Spin-Transfer Torque MRAM (STT-MRAM): Challenges and Prospects
|
|
- Ariel Porter
- 6 years ago
- Views:
Transcription
1 Spin-Transfer Torque MRAM (STT-MRAM): Challenges and Prospects Spin-Transfer Torque MRAM (STT-MRAM): Challenges and Prospects Yiming Huai Co-founder, Grandis, Inc., 1123 Cadillac Court, Milpitas, CA 95035, USA Yiming Huai Spin-transfer torque (STT) switching demonstrated in submicron sized magnetic tunnel junctions (MTJs) has stimulated considerable interest for developments of STT switched magnetic random access memory (STT-MRAM). Remarkable progress in STT switching with MgO MTJs and increasing interest in STT- MRAM in semiconductor industry have been witnessed in recent years. This paper will present a review on the progress in the intrinsic switching current density reduction and STT-MRAM prototype chip demonstration. Challenges to overcome in order for STT-MRAM to be a mainstream memory technology in future technology nodes will be discussed. Finally, potential applications of STT-MRAM in embedded and standalone memory markets will be outlined. 1. INTRODUCTION The giant magnetoresistance (GMR), discovered about twenty years ago, is at the heart of read-heads in high density hard disk drives ubiquitous in our daily lives Nobel Prize in physics was awarded to Albert Fert (Université Paris- Sud, Orsay, France) and Peter Grünberg (Forschungszentrum Jülich, Germany) for the discovery of the GMR phenomenon. GMR is the large variation in the electrical resistance of thin film structures composed of alternating ferromagnetic and nonmagnetic metal layers in response to an external magnetic field [1]. The applied field changes the relative magnetization orientations in ferromagnetic layers. When the magnetizations in adjacent layers are aligned parallel (P), electrons with spins oriented parallel to the magnetization (up electrons) pass easily from one layer to another, and anti-parallel (down) electrons are strongly scattered, leading to low resistivity for up electrons. If adjacent layers have magnetizations aligned antiparallel (AP), both spin up and spin down electrons are strongly scattered, and the resistance is high for all electrons. In other words, magnetization orientations (states) manipulated through an external magnetic field determines spin polarized electron transport, leading to low and high resistance states in GMR devices. It is the spin-based explanation for GMR that has led to a practical structure spin valve used in various GMR devices. A basic spin valve consists of two ferromagnetic layers separated by a thin nonmagnetic spacer layer. The GMR ratio is defined as ΔR= (R AP -R P )/R P, where R AP and R P denote the resistance for anti-parallel and parallel magnetization configurations between two ferromagnets. In 1997, spin-valve based read-out head in hard disk drives was commercialized and this soon became the industrial standard. In 1996, Slonczewski [2] and Berger [3] independently predicted an important adverse effect of GMR: spin-transfer effect, in which magnetization orientations (corresponding to low-high resistance states) in magnetic multilayer nanostructures can be manipulated via spin polarized current. The spin transfer phenomena occur for electron current flowing through two ferromagnetic layers separated by a thin nonmagnetic spacer layer. The current becomes spin polarized by transmission through or reflection from the first ferromagnetic layer (the pinned reference layer) and mostly maintains this polarization as it passes through the nonmagnetic spacer and enters and interacts with the second ferromagnetic layer (the free layer). This interaction exerts a spin torque on the magnetic moment of the free layer (FL) through a transfer of angular momentum from the polarized current to the FL magnetization. This spin torque can oppose the intrinsic damping of the FL causing the magnetization precession (exiting spin waves) and, or reverse the direction of the magnetization with sufficient current strengths. Spin-transfer can have important implications on electronic device applications since it provides a local means of magnetization manipulation rather than using the long-range Oersted field generated by a remote current. The early experiments for spin transfer driven magnetic precession [4-6] and switching [5-8] have been explored and reported in current-perpendicular-to-plane (CPP) nanoscale spin valve structures from 1998 to Since then, a rapidly increasing research effort on both experimental and theoretical side has been focusing on exploring its microscopic origins [9, 10] and switching dynamics [8, 11, 12] of spin-transfer effect, as well as its potential applications for STT based magnetic random access memory (MRAM) [13] and current tunable highfrequency oscillators [14]. All-metal based nanoscale spin valves exhibit low resistance of several Ohm (Ω) and small GMR ratio of 3-5% (corresponding to a voltage swing ΔV of less than 1 mv) [6, 7], which are not suitable for integration with CMOS technology. Magnetic tunnel junctions are necessary in MRAM due to their much large and adjustable resistances (~kω) and high signal voltage output (ΔV~ hundreds mv) which allow high-speed read operation AAPPS Bulletin December 2008, Vol. 18, No. 6 33
2 Celebrating 20 Years of GMR Past, Present, and Future (II) in memory applications. A basic MTJ is composed of two ferromagnetic layers separated by a thin insulating tunneling barrier. Similar to GMR, tunnel magnetoresistance (TMR) ratio is defined as ΔR= (R AP -R P )/R P, but has much large amplitude up to several hundred percent at room temperature [15]. A key milestone in STT research has been reached in early 2004 by first demonstration of STT switching in Al 2 O 3 based MTJs by Huai et al. [13, 16]. In late 2004, the revolutionary high TMR above 200% has been reported in MTJs with crystalline MgO barrier [15] following the early theoretical predictions [17, 18]. Such giant TMR originates from the fact that the electrons in highly spin-polarized Δ 1 band in (001) direction of bcc ferromagnetic electrodes can tunnel through the MgO (001) barrier more easily than the electrons in other bands (Δ 2 and Δ 5 ) [17, 18]. Subsequent STT research has been focusing on MgO MTJs. And in 2005, STT switching has been successfully demonstrated in MgO MTJs with TMR> 150% and small intrinsic switching current density J c0 = A/cm 2 [19-24]. STT-MRAM technology has significant advantages over magnetic-fieldswitched (toggle) MRAM that recently has been commercialized by Freescale [25]. The main hurdles associated with field switched MRAM are its more complex cell architecture with bypass line and remote write lines [Fig.1(a)], as well as its high write current ( in the order of ma) and poor scalability beyond 65 nm. The fields and the currents required to write the bits increase rapidly as the size of the MTJ elements shrinks. STT writing technology [Fig.1(b)], by directly passing a current through MTJ, overcomes these hurdles with much lower switching current (in the order of μa), simpler cell architecture which results in a cell that can be as small as 6F 2 (for single-bit cells) and reduced manufacturing cost, and more importantly, excellent scalability to future technology nodes. The main challenge for implementing STT writing mode in high-density and high-speed memory is the substantial reduction of the intrinsic current density J c0 required to switch the magnetization of the FL while maintaining high thermal stability required for long-term data retention. Minimal switching (write) current is required mainly for reducing the size of the selection transistor in series with MTJ in one transistor and one MTJ design (1T1J) to achieve the highest possible memory density, because the channel width (in unit of F) of the transistor is proportional to the write current for a given transistor current drivability (μa/μm). Minimal channel width of 1 F or the width of MTJ element is required for achieving ultimate smallest STT-MRAM cell size. Second, smaller voltage across MTJ decreases the probability of tunneling barrier degradation and breakdown, ensuring write endurance of the device. This is particularly important for STT-MRAM, because both sense and write currents are driven through MTJ cells. 2. SPIN-TRANSFER SWITCHING CHARACTERISTICS Before reviewing STT research progress in MTJs, it is useful to understand the intrinsic switching current density J c0 and the characteristics of switching current amplitude vs. switching current pulse [8, 12]. Under a macrospin model assuming a collinear geometry at zero temperature [8, 11, 26], the intrinsic current density J c0 required for current driven magnetization reversal in a MTJ with the magnetization in the film plane can be expressed as: J c0 = 2eαM st F (H + H k +2πM s ), (1) ħη where H is the field applied along the easy axis, M s and t F are the magnetization and thickness of the free layer respectively, α is the damping constant, and H k is the effective anisotropy field including magnetocrystalline anisotropy and shape anisotropy. The spin transfer efficiency η, is a function of the current polarity, polarization, and the relative angle between the free and pinned layer. Eq. (1) gives a current density threshold. When J > J c0, an initial stable magnetization state of the free layer along the easy axis becomes unstable at zero temperature and the magnetization enters a stable precessional state or a complete reversal occurs. The global picture of STT switching vs. the current pulse width is shown in Fig. 2 based on analytical and numerical calculations. Three distinct switching modes have been found: thermal activation, dynamic reversal and precessional switching [12]. Fig. 1: Comparison of memory cell architecture between conventional field switching MRAM (a) and spin-transfer torque MRAM (STT-MRAM) (b). For fast precessional switching in nanosecond (ns) regime (less than a few ns), the required switching current is several times greater than the instability current J c0 [8, 12, 26, 27]. Switching current density can be estimated J c0 (τ) J c0 + [ ln(π/2θ) τ ], where τ is the pulse width of switching current and θ being the initial angle between the magnetization vector of the free layer and the easy axis. 34 AAPPS Bulletin December 2008, Vol. 18, No. 6
3 Spin-Transfer Torque MRAM (STT-MRAM): Challenges and Prospects a high thermal stability (e.g. Δ over 40). Simple reduction of free layer magnetization M s and free layer dimensions (thickness and/or area product) accompanied also the reduction of thermal stability Δ, since Δ = K u V/k B T = H k M s V/2k B T. Below we review three J c0 reduction means: (1) Materials engineering, (2) MTJ structure improvement, and (3) MTJ with perpendicular magnetic anisotropy. Fig. 2: STT switching current density (normalized by J c0 ) as a function of current pulse width. At a finite temperature, thermal agitation plays an important role in reducing the switching current at long current pulses (>10 ns). In this slow thermal activated switching regime, the switching current is dependent on the current pulse width τ and thermal stability factor Δ = K u V/k B T of the free layer (assuming H = 0) [8, 11, 26]: k J c (τ) = J B T c0 [1 ln τ Ku V ( τ0 ) ], (2) where τ 0 ~ 1 ns is the inverse of the attempt frequency. K u V is anisotropy energy. From Eq. (2), one can obtain the intrinsic current density J c0 by extrapolating the experimentally obtained switching current density J c to τ = τ 0 [28, 29]. Thus obtained value of J c (τ 0 )= J c0 is a good measure of STT performance in a nano-magnetic device and corresponds to J c value at switching times ranged from 5 to 10 ns for room temperature operation [Fig. 2]. The dynamic switching occurs at intermediate current pulses within a small range of 3 to 10 ns, which corresponds to the operating speed of practical STT- MRAM. It is found that the magnetization reversal is determined by both the initial thermal distribution and the thermal agitation during the switching process [12]. The dynamic reversal is a combination of precessional and thermally activated switching in the nanosecond regime. Unlike dealing with other two regimes, it is difficult to obtain an explicit formula to describe the dynamic switching due to the complicated reversal process. Beyond the macro-spin model, a full micromagnetic modeling is required to completely understand the magnetization switching in the presence of spin current. First, the free layer may not behave as a single macro-spin due to the shape anisotropy. Second, the effect of the current-induced Oersted field on the magnetization vectors at the sample centre is much different from that at edge. A more detailed analysis of macro-spin dynamics and full micromagnetic modeling under spin-current induced torque can be found in Refs. [12], and [22]. 3. SPIN-T RANSFER SWITCHING IN MTJs AND SWITCHING CURRENT DENSITY REDUC- TION Refereeing to Eq. (1), the intrinsic switching J c0 reduction can be pursued through materials and magnetic anisotropy engineering (related to M s, the damping constant α, spin polarization factor η, and perpendicular anisotropy) and MTJ and free layer structures (related to effective spin polarization factor η eff ) improvement. The main challenge associated with J c0 reduction is to lower J c0 while maintaining 3.1. Materials Engineering With materials engineering, as seen from Eq. (1), the intrinsic current density J c0 can be reduced by using materials with a low magnetization M s and a high spin transfer efficiency η. Recent experiments showed that CoFeB incorporated in MgO MTJs is one of the most efficient materials for this purpose. For a typical Co 90 Fe 10 alloy, the magnetization value is 1540 emu/cm 3, whereas the magnetization of Co 40 Fe 20 B 20 is less than 1050 emu/cm 3, depending on the layer thickness. A rough estimate from equation (1) shows a reduction in J c0 by a factor of about 2, assuming the other parameters remain unchanged. With CoFeB MTJs with a crystalline MgO barrier instead of amorphous Al 2 O 3, the TMR increases from 30-70% to 300% [15] at room temperature due to higher spin polarization. The intrinsic current density J c0 is expected to be lowered by about two times due to much higher spin polarization. Figures 3 and 4 show the spin transfer switching results for MTJ cells with Al 2 O 3 and MgO barriers [19, 28, 29]. The similar MTJ structures were of the form Ta(3)/PtMn(20)/CoFe(2)/Ru(0.7)/ CoFeB(2)/AlOx/CoFeB(2.5)/Ta(3) (nm) and Ta(5)/PtMn(20)/CoFe(2)/Ru(0.8)/ CoFeB(2)/MgO/CoFeB(2.5)/Ta(8) (nm). For Al 2 O 3 MTJs, TMR is 42% with RA 40 Ω μm 2. MgO MTJs exhibits much higher TMR about 155% with RA 50 Ω μm 2. For both MgO and Al 2 O 3 MTJ cells, the average intrinsic switching current density J c0 was obtained by extrapolation of the switching current to 1 ns pulse width as described in the Sec. 2. J c0 is found to be A/cm 2 in MgO MTJs, which is about one third AAPPS Bulletin December 2008, Vol. 18, No. 6 35
4 Celebrating 20 Years of GMR Past, Present, and Future (II) of that ( A/cm 2 ) obtained in Al 2 O 3 junctions [19, 28, 29]. Fig. 3: Typical field (a) and current (b) driven magnetization switching for an MTJ cell with an Al 2 O 3 barrier. Current pulse width of 30ms was used in obtaining (b). From Refs. [19], [28] and [29]. Fig. 4: Typical field (a) and current (b) driven magnetization switching for an MTJ cell with an MgO barrier. Current pulse width of 30ms was used in obtaining (b). From Refs. [19], [28] and [29]. Fig. 5: The dielectric breakdown voltage as a function of the pulse width. From Ref. [12]. Fig. 6: A dual MTJ structure with anti-parallel magnetization orientation of two pinned layers. The reliability of the insulating barrier in MTJ is the key issue for STT-MRAM, since the current is passing through MTJ element in each read and write operation. Fig. 5 shows the breakdown characteristic of the MgO tunnel barrier as a function of the write current pulse width. The breakdown voltage in the nanosecond regime (1.8 V at 10 ns) is about 3 times greater than typical STT switching voltages [12, 23]. Furthermore, an endurance stress test at 10 ns pulse width and 1.0 V stress voltage shows negligible change in signal output after more than write cycles [12, 23]. In addition to M s and η, one can also reduce FL intrinsic damping constant for lowering J c0, but practically it is difficult to reduce FL α constant. Experimentally, it was found that J c0 depends also on dynamic damping enhanced by the spin-pumping effect at interface of FL and conducting metal capping layer like Ta [31]. A spin barrier layer can be configured on top of FL to substantially reduce spin-pumping induced damping [33]. While exploring low M s free layer materials and optimal capping layer for reducing spin-pumping induced damping, epitaxial (001) orientation in MgO MTJ structures should not be sacrificed in order to maintain high TMR MTJ and Free Layer Structure Improvement Dual magnetic tunnel junction (MTJ) structures have been developed consisting of two MgO insulating barriers of different resistances, two pinned reference layers aligned anti-parallel to one another, and a free layer sandwiched between the two insulating barriers, as shown in Fig. 6. In such a dual structure with anti-parallel magnetization configuration of two pinned layers, spin transfer torque can be enlarged due to spin torque acting on both side of free layer [32]. Recently, Diao et al. have successfully built such dual MgO barrier MTJ devices with TMR = 70%, which exhibited a signif- 36 AAPPS Bulletin December 2008, Vol. 18, No. 6
5 Spin-Transfer Torque MRAM (STT-MRAM): Challenges and Prospects icant reduction in intrinsic current density J c0 (= A/cm 2 ) compared to simple MgO stacks [Fig. 7, from Ref. [32]] [32]. In addition, the smaller asymmetry of J c (defined as the intrinsic current density ratio J P AP c0 / J AP P c0 ) in the dual MTJ structures has an advantage over single MTJ Fig. 7: (a) STT driven magnetization switching for a dual MTJ cell two MgO barriers, (b) the switching current density versus current pulse width for the dual MTJ structure of (a). structures that widens the read write margin for memory device design. Dual tunnel barriers sandwiching the free layer are also desirable because they avoid the spin pumping at the FL/Ta interface which may increase the effective damping [31, 32]. The synthetic free layer Co 40 Fe 40 B 20 /Ru/ Co 40 Fe 40 B 20 employed in MgO MTJs was demonstrated to enable higher thermal stability (Δ = 67) and lower switching current density (J c0 = A/cm 2 ), as compared to the equivalent single free layer Co 40 Fe 40 B 20 MTJ with (Δ = 56 and J c0 = A/cm 2 ) [30, 34]. The enhanced Δ is believed to be a result of high coercivity H c and strong exchange coupling [34]. The origin of the reduction of J c0 is not fully understood but it may be due to spin-accumulation in the free layer. It was found that spin accumulation can enhance the spin-torque efficiency, thus reducing intrinsic current density [35] MTJ with Perpendicular Anisotropy By closely looking at Eq. (1), the intrinsic current density is primarily governed by the thin film easy-plane anisotropy 4πM s (>10 koe). The anisotropy field H k, mainly dominated by shape anisotropy, is about several hundred Oe. Therefore, most efficient means of reducing J c0 would be to use a FL with perpendicular anisotropy with H k >4πM s. In this case, the magnetization is out of the film plane, which would eliminate the 2πM s term in Eq. (1), where the H k becomes the effective perpendicular anisotropy H k =H k -4πM s. The perpendicular anisotropy technology is being increasingly used to enhance storage capacity for high-density hard disk drives. A detailed theoretical analysis of STT switching in MTJ with perpendicular anisotropy for 28 nm technology node has been presented at IEDM 2007 [36]. There are many distinct advantages of perpendicular STT switching based MTJs, compared to in-plane MTJs [36, 37]. The switching current density J c0 is expected to be reduced significantly in perpendicular MTJ (P-MTJ) because of eliminating the dominant term of the 2πM s in Eq. (1) (assuming the other materials parameters remain unchanged). In addition, for a p- MTJ, the thermal energy barrier is provided by effective perpendicular anisotropy H k (=H k -4πM s ), instead of shape anisotropy. Therefore elongated cell shape is no longer needed. P-MTJ can use circular cell shape, which facilitates manufacturability in smaller technology nodes beyond 45 nm. Large H k >1000 Oe usually found in perpendicular FL provide significantly large thermal stability Δ, thus sustainable at very small technology nodes, as shown in Fig. 8. The smaller circular area (e.g. 1 F 2 ), compared to elongated shape area, also leads to smaller switching current for a given J c0, resulting in smaller cell size. I c0 /Δ is an important figure of metric for comparison of STT performance between p-mtj and in-plane MTJ. Finally, dipole field interaction between neighboring cells can also be reduced in high bit density layout [36]. Fig. 8: Scalability of data retention. Calculated activation energy K u V for both p-mtj and in-pane MTJ as a figure of merit for data retention. AR denotes aspect ratio. From Ref. [36]. The perpendicular STT switching was first demonstrated in metallic spin valve systems with out-of-plane anisotropy [38]. In 2007, Toshiba presented first STT switching in MTJs with perpendicular anisotropy at the 52nd Magnetism and Magnetic Materials Conference [39]. P- MTJs composed of TbCoFe/CoFeB/MgO/ CoFeB/TbCoFe (as shown in Fig. 9) have been patterned to a circular shape with AAPPS Bulletin December 2008, Vol. 18, No. 6 37
6 Celebrating 20 Years of GMR Past, Present, and Future (II) 0.13 μm diameter. The STT writing was performed at current pulse width ranged from ns. The intrinsic current density A/cm 2 has been achieved with a large thermal stability Δ=107 [Fig. 10] [39]. More recently, lower J c0 = A/cm 2 and higher TMR of 60% have also been demonstrated in MgO based p-mtjs consisting of CoFeB wedge/ [Pd/Co] 2/Pd free layer and FePt/CoFeB reference layer [40]. For p-mtj to be an ultimate solution for high density and scalable STT-MRAM, one need to further improve TMR (>100%) and reduce J c0 close to or below A/cm 2 by enhancing spin polarization and reducing free layer damping. Perpendicular films often have higher damping constant α due to Fig. 9: Cell structure of TbCoFe/CoFeB based perpendicular MTJs. From Ref. [39]. Fig. 10: Resistance verse magnetic field applied perpendicular to the film layers (a), and resistance verse voltage pulses (b) for a p-mtj with the structure in Fig. 9. From Ref. [39]. strong spin-orbit coupling. It should be also noted that a small and consistent net anisotropy H k of a perpendicular film requires a delicate balancing between relatively large numbers (H k and 4πM s ), and in addition, H k is believed to be sensitive to desired crystalline structures required for perpendicular anisotropy, all this may result in large bit-to-bit variations. 4. STT-MRAM CHIP DEMON- STRATION Parallel to tremendous effort to explore optimal MTJ materials and structures for reducing the intrinsic switching current density while maintaining high thermal stability, significant work has also been carried out to demonstrate STT-MRAM at chip level in order to proven MTJ STT switching characteristic and reliability such as bit write yield, write current distribution, write cycle endurance [41] and circuitry functionality such as bipolar current drive and low read disturb sensing scheme [42]. In December 2005, Sony announced a first 4 kbit SpinRAM chip demonstration at 2005 IEDM meeting [41]. The memory cell is based on 1T1J architecture. The chip was fabricated with a 180 nm CMOS process with 4 metal layers. The optimized low-m s CoFeB free layer has been used in MgO MTJs (with high TMR of 160% and RA of 20 Ω μm 2 ) for achieving small intrinsic switching current density of ~ A/cm 2. Characteristics of switching current vs. write current pulse width from 1ns to 1 ms has been examined. In the thermal activated range of 10 ns (nanosecond) to 1 ms (millisecond), the current required for switching the magnetization increases with decreasing write current pulse width, as predicted by the macrospin model [8, 11] (referring to Fig. 2). For fast precessional switching (τ 3 ns), the write current amplitude increases rapidly with increasing writing speed. The fastest switching speed within 2 ns has been demonstrated in both write current directions at the cost of high switching current (~625 μa in average) [41]. On the other hand, low switching current below 200 μa can be also achieved, but at very low speed (τ ~ms) [41]. From this current (which dictates cell size) vs. switching speed feature, one may consider tradeoff between write speed and memory density, depending on the applications. Embedded applications often require fast performance rather than bit density, larger cell size (30-40 F 2 ) can be allowed. In February 2007, a Hitachi and Tohuku University joint collaboration announced a 2 Mbit STT-MRAM demo at ISSCC meeting [42, 43]. The chip was manufactured in a 200 nm CMOS process technology. The cell size is μm, which is equivalent to 16 F 2 (F is the design rule of cell section which equals to 0.4 μm), which is smaller than toggle MRAM. A high performance of 100 ns write and 40 ns read operation has been achieved at a low voltage of 1.8 V. The capacity of the chip (2 Mbit) is nearly three orders of magnitude larger than that of Sony s 4 Kbit demo chip. More importantly, two major circuit technologies for STT writing have been developed in their demo chip. One is related to bidirectional current writing, required in STT-MRAM to write high resistance state 1 and low resistance state 0. The other circuit technology has addressed the read disturb errors caused by reading current unintentionally disturbing or writing the bit. This read disturb possibility can be minimized or eliminated by choosing the read current that flow in the direction to align parallel the magnetization of the MTJ element. In this case, the resistance is low but the read current is high. In this way, only the low read current with high resistance state could disturb the bit, thus substantially reducing the read disturb possibility [42, 43]. In short, with intensified effort on STT- MRAM in semiconductor industry in recent years, future STT-MRAM demo chips with high performance and advanced functionality at leading technology nodes (90 nm and beyond) could be expected in near future. 38 AAPPS Bulletin December 2008, Vol. 18, No. 6
7 Spin-Transfer Torque MRAM (STT-MRAM): Challenges and Prospects 5. STT-MRAM PROSPECTS Spin-transfer torque writing technology combined with high TMR enabled by MgO based MTJs provides a promising path to realize a future universal memory with low power consumption, high density, fast write and read speed (a few ns), unlimited endurance and excellent scalability to small technology nodes. STT research and understanding in MgO based in-plane MTJs are more advanced comparing to p-mtjs. Low J c0 (close to A/cm 2 ) with reasonably high thermal stability (Δ = 40-50) could be achieved in MgO in-plane MTJs at 90 and 65 nm technology nodes, which are suitable for high-performance and low-density embedded memory applications. The scalability of cell shape anisotropy limited thermal stability and manufacturability of elongated memory cells beyond 45 nm for in-plane MTJs can pose significant challenge for high-density memory applications. STT switching in p-mtjs could be one of the most efficient solutions for high-density STT-MRAM at and beyond 45 nm technology nodes. STT-MRAM technology can revolutionize the performance of electronic products in many areas, from consumer electronics and personal computers to automotive, medical, military and space. It also has the potential to create new sectors in the semiconductor industry and enable entirely new products not yet envisaged. STT-MRAM has key initial markets replacing embedded technologies such as embedded SRAM, embedded Flash and DRAM, and providing new functionality at 65nm and beyond. In automotive applications, it has higher speed and lower power consumption than embedded Flash and is denser than embedded SRAM. In portable and handset applications, it can eliminate multichip packages, provide a unified memory subsystem and reduce system power consumption for extended battery life. In personal computers, it can replace SRAM for high-speed cache, Flash for non-volatile cache and PSRAM (pseudo-static random access memory) and DRAM for high speed program execution. In short, remarkable progress has been made in STT-MRAM research and product development since the first demonstration of STT switching in MTJs in Since it often takes more than 10 years to commercialize new phenomena, the commercialized STT-MRAM could be expected beyond ACKNOWLEDGEMENTS I would like to thank M. Pakala, Z. Diao, F. Albert, L. C. Wang, Y. Ding, D. Apalkov, Z. Li, H. Nagai, K. Kawabata, A. Panchula, A. D. Smith, X. Tang, S. Watts, D. Yu, X. Luo, S. Wang, E. Chen, Y. Xu, Te-ho Wu, H. Yoda, Stu Wolf, Y. K. Kim, K. Ando, H. Ohno, Jordan Katine, W. Mass and J. Zhang for stimulating discussions. I also want to thank Bill Almon for the strong encouragement throughout my work on STT-MRAM. REFERENCES [1] M. N. Baibich et al., Phys. Rev. Lett. 61, 2472 (1988). [2] J. C. Slonczewski, J. Magn. Magn. Mater. 159, L1 (1996). [3] L. Berger, Phys. Rev. B 54, 9353 (1996). [4] M. Tsoi et al., Phys. Rev. Lett. 80, 4281 (1998); ibid. 81, 493 (E) (1998). [5] E. B. Myers et al., Science 285, 867 (1999). [6] J. A. Katine, F. J. Albert, R. A. Buhrman, E. B. Myers, and D. C. Ralph, Phys. Rev. Lett. 84, 3149 (2000). [7] F. J. Albert, J. A. Katine, R. A. Buhrmann, and D. C. Ralph, Appl. Phys. Lett. 77, 3809 (2000). [8] J. Z. Sun, Phys. Rev. B 62, 570 (2000). [9] X. Waintal, E. B. Myers, P. W. Brouwer, and D. C. Ralph, Phys. Rev. B 62, (2000); M. D. Stiles and A. Zangwill, Phys. Rev. B 66, (2002); S. Zhang, P. M. Levy, and A. Fert, Phys. Rev. Lett. 88, (2002); Z. Li and S. Zhang, Phys. Rev. B 69, (2004); D. M. Apalkov and P. Visscher, Phys. Rev. B 72, (2005); P. M. Levy and A. Fert, Phys. Rev. Lett. 97, (2006). [10] Z. Li, S. Zhang, Z. Diao, Y. Ding, X. Tang, D. Apalkov, Z. Yang, K. Kawabata, and Y. Huai, Phys. Rev. Lett. 100, (2008). [11] R. H. Koch, J. A. Katine, and J. Z. Sun, Phys. Rev. Lett. 92, (2004); J. Z. Sun et al., Proceeding of SPIE 5359, 445 (2004). [12] Zhitao Diao, Zhanjie Li, Shengyuang Wang, Yunfei Ding, Alex Panchula, Eugene Chen, Lien- Chang Wang, and Yiming Huai, J. Phys.: Condens. Matter. 19, (2007). [13] Yiming Huai, Frank Albert, Paul Nguyen, Mahendra Pakala, and Thierry Valet, Appl. Phys. Lett. 84, 3118 (2004). [14] S. I. Kiselev et al., Nature 425, 380 (2003); S. I. Kiselev et al., Phys. Rev. Lett. 93, (2004). [15] Stuart Parkin et al., Nature Materials 3, 662 (2004); Shinji Yuasa et al., Nature Materials 3, 868 (2004). [16] G. D. Fuchs, N. C. Emley, I. N. Krivorotov, P. M. Braganca, E. M. Ryan, S. I. Kiselev, J. C. Sankey, D. C. Ralph, R. A. Burman, and J. A. Katine, Appl. Phys. Lett. 85, 1205 (2004). [17] W. H. Butler, X.-G. Zhang, T. C. Schulthess, and J. M. MacLaren, Phys. Rev. B 63, (2001). [18] J. Mathon and A. Umerski, Phys. Rev. B 63, (2001). [19] Z. Diao, D. Apalkov, M. Pakala, Y. Ding, A. Panchula, and Y. Huai, Appl. Phys. Lett. 87, (2005). [20] H. Kubota, A. Fukushima, Y. Ootani, S. Yuasa, K. Ando, H. Maehara, K. Tsunekawa, D. D. Dyayaprawira, N.Watanabe, and Y. Suzuki, Jpn. J. Appl. Phys. 44, L1237 (2005). [21] J. Hayakawa, S. Ikeda, Y. M. Lee, R. Sasaki, T. Meguro, F. Matsukura, H. Takahashi, and H. Ohno, Jpn. J. Appl. Phys. 44, L1267 (2005). [22] Yiming Huai, Dmytro Apalkov, AAPPS Bulletin December 2008, Vol. 18, No. 6 39
8 Celebrating 20 Years of GMR Past, Present, and Future (II) Zhitao Diao, Yunfei Ding, Alex Panchula, Mahendra Pakala, Lien- Chang Wang and Eugene Chen, Jpn. J. Appl. Phys. 45, 3835 (2006). [23] Y. Huai, Z. Diao, Y. Ding, A. Panchula, S. Wang, Z. Li, D. Apalkov, X. Luo, H. Nagai, A. Driskill-Smith, and E. Chen, 2007 SSDM Technical Digest (2007), p.742. [24] J. M. Lee, Ching-Ming Lee, L. X. Ye, M. C. Weng, Y. C. Chen, J. P. Su, and Te-ho Wu, J. Appl. Phys. 101, 09A505 (2007); J. M. Lee, L. X. Ye, M. C. Weng, Y. C. Chen, Simon C. Li, J. P. Su, and Te-ho Wu, IEEE Tran. Magn. 43, 3349 (2007). [25] M. Durlam et al., IEEE IEDM (2003), p [26] J. Z. Sun, IBM J. Res. & Dev. 50, 81 (2006). [27] A. A. Tulapurkar, T. Devolder, K. Yagami, P. Crozat, C. Chappert, A. Fukushima, and Y. Suzuki, Appl. Phys. Lett. 85, 5358 (2004). [28] Zhitao Diao, Mahendra Pakala, Alex Panchula, Yunfei Ding, Dmytro Apalkov, Lien-Chang Wang, Eugene Chen, and Yiming Huai, J. Appl. Phys. 99, 08G510 (2006). [29] Yiming Huai, Mahendra Pakala, Zhitao Diao, Dmytro Apalkov, Yunfei Ding, and Alex Panchula, J. of Mag. Mag. Mat. 304, 88 (2006). [30] Shoji Ikeda, Jun Hayakawa, Young Min Lee, Fumihiro Matsukura, Yuzo Ohno, Takahiro Hanyu, and Hideo Ohno, IEEE TRANSAC- TIONS ON ELECTRON DEVICES 54, 991 (2007). [31] Y. Tserkovnyak, A. Brataas, and G. Bauer, Phys. Rev. B 67, (2003). [32] Zhitao Diao, Alex Panchula, Yunfei Ding, Mahendra Pakala, Shengyuan Wang, Zhanjie Li, Dmytro Apalkov, Hideyasu Nagai, Alexander Driskill- Smith, Lien-Chang Wang, Eugene Chen, and Yiming Huai, Appl. Phys. Lett. 90, (2007). [33] T. Valet, US Patent Specification 7,088,609 (2006). [34] J. Hayakawa, S. Ikeda, Y. M. Lee, R. Sasaki, T. Meguro, F. Matsukura, H. Takahashi, and H. Ohno, Jpn. J. Appl. Phys. 45, L1057 (2006). [35] K. Eid, R. Fonck, M. A. Darwish, W. P. Pratt, Jr., and J. Bass, J. Appl. Phys. 91, 8102 (2002). [36] U. K. Klostermann, M. Angerbauer, U. Grüning, F. Kreupl, M. Rührig, F. Dahmani, M. Kund, G. Müller, 2007 IEDM Technical Digest (2007), p [37] Xiaochun Zhu and Jian-Gang Zhu, IEEE Trans. Magn. 42, 2739 (2006). [38] S. Mangin, D. Ravelosona, J. A. Katine, M. J. Carey, B. D. Terris, and E. E. Fullerton, Nature Materials 5, 210 (2006). [39] Masahiko Nakayama, Tadashi Kai, Naoharu Shimomura, Minoru Amano, Eiji Kitagawa, Toshihiko Nagase, Masatoshi Yoshikawa, Tatsuya Kishi, Sumio Ikegawa, and Hiroaki Yoda, J. Appl. Phys. 103, 07A710 (2008). [40] Toshihiko Nagase, Katsuya Nishiyama, Masahiko Nakayama, Naoharu Shimomura, Minoru Amano, Tatsuya Kishi, and Hiroaki Yoda, C , APS Meeting (2008). [41] M. Hosomi, H. Yamagishi, T. Yamamoto, K. Bessho, Y. Higo, K. Yamane, H. Yamada, M. Shoji, H. Hachino, C. Fukumoto, H. Nagao, and H. Kano, 2005 IEDM Technical Digest (2005), p [42] T. Kawahara, R. Takemura, K. Miura, J. Hayakawa, S. Ikeda, Y. Lee, R. Sasaki, Y. Goto, K. Ito, T. Meguro, F. Matsukura, H. Takahashi, H. Matsuoka, and H. Ohno, 2007 ISSCC Technical Digest (2007), p [43] T. Kawahara, R. Takemura, K. Miura, J. Hayakawa, S. Ikeda, Y. Lee, R. Sasaki, Y. Goto, K. Ito, T. Meguro, F. Matsukura, H. Takahashi, H. Matsuoka, and H. Ohno, IEEE J. of Solid-State Circuits 43, 109 (2008). 40 AAPPS Bulletin December 2008, Vol. 18, No. 6
Magnetization Dynamics in Spintronic Structures and Devices
Japanese Journal of Applied Physics Vol. 45, No. 5A, 2006, pp. 3835 3841 #2006 The Japan Society of Applied Physics Magnetization Dynamics in Spintronic Structures and Devices Structure, Materials and
More informationLow Energy Spin Transfer Torque RAM (STT-RAM / SPRAM) Zach Foresta April 23, 2009
Low Energy Spin Transfer Torque RAM (STT-RAM / SPRAM) Zach Foresta April 23, 2009 Overview Background A brief history GMR and why it occurs TMR structure What is spin transfer? A novel device A future
More informationSpin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory
IOP PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER J. Phys.: Condens. Matter 19 (2007) 165209 (13pp) doi:10.1088/0953-8984/19/16/165209 Spin-transfer torque switching in magnetic tunnel junctions and
More informationPerpendicular MTJ stack development for STT MRAM on Endura PVD platform
Perpendicular MTJ stack development for STT MRAM on Endura PVD platform Mahendra Pakala, Silicon Systems Group, AMAT Dec 16 th, 2014 AVS 2014 *All data in presentation is internal Applied generated data
More informationSPIN TRANSFER TORQUES IN HIGH ANISOTROPY MAGNETIC NANOSTRUCTURES
CRR Report Number 29, Winter 2008 SPIN TRANSFER TORQUES IN HIGH ANISOTROPY AGNETIC NANOSTRUCTURES Eric Fullerton 1, Jordan Katine 2, Stephane angin 3, Yves Henry 4, Dafine Ravelosona 5, 1 University of
More informationCurrent-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel. Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer
Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer Jun HAYAKAWA 1,2, Shoji IKEDA 2, Young Min LEE 2, Ryutaro SASAKI
More informationLow Energy SPRAM. Figure 1 Spin valve GMR device hysteresis curve showing states of parallel (P)/anti-parallel (AP) poles,
Zachary Foresta Nanoscale Electronics 04-22-2009 Low Energy SPRAM Introduction The concept of spin transfer was proposed by Slonczewski [1] and Berger [2] in 1996. They stated that when a current of polarized
More informationSpin-transfer switching and thermal stability in an FePt/Au/FePt nanopillar prepared by alternate monatomic layer deposition
Spin-transfer switching and thermal stability in an FePt/Au/FePt nanopillar prepared by alternate monatomic layer deposition Kay Yakushiji, Shinji Yuasa, Taro Nagahama, Akio Fukushima, Hitoshi Kubota,
More informationA Perpendicular Spin Torque Switching based MRAM for the 28 nm Technology Node
A Perpendicular Spin Torque Switching based MRAM for the 28 nm Technology Node U.K. Klostermann 1, M. Angerbauer 1, U. Grüning 1, F. Kreupl 1, M. Rührig 2, F. Dahmani 3, M. Kund 1, G. Müller 1 1 Qimonda
More informationSwitching Properties in Magnetic Tunnel Junctions with Interfacial Perpendicular Anisotropy: Micromagnetic Study
1 Switching Properties in Magnetic Tunnel Junctions with Interfacial Perpendicular Anisotropy: Micromagnetic Study R. Tomasello 1, V. Puliafito 2, B. Azzerboni 2, G. Finocchio 2 1 Department of Computer
More informationEnhancement in spin-torque efficiency by nonuniform spin current generated within a tapered nanopillar spin valve
Enhancement in spin-torque efficiency by nonuniform spin current generated within a tapered nanopillar spin valve P. M. Braganca,* O. Ozatay, A. G. F. Garcia, O. J. Lee, D. C. Ralph, and R. A. Buhrman
More informationWouldn t it be great if
IDEMA DISKCON Asia-Pacific 2009 Spin Torque MRAM with Perpendicular Magnetisation: A Scalable Path for Ultra-high Density Non-volatile Memory Dr. Randall Law Data Storage Institute Agency for Science Technology
More informationSpin Torque and Magnetic Tunnel Junctions
Spin Torque and Magnetic Tunnel Junctions Ed Myers, Frank Albert, Ilya Krivorotov, Sergey Kiselev, Nathan Emley, Patrick Braganca, Greg Fuchs, Andrei Garcia, Ozhan Ozatay, Eric Ryan, Jack Sankey, John
More informationMRAM: Device Basics and Emerging Technologies
MRAM: Device Basics and Emerging Technologies Matthew R. Pufall National Institute of Standards and Technology 325 Broadway, Boulder CO 80305-3337 Phone: +1-303-497-5206 FAX: +1-303-497-7364 E-mail: pufall@boulder.nist.gov
More informationNonvolatile CMOS Circuits Using Magnetic Tunnel Junction
November 3-4, 2011 Berkeley, CA, USA Nonvolatile CMOS Circuits Using Magnetic Tunnel Junction Hideo Ohno 1,2 1 Center for Spintronics Integrated Systems, Tohoku University, Japan 2 Laboratory for Nanoelectronics
More informationFrom Spin Torque Random Access Memory to Spintronic Memristor. Xiaobin Wang Seagate Technology
From Spin Torque Random Access Memory to Spintronic Memristor Xiaobin Wang Seagate Technology Contents Spin Torque Random Access Memory: dynamics characterization, device scale down challenges and opportunities
More informationTime resolved transport studies of magnetization reversal in orthogonal spin transfer magnetic tunnel junction devices
Invited Paper Time resolved transport studies of magnetization reversal in orthogonal spin transfer magnetic tunnel junction devices Georg Wolf a, Gabriel Chaves-O Flynn a, Andrew D. Kent a, Bartek Kardasz
More informationS. Mangin 1, Y. Henry 2, D. Ravelosona 3, J.A. Katine 4, and S. Moyerman 5, I. Tudosa 5, E. E. Fullerton 5
Spin transfer torques in high anisotropy magnetic nanostructures S. Mangin 1, Y. enry 2, D. Ravelosona 3, J.A. Katine 4, and S. Moyerman 5, I. Tudosa 5, E. E. Fullerton 5 1) Laboratoire de Physique des
More informationMesoscopic Spintronics
Mesoscopic Spintronics Taro WAKAMURA (Université Paris-Sud) Lecture 1 Today s Topics 1.1 History of Spintronics 1.2 Fudamentals in Spintronics Spin-dependent transport GMR and TMR effect Spin injection
More informationLecture 6 NEW TYPES OF MEMORY
Lecture 6 NEW TYPES OF MEMORY Memory Logic needs memory to function (efficiently) Current memories Volatile memory SRAM DRAM Non-volatile memory (Flash) Emerging memories Phase-change memory STT-MRAM (Ferroelectric
More informationCurrent-driven Magnetization Reversal in a Ferromagnetic Semiconductor. (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction
Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction D. Chiba 1, 2*, Y. Sato 1, T. Kita 2, 1, F. Matsukura 1, 2, and H. Ohno 1, 2 1 Laboratory
More informationMODELING OF THE ADVANCED SPIN TRANSFER TORQUE MEMORY: MACRO- AND MICROMAGNETIC SIMULATIONS
MODELING OF THE ADVANCED SPIN TRANSFER TORQUE MEMORY: MACRO- AND MICROMAGNETIC SIMULATIONS Alexander Makarov, Viktor Sverdlov, Dmitry Osintsev, Josef Weinbub, and Siegfried Selberherr Institute for Microelectronics
More informationUltrafast switching of a nanomagnet by a combined out-of-plane and in-plane polarized spin-current pulse
Ultrafast switching of a nanomagnet by a combined out-of-plane and in-plane polarized spin-current pulse O. J. Lee, V. S. Pribiag, P. M. Braganca, P. G. Gowtham, D. C. Ralph and R. A. Buhrman Cornell University,
More informationarxiv: v1 [cond-mat.mtrl-sci] 28 Jul 2008
Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers Patryk Krzysteczko, 1, Xinli Kou, 2 Karsten Rott, 1 Andy Thomas, 1 and Günter Reiss 1 1 Bielefeld University,
More informationGiant Magnetoresistance
Giant Magnetoresistance Zachary Barnett Course: Solid State II; Instructor: Elbio Dagotto; Semester: Spring 2008 Physics Department, University of Tennessee (Dated: February 24, 2008) This paper briefly
More informationSome pictures are taken from the UvA-VU Master Course: Advanced Solid State Physics by Anne de Visser (University of Amsterdam), Solid State Course
Some pictures are taken from the UvA-VU Master Course: Advanced Solid State Physics by Anne de Visser (University of Amsterdam), Solid State Course by Mark Jarrel (Cincinnati University), from Ibach and
More informationMagnetic oscillations driven by the spin Hall effect in 3-terminal magnetic tunnel junction. devices. Cornell University, Ithaca, NY 14853
Magnetic oscillations driven by the spin Hall ect in 3-terminal magnetic tunnel junction devices Luqiao Liu 1, Chi-Feng Pai 1, D. C. Ralph 1,2, R. A. Buhrman 1 1 Cornell University, Ithaca, NY 14853 2
More informationSupplementary material for : Spindomain-wall transfer induced domain. perpendicular current injection. 1 ave A. Fresnel, Palaiseau, France
SUPPLEMENTARY INFORMATION Vertical-current-induced Supplementary material for : Spindomain-wall transfer induced domain motion wallin MgO-based motion in MgO-based magnetic magnetic tunnel tunneljunctions
More informationChapter 67 - Material issues for efficient Spin-Transfer Torque RAMs
Chapter 67 - Material issues for efficient Spin-Transfer Torque RAMs Kamaram Munira and Avik W. Ghosh 67.1. INTRODUCTION Due to physical and electrical scaling challenges, the MOSFET-based memory industry
More informationA Technology-Agnostic MTJ SPICE Model with User-Defined Dimensions for STT-MRAM Scalability Studies
A Technology-Agnostic MTJ SPICE Model with User-Defined Dimensions for STT-MRAM Scalability Studies Model download website: mtj.umn.edu Jongyeon Kim 1, An Chen 2, Behtash Behin-Aein 2, Saurabh Kumar 1,
More informationMicromagnetic simulations of current-induced magnetization switching in Co/ Cu/ Co nanopillars
JOURNAL OF APPLIED PHYSICS 102, 093907 2007 Micromagnetic simulations of current-induced magnetization switching in Co/ Cu/ Co nanopillars Z. H. Xiao, X. Q. Ma, a and P. P. Wu Department of Physics, University
More informationAn Overview of Spin-based Integrated Circuits
ASP-DAC 2014 An Overview of Spin-based Integrated Circuits Wang Kang, Weisheng Zhao, Zhaohao Wang, Jacques-Olivier Klein, Yue Zhang, Djaafar Chabi, Youguang Zhang, Dafiné Ravelosona, and Claude Chappert
More informationPage 1. A portion of this study was supported by NEDO.
MRAM : Materials and Devices Current-induced Domain Wall Motion High-speed MRAM N. Ishiwata NEC Corporation Page 1 A portion of this study was supported by NEDO. Outline Introduction Positioning and direction
More informationFocused-ion-beam milling based nanostencil mask fabrication for spin transfer torque studies. Güntherodt
Focused-ion-beam milling based nanostencil mask fabrication for spin transfer torque studies B. Özyilmaz a, G. Richter, N. Müsgens, M. Fraune, M. Hawraneck, B. Beschoten b, and G. Güntherodt Physikalisches
More informationAuthor : Fabrice BERNARD-GRANGER September 18 th, 2014
Author : September 18 th, 2014 Spintronic Introduction Spintronic Design Flow and Compact Modelling Process Variation and Design Impact Semiconductor Devices Characterisation Seminar 2 Spintronic Introduction
More informationLow-power non-volatile spintronic memory: STT-RAM and beyond
IOP PUBLISHING JOURNAL OF PHYSICS D: APPLIED PHYSICS J. Phys. D: Appl. Phys. 46 (2013) 074003 (10pp) doi:10.1088/0022-3727/46/7/074003 Low-power non-volatile spintronic memory: STT-RAM and beyond K L Wang,
More informationMagnetic Tunnel Junction for Integrated Circuits: Scaling and Beyond
TUTORIAL: APPLIED RESEARCH IN MAGNETISM Magnetic Tunnel Junction for Integrated Circuits: Scaling and Beyond Hideo Ohno 1,2 1 Center for Spintronics Integrated Systems, Tohoku University, Japan 2 Laboratory
More informationMAGNETORESISTANCE PHENOMENA IN MAGNETIC MATERIALS AND DEVICES. J. M. De Teresa
MAGNETORESISTANCE PHENOMENA IN MAGNETIC MATERIALS AND DEVICES J. M. De Teresa Instituto de Ciencia de Materiales de Aragón, Universidad de Zaragoza-CSIC, Facultad de Ciencias, 50009 Zaragoza, Spain. E-mail:
More informationCURRENT-INDUCED MAGNETIC DYNAMICS IN NANOSYSTEMS
CURRENT-INDUCED MAGNETIC DYNAMICS IN NANOSYSTEMS J. Barna Department of Physics Adam Mickiewicz University & Institute of Molecular Physics, Pozna, Poland In collaboration: M Misiorny, I Weymann, AM University,
More informationSpin orbit torque driven magnetic switching and memory. Debanjan Bhowmik
Spin orbit torque driven magnetic switching and memory Debanjan Bhowmik Spin Transfer Torque Fixed Layer Free Layer Fixed Layer Free Layer Current coming out of the fixed layer (F2) is spin polarized in
More informationGMR Read head. Eric Fullerton ECE, CMRR. Introduction to recording Basic GMR sensor Next generation heads TMR, CPP-GMR UCT) Challenges ATE
GMR Read head Eric Fullerton ECE, CMRR Introduction to recording Basic GMR sensor Next generation heads TMR, CPP-GMR UCT) Challenges ATE 1 Product scaling 5 Mbyte 100 Gbyte mobile drive 8 Gbyte UCT) ATE
More informationSolid-State Electronics
Solid-State Electronics 84 (2013) 191 197 Contents lists available at SciVerse ScienceDirect Solid-State Electronics journal homepage: www.elsevier.com/locate/sse Implication logic gates using spin-transfer-torque-operated
More informationFerromagnetism and Electronic Transport. Ordinary magnetoresistance (OMR)
Ferromagnetism and Electronic Transport There are a number of effects that couple magnetization to electrical resistance. These include: Ordinary magnetoresistance (OMR) Anisotropic magnetoresistance (AMR)
More informationGiant Magnetoresistance
Giant Magnetoresistance 03/18/2010 Instructor: Dr. Elbio R. Dagotto Class: Solid State Physics 2 Nozomi Shirato Department of Materials Science and Engineering ntents: Giant Magnetoresistance (GMR) Discovery
More informationNew Approaches to Reducing Energy Consumption of MRAM write cycles, Ultra-high efficient writing (Voltage-Control) Spintronics Memory (VoCSM)
New Approaches to Reducing Energy Consumption of MRAM write cycles, Ultra-high efficient writing (Voltage-Control) Spintronics Memory (VoCSM) Hiroaki Yoda Corporate Research & Development Center, Toshiba
More informationResonance Measurement of Nonlocal Spin Torque in a Three-Terminal Magnetic Device
Resonance Measurement of Nonlocal Spin Torque in a Three-Terminal Magnetic Device Lin Xue 1, Chen Wang 1, Yong-Tao Cui 1, Luqiao Liu 1, A. Swander 1, J. Z. Sun 3, R. A. Buhrman 1 and D. C. Ralph 1,2 1
More informationSystèmes Hybrides. Norman Birge Michigan State University
Systèmes Hybrides Norman Birge Michigan State University Résumé Systèmes F/N Systèmes S/N Systèmes S/F Résumé: Systèmes F/N Accumulation de spin Giant Magnetoresistance (GMR) Spin-transfer torque (STT)
More informationMSE 7025 Magnetic Materials (and Spintronics)
MSE 7025 Magnetic Materials (and Spintronics) Lecture 14: Spin Transfer Torque And the future of spintronics research Chi-Feng Pai cfpai@ntu.edu.tw Course Outline Time Table Week Date Lecture 1 Feb 24
More informationGiant Magnetoresistance
Giant Magnetoresistance N. Shirato urse: Solid State Physics 2, Spring 2010, Instructor: Dr. Elbio Dagotto Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996
More informationFrom Hall Effect to TMR
From Hall Effect to TMR 1 Abstract This paper compares the century old Hall effect technology to xmr technologies, specifically TMR (Tunnel Magneto-Resistance) from Crocus Technology. It covers the various
More informationarxiv:cond-mat/ v1 4 Oct 2002
Current induced spin wave excitations in a single ferromagnetic layer Y. Ji and C. L. Chien Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland arxiv:cond-mat/0210116v1
More informationSpin-transfer-torque efficiency enhanced by edge-damage. of perpendicular magnetic random access memories
Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories Kyungmi Song 1 and Kyung-Jin Lee 1,2,* 1 KU-KIST Graduate School of Converging Science and Technology,
More informationEmbedded MRAM Technology For logic VLSI Application
2011 11th Non-Volatile Memory Technology Symposium Embedded MRAM Technology For logic VLSI Application November 7, 2011 Naoki Kasai 1, Shoji Ikeda 1,2, Takahiro Hanyu 1,3, Tetsuo Endoh 1,4, and Hideo Ohno
More informationPutting the Electron s Spin to Work Dan Ralph Kavli Institute at Cornell Cornell University
Putting the Electron s Spin to Work Dan Ralph Kavli Institute at Cornell Cornell University Yongtao Cui, Ted Gudmundsen, Colin Heikes, Wan Li, Alex Mellnik, Takahiro Moriyama, Joshua Parks, Sufei Shi,
More informationMagnetoresistance and Spin-Transfer Torque in Magnetic Tunnel Junctions. J. Z. Sun 1 and D. C. Ralph , USA. Abstract:
Magnetoresistance and Spin-Transfer Torque in Magnetic Tunnel Junctions J. Z. Sun 1 and D. C. Ralph 2 1 IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA 2 Laboratory of Atomic and
More informationGate voltage modulation of spin-hall-torque-driven magnetic switching. Cornell University, Ithaca, NY 14853
Gate voltage modulation of spin-hall-torque-driven magnetic switching Luqiao Liu 1, Chi-Feng Pai 1, D. C. Ralph 1,2 and R. A. Buhrman 1 1 Cornell University, Ithaca, NY 14853 2 Kavli Institute at Cornell,
More informationSPICE Modeling of STT-RAM for Resilient Design. Zihan Xu, Ketul Sutaria, Chengen Yang, Chaitali Chakrabarti, Yu (Kevin) Cao School of ECEE, ASU
SPICE odeling of STT-RA for Resilient Design Zihan Xu, Ketul Sutaria, Chengen Yang, Chaitali Chakrabarti, Yu (Kevin) Cao School of ECEE, ASU OUTLINE - 2 - Heterogeneous emory Design A Promising Candidate:
More informationarxiv: v1 [cond-mat.mtrl-sci] 5 Oct 2018
Applied Physics Express Zero-field dynamics stabilized by in-plane shape anisotropy in MgO-based spin-torque oscillators Ewa Kowalska,, Attila Kákay, Ciarán Fowley, Volker Sluka, Jürgen Lindner, Jürgen
More informationMagnetic Tunnel Junction for Integrated Circuits: Scaling and Beyond
TUTORIAL: APPLIED RESEARCH IN MAGNETISM Magnetic Tunnel Junction for Integrated Circuits: Scaling and Beyond Hideo Ohno 1,2 1 Center for Spintronics Integrated Systems, Tohoku University, Japan 2 Laboratory
More informationAdvanced Lab Course. Tunneling Magneto Resistance
Advanced Lab Course Tunneling Magneto Resistance M06 As of: 015-04-01 Aim: Measurement of tunneling magnetoresistance for different sample sizes and recording the TMR in dependency on the voltage. Content
More informationShape anisotropy revisited in single-digit
Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions K. Watanabe 1, B. Jinnai 2, S. Fukami 1,2,3,4*, H. Sato 1,2,3,4, and H. Ohno 1,2,3,4,5 1 Laboratory for Nanoelectronics and
More informationEnhanced spin orbit torques by oxygen incorporation in tungsten films
Enhanced spin orbit torques by oxygen incorporation in tungsten films Timothy Phung IBM Almaden Research Center, San Jose, California, USA 1 Motivation: Memory devices based on spin currents Spin Transfer
More informationIEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 63, NO. 11, NOVEMBER
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 63, NO. 11, NOVEMBER 2016 4499 All-Spin-Orbit Switching of Perpendicular Magnetization Mohammad Kazemi, Student Member, IEEE, Graham E. Rowlands, Shengjie Shi,
More informationCompact Modeling of STT-RAM and MeRAM A Verilog-A model of Magnetic Tunnel Junction Behavioral Dynamics
UNIVERSITY OF CALIFORNIA, LOS ANGELES Compact Modeling of STT-RAM and MeRAM A Verilog-A model of Magnetic Tunnel Junction Behavioral Dynamics Dheeraj Srinivasan 3/8/2013 +This work was done under the advisement
More informationNanoelectronics 12. Atsufumi Hirohata Department of Electronics. Quick Review over the Last Lecture
Nanoelectronics 12 Atsufumi Hirohata Department of Electronics 09:00 Tuesday, 20/February/2018 (P/T 005) Quick Review over the Last Lecture Origin of magnetism : ( Circular current ) is equivalent to a
More informationControl of Spins in a Nano-sized Magnet Using Electric-current and Voltage
FERURY 2015 vol. 25 no. 1 feature articles Control of Spins in a Nano-sized Magnet Using Electric-current and Voltage Y. SUZUKI 1, 2, 3, 4, S. MIW 1, 3, T. NOZKI 2, 3, Y. SHIOT 2, 3 1 GRDUTE SCHOOL OF
More informationCurrent-driven ferromagnetic resonance, mechanical torques and rotary motion in magnetic nanostructures
Current-driven ferromagnetic resonance, mechanical torques and rotary motion in magnetic nanostructures Alexey A. Kovalev Collaborators: errit E.W. Bauer Arne Brataas Jairo Sinova In the first part of
More informationOptical studies of current-induced magnetization
Optical studies of current-induced magnetization Virginia (Gina) Lorenz Department of Physics, University of Illinois at Urbana-Champaign PHYS403, December 5, 2017 The scaling of electronics John Bardeen,
More informationMon., Feb. 04 & Wed., Feb. 06, A few more instructive slides related to GMR and GMR sensors
Mon., Feb. 04 & Wed., Feb. 06, 2013 A few more instructive slides related to GMR and GMR sensors Oscillating sign of Interlayer Exchange Coupling between two FM films separated by Ruthenium spacers of
More informationintroduction: what is spin-electronics?
Spin-dependent transport in layered magnetic metals Patrick Bruno Max-Planck-Institut für Mikrostrukturphysik, Halle, Germany Summary: introduction: what is spin-electronics giant magnetoresistance (GMR)
More informationarxiv: v1 [cond-mat.mes-hall] 2 Dec 2013
Critical Field of Spin Torque Oscillator with Perpendicularly Magnetized Free Layer Tomohiro Taniguchi, Hiroko Arai, Sumito Tsunegi, Shingo Tamaru, Hitoshi Kubota, and Hiroshi Imamura National Institute
More informationGiant Magnetoresistance
Giant Magnetoresistance This is a phenomenon that produces a large change in the resistance of certain materials as a magnetic field is applied. It is described as Giant because the observed effect is
More informationSpin-torque nano-oscillators trends and challenging
Domain Microstructure and Dynamics in Magnetic Elements Heraklion, Crete, April 8 11, 2013 Spin-torque nano-oscillators trends and challenging N H ext S Giovanni Finocchio Department of Electronic Engineering,
More informationIntroduction to Spintronics and Spin Caloritronics. Tamara Nunner Freie Universität Berlin
Introduction to Spintronics and Spin Caloritronics Tamara Nunner Freie Universität Berlin Outline Format of seminar How to give a presentation How to search for scientific literature Introduction to spintronics
More informationMagnetic Race- Track Memory: Current Induced Domain Wall Motion!
Magnetic Race- Track Memory: Current Induced Domain Wall Motion! Stuart Parkin IBM Fellow IBM Almaden Research Center San Jose, California parkin@almaden.ibm.com Digital data storage Two main types of
More informationGiant Magnetoresistance in Magnetic Recording
Celebrating 20 Years of GMR Past, Present, and Future (II) Giant Magnetoresistance in Magnetic Recording Bruce A. Gurney Manager, Advanced Recording Head Concepts, San Jose Research Center, Hitachi Global
More informationTwo-terminal spin orbit torque magnetoresistive random access memory
Two-terminal spin orbit torque magnetoresistive random access memory Noriyuki Sato 1, Fen Xue 1,3, Robert M. White 1,2, Chong Bi 1, and Shan X. Wang 1,2,* 1 Stanford University, Department of Electrical
More informationMagneto-Seebeck effect in spin-valve with in-plane thermal gradient
Magneto-Seebeck effect in spin-valve with in-plane thermal gradient S. Jain 1, a), D. D. Lam 2, b), A. Bose 1, c), H. Sharma 3, d), V. R. Palkar 1, e), C. V. Tomy 3, f), Y. Suzuki 2, g) 1, h) and A. A.
More informationCreating non-volatile electronics by spintronics technology
Research paper Creating non-volatile electronics by spintronics technology - Toward developing ultimate green IT devices - Shinji Yuasa *, Hitoshi Kubota, Akio Fukushima, Kay Yakushiji, Taro Nagahama,
More informationRoom-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered Bi x Se (1-x) topological insulator material
Room-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered Bi x Se (1-x) topological insulator material Mahendra DC 1, Mahdi Jamali 2, Jun-Yang Chen 2, Danielle
More informationAdvanced Flash and Nano-Floating Gate Memories
Advanced Flash and Nano-Floating Gate Memories Mater. Res. Soc. Symp. Proc. Vol. 1337 2011 Materials Research Society DOI: 10.1557/opl.2011.1028 Scaling Challenges for NAND and Replacement Memory Technology
More informationSpin transfer torque devices utilizing the giant spin Hall effect of tungsten
Spin transfer torque devices utilizing the giant spin Hall effect of tungsten Chi-Feng Pai, 1,a) Luqiao Liu, 1 Y. Li, 1 H. W. Tseng, 1 D. C. Ralph 1,2 and R. A. Buhrman 1 1 Cornell University, Ithaca,
More informationTHere is currently tremendous interest in spintronic devices
Scaling Projections on Spin Transfer Torque Magnetic Tunnel Junctions Debasis Das, Ashwin Tulapurkar and Bhaskaran Muralidharan 1 arxiv:1712.04235v1 [cond-mat.mes-hall] 12 Dec 2017 Abstract We investigate
More informationMagnetic memories: from magnetic storage to MRAM and magnetic logic
Magnetic memories: from magnetic storage to MRAM and magnetic logic WIND Claude CHAPPERT, CNRS Département "Nanospintronique" Institut d'electronique Fondamentale Université Paris Sud, Orsay, FRANCE chappert@u-psud.fr
More informationField dependence of magnetization reversal by spin transfer
PHYSICAL REVIEW B 67, 17440 003 Field dependence of magnetization reversal by spin transfer J. Grollier, 1 V. Cros, 1 H. Jaffrès, 1 A. Hamzic, 1, * J. M. George, 1 G. Faini, J. Ben Youssef, 3 H. Le Gall,
More informationStrong linewidth variation for spin-torque nano-oscillators as a function of in-plane magnetic field angle
Strong linewidth variation for spin-torque nano-oscillators as a function of in-plane magnetic field angle K. V. Thadani, 1 G. Finocchio, 2 Z.-P. Li, 1 O. Ozatay, 1 J. C. Sankey, 1 I. N. Krivorotov, 3
More informationMTJ-Based Nonvolatile Logic-in-Memory Architecture and Its Application
2011 11th Non-Volatile Memory Technology Symposium @ Shanghai, China, Nov. 9, 20112 MTJ-Based Nonvolatile Logic-in-Memory Architecture and Its Application Takahiro Hanyu 1,3, S. Matsunaga 1, D. Suzuki
More informationSpin-orbit torque in Pt/CoNiCo/Pt symmetric devices
Spin-orbit torque in Pt/CoNiCo/Pt symmetric devices Meiyin Yang 1, Kaiming Cai 1, Hailang Ju 2, Kevin William Edmonds 3, Guang Yang 4, Shuai Liu 2, Baohe Li 2, Bao Zhang 1, Yu Sheng 1, ShouguoWang 4, Yang
More informationTransition from the macrospin to chaotic behaviour by a spin-torque driven magnetization precession of a square nanoelement
Transition from the macrospin to chaotic behaviour by a spin-torque driven magnetization precession of a square nanoelement D. Berkov, N. Gorn Innovent e.v., Prüssingstr. 27B, D-07745, Jena, Germany (Dated:
More informationNOVEL GIANT MAGNETORESISTANCE MODEL USING MULTIPLE BARRIER POTENTIAL
NOVEL GIANT MAGNETORESISTANCE MODEL USING MULTIPLE BARRIER POTENTIAL Christian Fredy Naa, Suprijadi, Sparisoma Viridi and Mitra Djamal Department of Physics, Faculty of Mathematics and Natural Science,
More informationAN ABSTRACT OF THE THESIS OF
AN ABSTRACT OF THE THESIS OF Linda Engelbrecht for the degree of Doctor of Philosophy in Electrical and Computer Engineering presented on March 18, 2011. Title: Modeling Spintronics Devices in Verilog-A
More informationFabrication and Measurement of Spin Devices. Purdue Birck Presentation
Fabrication and Measurement of Spin Devices Zhihong Chen School of Electrical and Computer Engineering Birck Nanotechnology Center, Discovery Park Purdue University Purdue Birck Presentation zhchen@purdue.edu
More informationFundamental concepts of spintronics
Fundamental concepts of spintronics Jaroslav Fabian Institute for Theoretical Physics University of Regensburg Stara Lesna, 24. 8. 2008 SFB 689 :outline: what is spintronics? spin injection spin-orbit
More informationInfluence of exchange bias on magnetic losses in CoFeB/MgO/CoFeB tunnel junctions
Influence of exchange bias on magnetic losses in CoFeB/MgO/CoFeB tunnel junctions Ryan Stearrett Ryan Stearrett, W. G. Wang, Xiaoming Kou, J. F. Feng, J. M. D. Coey, J. Q. Xiao, and E. R. Nowak, Physical
More informationThe exchange interaction between FM and AFM materials
Chapter 1 The exchange interaction between FM and AFM materials When the ferromagnetic (FM) materials are contacted with antiferromagnetic (AFM) materials, the magnetic properties of FM materials are drastically
More informationA simple vision of current induced spin torque in domain walls
A simple vision of current induced spin torque in domain walls A. Vanhaverbeke and M. Viret Service de physique de l état condensé (CNRS URA 464), CEA Saclay F-91191 Gif-sur-Yvette cedex, France (Dated:
More information01 Development of Hard Disk Drives
01 Development of Hard Disk Drives Design Write / read operation MR / GMR heads Longitudinal / perpendicular recording Recording media Bit size Areal density Tri-lemma 11:00 10/February/2016 Wednesday
More informationSUPPLEMENTARY INFORMATION
SUPPLEMENTARY INFORMATION doi:10.1038/nature11733 1 Ising-Macrospin model The Ising-Macrospin (IM) model simulates the configuration of the superlattice (SL) by assuming every layer is a single spin (macrospin)
More informationCHAPTER 2 MAGNETISM. 2.1 Magnetic materials
CHAPTER 2 MAGNETISM Magnetism plays a crucial role in the development of memories for mass storage, and in sensors to name a few. Spintronics is an integration of the magnetic material with semiconductor
More informationGiant Magnetoresistance
GENERAL ARTICLE Giant Magnetoresistance Nobel Prize in Physics 2007 Debakanta Samal and P S Anil Kumar The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg for the discovery of
More information