S. Mangin 1, Y. Henry 2, D. Ravelosona 3, J.A. Katine 4, and S. Moyerman 5, I. Tudosa 5, E. E. Fullerton 5
|
|
- Marcus Cooper
- 6 years ago
- Views:
Transcription
1 Spin transfer torques in high anisotropy magnetic nanostructures S. Mangin 1, Y. enry 2, D. Ravelosona 3, J.A. Katine 4, and S. Moyerman 5, I. Tudosa 5, E. E. Fullerton 5 1) Laboratoire de Physique des Matériaux Vandoeuvre-les-Nancy 2) Institut de Physique et chimie des Matériaux de Strasbourg 3) Institut d'electronique Fondamentale - Orsay 4) itachi GST San Jose research center - San Jose 5) University of California, San Diego
2 Spin transfer torques in high anisotropy magnetic nanostructures Motivation Co/Ni multilayers 2 layer results ( - ) switching currents angular dependence (SW astroid) Conclusions
3 Spin transfer torques in heterostructures Γ p Angular momentum conservation spin transfer torques m Γ = m d e L dt see J. Magn. Magn. Mater. 32 (28) articles on spin torque edited by M. Stiles and D. Ralph I
4 Spin torque dynamics (LLG) dm dt = γ m Field torque (precession) + α m dm dt Damping torque (dissipation) eff m IPg i μ em t s B ( ( )) m x m x p Spin torque (negative friction ) J. Slonczewski, J. Magn. Magn. Mater. 159, L1 (1996) L. Berger, Phys. Rev. B 54, 9353 (1996) I α C eff
5 Spin transfer torque nanotechnologies Noise in read heads STT MRAM Bit Line MTJ Source Gate Drain Oscillators Domain wall devices MTJ e- e- MTJ 1 Rippard et al., PRL 92, 2721 (24) Chappert, Fert, and Van Dau, Nature Mater. 6, 813 (27). Katine and Fullerton, J. Magn. Magn. Mater. 32, 1217 (28). Parkin et al., Science 32, 19 (28).
6 Perpendicular anisotropy devices Less sensitive to structure/lithography igher thermal stability More efficient reversal igher frequency oscillations Narrow domain walls New functionality e- Mangin et al., Nature Mater. 5, 21 (26) e- Burrowes et al., APL 93, (28). Mihai et al, Nature Phys. (in press)
7 Stability analysis of the LLG equations F1 F2 e- in-plane magnetization Demagnetization field suppresses out-of-plane precessions I C 2e h αm g S ( θ ) V p ( + + 2πM ) dip + K // : in-plane applied fied, dip : dipole field, k// in-plane anisotropy field S Stability U K = M S V K// / 2 Critical current must overcome 2πM S ~ 5-1 koe
8 Stability analysis of the LLG equations F1 e- out-of-plane magnetization ( K > 4πM S ) F2 K,eff I C 2e h αm g S ( θ ) V p k out of plane anisotropy field ( + + 4πM ) dip K S U = K ( M V )/ 2 S K,eff
9 Stability analysis of the LLG equations F1 e- out-of-plane magnetization ( K > 4πM S ) F2 I C 2e h g 2α θ U ( ) K p Zero applied field Critical current directly proportional to thermal stability More efficient reversal assuming low α and high p
10 Magnetic layers Films grown on 5 inch Si wafers by e-beam and sputtering (111) - Co(1Å)/Ni(6Å) Pd or Pt [Co/Ni]x4 Cu [Co/Ni]x2 [Co/Pd] or [Co/Pt] Pt K u 4x1 6 erg/cm 3 M s = 65 emu/cm 3 Normalized Kerr signal (daalderop et al, Phys. Rev. Lett 68 (1992)) (koe) C1 =.7 koe C2 = 2.7 koe
11 Co/Ni multilayers MBE grown (111) - Co(X)/Ni(3 ML) REED Intensity (a.u) Time (s) Co / Ni(111) T cell =147 C K 1 (1 5 J/m 3 ) 1 5 Magnetometry) FMR Co thickness (ML) S. Girod et al., Appl. Phys. Lett. 94, (29)
12 Nanopillars fabrication - Use of negative SQ resist as a high fidelity mask - 1 devices/5 inch wafer: circles and hexagons from 45nm to 15nm Au 1 nm Au I< Ta Cu Pt [Co/Ni]x4 Cu [Co/Ni]x2 [Co/Pt]x4 Pt > Ta (5 nm) Cu (15nm) Pt (3nm) [Co/Ni] (3 nm) Cu (4nm) [Co/Pt]/[Co/Ni] (4nm Pt (3nm) Cu Ta Cu (35nm) 5-1 nm 1-2 nm 45 nm Ta (5 nm)
13 Field switching in 5x1nm 2 nanopillars dv/di (Ohms) AP a) P c free = 2.65 koe c ref = 1 koe d = 65 Oe (koe)
14 Current induced switching in 5x1nm 2 nanopillars dv/di (Ohms) dv/di (Ohms) AP (koe) a) P b) AP P c free = 2.65 koe c ref = 1 koe d = 65 Oe I C AP-P = -2.6x1 7 A/cm 2 I C P-AP = 7x1 7 A/cm 2 I c (Co/Pt) 4xI c (Co/Ni) I B (ma) Mangin et al., Nature Materials 5, 21 (26) Ravelosona et al., Phys. Rev. Lett. 96, (26)
15 Lower anisotropy free layer nm circle dv/di (ohms) Pt [Co/Ni]x4 Cu [Co/Ni]x2 [Co/Pt]x4 Pt (Oe) dv/di (ohms) c ~ 4 Oe d ~ 8 Oe I C ~11 μa 6x1 6 A/cm I (ma) (Oe)
16 Critical currents I C 2e h g 2α θ U ( ) K p sample 1 sample 2 ratio I C (ma) V (1-18 cm 3 ) C (Oe) Mangin et al., Appl. Phys. Lett. 94, 1252 (29)
17 AF-coupled pinned layer 7.4 Resistance R ac (Ohms) CoNix2/CoPd Cu CoPdx2/CoNix2 Ru CoPdx4-4.k -2.k. 2.k 4.k Magnetic Field (Oe)
18 AF-coupled pinned layer 7.4 Resistance R ac (Ohms) major loop AF layer free layer.5 koe CoNix2/CoPd Cu CoPdx2/CoNix2 Ru CoPdx4-4.k -2.k. 2.k 4.k Magnetic Field (Oe) 2.5 koe
19 Stoner-Wohlfarth astroid M 1 M θ SW K = ( 2/3 2/3 sin θ + cos θ ) K / 2 easy axis 33 3 hard axis K
20 Angle-dependent field switching 1x2nm 2 I θ P dv/di (Ω) AP (T) (T) enry et al., Phys. Rev. B, 79, (29).
21 4 Comparison theory-experiment experiment I=+3mA I=+4.5mA I=+6mA I=+9mA z (mt) y (mt) Field torque Damping torque Spin torque dm dt = γ m eff +α ( m m ) eff ( m m ) + β I u z
22 4 Comparison theory-experiment experiment I=+3mA I=+4.5mA I=+6mA I=+9mA z (mt) z (mt) I= y (mt) J.Z. Sun, PRB 62, 56 (2). y (mt)
23 Angular dependence of the spin torque Current has large effect // K +2 x 1 7 A/cm 2 K Threshold current for K I onset α eff on the SW astroid eff = K sin 2 (θ M ) 18 Y. enry et al., Phys. Rev. B, 79, (29).
24 r m t where r r r * r m = γ ( m eff ) + α m t r * eff Analytic solution r β = eff + I γ m r * r Equilibrium conditions: magnetization parallel to r r ( m z) eff x z θ m ϕ e r θ y e r ϕ Stability condition: total damping positive Linear stability analysis in the small current limit (2D problem) θ r [ αγ ( e ) β I sin θ] eff r θ θ=θ N. Smith et al, IEEE Trans Mag. 41,2935 (25) Y. enry et al., Phys. Rev. B, 79, (29).
25 Analytic expression for the astroid h h y z = sinθ [sin = cosθ [cos 2 2 θ θ C( θ )] + C( θ )] with C( θ ) = 1 αγ K ( β I sin θ ) θ θ=θ 1 Analytical Numerical Z / K y / K in the small current limit
26 Conclusions Demonstration of efficient spin transfer in Nano-pillars with perpendicular anisotropy I c scales with thermal stability (Co/Ni multilayers: : higher p and lower α compared to Co/Pt) Role of current on the SW astroid. Mangin et al., Nature Materials 5, 21 (26) Ravelosona et al., Phys. Rev. Lett. 96, (26) Mangin et al., Appl. Phys. Lett. 94, 1252 (29) Cucchiara et al., Appl. Phys. Lett. 94, 1253 (29) enry et al., Phys. Rev. B, 79, (29). S. Girod, et al, Appl. Phys. Lett. 94, (29).
A brief history with Ivan. Happy Birthday Ivan. You are now closer to 70!
A brief history with Ivan Happy Birthday Ivan You are now closer to 70! My brief history with Ivan 1986: I was a graduate student at UCSD, without a thesis advisor and not sure what I was going to do.
More informationSPIN TRANSFER TORQUES IN HIGH ANISOTROPY MAGNETIC NANOSTRUCTURES
CRR Report Number 29, Winter 2008 SPIN TRANSFER TORQUES IN HIGH ANISOTROPY AGNETIC NANOSTRUCTURES Eric Fullerton 1, Jordan Katine 2, Stephane angin 3, Yves Henry 4, Dafine Ravelosona 5, 1 University of
More informationMSE 7025 Magnetic Materials (and Spintronics)
MSE 7025 Magnetic Materials (and Spintronics) Lecture 14: Spin Transfer Torque And the future of spintronics research Chi-Feng Pai cfpai@ntu.edu.tw Course Outline Time Table Week Date Lecture 1 Feb 24
More informationAnisotropy Distributions in Patterned Magnetic Media
MINT Review & Workshop 24-25 Oct. 2006 Anisotropy Distributions in Patterned Magnetic Media Tom Thomson Hitachi San Jose Research Center Page 1 Acknowledgements Manfred Albrecht (Post-doc) Tom Albrecht
More informationSpin Torque and Magnetic Tunnel Junctions
Spin Torque and Magnetic Tunnel Junctions Ed Myers, Frank Albert, Ilya Krivorotov, Sergey Kiselev, Nathan Emley, Patrick Braganca, Greg Fuchs, Andrei Garcia, Ozhan Ozatay, Eric Ryan, Jack Sankey, John
More informationEnhanced spin orbit torques by oxygen incorporation in tungsten films
Enhanced spin orbit torques by oxygen incorporation in tungsten films Timothy Phung IBM Almaden Research Center, San Jose, California, USA 1 Motivation: Memory devices based on spin currents Spin Transfer
More informationMicrowave Assisted Magnetic Recording
Microwave Assisted Magnetic Recording, Xiaochun Zhu, and Yuhui Tang Data Storage Systems Center Dept. of Electrical and Computer Engineering Carnegie Mellon University IDEMA Dec. 6, 27 Outline Microwave
More informationFocused-ion-beam milling based nanostencil mask fabrication for spin transfer torque studies. Güntherodt
Focused-ion-beam milling based nanostencil mask fabrication for spin transfer torque studies B. Özyilmaz a, G. Richter, N. Müsgens, M. Fraune, M. Hawraneck, B. Beschoten b, and G. Güntherodt Physikalisches
More informationSpin-torque nano-oscillators trends and challenging
Domain Microstructure and Dynamics in Magnetic Elements Heraklion, Crete, April 8 11, 2013 Spin-torque nano-oscillators trends and challenging N H ext S Giovanni Finocchio Department of Electronic Engineering,
More informationSUPPLEMENTARY INFORMATION
SUPPLEMENTARY INFORMATION doi:.38/nphys436 Non-adiabatic spin-torques in narrow magnetic domain walls C. Burrowes,2, A. P. Mihai 3,4, D. Ravelosona,2, J.-V. Kim,2, C. Chappert,2, L. Vila 3,4, A. Marty
More informationGMR Read head. Eric Fullerton ECE, CMRR. Introduction to recording Basic GMR sensor Next generation heads TMR, CPP-GMR UCT) Challenges ATE
GMR Read head Eric Fullerton ECE, CMRR Introduction to recording Basic GMR sensor Next generation heads TMR, CPP-GMR UCT) Challenges ATE 1 Product scaling 5 Mbyte 100 Gbyte mobile drive 8 Gbyte UCT) ATE
More informationarxiv:cond-mat/ v1 4 Oct 2002
Current induced spin wave excitations in a single ferromagnetic layer Y. Ji and C. L. Chien Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland arxiv:cond-mat/0210116v1
More informationBits of the Future: Emergent Physics for Advanced Magnetic Information Technologies
Bits of the Future: Emergent Physics for Advanced Magnetic Information Technologies Eric E. Fullerton Center for Magnetic Recording Research University of California, San Diego 1 Bits of the Future: Emergent
More informationEnhancement in spin-torque efficiency by nonuniform spin current generated within a tapered nanopillar spin valve
Enhancement in spin-torque efficiency by nonuniform spin current generated within a tapered nanopillar spin valve P. M. Braganca,* O. Ozatay, A. G. F. Garcia, O. J. Lee, D. C. Ralph, and R. A. Buhrman
More informationMicromagnetic simulations of current-induced magnetization switching in Co/ Cu/ Co nanopillars
JOURNAL OF APPLIED PHYSICS 102, 093907 2007 Micromagnetic simulations of current-induced magnetization switching in Co/ Cu/ Co nanopillars Z. H. Xiao, X. Q. Ma, a and P. P. Wu Department of Physics, University
More informationSupplementary material for : Spindomain-wall transfer induced domain. perpendicular current injection. 1 ave A. Fresnel, Palaiseau, France
SUPPLEMENTARY INFORMATION Vertical-current-induced Supplementary material for : Spindomain-wall transfer induced domain motion wallin MgO-based motion in MgO-based magnetic magnetic tunnel tunneljunctions
More informationMagnetic domain theory in dynamics
Chapter 3 Magnetic domain theory in dynamics Microscale magnetization reversal dynamics is one of the hot issues, because of a great demand for fast response and high density data storage devices, for
More informationIEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 63, NO. 11, NOVEMBER
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 63, NO. 11, NOVEMBER 2016 4499 All-Spin-Orbit Switching of Perpendicular Magnetization Mohammad Kazemi, Student Member, IEEE, Graham E. Rowlands, Shengjie Shi,
More informationPage 1. A portion of this study was supported by NEDO.
MRAM : Materials and Devices Current-induced Domain Wall Motion High-speed MRAM N. Ishiwata NEC Corporation Page 1 A portion of this study was supported by NEDO. Outline Introduction Positioning and direction
More informationSpin-transfer-torque efficiency enhanced by edge-damage. of perpendicular magnetic random access memories
Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories Kyungmi Song 1 and Kyung-Jin Lee 1,2,* 1 KU-KIST Graduate School of Converging Science and Technology,
More informationSpin dynamics in Bi 2 Se 3 /ferromagnet heterostructures
Spin dynamics in Bi 2 Se 3 /ferromagnet heterostructures Hyunsoo Yang Electrical and Computer Engineering, National University of Singapore eleyang@nus.edu.sg Outline Spin-orbit torque (SOT) engineering
More informationLarge-amplitude coherent spin waves excited by spin-polarized current in nanoscale spin valves
Large-amplitude coherent spin waves excited by spin-polarized current in nanoscale spin valves I. N. Krivorotov Department of Physics and Astronomy, University of California, Irvine, California 92697-4575,
More informationarxiv: v1 [cond-mat.mtrl-sci] 28 Jul 2008
Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers Patryk Krzysteczko, 1, Xinli Kou, 2 Karsten Rott, 1 Andy Thomas, 1 and Günter Reiss 1 1 Bielefeld University,
More informationANGULAR DEPENDENCE OF MAGNETIC PROPERTIES IN Co/Pt MULTILAYERS WITH PERPENDICULAR MAGNETIC ANISOTROPY
International Journal of Modern Physics B Vol. 19, Nos. 15, 16 & 17 (2005) 2562-2567 World Scientific Publishing Company World Scientific V www.worldscientific.com ANGULAR DEPENDENCE OF MAGNETIC PROPERTIES
More informationSpin-transfer switching and thermal stability in an FePt/Au/FePt nanopillar prepared by alternate monatomic layer deposition
Spin-transfer switching and thermal stability in an FePt/Au/FePt nanopillar prepared by alternate monatomic layer deposition Kay Yakushiji, Shinji Yuasa, Taro Nagahama, Akio Fukushima, Hitoshi Kubota,
More informationTime resolved transport studies of magnetization reversal in orthogonal spin transfer magnetic tunnel junction devices
Invited Paper Time resolved transport studies of magnetization reversal in orthogonal spin transfer magnetic tunnel junction devices Georg Wolf a, Gabriel Chaves-O Flynn a, Andrew D. Kent a, Bartek Kardasz
More informationMagnetic oscillations driven by the spin Hall effect in 3-terminal magnetic tunnel junction. devices. Cornell University, Ithaca, NY 14853
Magnetic oscillations driven by the spin Hall ect in 3-terminal magnetic tunnel junction devices Luqiao Liu 1, Chi-Feng Pai 1, D. C. Ralph 1,2, R. A. Buhrman 1 1 Cornell University, Ithaca, NY 14853 2
More informationarxiv: v1 [cond-mat.mtrl-sci] 5 Oct 2018
Applied Physics Express Zero-field dynamics stabilized by in-plane shape anisotropy in MgO-based spin-torque oscillators Ewa Kowalska,, Attila Kákay, Ciarán Fowley, Volker Sluka, Jürgen Lindner, Jürgen
More informationRoom-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered Bi x Se (1-x) topological insulator material
Room-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered Bi x Se (1-x) topological insulator material Mahendra DC 1, Mahdi Jamali 2, Jun-Yang Chen 2, Danielle
More informationInfluence of Size on the Properties of Materials
Influence of Size on the Properties of Materials M. J. O Shea Kansas State University mjoshea@phys.ksu.edu If you cannot get the papers connected to this work, please e-mail me for a copy 1. General Introduction
More informationMesoscopic Spintronics
Mesoscopic Spintronics Taro WAKAMURA (Université Paris-Sud) Lecture 1 Today s Topics 1.1 History of Spintronics 1.2 Fudamentals in Spintronics Spin-dependent transport GMR and TMR effect Spin injection
More informationLarge-amplitude coherent spin waves exited by spin-polarized current in nanoscale spin valves
Large-amplitude coherent spin waves exited by spin-polarized current in nanoscale spin valves I. N. Krivorotov Department of Physics and Astronomy, University of California, Irvine, CA 92697-4575 D. V.
More informationLow Energy Spin Transfer Torque RAM (STT-RAM / SPRAM) Zach Foresta April 23, 2009
Low Energy Spin Transfer Torque RAM (STT-RAM / SPRAM) Zach Foresta April 23, 2009 Overview Background A brief history GMR and why it occurs TMR structure What is spin transfer? A novel device A future
More informationSpin transfer torque devices utilizing the giant spin Hall effect of tungsten
Spin transfer torque devices utilizing the giant spin Hall effect of tungsten Chi-Feng Pai, 1,a) Luqiao Liu, 1 Y. Li, 1 H. W. Tseng, 1 D. C. Ralph 1,2 and R. A. Buhrman 1 1 Cornell University, Ithaca,
More informationField dependence of magnetization reversal by spin transfer
PHYSICAL REVIEW B 67, 17440 003 Field dependence of magnetization reversal by spin transfer J. Grollier, 1 V. Cros, 1 H. Jaffrès, 1 A. Hamzic, 1, * J. M. George, 1 G. Faini, J. Ben Youssef, 3 H. Le Gall,
More informationSpin-orbit torque in Pt/CoNiCo/Pt symmetric devices
Spin-orbit torque in Pt/CoNiCo/Pt symmetric devices Meiyin Yang 1, Kaiming Cai 1, Hailang Ju 2, Kevin William Edmonds 3, Guang Yang 4, Shuai Liu 2, Baohe Li 2, Bao Zhang 1, Yu Sheng 1, ShouguoWang 4, Yang
More informationNon-uniform switching of the perpendicular magnetization in a spin-torque driven magnetic nanopillar
SLAC-PUB-14453 Non-uniform switching of the perpendicular magnetization in a spin-torque driven magnetic nanopillar David P. Bernstein, Björn Bräuer, Roopali Kukreja, and Joachim Stöhr Stanford Institute
More information7. Basics of Magnetization Switching
Beyond CMOS computing 7. Basics of Magnetization Switching Dmitri Nikonov Dmitri.e.nikonov@intel.com 1 Outline Energies in a nanomagnet Precession in a magnetic field Anisotropies in a nanomagnet Hysteresis
More informationSwitching Properties in Magnetic Tunnel Junctions with Interfacial Perpendicular Anisotropy: Micromagnetic Study
1 Switching Properties in Magnetic Tunnel Junctions with Interfacial Perpendicular Anisotropy: Micromagnetic Study R. Tomasello 1, V. Puliafito 2, B. Azzerboni 2, G. Finocchio 2 1 Department of Computer
More informationCURRENT-INDUCED MAGNETIC DYNAMICS IN NANOSYSTEMS
CURRENT-INDUCED MAGNETIC DYNAMICS IN NANOSYSTEMS J. Barna Department of Physics Adam Mickiewicz University & Institute of Molecular Physics, Pozna, Poland In collaboration: M Misiorny, I Weymann, AM University,
More informationHigh-frequency measurements of spin-valve films and devices invited
JOURNAL OF APPLIED PHYSICS VOLUME 93, NUMBER 10 15 MAY 003 High-frequency measurements of spin-valve films and devices invited Shehzaad Kaka, John P. Nibarger, and Stephen E. Russek a) National Institute
More informationSUPPLEMENTARY INFORMATION
Engineered materials for all-optical helicity-dependent magnetic switching S. Mangin 1,2, M. Gottwald 1, C-H. Lambert 1,2, D. Steil 3, V. Uhlíř 1, L. Pang 4, M. Hehn 2, S. Alebrand 3, M. Cinchetti 3, G.
More informationTorque magnetometry of perpendicular anisotropy exchange spring heterostructures
Torque magnetometry of perpendicular anisotropy exchange spring heterostructures P. Vallobra 1, T. Hauet 1, F. Montaigne 1, E.G Shipton 2, E.E. Fullerton 2, S. Mangin 1 1. Institut Jean Lamour, UMR 7198
More informationarxiv: v1 [cond-mat.mes-hall] 2 Dec 2013
Critical Field of Spin Torque Oscillator with Perpendicularly Magnetized Free Layer Tomohiro Taniguchi, Hiroko Arai, Sumito Tsunegi, Shingo Tamaru, Hitoshi Kubota, and Hiroshi Imamura National Institute
More informationCurrent-induced Domain Wall Dynamics
Current-induced Domain Wall Dynamics M. Kläui, Fachbereich Physik & Zukunftskolleg Universität Konstanz Konstanz, Germany Starting Independent Researcher Grant Motivation: Physics & Applications Head-to-head
More information9. Spin Torque Majority Gate
eyond MOS computing 9. Spin Torque Majority Gate Dmitri Nikonov Thanks to George ourianoff Dmitri.e.nikonov@intel.com 1 Outline Spin majority gate with in-pane magnetization Spin majority gate with perpendicular
More informationReversal mode instability and magnetoresistance in perpendicular (Co/Pd)/Cu/(Co/Ni) pseudo spin valves. Abstract
Reversal mode instability and magnetoresistance in perpendicular (Co/Pd)/Cu/(Co/Ni) pseudo spin valves J. E. Davies 1,*, D. A. Gilbert 2, S. M. Mohseni 3,4, R. K. Dumas 5, J. Åkerman 3,4,5 and Kai Liu
More informationMRAM: Device Basics and Emerging Technologies
MRAM: Device Basics and Emerging Technologies Matthew R. Pufall National Institute of Standards and Technology 325 Broadway, Boulder CO 80305-3337 Phone: +1-303-497-5206 FAX: +1-303-497-7364 E-mail: pufall@boulder.nist.gov
More informationGianluca Gubbiotti. CNR-Istituto Officina dei Materiali (IOM) -Unità di Perugia. Italian School on Magnetism, Pavia 8 th February 2011
Brillouin Light Scattering Spectroscopy Gianluca Gubbiotti CNR-Istituto Officina dei Materiali (IOM) -Unità di Perugia Italian School on Magnetism, Pavia 8 th February 2011 gubbiotti@fisica.unipg.it http://ghost.fisica.unipg.it
More informationSUPPLEMENTARY INFORMATION
SUPPLEMENTARY INFORMATION doi: 10.1038/nPHYS147 Supplementary Materials for Bias voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions Se-Chung Oh 1,
More informationarxiv: v1 [cond-mat.mtrl-sci] 7 Nov 2012
Spin torque switching in perpendicular films at finite temperature, HP-13 Ru Zhu and P B Visscher arxiv:12111665v1 [cond-matmtrl-sci] 7 Nov 212 MINT Center and Department of Physics and Astronomy University
More informationShape anisotropy revisited in single-digit
Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions K. Watanabe 1, B. Jinnai 2, S. Fukami 1,2,3,4*, H. Sato 1,2,3,4, and H. Ohno 1,2,3,4,5 1 Laboratory for Nanoelectronics and
More informationImprinting domain/spin configurations in antiferromagnets. A way to tailor hysteresis loops in ferromagnetic-antiferromagnetic systems
Imprinting domain/spin configurations in antiferromagnets A way to tailor hysteresis loops in ferromagnetic-antiferromagnetic systems Dr. J. Sort Institució Catalana de Recerca i Estudis Avançats (ICREA)
More informationintroduction: what is spin-electronics?
Spin-dependent transport in layered magnetic metals Patrick Bruno Max-Planck-Institut für Mikrostrukturphysik, Halle, Germany Summary: introduction: what is spin-electronics giant magnetoresistance (GMR)
More informationWouldn t it be great if
IDEMA DISKCON Asia-Pacific 2009 Spin Torque MRAM with Perpendicular Magnetisation: A Scalable Path for Ultra-high Density Non-volatile Memory Dr. Randall Law Data Storage Institute Agency for Science Technology
More informationInjection locking at zero field in two free layer spin-valves
Injection locking at zero field in two free layer spin-valves Mario Carpentieri, 1 Takahiro Moriyama, 2 Bruno Azzerboni, 3 Giovanni Finocchio 3 1 Department of Ingegneria Elettrica e dell Informazione,
More informationManipulation of the magnetization of Perpendicular magnetized Rare-earth-transition metal alloys using polarized light
Manipulation of the magnetization of Perpendicular magnetized Rare-earth-transition metal alloys using polarized light S. Mangin 7th Framework Program for Research IEF : Intra-European Fellowships IOF
More informationOptical studies of current-induced magnetization
Optical studies of current-induced magnetization Virginia (Gina) Lorenz Department of Physics, University of Illinois at Urbana-Champaign PHYS403, December 5, 2017 The scaling of electronics John Bardeen,
More informationPhase Coherent Precessional Magnetization Reversal in Microscopic Spin Valve Elements
Phase Coherent Precessional Magnetization Reversal in Microscopic Spin Valve Elements H.W. Schumacher 1), C. Chappert 1), P. Crozat 1), R.C. Sousa 2), P.P. Freitas 2), J. Miltat 3), J. Fassbender 4), and
More informationCurrent-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel. Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer
Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer Jun HAYAKAWA 1,2, Shoji IKEDA 2, Young Min LEE 2, Ryutaro SASAKI
More informationSpin orbit torques and Dzyaloshinskii-Moriya interaction in dualinterfaced
Supplementary Information Spin orbit torques and Dzyaloshinskii-Moriya interaction in dualinterfaced Co-Ni multilayers Jiawei Yu, Xuepeng Qiu, Yang Wu, Jungbum Yoon, Praveen Deorani, Jean Mourad Besbas,
More informationSUPPLEMENTARY INFORMATION
SUPPLEMENTARY INFORMATION doi:10.1038/nature11733 1 Ising-Macrospin model The Ising-Macrospin (IM) model simulates the configuration of the superlattice (SL) by assuming every layer is a single spin (macrospin)
More informationMicromagnetic Modeling of Soft Underlayer Magnetization Processes and Fields in Perpendicular Magnetic Recording
1670 IEEE TRANSACTIONS ON MAGNETICS, VOL. 38, NO. 4, JULY 2002 Micromagnetic Modeling of Soft Underlayer Magnetization Processes and Fields in Perpendicular Magnetic Recording Manfred E. Schabes, Byron
More informationEnhanced Magnetic Properties of Bit Patterned Magnetic Recording Media by Trench-Filled Nanostructure
CMRR Report Number 32, Summer 2009 Enhanced Magnetic Properties of Bit Patterned Magnetic Recording Media by Trench-Filled Nanostructure Edward Chulmin Choi, Daehoon Hong, Young Oh, Leon Chen, Sy-Hwang
More informationTheory of Spin Diode Effect
Theory of Spin Diode Effect Piotr Ogrodnik Warsaw University of Technology and Institute of Molecular Physics Polish Academy of Sciences NANOSPIN Summarizing Meeting, Kraków, 11-12th July 216 Outline:
More information10. Magnetoelectric Switching
Beyond CMOS computing 10. Magnetoelectric Switching Dmitri Nikonov Dmitri.e.nikonov@intel.com 1 Outline Magnetoelectric effect to improve spintronic switching Review of experiments on magnetoelectric switching:
More informationMAGNETO-RESISTANCE AND INDUCED DOMAIN STRUCTURE IN TUNNEL JUNCTIONS
Mat. Res. Soc. Symp. Proc. Vol. 674 001 Materials Research Society MAGNETO-RESISTANCE AND INDUCED DOMAIN STRUCTURE IN TUNNEL JUNCTIONS M. Hehn, O. Lenoble, D. Lacour and A. Schuhl Laboratoire de Physique
More informationMagnetization Dynamics in Spintronic Structures and Devices
Japanese Journal of Applied Physics Vol. 45, No. 5A, 2006, pp. 3835 3841 #2006 The Japan Society of Applied Physics Magnetization Dynamics in Spintronic Structures and Devices Structure, Materials and
More informationMicromagnetic Modeling
Micromagnetic Modeling P. B. Visscher Xuebing Feng, D. M. Apalkov, and Arkajyoti Misra Department of Physics and Astronomy Supported by NSF grants # ECS-008534 and DMR-0213985, and DOE grant # DE-FG02-98ER45714
More informationTwo-terminal spin orbit torque magnetoresistive random access memory
Two-terminal spin orbit torque magnetoresistive random access memory Noriyuki Sato 1, Fen Xue 1,3, Robert M. White 1,2, Chong Bi 1, and Shan X. Wang 1,2,* 1 Stanford University, Department of Electrical
More informationSpin wave assisted current induced magnetic. domain wall motion
Spin wave assisted current induced magnetic domain wall motion Mahdi Jamali, 1 Hyunsoo Yang, 1,a) and Kyung-Jin Lee 2 1 Department of Electrical and Computer Engineering, National University of Singapore,
More informationMagnetic recording technology
Magnetic recording technology The grain (particle) can be described as a single macrospin μ = Σ i μ i 1 0 1 0 1 W~500nm 1 bit = 300 grains All spins in the grain are ferromagnetically aligned B~50nm Exchange
More informationSpin pumping and spin transport in magne0c metal and insulator heterostructures. Eric Montoya Surface Science Laboratory Simon Fraser University
Spin pumping and spin transport in magne0c metal and insulator heterostructures Eric Montoya Surface Science Laboratory Simon Fraser University Why use spin currents? We can eliminate circumvent these
More informationDetermination of the Interfacial Dzyaloshinskii-Moriya Interaction (idmi) in the Inversion Symmetry Broken Systems
Determination of the Interfacial Dzyaloshinskii-Moriya Interaction (idmi) in the Inversion Symmetry Broken Systems 27 Nov. 2015 Chun-Yeol You (cyyou@inha.ac.kr) Dept. of Physics, Inha University, Korea
More informationSkyrmions in symmetric bilayers
Skyrmions in symmetric bilayers A. Hrabec, J. Sampaio, J.Miltat, A.Thiaville, S. Rohart Lab. Physique des Solides, Univ. Paris-Sud, CNRS, 91405 Orsay, France I. Gross, W. Akhtar, V. Jacques Lab. Charles
More informationUltrafast switching of a nanomagnet by a combined out-of-plane and in-plane polarized spin-current pulse
Ultrafast switching of a nanomagnet by a combined out-of-plane and in-plane polarized spin-current pulse O. J. Lee, V. S. Pribiag, P. M. Braganca, P. G. Gowtham, D. C. Ralph and R. A. Buhrman Cornell University,
More informationMagnetoresistance due to Domain Walls in Micron Scale Fe Wires. with Stripe Domains arxiv:cond-mat/ v1 [cond-mat.mes-hall] 9 Mar 1998.
Magnetoresistance due to Domain Walls in Micron Scale Fe Wires with Stripe Domains arxiv:cond-mat/9803101v1 [cond-mat.mes-hall] 9 Mar 1998 A. D. Kent a, U. Ruediger a, J. Yu a, S. Zhang a, P. M. Levy a
More informationJ 12 J 23 J 34. Driving forces in the nano-magnetism world. Intra-atomic exchange, electron correlation effects: Inter-atomic exchange: MAGNETIC ORDER
Driving forces in the nano-magnetism world Intra-atomic exchange, electron correlation effects: LOCAL (ATOMIC) MAGNETIC MOMENTS m d or f electrons Inter-atomic exchange: MAGNETIC ORDER H exc J S S i j
More informationScanning Probe Microscopy. L. J. Heyderman
1 Scanning Probe Microscopy 2 Scanning Probe Microscopy If an atom was as large as a ping-pong ball......the tip would have the size of the Matterhorn! 3 Magnetic Force Microscopy Stray field interaction
More informationSUPPLEMENTARY INFORMATION
Spin-orbit torque magnetization switching controlled by geometry C.K.Safeer, Emilie Jué, Alexandre Lopez, Liliana Buda-Prejbeanu, Stéphane Auffret, Stefania Pizzini, Olivier Boulle, Ioan Mihai Miron, Gilles
More informationRoom temperature chiral magnetic skyrmions in ultrathin Pt/Co/MgO nanostructures
Room temperature chiral magnetic skyrmions in ultrathin Pt/Co/MgO nanostructures O.Boulle Spintec CEA-INAC / CNRS / Université Grenoble Alpes, Grenoble, France SOCSIS 2016 - Spestses - 29/06/2016 Acknowledgements
More informationMagnetization reversal in the presence of thermal agitation and spin-transfer torques
Magnetization reversal in the presence of thermal agitation and spin-transfer torques Y.P. Kalmykov, W.T. Coffey, S.V. Titov, J.E. Wegrowe, D. Byrne Université de Perpignan Trinity College Dublin IREE
More informationvoltage measurement for spin-orbit torques"
SUPPLEMENTARY for article "Accurate analysis for harmonic Hall voltage measurement for spin-orbit torques" Seok Jin Yun, 1 Eun-Sang Park, 2 Kyung-Jin Lee, 1,2 and Sang Ho Lim 1,* 1 Department of Materials
More informationStrong linewidth variation for spin-torque nano-oscillators as a function of in-plane magnetic field angle
Strong linewidth variation for spin-torque nano-oscillators as a function of in-plane magnetic field angle K. V. Thadani, 1 G. Finocchio, 2 Z.-P. Li, 1 O. Ozatay, 1 J. C. Sankey, 1 I. N. Krivorotov, 3
More informationGate voltage modulation of spin-hall-torque-driven magnetic switching. Cornell University, Ithaca, NY 14853
Gate voltage modulation of spin-hall-torque-driven magnetic switching Luqiao Liu 1, Chi-Feng Pai 1, D. C. Ralph 1,2 and R. A. Buhrman 1 1 Cornell University, Ithaca, NY 14853 2 Kavli Institute at Cornell,
More informationCurrent-Induced Domain-Wall Dynamics in Ferromagnetic Nanowires
Current-Induced Domain-Wall Dynamics in Ferromagnetic Nanowires Benjamin Krüger 17.11.2006 1 Model The Micromagnetic Model Current Induced Magnetisation Dynamics Phenomenological Description Experimental
More informationPlanar Hall Effect in Magnetite (100) Films
Planar Hall Effect in Magnetite (100) Films Xuesong Jin, Rafael Ramos*, Y. Zhou, C. McEvoy and I.V. Shvets SFI Nanoscience Laboratories, School of Physics, Trinity College Dublin, Dublin 2, Ireland 1 Abstract.
More informationSUPPLEMENTARY INFORMATION
Magnetization switching through giant spin-orbit torque in a magnetically doped topological insulator heterostructure Yabin Fan, 1,,* Pramey Upadhyaya, 1, Xufeng Kou, 1, Murong Lang, 1 So Takei, 2 Zhenxing
More informationCurrent-driven Magnetization Reversal in a Ferromagnetic Semiconductor. (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction
Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction D. Chiba 1, 2*, Y. Sato 1, T. Kita 2, 1, F. Matsukura 1, 2, and H. Ohno 1, 2 1 Laboratory
More informationDispersion and Scaling Law of Dynamic Hysteresis Based on the Landau-Lifshitz-Gilbert Model
Dispersion and Scaling Law of Dynamic Hysteresis Based on the Landau-Lifshitz-Gilbert Model Siying Liu, Hongyi Zhang, Hao Yu * Department of Mathematical Sciences, Xi an Jiaotong-Liverpool University,
More informationMagnetic resonance studies of the fundamental spin-wave modes in individual submicron Cu/NiFe/Cu perpendicularly magnetized disks.
Magnetic resonance studies of the fundamental spin-wave modes in individual submicron Cu/NiFe/Cu perpendicularly magnetized disks. G. de Loubens, V. V. Naletov, and O. Klein arxiv:cond-mat/0606245v3 [cond-mat.mtrl-sci]
More informationFokker-Planck calculation of spintorque switching rates: comparison with telegraph-noise data
Fokker-Planck calculation of spintorque switching rates: comparison with telegraph-noise data P. B.Visscher and D. M. Apalkov Department of Physics and Astronomy The University of Alabama This project
More informationSpin Torque Oscillator from micromagnetic point of view
Spin Torque Oscillator from micromagnetic point of view Liliana BUDA-PREJBEANU Workshop on Advance Workshop Magnetic on Materials Advance / Cluj-Napoca Magnetic (Romania) Materials 16/9/27 / Cluj-Napoca
More informationSpin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory
IOP PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER J. Phys.: Condens. Matter 19 (2007) 165209 (13pp) doi:10.1088/0953-8984/19/16/165209 Spin-transfer torque switching in magnetic tunnel junctions and
More informationGauge Concepts in Theoretical Applied Physics
Gauge Concepts in Theoretical Applied Physics Seng Ghee Tan, Mansoor BA Jalil Data Storage Institute, A*STAR (Agency for Science, Technology and Research) Computational Nanoelectronics and Nano-device
More informationPhysics in Quasi-2D Materials for Spintronics Applications
Physics in Quasi-2D Materials for Spintronics Applications Topological Insulators and Graphene Ching-Tzu Chen IBM TJ Watson Research Center May 13, 2016 2016 C-SPIN Topological Spintronics Device Workshop
More informationarxiv: v3 [cond-mat.mtrl-sci] 21 May 2008
Coupling efficiency for phase locking of a spin transfer oscillator to a microwave current B. Georges, J. Grollier, M. Darques, V. Cros, C. Deranlot, B. Marcilhac, A. Fert Unité Mixte de Physique CNRS/Thales
More informationSpin electronics at the nanoscale. Michel Viret Service de Physique de l Etat Condensé CEA Saclay France
Spin electronics at the nanoscale Michel Viret Service de Physique de l Etat Condensé CEA Saclay France Principles of spin electronics: ferromagnetic metals spin accumulation Resistivity of homogeneous
More informationMagnetic bubblecade memory based on chiral domain walls
Magnetic bubblecade memory based on chiral domain walls Kyoung-Woong Moon, Duck-Ho Kim, Sang-Cheol Yoo, Soong-Geun Je, Byong Sun Chun, Wondong Kim, Byoung-Chul Min, Chanyong Hwang & Sug-Bong Choe 1. Sample
More informationCurrent-induced vortex displacement and annihilation in a single permalloy disk
Current-induced vortex displacement and annihilation in a single permalloy disk T. Ishida, 1 T. Kimura, 1,2,3, * and Y. Otani 1,2,3 1 Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha,
More information