low temperature regime (T < T

More information

Effects of Antimony Near SiO 2 /SiC Interfaces

Effects of Antimony Near SiO 2 /SiC Interfaces Effects of Antimony Near SiO 2 /SiC Interfaces P.M. Mooney, A.F. Basile, and Zenan Jiang Simon Fraser University, Burnaby, BC, V5A1S6, Canada and Yongju Zheng, Tamara Isaacs-Smith Smith, Aaron Modic, and

More information

HIGH TEMPERATURE RESISTANT MATERIALS HIGH-TEMPERATURE ELECTRONIC

HIGH TEMPERATURE RESISTANT MATERIALS HIGH-TEMPERATURE ELECTRONIC HIGH TEMPERATURE RESISTANT MATERIALS HIGH-TEMPERATURE ELECTRONIC ELECTRONIC SYSTEM Electronics system is an integration of multiple, diverse materials with specially designed functionality based on their

More information

MOS CAPACITOR AND MOSFET

MOS CAPACITOR AND MOSFET EE336 Semiconductor Devices 1 MOS CAPACITOR AND MOSFET Dr. Mohammed M. Farag Ideal MOS Capacitor Semiconductor Devices Physics and Technology Chapter 5 EE336 Semiconductor Devices 2 MOS Capacitor Structure

More information

Semiconductor-Detectors

Semiconductor-Detectors Semiconductor-Detectors 1 Motivation ~ 195: Discovery that pn-- junctions can be used to detect particles. Semiconductor detectors used for energy measurements ( Germanium) Since ~ 3 years: Semiconductor

More information

SIMULATION OF III-V DEVICES SEMI-INSULATING MATERIALS CENTRE NATIONAL D'ETUDES DES TELECOMMUNICATIONS LANNION - FRANCE

SIMULATION OF III-V DEVICES SEMI-INSULATING MATERIALS CENTRE NATIONAL D'ETUDES DES TELECOMMUNICATIONS LANNION - FRANCE 494 SIMULATION OF III-V DEVICES SEMI-INSULATING MATERIALS S. MOTTET, J.E. VIALLET CENTRE NATIONAL D'ETUDES DES TELECOMMUNICATIONS 22300 LANNION - FRANCE ABSTRACT : Semi-insulating materials are commonly

More information

Classification of Solids

Classification of Solids Classification of Solids Classification by conductivity, which is related to the band structure: (Filled bands are shown dark; D(E) = Density of states) Class Electron Density Density of States D(E) Examples

More information

Lecture 1. OUTLINE Basic Semiconductor Physics. Reading: Chapter 2.1. Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations

Lecture 1. OUTLINE Basic Semiconductor Physics. Reading: Chapter 2.1. Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations Lecture 1 OUTLINE Basic Semiconductor Physics Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations Reading: Chapter 2.1 EE105 Fall 2007 Lecture 1, Slide 1 What is a Semiconductor? Low

More information

GaN based transistors

GaN based transistors GaN based transistors S FP FP dielectric G SiO 2 Al x Ga 1-x N barrier i-gan Buffer i-sic D Transistors "The Transistor was probably the most important invention of the 20th Century The American Institute

More information

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Literature Glen F. Knoll, Radiation

More information

Fundamentals of the Metal Oxide Semiconductor Field-Effect Transistor

Fundamentals of the Metal Oxide Semiconductor Field-Effect Transistor Triode Working FET Fundamentals of the Metal Oxide Semiconductor Field-Effect Transistor The characteristics of energy bands as a function of applied voltage. Surface inversion. The expression for the

More information

Section 12: Intro to Devices

Section 12: Intro to Devices Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals EE143 Ali Javey Bond Model of Electrons and Holes Si Si Si Si Si Si Si

More information

Semiconductor Physics fall 2012 problems

Semiconductor Physics fall 2012 problems Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each

More information

Chapter 1 Overview of Semiconductor Materials and Physics

Chapter 1 Overview of Semiconductor Materials and Physics Chapter 1 Overview of Semiconductor Materials and Physics Professor Paul K. Chu Conductivity / Resistivity of Insulators, Semiconductors, and Conductors Semiconductor Elements Period II III IV V VI 2 B

More information

1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00

1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00 1 Name: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND Final Exam Physics 3000 December 11, 2012 Fall 2012 9:00-11:00 INSTRUCTIONS: 1. Answer all seven (7) questions.

More information

Advantages / Disadvantages of semiconductor detectors

Advantages / Disadvantages of semiconductor detectors Advantages / Disadvantages of semiconductor detectors Semiconductor detectors have a high density (compared to gas detector) large energy loss in a short distance diffusion effect is smaller than in gas

More information

Theory of Hydrogen-Related Levels in Semiconductors and Oxides

Theory of Hydrogen-Related Levels in Semiconductors and Oxides Theory of Hydrogen-Related Levels in Semiconductors and Oxides Chris G. Van de Walle Materials Department University of California, Santa Barbara Acknowledgments Computations J. Neugebauer (Max-Planck-Institut,

More information

Introduction to Power Semiconductor Devices

Introduction to Power Semiconductor Devices ECE442 Power Semiconductor Devices and Integrated Circuits Introduction to Power Semiconductor Devices Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Semiconductor Devices Applications System Ratings

More information

Spring Semester 2012 Final Exam

Spring Semester 2012 Final Exam Spring Semester 2012 Final Exam Note: Show your work, underline results, and always show units. Official exam time: 2.0 hours; an extension of at least 1.0 hour will be granted to anyone. Materials parameters

More information

Scaling Issues in Planar FET: Dual Gate FET and FinFETs

Scaling Issues in Planar FET: Dual Gate FET and FinFETs Scaling Issues in Planar FET: Dual Gate FET and FinFETs Lecture 12 Dr. Amr Bayoumi Fall 2014 Advanced Devices (EC760) Arab Academy for Science and Technology - Cairo 1 Outline Scaling Issues for Planar

More information

Semiconductor Detectors

Semiconductor Detectors Semiconductor Detectors Summary of Last Lecture Band structure in Solids: Conduction band Conduction band thermal conductivity: E g > 5 ev Valence band Insulator Charge carrier in conductor: e - Charge

More information

Charge Carriers in Semiconductor

Charge Carriers in Semiconductor Charge Carriers in Semiconductor To understand PN junction s IV characteristics, it is important to understand charge carriers behavior in solids, how to modify carrier densities, and different mechanisms

More information

Xing Sheng, 微纳光电子材料与器件工艺原理. Doping 掺杂. Xing Sheng 盛兴. Department of Electronic Engineering Tsinghua University

Xing Sheng, 微纳光电子材料与器件工艺原理. Doping 掺杂. Xing Sheng 盛兴. Department of Electronic Engineering Tsinghua University 微纳光电子材料与器件工艺原理 Doping 掺杂 Xing Sheng 盛兴 Department of Electronic Engineering Tsinghua University xingsheng@tsinghua.edu.cn 1 Semiconductor PN Junctions Xing Sheng, EE@Tsinghua LEDs lasers detectors solar

More information

Enhancement of Ionization Efficiency of Acceptors by Their Excited States in Heavily Doped p-type GaN and Wide Bandgap Semiconductors

Enhancement of Ionization Efficiency of Acceptors by Their Excited States in Heavily Doped p-type GaN and Wide Bandgap Semiconductors Enhancement of Ionization Efficiency of cceptors by Their Excited States in Heavily Doped p-type GaN and Wide Bandgap Semiconductors Hideharu Matsuura Osaka Electro-Communication University 2004 Joint

More information

R. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition. Figures for Chapter 6

R. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition. Figures for Chapter 6 R. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition Figures for Chapter 6 Free electron Conduction band Hole W g W C Forbidden Band or Bandgap W V Electron energy Hole Valence

More information

Electrons, Holes, and Defect ionization

Electrons, Holes, and Defect ionization Electrons, Holes, and Defect ionization The process of forming intrinsic electron-hole pairs is excitation a cross the band gap ( formation energy ). intrinsic electronic reaction : null e + h When electrons

More information

Chem 481 Lecture Material 3/20/09

Chem 481 Lecture Material 3/20/09 Chem 481 Lecture Material 3/20/09 Radiation Detection and Measurement Semiconductor Detectors The electrons in a sample of silicon are each bound to specific silicon atoms (occupy the valence band). If

More information

Semiconductor Physics Problems 2015

Semiconductor Physics Problems 2015 Semiconductor Physics Problems 2015 Page and figure numbers refer to Semiconductor Devices Physics and Technology, 3rd edition, by SM Sze and M-K Lee 1. The purest semiconductor crystals it is possible

More information

Extensive reading materials on reserve, including

Extensive reading materials on reserve, including Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals EE143 Ali Javey Bond Model of Electrons and Holes Si Si Si Si Si Si Si

More information

EECS130 Integrated Circuit Devices

EECS130 Integrated Circuit Devices EECS130 Integrated Circuit Devices Professor Ali Javey 8/30/2007 Semiconductor Fundamentals Lecture 2 Read: Chapters 1 and 2 Last Lecture: Energy Band Diagram Conduction band E c E g Band gap E v Valence

More information

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

ESE 570: Digital Integrated Circuits and VLSI Fundamentals ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 23, 2018 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2018 Khanna Lecture Outline! CMOS Process Enhancements! Semiconductor

More information

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors. Fabrication of semiconductor sensor

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors. Fabrication of semiconductor sensor Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Fabrication of semiconductor sensor

More information

Preliminary measurements of charge collection and DLTS analysis of p + /n junction SiC detectors and simulations of Schottky diodes

Preliminary measurements of charge collection and DLTS analysis of p + /n junction SiC detectors and simulations of Schottky diodes Preliminary measurements of charge collection and DLTS analysis of p + /n junction SiC detectors and simulations of Schottky diodes F.Moscatelli, A.Scorzoni, A.Poggi, R.Nipoti DIEI and INFN Perugia and

More information

Silicon Detectors in High Energy Physics

Silicon Detectors in High Energy Physics Thomas Bergauer (HEPHY Vienna) IPM Teheran 22 May 2011 Sunday: Schedule Silicon Detectors in Semiconductor Basics (45 ) Detector concepts: Pixels and Strips (45 ) Coffee Break Strip Detector Performance

More information

2. Point Defects. R. Krause-Rehberg

2. Point Defects. R. Krause-Rehberg R. Krause-Rehberg 2. Point Defects (F-center in NaCl) 2.1 Introduction 2.2 Classification 2.3 Notation 2.4 Examples 2.5 Peculiarities in Semiconductors 2.6 Determination of Structure and Concentration

More information

Basic cell design. Si cell

Basic cell design. Si cell Basic cell design Si cell 1 Concepts needed to describe photovoltaic device 1. energy bands in semiconductors: from bonds to bands 2. free carriers: holes and electrons, doping 3. electron and hole current:

More information

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and cross-sectional area 100µm 2

More information

Semiconductors 1. Explain different types of semiconductors in detail with necessary bond diagrams. Intrinsic semiconductors:

Semiconductors 1. Explain different types of semiconductors in detail with necessary bond diagrams. Intrinsic semiconductors: Semiconductors 1. Explain different types of semiconductors in detail with necessary bond diagrams. There are two types of semi conductors. 1. Intrinsic semiconductors 2. Extrinsic semiconductors Intrinsic

More information

Quiz #1 Practice Problem Set

Quiz #1 Practice Problem Set Name: Student Number: ELEC 3908 Physical Electronics Quiz #1 Practice Problem Set? Minutes January 22, 2016 - No aids except a non-programmable calculator - All questions must be answered - All questions

More information

EE143 Fall 2016 Microfabrication Technologies. Evolution of Devices

EE143 Fall 2016 Microfabrication Technologies. Evolution of Devices EE143 Fall 2016 Microfabrication Technologies Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1-1 Evolution of Devices Yesterday s Transistor (1947) Today s Transistor (2006) 1-2 1 Why

More information

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors

Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Literature Glen F. Knoll, Radiation

More information

ELEC 4700 Assignment #2

ELEC 4700 Assignment #2 ELEC 4700 Assignment #2 Question 1 (Kasop 4.2) Molecular Orbitals and Atomic Orbitals Consider a linear chain of four identical atoms representing a hypothetical molecule. Suppose that each atomic wavefunction

More information

Current mechanisms Exam January 27, 2012

Current mechanisms Exam January 27, 2012 Current mechanisms Exam January 27, 2012 There are four mechanisms that typically cause currents to flow: thermionic emission, diffusion, drift, and tunneling. Explain briefly which kind of current mechanisms

More information

smal band gap Saturday, April 9, 2011

smal band gap Saturday, April 9, 2011 small band gap upper (conduction) band empty small gap valence band filled 2s 2p 2s 2p hybrid (s+p)band 2p no gap 2s (depend on the crystallographic orientation) extrinsic semiconductor semi-metal electron

More information

CLASS 12th. Semiconductors

CLASS 12th. Semiconductors CLASS 12th Semiconductors 01. Distinction Between Metals, Insulators and Semi-Conductors Metals are good conductors of electricity, insulators do not conduct electricity, while the semiconductors have

More information

Nanoelectronics. Topics

Nanoelectronics. Topics Nanoelectronics Topics Moore s Law Inorganic nanoelectronic devices Resonant tunneling Quantum dots Single electron transistors Motivation for molecular electronics The review article Overview of Nanoelectronic

More information

8. Schottky contacts / JFETs

8. Schottky contacts / JFETs Technische Universität Graz Institute of Solid State Physics 8. Schottky contacts / JFETs Nov. 21, 2018 Technische Universität Graz Institute of Solid State Physics metal - semiconductor contacts Photoelectric

More information

MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University

MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University Practice Final Exam 1 Read the questions carefully Label all figures

More information

The Electromagnetic Properties of Materials

The Electromagnetic Properties of Materials The lectromagnetic Properties of Materials lectrical conduction Metals Semiconductors Insulators (dielectrics) Superconductors Magnetic materials Ferromagnetic materials Others Photonic Materials (optical)

More information

Characterization of Interface State in Silicon Carbide. Metal Oxide Semiconductor Capacitors. Wei-Chieh Kao

Characterization of Interface State in Silicon Carbide. Metal Oxide Semiconductor Capacitors. Wei-Chieh Kao Characterization of Interface State in Silicon Carbide Metal Oxide Semiconductor Capacitors by Wei-Chieh Kao A Dissertation Presented in Partial Fulfillment of the Requirements for the Degree Doctor of

More information

EECS143 Microfabrication Technology

EECS143 Microfabrication Technology EECS143 Microfabrication Technology Professor Ali Javey Introduction to Materials Lecture 1 Evolution of Devices Yesterday s Transistor (1947) Today s Transistor (2006) Why Semiconductors? Conductors e.g

More information

ECE 497 JS Lecture - 12 Device Technologies

ECE 497 JS Lecture - 12 Device Technologies ECE 497 JS Lecture - 12 Device Technologies Spring 2004 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jose@emlab.uiuc.edu 1 NMOS Transistor 2 ρ Source channel charge density

More information

Study of semiconductors with positrons. Outlook:

Study of semiconductors with positrons. Outlook: Study of semiconductors with positrons V. Bondarenko, R. Krause-Rehberg Martin-Luther-University Halle-Wittenberg, Halle, Germany Introduction Positron trapping into defects Methods of positron annihilation

More information

Avalanche breakdown. Impact ionization causes an avalanche of current. Occurs at low doping

Avalanche breakdown. Impact ionization causes an avalanche of current. Occurs at low doping Avalanche breakdown Impact ionization causes an avalanche of current Occurs at low doping Zener tunneling Electrons tunnel from valence band to conduction band Occurs at high doping Tunneling wave decays

More information

Schottky Rectifiers Zheng Yang (ERF 3017,

Schottky Rectifiers Zheng Yang (ERF 3017, ECE442 Power Semiconductor Devices and Integrated Circuits Schottky Rectifiers Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Schottky Rectifier Structure 2 Metal-Semiconductor Contact The work function

More information

EE130: Integrated Circuit Devices

EE130: Integrated Circuit Devices EE130: Integrated Circuit Devices (online at http://webcast.berkeley.edu) Instructor: Prof. Tsu-Jae King (tking@eecs.berkeley.edu) TA s: Marie Eyoum (meyoum@eecs.berkeley.edu) Alvaro Padilla (apadilla@eecs.berkeley.edu)

More information

Self-study problems and questions Processing and Device Technology, FFF110/FYSD13

Self-study problems and questions Processing and Device Technology, FFF110/FYSD13 Self-study problems and questions Processing and Device Technology, FFF110/FYSD13 Version 2016_01 In addition to the problems discussed at the seminars and at the lectures, you can use this set of problems

More information

Schottky diodes. JFETs - MESFETs - MODFETs

Schottky diodes. JFETs - MESFETs - MODFETs Technische Universität Graz Institute of Solid State Physics Schottky diodes JFETs - MESFETs - MODFETs Quasi Fermi level When the charge carriers are not in equilibrium the Fermi energy can be different

More information

Traps in MOCVD n-gan Studied by Deep Level Transient Spectroscopy and Minority Carrier Transient Spectroscopy

Traps in MOCVD n-gan Studied by Deep Level Transient Spectroscopy and Minority Carrier Transient Spectroscopy Traps in MOCVD n-gan Studied by Deep Level Transient Spectroscopy and Minority Carrier Transient Spectroscopy Yutaka Tokuda Department of Electrical and Electronics Engineering, Aichi Institute of Technology,

More information

Lecture 3b. Bonding Model and Dopants. Reading: (Cont d) Notes and Anderson 2 sections

Lecture 3b. Bonding Model and Dopants. Reading: (Cont d) Notes and Anderson 2 sections Lecture 3b Bonding Model and Dopants Reading: (Cont d) Notes and Anderson 2 sections 2.3-2.7 The need for more control over carrier concentration Without help the total number of carriers (electrons and

More information

1. The MOS Transistor. Electrical Conduction in Solids

1. The MOS Transistor. Electrical Conduction in Solids Electrical Conduction in Solids!The band diagram describes the energy levels for electron in solids.!the lower filled band is named Valence Band.!The upper vacant band is named conduction band.!the distance

More information

ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems

ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Lec 6: September 14, 2015 MOS Model You are Here: Transistor Edition! Previously: simple models (0 and 1 st order) " Comfortable

More information

Semiconductor Physical Electronics

Semiconductor Physical Electronics Semiconductor Physical Electronics Sheng S. Li Department of Electrical Engineering University of Florida Gainesville, Florida Plenum Press New York and London Contents CHAPTER 1. Classification of Solids

More information

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

ESE 570: Digital Integrated Circuits and VLSI Fundamentals ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 29, 2019 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2019 Khanna Lecture Outline! CMOS Process Enhancements! Semiconductor

More information

Operation and Modeling of. The MOS Transistor. Second Edition. Yannis Tsividis Columbia University. New York Oxford OXFORD UNIVERSITY PRESS

Operation and Modeling of. The MOS Transistor. Second Edition. Yannis Tsividis Columbia University. New York Oxford OXFORD UNIVERSITY PRESS Operation and Modeling of The MOS Transistor Second Edition Yannis Tsividis Columbia University New York Oxford OXFORD UNIVERSITY PRESS CONTENTS Chapter 1 l.l 1.2 1.3 1.4 1.5 1.6 1.7 Chapter 2 2.1 2.2

More information

High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena

High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena Tsuyoshi Funaki 1a), Tsunenobu Kimoto 2, and Takashi Hikihara 1 1 Kyoto University, Dept. of Electrical Eng.

More information

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

ESE 570: Digital Integrated Circuits and VLSI Fundamentals ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 24, 2017 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2017 Khanna Lecture Outline! Semiconductor Physics " Band gaps "

More information

n N D n p = n i p N A

n N D n p = n i p N A Summary of electron and hole concentration in semiconductors Intrinsic semiconductor: E G n kt i = pi = N e 2 0 Donor-doped semiconductor: n N D where N D is the concentration of donor impurity Acceptor-doped

More information

ECE 442. Spring, Lecture -2

ECE 442. Spring, Lecture -2 ECE 442 Power Semiconductor Devices and Integrated circuits Spring, 2006 University of Illinois at Chicago Lecture -2 Semiconductor physics band structures and charge carriers 1. What are the types of

More information

Metal-oxide-semiconductor field effect transistors (2 lectures)

Metal-oxide-semiconductor field effect transistors (2 lectures) Metal-ide-semiconductor field effect transistors ( lectures) MOS physics (brief in book) Current-voltage characteristics - pinch-off / channel length modulation - weak inversion - velocity saturation -

More information

CMPEN 411 VLSI Digital Circuits. Lecture 03: MOS Transistor

CMPEN 411 VLSI Digital Circuits. Lecture 03: MOS Transistor CMPEN 411 VLSI Digital Circuits Lecture 03: MOS Transistor Kyusun Choi [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan, B. Nikolic] CMPEN 411 L03 S.1

More information

Novel High-Efficiency Crystalline-Si-Based Compound. Heterojunction Solar Cells: HCT (Heterojunction with Compound. Thin-layer)

Novel High-Efficiency Crystalline-Si-Based Compound. Heterojunction Solar Cells: HCT (Heterojunction with Compound. Thin-layer) Electronic Supplementary Material (ESI) for Physical Chemistry Chemical Physics. This journal is the Owner Societies 2014 Supplementary Information for Novel High-Efficiency Crystalline-Si-Based Compound

More information

Fabrication Technology, Part I

Fabrication Technology, Part I EEL5225: Principles of MEMS Transducers (Fall 2004) Fabrication Technology, Part I Agenda: Microfabrication Overview Basic semiconductor devices Materials Key processes Oxidation Thin-film Deposition Reading:

More information

Chapter 1 Semiconductor basics

Chapter 1 Semiconductor basics Chapter 1 Semiconductor basics ELEC-H402/CH1: Semiconductor basics 1 Basic semiconductor concepts Semiconductor basics Semiconductors, silicon and hole-electron pair Intrinsic silicon properties Doped

More information

MOS Capacitor MOSFET Devices. MOSFET s. INEL Solid State Electronics. Manuel Toledo Quiñones. ECE Dept. UPRM.

MOS Capacitor MOSFET Devices. MOSFET s. INEL Solid State Electronics. Manuel Toledo Quiñones. ECE Dept. UPRM. INEL 6055 - Solid State Electronics ECE Dept. UPRM 20th March 2006 Definitions MOS Capacitor Isolated Metal, SiO 2, Si Threshold Voltage qφ m metal d vacuum level SiO qχ 2 E g /2 qφ F E C E i E F E v qφ

More information

characterization in solids

characterization in solids Electrical methods for the defect characterization in solids 1. Electrical residual resistivity in metals 2. Hall effect in semiconductors 3. Deep Level Transient Spectroscopy - DLTS Electrical conductivity

More information

Lecture 04 Review of MOSFET

Lecture 04 Review of MOSFET ECE 541/ME 541 Microelectronic Fabrication Techniques Lecture 04 Review of MOSFET Zheng Yang (ERF 3017, email: yangzhen@uic.edu) What is a Transistor? A Switch! An MOS Transistor V GS V T V GS S Ron D

More information

! CMOS Process Enhancements. ! Semiconductor Physics. " Band gaps. " Field Effects. ! MOS Physics. " Cut-off. " Depletion.

! CMOS Process Enhancements. ! Semiconductor Physics.  Band gaps.  Field Effects. ! MOS Physics.  Cut-off.  Depletion. ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 3, 018 MOS Transistor Theory, MOS Model Lecture Outline! CMOS Process Enhancements! Semiconductor Physics " Band gaps " Field Effects!

More information

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006 UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm I Name: Closed book. One sheet of notes is allowed.

More information

EE301 Electronics I , Fall

EE301 Electronics I , Fall EE301 Electronics I 2018-2019, Fall 1. Introduction to Microelectronics (1 Week/3 Hrs.) Introduction, Historical Background, Basic Consepts 2. Rewiev of Semiconductors (1 Week/3 Hrs.) Semiconductor materials

More information

Fast Monte-Carlo Simulation of Ion Implantation. Binary Collision Approximation Implementation within ATHENA

Fast Monte-Carlo Simulation of Ion Implantation. Binary Collision Approximation Implementation within ATHENA Fast Monte-Carlo Simulation of Ion Implantation Binary Collision Approximation Implementation within ATHENA Contents Simulation Challenges for Future Technologies Monte-Carlo Concepts and Models Atomic

More information

EE 346: Semiconductor Devices

EE 346: Semiconductor Devices EE 346: Semiconductor Devices Lecture - 6 02/06/2017 Tewodros A. Zewde 1 DENSTY OF STATES FUNCTON Since current is due to the flow of charge, an important step in the process is to determine the number

More information

Defect Formation in 18 MeV Electron Irradiated MOS Structures

Defect Formation in 18 MeV Electron Irradiated MOS Structures Bulg. J. Phys. 33 (2006) 48 54 Defect Formation in 18 MeV Electron Irradiated MOS Structures S. Kaschieva 1, V. Gueorguiev 1, E. Halova 2, S. N. Dmitriev 3 1 Institute of Solid State Physics, Bulgarian

More information

Junction Diodes. Tim Sumner, Imperial College, Rm: 1009, x /18/2006

Junction Diodes. Tim Sumner, Imperial College, Rm: 1009, x /18/2006 Junction Diodes Most elementary solid state junction electronic devices. They conduct in one direction (almost correct). Useful when one converts from AC to DC (rectifier). But today diodes have a wide

More information

Dependence of Hole Concentration in p-type Silicon Solar Cell Wafers on Temperature and on Position within the Polycrystalline Ingot

Dependence of Hole Concentration in p-type Silicon Solar Cell Wafers on Temperature and on Position within the Polycrystalline Ingot Dependence of Hole Concentration in p-type Silicon Solar Cell Wafers on Temperature and on Position within the Polycrystalline Ingot H. Matsuura, T. Ishida, K. ishikawa. Fukunaga and T. Kuroda Department

More information

ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems

ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Lec 6: September 18, 2017 MOS Model You are Here: Transistor Edition! Previously: simple models (0 and 1 st order) " Comfortable

More information

JFET/MESFET. JFET: small gate current (reverse leakage of the gate-to-channel junction) More gate leakage than MOSFET, less than bipolar.

JFET/MESFET. JFET: small gate current (reverse leakage of the gate-to-channel junction) More gate leakage than MOSFET, less than bipolar. JFET/MESFET JFET: small gate current (reverse leakage of the gate-to-channel junction) More gate leakage than MOSFET, less than bipolar. JFET has higher transconductance than the MOSFET. Used in low-noise,

More information

Appendix 1: List of symbols

Appendix 1: List of symbols Appendix 1: List of symbols Symbol Description MKS Units a Acceleration m/s 2 a 0 Bohr radius m A Area m 2 A* Richardson constant m/s A C Collector area m 2 A E Emitter area m 2 b Bimolecular recombination

More information

Energy position of the active near-interface traps in metal oxide semiconductor field-effect transistors on 4H SiC

Energy position of the active near-interface traps in metal oxide semiconductor field-effect transistors on 4H SiC Energy position of the active near-interface traps in metal oxide semiconductor field-effect transistors on 4H SiC Author Haasmann, Daniel, Dimitrijev, Sima Published 2013 Journal Title Applied Physics

More information

Chapter 12: Electrical Properties. RA l

Chapter 12: Electrical Properties. RA l Charge carriers and conduction: Chapter 12: Electrical Properties Charge carriers include all species capable of transporting electrical charge, including electrons, ions, and electron holes. The latter

More information

Semiconductor physics I. The Crystal Structure of Solids

Semiconductor physics I. The Crystal Structure of Solids Lecture 3 Semiconductor physics I The Crystal Structure of Solids 1 Semiconductor materials Types of solids Space lattices Atomic Bonding Imperfection and doping in SOLIDS 2 Semiconductor Semiconductors

More information

CME 300 Properties of Materials. ANSWERS: Homework 9 November 26, As atoms approach each other in the solid state the quantized energy states:

CME 300 Properties of Materials. ANSWERS: Homework 9 November 26, As atoms approach each other in the solid state the quantized energy states: CME 300 Properties of Materials ANSWERS: Homework 9 November 26, 2011 As atoms approach each other in the solid state the quantized energy states: are split. This splitting is associated with the wave

More information

Session 0: Review of Solid State Devices. From Atom to Transistor

Session 0: Review of Solid State Devices. From Atom to Transistor Session 0: Review of Solid State Devices From Atom to Transistor 1 Objective To Understand: how Diodes, and Transistors operate! p n p+ n p- n+ n+ p 2 21 Century Alchemy! Ohm s law resistivity Resistivity

More information

UConn ECE 4211, Semiconductor Devices and Nanostructures Lecture Week 1 January 17, 2017

UConn ECE 4211, Semiconductor Devices and Nanostructures Lecture Week 1 January 17, 2017 UConn ECE 411, Semiconductor Devices and Nanostructures Lecture Week 1 January 17, 017 Device Operation: One of the objectives of this course is to understand operation of carrier transport in semiconductor

More information

Characterization of Irradiated Doping Profiles. Wolfgang Treberspurg, Thomas Bergauer, Marko Dragicevic, Manfred Krammer, Manfred Valentan

Characterization of Irradiated Doping Profiles. Wolfgang Treberspurg, Thomas Bergauer, Marko Dragicevic, Manfred Krammer, Manfred Valentan Characterization of Irradiated Doping Profiles, Thomas Bergauer, Marko Dragicevic, Manfred Krammer, Manfred Valentan Vienna Conference on Instrumentation (VCI) 14.02.2013 14.02.2013 2 Content: Experimental

More information

Semiconductors. SEM and EDAX images of an integrated circuit. SEM EDAX: Si EDAX: Al. Institut für Werkstoffe der ElektrotechnikIWE

Semiconductors. SEM and EDAX images of an integrated circuit. SEM EDAX: Si EDAX: Al. Institut für Werkstoffe der ElektrotechnikIWE SEM and EDAX images of an integrated circuit SEM EDAX: Si EDAX: Al source: [Cal 99 / 605] M&D-.PPT, slide: 1, 12.02.02 Classification semiconductors electronic semiconductors mixed conductors ionic conductors

More information

Lecture Outline. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Review: MOSFET N-Type, P-Type. Semiconductor Physics.

Lecture Outline. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Review: MOSFET N-Type, P-Type. Semiconductor Physics. ESE 57: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 24, 217 MOS Transistor Theory, MOS Model Lecture Outline! Semiconductor Physics " Band gaps " Field Effects! MOS Physics " Cutoff

More information

ECE 250 Electronic Devices 1. Electronic Device Modeling

ECE 250 Electronic Devices 1. Electronic Device Modeling ECE 250 Electronic Devices 1 ECE 250 Electronic Device Modeling ECE 250 Electronic Devices 2 Introduction to Semiconductor Physics You should really take a semiconductor device physics course. We can only

More information