RDO Series Precision compensated pressure sensors

RCO Series Precision compensated pressure sensors

FEATURES 0...0 m to 0..., to 0, differential, gage or absolute Temperature compensated Calibrated zero and span High for low power applications Sensortechnics PRO services MEDIA COMPATIBILITY To be used

HDO Series Precision compensated pressure sensors

FEATURES to, absolute, gage or differential pressure Calibrated and temperature compensated High impedance for low power applications Sm SMD packages RoHS compliant MEDIA COMPATIBILITY To be used with

Amplified Low Pressure Sensors

Amplified Low Pressure Sensors 1 mbar (0.4 In H2O) to 60 In H2O Pressure Sensors Features 0 to 1 mbar to 0 to 60 In H2O Pressure Ranges Ratiometric 4 Output Temperature Compensated Calibrated Zero and

HRO Series Precision compensated pressure sensors

Precision compensated sensors FEATURES to, O to, differential Precision temperature compensated Calibrated offset and span RoHS compliant Quality Management System according to ISO 8:00 and ISO 0:008 MEDIA

Millivolt Output Pressure Sensors

Millivolt Output Pressure Sensors H-Grade Pressure Sensors Features 0 to 4 H2O to 0 to 100 Pressure Ranges % linearity...high accuracy version Temperature Compensated Calibrated Zero and Span General Description

Amplified Low Pressure Sensors

Amplified Low Pressure Sensors 1 mbar (0.4 In H2O) to 60 In H2O Pressure Sensors Features 0 to 1 mbar to 0 to 60 In H2O Pressure Ranges Ratiometric 4 Output Temperature Compensated Calibrated Zero and

HCL Series Miniature compensated low pressure sensors

FEATURES 0... 5 to 0... 5, differential or gage Calibrated and temperature compensated Matched pressure volumes Miniature SMT and SIL housings RoHS compliant SPECIFICATIONS Maximum ratings EQUIVALENT CIRCUIT

HMA Series Amplified pressure sensors

FEATURES 00 to 0 bar, to 0 psi gage or differential pressure Increased media compatibility Analog output Precision ASIC signal conditioning Calibrated and temperature compensated 2 SIL and DIP housings

SX Series Pressure sensors

FEATURES 0...1 to 0...150 Absolute, differential and gage devices High impedance bridge Low power consumption for battery operation APPLICATIONS Industrial controls Pneumatic controls Medical instrumentation

AWM3000 Series Mass flow sensor for gases

FEATURES Ranges 0...30 to 0...±1000 1 or 0...0. to 0... "H O (0... to 0... mbar).. V,..3.7 V, 4...0 ma output Actual mass flow sensing Low differential pressure sensing SERVICE To be used with dry gases

BLC Series - Basic Compact Pressure Sensor Series. Introduction

Sensors CoBeam TM Technology. The device provides a high output Features & Applications... signal at a low operating voltage and reduces the overall supply Standard Pressure Ranges... voltage while maintaining

BTE5000 / PTE5000 / PTU5000 Series Precision differential pressure transmitters

FEATURES 5 mbar to 0 bar, 0. to 50 psi differential pressure...6 or...0 ma Precision temperature compensated and calibrated Rugged aluminium housing Female /8" BSP and /8" NPT fittings MEDIA COMPATIBILITY

HME Series Amplified pressure sensors

FEATURE 100 to 10, 1 to 10 psi, gage or differential pressure Increased media compatibility 1 Digital PI bus output Precision AIC signal conditioning Calibrated and temperature compensated DIP housings

BTEL5000 / PTUL5000 Series Precision very low differential pressure transmitters

FETURES to, to differential pressure...6 or... m Precision temperature compensated and calibrated Rugged aluminium housing Female /8" BSP and /8" NPT fittings MEDI CMPTIBILITY Pressure inlet: Non-corrosive,

Smartec Pressure Sensor (bridge output)

DATASHEET Pressure sensor family 1/5 Smartec Pressure Sensor (bridge output) Features * Commercial grade * DIP version for high volume production * Gauge or absolute pressure * Resistive bridge technology

HCE Series Miniature amplified pressure sensors

FEATURES 10 to 5, absolute, gage or differential pressure Barometric pressure ranges Digital SPI bus and analog output Precision ASIC signal conditioning Calibred and temperure compensed Mched pressure

Low Pressure Sensor Amplified Analog Output SM6295-BCM-S

Low Pressure Sensor Amplified Analog Output SM6295-BCM-S-040-000 FEATURES Pressure range from 0 to 40 cmh 2 O 5.0 V operation Amplified analog output (10 to 90%Vdd) Compensated temperature range: 0 to

200 kpa On-Chip Temperature Compensated Silicon Pressure Sensors

Freescale Semiconductor Data Sheet: Technical Data Pressure Document Number: Rev 8, 10/2012 200 kpa On-Chip Temperature Compensated Silicon Pressure The devices series are silicon piezoresistive pressure

Temperature Compensation for MEAS Pressure Sensors

INTRODUCTION Advancements in microelectronic technology have pushed silicon sensors not only toward greater sophistication and lower functional cost but also in the direction of higher performance. The

Medium Pressure Sensor Analog Output

Medium Pressure Sensor Analog Output SM6844-015-A-B-5-S FEATURES Analog pressure calibrated and temperature compensated output Amplified analog output Compensated temperature range: 0 to 85oC Absolute

Small Absolute Pressure Sensor

Small Absolute Pressure Sensor SM5420E Series FEATURES Improved stability with integrated field shields Small SO8 surface-mount package 95 millivolt span Constant current or constant voltage drive or non-ported

Small Gage Pressure Sensor

Small Gage Pressure Sensor FEATURES Improved stability with integrated field shields Small SO8 surface-mount package 90 millivolt output Constant current or constant voltage drive Ported configuration

2N7002T. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.

Rev. 1 17 November 25 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features

H21A1 / H21A2 / H21A3 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH

HA / HA / HA.07 (.85). (.8) NOTES: 0.9 (6.5) 0. (6.5) 0.5 (.) 0.9 (.0) PACKAGE DIMENSIONS.95 (7.5).7 (6.9) 0.97 (.7) 0.957 (.) 0.7 (.0) 0.57 (.6) D E 0.755 (9.) 0.75 (8.9) 0.9 (.) 0.9 (.0) Ø 0. (.) Ø 0.6

Optical (2.8) (2.3) PIN 1 ANODE PIN 2 CATHODE PIN 3 COLLECTOR PIN 4 EMITTER

PACKAGE DIMENSIONS 0.97 (.7) 0.957 (.3) 0.7 (.0) 0.57 (.6) Ø 0.33 (3.) Ø 0.6 (3.) (X) 0.9 (6.35) 0.3 (6.5) D E 0.755 (9.) 0.75 (8.9) 0.39 (.00) 0.3 (0.85) 0.9 (3.3) 0.9 (3.0) 0.03 (.60) NOM 0.33 (.0) 0.

PMV65XP. 1. Product profile. 2. Pinning information. P-channel TrenchMOS extremely low level FET. 1.1 General description. 1.

Rev. 1 28 September 24 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Low

2N7002F. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.

Rev. 3 28 April 26 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology..2 Features Logic level

MC3346. General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays

General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays The MC336 is designed for general purpose, low power applications for consumer and industrial designs.

Ruggedized Electrical Double Layer Energy Storage Capacitors

Ruggedized Electrical Double Layer Energy Storage Capacitors FEATURES Polarized energy storage capacitor with high capacity and energy density Rated voltage: 2.7 V Available in through-hole (radial) version

KMT37 Angular Sensor DESCRIPTION

AMR Sensor with 180 period For the use at moderate field strengths High accuracy Reliable SO8-package Qualified for automotive applications DESCRIPTION The KMT37 is a magnetic field sensor based on the

FAN4040 Precision Micropower Shunt Voltage Reference

www.fairchildsemi.com Precision Micropower Shunt Voltage Reference Features Fixed 2.500V, 3.300V and 5.00V s to ±0.1% (25 C) Low output noise Low temperature coefficient to 0ppm/ C Small package Extended

Recommended Hole Pattern: [mm]

Dimensions: [mm] Recommended Hole Pattern: [mm] Electrical Properties: Properties Test conditions Value Unit Tol. Capacitance 1 V/ 1 khz ± 0.2 khz C 680 nf ±10% Rated Voltage U R 400 V (DC) Insulation

Operating Characteristics Table 1. Operating Characteristics (V S = 3.0 Vdc, T A = 25 C unless otherwise noted, P1 > P2) Characteristic Symbol Min Typ

Freescale Semiconductor Pressure Rev 14, 10/2008 + 10 kpa Uncompensated Silicon Pressure Sensors The series silicon piezoresistive pressure sensors provide a very accurate and linear voltage output, directly

PMN40LN. 1. Description. 2. Features. 3. Applications. 4. Pinning information. TrenchMOS logic level FET

M3D32 Rev. 1 13 November 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: in SOT457 (TSOP6). 2.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and

PMV40UN. 1. Product profile. 2. Pinning information. TrenchMOS ultra low level FET. 1.1 Description. 1.2 Features. 1.

M3D88 Rev. 1 5 August 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT23.

Freescale Semiconductor

Freescale Semiconductor Pressure Rev 14, 10/2008 + 10 kpa Uncompensated Silicon Pressure The series silicon piezoresistive pressure sensors provide a very accurate and linear voltage output, directly proportional

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Rev. 24 March 29 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package

µtrenchmos standard level FET Low on-state resistance in a small surface mount package. DC-to-DC primary side switching.

M3D88 Rev. 2 19 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in

PHOTODARLINGTON OPTICAL INTERRUPTER SWITCH

HB HB HB3 PACKAGE DIMENSIONS 0.7 (.0) 0.57 (.6) C L 0.9 (6.35) 0.3 (6.5) D E C L 0.39 (.00) 0.3 (0.85).33 (3.38).073 (.85) 0.9 (3.3) 0.9 (3.0) 0.33 (.0) 0. (0.7) Optical C L 0.5 (3.) 0.9 (3.0).35 (8.00).95

N-channel µtrenchmos ultra low level FET. Top view MBK090 SOT416 (SC-75)

M3D73 Rev. 3 March 24 Product data. Product profile. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology..2 Features Surface mounted package Low

PHT6N06T. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1.

M3D87 Rev. 2 3 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT223.

PHD/PHP36N03LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 General description. 1.

Rev. 2 8 June 26 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2

PMWD16UN. 1. Product profile. 2. Pinning information. Dual N-channel µtrenchmos ultra low level FET. 1.1 General description. 1.

Rev. 2 24 March 25 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

Electrical Double Layer Energy Storage Capacitors Up to 3 V Operating Voltage

Electrical Double Layer Energy Storage Capacitors Up to 3 V Operating Voltage FEATURES Polarized energy storage capacitor with high capacity and energy density Rated voltage: 3.0 V Available in through-hole

NDF08N50Z, NDP08N50Z. N-Channel Power MOSFET. Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb Free and are RoHS Compliant

N-Channel Power MOSFET 500 V, 0.69 Features Low ON Resistance Low Gate Charge 0% Avalanche Tested These Devices are Pb Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (T C = 25 C unless otherwise

MOC8111 MOC8112 MOC8113

PACKAGE SCHEMATIC ANODE 6 N/C 6 6 CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER 6 DESCRIPTION The MOC8X series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor

Small, Gauge Pressure Sensor

Small, Gauge Pressure Sensor SM5G-GG Series FEATURES Improved stability with integrated field shields Small SO8 surface-mount package 90 millivolt output Constant current or constant voltage drive Ported

TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.

M3D88 Rev. 2 2 November 21 Product data 1. Description in a plastic package using TrenchMOS 1 technology. Product availability: in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level

SM98A Harsh Media Backside Absolute Pressure Series

SM98A Harsh Media Backside Absolute Pressure Series SM98A Series FEATURES Pressure Range: 10 Bar (145 PSIA), 20 Bar (290 PSIA) On-Board temperature sensing diode Small die (1.2 mm x 1.33 mm) Backside entry

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

PHM21NQ15T. TrenchMOS standard level FET

M3D879 Rev. 2 11 September 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features SOT96 (SO8)

NE522 High Speed Dual Differential Comparator/Sense Amp

HighSpeed DualDifferential Comparator/Sense Amp Features 5 ns Maximum Guaranteed Propagation Delay 0 A Maximum Input Bias Current TTL-Compatible Strobes and Outputs Large Common-Mode Input oltage Range

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor

N-channel TrenchMOS standard level FET. High noise immunity due to high gate threshold voltage

Rev. 2 12 March 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

PSMN006-20K. N-channel TrenchMOS SiliconMAX ultra low level FET

Rev. 7 November 29 Product data sheet. Product profile. General description SiliconMAX ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

DS 300. Electronic Pressure Switch. with IO-Link interface. Stainless Steel Sensor. accuracy according to IEC 60770: 0.35 % FSO.

DS 00 Electronic Pressure Switch with IO-Link interface Stainless Steel Sensor accuracy according to IEC 60770: 0.5 % FSO Nominal pressure from 0... 00 mbar up to 0... 600 bar Digital output signal IO-Link

Very low conduction losses Low forward voltage drop Low thermal resistance High specified avalanche capability High integration ECOPACK 2 compliant

Datasheet 100 V, 30 A power Schottky rectifier Features Very low conduction losses Low forward voltage drop Low thermal resistance High specified avalanche capability High integration ECOPACK 2 compliant

V N (8) V N (7) V N (6) GND (5)

4-Channel Low Capacitance Dual-Voltage ESD Protection Array Features Three Channels of Low Voltage ESD Protection One Channel of High Voltage ESD Protection Provides ESD Protection to IEC61000 4 2 Level

STPSC15H V power Schottky silicon carbide diode. Datasheet. Features A. Description. No or negligible reverse recovery

Datasheet 1200 V power Schottky silicon carbide diode Features A K No or negligible reverse recovery K K Switching behavior independent of temperature Robust high voltage periphery Operating from -40 C

WCAP-AS5H Aluminum Electrolytic Capacitors

A Dimensions: [mm] B Recommended hole pattern: [mm] D1 Electrical Properties: Properties Test conditions Value Unit Tol. Capacitance 0.25V; 120Hz C 10 µf ± 20% Rated voltage U R 16 V (DC) max. Leakage

OEM Silicon Pressure Die

OEM Silicon Pressure Die SM9520 Series FEATURES High volume, cost effective Gauge configuration Constant current or constant voltage drive Millivolt output Available in 0.15, 0.60 & 1.50 PSIG full-scale

PSMN002-25P; PSMN002-25B

PSMN2-25P; PSMN2-25B Rev. 1 22 October 21 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PSMN2-25P

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and

IRFR Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field effect transistor

M3D3 Rev. 4 August Product data. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT48 (D-PAK).. Features Fast switching

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor

PHOTOVOLTAIC SOLID-STATE RELAY OPTOCOUPLERS

PACKAGE SCHEMATIC ANODE 6 DRAIN 6 CATHODE 2 5 6 N/C 3 4 DRAIN DESCRIPTION The HSR32 and HSR42 devices consist of a AlGaAs infrared emitting diode optically coupled to a power MOSFET detector which is driven

Dual 3-channel analog multiplexer/demultiplexer with supplementary switches

with supplementary switches Rev. 03 16 December 2009 Product data sheet 1. General description 2. Features 3. Applications 4. Ordering information The is a dual 3-channel analog multiplexer/demultiplexer

DATA SHEET. PH2369 NPN switching transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Oct 11.

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 27 2004 Oct 11 FEATURES Low current (max. 200 ma) Low voltage (max. 15 V). APPLICATIONS High-speed switching. PINNING

Distributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. LBA11 Dual Pole OptoMOS Relay Parameter Ratings Units Blocking Voltage 3 V

Recommended Land Pattern: [mm]

Dimensions: [mm] Recommended Land Pattern: [mm] Electrical Properties: Properties Test conditions Value Unit Tol. Capacitance 1 V/ 1 khz ± 0.2 khz C 150 nf ±10% Rated Voltage U R 310 V (AC) max. Rated

PHP7NQ60E; PHX7NQ60E

Rev. 1 2 August 22 Product data 1. Description N-channel, enhancement mode field-effect power transistor. Product availability: PHP7NQ6E in TO-22AB (SOT78) PHX7NQ6E in isolated TO-22AB. 2. Features Very

Dual rugged ultrafast rectifier diode, 20 A, 150 V. Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.

Rev. 04 2 March 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits High reverse

BUK B. N-channel TrenchMOS standard level FET

Rev. 4 24 September 28 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

74HC1GU04GV. 1. General description. 2. Features. 3. Ordering information. Marking. 5. Functional diagram. Inverter

Rev. 5 1 July 27 Product data sheet 1. General description 2. Features 3. Ordering information The is a high-speed Si-gate CMOS device. It provides an inverting single stage function. The standard output

PSMN004-60P/60B. PSMN004-60P in SOT78 (TO-220AB) PSMN004-60B in SOT404 (D 2 -PAK).

Rev. 1 26 April 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PSMN4-6P in SOT78 (TO-22AB) PSMN4-6B

PMV56XN. 1. Product profile. 2. Pinning information. µtrenchmos extremely low level FET. 1.1 Description. 1.2 Features. 1.

M3D88 Rev. 2 24 June 24 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features TrenchMOS technology

Recommended Land Pattern: [mm]

Dimensions: [mm] Recommended Land Pattern: [mm] Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 00 khz/ 0. ma L 2x5 µh typ. 2 3 2,7 0,3 4 Impedance 00 MHz Z 500 Ω ±25% Rated

60 V, 0.3 A N-channel Trench MOSFET

Rev. 01 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT2 (TO-26AB) Surface-Mounted

all stainless steel transducer multimedia compatibility

all stainless steel transducer multimedia compatibility High-Performance Silicon technology LARGE INVENTORY Fast Shipment! 0-0.07 to 0-690 bar 100 mv, 0 to 5 V, and 4 to 20 ma Outputs U 1, 2 & 5 psi Low

PHOTOTRANSISTOR OPTOCOUPLERS

DESCRIPTION The CNY7 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. FEATURES CNY7-/2/3 are also available in white package by specifying -M suffix (eg. CNY7-2-M) UL recognized

PHOTODARLINGTON OPTOCOUPLERS

DESCRIPTION The CNX48U, HBX, and TIL3 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U HB HB2 HB255 HB3 TIL3 FEATURES High sensitivity to low input

MC1403, B. Low Voltage Reference PRECISION LOW VOLTAGE REFERENCE

Low Voltage Reference A precision bandgap voltage reference designed for critical instrumentation and D/A converter applications. This unit is designed to work with D/A converters, up to bits in accuracy,

Passivated ultra sensitive gate thyristor in a SOT54 plastic package. Earth leakage circuit breakers or Ground Fault Circuit Interrupters (GFCI)

Rev. 2 31 July 28 Product data sheet 1. Product profile 1.1 General description Passivated ultra sensitive gate thyristor in a SOT54 plastic package. 1.2 Features Ultra sensitive gate Direct interfacing

10 kpa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors

Freescale Semiconductor Technical Data 10 kpa On-Chip Temperature Compensated & Calibrated Silicon Pressure The /MPXV2010G series silicon piezoresistive pressure sensors provide a very accurate and linear

DATA SHEET. BSS192 P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jun 20

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D19 Supersedes data of 1997 Jun 2 22 May 22 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS Line

NGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V

NGTB4N6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering

WCAP-FTXX Film Capacitors

A Dimensions: [mm] B Recommended hole pattern: [mm] D1 Electrical Properties: Properties Test conditions Value Unit Tol. Capacitance 1 V/ 1 khz ± 0.2 khz C 0.1000 µf ± 10% Rated voltage U R 310 V (AC)

ic-wg BLCC WGC PACKAGE SPECIFICATION

Rev B1, Page 1/5 ORDERING INFORMATION Type Package Options Order Designation ic-wg BLCC WGC none ic-wg BLCC WGC ic-wg BLCC WGC reticle ic-wg BLCC WGC-WG1R WG1R Code Disc 13bit-Gray +2048 PPR A/B, d 44mm

SDT800-STR. Description. Features. Agency Approvals. Applications. Absolute Maximum Ratings. Schematic Diagram. Ordering Information

Description The consists of two phototransistors, each optically coupled to a light emitting diode for DC input operation. Optical coupling between the input IR LED and output phototransistor allows for

PHP/PHD3055E. TrenchMOS standard level FET. Product availability: PHP3055E in SOT78 (TO-220AB) PHD3055E in SOT428 (D-PAK).

PHP/PHD355E Rev. 6 25 March 22 Product data 1. Description N-channel standard level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHP355E in SOT78

PHP/PHB/PHD45N03LTA. TrenchMOS logic level FET

Rev. 3 2 October 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PHP45N3LTA in SOT78 (TO-22AB)

QEB651 Surface Mount Infrared AlGaAs LED

QEB651 Surface Mount Infrared AlGaAs LED Features Wavelength 850nm High output Emission angle 30 o Surface mount miniature package Fast switching RoHS Compliant Package Dimensions Description The QEB651

NGTB30N120LWG IGBT. 30 A, 1200 V V CEsat = 1.75 V E off = 1.0 mj

NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.

ic-wg BLCC WGC OPTO ENCODER PACKAGE SPECIFICATION

Rev D1, Page 1/5 ORDERING INFORMATION Type Package Options Order Designation ic-wg BLCC WGC none ic-wg BLCC WGC ic-wg BLCC WGC reticle ic-wg BLCC WGC-WG1R WG1R Code Disc 13bit-Gray +2048 PPR A/B, d 44mm

PHP/PHB/PHD55N03LTA. TrenchMOS Logic Level FET

Rev. 4 4 September 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PHP55N3LTA in a SOT78 (TO-22AB)

DATA SHEET. PEMD48; PUMD48 NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS

DISCRETE SEMICONDUCTORS DATA SHEET NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω Supersedes data of 2004 Jun 02 2004 Jun 24 FEATURES Built-in bias resistors

Low-Voltage Analog Temperature Sensors in SC70 and SOT23 Packages

19-2040; Rev 1; 6/01 Low-Voltage Analog Temperature Sensors General Description The precision, low-voltage, analog output temperature sensors are available in 5-pin SC70 and SOT23 packages. The devices