PIN Silicon Photodiode OP950 Series
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1 Features: Epoxy package Linear response vs. irradiance Fast switching me Choice of wide or extra wide receiving angle Side-looker package Small package style ideal for space-limited applica ons OP955 Description: Each, and OP955 device consists of a PIN silicon photodiode molded in an epoxy packge that allows spectral response from visible to infrared light wavelengths. The side-looking package is designed for easy PCBoard moun ng and space-limited applica ons. The has a 95 wide receiving angle that provides rela vely even recep on over a large area and is mechanically and spectrally matched to OPTEK s GaAs and GaAiAs series of infrared emi ng diodes. The has a 8 very wide receiving angle that provides rela vely even recep on over a large area. The OP955 has a 95 wide receiving angle with a recessed lens, which allows an acceptance half-angle of 45 when measured from the op cal axis to the half power point. Both and OP955 components are 00% produc on tested, using infrared light for close correla on with OPTEK s GaAs and GaAIAs emi ers. Please refer to Applica on Bulle ns 08 and 0 for addi onal design informa on and reliability (degrada on) data. Applications: Non-contact reflec ve object sensor Assembly line automa on Machine automa on Machine safety End of travel sensor Door sensor Ordering Informa on Part Number Sensor Viewing Angle Lead Length 95 Photodiode 8 50 OP RoHS Issue A 08/06 Page
2 Sidelooker Lens Anode Cathode Sidelooker Lens Cathode Anode - CONTAINS POLYSULFONE To avoid stress cracking, we suggest using ND Industries Vibra-Tite for thread-locking. Vibra-Tite evaporates fast without causing structural failure in OPTEK'S molded plas cs. Issue A 08/06 Page
3 OP955 Sidelooker Recessed Lens OP955 Cathode Anode OP955 - CONTAINS POLYSULFONE To avoid stress cracking, we suggest using ND Industries Vibra-Tite for thread-locking. Vibra-Tite evaporates fast without causing structural failure in OPTEK'S molded plas cs. Issue A 08/06 Page 3
4 Absolute Maximum Ratings (T A = 5 C unless otherwise noted) Reverse Breakdown Voltage Electrical Specifications Storage & Opera ng Temperature Range -40 C to +00 C Lead Soldering Temperature [/6 inch (.6 mm) from the case for 5 sec. with soldering iron] 60 C () Reverse Breakdown Voltage 60 V Power Dissipa on 00 mw () Electrical Characteristics (T A = 5 C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS I L Reverse Light Current, OP µa V R = 5 V, E E = mw/cm (3) I D Reverse Dark Current - 60 na V R = 30 V, E E = 0 (4) V (BR) Reverse Breakdown Voltage V I R = 00 μa V F Forward Voltage - -. V I F = ma C T Total Capacitance pf V R = 0 V, E E = 0, f =.0 MHz 60 V t r Rise Time t f Fall Time ns V R = 0 V, λ = 850 nm, R L = 50 Ω Notes: () RMA flux is recommended. Dura on can be extended to 0 seconds maximum when flow soldering. A maximum of 0 grams force may be applied to leads when soldering. () Derate linearly.67 mw/ C above 5 C. (3) The light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 0% over the en re lens surface of the photodiode being tested. (4) Calculate the typical dark current in na using the formula I D = 0 (0.04T A -.5) where T A is ambient temperature in C. Issue A 08/06 Page 4
5 Performance Issue A 08/06 Page 5
PIN Silicon Photodiode OP950 Series
Features: Epoxy package Linear response vs. irradiance Fast switching me Choice of wide or extra wide receiving angle Side-looker package Small package style ideal for space-limited applica ons OP950 OP954
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