van der Waals Heterostructures: Fabrication and Materials Issues
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1 van der Waals Heterostructures: Fabrication and Materials Issues J. Hone Columbia University Mechanical Engineering Center for Precision Assembly of Superstratic and Superatomic Solids (PAS 3 ) Columbia / CCNY MRSEC
2 ?(k< ) Graphene on SiO 2 Electrical Characterization of Gr Source Graphene Drain SiO 2 2 Si wafer (back gate) holes 1
3 14 Graphene 12 on SiO 2 10 ; (k< -1 ) holes T=2.1K % min &6e 2 /h V g (V) electrons Ambipolar, symmetric conduction Finite minimum conductivity ~ [4-10]e 2 /h Field-effect mobility up to 20,000 cm 2 /Vs Dirac Peak (charge FE Carrier mobility ) 1 d; e dn ) 1 c g d; dv g Michael S. Fuhre KITP Gra hen Week Universit of Mar land
4 14 Graphene 12 on SiO 2 10 ; (k< -1 ) holes T=2.1K % min &6e 2 /h V g (V) electrons Ambipolar, symmetric conduction Finite minimum conductivity ~ [4-10]e 2 /h Field-effect mobility up to 20,000 cm 2 /Vs Michael S. Fuhre KITP Gra hen Week Universit of Mar FE 1 d; ) ) e dn 1 c g d; dv Integer Quantum Hall effect (4-fold degenerate) g Novoselov, Geim, Science 2005; Zhang, Stormer, Kim, Nature 2005
5 Graphene on SiO 2 Martin, et al, Nature Phys. (2008) Charge traps and roughness in SiO 2 create large disorder, scattering Mobility far below theoretical limit Quantum Hall limited to integer states High-frequency FET performance limited
6 Boron Nitride Substrates for Graphene Resistivity (k ) news & views Watanabe, K., Taniguchi, T. & Kanda, H. Nature Mater. 3, (2004). Taniguchi, T. & Watanabe, K. J. Cryst. Growth 303, (2007). a Use polymer to stamp graphene onto BN BN multilayer SiO 2 substrate Graphene O Si b O Back gate voltage (V) Graphene C.R. Dean, A.F. Young, I. Meric, C. Lee, L. Wang, S.Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K.L. Shepard, J. Hone, Nature Nano (2010) Figure 1 Supporting graphene on hexagonal boron nitride (BN) substrates. a, Schematic showing how be p Sco D that thic stam is in f at grap nitr is fr imp topo bein si lic as a f eld in d wid
7 New Physics in BN-supported Graphene Observation of multiple FQHE states (Dean, Nat. Nano 2011) Hofstader Butterfly from graphene-bn moire pattern (Dean, Nature 2013; also MIT, Manchester groups) Moire pattern
8 Making Layered Structures The vision. Geim, Nature 2013
9 Making Layered Structures The reality Graphene BN 10 µm G BN
10 Making Layered Structures The reality Graphene BN 10 µm G BN BN G BN
11 Making Layered Structures The reality Graphene BN 10 µm polymer residue G BN BN G BN
12 Van der Waals Assembly and Edge Contacts Ultraclean technique graphene never exposed to polymer Edge contacts comparable to top contacts L. Wang et al, Science (2013)
13 Achieving ideal electrical performance Room T mobility at limit of acoustic phonon scattering. Highest R.T. mobility of any material! Ballistic at low T over 20 µm (µ > 10 6 )
14 Ultra-clean graphene: Physics and Applications 1.Hofstader Butterfly 2.Negative Refraction 3.Long-lived Plasmons 4.Exciton Condensation 5.Tunable bilayer graphene excitons 6.Graphene Light Emitter
15 Hofstader Butterfly with van der Waals Assembly L. Wang, JH, C. Dean, in preparation
16 Using Magnetic Focusing to Study Refraction S. Chen JH, A. Ghosh, C. Dean, Science (2017)
17 Long-lived Plasmons Woessner, Nature Materials (2015) Room T quality factor ~ K quality factor > 150! Ni, Basov (under review)
18 Exciton Condensation in Bilayer Graphene Superlattices J. Li, JH, C. Dean, Nature Physics (2017). Also P. Kim group
19 Localization in Quantum Wells. Phys Rev B 39, , doi:doi /PhysRevB (1989). Scale bar 10 mm. c. Photocurren and collect photocurrent. Excitons in Gapped Bilayer Graphene Excitons excited by incident light are dissociated into free ele electrical current under an external electric field. d. A typi Bandgap opens with vertical electric field bandgap-opened bilayer graphene taken at 10 K as the time continuously scanned. e. Photocurrent spectrum obtained b interferogram in d. Two sharp peaks (P1 and P2 indicated by lowest energy spectrum features. This spectrum could be absorption spectrum of bilayer graphene. Excitonic absorbtion peaks Extremely tunable response Figure 1. Device configuration and measurement scheme. a. The Mexican hat b of gated bilayer graphene at charge neutral condition. Higher energy bands are n L. Ju, L. Wang, JH, F. Rana,they F. Wang, P. the McEuen, (2017) are out of relevantscience energy range in this work. b. Optical micrograph of a d
20 Ultrafast Incandescent Visible Light Emission Stable emission for ~ few hours in air Stable emission for ~ 10 years in vacuum Speed exceeding 1 GHz! YD Kim et al, under review 20
21 New Control of Heterostructures 1.Making graphene even better! 2.Changing Interlayer Coupling 3.Interlayer Rotation 4.Contacts for air-sensitive materials
22 a How can we make graphene even better? Top BN is ignored for convinience Device description Use graphite as top / bottom gates: better electrostatic uniformity Use top gate to define channel region Adjust back gate / Magnetic field to maintain insulating (v=0) state
23 σ xx (e 2 /h) σ xx (e 2 /h) Qualitative Improvement in QHE a b xx (e2 /h) B=15 T T=300 mk 1/3 2/3 B=15 T T=300 mk 1/3 2/3 5/3 4/3 Etched σ Gate defined - metal 4/3 5/3 7/3 8/3 11/3 10/3 13/3 14/3 16/3 17/ xy (e2 /h) σxy (e2 /h) c B=15 T T=300 mk 5/3 1/3 2/3 Gate defined - graphite σ σxy (e2 /h) σ
24 Even-denominator FQHE States in Bilayer Graphene Li, JH, C. Dean, Science 2017
25 Tuning Interactions with Pressure M. Yankowitz, C. Dean
26 Controlling Interlayer Rotation: Graphene / BN V Moire pattern
27 R xx (kσ ) FWHM 2D (cm -1 ) Rotational Control of Multiple Properties Friction (a.u.) σ sat (mev) 35 Raman linewidth 75 Friction σ R (degrees) σσ (degree) 2,5 Electrronic Bandstructure Bandgaps 2,0 σσ=1.6 σσ= σ sat σ CNP 1,5 30 1,0 25 0, , V g -V cnp (V) σ R (degrees)
28 Air-sensitive 2D Materials FeSe FeTe FeSe x Te 1-x Air-sensitive materials CDW (1T-TaS 2, TaSe 2, VSe 2, TiSe 2 ) SDW (FeTe) Novel Phenomena 2H-TaS 2, TaSe 2, NbSe 2 SC (FeSe) FeTeS, FeTeSe
29 2D Stacking system in glovebox Horiba / AFM Computer Microscope Camera Horiba Raman Microscope Computer Signatone Transfer/Probe Station AFM Glovebox Control Panel Horiba Raman Microscope Power Strip Box Pressure Adjustment Foot Pedals Transfer Station Stage, Microscope, and Transfer Arm Controls Transfer Station Microscope Light Source Power Strip Vacuum/Heating Stage Temperature Controller Not Listed: Vacuum Pump for Vacuum/Heating Chuck (behind box); 2 N2 Gas Cylinders [Box + Vibration Isolators] (left-side of box); Antechambers [Large + Small] (right side of box) Encapsulate in glove box using hbn Fabricate electrodes etc. afterward
30 Superconductivity in BN-encapsulated bilayer NbSe 2 2-layer NbSe 2 AW Tsen, B Hunt, YD Kim, ZJ Yuan, S Jia, RJ Cava, J Hone, P Kim, CR Dean, AN Pasupathy, Nature Physics (2016)
31 Metal BN via contacts Combine contacts and encapsulation in one step Excellent protection from atmosphere! E. Telford et al, Submitted
32 BN-encapsulated 2D Semiconductors Electrical transport Improved contacts Materials quality
33 Encapsulated MoS 2 with graphene contacts X. Cui, G. H. Lee et al.,nature Nano (2015)
34 Multi-terminal transport B (T) BN-encapsulated MoS 2 30 R xx (kω) X improvement in low-t mobility Consistent phonon-limited transport at RT First SdH oscillations V BG (V)
35 Hybrid Metal / hbn Contacts to MoS 2 Theory: strong hybridization between transition metals and hbn/graphene strongly shifts work function (M. Farmanbar et al. PRB. (2016)) Device Schematic 1L MoS 2 1L BN top layer Co electrodes
36 R c (kw.mm) Hybrid Metal / hbn Contacts 1000 Au contact no 1L BN torr 1L BN graphene contact torr 1L BN 1.7 K n (x10 12 /cm 2 ) 2
37 Atomic defects in TMDs I tunnel MoSe 2 Mo sub. (donor) E gap (pristine) E gap (defect) MoSe 2 Mo vacancy (acceptor) E gap (pristine) E gap (defect) tip bias In single crystal samples, most common vacancies are Transition Metal vacancies and substituents * not chalcogen vacancies* tip bias STM / STS: Pasupathy group
38 CVT growth vs. Flux Growth > defects/cm 2 5 X defects/cm 2
39 STEM Imaging: Flux-grown WSe 2 WSe2-200kV-STEM-CondApt Mx-SpotSize9-CL205mm-C2(27.82)-FrameTime20s-12
40 Flux-grown material Optical properties Enhanced PL Yield First (Columbia) observation of CT exciton photoluminescence
41 Landau Fan measured by capacitance CVT-grown WSe 2 Flux-grown WSe 2
42 Major Contributors Hone group: Y-D Kim Lei Wang Yuanda Gao Alex Cui Ghidewon Arefe Demi Ajayi Jenny Ardelean Julia Zhang Dean group: Rebeca Ribeiro Matt Yankowitz Shaowen Chen Jia Li En-min Shih Pasupathy group Drew Edelberg Kim group (Harvard) S. Strauf group (Stevens Inst.) T. Taniguchi, K. Watanabe (NIMS, Japan) Funding: NSF MRSEC, NSF DMR, SRC / INDEX, DOE BES, ONR, AFOSR BRI 42
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