Advances in Capaci-ve Touch Switches Steve Sheard
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1 Advances in Capaci-ve Touch Switches Steve Sheard
2 Agenda Human Body Interface Touch Switch Technologies Touch Switch Markets Capaci>ve Touch Switch Micro vs ASSP Introduc>on to Capacitance Sensing Self Sensing Differen>al Mutual Sensing Advantages of Differen>al Mutual Sensing Example system
3 Human Body Interface Mechanical switches Moving parts, Bulky, Short life, Difficult to seal, Difficult to illuminate Membrain switches Moving parts, Low profile, Design Flexibility, Mul>ple layers, Low power, Special adhesives, Low cost, Illuminate with LEDs or EL, Tac>le feedback Touch switches No moving parts, Rigid or flexible face plate, Low profile, Design Flexibility, Rigid or Flexible PCB, Two layers, Low power, no adhesives, cost effec>ve, dynamic configura>on, Proximity sensing, Harsh environments, Illuminate with LEDs or EL, Hap>c feedback, Vandal Proof
4 Touch Switch Technologies Capacitance - The switch works using body capacitance to change a capacitor Resis>ve The switch works using body resistance to change a resistance path Piezo - The switch works using piezoelectric ceramic material to change a voltage
5 Focused Applica>ons Touch Switch Wheel Slider Touch Interface Touch Screen Touch Pad
6 Touch & Proximity Switch Markets Touch Switch: Control switches Key pad entry Slider control Proximity Switch: Remote switch Wake- up detec>on Content detec>on Cooking appliances Jacuzzi Beverage Dispenser White goods Medical Instruments Printer Projector Notebook PC OA/FA Security Remote control TV
7 Comparison of Micro Based vs Dedicated ASSP Advantage Disadvantage Application Specific Standard Product (ASSP) Micro Based System Program not required Simple replacement Wide temperature range: -40 to +105 Reduce development time Simple selection of parameters Automatic calibration Flexible design Dedicated IC Programming required Needs circuit architecture and design Long development time Cref Cin0 Pout0 Pout1 Pout2 Cin1 Pout3 Cin2 Cin3 Cin4 MUX 1st AMP 2nd AMP A/D CONVERTER Pout4 Pout5 Pout6 Cin5 Pout7 Cin6 Cdrv Cin7 ncs SCL/SCK SDA/SI I 2 C/SPI CONTROL LOGIC ERROR INTOUT nrst GAIN SA/SO POR OSCILLATOR VDD VSS Block diagram of typical ASSP Block diagram of a Micro Based System
8 Introduction to Capacitance Charge Charged with electricity? Rub a balloon, push a shopping cart. Feel a spark - get close to a car, a kitchen appliance, another person. Body is working as a capacitor and has stored electrical charge Discharge of electricity SPARK!!!
9 The parameters of capacitance S C= ε d S ε C = Capacitance ε = Dielectric between plates S = Surface Area d = Distance between plates S d ε d
10 The simplified model of self- sensing There are two capacitances, S1 and S2. When they are connected in parallel, S1 and S2 are added. The total area S becomes S=S1+S2. The capacitance C is increased. S1 ε S=S1+S2 d S2 C=ε(S/d) Finger
11 S d Self- sensing Self- sensing: Sensing capacitance is formed between the sensor pad and the ground. When the object like a finger comes closer, its capacitance increases. finger Cp(parasi>c) Field ground PCB ground
12 Basic principle of self- sensing With a constant current being applied; as the finger approaches the capacitance increases resul>ng in the charge >me increases. V[V] i V=(i/C)t d S ΔC Vt Threshold Voltage V Cp C=Cp+ΔC decrease t1 t2 t3 t[s] C Increase t=(vt/i)c
13 Basic principle of self- sensing With a constant current being applied; as the finger approaches the capacitance increases resul>ng in the charge >me increases. V[V] i V=(i/C)t d S ΔC Vt Threshold Voltage V Cp C=Cp+ΔC decrease t1 t2 t3 t[s] C Increase t=(vt/i)c
14 Basic principle of self- sensing With a constant current being applied; as the finger approaches the capacitance increases resul>ng in the charge >me increases. V[V] i V=(i/C)t d S ΔC Vt Threshold Voltage V Cp C=Cp+ΔC decrease t1 t2 t3 t[s] C Increase t=(vt/i)c
15 Differen>al Mutual- sensing Differen>al Mutual- sensing: Sensing capacitance is formed between the sensor pad and the excita>on pad. When a object like finger comes close, its capacitance decreases. finger Field ground S ε d Cp PCB ground
16 The simplified model of differen>al mutual sensing When a material is inserted, S is decreased. Hence, Capacitance is decreased. finger S S ε finger C=ε(S/d) d
17 Basic principle of mutual sensing As a finger approaches the sensor input pad (CinX), the electric field is interrupted. The capacitance between Cdrv and CinX is decreased by ΔC. Vout[V] Vout=(ΔC/Cf)VDD C C- ΔC Vt ΔC1 ΔC2 ΔC3 =0 Threshold Voltage ΔC[F] Cref Cdrv CinX C Cf VDD Cdrv Cref CinX + - Vout VSS C- ΔC Capaci>ve Sensors Cf
18 Basic principle of mutual sensing As a finger approaches the sensor input pad (CinX), the electric field is interrupted. The capacitance between Cdrv and CinX is decreased by ΔC. Vout[V] Vout=(ΔC/Cf)VDD C C- ΔC Vt ΔC1 ΔC2 ΔC3 =0 Threshold Voltage ΔC[F] Cref Cdrv CinX C Cf VDD Cdrv Cref CinX + - Vout VSS C- ΔC Capaci>ve Sensors Cf
19 Basic principle of mutual sensing As a finger approaches the sensor input pad (CinX), the electric field is interrupted. The capacitance between Cdrv and CinX is decreased by ΔC. Vout[V] Vout=(ΔC/Cf)VDD C C- ΔC Vt ΔC1 ΔC2 ΔC3 =0 Threshold Voltage ΔC[F] Cref Cdrv CinX C Cf VDD Cdrv Cref CinX + - Vout VSS C- ΔC Capaci>ve Sensors Cf
20 Difference of touch sensing method Self - Sensing Mutual (Differen-al) Sensing Cf C0 C0 Mutual Differen-al Sensing provides an advantage through improved sensi-vity for a large dynamic range.
21 Superior Noise Rejec>on: Differen>al amp differen'al CV amplifier VDD VSS Cdrv Capaci>ve Sensors C C- ΔC Cp Cref CinX Cp + - Cf Cf Vout Superior noise rejec>on allows flexible sensor paeern design with long sensor traces.
22 Long sensor trace Applica-on Superior Cp cancella>on provides design flexibility by allowing long sensor trace: > 500mm. The maximum length is 500mm. Sensor IC
23 Superior Noise Rejec>on Varia>ons in the output data when common- mode noise is applied. A/D Output Data (LSB) Single detection Differential detection Measurement point N Opera>on with gloves No special adhesives Cabinet top (1mm thickness) Substrate 5.0 mm Air gap LED Switch layout
24 An example of touch switch design on PCB Cdrv Cref Cin + - Environment is very similar for Cref and Cin. Allows system to con-nuously calibrate itself, allowing sensi-vity in Femtofarads, resolu-on Cdrv Touch sensor Pad structure Cin
25 Proximity sensor with Analog output Analog output of sensor pad Threshold Set Data changes linear in propor-on to the distance because the sensi-vity is very high.
26 Example System Remote security system keypad Operate for 2 years on 1 C- Cell Baeery Current draw under 50 ua Wake up once per second and check for proximity Proximity detected at 6 inches Reduce sensi>vity of keypad for individual key opera>on with gloves 10 ms switch detec>on Waterproof keypad with no false triggers in rain
27 ON Semiconductor Differen-al Mutual Detec-on Touch Technology " Touch " Long sensor trace > 500 mm Superior parasi>c capacitance Cancella>on Superior Noise Immunity " Adhesive free, Air gap LC717A00 & LC717A10 Superior Noise Rejec>on " Proximity > 50 mm
28 Ques>ons? Thank you
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