DEVICE CHARACTERIZATION OF (AgCu)(InGa)Se 2 SOLAR CELLS
|
|
- Buck Kelly
- 6 years ago
- Views:
Transcription
1 DEVICE CHARACTERIZATION OF (AgCu)(InGa)Se 2 SOLAR CELLS William Shafarman 1, Christopher Thompson 1, Jonathan Boyle 1, Gregory Hanket 1, Peter Erslev 2, J. David Cohen 2 1 Institute of Energy Conversion, University of Delaware, Newark, DE Physics Department, University of Oregon, Eugene, OR, ABSTRACT Ag-alloying of Cu(InGa)Se 2 thin films presents the possibility to increase the bandgap with improved structural properties as a result of a lower melting temperature. (AgCu)(InGa)Se 2 films were deposited by elemental co-evaporation and the resulting solar cell behavior was characterized. While the bandgap in the highest efficiency Cu(InGa)Se 2 cells is ~1.15 ev, Ag alloying allows the bandgap to be increased to 1.3 ev with an increase in V OC, no loss in device efficiency, and fill factors up to 80%. With high Ga content to increase bandgap > 1.5 ev, Ag alloying improves solar cell efficiency. Analysis of the device behavior shows that the basic mechanisms controlling (AgCu)(InGa)Se 2 solar cells and limiting performance with wide bandgap are comparable to those with Cu(InGa)Se 2. Finally the effect of Na in (AgCu)(InGa)Se 2 devices is shown to be comparable to that with Cu(InGa)Se 2 including a decrease in V OC attributed to interface recombination with insufficient Na. INTRODUCTION High efficiency Cu(InGa)Se 2 based thin film solar cells typically have absorber layers with [Ga]/[In+Ga] 0.25 and a bandgap (E g) of ~1.15 ev. Wider bandgap absorber layers are desirable because their higher operating voltage with lower current density can be used to improve module performance, especially at elevated temperatures encountered in most applications. The chalcopyrite CuInSe 2 material system provides several options for alloying the film to increase the bandgap. Alloying with silver to form (AgCu)(InGa)Se 2 has the potential advantage of increasing the bandgap while also decreasing the melting temperature of the material. This might enable the growth of films with reduced structural disorder and defects and, consequently, improved device performance. We have previously shown promising solar cell results with (AgCu)(InGa)Se 2 absorber layers including 17.6% efficiency and V OC = 710 mv with E g = 1.3 ev, and 13.0% efficiency and V OC = 890 mv with E g = 1.6 ev [1]. Further, Nakada et al. reported a cell with V OC = 950 mv and 9.3 % efficiency using a Ag(InGa)Se 2 absorber layer with E g = 1.6 ev [2]. We have also shown that Ag-alloying gives improved sub-bandgap transmission [ 3 ] and sharper bandtails [ 4 ], suggesting improved structural quality. Optical bandgaps of (AgCu)(InGa)Se 2 films have been measured. E g increases by ~ 0.2 ev from Cu(InGa)Se 2 to Ag(InGa)Se 2 with a bowing parameter b = 0.2 for all values of fixed Ga content. In contrast, E g increases from 1.04 ev for CuInSe 2 to 1.67 ev for CuGaSe 2 [5], so Ga alloying has a greater impact for increasing bandgap. In this paper (AgCu)(InGa)Se 2 films have been deposited over a wide compositional range by elemental coevaporation. We characterize the solar cell behavior with these absorber layer films and show improvements in cell efficiency with Ag addition. In addition, the effect of Na incorporation in (AgCu)(InGa)Se 2 devices is addressed. EXPERIMENTAL PROCEDURES (AgCu)(InGa)Se 2 films have been deposited by elemental co-evaporation onto Mo-coated soda lime glass (SLG) substrates at 550 C. In one case, (AgCu)(InGa)Se 2 was also deposited on a substrate with an Al 2O 3 barrier layer between the glass and Mo to reduce Na diffusion from the glass by about 2 orders of magnitude. All films were deposited with time-invariant fluxes to produce homogeneous through-film composition. The films, spanning a composition range with x [Ga]/[In+Ga] 0.3, 0.5, and 0.8 and w [Ag]/[Ag+Cu] from 0 to 0.8, are listed in Table 1 along with their bandgaps calculated from the composition [3]. All films are group I deficient, as indicated by the ratio [Ag+Cu]/[In+Ga], and 2 µm thick. Table 1. Composition ratios of (AgCu)(InGa)Se 2 films, determined from energy dispersive x-ray spectroscopy and optical bandgaps. x w Ag+Cu E g In+Ga (ev) Solar cells were completed with a standard structure of SLG/Mo/(AgCu)(InGa)Se 2/CdS/ZnO/ITO/grids and 0.5 cm /10/$ IEEE
2 total area cells were delineated by mechanical scribing. All results are reported without the benefit of an antireflection layer. Device characterization includes J-V measurements under AM1.5 illumination, temperature dependent J-V measurements, voltage-bias dependent quantum efficiency, and transient photocapacitance (TPC) spectroscopy. Device Performance RESULTS and DISCUSSION Solar cells were fabricated in sets with fixed Ga fraction and increasing Ag fraction. V OC, FF and efficiency (η) are shown in Fig. 1 for the best cell at each composition. In each set, V OC increases with Ag addition as expected for increasing E g. The V OC increase is sub-linear with increasing Ga fraction or bandgap, as with Cu(InGa)Se 2 and other alloys [6,7]. However, greater improvement in V OC with increasing Ag addition is demonstrated by the set with x = 0.8 and E g from ev. The highest values of FF are achieved with Ag alloying and x = 0.3 or 0.5. Values of FF = 80% are particularly noteworthy because there is no bandgap gradient to assist current collection as is created in Cu(InGa)Se 2 deposited with a 3-step evaporation process. This high FF cannot be attributed to changes in parasitic losses such as shunt or series resistances. Instead, it may be an indication of improved minority carrier collection length. The efficiencies with Ag alloying are, within the experimental spread, the same for the samples with x = 0.3 and 0.5 despite the increased E g and V OC with higher Ga. In devices without Ag, η decreased from 16 to 15 %. Diode Analysis The current voltage results shown in Fig. 1 were analyzed using the procedure described previously [8] to determine diode parameters including the forward current (J O), the diode quality factor (A), the series resistance (R S) and the shunt conductance (G) as defined by the diode equation: J = J o exp q(v R s J) J o J L +GV. (1) AkT The diode analysis is partly shown in Fig. 2 where an (AgCu)(InGa)Se 2 sample with x = 0.3 and w = 0.3 is compared to one with x = 0.8 and w = 0.2. The light and dark J-V curves are shown at the top. In the middle, the derivative dv/dj is plotted vs. (J+J SC-GV) -1, where G was determined from the minimum slope dj/dv in reverse bias. The slope on this plot determines A and the intercept determines R S. Finally, the bottom plot is a semilogarithmic plot of (J+J SC-GV) vs. (V-R SJ) where a fit to the linear region at high voltage gives J O and A. A distinct difference between the samples is seen in the second and third plots. The low Ga cell has similar behavior between the light and dark curves over nearly 2 orders of Figure 1. V OC, FF, and efficiency vs. w or devices with x = 0.3, 0.45 and 0.8. magnitude in current while with the high Ga device the light data deviates from the dark data and is not exponential. This is indicative of a voltage dependent collection of photo-generated current J L(V) that the above diode analysis does not take into account [8]. As a result. the light J-V data on the high Ga cell cannot be reliably fit to determine the diode parameters under illumination. QE measurements of the same devices are shown in Fig. 3 at two different voltage biases, 0V and -1V. There is negligible difference in the QE curves of the low Ga cell but a significant increase in QE with reverse voltage bias /10/$ IEEE
3 Figure 2. Diode analysis of (AgCu)(InGa)Se 2 devices with x = 0.3, w = 0.3, and E g = 1.20 ev (left) and E g = 1.55 ev, x = 0.8 and w = 0.2 (right). Data in blue is measured in the dark and data in red under AM1.5 illumination. Figure 3. QE measurements under white light bias at 0V (red) and -1V (blue) for the devices in Fig /10/$ IEEE
4 for the high Ga cell. This bias dependence confirms the interpretation of the voltage dependent current collection loss in the J-V data with high Ga. The J L(V) effect can be quantitatively characterized by calculating the current J QE(V) from the integral over wavelength of the product of the QE and the AM1.5 spectrum and then determining the ratio at different voltage bias. For the devices in this work, this ratio J QE(-1V) / J QE(0V) was determined. All devices with x 0.3 and 0.5, except the device with x = 0.49 and w = 0.77, had values of this ratio in the range This indicates that there is little increase in current with the additional field created by the reverse voltage bias. For the devices with x 0.8 and the excepted cell with x = 0.49 this ratio increases to so the added field has a significant effect on improving collection of photogenerated current. Thus, the voltage-dependent collection, which has been previously noted for wide bandgap Cu(InGa)Se 2 [6], is observed in all the wide bandgap cells with E g > 1.4 ev, with no apparent difference due to Ag alloying. This leads to a loss in FF and, to a lesser extent, J SC [9]. One result of the diode analysis is the determination of the diode quality factor which can be an indicator of the recombination that limits device performance. These values, determined by analysis as in Fig. 2, are shown in Fig. 4. With x = 0.3 or 0.5 comparable values of A were obtained from both the dark and light J-V data. These values of A in the range 1.4 ± 0.2 are typical of wellbehaved Cu(InGa)Se 2 devices. However, with x = 0.8, the dark J-V data gave A 2.0 while A could not be determined for the light case due to the J L(V) shown in Fig. 2. These J-V characteristics are consistent with V OC controlled by Shockley-Read-Hall (SRH) recombination in the space charge region of the absorber layer [10]. A value of A 2 is consistent with the trap states for recombination situated nearer to mid-gap in energy [11]. We have previously characterized the sub-bandgap optical spectrum in Cu(InGa)Se 2 and (AgCu)(InGa)Se 2 using transient photocapacitance measurements on completed devices [4]. In addition to sharper bandtails which suggest better structural quality of the (AgCu)(InGa)Se 2, the TPC measurements reveal a deep defect band which remains located at 0.8 ev above the valence band in all of the alloy samples. This defect is close to midgap for the samples with x = 0.8 so that the SRH recombination is most favorable. Thus this may explain the higher diode factors and relatively lower V OC with the wider bandgap (AgCu)(InGa)Se 2 devices. Sodium Effect The beneficial role of Na in Cu(InGa)Se 2 has been extensively studied though there is still no conclusive understanding of its role in improving device performance. (AgCu)(InGa)Se 2 films were deposited in a single run with x = 0.46, w = 0.22, and E g = 1.32 ev on soda lime glass Figure 4. Diode quality factor A for devices in Fig. 1. and glass with a Na diffusion barrier. The J-V curves are shown in Fig. 5 for the resulting devices. With the reduced Na diffusion V OC decreased by 120 mv and FF decreased from 79 % to 62 %. The decrease in V OC and roll-over behavior are typical of Cu(InGa)Se 2 devices with insufficient Na. To characterize the mechanism controlling V OC and the decrease with low Na, the temperature dependence of V OC was measured [8,12] as shown in Fig. 6. Extrapolation to T = 0K gives the activation energy (E A) for recombination according to V oc = E A q AkT q ln J oo, (2) J L which follows from Eq. 1 with an Arrhenius behavior for the forward current J O. The cell on a SLG substrate has E A = E g which indicates that the dominant recombination occurs in the absorber layer and is again consistent with SRH recombination in the (AgCu)(InGa)Se 2 space charge region. Two differences are seen with the Na barrier substrate. First is a lower E A which has been attributed to interface recombination limiting V OC [12]. Second is a saturation of V OC as temperature decreases which indicates a freezing out of the recombination. CONCLUSIONS (AgCu)(InGa)Se 2 solar cells with a wide range of absorber layer compositions have been characterized and it has been shown that the Ag alloying can produce improved device performance. In particular, while the bandgap in the highest efficiency Cu(InGa)Se 2 cells is ~ 1.15 ev, Ag alloying allows the bandgap to be increased to 1.3 ev with an increase of up to 100 mv in V OC and no loss in device efficiency. With E g > 1.5 ev, V OC, FF, and efficiency all increase with increasing Ag content. The best (AgCu)(InGa)Se 2 cells have FF = 80 % which may be an indication of improved minority carrier collection length, /10/$ IEEE
5 although additional characterization would be needed to confirm this. Such an improvement would be consistent with previously reported indications of improved structural quality of the (AgCu)(InGa)Se 2 films based on optical properties. comparable to that with Cu(InGa)Se 2. The main effect is a decrease in V OC attributed to interface recombination. ACKNOWLEDGEMENTS The authors acknowledge the assistance of Josh Cadoret, Dan Ryan, and Kevin Hart for deposition and device fabrication. This work was supported in part by the DOE Next Generation PV Program. REFERENCES Figure 5. J-V curves in the dark and under AM1.5 illumination for devices on soda lime glass and on glass with a Na diffusion barrier. [1] G. Hanket, J. Boyle and W. Shafarman, Proc. 34 th IEEE PVSC, (2009). [2] T. Nakada, et al., Mater. Res. Soc. Symp. Proc. 865, 2005, p. F [3] J. Boyle, G. Hanket and W. Shafarman, Proc. 34 th IEEE PVSC, Philadelphia, PA, (2009). [4] P. Erslev, et al., Mater. Res. Soc. Symp. Proc. 1165, 1165-M01-07 (2009). [5] P. Paulson, R. Birkmire and W. Shafarman, J. Appl. Phys. 94, 879 (2003). [6] W. Shafarman, R. Klenk and B. McCandless, J. Appl. Phys. 79, 7324 (1996). [7] R. Herberholz, et al., Solar En. Mat. and Solar Cells, 49, 227 (1997). [8] S. Hegedus and W. Shafarman, Prog. in Photovoltaics 12, 155 (2004). [9] M. Eron and A. Rothwarf, Appl. Phys. Lett. 44, 131 (1984). [10] J. Phillips, et al., Phys. Status Solidi B 194, (1996). [11] C. Sah, R. Noyce and W. Shockley, Proc. Inst. Radio Engrs. 45, (1957). [12] C. Thompson, et al. Proc. 33 rd IEEE PVSC (2008). Figure 6. The temperature dependence of V OC for the devices with E g = 1.32 ev in Fig. 5 and extrapolation to T=0 to determine E A. The basic device behavior that controls the (AgCu)(InGa)Se 2 solar cells is comparable to that with Cu(InGa)Se 2. Analysis of J-V and V OC-T measurements are consistent with SRH recombination in the absorber layer as the limiting mechanism for V OC. With E g > 1.5 ev, the increase in V OC is not proportional to the bandgap which may be due to more efficient recombination through trap states close to midgap. The wide bandgap cells are also limited by poor minority carrier collection which primarily reduces FF. Finally the effect of Na in (AgCu)(InGa)Se 2 devices has been shown to be /10/$ IEEE
PHOTOVOLTAICS Fundamentals
PHOTOVOLTAICS Fundamentals PV FUNDAMENTALS Semiconductor basics pn junction Solar cell operation Design of silicon solar cell SEMICONDUCTOR BASICS Allowed energy bands Valence and conduction band Fermi
More informationExplanation of Light/Dark Superposition Failure in CIGS Solar Cells
Mat. Res. Soc. Symp. Proc. Vol. 763 23 Materials Research Society B5.2.1 Explanation of / Superposition Failure in CIGS Solar Cells Markus Gloeckler, Caroline R. Jenkins, and James R. Sites Physics Department,
More informationSolar cells operation
Solar cells operation photovoltaic effect light and dark V characteristics effect of intensity effect of temperature efficiency efficency losses reflection recombination carrier collection and quantum
More informationLecture 5 Junction characterisation
Lecture 5 Junction characterisation Jon Major October 2018 The PV research cycle Make cells Measure cells Despair Repeat 40 1.1% 4.9% Data Current density (ma/cm 2 ) 20 0-20 -1.0-0.5 0.0 0.5 1.0 Voltage
More informationEE 5611 Introduction to Microelectronic Technologies Fall Tuesday, September 23, 2014 Lecture 07
EE 5611 Introduction to Microelectronic Technologies Fall 2014 Tuesday, September 23, 2014 Lecture 07 1 Introduction to Solar Cells Topics to be covered: Solar cells and sun light Review on semiconductor
More informationAvailable online at Energy Procedia 00 (2009) Energy Procedia 2 (2010) E-MRS Spring meeting 2009, Symposium B
Available online at www.sciencedirect.com Energy Procedia 00 (2009) 000 000 Energy Procedia 2 (2010) 169 176 Energy Procedia www.elsevier.com/locate/procedia www.elsevier.com/locate/procedia E-MRS Spring
More informationCharacterization of deep defects in CdSyCdTe thin film solar cells using deep level transient spectroscopy
Thin Solid Films 451 452 (2004) 434 438 Characterization of deep defects in CdSyCdTe thin film solar cells using deep level transient spectroscopy a, a b b b J. Versluys *, P. Clauws, P. Nollet, S. Degrave,
More informationFundamentals of Photovoltaics: C1 Problems. R.Treharne, K. Durose, J. Major, T. Veal, V.
Fundamentals of Photovoltaics: C1 Problems R.Treharne, K. Durose, J. Major, T. Veal, V. Dhanak @cdtpv November 3, 2015 These problems will be highly relevant to the exam that you will sit very shortly.
More informationLab #5 Current/Voltage Curves, Efficiency Measurements and Quantum Efficiency
Lab #5 Current/Voltage Curves, Efficiency Measurements and Quantum Efficiency R.J. Ellingson and M.J. Heben November 4, 2014 PHYS 4580, 6280, and 7280 Simple solar cell structure The Diode Equation Ideal
More informationFebruary 1, 2011 The University of Toledo, Department of Physics and Astronomy SSARE, PVIC
FUNDAMENTAL PROPERTIES OF SOLAR CELLS February 1, 2011 The University of Toledo, Department of Physics and Astronomy SSARE, PVIC Principles and Varieties of Solar Energy (PHYS 4400) and Fundamentals of
More informationImpact of the Geometry Profil of the Bandgap of the CIGS Absorber Layer on the Electrical Performance of the Thin-film Photocell
American Journal of Energy Research, 2018, Vol. 6, No. 1, 23-29 Available online at http://pubs.sciepub.com/ajer/6/1/4 Science and Education Publishing DOI:10.12691/ajer-6-1-4 Impact of the Geometry Profil
More informationUncorrected Proof. Thin-film solar cells made with two different processes for the deposition of Cu(In1 xgax)se2 (CIGS) or
1 1 1 1 1 0 1 Research INTRODUCTION PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS Prog. Photovolt: Res. Appl. 00; :1 Published online in Wiley InterScience (www.interscience.wiley.com). DOI:.0/pip.1
More informationSupplementary Figure 1. Supplementary Figure 1 Characterization of another locally gated PN junction based on boron
Supplementary Figure 1 Supplementary Figure 1 Characterization of another locally gated PN junction based on boron nitride and few-layer black phosphorus (device S1). (a) Optical micrograph of device S1.
More informationApparent quantum efficiency effects in CdTe solar cells
JOURNAL OF APPLIED PHYSICS VOLUME 95, NUMBER 8 15 APRIL 2004 Apparent quantum efficiency effects in CdTe solar cells M. Gloeckler a) and J. R. Sites Department of Physics, Colorado State University, Fort
More informationPhotoelectrochemical characterization of Bi 2 S 3 thin films deposited by modified chemical bath deposition
Indian Journal of Engineering & Materials Sciences Vol. 13, April; 2006, pp. 140-144 Photoelectrochemical characterization of Bi 2 S 3 thin films deposited by modified chemical bath deposition R R Ahire
More informationToward a 1D Device Model Part 1: Device Fundamentals
Toward a 1D Device Model Part 1: Device Fundamentals Lecture 7 9/29/2011 MIT Fundamentals of Photovoltaics 2.626/2.627 Fall 2011 Prof. Tonio Buonassisi 1 Learning Objectives: Toward a 1D Device Model 1.
More informationTraps in MOCVD n-gan Studied by Deep Level Transient Spectroscopy and Minority Carrier Transient Spectroscopy
Traps in MOCVD n-gan Studied by Deep Level Transient Spectroscopy and Minority Carrier Transient Spectroscopy Yutaka Tokuda Department of Electrical and Electronics Engineering, Aichi Institute of Technology,
More informationOrganic Electronic Devices
Organic Electronic Devices Week 4: Organic Photovoltaic Devices Lecture 4.2: Characterizing Device Parameters in OPVs Bryan W. Boudouris Chemical Engineering Purdue University 1 Lecture Overview and Learning
More informationOPTI510R: Photonics. Khanh Kieu College of Optical Sciences, University of Arizona Meinel building R.626
OPTI510R: Photonics Khanh Kieu College of Optical Sciences, University of Arizona kkieu@optics.arizona.edu Meinel building R.626 Announcements Homework #6 is assigned, due May 1 st Final exam May 8, 10:30-12:30pm
More informationSupplemental Discussion for Multijunction Solar Cell Efficiencies: Effect of Spectral Window, Optical Environment and Radiative Coupling
Electronic Supplementary Material (ESI) for Energy & Environmental Science. This journal is The Royal Society of Chemistry 2014 Supplemental Discussion for Multijunction Solar Cell Efficiencies: Effect
More informationComparison of Ge, InGaAs p-n junction solar cell
ournal of Physics: Conference Series PAPER OPEN ACCESS Comparison of Ge, InGaAs p-n junction solar cell To cite this article: M. Korun and T. S. Navruz 16. Phys.: Conf. Ser. 77 135 View the article online
More informationThermionic Current Modeling and Equivalent Circuit of a III-V MQW P-I-N Photovoltaic Heterostructure
Thermionic Current Modeling and Equivalent Circuit of a III-V MQW P-I-N Photovoltaic Heterostructure ARGYRIOS C. VARONIDES Physics and Electrical Engineering Department University of Scranton 800 Linden
More informationLawrence Berkeley National Laboratory Lawrence Berkeley National Laboratory
Lawrence Berkeley National Laboratory Lawrence Berkeley National Laboratory Title Band Gap Energy of Chalcopyrite Thin Film Solar Cell Absorbers Determined by Soft X-Ray Emission and Absorption Spectroscopy
More informationTemperature Dependent Current-voltage Characteristics of P- type Crystalline Silicon Solar Cells Fabricated Using Screenprinting
Temperature Dependent Current-voltage Characteristics of P- type Crystalline Silicon Solar Cells Fabricated Using Screenprinting Process Hyun-Jin Song, Won-Ki Lee, Chel-Jong Choi* School of Semiconductor
More informationPlanar Organic Photovoltaic Device. Saiful I. Khondaker
Planar Organic Photovoltaic Device Saiful I. Khondaker Nanoscience Technology Center and Department of Physics University of Central Florida http://www.physics.ucf.edu/~khondaker W Metal 1 L ch Metal 2
More informationConduction-Band-Offset Rule Governing J-V Distortion in CdS/CI(G)S Solar Cells
Conduction-Band-Offset Rule Governing J-V Distortion in CdS/CI(G)S Solar Cells A. Kanevce, M. Gloeckler, A.O. Pudov, and J.R. Sites Physics Department, Colorado State University, Fort Collins, CO 80523,
More informationChapter 7. Solar Cell
Chapter 7 Solar Cell 7.0 Introduction Solar cells are useful for both space and terrestrial application. Solar cells furnish the long duration power supply for satellites. It converts sunlight directly
More information3.1 Introduction to Semiconductors. Y. Baghzouz ECE Department UNLV
3.1 Introduction to Semiconductors Y. Baghzouz ECE Department UNLV Introduction In this lecture, we will cover the basic aspects of semiconductor materials, and the physical mechanisms which are at the
More informationSupplementary Figure 1 XRD pattern of a defective TiO 2 thin film deposited on an FTO/glass substrate, along with an XRD pattern of bare FTO/glass
Supplementary Figure 1 XRD pattern of a defective TiO 2 thin film deposited on an FTO/glass substrate, along with an XRD pattern of bare FTO/glass and a reference pattern of anatase TiO 2 (JSPDS No.: 21-1272).
More informationThesis. Numerical Modeling of CIGS Solar Cells: Definition of the Baseline and. Explanation of Superposition Failure. Submitted by.
Thesis Numerical Modeling of CIGS Solar Cells: Definition of the Baseline and Explanation of Superposition Failure Submitted by Markus Gloeckler Department of Physics In partial fulfillment of the requirements
More informationAtmospheric pressure Plasma Enhanced CVD for large area deposition of TiO 2-x electron transport layers for PV. Heather M. Yates
Atmospheric pressure Plasma Enhanced CVD for large area deposition of TiO 2-x electron transport layers for PV Heather M. Yates Why the interest? Perovskite solar cells have shown considerable promise
More information3.003 Principles of Engineering Practice
3.003 Principles of Engineering Practice One Month Review Solar Cells The Sun Semiconductors pn junctions Electricity 1 Engineering Practice 1. Problem Definition 2. Constraints 3. Options 4. Analysis
More informationCharge Extraction from Complex Morphologies in Bulk Heterojunctions. Michael L. Chabinyc Materials Department University of California, Santa Barbara
Charge Extraction from Complex Morphologies in Bulk Heterojunctions Michael L. Chabinyc Materials Department University of California, Santa Barbara OPVs Vs. Inorganic Thin Film Solar Cells Alta Devices
More informationModelling thin film solar cells with graded band gap
Modelling thin film solar cells with graded band gap Koen Decock 1, Johan Lauwaert 1,2, Marc Burgelman 1 1 Department of Electronics and Information Systems (ELIS), University of Gent, St-Pietersnieuwstraat
More informationHIGH ENERGY IRRADIATION PROPERTIES OF CdTe/CdS SOLAR CELLS
Presented at the 29 th PVSC, New Orleans (2002) HIGH ENERGY IRRADIATION PROPERTIES OF CdTe/CdS SOLAR CELLS D. L. Bätzner, A. Romeo, M. Döbeli 1, K. Weinert 2, H. Zogg, A. N. Tiwari Thin Film Physics Group,
More informationNovel Inorganic-Organic Perovskites for Solution Processed Photovoltaics. PIs: Mike McGehee and Hema Karunadasa
Novel Inorganic-Organic Perovskites for Solution Processed Photovoltaics PIs: Mike McGehee and Hema Karunadasa 1 Perovskite Solar Cells are Soaring Jul 2013 Grätzel, EPFL 15% Nov 2014 KRICT 20.1%! Seok,
More informationMetal Semiconductor Contacts
Metal Semiconductor Contacts The investigation of rectification in metal-semiconductor contacts was first described by Braun [33-35], who discovered in 1874 the asymmetric nature of electrical conduction
More informationChalcogenide semiconductor research and applications. Tutorial 2: Thin film characterization. Rafael Jaramillo Massachusetts Institute of Technology
Chalcogenide semiconductor research and applications Tutorial 2: Thin film characterization Rafael Jaramillo Massachusetts Institute of Technology Section 1: Measuring composition August 20, 2017 Jaramillo
More informationSupplementary Figure S1. The maximum possible short circuit current (J sc ) from a solar cell versus the absorber band-gap calculated assuming 100%
Supplementary Figure S1. The maximum possible short circuit current (J sc ) from a solar cell versus the absorber band-gap calculated assuming 100% (black) and 80% (red) external quantum efficiency (EQE)
More informationEE 6313 Homework Assignments
EE 6313 Homework Assignments 1. Homework I: Chapter 1: 1.2, 1.5, 1.7, 1.10, 1.12 [Lattice constant only] (Due Sept. 1, 2009). 2. Homework II: Chapter 1, 2: 1.17, 2.1 (a, c) (k = π/a at zone edge), 2.3
More informationSchottky Diodes (M-S Contacts)
Schottky Diodes (M-S Contacts) Three MITs of the Day Band diagrams for ohmic and rectifying Schottky contacts Similarity to and difference from bipolar junctions on electrostatic and IV characteristics.
More informationLEC E T C U T R U E R E 17 -Photodetectors
LECTURE 17 -Photodetectors Topics to be covered Photodetectors PIN photodiode Avalanche Photodiode Photodetectors Principle of the p-n junction Photodiode A generic photodiode. Photodetectors Principle
More informationAvailable online at ScienceDirect. Energy Procedia 92 (2016 ) 24 28
Available online at www.sciencedirect.com ScienceDirect Energy Procedia 92 (2016 ) 24 28 6th International Conference on Silicon Photovoltaics, SiliconPV 2016 Laplacian PL image evaluation implying correction
More information1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00
1 Name: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND Final Exam Physics 3000 December 11, 2012 Fall 2012 9:00-11:00 INSTRUCTIONS: 1. Answer all seven (7) questions.
More information(Co-PIs-Mark Brongersma, Yi Cui, Shanhui Fan) Stanford University. GCEP Research Symposium 2013 Stanford, CA October 9, 2013
High-efficiency thin film nano-structured multi-junction solar James S. cells Harris (PI) (Co-PIs-Mark Brongersma, Yi Cui, Shanhui Fan) Stanford University GCEP Research Symposium 2013 Stanford, CA October
More informationFYS 3028/8028 Solar Energy and Energy Storage. Calculator with empty memory Language dictionaries
Faculty of Science and Technology Exam in: FYS 3028/8028 Solar Energy and Energy Storage Date: 11.05.2016 Time: 9-13 Place: Åsgårdvegen 9 Approved aids: Type of sheets (sqares/lines): Number of pages incl.
More informationSemiconductor Junctions
8 Semiconductor Junctions Almost all solar cells contain junctions between different materials of different doping. Since these junctions are crucial to the operation of the solar cell, we will discuss
More informationElectrons are shared in covalent bonds between atoms of Si. A bound electron has the lowest energy state.
Photovoltaics Basic Steps the generation of light-generated carriers; the collection of the light-generated carriers to generate a current; the generation of a large voltage across the solar cell; and
More informationControl of hot carrier thermalization in type-ii quantum wells: a route to practical hot carrier solar cells
Control of hot carrier thermalization in type-ii quantum wells: a route to practical hot carrier solar cells H. Esmaielpour 1, V. R. Whiteside 1, H. P. Piyathilaka 2, S. Vijeyaragunathan 1, B. Wang 3,
More informationA. K. Das Department of Physics, P. K. College, Contai; Contai , India.
IOSR Journal of Applied Physics (IOSR-JAP) e-issn: 2278-4861.Volume 7, Issue 2 Ver. II (Mar. - Apr. 2015), PP 08-15 www.iosrjournals.org Efficiency Improvement of p-i-n Structure over p-n Structure and
More informationLimiting acceptance angle to maximize efficiency in solar cells
Limiting acceptance angle to maximize efficiency in solar cells Emily D. Kosten a and Harry A. Atwater a,b a Thomas J. Watson Laboratories of Applied Physics, California Institute of Technology, Pasadena,
More informationET3034TUx Utilization of band gap energy
ET3034TUx - 3.3.1 - Utilization of band gap energy In the last two weeks we have discussed the working principle of a solar cell and the external parameters that define the performance of a solar cell.
More informationFabrication and Characteristics Study Ni-nSiC Schottky Photodiode Detector
Fabrication and Characteristics Study Ni-nSiC Schottky Photodiode Detector Muhanad A. Ahamed Department of Electrical, Institution of Technology, Baghdad-Iraq. Abstract In the present work, schottky photodiode
More informationThermally Stable Silver Nanowires-embedding. Metal Oxide for Schottky Junction Solar Cells
Supporting Information Thermally Stable Silver Nanowires-embedding Metal Oxide for Schottky Junction Solar Cells Hong-Sik Kim, 1 Malkeshkumar Patel, 1 Hyeong-Ho Park, Abhijit Ray, Chaehwan Jeong, # and
More informationOrganic Electronic Devices
Organic Electronic Devices Week 4: Organic Photovoltaic Devices Lecture 4.1: Overview of Organic Photovoltaic Devices Bryan W. Boudouris Chemical Engineering Purdue University 1 Lecture Overview and Learning
More informationCOMMERCIAL and record lab cells based on Cu(In,
IEEE JOURNAL OF PHOTOVOLTAICS 1 Electrical Characterization of Defects in Cu-Rich Grown CuInSe 2 Solar Cells Tobias Bertram, Valérie Deprédurand, and Susanne Siebentritt Abstract We study defects in CuInSe
More information(a) (b) Supplementary Figure 1. (a) (b) (a) Supplementary Figure 2. (a) (b) (c) (d) (e)
(a) (b) Supplementary Figure 1. (a) An AFM image of the device after the formation of the contact electrodes and the top gate dielectric Al 2 O 3. (b) A line scan performed along the white dashed line
More informationLight Emitting Diodes
Light Emitting Diodes WWW.LIGHTEMITTINGDIODES.ORG OPTI 500 A FALL 2012, LECTURE 8 Light Emission from Semiconductor Spontaneous radiative transition in direct bandgap semiconductors generate light ~ E
More informationResearch Article Modeling and Optimization of Advanced Single- and Multijunction Solar Cells Based on Thin-Film a-si:h/sige Heterostructure
International Scholarly Research Network ISRN Renewable Energy Volume 211, Article ID 712872, 8 pages doi:1.542/211/712872 Research Article Modeling and Optimization of Advanced Single- and Multijunction
More informationInvestigation of Thin Film Solar Cells on CdS/CdTe Base with Different Back Contacts
CIMTEC Forum 2010 (0) 5 pages (0) Trans Tech Publications, Switzerland Investigation of Thin Film Solar Cells on CdS/CdTe Base with Different Back Contacts G. Khrypunov 1, A. Meriuts 1, H. Klochko 1, T.
More informationNovel High-Efficiency Crystalline-Si-Based Compound. Heterojunction Solar Cells: HCT (Heterojunction with Compound. Thin-layer)
Electronic Supplementary Material (ESI) for Physical Chemistry Chemical Physics. This journal is the Owner Societies 2014 Supplementary Information for Novel High-Efficiency Crystalline-Si-Based Compound
More informationHigh Laser Pulse Repetition Rate Ablation of the CIGS Thin-Film Solar Cells
High Laser Pulse Repetition Rate Ablation of the CIGS Thin-Film Solar Cells E. Markauskas, P. Gečys, G. Račiukaitis Center for Physical Sciences and Technology, Savanoriu Ave. 231, LT-02300, Vilnius, Lithuania
More informationCarrier Transport Mechanisms of a-gaas/ n-si Heterojunctions
Egypt. J. Sol., Vol. (24), No. (2), (2001) 245 Carrier Transport Mechanisms of a-gaas/ n-si Heterojunctions N.I.Aly, A.A.Akl, A.A.Ibrahim, and A.S.Riad Department of Physics, Faculty of Science, Minia
More informationPhotovoltaic cell and module physics and technology. Vitezslav Benda, Prof Czech Technical University in Prague
Photovoltaic cell and module physics and technology Vitezslav Benda, Prof Czech Technical University in Prague benda@fel.cvut.cz www.fel.cvut.cz 1 Outlines Photovoltaic Effect Photovoltaic cell structure
More informationPhotovoltaic cell and module physics and technology
Photovoltaic cell and module physics and technology Vitezslav Benda, Prof Czech Technical University in Prague benda@fel.cvut.cz www.fel.cvut.cz 6/21/2012 1 Outlines Photovoltaic Effect Photovoltaic cell
More informationSEMICONDUCTOR PHYSICS REVIEW BONDS,
SEMICONDUCTOR PHYSICS REVIEW BONDS, BANDS, EFFECTIVE MASS, DRIFT, DIFFUSION, GENERATION, RECOMBINATION February 3, 2011 The University of Toledo, Department of Physics and Astronomy SSARE, PVIC Principles
More informationLecture 12. Semiconductor Detectors - Photodetectors
Lecture 12 Semiconductor Detectors - Photodetectors Principle of the pn junction photodiode Absorption coefficient and photodiode materials Properties of semiconductor detectors The pin photodiodes Avalanche
More informationContinuous, Highly Flexible and Transparent. Graphene Films by Chemical Vapor Deposition for. Organic Photovoltaics
Supporting Information for Continuous, Highly Flexible and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics Lewis Gomez De Arco 1,2, Yi Zhang 1,2, Cody W. Schlenker 2,
More informationThe Role of doping in the window layer on Performance of a InP Solar Cells USING AMPS-1D
IOSR Journal of Engineering (IOSRJEN) ISSN: 2250-3021 Volume 2, Issue 8(August 2012), PP 42-46 The Role of doping in the window layer on Performance of a InP Solar Cells USING AMPS-1D Dennai Benmoussa
More informationChapter 4. Photodetectors
Chapter 4 Photodetectors Types of photodetectors: Photoconductos Photovoltaic Photodiodes Avalanche photodiodes (APDs) Resonant-cavity photodiodes MSM detectors In telecom we mainly use PINs and APDs.
More informationPhotovoltaic Energy Conversion. Frank Zimmermann
Photovoltaic Energy Conversion Frank Zimmermann Solar Electricity Generation Consumes no fuel No pollution No greenhouse gases No moving parts, little or no maintenance Sunlight is plentiful & inexhaustible
More informationNUMERICAL SIMULATION OF THE IDEALITY FACTOR OF NON-IDEAL n-si/p-diamond HETEROJUNCTION DIODES
Digest Journal of Nanomaterials and Biostructures Vol. 5, No 4, October-December 2010, p. 933-937 NUMERICAL SIMULATION OF THE IDEALITY FACTOR OF NON-IDEAL n-si/p-diamond HETEROJUNCTION DIODES K. ALFARAMAWI
More informationCOMPARISON OF VHF, RF AND DC PLASMA EXCITATION FOR a-si:h DEPOSITION WITH HYDROGEN DILUTION
COMPARISON OF, RF AND PLASMA EXCITATION FOR a-si:h DEPOSITION WITH HYDROGEN DILUTION R. PLATZ, C. HOF, S. WIEDER, B. RECH, D. FISCHER, A. SHAH, A. PAYNE and S. WAGNER Department of Electrical Engineering,
More informationSupplementary Figures
Supplementary Figures Supplementary Figure 1. AFM profiles of the charge transport and perovskite layers. AFM Image showing the thickness (y axis) of the layer with respect to the horizontal position of
More informationBoosting the Performance of Solar Cells with Intermediate Band Absorbers The Case of ZnTe:O
Journal of Energy and Power Engineering 11 (2017) 417-426 doi: 10.17265/1934-8975/2017.06.007 D DAVID PUBLISHING Boosting the Performance of Solar Cells with Intermediate Band Absorbers The Case of ZnTe:O
More information5. Semiconductors and P-N junction
5. Semiconductors and P-N junction Thomas Zimmer, University of Bordeaux, France Summary Learning Outcomes... 2 Physical background of semiconductors... 2 The silicon crystal... 2 The energy bands... 3
More informationQuiz #1 Due 9:30am Session #10. Quiz Instructions
2.626/2.627 Fall 2011 Fundamentals of Photovoltaics Quiz #1 Due 9:30am Session #10 Quiz Instructions The undergraduate version of this quiz (2.627) consists of four (4) multipart questions for a point
More informationCIGS und Perowskit Solarzellenforschung an der Empa
CIGS und Perowskit Solarzellenforschung an der Empa Dr. Stephan Buecheler Contact: stephan.buecheler@empa.ch Direct: +4158 765 61 07 Laboratory for Thin Films and Photovoltaics, Empa - Swiss Federal Laboratories
More informationIdeal Diode Equation II + Intro to Solar Cells
ECE-35: Spring 15 Ideal Diode Equation II + Intro to Solar Cells Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette, IN USA lundstro@purdue.edu Pierret, Semiconductor
More informationComparison of Device Performance and Measured Transport Parameters in Widely-Varying Cu(In,Ga) (Se,S) Solar Cells
PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS Prog. Photovolt: Res. Appl. 2006; 14:25 43 Published online 5 October 2005 in Wiley InterScience (www.interscience.wiley.com). DOI: 10.1002/pip.654
More informationDefects and diffusion in metal oxides: Challenges for first-principles modelling
Defects and diffusion in metal oxides: Challenges for first-principles modelling Karsten Albe, FG Materialmodellierung, TU Darmstadt Johan Pohl, Peter Agoston, Paul Erhart, Manuel Diehm FUNDING: ICTP Workshop
More informationChapter 3 The InAs-Based nbn Photodetector and Dark Current
68 Chapter 3 The InAs-Based nbn Photodetector and Dark Current The InAs-based nbn photodetector, which possesses a design that suppresses surface leakage current, is compared with both a commercially available
More informationSupporting Information
Electronic Supplementary Material (ESI) for Energy & Environmental Science. This journal is The Royal Society of Chemistry 7 Supporting Information Interpretation and Evolution of Open- Circuit Voltage,
More informationMODELING THE FUNDAMENTAL LIMIT ON CONVERSION EFFICIENCY OF QD SOLAR CELLS
MODELING THE FUNDAMENTAL LIMIT ON CONVERSION EFFICIENCY OF QD SOLAR CELLS Ա.Մ.Կեչիյանց Ara Kechiantz Institute of Radiophysics and Electronics (IRPhE), National Academy of Sciences (Yerevan, Armenia) Marseille
More informationThe Current Status of Perovskite Solar Cell Research at UCLA
The Current Status of Perovskite Solar Cell Research at UCLA Lijian Zuo, Sanghoon Bae, Lei Meng, Yaowen Li, and Yang Yang* Department of Materials Science and Engineering University of California, Los
More informationET3034TUx External parameters of an ideal solar cell. How can we determine the performance of a solar cell?
ET3034TUx - 3.2.1 - External parameters of an ideal solar cell How can we determine the performance of a solar cell? In the previous block we have introduced the J- V curve of an ideal solar cell and its
More informationDark Current Limiting Mechanisms in CMOS Image Sensors
Dark Current Limiting Mechanisms in CMOS Image Sensors Dan McGrath BAE Systems Information and Electronic Systems Integration Inc., Lexington, MA 02421, USA,
More informationOpto-electronic Characterization of Perovskite Thin Films & Solar Cells
Opto-electronic Characterization of Perovskite Thin Films & Solar Cells Arman Mahboubi Soufiani Supervisors: Prof. Martin Green Prof. Gavin Conibeer Dr. Anita Ho-Baillie Dr. Murad Tayebjee 22 nd June 2017
More informationAnalyze the effect of window layer (AlAs) for increasing the efficiency of GaAs based solar cell
American Journal of Engineering Research (AJER) e-issn: 2320-0847 p-issn : 2320-0936 Volume-4, Issue-7, pp-304-315 www.ajer.org Research Paper Open Access Analyze the effect of window layer (AlAs) for
More informationpn JUNCTION THE SHOCKLEY MODEL
The pn Junction: The Shockley Model ( S. O. Kasap, 1990-001) 1 pn JUNCTION THE SHOCKLEY MODEL Safa Kasap Department of Electrical Engineering University of Saskatchewan Canada Although the hole and its
More informationElectronic Supplementary Information. Recombination kinetics in silicon solar cell under low-concentration: Electroanalytical
Electronic Supplementary Material (ESI) for Physical Chemistry Chemical Physics. This journal is the Owner Societies 2014 Electronic Supplementary Information Recombination kinetics in silicon solar cell
More informationOrigin and Whereabouts of Recombination in. Perovskite Solar Cells Supporting Information
Origin and Whereabouts of Recombination in Perovskite Solar Cells Supporting Information Lidia Contreras-Bernal a, Manuel Salado a,b, Anna Todinova a, Laura Calio b, Shahzada Ahmad b, Jesús Idígoras a,
More informationThe Opto-Electronic Physics That Just Broke the Efficiency Record in Solar Cells
The Opto-Electronic Physics That Just Broke the Efficiency Record in Solar Cells Solar Energy Mini-Series Jen-Hsun Huang Engineering Center Stanford, California Sept. 26, 2011 Owen D. Miller & Eli Yablonovitch
More information(1/4,0,1/4) Cu. In (1/4,0,1/4) x S. (u,1/4,1/8) a/2 In (1/4,1/4,0) a/2. (0,0,0) Cu. a/2
Chapter 1 I-III-VI 2 Chalcopyrite Compound Semiconductors The chalcopyrite compound CuInS 2 and alloys of the CuInS 2 -CuGaS 2 system have been used as absorber layers for thin film solar cells in this
More informationUwe Rau Institut für Energieforschung 5 Photovoltaik- Forschungszentrum Jülich GmbH
Mitglied der Helmholtz-Gemeinschaft Materialforschung für f r DünnschichtphotovoltaikD nnschichtphotovoltaik- Status und neue Entwicklungen Uwe Rau Institut für Energieforschung 5 Photovoltaik- Forschungszentrum
More informationSupplementary Information
Supplementary Information Supplementary Figures Supplementary Figure S1. Change in open circuit potential ( OCP) of 1% W-doped BiVO 4 photoanode upon illumination with different light intensities. Above
More informationOPTIMIZATION OF COPPER INDIUM GALLIUM Di-SELENIDE (CIGS) BASED SOLAR CELLS BY BACK GRADING
Journal of Ovonic Research Vol. 9, No. 4, July August 2013, p. 95-103 OPTIMIZATION OF COPPER INDIUM GALLIUM Di-SELENIDE (CIGS) BASED SOLAR CELLS BY BACK GRADING S. OUEDRAOGO a,b, R. SAM a, F. OUEDRAOGO
More informationGuidelines for more accurate determination and interpretation of effective lifetime from measured quasi-steady-state photoconductance
Guidelines for more accurate determination and interpretation of effective lifetime from measured quasi-steady-state photoconductance 1. Introduction J. Brody, A. Rohatgi, and A. Ristow University Center
More informationChapter 7. The pn Junction
Chapter 7 The pn Junction Chapter 7 PN Junction PN junction can be fabricated by implanting or diffusing donors into a P-type substrate such that a layer of semiconductor is converted into N type. Converting
More informationLow-bandgap small molecules for near-infrared photovoltaic applications
Low-bandgap small molecules for near-infrared photovoltaic applications M. Ballarotto W.N. Herman D.B. Romero Low-bandgap small molecules for near-infrared photovoltaic applications M. Ballarotto, a,b
More information