Improvement of Electromigration Lifetime in Al-Si-Cu/Ti/TiN/Ti Layered Interconnects
|
|
|
- Kimberly Scott
- 6 years ago
- Views:
Transcription
1 Improvement of Electromigration Lifetime in Al-Si-Cu/Ti/TiN/Ti Layered Interconnects Tomoyuki Yoshida, Shoji Hashimoto, Hideki Hosokawa, Takeshi Ohwaki, Yasuichi Mitsushima, Yasunori Taga ( borophosphosilicate glass ) Al-Si-Cu/Ti/TiN/Ti B Al() B Al()X.63 Ti TiN Al Al() Al-Si- Cu Al()Ti ()Ti () Ti() EM Effect of the exposure of underlying dielectric (borophosphosilicate glass) films to a humid air ambient on crystallographic orientation in Al-Si-Cu/Ti/TiN/Ti layered films has been investigated as a function of the boron content and exposure time of the dielectric films. The Al() orientation in the layered films was found to improve drastically with increasing boron content and exposure time of the dielectric films. The full width at half maximum value of the rocking curve for an Al() x-ray diffraction peak reached.63 degrees, which is the lowest value ever reported for an Al-alloy film on Ti and/or TiN underlayers. It was also found that the Al- Si-Cu surface became smoother and the average grain size increased as the Al() orientation improved. The improved Al() orientation was attributed to the improved Ti() orientation of the bottom Ti film. The cause of the improved Ti() orientation was then investigated. As a result, it was confirmed that the Ti() orientation improved with increasing surface concentration of the water absorbed in the dielectric films. Further, it was demonstrated that interconnects fabricated from the improved layered film had excellent electromigration resistance.
2 LSI ( Large Scale Integration ) Al Al ( EM ) Al EM Al() () Al LSI AlTi TiN Al() Ti ()TiN() Al() Al() EM TiTiN TiTiN Onoda Ti() Ti Al-Si-Cu/Ti/TiN/Ti EM B BPSG ( Borophosphosilicate glass ) BPSGB Ti() TiN()Al() EM Al-Si-Cu/Ti/TiN/Ti Ti ( stti ) Si TiNstTiN ndtin sttinal Si ndtin sttin Ti Al ndti Al() BPSGCVD Si()93 B 4.4wt% P 3wt% ( 36%R. H. ).5 36 TiN/Ti TiN 73 Al-Si-Cu/Ti/TiN Al-Si-Cu ( 8 ( nm ) Dielectric ( 8 nm ) Si Substrate nd Ti ( 5 nm ) nd TiN ( nm ) st TiN ( nm ) st Ti ( 5 nm ) Schematic diagram of Al-Si-Cu/Ti/TiN/Ti interconnect structure.
3 Diffraction Intensity ( cps ) 3 8 Torr DC MRC Eclipse-E4 ) TiTiN35 Al-Si-Cu5 TiN/Ti Al-Si-Cu Ti/TiN/Ti TiN/Tiθ-θX Al-Si-CuAl() XCoKα SEM Al-Si- Cu 365nm ) SIMS ATOMICA A-DIDA3 EM Al-Si-Cu/Ti/TiN/Ti µm.5µm ( N + %H ) 4 95EM µm.5µm 4MA/cm 7MA/cm Ti() B Ti()TiN() TiN() Ti() Ti TiN TiN/TiSEM 4.4wt% B 36 B.5 Ti()TiN() 3 3 Ti() Ti() wt% BPSG. Ti()-% wt% B 3.6 Ti()-3.6% wt% B 4.4 Ti()-4.4% wt% B Ti() B TiN/Ti θ-θx Ti() Ti()TiN() 3 B B Ti() Ti() TiN() TiN() - 3 Exposure Time ( hours ) Ti(), Ti(), and TiN() diffraction peak intensities for TiN/Ti films as a function of air exposure time of dielectric films with,., 3.6, and 4.4 wt. % boron.
4 FWHM ( deg. ) Peak Intensity ( arb. units ) B Al- Si-Cu/Ti/TiN/Tiθ-θX Al Al()Al 3 Ti() Al 3 Ti()Al-Si-Cu Ti Al() Al() Al() B B Al() Al() TiN() B Al 3 Ti()B Al 3 Ti() Al 3 Ti()Ti() Al() sttin() ndtin() ndti()al 3 Ti() Al-Si-Cu() 4 Al() B 4.4wt% Ti TiN Al 5 5 Al() PSG(Inten) wt% B BPSG(,. wt% Inten) B BPSG(3.6, wt% BInten.) BPSG(4.4, wt% BInten.) Exposure Time ( hours ) Typical SEM photographs of (a) highly and (b) less oriented TiN/Ti films. Peak intensity and full width at half-maximum ( FWHM ) value of Al() rocking curve for Al-Si-Cu/Ti/TiN/Ti films as a function of dielectric films with,., 3.6, and 4.4 wt. % boron.
5 Reflectance ( % ) R ( nm ) q Ta-Al Al.5 4 Al-Si-Cu Al() Al() Al-Si-Cu Al() Al-Si-CuSEM B Al-Si-CuAl() Al() Ti() Ti() Ti () () (3) B BPSG B Ti()BPSG B Ti() Ti() BPSGB BPSG SIMS atoms/cm 3 B FWHM ( deg. ) Reflectance and root mean square roughness (R q ) of Al-Si-Cu surfaces as a function of Al() FWHM value for all the samples shown in Fig. 4. SEM photographs of surfaces of Al-Si-Cu films with Al() FWHM values of (a).63 and (b) 4. degrees.
6 Hydrogen Atom Concentration ( atoms/cm ) Hydrogen Atom Concentration ( atoms/cm 3 ) Al() FWHM ( deg. ) B Ti() Ti() Ti() Ti() BPSGTi Ti/TiN/Ti Al-Si-Cu BPSGB 3.6wt% Ti()Al() Ti() Al() Ti()Al() 3cps.65 B4.4wt% 36 BPSG 4 SIMS B3.6wt% BPSG B4.4wt% Ti() Intensity ( 3 cps ) 3 Al() Ti() 3 Immersion Time ( hours ) Ti() diffraction intensity for TiN/Ti fims and Al() FWHM value for Al-Si- Cu/Ti/TiN/Ti films as a function of immersion time of dielectric film ( 3.6 wt. % B ) in hot ( 95 C ) water h. wt% B 3.6 wt% B 4.4 wt% B immersed in hot water for h ( 3.6 wt.% B ) 44 h exposed to air for 36 h ( 4.4 wt.% B ) 9 3 Depth ( nm ) Depth ( nm ) SIMS depth profiles of hydrogen atoms for dielectric films with different SIMS depth profiles of hydrogen atoms for dielectric film with 3.6 wt. % B and h waterimmersion and dielectric film with 4.4 wt. % B and 36 h air-exposure.
7 36 BPSG ( <nm ) TiTi() AlAl() 8 Ti()Al() Yoshimaru 8 3 BPSG SIMS 8 Ti()Al() BPSG Ti BPSG 8 TDS ( Thermal Desorption Spectroscopy ) 35 BPSG 4.4wt% B 5 BPSG 35 TDS5 BPSG 35Ti 5 B 4.4wt% 5 4 BPSGTi 355 Ti BPSG BPSG Ti Ti() B Ti() B Ti() B Ti() BTi Ti() Ti() Si-OH Ti BPSG Ti BPSG Ti TiTi Ti Ti () Ti () () Ti Ti Ti BPSG BPSG Ti Ti() Intensity ( cps ) 8 4 without heating with heating Boron Content ( wt % ) Ti() diffraction intensity as a function of boron content of dielectric films for TiN/Ti films deposited on dielectric films with and without heating at 35 in vacuum.
8 Cumulative Failure ( % ) BPSG35 BPSG BPSG Al() Al-Si-Cu/Ti/TiN/Ti µm.5µm EM Al()4..65 B wt% 5 BPSG B 3.6wt% ( 95 ) BPSG µm.5µmem Al() Al().65 ) Al()4. ) Ta =95 C 4. deg..65 deg µm.5 4. µm Time to Failure ( hours ) Log-normal plots of EM failure time distributions for.5- and.-µm wide Al-Si- Cu/Ti/TiN/Ti lines. These lines were fabricated from two kinds of layered films with Al() FWHM values of 4. and.65 degrees. Al EM Al() Al EM 4 Al() EM µm.5µm EM EMBPSG SEM EM Al Al-Si-Cu/Ti/TiN/TiAl() BPSG X Al().63 Ti Al Al()Al Al()Ti() TiN()Ti() Ti() Ti() BPSG Al()EM EM SEM
9 ) Vaidya, S. and Sinha, A. K. : Thin Solid Films, (98), 53 ) Knorr, D. B. and Tracy, D. P. : Appl. Phys. Lett., (99), 6 3) Toyoda, H., et al. : Proc. the 3nd Int. Reliability Physics Symp., (994), 78, IEEE 4) Onoda, H., et al. : J. Appl. Phys., (995), 885 5) Shibata, H., et al. : Jpn. J. Appl. Phys., (993), ) Olowolafe, J. O., et al. : Appl. Phys. Lett., (993), 443 7) Kaizuka, T., et al. : Jpn. J. Appl. Phys., (993),47 8) Onoda, H., et al. : Proc. the 34th Int. Reliability Physics Symp., (996), 39, IEEE 9) Sekiguchi, M., et al. : J. Vac. Sci. Technol., (994), 99 ) Inoue, I., et al. : J. Electrochem. Soc., (994), 56 ) Yoshimaru, M., et al. : J. Electrochem. Soc., (996), 33 ) Dunken, H. H. : Treatise on Materials Science and Technology Vol. Glass III, Ed. by Tomozawa, M. and Doremus, R. H., (98),, Academic Press, New York
Off-axis unbalanced magnetron sputtering of YBa2Cu307 thin films
ELSEVIER Materials Chemistry and Physics 49 (1997) 229-233 MATERIALS CHEMISTRYAND PHYSICS Off-axis unbalanced magnetron sputtering of YBa2Cu307 thin films Wen-Chou Tsai, Tseung-Yuen Tseng * Institute of
Local Joule Heating and Overall Resistance Increase
Journal in oid-containing of ELECTRONIC MATERIALS, Aluminum ol. 30, Interconnects No. 4, 2001 367 Special Issue Paper Local Joule Heating and Overall Resistance Increase in oid-containing Aluminum Interconnects
CORRELATION BETWEEN HOT PLATE EMISSIVITY AND WAFER TEMPERATURE AT LOW TEMPERATURES
CORRELATION BETWEEN HOT PLATE EMISSIVITY AND WAFER TEMPERATURE AT LOW TEMPERATURES Tomomi Murakami 1*, Takashi Fukada 1 and Woo Sik Yoo 2 1 WaferMasters Service Factory, 2020-3 Oaza Tabaru, Mashiki, Kamimashiki,
Elementary Process of Electromigration at Metallic Nanojunctions in the Ballistic Regime
Elementary Process of Electromigration at Metallic Nanojunctions in the Ballistic Regime Kaz Hirakawa Institute of Industrial Science, University of Tokyo CREST, JST collaborators: Akinori Umeno, Kenji
Low temperature anodically grown silicon dioxide films for solar cell. Nicholas E. Grant
Low temperature anodically grown silicon dioxide films for solar cell applications Nicholas E. Grant Outline 1. Electrochemical cell design and properties. 2. Direct-current current anodic oxidations-part
ANTIMONY ENHANCED HOMOGENEOUS NITROGEN INCORPORATION INTO GaInNAs FILMS GROWN BY ATOMIC HYDROGEN-ASSISTED MOLECULAR BEAM EPITAXY
ANTIMONY ENHANCED HOMOGENEOUS NITROGEN INCORPORATION INTO GaInNAs FILMS GROWN BY ATOMIC HYDROGEN-ASSISTED MOLECULAR BEAM EPITAXY Naoya Miyashita 1, Nazmul Ahsan 1, and Yoshitaka Okada 1,2 1. Research Center
5 Fig. 1 Schematic drawing of the apparatus.
RHEED Hydrogen doser Transfer Rod Gate Valve Sample QMS Ag cell Screen Pd cell Gate Valve Loading Chamber Transfer Rod 5 Fig. Schematic drawing of the apparatus. .5 = nm Pd Ag Normalized d - = nm d Si
Effects of plasma treatment on the precipitation of fluorine-doped silicon oxide
ARTICLE IN PRESS Journal of Physics and Chemistry of Solids 69 (2008) 555 560 www.elsevier.com/locate/jpcs Effects of plasma treatment on the precipitation of fluorine-doped silicon oxide Jun Wu a,, Ying-Lang
Plasma Deposition (Overview) Lecture 1
Plasma Deposition (Overview) Lecture 1 Material Processes Plasma Processing Plasma-assisted Deposition Implantation Surface Modification Development of Plasma-based processing Microelectronics needs (fabrication
Removal of Cu Impurities on a Si Substrate by Using (H 2 O 2 +HF) and (UV/O 3 +HF)
Journal of the Korean Physical Society, Vol. 33, No. 5, November 1998, pp. 579 583 Removal of Cu Impurities on a Si Substrate by Using (H 2 O 2 +HF) and (UV/O 3 +HF) Baikil Choi and Hyeongtag Jeon School
Control of deposition profile of Cu for largescale integration (LSI) interconnects by plasma chemical vapor deposition*
Pure Appl. Chem., Vol. 77, No. 2, pp. 391 398, 2005. DOI: 10.1351/pac200577020391 2005 IUPAC Control of deposition profile of Cu for largescale integration (LSI) interconnects by plasma chemical vapor
Effect of Surface Contamination on Solid-State Bondability of Sn-Ag-Cu Bumps in Ambient Air
Materials Transactions, Vol. 49, No. 7 (28) pp. 18 to 112 Special Issue on Lead-Free Soldering in Electronics IV #28 The Japan Institute of Metals Effect of Surface Contamination on Solid-State Bondability
High-Current Y-Ba-Cu-O Coated Conductor using Metal Organic Chemical-Vapor Deposition and Ion-Beam-Assisted Deposition
SP-T-152 High-Current Y-Ba-Cu-O Coated Conductor using Metal Organic Chemical-Vapor Deposition and Ion-Beam-Assisted Deposition V. Selvamanickam, G. Carota, M. Funk, N. Vo, and P. Haldar U. Balachandran,
ABSTRACT 1. INTRODUCTION 2. EXPERIMENT
Fabrication of Nanostructured Heterojunction LEDs Using Self-Forming Moth-Eye Type Arrays of n-zno Nanocones Grown on p-si (111) Substrates by Pulsed Laser Deposition D. J. Rogers 1, V. E. Sandana 1,2,3,
Leakage Mechanisms. Thin films, fully depleted. Thicker films of interest for higher voltage applications. NC State
Leakage Mechanisms Thin films, fully depleted Leakage controlled by combined thermionic / field emission across the Schottky barrier at the film-electrode interfaces. Film quality effects barrier height,
Formation of Nanostructured Layers for Passivation of High Power Silicon Devices
Vol. 113 (2008) ACTA PHYSICA POLONICA A No. 3 Proceedings of the 13th International Symposium UFPS, Vilnius, Lithuania 2007 Formation of Nanostructured Layers for Passivation of High Power Silicon Devices
Nanocarbon Interconnects - From 1D to 3D
Nanocarbon Interconnects - From 1D to 3D Cary Y. Yang Santa Clara University Outline Introduction CNT as 1D interconnect structure CNT-graphene as all-carbon 3D interconnect Summary Device Scaling driven
Case Study of Electronic Materials Packaging with Poor Metal Adhesion and the Process for Performing Root Cause Failure Analysis
Case Study of Electronic Materials Packaging with Poor Metal Adhesion and the Process for Performing Root Cause Failure Analysis Dr. E. A. Leone BACKGRUND ne trend in the electronic packaging industry
3D Stacked Buck Converter with SrTiO 3 (STO) Capacitors on Silicon Interposer
3D Stacked Buck Converter with SrTiO 3 (STO) Capacitors on Silicon Interposer Makoto Takamiya 1, Koichi Ishida 1, Koichi Takemura 2,3, and Takayasu Sakurai 1 1 University of Tokyo, Japan 2 NEC Corporation,
Title of file for HTML: Supplementary Information Description: Supplementary Figures and Supplementary References
Title of file for HTML: Supplementary Information Description: Supplementary Figures and Supplementary References Supplementary Figure 1. SEM images of perovskite single-crystal patterned thin film with
MEASUREMENT CAPABILITIES OF X-RAY FLUORESCENCE FOR BPSG FILMS
, MEASUREMENT CAPABILITIES OF X-RAY FLUORESCENCE FOR BPSG FILMS K.O. Goyal, J.W. Westphal Semiconductor Equipment Group Watkins-Johnson Company Scotts Valley, California 95066 Abstract Deposition of borophosphosilicate
Modification of Thin Film Properties by Sputtered Particles
1 Modification of Thin Film Properties by Sputtered Particles Yasunori Taga 1. Introduction The novelty of the functions provided by plasma-assisted physical vapor deposition films, together with their
Supporting Information
Supporting Information Dynamic Interaction between Methylammonium Lead Iodide and TiO 2 Nanocrystals Leads to Enhanced Photocatalytic H 2 Evolution from HI Splitting Xiaomei Wang,, Hong Wang,, Hefeng Zhang,,
MICROCHIP MANUFACTURING by S. Wolf
by S. Wolf Chapter 15 ALUMINUM THIN-FILMS and SPUTTER-DEPOSITION 2004 by LATTICE PRESS CHAPTER 15 - CONTENTS Aluminum Thin-Films Sputter-Deposition Process Steps Physics of Sputter-Deposition Magnetron-Sputtering
Thermoelectric and electrical properties of Si-doped InSb thin films. University, Japan
10.1149/1.3109626 The Electrochemical Society Thermoelectric and electrical properties of Si-doped InSb thin films H. Nagata a and S. Yamaguchi a,b a Department of Electrical, Electronic and Information
Set-up for ultrafast time-resolved x-ray diffraction using a femtosecond laser-plasma kev x-ray-source
Set-up for ultrafast time-resolved x-ray diffraction using a femtosecond laser-plasma kev x-ray-source C. Blome, K. Sokolowski-Tinten *, C. Dietrich, A. Tarasevitch, D. von der Linde Inst. for Laser- and
Quasi-periodic nanostructures grown by oblique angle deposition
JOURNAL OF APPLIED PHYSICS VOLUME 94, NUMBER 12 15 DECEMBER 2003 Quasi-periodic nanostructures grown by oblique angle deposition T. Karabacak, a) G.-C. Wang, and T.-M. Lu Department of Physics, Applied
Effective Capacitance Enhancement Methods for 90-nm DRAM Capacitors
Journal of the Korean Physical Society, Vol. 44, No. 1, January 2004, pp. 112 116 Effective Capacitance Enhancement Methods for 90-nm DRAM Capacitors Y. K. Park, Y. S. Ahn, S. B. Kim, K. H. Lee, C. H.
Supplementary Information for. Effect of Ag nanoparticle concentration on the electrical and
Supplementary Information for Effect of Ag nanoparticle concentration on the electrical and ferroelectric properties of Ag/P(VDF-TrFE) composite films Haemin Paik 1,2, Yoon-Young Choi 3, Seungbum Hong
"Enhanced Layer Coverage of Thin Films by Oblique Angle Deposition"
Mater. Res. Soc. Symp. Proc. Vol. 859E 2005 Materials Research Society JJ9.5.1 "Enhanced Layer Coverage of Thin Films by Oblique Angle Deposition" * karabt@rpi.edu Tansel Karabacak *, Gwo-Ching Wang, and
High Performance, Low Operating Voltage n-type Organic Field Effect Transistor Based on Inorganic-Organic Bilayer Dielectric System
Journal of Physics: Conference Series PAPER OPEN ACCESS High Performance, Low Operating Voltage n-type Organic Field Effect Transistor Based on Inorganic-Organic Bilayer Dielectric System To cite this
Effect of Spiral Microwave Antenna Configuration on the Production of Nano-crystalline Film by Chemical Sputtering in ECR Plasma
THE HARRIS SCIENCE REVIEW OF DOSHISHA UNIVERSITY, VOL. 56, No. 1 April 2015 Effect of Spiral Microwave Antenna Configuration on the Production of Nano-crystalline Film by Chemical Sputtering in ECR Plasma
TiO2/sapphire Beam Splitter for High-order Harmonics
Technical Communication TiO2/sapphire Beam Splitter for High-order Harmonics Y. Sanjo*1, M. Murata*1, Y. Tanaka*1, H. Kumagai*1, and M. Chigane*2 *1 Graduate School of Engineering,Osaka City University,
Interaction between Single-walled Carbon Nanotubes and Water Molecules
Workshop on Molecular Thermal Engineering Univ. of Tokyo 2013. 07. 05 Interaction between Single-walled Carbon Nanotubes and Water Molecules Shohei Chiashi Dept. of Mech. Eng., The Univ. of Tokyo, Japan
Spontaneous generation of negatively charged clusters and their deposition as crystalline films during hot-wire silicon chemical vapor deposition*
Pure Appl. Chem., Vol. 78, No. 9, pp. 1715 1722, 2006. doi:10.1351/pac200678091715 2006 IUPAC Spontaneous generation of negatively charged clusters and their deposition as crystalline films during hot-wire
In-vessel Tritium Inventory in ITER Evaluated by Deuterium Retention of Carbon Dust
FT/P1-19 In-vessel Tritium Inventory in ITER Evaluated by Deuterium Retention of Carbon Dust T. Hino 1), H. Yoshida 1), M. Akiba 2), S. Suzuki 2), Y. Hirohata 1) and Y. Yamauchi 1) 1) Laboratory of Plasma
Study on Improved Resolution of Thick Film Resist (Verification by Simulation)
Study on Improved Resolution of Thick Film Resist (Verification by Simulation) Yoshihisa Sensu, Atsushi Sekiguchi, Yasuhiro Miyake Litho Tech Japan Corporation 2-6-6 Namiki, Kawaguchi, Saitama, 332-0034,
In Situ XPS Analysis of Amorphous Si Layer Formed by Ion Bombardment
In Situ XPS Analysis of Amorphous Si Layer Formed by Ion Bombardment Masahiko Ishii, Yoshiharu Hirose, Toshikazu Satoh, Takeshi Ohwaki, Yasunori Taga ( 300 600eV ) (Ne Ar Xe ) Si(100) X XPS 10 15 cm 2
Relaxation of a Strained Elastic Film on a Viscous Layer
Mat. Res. Soc. Symp. Proc. Vol. 695 Materials Research Society Relaxation of a Strained Elastic Film on a Viscous Layer R. Huang 1, H. Yin, J. Liang 3, K. D. Hobart 4, J. C. Sturm, and Z. Suo 3 1 Department
Development of spectrally selective infrared emitter for thermophotovoltaic power generation
Development of spectrally selective infrared emitter for thermophotovoltaic power generation 波長選択機能を有する熱光起電力発電用赤外線源の開発 Motofumi Suzuki, Department of Micro Engineering, Kyoto University 1. Introduction
Synthesis and Characterization of Innovative Multilayer, Multi Metal Oxide Thin Films by Modified Silar Deposition Method
STUDENT JOURNAL OF PHYSICS Indian Association of Physics Teachers Presentations Synthesis and Characterization of Innovative Multilayer, Multi Metal Oxide Thin Films by Modified Silar Deposition Method
PROCESS MONITORING OF PLASMA ELECTROLYTIC OXIDATION J.-W. Liaw, C.-C. Hsiao, Clinton Fong, Y.-L. Tsai, S.-C. Chung, Oleg Demin Materials Research
PROCESS MONITORING OF PLASMA ELECTROLYTIC OXIDATION J.-W. Liaw, C.-C. Hsiao, Clinton Fong, Y.-L. Tsai, S.-C. Chung, Oleg Demin Materials Research Laboratories, Industrial Technology Research Institute,
High-Precision Evaluation of Ultra-Shallow Impurity Profiles by Secondary Ion Mass Spectrometry
High-Precision Evaluation of Ultra-Shallow Impurity Profiles by Secondary Ion Mass Spectrometry Yoko Tada Kunihiro Suzuki Yuji Kataoka (Manuscript received December 28, 2009) As complementary metal oxide
Multi-Layer Coating of Ultrathin Polymer Films on Nanoparticles of Alumina by a Plasma Treatment
Mat. Res. Soc. Symp. Vol. 635 2001 Materials Research Society Multi-Layer Coating of Ultrathin Polymer Films on Nanoparticles of Alumina by a Plasma Treatment Donglu Shi, Zhou Yu, S. X. Wang 1, Wim J.
Development of Lift-off Photoresists with Unique Bottom Profile
Transactions of The Japan Institute of Electronics Packaging Vol. 8, No. 1, 2015 [Technical Paper] Development of Lift-off Photoresists with Unique Bottom Profile Hirokazu Ito, Kouichi Hasegawa, Tomohiro
Supplementary Information
Supplementary Information Supplementary Figure 1. fabrication. A schematic of the experimental setup used for graphene Supplementary Figure 2. Emission spectrum of the plasma: Negative peaks indicate an
Study of Deprotection Reaction during Exposure in Chemically Amplified Resists for Lithography Simulation
Study of Deprotection Reaction during Exposure in hemically Amplified Resists for Lithography Simulation Yasuhiro Miyake, Mariko Isono and Atsushi Sekiguchi Litho Tech Japan orporation, 2-6-6-201, Namiki,
Temperature Dependent Optical Band Gap Measurements of III-V films by Low Temperature Photoluminescence Spectroscopy
Temperature Dependent Optical Band Gap Measurements of III-V films by Low Temperature Photoluminescence Spectroscopy Linda M. Casson, Francis Ndi and Eric Teboul HORIBA Scientific, 3880 Park Avenue, Edison,
Supporting Information. for. Angew. Chem. Int. Ed. Z Wiley-VCH 2003
Supporting Information for Angew. Chem. Int. Ed. Z52074 Wiley-VCH 2003 69451 Weinheim, Germany Kinetic and Thermodynamic Control via Chemical Bond Rearrangement on Si(001) Surface Chiho Hamai, Akihiko
INTERNATIONAL JOURNAL OF PURE AND APPLIED RESEARCH IN ENGINEERING AND TECHNOLOGY
INTERNATIONAL JOURNAL OF PURE AND APPLIED RESEARCH IN ENGINEERING AND TECHNOLOGY A PATH FOR HORIZING YOUR INNOVATIVE WORK DEVELOPMENT OF HYDROXYAPATITE NANOCEREMICS FOR METHANOL AND ETHANOL SENSOR RAJENDRA
Diamond-like carbon film deposition on PZT ferroelectrics and YBCO superconducting films using KrF excimer laser deposition
Composites: Part B 30 (1999) 685 689 www.elsevier.com/locate/compositesb Diamond-like carbon film deposition on PZT ferroelectrics and YBCO superconducting films using KrF excimer laser deposition K. Ebihara*,
arxiv:cond-mat/ v1 31 Oct 2001
Monte Carlo simulation of electromigration phenomena in metallic lines C. Pennetta, L. Reggiani and E. Alfinito arxiv:cond-mat/0110647v1 31 Oct 2001 INFM - National Nanotechnology Laboratory, Dipartimento
A comparison of the defects introduced during plasma exposure in. high- and low-k dielectrics
A comparison of the defects introduced during plasma exposure in high- and low-k dielectrics H. Ren, 1 G. Jiang, 2 G. A. Antonelli, 2 Y. Nishi, 3 and J.L. Shohet 1 1 Plasma Processing & Technology Laboratory
Formation and micromachining of Teflon fluorocarbon polymer film by a completely dry process using synchrotron radiation
Formation and micromachining of Teflon fluorocarbon polymer film by a completely dry process using synchrotron radiation Muneto Inayoshi, Masafumi Ito, Masaru Hori, and Toshio Goto Department of Quantum
Elastic Constants and Microstructure of Amorphous SiO 2 Thin Films Studied by Brillouin Oscillations
1st International Symposium on Laser Ultrasonics: Science, Technology and Applications July 16-18 2008, Montreal, Canada Elastic Constants and Microstructure of Amorphous SiO 2 Thin Films Studied by Brillouin
Present status and future prospects of Bi-containing semiconductors. M. Yoshimoto and K. Oe Dept. Electronics, Kyoto Institute Technology Japan
Present status and future prospects of Bi-containing semiconductors M. Yoshimoto and K. Oe Dept. Electronics, Kyoto Institute Technology Japan Acknowledgement RBS: Prof. K. Takahiro (Kyoto Inst. Tech.),
Electrostatic Bonding of Silicon-to-ITO coated #7059 Glass using Li-doped Oxide Interlayer
Journal of the Korean Physical Society, Vol. 33, No., November 1998, pp. S406 S410 Electrostatic Bonding of Silicon-to-ITO coated #7059 Glass using Li-doped Oxide Interlayer Jee-Won Jeong, Byeong-Kwon
MO-IMAGING OF GRANULAR AND STRUCTURED HIGH-T C SUPERCONDUCTORS
MO-IMAGING OF GRANULAR AND STRUCTURED HIGH-T C SUPERCONDUCTORS Michael R. Koblischka and Anjela Koblischka-Veneva 1 Institute of Experimental Physics, University of the Saarland, P.O. Box 151150, D-66041
Electronic Supplementary Information. Photoelectrochemical Water Splitting in an Organic Artificial Leaf
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry A. This journal is The Royal Society of Chemistry 2015 Electronic Supplementary Information Photoelectrochemical Water Splitting
Yiping Zhao and Yuping He
Yiping Zhao and Yuping He Department of Physics and Astronomy Nanoscale Science and Engineering Center The University of Georgia, Athens, GA 30602 April 29, 2010 Outline: Introduction Hydrogenation behaviors
Electronic Supplementary Information. Hydrogen Evolution Reaction (HER) over Electroless- Deposited Nickel Nanospike Arrays
Electronic Supplementary Material (ESI) for RSC Advances. This journal is The Royal Society of Chemistry 2014 Electronic Supplementary Information Hydrogen Evolution Reaction (HER) over Electroless- Deposited
Magnetoresistance Oscillations in Thin Inclined Magnetic Films
Journal of the Korean Physical Society, Vol. 39, No. 6, December 2001, pp. 1055 1059 Magnetoresistance Oscillations in Thin Inclined Magnetic Films Ilsu Rhee and Kiwon Yang Department of Physics, Kyungpook
Supporting Information
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry A. This journal is The Royal Society of Chemistry 2018 Supporting Information Adding refractory 5d transition metal W into PtCo
Magnon-drag thermopile
Magnon-drag thermopile I. DEVICE FABRICATION AND CHARACTERIZATION Our devices consist of a large number of pairs of permalloy (NiFe) wires (30 nm wide, 20 nm thick and 5 µm long) connected in a zigzag
Low-temperature-processed inorganic perovskite solar cells via solvent engineering with enhanced mass transport
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry A. This journal is The Royal Society of Chemistry 1 Low-temperature-processed inorganic perovskite solar cells via solvent engineering
Multilayer Wiring Technology with Grinding Planarization of Dielectric Layer and Via Posts
Tani et al.: Multilayer Wiring Technology with Grinding Planarization (1/6) [Technical Paper] Multilayer Wiring Technology with Grinding Planarization of Dielectric Layer and Via Posts Motoaki Tani, Kanae
REFRACTORY METAL OXIDES: FABRICATION OF NANOSTRUCTURES, PROPERTIES AND APPLICATIONS
REFRACTORY METAL OXIDES: FABRICATION OF NANOSTRUCTURES, PROPERTIES AND APPLICATIONS S.K. Lazarouk, D.A. Sasinovich BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS Outline: -- experimental
Supplementary Figure 1 XRD pattern of a defective TiO 2 thin film deposited on an FTO/glass substrate, along with an XRD pattern of bare FTO/glass
Supplementary Figure 1 XRD pattern of a defective TiO 2 thin film deposited on an FTO/glass substrate, along with an XRD pattern of bare FTO/glass and a reference pattern of anatase TiO 2 (JSPDS No.: 21-1272).
Effects of Pressure and NH 3 Flow on the Two-Dimensional Electron Mobility in AlGaN/GaN Heterostructures
Journal of the Korean Physical Society, Vol. 42, No. 5, May 2003, pp. 691 695 Effects of Pressure and NH 3 Flow on the Two-Dimensional Electron Mobility in AlGaN/GaN Heterostructures Dong-Joon Kim Optical
Body Centered Cubic Magnesium Niobium Hydride with Facile Room Temperature Absorption and Four Weight Percent Reversible Capacity
Electronic Supplementary Information (ESI) for Energy & Environmental Science This journal is The Royal Society of Chemistry 212 Supporting Information Body Centered Cubic Magnesium Niobium Hydride with
Supplementary information
Supplementary information Electrochemical synthesis of metal and semimetal nanotube-nanowire heterojunctions and their electronic transport properties Dachi Yang, ab Guowen Meng,* a Shuyuan Zhang, c Yufeng
DEVICE CHARACTERIZATION OF (AgCu)(InGa)Se 2 SOLAR CELLS
DEVICE CHARACTERIZATION OF (AgCu)(InGa)Se 2 SOLAR CELLS William Shafarman 1, Christopher Thompson 1, Jonathan Boyle 1, Gregory Hanket 1, Peter Erslev 2, J. David Cohen 2 1 Institute of Energy Conversion,
Thermal characterization of Au-Si multilayer using 3- omega method
Thermal characterization of Au-Si multilayer using 3- omega method Sunmi Shin Materials Science and Engineering Program Abstract As thermal management becomes a serious issue in applications of thermoelectrics,
Manufacturable AlGaAs/GaAs HBT Implant Isolation Process Using Doubly Charged Helium
Manufacturable AlGaAs/GaAs HBT Implant Isolation Process Using Doubly Charged Helium ABSTRACT Rainier Lee, Shiban Tiku, and Wanming Sun Conexant Systems 2427 W. Hillcrest Drive Newbury Park, CA 91320 (805)
Evaluation of kinetic-inductance nonlinearity in a singlecrystal NbTiN-based coplanar waveguide
Proc. 14th Int. Conf. on Global Research and Education, Inter-Academia 2015 2016 The Japan Society of Applied Physics Evaluation of kinetic-inductance nonlinearity in a singlecrystal NbTiN-based coplanar
Film Deposition Part 1
1 Film Deposition Part 1 Chapter 11 : Semiconductor Manufacturing Technology by M. Quirk & J. Serda Spring Semester 2013 Saroj Kumar Patra Semidonductor Manufacturing Technology, Norwegian University of
In situ electrical characterization of dielectric thin films directly exposed to plasma vacuum-ultraviolet radiation
JOURNAL OF APPLIED PHYSICS VOLUME 88, NUMBER 4 15 AUGUST 2000 In situ electrical characterization of dielectric thin films directly exposed to plasma vacuum-ultraviolet radiation C. Cismaru a) and J. L.
Supplementary Figure S1. AFM images of GraNRs grown with standard growth process. Each of these pictures show GraNRs prepared independently,
Supplementary Figure S1. AFM images of GraNRs grown with standard growth process. Each of these pictures show GraNRs prepared independently, suggesting that the results is reproducible. Supplementary Figure
MS482 Materials Characterization ( 재료분석 ) Lecture Note 12: Summary. Byungha Shin Dept. of MSE, KAIST
2015 Fall Semester MS482 Materials Characterization ( 재료분석 ) Lecture Note 12: Summary Byungha Shin Dept. of MSE, KAIST 1 Course Information Syllabus 1. Overview of various characterization techniques (1
Electrochemistry. in situ in situ. in situ. Key Words. electrochemical surface science. flame annealing and quenching method.
in situ in situ in situ Key Words electrochemical surface science flame annealing and quenching method in situ in situ in situ not only but also in situ Q Q Q in situ δ q r in situ in situ et al in situ
High characteristic temperature of 1.3 #m crescent buried heterostructure laser diodes
Bull. Mater. Sci., Vol. 11, No. 4, December 1988, pp. 291 295. Printed in India. High characteristic temperature of 1.3 #m crescent buried heterostructure laser diodes Y K SU and T L CHEN Institute of
ABSTRACT INTRODUCTION
Mat. Res. Soc. Symp. Proc. Vol. 696 22 Materials Research Society Surface reconstruction and induced uniaxial magnetic fields on Ni films R. A. Lukaszew, B. McNaughton 1, V. Stoica 2 and R. Clarke 2 Department
1 EX/P4-8. Hydrogen Concentration of Co-deposited Carbon Films Produced in the Vicinity of Local Island Divertor in Large Helical Device
1 EX/P4-8 Hydrogen Concentration of Co-deposited Carbon Films Produced in the Vicinity of Local Island Divertor in Large Helical Device T. Hino 1,2), T. Hirata 1), N. Ashikawa 2), S. Masuzaki 2), Y. Yamauchi
Temperature Dependent Current-voltage Characteristics of P- type Crystalline Silicon Solar Cells Fabricated Using Screenprinting
Temperature Dependent Current-voltage Characteristics of P- type Crystalline Silicon Solar Cells Fabricated Using Screenprinting Process Hyun-Jin Song, Won-Ki Lee, Chel-Jong Choi* School of Semiconductor
High-Temperature Superconducting Materials for High-Performance RF Filters
High-Temperature Superconducting Materials for High-Performance RF Filters vakihiko Akasegawa vkazunori Yamanaka vteru Nakanishi vmanabu Kai (Manuscript received February, ) This paper describes the development
Formation mechanism and Coulomb blockade effect in self-assembled gold quantum dots
Formation mechanism and Coulomb blockade effect in self-assembled gold quantum dots S. F. Hu a) National Nano Device Laboratories, Hsinchu 300, Taiwan R. L. Yeh and R. S. Liu Department of Chemistry, National
Song Fengqi, Zhang Lu, Zhu Lianzhong, Ge Jun, Wang Guanghou *
Low energy cluster beam deposited BN films as the cascade for Field Emission 一 Song Fengqi, Zhang Lu, Zhu Lianzhong, Ge Jun, Wang Guanghou * National laboratory of Solid State Microstructures, Department
SUPPLEMENTARY INFORMATION
Engineered doping of organic semiconductors for enhanced thermoelectric efficiency G.-H. Kim, 1 L. Shao, 1 K. Zhang, 1 and K. P. Pipe 1,2,* 1 Department of Mechanical Engineering, University of Michigan,
XPS/UPS and EFM. Brent Gila. XPS/UPS Ryan Davies EFM Andy Gerger
XPS/UPS and EFM Brent Gila XPS/UPS Ryan Davies EFM Andy Gerger XPS/ESCA X-ray photoelectron spectroscopy (XPS) also called Electron Spectroscopy for Chemical Analysis (ESCA) is a chemical surface analysis
OBSERVATION OF SURFACE DISTRIBUTION OF PRODUCTS BY X-RAY FLUORESCENCE SPECTROMETRY DURING D 2 GAS PERMEATION THROUGH PD COMPLEXES
Iwamura, Y., et al. Observation Of Surface Distribution Of Products By X-Ray Fluorescence Spectrometry During D2 Gas Permeation Through Pd Complexes. in The 12th International Conference on Condensed Matter
High-Performance Semiconducting Polythiophenes for Organic Thin Film. Transistors by Beng S. Ong,* Yiliang Wu, Ping Liu and Sandra Gardner
Supplementary Materials for: High-Performance Semiconducting Polythiophenes for Organic Thin Film Transistors by Beng S. Ong,* Yiliang Wu, Ping Liu and Sandra Gardner 1. Materials and Instruments. All
Supporting Information. Metallic Adhesion Layer Induced Plasmon Damping and Molecular Linker as a Non-Damping Alternative
Supporting Information Metallic Adhesion Layer Induced Plasmon Damping and Molecular Linker as a Non-Damping Alternative Terefe G. Habteyes, Scott Dhuey, Erin Wood, Daniel Gargas, Stefano Cabrini, P. James
DIRECTIVITY AND SENSITIVITY OF HIGH FREQUENCY CARRIER TYPE THIN-FILM MAGNETIC FIELD SENSOR
DIRECTIVITY AND SENSITIVITY OF HIGH FREQUENCY CARRIER TYPE THIN-FILM MAGNETIC FIELD SENSOR M. Yamaguchi a, M. Takezawa a, H. Ohdaira b, K. I. Arai a, and A. Haga b a Research Institute of Electrical Communication,
LOW-TEMPERATURE Si (111) HOMOEPITAXY AND DOPING MEDIATED BY A MONOLAYER OF Pb
LOW-TEMPERATURE Si (111) HOMOEPITAXY AND DOPING MEDIATED BY A MONOLAYER OF Pb O.D. DUBON, P.G. EVANS, J.F. CHERVINSKY, F. SPAEPEN, M.J. AZIZ, and J.A. GOLOVCHENKO Division of Engineering and Applied Sciences,
Spontaneous Pattern Formation from Focused and Unfocused Ion Beam Irradiation
Mat. Res. Soc. Symp. Proc. Vol. 696 2002 Materials Research Society Spontaneous Pattern Formation from Focused and Unfocused Ion Beam Irradiation Alexandre Cuenat and Michael J. Aziz Division of Engineering
Characterization of Charge Trapping and Dielectric Breakdown of HfAlOx/SiON Dielectric Gate Stack
Characterization of Charge Trapping and Dielectric Breakdown of HfAlOx/SiON Dielectric Gate Stack Y. Pei, S. Nagamachi, H. Murakami, S. Higashi, S. Miyazaki, T. Kawahara and K. Torii Graduate School of
Ge Quantum Well Modulators on Si. D. A. B. Miller, R. K. Schaevitz, J. E. Roth, Shen Ren, and Onur Fidaner
10.1149/1.2986844 The Electrochemical Society Ge Quantum Well Modulators on Si D. A. B. Miller, R. K. Schaevitz, J. E. Roth, Shen Ren, and Onur Fidaner Ginzton Laboratory, 450 Via Palou, Stanford CA 94305-4088,
Detection of Water in Low-k
Fakultät Elektrotechnik und Informationstechnik, Institut für Halbleiter- und Mikrosystemtechnik Smart Failure Analysis for New Materials in Electronic Devices Detection of Water in Low-k Dielectric Films
Transparent Electrode Applications
Transparent Electrode Applications LCD Solar Cells Touch Screen Indium Tin Oxide (ITO) Zinc Oxide (ZnO) - High conductivity - High transparency - Resistant to environmental effects - Rare material (Indium)
MS482 Materials Characterization ( 재료분석 ) Lecture Note 5: RBS
2016 Fall Semester MS482 Materials Characterization ( 재료분석 ) Lecture Note 5: RBS Byungha Shin Dept. of MSE, KAIST 1 Course Information Syllabus 1. Overview of various characterization techniques (1 lecture)