SC1302A/B/C/D/E/F Dual High Speed Low-Side MOSFET Driver

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Sharon Randall
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1 POWER MNGEMENT Features Operating Voltage +4.5V to +16.5V Fast rise and fall times (20ns typical with 1000pf load) Dual MOSFET driver Peak drive current 2 propagation delay 40ns 8pin SOIC / MSOP lead free packages. This product is fully WEEE and RoHS compliant Enable/disable control TTLcompatible input Under voltage lockout with hysteresis Low shutdown supply current Over temperature protection ESD protection Dual inverting/noninverting and inverting/noninverting configurations pplications Description SC1302/B/C/D/E/F Dual High Speed LowSide MOSFET Driver The SC1302/B/C/D/E/F family are low cost dual lowside MOSFET drivers. These drivers accept TTLcompatible inputs and are capable of supplying high current outputs (> 2 peak) to external MOSFETs. Fast switching allows operation up to 1 MHz. The SC1302/B/C is available in six configurations: SC1302 is a dual noninverting, SC1302B is a dual inverting and SC1302C alone has an inverting plus one noninverting output. The SC1302D/E/F is the derivative part from SC1302/B/C with pin 1 (EN) and pin 8 (SHDN) internally tied to VCC. n undervoltage lockout circuit guarantees that the driver outputs are low when Vcc is less than 4.5V (typical). n internal temperature sensor shuts down the driver in the event of over temperature. Switchmode power supplies Battery powered applications Solenoid and motor drives Typical pplication Circuit July 13, Semtech Corporation 1

2 Pin Configuration SC1302/D (Dual NonInverting) Ordering Information Device Package Temperature Range (T J ) SC1302ISTRT SC1302BISTRT SC1302CISTRT SC1302DSTRT SOIC8 40 C to +125 C 8Pin SOIC (/D) or MSOP ( only) SC1302ESTRT SC1302FSTRT SC1302B/E (Dual Inverting) SC1302IMSTRT SC1302BIMSTRT MSOP8 40 C to +125 C SC1302CIMSTRT Notes: (1) vailable in tape and reel only. reel contains 2,500 devices. (2) Leadfree package only. Device is WEEE and RoHS compliant. 8Pin SOIC (B/E) or MSOP (B only) SC1302C/F (Inverting+NonInverting) Top Marking Information SOIC /B/C 8Pin SOIC (C/F) or MSOP (C only) Top Marking Information MSOP /B/C X=, B, C yyww = Date Code SOIC D/E/F X=, B, C 302 = SC1302 yyww = Date Code X=D, E, F yyww = Date Code 2

3 bsolute Maximum Ratings Supply Voltage V CC (V) to +20 Input Voltages (V) to V CC Peak Output Currents () Enable Voltage SC1302/B/C (V) to V CC Shutdown Voltage SC1302/B/C (V) to V CC Continuous Power Dissipation (W) Internally limited ESD Protection Level (kv) Recommended Operating Conditions Operating Temperature Range ( C) < T J < +125 Operating Supply Voltage (V) to 16.5 Thermal Information Thermal Resistance, Junction to mbient MSOP ( C/W)..206 Thermal Resistance, Junction to mbient SIOC ( C/W) Maximum Junction Temperature ( C) Storage Temperature Range ( C) to +150 Lead Temperature (Soldering)10s ( C) Exceeding the above specifications may result in permanent damage to the device or device malfunction. Operation outside of the parameters specified in the Electrical Characteristics section is not recommended. DC Electrical Characteristics Unless otherwise specified, 40ºC < T = T J <125 C, V CC = 12V, V IN = 5V, V EN =5V (SC1302/B/C), V SHDN = 5V (SC1302/B/C) Parameter Symbol Conditions Min Typ Max Units Supply Current Quiescent Current I Q V CC < V STRT m Quiescent Current I Q V EN = V SHDN = 3V for SC1302/B/C, V IN = V INB = 3V m Quiescent Current I Q V SHDN = 0V for SC1302/B/C 3 8 μ UnderVoltage Lockout Threshold Voltage V STRT V SHDN = V EN = 3V for SC1302/B/C, V IN = V INB = 3V V Hysteresis V SHDN = V EN = 3V for SC1302/B/C, V IN = V INB = 3V mv Enable for SC1302/B/C Enable Voltage V EN 0 < V EN 2.0 V Disable Voltage V EN 0 < V EN 0.8 V Delay to Output (1) t D_EN EN from low to high 70 ns Delay to Output (1) t D_DIS EN from high to low 55 ns Enable Input Current I EN 0 < V IN μ 3

4 Electrical Characteristics (continued) Unless otherwise specified, 40ºC < T = T J <125 C, V CC = 12V, V IN = 5V, V EN =5V (SC1302/B/C), V SHDN = 5V (SC1302/B/C) Parameter Symbol Conditions Min Typ Max Units Input High Level Input Voltage V IH 0 < V IN 2.0 V Low Level Input Voltage V IL 0 < V IN 0.8 V Input Current I IN 0 < V IN, Noninverting Input(s) of SC1302/C/D/F 0 < V IN, Inverting Input(s) of SC1302B/C/E/F μ 8 μ Output Output Peak Current I PK_SOURCE V OUT = 0.5V, t PW < 10 μs 1600 m I PK_SINK V OUT = V CC 0.5V, t PW < 10 μs 1600 m Shutdown for SC1302/B/C SHDN Input Voltage High V SHDN 2 V SHDN Input Voltage Low V SHDN 0.3 V SHDN Pin current I SHDN V SHDN = 5V μ Thermal Shutdown Over Temperature Trip Point (1) T J_OT 150 C Hysteresis (1) 10 C C Electrical Characteristics Unless otherwise specified, T = T J = 25ºC, V CC =12V, V EN = 5V, C L = 1000pF Parameter Symbol Conditions Min Typ Max Units Rise Time (1) t R See Timing Diagram 20 ns Fall Time (1) t F See Timing Diagram 20 ns Propagation Delay Time (1) t D1 T = 40 C ~ 125 C ns Propagation Delay Time (1) t D2 T = 40 C ~ 125 C ns Notes: (1) Guaranteed by design (2) Negative sign indicates that the input current flows out of the device. 4

5 Typical Characteristics Rise and Fall Time vs. Supply Voltage C L = 1000pF; T = 25 C 25 Rise and Fall Time vs. Capacitive Load V CC = 12V; f = 200kHz; T = 25 C Time (ns) 15 t f t r Time (ns) 40 t f t r Supply Voltage (V) Capacitive Load (pf) Supply Current vs. Capacitive Load Input Pin Current 40 V CC = 12V One Driver Running; T = 25 C Noninverting Supply Currnt (m) kHz 100kHz IIN (u) Inverting Capacitive Load (pf) V IN (V) 5

6 Pin Descriptions Pin # SC1302/D SC1302B/E SC1302C/F Pin Function 1 EN/NC EN/NC EN/NC Enable/Disable Control When the EN is driven low, both outputs are low. When left open, both outputs are low. Enable both drivers by tying EN pin to a voltage greater than 2V. No connection on versions D, E, and F. 2 IN IN IN TTL compatible input to driver When left open, Pin 7 is low. 3 GND GND GND Ground connection 4 INB INB INB TTL compatible input to driver B When left open, Pin 5 is low. 5 OUTB OUTB OUTB Output gate drive B for external MOSFET 6 VCC VCC VCC Supply: +4.5V to +16.5V supply. During UVLO the outputs are held low. 7 OUT OUT OUT Output gate drive for external MOSFET 8 SHDN/NC SHDN/NC SHDN/NC Shutdown pin pply a voltage from 2V to VCC to enable device. Pull below 0.3V for lowpower shut down. No connection on versions D, E, and F. 6

7 Block Diagram EN SC1302 VCC SC1302B IN PRE DRIVER OUT BIS SHDN BNDGP INB BIS OUTB GND SC1302C SC1302D VCC IN PRE DRIVER OUT BIS BNDGP BIS INB PRE DRIVER PRE DRIVER OUTB GND SC1302E SC1302F 7

8 pplications Information General Description The SC1302/B/C/D/E/F is a high speed, high peak current dual MOSFET driver. It is designed to drive power MOSFETs with ultralow rise/fall time and propagation delays. s the switching frequency of PWM controllers is increased to reduce power converters volume and cost, fast rise and fall times are necessary to minimize switching losses. While a discrete solution can achieve reasonable drive capability, implementing delay and other housekeeping functions necessary for safe operation can become cumbersome and costly. The SC1302/B/C/D/E/F presents a total solution for the highspeed, highpower density applications. Wide input supply range of 4.5V to16.5v allows use in battery powered applications as well as distributed power systems. Supply Bypass and Layout 4.7μF to 10μF tantalum bypass capacitor with low ESR (equivalent series resistance) and an additional 0.1μF ceramic capacitor in parallel are recommended as a supply bypass to control switching and supply transients. s with any high speed, high current circuit, proper layout is critical in achieving optimum performance of the SC1302/B/C/D/E/F. ttention should be paid to the proper placement of the driver, the switching MOSFET, and the bypass capacitors. The driver should be placed as close as possible to the external MOSFETs to eliminate the possibility of oscillation caused by trace inductance and the MOSFET gate capacitance. resistor in the range of 10ohm could be used in series with the gate drive to damp the ringing if the drive output path is not short enough. The bypass capacitors should also be placed closely between V CC and GND of the driver. Schottky diode may be used to connect the ground and the output pin to avoid latchups in some applications. Drive Capability and Power Dissipation The SC1302/B/C/D/E/F is able to deliver 1.6 peak current for driving capacitive loads, such as MOSFETs. Fast switching of the MOSFETs significantly reduces switching losses for high frequency applications. Thermal stress is reduced and system reliability is improved. For simplicity, it is assumed that the gate capacitance of a MOSFET is constant. The power delivered from the power supply can be estimated based on this simplification. The energy needed to charge the capacitor is given by the following equation E ON 1 C V 2 2 where C is the load capacitance and V is the output voltage swing of the driver. During turn off, the same amount of energy is dumped to the ground. Therefore, the energy dissipated in one switching cycle is: E TOTL = C x V 2 The power dissipation due to the gate driving actions is given by: P GTE = f x C x V 2 where, f is the switching frequency. With V CC = 12V, C = 1nF and f = 200kHz, the power dissipation per output is: P GTE =(200kHz) x (1nF) x (12) 2 = 29mW The corresponding supply current is: P I V GTE CC 29mW 12V 2.4m Thermal Information The driver s junction temperature must be kept within the rated limit at any time. The application system has to effectively remove the heat generated in the driver in order for proper functions and performance. If the junction temperature reaches 150 C, the internal protection circuit will be triggered to shut down the gate driver. The power dissipation of the SC1302/B/C/D/E/F should be derated according to the following formula: 125 C T PowerDissipation j where T = ambient temperature. 8

9 Timing Diagram 5V 90% Input 0V 10% t R t F Non inverting Output SC % 90% 90% 10% Inverting Output SC1302B t F t R 90% 90% 10% 10% t D1 t D2 9

10 Outline Drawing MSOP8 DIMENSIONS 2X E/2 PIN 1 INDICTOR ccc C 2X N/2 TIPS N 1 2 B e/2 e E1 D E DIM 1 2 b c D E1 E e L L1 N 01 aaa bbb ccc MIN NOM MX MIN NOM MX BSC 4.90 BSC.026 BSC 0.65 BSC (.037) (.95) INCHES MILLIMETERS aaa C D H SETING PLNE C 2 1 bxn bbb C B D GGE PLNE 0.25 (L1) L 01 c DETIL SIDE VIEW SEE DETIL NOTES: 1. CONTROLLING DIMENSIONS RE IN MILLIMETERS (NGLES IN DEGREES). 2. DTUMS ND B TO BE DETERMINED T DTUM PLNE H 3. DIMENSIONS "E1" ND "D" DO NOT INCLUDE MOLD FLSH, PROTRUSIONS OR GTE BURRS. 4. REFERENCE JEDEC STD MO187, VRITION. 10

11 Land Pattern MSOP8 X DIMENSIONS DIM INCHES MILLIMETERS C (.161) (4.10) (C) G Y Z G P X Y Z P NOTES: 1. THIS LND PTTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MNUFCTURING GROUP TO ENSURE YOUR COMPNY'S MNUFCTURING GUIDELINES RE MET. 11

12 Outline Drawing SO8 DIMENSIONS 2X E/2 ccc C 2X N/2 TIPS N 1 2 D e e/2 B E1 D E DIM 1 2 b c D E1 E e h L L1 N 01 aaa bbb ccc MIN NOM MX MIN NOM MX BSC.050 BSC BSC 1.27 BSC (.041) (1.04) 0 INCHES 8 0 MILLIMETERS 0.20 aaa SETING PLNE C C 1 bxn 2 H h h bbb C B D GGE PLNE c SIDE VIEW SEE DETIL 0.25 DETIL L (L1) 01 NOTES: 1. CONTROLLING DIMENSIONS RE IN MILLIMETERS (NGLES IN DEGREES). 2. DTUMS ND B TO BE DETERMINED T DTUM PLNE H 3. DIMENSIONS "E1" ND "D" DO NOT INCLUDE MOLD FLSH, PROTRUSIONS OR GTE BURRS. 4. REFERENCE JEDEC STD MS012, VRITION. 12

13 Land Pattern SO8 X DIM INCHES DIMENSIONS MILLIMETERS C (.205) (5.20) (C) G Z G P X Y Y Z P NOTES: THIS LND PTTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MNUFCTURING GROUP TO ENSURE YOUR COMPNY'S MNUFCTURING GUIDELINES RE MET. REFERENCE IPCSM782, RLP NO Contact Information Semtech Corporation Power Management Products Division 200 Flynn Road, Camarillo, C Phone: (805) Fax: (805)

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