Designing Information Devices and Systems I Spring 2017 Babak Ayazifar, Vladimir Stojanovic Midterm 2. Exam location: 145 Dwinelle, last SID# 2

Size: px
Start display at page:

Download "Designing Information Devices and Systems I Spring 2017 Babak Ayazifar, Vladimir Stojanovic Midterm 2. Exam location: 145 Dwinelle, last SID# 2"

Transcription

1 EECS 16A Designing Information Devices and Systems I Spring 2017 Babak Ayazifar, Vladimir Stojanovic Midterm 2 Exam location: 145 Dwinelle, last SID# 2 PRINT your student ID: PRINT AND SIGN your name:, (last) (first) (signature) PRINT your Unix account login: ee16a- PRINT your discussion section and GSI (the one you attend): Name and SID of the person to your left: Name and SID of the person to your right: Name and SID of the person in front of you: Name and SID of the person behind you: 1. What do you enjoy about 16A? (1 point) 2. What do you dislike about 16A? (1 point) Do not turn this page until the proctor tells you to do so. You may work on the questions above. EECS 16A, Spring 2017, Midterm 2 1

2 3. Simplifying Resistor Networks (6 Points) Determine the equivalent resistance between points A and B in the circuit shown below. You may use the parallel operator in your final answer. A R 4 R 3 B R eq = ( R 3 ) R 4 4. Capacitors (6 Points) For the circuit given below, determine the voltage across each capacitor at steady state. = 2, C 2 = C 1, and V s = 3V. V s C 1 V 1 C 2 V 2 We label the circuit as follows: I C1 C 1 V 1 V s A V x I x I C2 B V A C 2 V 2 EECS 16A, Spring 2017, Midterm 2 2

3 In steady state, I C1 = 0 I C2 = 0 By KCL at node B, I x = 0 which implies V x = 0 V A = V B Since I x = 0, then by the voltage divider equation. By KVL: V A = V s V 2 = V A V x = V A = V s V 1 = V s V 2 = V s Therefore, V 1 = 1V and V 2 = 2V. EECS 16A, Spring 2017, Midterm 2 3

4 5. Ladder Nodal (8 Points) B A V 2 V 1 Use nodal analysis to write equations for each node A and B. Let = 1Ω, = 2Ω, and leave your expressions in terms of V 1, V 2,,, V A and V B. Do not simplify. For node A: 0 = V A (V A V 1 ) (V A V B ) R ( V 1 = V A 1 1 ) V B ( 1 ) For node B: 0.5V 1 = 2V A V B 0 = (V B V 2 ) (V B V A ) R ( V 2 = V B 1 ) ( ) V A 1R1 0.5V 2 = V A 1.5V B EECS 16A, Spring 2017, Midterm 2 4

5 6. Flows Through Circuits (12 Points) u 1 I s1 u2 i 1 I s2 i 2 u 3 (a) (2 points) Redraw the circuit shown above with all current sources nulled. u 1 u2 i 1 i 2 u 3 (b) (5 points) Translate your circuit from part (a) into a graph and write its incidence matrix F. The incidence matrix for the above graph is: [ ] F = u 1 i 1 u 2 i 2 u 3 (c) (5 points) Recall that KCL can be stated as F T i = 0 when all the sources are turned off. However, for circuits containing independent current sources, the equation is modified to be F T i = b. Find b such that F T i = b represents the KCL constraint at every node in the above circuit. EECS 16A, Spring 2017, Midterm 2 5

6 I s1 flows into node 1 and out of node 3. I s2 flows into node 2 and out of node 3. Therefore, the vector b is: b = I s1 I s2 I s1 I s2 EECS 16A, Spring 2017, Midterm 2 6

7 7. One Norton At A Time! (12 Points) I s2 A R 3 I s R 3 I s1 R 4 V 4 B (a) (b) (a) (2 points) Given the circuit labeled (a), draw the Thevenin equivalent circuit for I s = 1 5 A and R 3 = 20Ω and determine V th and R th. Note that this is a Norton equivalent circuit. We can use V th = I no R no and R th = R no to determine the Thevenin equivalent circuit. V th = V AB = I s R 3 = 4V R th = R 3 = 20Ω V th R th (b) (5 points) Redraw the circuit labeled (b) with the following restrictions: you must use only voltage sources and the given four resistors. Determine the value of the voltage sources given = 30Ω, = 10Ω, R 3 = 20Ω, R 4 = 10Ω, I s1 = 1 3 A, and I s2 = 1 5 A. Circuits drawn without,,r 3, and R 4 will not be given full credit. Do not combine resistors. I s1 and can be transformed from a Norton equivalent circuit to a Thevenin equivalent circuit. We can do the same for I s2 and R 3. V s2 R3 V s1 R 4 V 4 EECS 16A, Spring 2017, Midterm 2 7

8 V s1 = 10V and V s2 = 4V (c) (5 points) Calculate the voltage drop across R 4. R V 4 = (10V 4V ) 4 R 3 R 4 = 140V 70 = 2V EECS 16A, Spring 2017, Midterm 2 8

9 8. Equivalent Circuits (13 Points) A I s B R 3 R 4 Find V th and R th with respect to nodes A and B for the following circuit in terms of the variables I s,,,r 3, and R 4. You may leave the parallel operator in your final answer. The Thevenin voltage is the voltage across. To find the V R2 we begin by finding the current through using the current divider formula. I R2 = (R 3 R 4 ) I s V th = V R2 = I R2 = (R 3 R 4 ) I s To find the Thevenin resistance, we begin by removing all independent source. The circuit has been drawn below. A B R 3 R 4 From the above circuit, the Thevenin Resistance R th = ( (R 3 R 4 )) EECS 16A, Spring 2017, Midterm 2 9

10 9. Resist the Touch (16 Points) In this question, we will be re-examining the 2-dimensional resistive touchscreen previously discussed in both lecture and lab. The general touch screen is shown in Figure 1 (a). The touchscreen has length L and width W and is composed of a rigid bottom layer and a flexible upper layer. The strips of a single layer are all connected by an ideal conducting plate on each side. The upper left corner is position (1,1). The top layer has N vertical strips of denoted by y 1,y 2,...,y N. These vertical strips have cross sectional area A, and resistivity ρ y. The bottom layer has N horizontal strips denoted by x 1,x 2,...,x N. These horizontal strips all have cross sectional area A as well, and resistivitiy ρ x. Assume that all top layer resistive strips and bottom layer resistive strips are spaced apart equally. Also assume that all resistive strips are rectangular as shown by Figure 1 (b). (a) 2-D Resistive Touch Screen (b) 3D Model of a Single Resistive Strip Figure 1: (a) (3 points) Figure 1(b) shows a model for a single resistive strip. Find the equivalent resistance R y for the vertical strips and R x for the horizontal strips, as a function of the screen dimensions W and L, the respective resistivities, and the cross-sectional area A. The equation for resistance is R = ρl A Therefore, R y = ρ yl A. For the bottom, R x = ρ xw A. EECS 16A, Spring 2017, Midterm 2 10

11 (b) (5 points) Consider a 2 2 example for the touchscreen circuit. Figure 2: 2 2 Case of the Resistive Touchscreen Given that V s = 3V, R x = 2000Ω, and R y = 2000Ω, draw the equivalent circuit for when the point (2,2) is pressed and solve for the voltage at terminal V O2 with respect to ground. Since all of the resistive strips are equally spaced, the resistor above point (2,2) on strip y 2 becomes 2 3 R y and the resistor below point (2,2) on strip y 2 becomes 1 3 R y. The bottom layer resistors, although they must be drawn in the equivalent circuit, do not affect the voltage at V O1 as they are open circuits. V s 2 3 R y 1 3 R y 1 3 R x V O2 Observing that the resistive strips form a voltage divider, we can determine V O2 using the voltage divider equation. 1 3 Therefore, V O2 = V (2,2) = V R y s 1 3 R y 2 3 R = 1 y 3 V s = 1V. (c) (8 points) Suppose a touch occurs at coordinates (i, j) in Figure 1(a). Find an expression for V O2 as a function of V s, N, i, and j. V O2 = N 1 i N 1 R y R y = N 1 i N 1 V s V s EECS 16A, Spring 2017, Midterm 2 11

12 10. MEMS Sensor (20 Points) Above is the cross section of a MEMS accelerometer, which consists of a T-shaped mass between two sidewalls. When the device accelerates, the T structure, which is held up by springs, displaces up or down. Assume that all the structures are made of metal separated by air, and that the only relevant capacitances in this problem are parallel plate capacitances. (a) (4 points) Suppose both sidewalls are connected together with an ideal wire. Find the capacitance between the stem of the T mass and a sidewall as a function of x, the displacement of the T mass. Find the net capacitance between the two terminals N 1 and N 2 assuming the only parallel plate capacitance is that of the T mass stem and sidewall. The capacitance between the T and a sidewall is found using the equation for physical capacitance. Wx C = ε o d There are two such capacitors in the above structure, and the net capacitance is 2C. EECS 16A, Spring 2017, Midterm 2 12

13 V out V s C a C re f The above circuit is designed to measure the displacement of the T structure. It cycles through two phases, which are depicted in the diagram below. For this problem, you may assume that switching is controlled through a microcontroller and that all capacitors reach steady state during each phase. Furthermore, assume that the T mass does not move during the measurement cycle and all capacitors are initially uncharged. V out V out V s C a C re f V s C a C re f Phase 1 Phase 2 (b) (8 points) The circuit above is designed to measure the change in capacitance and to output a voltage. The phases of its operation are shown above. Find V out in Phase 2 as a function of C a and C re f. In Phase 1, the charge on C re f is not connected to a voltage source, so it has no additional charge on it. Since initially all capacitors were uncharged, the charge on C re f is 0. C a is connected to a voltage source, and has charge C a V s on it. We use Q tot to denote the total charge on the nodes that will be shared. Q tot,1 = Q a Q re f = C a V s 0 In Phase 2, the two capacitor charge share. Since they are now connected in parallel, they have the same voltage, V out across them. Q tot,2 = Q a Q re f = (C a C re f )V out Q tot,2 = Q tot,1 (C a C re f )V out = C a V s C a V out = V s C a C re f (c) (8 points) Let V out [i] denote V out at the ith measurement cycle. Suppose the circuit had been running for k cycles. What is V out [k] in terms of V out [k 1], C a and C re f? Here, unlike before there is some charge on C re f because C re f is not being discharged. EECS 16A, Spring 2017, Midterm 2 13

14 The charge on C re f in Phase 1 can be found using the voltage at cycle k-1. Q tot,1 = C a V s C re f V out [k 1] Q tot,2 = C a V out [k] C re f V out [k] Q tot,2 = Q tot,1 C a V out [k] C re f V out [k] = C a V s C re f V out [k 1] C a C re f V out [k] = V s V out [k 1] C a C re f C a C re f EECS 16A, Spring 2017, Midterm 2 14

Designing Information Devices and Systems I Summer 2017 D. Aranki, F. Maksimovic, V. Swamy Midterm 2. Exam Location: 100 Genetics & Plant Bio

Designing Information Devices and Systems I Summer 2017 D. Aranki, F. Maksimovic, V. Swamy Midterm 2. Exam Location: 100 Genetics & Plant Bio EECS 16A Designing Information Devices and Systems I Summer 2017 D. Aranki, F. Maksimovic, V. Swamy Midterm 2 Exam Location: 100 Genetics & Plant Bio PINT your student ID: PINT AND SIGN your name:, (last

More information

Designing Information Devices and Systems I Fall 2017 Midterm 2. Exam Location: 150 Wheeler, Last Name: Nguyen - ZZZ

Designing Information Devices and Systems I Fall 2017 Midterm 2. Exam Location: 150 Wheeler, Last Name: Nguyen - ZZZ EECS 16A Designing Information Devices and Systems I Fall 2017 Midterm 2 Exam Location: 150 Wheeler, Last Name: Nguyen - ZZZ PINT your student ID: PINT AND SIGN your name:, (last name) (first name) (signature)

More information

Designing Information Devices and Systems I Spring 2016 Elad Alon, Babak Ayazifar Midterm 2. Exam location: 145 Dwinelle, last SID# 2

Designing Information Devices and Systems I Spring 2016 Elad Alon, Babak Ayazifar Midterm 2. Exam location: 145 Dwinelle, last SID# 2 EECS 16A Designing Information Devices and Systems I Spring 2016 Elad Alon, Babak Ayazifar Midterm 2 Exam location: 145 Dwinelle, last SID# 2 PRINT your student ID: PRINT AND SIGN your name:, (last) (first)

More information

Designing Information Devices and Systems I Spring 2017 Babak Ayazifar, Vladimir Stojanovic Midterm 1

Designing Information Devices and Systems I Spring 2017 Babak Ayazifar, Vladimir Stojanovic Midterm 1 EECS 16A Designing Information Devices and Systems I Spring 2017 Babak Ayazifar, Vladimir Stojanovic Midterm 1 Exam location: 2050 VLSB, Last Name: Surpenant-Zzz PRINT your student ID: PRINT AND SIGN your

More information

Designing Information Devices and Systems I Fall 2016 Babak Ayazifar, Vladimir Stojanovic Final Exam

Designing Information Devices and Systems I Fall 2016 Babak Ayazifar, Vladimir Stojanovic Final Exam EECS 16A Designing Information Devices and Systems I Fall 2016 Babak Ayazifar, Vladimir Stojanovic Final Exam Exam location: 1 Pimental, Last Name: A-Ketsamanian PRINT your student ID: PRINT AND SIGN your

More information

Designing Information Devices and Systems II Spring 2016 Anant Sahai and Michel Maharbiz Midterm 2

Designing Information Devices and Systems II Spring 2016 Anant Sahai and Michel Maharbiz Midterm 2 EECS 16B Designing Information Devices and Systems II Spring 2016 Anant Sahai and Michel Maharbiz Midterm 2 Exam location: 145 Dwinelle (SIDs ending in 1 and 5) PRINT your student ID: PRINT AND SIGN your

More information

Designing Information Devices and Systems I Fall 2015 Anant Sahai, Ali Niknejad Final Exam. Exam location: RSF Fieldhouse, Back Left, last SID 6, 8, 9

Designing Information Devices and Systems I Fall 2015 Anant Sahai, Ali Niknejad Final Exam. Exam location: RSF Fieldhouse, Back Left, last SID 6, 8, 9 EECS 16A Designing Information Devices and Systems I Fall 2015 Anant Sahai, Ali Niknejad Final Exam Exam location: RSF Fieldhouse, Back Left, last SID 6, 8, 9 PRINT your student ID: PRINT AND SIGN your

More information

Designing Information Devices and Systems I Spring 2018 Homework 7

Designing Information Devices and Systems I Spring 2018 Homework 7 EECS 6A Designing Information Devices and Systems I Spring 08 Homework 7 This homework is due March, 08, at 3:59. Self-grades are due March 5, 08, at 3:59. Submission Format Your homework submission should

More information

Designing Information Devices and Systems I Spring 2019 Midterm 2. Exam Location: Cory 521 (DSP)

Designing Information Devices and Systems I Spring 2019 Midterm 2. Exam Location: Cory 521 (DSP) 1 EECS 16A Designing Information Devices and Systems I Spring 2019 Midterm 2 Exam Location: Cory 521 (DSP) PRINT AND SIGN your name:, (last name) (first name) (signature) PRINT time of your Monday section

More information

Designing Information Devices and Systems I Fall 2016 Babak Ayazifar, Vladimir Stojanovic Midterm 1. Exam location: 145 Dwinelle, last SID# 2

Designing Information Devices and Systems I Fall 2016 Babak Ayazifar, Vladimir Stojanovic Midterm 1. Exam location: 145 Dwinelle, last SID# 2 EECS 16A Designing Information Devices and Systems I Fall 2016 Babak Ayazifar, Vladimir Stojanovic Midterm 1 Exam location: 145 Dwinelle, last SID# 2 PRINT your student ID: PRINT AND SIGN your name:, (last)

More information

Designing Information Devices and Systems I Fall 2016 Babak Ayazifar, Vladimir Stojanovic Midterm 1. Exam location: 2050 VLSB, Last Name: Tong-Zzz

Designing Information Devices and Systems I Fall 2016 Babak Ayazifar, Vladimir Stojanovic Midterm 1. Exam location: 2050 VLSB, Last Name: Tong-Zzz EECS 16A Designing Information Devices and Systems I Fall 2016 Babak Ayazifar, Vladimir Stojanovic Midterm 1 Exam location: 2050 VLSB, Last Name: Tong-Zzz PRINT your student ID: PRINT AND SIGN your name:,

More information

Designing Information Devices and Systems I Spring 2015 Note 11

Designing Information Devices and Systems I Spring 2015 Note 11 EECS 16A Designing Information Devices and Systems I Spring 2015 Note 11 Lecture notes by Edward Wang (02/26/2015). Resistors Review Ohm s law: V = IR Water pipe circuit analogy: Figure 1: Water analogy

More information

EECS 16A: SPRING 2015 MIDTERM 2

EECS 16A: SPRING 2015 MIDTERM 2 University of California College of Engineering Department of Electrical Engineering and Computer Sciences E. Alon, G. Ranade, B. Ayazifar, Thurs., Apr. 9, 2015 C. Tomlin, V. Subramanian 2:00-3:30pm EECS

More information

Designing Information Devices and Systems I Fall 2018 Lecture Notes Note Resistive Touchscreen - expanding the model

Designing Information Devices and Systems I Fall 2018 Lecture Notes Note Resistive Touchscreen - expanding the model EECS 16A Designing Information Devices and Systems I Fall 2018 Lecture Notes Note 13 13.1 Resistive Touchscreen - expanding the model Recall the physical structure of the simple resistive touchscreen given

More information

Designing Information Devices and Systems I Fall 2015 Anant Sahai, Ali Niknejad Final Exam. Exam location: You re Done!!

Designing Information Devices and Systems I Fall 2015 Anant Sahai, Ali Niknejad Final Exam. Exam location: You re Done!! EECS 6A Designing Information Devices and Systems I Fall 205 Anant Sahai, Ali Niknejad Final Exam Exam location: You re Done!! PRINT your student ID: PRINT AND SIGN your name:, (last) (first) (signature)

More information

Designing Information Devices and Systems I Fall 2016 Babak Ayazifar, Vladimir Stojanovic Final Exam. Exam location: 145 Dwinelle, last SID# 2

Designing Information Devices and Systems I Fall 2016 Babak Ayazifar, Vladimir Stojanovic Final Exam. Exam location: 145 Dwinelle, last SID# 2 EECS 6A Designing Information Devices and Systems I Fall 06 Babak Ayazifar, Vladimir Stojanovic Final Exam Exam location: 45 Dwinelle, last SID# PRINT your student ID: PRINT AND SIGN your name:, (last)

More information

MAE140 - Linear Circuits - Fall 14 Midterm, November 6

MAE140 - Linear Circuits - Fall 14 Midterm, November 6 MAE140 - Linear Circuits - Fall 14 Midterm, November 6 Instructions (i) This exam is open book. You may use whatever written materials you choose, including your class notes and textbook. You may use a

More information

Designing Information Devices and Systems I Spring 2018 Lecture Notes Note 17

Designing Information Devices and Systems I Spring 2018 Lecture Notes Note 17 EECS 16A Designing Information Devices and Systems I Spring 2018 Lecture Notes Note 17 17.1 Capacitive Touchscreen Viewing the physical structure corresponding to one pixel on the capacitive screen, we

More information

EE 40: Introduction to Microelectronic Circuits Spring 2008: Midterm 2

EE 40: Introduction to Microelectronic Circuits Spring 2008: Midterm 2 EE 4: Introduction to Microelectronic Circuits Spring 8: Midterm Venkat Anantharam 3/9/8 Total Time Allotted : min Total Points:. This is a closed book exam. However, you are allowed to bring two pages

More information

Sinusoidal Steady State Analysis (AC Analysis) Part I

Sinusoidal Steady State Analysis (AC Analysis) Part I Sinusoidal Steady State Analysis (AC Analysis) Part I Amin Electronics and Electrical Communications Engineering Department (EECE) Cairo University elc.n102.eng@gmail.com http://scholar.cu.edu.eg/refky/

More information

EECS 16A Designing Information Devices and Systems I Spring 2016 Elad Alon, Babak Ayazifar Final. Exam location: RSF Back Left, last SID# 1, 4, + 5

EECS 16A Designing Information Devices and Systems I Spring 2016 Elad Alon, Babak Ayazifar Final. Exam location: RSF Back Left, last SID# 1, 4, + 5 EECS 6A Designing Information Devices and Systems I Spring 206 Elad Alon, Babak Ayazifar Final Exam location: RSF Back Left, last SID#, 4, 5 PRINT your student ID: PRINT AND SIGN your name:, (last) (first)

More information

Designing Information Devices and Systems I Discussion 8B

Designing Information Devices and Systems I Discussion 8B EECS 16A Spring 2018 Designing Information Devices and Systems I Discussion 8B 1. Bio-Molecule Detector We ve already seen how to build a bio-molecule detector where bio-molecules change the resistance

More information

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EECS 40 Spring 2000 Introduction to Microelectronic Devices Prof. King MIDTERM EXAMINATION

More information

Figure 1. (a) An alternating current power supply provides a current that keeps switching direction.

Figure 1. (a) An alternating current power supply provides a current that keeps switching direction. 1 Figure 1 shows the output from the terminals of a power supply labelled d.c. (direct current). Voltage / V 6 4 2 0 2 0 5 10 15 20 25 Time/ms 30 35 40 45 50 Figure 1 (a) An alternating current power supply

More information

Designing Information Devices and Systems I Babak Ayazifar, Vladimir Stojanovic. This homework is due October 25, 2016, at 1PM.

Designing Information Devices and Systems I Babak Ayazifar, Vladimir Stojanovic. This homework is due October 25, 2016, at 1PM. EECS 16A Fall 2016 Designing Information Devices and Systems I Babak Ayazifar, Vladimir Stojanovic Homework 8 This homework is due October 25, 2016, at 1PM. 1. Homework process and study group Who else

More information

Designing Information Devices and Systems I Spring 2019 Midterm 2

Designing Information Devices and Systems I Spring 2019 Midterm 2 1 EECS 16A Designing Information Devices and Systems I Spring 2019 Midterm 2 1. How is your semester so far? (1 point) 2. Do you have any summer plans? (1 point) Do not turn this page until the proctor

More information

Designing Information Devices and Systems I Fall 2018 Midterm 2. Midterm 2 Solution

Designing Information Devices and Systems I Fall 2018 Midterm 2. Midterm 2 Solution Last Updated: 2018-11-10 02:58 1 EECS 16A Designing Information Devices and Systems I Fall 2018 Midterm 2 Midterm 2 Solution PRINT your student ID: PRINT AND SIGN your name:, (last name) (first name) (signature)

More information

Version 001 CIRCUITS holland (1290) 1

Version 001 CIRCUITS holland (1290) 1 Version CIRCUITS holland (9) This print-out should have questions Multiple-choice questions may continue on the next column or page find all choices before answering AP M 99 MC points The power dissipated

More information

The next two questions pertain to the situation described below. Consider a parallel plate capacitor with separation d:

The next two questions pertain to the situation described below. Consider a parallel plate capacitor with separation d: PHYS 102 Exams Exam 2 PRINT (A) The next two questions pertain to the situation described below. Consider a parallel plate capacitor with separation d: It is connected to a battery with constant emf V.

More information

Electric Circuits II Sinusoidal Steady State Analysis. Dr. Firas Obeidat

Electric Circuits II Sinusoidal Steady State Analysis. Dr. Firas Obeidat Electric Circuits II Sinusoidal Steady State Analysis Dr. Firas Obeidat 1 Table of Contents 1 2 3 4 5 Nodal Analysis Mesh Analysis Superposition Theorem Source Transformation Thevenin and Norton Equivalent

More information

MAE140 - Linear Circuits - Winter 09 Midterm, February 5

MAE140 - Linear Circuits - Winter 09 Midterm, February 5 Instructions MAE40 - Linear ircuits - Winter 09 Midterm, February 5 (i) This exam is open book. You may use whatever written materials you choose, including your class notes and textbook. You may use a

More information

Designing Information Devices and Systems I Fall 2015 Anant Sahai, Ali Niknejad Homework 10. This homework is due November 9, 2015, at Noon.

Designing Information Devices and Systems I Fall 2015 Anant Sahai, Ali Niknejad Homework 10. This homework is due November 9, 2015, at Noon. EECS 16A Designing Information Devices and Systems I Fall 2015 Anant Sahai, Ali Niknejad Homework 10 This homework is due November 9, 2015, at Noon. 1. Homework process and study group Who else did you

More information

Designing Information Devices and Systems I Spring 2019 Homework 7

Designing Information Devices and Systems I Spring 2019 Homework 7 Last Updated: 2019-03-16 22:56 1 EECS 16A Designing Information Devices and Systems I Spring 2019 Homework 7 This homework is due March 15, 2019 at 23:59. Self-grades are due March 19, 2019, at 23:59.

More information

Designing Information Devices and Systems I Fall 2015 Anant Sahai, Ali Niknejad Midterm 1. Exam location: 60 Evans, last digit SID= 6

Designing Information Devices and Systems I Fall 2015 Anant Sahai, Ali Niknejad Midterm 1. Exam location: 60 Evans, last digit SID= 6 EECS 16A Designing Information Devices and Systems I Fall 2015 Anant Sahai, Ali Niknejad Midterm 1 Exam location: 60 Evans, last digit SID= 6 PRINT your student ID: PRINT AND SIGN your name:, (last) (first)

More information

Designing Information Devices and Systems I Fall 2018 Lecture Notes Note Introduction to Capacitive Touchscreen

Designing Information Devices and Systems I Fall 2018 Lecture Notes Note Introduction to Capacitive Touchscreen EES 16A Designing Information Devices and Systems I Fall 2018 Lecture Notes Note 16 16.1 Introduction to apacitive Touchscreen We ve seen how a resistive touchscreen works by using the concept of voltage

More information

Physics Exam II

Physics Exam II Physics 208 - Exam II Spring 2018 (all sections) - March 5, 2018. Please fill out the information and read the instructions below, but do not open the exam until told to do so. Rules of the exam: 1. You

More information

Chapter 10: Sinusoidal Steady-State Analysis

Chapter 10: Sinusoidal Steady-State Analysis Chapter 10: Sinusoidal Steady-State Analysis 10.1 10.2 10.3 10.4 10.5 10.6 10.9 Basic Approach Nodal Analysis Mesh Analysis Superposition Theorem Source Transformation Thevenin & Norton Equivalent Circuits

More information

Designing Information Devices and Systems I Spring 2018 Midterm 1. Exam Location: 155 Dwinelle Last Name: Cheng - Lazich

Designing Information Devices and Systems I Spring 2018 Midterm 1. Exam Location: 155 Dwinelle Last Name: Cheng - Lazich EECS 16A Designing Information Devices and Systems I Spring 2018 Midterm 1 Exam Location: 155 Dwinelle Last Name: Cheng - Lazich PRINT your student ID: PRINT AND SIGN your name:, (last name) (first name)

More information

Designing Information Devices and Systems I Fall 2017 Official Lecture Notes Note 13

Designing Information Devices and Systems I Fall 2017 Official Lecture Notes Note 13 EECS 16A Designing Information Devices and Systems I Fall 2017 Official Lecture Notes Note 13 13.1 Analysis Review: Voltage Divider In order to review the analysis procedure described in the previous note,

More information

Electric Circuits I. Midterm #1

Electric Circuits I. Midterm #1 The University of Toledo Section number s5ms_elci7.fm - Electric Circuits I Midterm # Problems Points. 3 2. 7 3. 5 Total 5 Was the exam fair? yes no The University of Toledo Section number s5ms_elci7.fm

More information

P114 University of Rochester NAME S. Manly Spring 2010

P114 University of Rochester NAME S. Manly Spring 2010 Exam 2 (March 23, 2010) Please read the problems carefully and answer them in the space provided. Write on the back of the page, if necessary. Show your work where indicated. Problem 1 ( 8 pts): In each

More information

Phys 2025, First Test. September 20, minutes Name:

Phys 2025, First Test. September 20, minutes Name: Phys 05, First Test. September 0, 011 50 minutes Name: Show all work for maximum credit. Each problem is worth 10 points. Work 10 of the 11 problems. k = 9.0 x 10 9 N m / C ε 0 = 8.85 x 10-1 C / N m e

More information

UNIT 4 DC EQUIVALENT CIRCUIT AND NETWORK THEOREMS

UNIT 4 DC EQUIVALENT CIRCUIT AND NETWORK THEOREMS UNIT 4 DC EQUIVALENT CIRCUIT AND NETWORK THEOREMS 1.0 Kirchoff s Law Kirchoff s Current Law (KCL) states at any junction in an electric circuit the total current flowing towards that junction is equal

More information

Chapter 5. Department of Mechanical Engineering

Chapter 5. Department of Mechanical Engineering Source Transformation By KVL: V s =ir s + v By KCL: i s =i + v/r p is=v s /R s R s =R p V s /R s =i + v/r s i s =i + v/r p Two circuits have the same terminal voltage and current Source Transformation

More information

Designing Information Devices and Systems I Fall 2018 Homework 7

Designing Information Devices and Systems I Fall 2018 Homework 7 Last Updated: 2018-10-05 20:54 1 EECS 16A Designing Information Devices and Systems I Fall 2018 omework 7 This homework is due October 12, 2018, at 23:59. Self-grades are due October 16, 2018, at 23:59.

More information

Midterm Exam (closed book/notes) Tuesday, February 23, 2010

Midterm Exam (closed book/notes) Tuesday, February 23, 2010 University of California, Berkeley Spring 2010 EE 42/100 Prof. A. Niknejad Midterm Exam (closed book/notes) Tuesday, February 23, 2010 Guidelines: Closed book. You may use a calculator. Do not unstaple

More information

RC, RL, and LCR Circuits

RC, RL, and LCR Circuits RC, RL, and LCR Circuits EK307 Lab Note: This is a two week lab. Most students complete part A in week one and part B in week two. Introduction: Inductors and capacitors are energy storage devices. They

More information

IMPORTANT Read these directions carefully:

IMPORTANT Read these directions carefully: Physics 208: Electricity and Magnetism Common Exam 2, October 17 th 2016 Print your name neatly: First name: Last name: Sign your name: Please fill in your Student ID number (UIN): _ - - Your classroom

More information

Capacitors. Example 1

Capacitors. Example 1 Physics 30AP Resistors and apacitors I apacitors A capacitor is a device for storing electrical charge that consists of two conducting objects placed near one another but not touching. A A typical capacitor

More information

Exam 1--PHYS 102--Spring 2013

Exam 1--PHYS 102--Spring 2013 ame: Class: Date: Exam 1--PHYS 102--Spring 2013 Multiple Choice Identify the choice that best completes the statement or answers the question. 1. A metallic object holds a charge of 3.8 10 6 C. What total

More information

Physics 212 Midterm 2 Form A

Physics 212 Midterm 2 Form A 1. A wire contains a steady current of 2 A. The charge that passes a cross section in 2 s is: A. 3.2 10-19 C B. 6.4 10-19 C C. 1 C D. 2 C E. 4 C 2. In a Physics 212 lab, Jane measures the current versus

More information

Chapter 10 AC Analysis Using Phasors

Chapter 10 AC Analysis Using Phasors Chapter 10 AC Analysis Using Phasors 10.1 Introduction We would like to use our linear circuit theorems (Nodal analysis, Mesh analysis, Thevenin and Norton equivalent circuits, Superposition, etc.) to

More information

University of California at Berkeley College of Engineering Dept. of Electrical Engineering and Computer Sciences. EECS 40 Midterm II

University of California at Berkeley College of Engineering Dept. of Electrical Engineering and Computer Sciences. EECS 40 Midterm II University of California at Berkeley College of Engineering Dept. of Electrical Engineering and Computer Sciences EECS 40 Midterm II Spring 2001 Prof. Roger T. Howe April 11, 2001 Name: Last, First Student

More information

2005 AP PHYSICS C: ELECTRICITY AND MAGNETISM FREE-RESPONSE QUESTIONS

2005 AP PHYSICS C: ELECTRICITY AND MAGNETISM FREE-RESPONSE QUESTIONS 2005 AP PHYSICS C: ELECTRICITY AND MAGNETISM In the circuit shown above, resistors 1 and 2 of resistance R 1 and R 2, respectively, and an inductor of inductance L are connected to a battery of emf e and

More information

Series & Parallel Resistors 3/17/2015 1

Series & Parallel Resistors 3/17/2015 1 Series & Parallel Resistors 3/17/2015 1 Series Resistors & Voltage Division Consider the single-loop circuit as shown in figure. The two resistors are in series, since the same current i flows in both

More information

Capacitors. Chapter How capacitors work Inside a capacitor

Capacitors. Chapter How capacitors work Inside a capacitor Chapter 6 Capacitors In every device we have studied so far sources, resistors, diodes and transistors the relationship between voltage and current depends only on the present, independent of the past.

More information

Do not fill out the information below until instructed to do so! Name: Signature: Section Number:

Do not fill out the information below until instructed to do so! Name: Signature:   Section Number: Do not fill out the information below until instructed to do so! Name: Signature: E-mail: Section Number: No calculators are allowed in the test. Be sure to put a box around your final answers and clearly

More information

Designing Information Devices and Systems I Spring 2016 Elad Alon, Babak Ayazifar Midterm 1

Designing Information Devices and Systems I Spring 2016 Elad Alon, Babak Ayazifar Midterm 1 EECS 16A Designing Information Devices and Systems I Spring 2016 Elad Alon, Babak Ayazifar Midterm 1 Exam location: 2050 Valley Life Sciences Building, last SID# 9 + 3 PRINT your student ID: PRINT AND

More information

Exam 3--PHYS 102--S14

Exam 3--PHYS 102--S14 Name: Exam 3--PHYS 102--S14 Multiple Choice Identify the choice that best completes the statement or answers the question. 1. Which of these statements is always true? a. resistors in parallel have the

More information

Physics 24 Exam 2 March 18, 2014

Physics 24 Exam 2 March 18, 2014 Exam Total / 200 Physics 24 Exam 2 March 18, 2014 Printed Name: Rec. Sec. Letter: Five multiple choice questions, 8 points each. Choose the best or most nearly correct answer. 1. You need to store electrical

More information

Designing Information Devices and Systems I Summer 2017 D. Aranki, F. Maksimovic, V. Swamy Midterm 1. Exam Location: 2050 VLSB

Designing Information Devices and Systems I Summer 2017 D. Aranki, F. Maksimovic, V. Swamy Midterm 1. Exam Location: 2050 VLSB EECS 16A Designing Information Devices and Systems I Summer 2017 D. Aranki, F. Maksimovic, V. Swamy Midterm 1 Exam Location: 2050 VLSB PRINT your student ID: PRINT AND SIGN your name:, (last name) (first

More information

AP Physics C. Electric Circuits III.C

AP Physics C. Electric Circuits III.C AP Physics C Electric Circuits III.C III.C.1 Current, Resistance and Power The direction of conventional current Suppose the cross-sectional area of the conductor changes. If a conductor has no current,

More information

AP Physics Study Guide Chapter 17 Electric Potential and Energy Name. Circle the vector quantities below and underline the scalar quantities below

AP Physics Study Guide Chapter 17 Electric Potential and Energy Name. Circle the vector quantities below and underline the scalar quantities below AP Physics Study Guide Chapter 17 Electric Potential and Energy Name Circle the vector quantities below and underline the scalar quantities below electric potential electric field electric potential energy

More information

Louisiana State University Physics 2102, Exam 3 April 2nd, 2009.

Louisiana State University Physics 2102, Exam 3 April 2nd, 2009. PRINT Your Name: Instructor: Louisiana State University Physics 2102, Exam 3 April 2nd, 2009. Please be sure to PRINT your name and class instructor above. The test consists of 4 questions (multiple choice),

More information

1. Review of Circuit Theory Concepts

1. Review of Circuit Theory Concepts 1. Review of Circuit Theory Concepts Lecture notes: Section 1 ECE 65, Winter 2013, F. Najmabadi Circuit Theory is an pproximation to Maxwell s Electromagnetic Equations circuit is made of a bunch of elements

More information

Chapter 1W Basic Electromagnetic Concepts

Chapter 1W Basic Electromagnetic Concepts Chapter 1W Basic Electromagnetic Concepts 1W Basic Electromagnetic Concepts 1W.1 Examples and Problems on Electric Circuits 1W.2 Examples on Magnetic Concepts This chapter includes additional examples

More information

Physics 42 Exam 2 PRACTICE Name: Lab

Physics 42 Exam 2 PRACTICE Name: Lab Physics 42 Exam 2 PRACTICE Name: Lab 1 2 3 4 Conceptual Multiple Choice (2 points each) Circle the best answer. 1.Rank in order, from brightest to dimmest, the identical bulbs A to D. A. C = D > B > A

More information

Chapter 10 Sinusoidal Steady State Analysis Chapter Objectives:

Chapter 10 Sinusoidal Steady State Analysis Chapter Objectives: Chapter 10 Sinusoidal Steady State Analysis Chapter Objectives: Apply previously learn circuit techniques to sinusoidal steady-state analysis. Learn how to apply nodal and mesh analysis in the frequency

More information

Louisiana State University Physics 2102, Exam 2, March 5th, 2009.

Louisiana State University Physics 2102, Exam 2, March 5th, 2009. PRINT Your Name: Instructor: Louisiana State University Physics 2102, Exam 2, March 5th, 2009. Please be sure to PRINT your name and class instructor above. The test consists of 4 questions (multiple choice),

More information

Designing Information Devices and Systems I Spring 2018 Lecture Notes Note 20

Designing Information Devices and Systems I Spring 2018 Lecture Notes Note 20 EECS 16A Designing Information Devices and Systems I Spring 2018 Lecture Notes Note 20 Design Example Continued Continuing our analysis for countdown timer circuit. We know for a capacitor C: I = C dv

More information

Circuits Capacitance of a parallel-plate capacitor : C = κ ε o A / d. (ρ = resistivity, L = length, A = cross-sectional area) Resistance : R = ρ L / A

Circuits Capacitance of a parallel-plate capacitor : C = κ ε o A / d. (ρ = resistivity, L = length, A = cross-sectional area) Resistance : R = ρ L / A k = 9.0 x 109 N m2 / C2 e = 1.60 x 10-19 C ε o = 8.85 x 10-12 C2 / N m2 Coulomb s law: F = k q Q / r2 (unlike charges attract, like charges repel) Electric field from a point charge : E = k q / r2 ( towards

More information

Physics 116A Notes Fall 2004

Physics 116A Notes Fall 2004 Physics 116A Notes Fall 2004 David E. Pellett Draft v.0.9 Notes Copyright 2004 David E. Pellett unless stated otherwise. References: Text for course: Fundamentals of Electrical Engineering, second edition,

More information

EECS 16A Designing Information Devices and Systems I Spring 2016 Elad Alon, Babak Ayazifar Final. Exam location: Solutions

EECS 16A Designing Information Devices and Systems I Spring 2016 Elad Alon, Babak Ayazifar Final. Exam location: Solutions EECS 6A Designing Information Devices and Systems I Spring 06 Elad Alon, Babak Ayazifar Final Exam location: Solutions PRINT your student ID: PRINT AND SIGN your name:, (last) (first) (signature) PRINT

More information

POLYTECHNIC UNIVERSITY Electrical Engineering Department. EE SOPHOMORE LABORATORY Experiment 2 DC circuits and network theorems

POLYTECHNIC UNIVERSITY Electrical Engineering Department. EE SOPHOMORE LABORATORY Experiment 2 DC circuits and network theorems POLYTECHNIC UNIVERSITY Electrical Engineering Department EE SOPHOMORE LABORATORY Experiment 2 DC circuits and network theorems Modified for Physics 18, Brooklyn College I. Overview of Experiment In this

More information

Physics 102 Spring 2006: Final Exam Multiple-Choice Questions

Physics 102 Spring 2006: Final Exam Multiple-Choice Questions Last Name: First Name: Physics 102 Spring 2006: Final Exam Multiple-Choice Questions For questions 1 and 2, refer to the graph below, depicting the potential on the x-axis as a function of x V x 60 40

More information

EE-201 Review Exam I. 1. The voltage Vx in the circuit below is: (1) 3V (2) 2V (3) -2V (4) 1V (5) -1V (6) None of above

EE-201 Review Exam I. 1. The voltage Vx in the circuit below is: (1) 3V (2) 2V (3) -2V (4) 1V (5) -1V (6) None of above EE-201, Review Probs Test 1 page-1 Spring 98 EE-201 Review Exam I Multiple Choice (5 points each, no partial credit.) 1. The voltage Vx in the circuit below is: (1) 3V (2) 2V (3) -2V (4) 1V (5) -1V (6)

More information

AP Physics C 1998 Multiple Choice Questions Electricity and Magnetism

AP Physics C 1998 Multiple Choice Questions Electricity and Magnetism AP Physics C 1998 Multiple Choice Questions Electricity and Magnetism The materials included in these files are intended for use by AP teachers for course and exam preparation in the classroom; permission

More information

Designing Information Devices and Systems I Spring 2017 Official Lecture Notes Note 13

Designing Information Devices and Systems I Spring 2017 Official Lecture Notes Note 13 EES 6A Designing Information Devices an Systems I Spring 27 Official Lecture Notes Note 3 Touchscreen Revisite We ve seen how a resistive touchscreen works by using the concept of voltage iviers. Essentially,

More information

M. C. Escher: Waterfall. 18/9/2015 [tsl425 1/29]

M. C. Escher: Waterfall. 18/9/2015 [tsl425 1/29] M. C. Escher: Waterfall 18/9/2015 [tsl425 1/29] Direct Current Circuit Consider a wire with resistance R = ρl/a connected to a battery. Resistor rule: In the direction of I across a resistor with resistance

More information

20.2 Design Example: Countdown Timer

20.2 Design Example: Countdown Timer EECS 16A Designing Information Devices and Systems I Fall 018 Lecture Notes Note 0 0.1 Design Procedure Now that we ve analyzed many circuits, we are ready to focus on designing interesting circuits to

More information

Problem Set 5 Solutions

Problem Set 5 Solutions University of California, Berkeley Spring 01 EE /0 Prof. A. Niknejad Problem Set 5 Solutions Please note that these are merely suggested solutions. Many of these problems can be approached in different

More information

Basic RL and RC Circuits R-L TRANSIENTS: STORAGE CYCLE. Engineering Collage Electrical Engineering Dep. Dr. Ibrahim Aljubouri

Basic RL and RC Circuits R-L TRANSIENTS: STORAGE CYCLE. Engineering Collage Electrical Engineering Dep. Dr. Ibrahim Aljubouri st Class Basic RL and RC Circuits The RL circuit with D.C (steady state) The inductor is short time at Calculate the inductor current for circuits shown below. I L E R A I L E R R 3 R R 3 I L I L R 3 R

More information

Solution: Based on the slope of q(t): 20 A for 0 t 1 s dt = 0 for 3 t 4 s. 20 A for 4 t 5 s 0 for t 5 s 20 C. t (s) 20 C. i (A) Fig. P1.

Solution: Based on the slope of q(t): 20 A for 0 t 1 s dt = 0 for 3 t 4 s. 20 A for 4 t 5 s 0 for t 5 s 20 C. t (s) 20 C. i (A) Fig. P1. Problem 1.24 The plot in Fig. P1.24 displays the cumulative charge q(t) that has entered a certain device up to time t. Sketch a plot of the corresponding current i(t). q 20 C 0 1 2 3 4 5 t (s) 20 C Figure

More information

How many electrons are transferred to the negative plate of the capacitor during this charging process? D (Total 1 mark)

How many electrons are transferred to the negative plate of the capacitor during this charging process? D (Total 1 mark) Q1.n uncharged 4.7 nf capacitor is connected to a 1.5 V supply and becomes fully charged. How many electrons are transferred to the negative plate of the capacitor during this charging process? 2.2 10

More information

PH2200 Practice Exam II Summer 2003

PH2200 Practice Exam II Summer 2003 PH00 Practice Exam II Summer 00 INSTRUCTIONS. Write your name and student identification number on the answer sheet and mark your recitation section.. Please cover your answer sheet at all times.. This

More information

[1] (b) Fig. 1.1 shows a circuit consisting of a resistor and a capacitor of capacitance 4.5 μf. Fig. 1.1

[1] (b) Fig. 1.1 shows a circuit consisting of a resistor and a capacitor of capacitance 4.5 μf. Fig. 1.1 1 (a) Define capacitance..... [1] (b) Fig. 1.1 shows a circuit consisting of a resistor and a capacitor of capacitance 4.5 μf. S 1 S 2 6.3 V 4.5 μf Fig. 1.1 Switch S 1 is closed and switch S 2 is left

More information

Application of Physics II for. Final Exam

Application of Physics II for. Final Exam Application of Physics II for Final Exam Question 1 Four resistors are connected as shown in Figure. (A)Find the equivalent resistance between points a and c. (B)What is the current in each resistor if

More information

EE 3120 Electric Energy Systems Study Guide for Prerequisite Test Wednesday, Jan 18, pm, Room TBA

EE 3120 Electric Energy Systems Study Guide for Prerequisite Test Wednesday, Jan 18, pm, Room TBA EE 3120 Electric Energy Systems Study Guide for Prerequisite Test Wednesday, Jan 18, 2006 6-7 pm, Room TBA First retrieve your EE2110 final and other course papers and notes! The test will be closed book

More information

Review of Circuit Analysis

Review of Circuit Analysis Review of Circuit Analysis Fundamental elements Wire Resistor Voltage Source Current Source Kirchhoff s Voltage and Current Laws Resistors in Series Voltage Division EE 42 Lecture 2 1 Voltage and Current

More information

EE292: Fundamentals of ECE

EE292: Fundamentals of ECE EE292: Fundamentals of ECE Fall 2012 TTh 10:00-11:15 SEB 1242 Lecture 4 120906 http://www.ee.unlv.edu/~b1morris/ee292/ 2 Outline Review Voltage Divider Current Divider Node-Voltage Analysis 3 Network Analysis

More information

Sinusoidal Steady State Analysis (AC Analysis) Part II

Sinusoidal Steady State Analysis (AC Analysis) Part II Sinusoidal Steady State Analysis (AC Analysis) Part II Amin Electronics and Electrical Communications Engineering Department (EECE) Cairo University elc.n102.eng@gmail.com http://scholar.cu.edu.eg/refky/

More information

first name (print) last name (print) brock id (ab17cd) (lab date)

first name (print) last name (print) brock id (ab17cd) (lab date) (ta initials) first name (print) last name (print) brock id (ab17cd) (lab date) Experiment 1 Capacitance In this Experiment you will learn the relationship between the voltage and charge stored on a capacitor;

More information

Electric Charge and Electric field

Electric Charge and Electric field Electric Charge and Electric field ConcepTest 16.1a Electric Charge I Two charged balls are repelling each other as they hang from the ceiling. What can you say about their charges? 1) one is positive,

More information

Tutorial #4: Bias Point Analysis in Multisim

Tutorial #4: Bias Point Analysis in Multisim SCHOOL OF ENGINEERING AND APPLIED SCIENCE DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ECE 2115: ENGINEERING ELECTRONICS LABORATORY Tutorial #4: Bias Point Analysis in Multisim INTRODUCTION When BJTs

More information

Tactics Box 23.1 Using Kirchhoff's Loop Law

Tactics Box 23.1 Using Kirchhoff's Loop Law PH203 Chapter 23 solutions Tactics Box 231 Using Kirchhoff's Loop Law Description: Knight/Jones/Field Tactics Box 231 Using Kirchhoff s loop law is illustrated Learning Goal: To practice Tactics Box 231

More information

Chapter 28. Direct Current Circuits

Chapter 28. Direct Current Circuits Chapter 28 Direct Current Circuits Circuit Analysis Simple electric circuits may contain batteries, resistors, and capacitors in various combinations. For some circuits, analysis may consist of combining

More information

Designing Information Devices and Systems I Spring 2018 Lecture Notes Note 16

Designing Information Devices and Systems I Spring 2018 Lecture Notes Note 16 EECS 16A Designing Information Devices an Systems I Spring 218 Lecture Notes Note 16 16.1 Touchscreen Revisite We ve seen how a resistive touchscreen works by using the concept of voltage iviers. Essentially,

More information

PHYS 272 (Spring 2018): Introductory Physics: Fields Problem-solving sessions

PHYS 272 (Spring 2018): Introductory Physics: Fields Problem-solving sessions Figure 1: Problem 1 Figure 2: Problem 2 PHYS 272 (Spring 2018): Introductory Physics: Fields Problem-solving sessions (1). A thin rod of length l carries a total charge Q distributed uniformly along its

More information

As light level increases, resistance decreases. As temperature increases, resistance decreases. Voltage across capacitor increases with time LDR

As light level increases, resistance decreases. As temperature increases, resistance decreases. Voltage across capacitor increases with time LDR LDR As light level increases, resistance decreases thermistor As temperature increases, resistance decreases capacitor Voltage across capacitor increases with time Potential divider basics: R 1 1. Both

More information

UNIT G485 Module Capacitors PRACTICE QUESTIONS (4)

UNIT G485 Module Capacitors PRACTICE QUESTIONS (4) UNIT G485 Module 2 5.2.1 Capacitors PRACTICE QUESTIONS (4) 1 A 2200 µf capacitor is charged to a p.d. of 9.0 V and then discharged through a 100 kω resistor. (a) Calculate : (i) The initial charge stored

More information