Greg Andreev and Aravind Vijayaraghavan 9/27/13

Size: px
Start display at page:

Download "Greg Andreev and Aravind Vijayaraghavan 9/27/13"

Transcription

1 Mapping Graphene s surface potential with <20nm resolution: A PeakForce KPFM study in a controlled <1ppm water and oxygen environment Greg Andreev and Aravind Vijayaraghavan 9/27/13

2 Webinar Outline Introduction to Graphene by Aravind Introduction to PF-KPFM Results on Graphene in Air and Glovebox Questions Potential 100mV 250nm -100mV 2

3 An introduction to graphene and the importance of environment Dr. Aravind Vijayaraghavan The University of Manchester Bruker Webinar "Mapping Graphene s Surface Potential with less than 20nm Resolution"

4 WHAT IS GRAPHENE Graphene is imensional Buckyballs Carbon Nanotubes Graphite A. K. Geim, K. S. Novoselov Nat Mater 2007, 6, 183.

5 HOW TO MAKE GRAPHENE 1. Micromechanical cleavage of Graphite (a) Attach a piece of graphite to sticky-tape (Cellotape) (b) Use the sticky tape to thin out the graphite (c) Place the thin graphite on a Silicon wafer, with a surface layer of Silicon Dioxide (d) Remove most layers of graphite leaving behind graphene.

6 HOW TO MAKE GRAPHENE 2. Chemical Vapour deposition (a)carbon atoms are deposited on the surface of a metal (b)at high temperature this forms graphene. (c) A layer of polymer is deposited on top of the graphene. (d)the polymer is removed and the graphene with it. (e)the polymer is placed on a suitable substrate (f) The polymer is dissolved away leaving the graphene behind.

7 HOW TO FIND GRAPHENE Seeing is believing! P. Blake, et al., Appl. Phys. Lett. 2007, 91,

8 ELECTRONIC STRUCTURE Electronically, monolayer, bilayers and trilayer graphene are electronically distinct materials. Beyond three layers, graphene s electronic properties tends towards that of bulk graphite. Monolayer Graphene T. Ohta, et al., Science 2006, 313, 951.

9 EFFECT OF ENVIRONMENT Ponomarenko, L. A.; et. al. (2009). Physical Review Letters 102(20):

10 EFFECT OF DOPING Schedin, F., et al (2007). Nature Materials, 6(9), Changes in resistivity, at zero B caused by graphene s exposure to various gases diluted in concentration to 1 p.p.m. The positive (negative) sign of changes is chosen here to indicate electron (hole) doping. Region I: the device is in vacuum before its exposure; II: exposure to a 5 l volume of a diluted chemical; III: evacuation of the experimental set-up; and IV: annealing at 150 C.

11 Before getting into KPFM: Lift mode 2nd trace 1st trace Magnetic field source Lift Height Topography LiftMode: Separates topography from the electric/magnetic info: long range vs. short range forces, on active or passive devices. Surface Potential: measure the surface potential together with topography. 3

12 KPFM basic principle KPFM measures the work function difference of tip/sample. AM FM Amplitude-Modulation Frequency-Modulation Better spatial resolution Better accuracy Physical Review B 2005, 71(12)

13 Many Ways of Doing KPFM FM and PeakForce scaling do not compete Tapping is limited to high k levers due to adhesive forces. PeakForce Tapping k is not. KPFM AFM Tapping PeakForce Both AM & FM KPFM improves with lower k AM FM TP-AM TP-FM PeakForce KPFM-AM PeakForce KPFM *Except TP-FM, all are done in lift-mode. 5

14 PeakForce KPFM combines FM with PFT Allows for higher sensitivity KKKK SSSSSSSSSSS But Tapping Mode Requires : k to be not too small Q not to be too big Tapping and KPFM scaling in conflict. Q k Peak Force Tapping Mode Allows Freedom to use: Smaller k (10x or more) Big Q (10x or more) PeakForce Tapping and KPFM scaling aligned. 6

15 KPFM: nanoscale measurement of Work Function, Fermi Energy & Carrier Density Previous work shows Work Function relationship to E fermi for Graphene Bilayer Single layer Y. Yu et. al. NanoLett. (9) KPFM can be used as a nanoscale measurement of Fermi energy 7

16 Energy diagram of our KPFM experiment on Graphene Vacuum level W a Approx. Values W tip W tip ~ 4.5eV W smp W 0 gr W elec ~ 4.9eV e VVVV W elec E F W 0 gr ~ 4.6eV W a ~ 0.05eV What KPFM measures E F ~±0.3eV Energy band diagram of 1L Graphene (holedoped) 8

17 Our sample: Single layer Graphene on a Silicon Nitride window 14.5nm AFM 1um Optical Microscope (Blue filter) 25um SiN window 1L Graphene 0nm SiN window 1L Graphene Why this sample? Largely insulating substrate KPFM should probe only Graphene, little crosstalk Roughness may create interesting inhomogeneities 9 Au

18 Results (in Air): PF-KPFM on Graphene shows incredible contrast AFM Linear debris clearly visible 1um Potential Linear debris does not show up! 500mV <40nm gap b/n layers barely visible in Height <40nm gap b/n layers clearly visible -200mV Hole doping of Graphene confirmed, W g ~ 4.85V Signs of incredible nanoscale contrast, is it real? 10

19 Lift height dependence: a way to check for topographic artificats in KPFM Example From Bruker App. note #140 11

20 Proof of real contrast: evolution of PF- KPFM resolution w/ lift height Lift Height 28nm 40nm 50nm 75nm 1um No sudden loss of resolution = contrast not due to tip sticking 12

21 Let s zoom in on an interesting region.. 1um 14.5nm 13 0nm

22 Zooming in: how homogeneous is Graphene? Height 250nm 11nm Adhesion 11nN 0nm 6nN Substrate residue easily picked up by Adhesion channel Will it have some effect on Graphene s work function? 14

23 PF-KPFM of zoomed-in region: <20nm resolution reveals inhomogeneities Potential, z = 28nm +100mV Similar result to previous work: 4.85V 250nm mV 100mV 50mV 20nm wide hump resolved! 0mV J. Martin et. al. Nature

24 Bruker PF-KPFM: inhomogeneities correlate with high potential Adhesion 11nN Adhesion+High Potential 11nN 6nN 6nN PF-KPFM adhesion channel makes it easy to see the inhomogeneities! Is the doping mechanism here also related to Water + Oxygen as in previous work? scale bar = 250nm 16

25 What is the effect of the environment on Graphene doping? Water? Oxygen? Is it reversible? An environmentally controlled measurement is needed.. Cryogenic UHV KPFM would be great, but difficult/costly Is there an easier way to study Graphene in a H2O+O2 free environment? 17

26 Unique Bruker technology: Glovebox Integrated System Argon Atmosphere, <1ppm H2O, 1ppm O2 Antechamber for introducing samples, pressure below 1E-6mbar 18

27 Physical picture: what we expect to happen Ambient GloveBox Vacuum level W a W elec W smp W 0 gr E F W tip e VVVV E F Graphene is hole doped by Water and Oxygen Water and Oxygen removed, Graphene nearly intrinsic Potential for studying nearly-intrinsic Graphene without Cryogenics or UHV 19

28 Physical picture confirmed: PF-KPFM in GloveBox shows lower contrast Ambient 500mV GloveBox 150mV -200mV Contrast between Graphene and SiN greatly reduced -150mV Spatial inhomogeneities in Graphene also reduced 20

29 Physical picture confirmed: PF-KPFM in GloveBox shows lower contrast Ambient 500mV GloveBox (same scale) 500mV -200mV -200mV Graphene signal is nearly that of an insulator 21

30 Inhomogeneities greatly reduced in Glovebox Air +100mV Glovebox +100mV Potential 4.85V ~4.6V -100mV 250nm -100mV AFM 22

31 Another sample: larger KPFM scan Potential in Air Three vastly different potentials for Graphene? SiN Au Graphene mV 93mV Graphene SiN Au 23

32 KPFM Potential, in Glovebox before vacuum SiN/chuck 334mV 133mV Graphene Au Au SiN Graphene Glovebox environment reduced Graphene workfunction by ~100mV KPFM Potential, in Glovebox after vacuum 284mV 193mV W g ~ 4.7eV near Au contact, smaller farther away 24

33 Conclusion PF-KPFM s spatial resolution is great: 20nm resolution images are achievable on Graphene PF-KPFM is sensitive: ~10meV sensitivity allows to easily distinguish inhomogeneities Glovebox Integrated System is a convenient promising environment for reducing Graphene s work function to nearly intrinsic levels. 25

34 Backup slides 26

35 Tip Cone Contribution in KPFM FM gradient detection isolates contribution from tip Cone Contribution% 100% 90% 80% 70% 60% 50% 40% 30% 20% 10% FM z=10 nm FM z=50 nm AM z=10 nm 0% 0% 0% 1% AM 10% z=50 nm 100% Height Inclusion (h/h)% Based on SCM-PIT Geometry: W=30um, L=225um, H=10um, Cone Angle=45 FM-KPFM: The foremost 0.3% of the tip cone accounts for half of the signal in. FM can achieve a lateral resolution better than 50nm. AM-KPFM The contribution from the tip cone never reaches 50%. Its lateral resolution is dictated by the um-scale lever. 27

Intrinsic Electronic Transport Properties of High. Information

Intrinsic Electronic Transport Properties of High. Information Intrinsic Electronic Transport Properties of High Quality and MoS 2 : Supporting Information Britton W. H. Baugher, Hugh O. H. Churchill, Yafang Yang, and Pablo Jarillo-Herrero Department of Physics, Massachusetts

More information

Supplementary Figure 1: Micromechanical cleavage of graphene on oxygen plasma treated Si/SiO2. Supplementary Figure 2: Comparison of hbn yield.

Supplementary Figure 1: Micromechanical cleavage of graphene on oxygen plasma treated Si/SiO2. Supplementary Figure 2: Comparison of hbn yield. 1 2 3 4 Supplementary Figure 1: Micromechanical cleavage of graphene on oxygen plasma treated Si/SiO 2. Optical microscopy images of three examples of large single layer graphene flakes cleaved on a single

More information

Optimizing Graphene Morphology on SiC(0001)

Optimizing Graphene Morphology on SiC(0001) Optimizing Graphene Morphology on SiC(0001) James B. Hannon Rudolf M. Tromp Graphene sheets Graphene sheets can be formed into 0D,1D, 2D, and 3D structures Chemically inert Intrinsically high carrier mobility

More information

Graphene films on silicon carbide (SiC) wafers supplied by Nitride Crystals, Inc.

Graphene films on silicon carbide (SiC) wafers supplied by Nitride Crystals, Inc. 9702 Gayton Road, Suite 320, Richmond, VA 23238, USA Phone: +1 (804) 709-6696 info@nitride-crystals.com www.nitride-crystals.com Graphene films on silicon carbide (SiC) wafers supplied by Nitride Crystals,

More information

Supplementary Figure S1. AFM images of GraNRs grown with standard growth process. Each of these pictures show GraNRs prepared independently,

Supplementary Figure S1. AFM images of GraNRs grown with standard growth process. Each of these pictures show GraNRs prepared independently, Supplementary Figure S1. AFM images of GraNRs grown with standard growth process. Each of these pictures show GraNRs prepared independently, suggesting that the results is reproducible. Supplementary Figure

More information

A BIT OF MATERIALS SCIENCE THEN PHYSICS

A BIT OF MATERIALS SCIENCE THEN PHYSICS GRAPHENE AND OTHER D ATOMIC CRYSTALS Andre Geim with many thanks to K. Novoselov, S. Morozov, D. Jiang, F. Schedin, I. Grigorieva, J. Meyer, M. Katsnelson A BIT OF MATERIALS SCIENCE THEN PHYSICS CARBON

More information

Supplementary information for Tunneling Spectroscopy of Graphene-Boron Nitride Heterostructures

Supplementary information for Tunneling Spectroscopy of Graphene-Boron Nitride Heterostructures Supplementary information for Tunneling Spectroscopy of Graphene-Boron Nitride Heterostructures F. Amet, 1 J. R. Williams, 2 A. G. F. Garcia, 2 M. Yankowitz, 2 K.Watanabe, 3 T.Taniguchi, 3 and D. Goldhaber-Gordon

More information

GRAPHENE ON THE Si-FACE OF SILICON CARBIDE USER MANUAL

GRAPHENE ON THE Si-FACE OF SILICON CARBIDE USER MANUAL GRAPHENE ON THE Si-FACE OF SILICON CARBIDE USER MANUAL 1. INTRODUCTION Silicon Carbide (SiC) is a wide band gap semiconductor that exists in different polytypes. The substrate used for the fabrication

More information

Graphene FETs EE439 FINAL PROJECT. Yiwen Meng Su Ai

Graphene FETs EE439 FINAL PROJECT. Yiwen Meng Su Ai Graphene FETs EE439 FINAL PROJECT Yiwen Meng Su Ai Introduction What is Graphene? An atomic-scale honeycomb lattice made of carbon atoms Before 2004, Hypothetical Carbon Structure Until 2004, physicists

More information

Wafer-scale fabrication of graphene

Wafer-scale fabrication of graphene Wafer-scale fabrication of graphene Sten Vollebregt, MSc Delft University of Technology, Delft Institute of Mircosystems and Nanotechnology Delft University of Technology Challenge the future Delft University

More information

Overview. Carbon in all its forms. Background & Discovery Fabrication. Important properties. Summary & References. Overview of current research

Overview. Carbon in all its forms. Background & Discovery Fabrication. Important properties. Summary & References. Overview of current research Graphene Prepared for Solid State Physics II Pr Dagotto Spring 2009 Laurene Tetard 03/23/09 Overview Carbon in all its forms Background & Discovery Fabrication Important properties Overview of current

More information

Program Operacyjny Kapitał Ludzki SCANNING PROBE TECHNIQUES - INTRODUCTION

Program Operacyjny Kapitał Ludzki SCANNING PROBE TECHNIQUES - INTRODUCTION Program Operacyjny Kapitał Ludzki SCANNING PROBE TECHNIQUES - INTRODUCTION Peter Liljeroth Department of Applied Physics, Aalto University School of Science peter.liljeroth@aalto.fi Projekt współfinansowany

More information

Supplementary Figure 1 Experimental setup for crystal growth. Schematic drawing of the experimental setup for C 8 -BTBT crystal growth.

Supplementary Figure 1 Experimental setup for crystal growth. Schematic drawing of the experimental setup for C 8 -BTBT crystal growth. Supplementary Figure 1 Experimental setup for crystal growth. Schematic drawing of the experimental setup for C 8 -BTBT crystal growth. Supplementary Figure 2 AFM study of the C 8 -BTBT crystal growth

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION Dirac cones reshaped by interaction effects in suspended graphene D. C. Elias et al #1. Experimental devices Graphene monolayers were obtained by micromechanical cleavage of graphite on top of an oxidized

More information

TRANSVERSE SPIN TRANSPORT IN GRAPHENE

TRANSVERSE SPIN TRANSPORT IN GRAPHENE International Journal of Modern Physics B Vol. 23, Nos. 12 & 13 (2009) 2641 2646 World Scientific Publishing Company TRANSVERSE SPIN TRANSPORT IN GRAPHENE TARIQ M. G. MOHIUDDIN, A. A. ZHUKOV, D. C. ELIAS,

More information

Supporting information

Supporting information Supporting information Influence of electrolyte composition on liquid-gated carbon-nanotube and graphene transistors By: Iddo Heller, Sohail Chatoor, Jaan Männik, Marcel A. G. Zevenbergen, Cees Dekker,

More information

Accurate thickness measurement of graphene

Accurate thickness measurement of graphene Accurate thickness measurement of graphene Cameron J Shearer *, Ashley D Slattery, Andrew J Stapleton, Joseph G Shapter and Christopher T Gibson * Centre for NanoScale Science and Technology, School of

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION SUPPLEMENTARY INFORMATION SUPPLEMENTARY INFORMATION Trilayer graphene is a semimetal with a gate-tuneable band overlap M. F. Craciun, S. Russo, M. Yamamoto, J. B. Oostinga, A. F. Morpurgo and S. Tarucha

More information

TEOS characterization of 2D materials from graphene to TMDCs

TEOS characterization of 2D materials from graphene to TMDCs Marc Chaigneau Yoshito Okuno, Andrey Krayev, Filippo Fabbri HORIBA Scientific AIST-NT Inc. IMEM-CNR Institute TEOS characterization of 2D materials from graphene to TMDCs 30-03-2017 Graphene2017 2015 2017

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION 1. Supplementary Methods Characterization of AFM resolution We employed amplitude-modulation AFM in non-contact mode to characterize the topography of the graphene samples. The measurements were performed

More information

Supporting Information. by Hexagonal Boron Nitride

Supporting Information. by Hexagonal Boron Nitride Supporting Information High Velocity Saturation in Graphene Encapsulated by Hexagonal Boron Nitride Megan A. Yamoah 1,2,, Wenmin Yang 1,3, Eric Pop 4,5,6, David Goldhaber-Gordon 1 * 1 Department of Physics,

More information

Graphene and Carbon Nanotubes

Graphene and Carbon Nanotubes Graphene and Carbon Nanotubes 1 atom thick films of graphite atomic chicken wire Novoselov et al - Science 306, 666 (004) 100μm Geim s group at Manchester Novoselov et al - Nature 438, 197 (005) Kim-Stormer

More information

Supplementary Information for

Supplementary Information for Supplementary Information for Highly Stable, Dual-Gated MoS 2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact Resistance and Threshold Voltage Gwan-Hyoung Lee, Xu Cui,

More information

Carbon based Nanoscale Electronics

Carbon based Nanoscale Electronics Carbon based Nanoscale Electronics 09 02 200802 2008 ME class Outline driving force for the carbon nanomaterial electronic properties of fullerene exploration of electronic carbon nanotube gold rush of

More information

Surface Transfer Doping of Diamond by Organic Molecules

Surface Transfer Doping of Diamond by Organic Molecules Surface Transfer Doping of Diamond by Organic Molecules Qi Dongchen Department of Physics National University of Singapore Supervisor: Prof. Andrew T. S. Wee Dr. Gao Xingyu Scope of presentation Overview

More information

Transparent Electrode Applications

Transparent Electrode Applications Transparent Electrode Applications LCD Solar Cells Touch Screen Indium Tin Oxide (ITO) Zinc Oxide (ZnO) - High conductivity - High transparency - Resistant to environmental effects - Rare material (Indium)

More information

Instrumentation and Operation

Instrumentation and Operation Instrumentation and Operation 1 STM Instrumentation COMPONENTS sharp metal tip scanning system and control electronics feedback electronics (keeps tunneling current constant) image processing system data

More information

Electronic states on the surface of graphite

Electronic states on the surface of graphite Electronic states on the surface of graphite Guohong Li, Adina Luican, Eva Y. Andrei * Department of Physics and Astronomy, Rutgers Univsersity, Piscataway, NJ 08854, USA Elsevier use only: Received date

More information

Module 26: Atomic Force Microscopy. Lecture 40: Atomic Force Microscopy 3: Additional Modes of AFM

Module 26: Atomic Force Microscopy. Lecture 40: Atomic Force Microscopy 3: Additional Modes of AFM Module 26: Atomic Force Microscopy Lecture 40: Atomic Force Microscopy 3: Additional Modes of AFM 1 The AFM apart from generating the information about the topography of the sample features can be used

More information

Monolayer Semiconductors

Monolayer Semiconductors Monolayer Semiconductors Gilbert Arias California State University San Bernardino University of Washington INT REU, 2013 Advisor: Xiaodong Xu (Dated: August 24, 2013) Abstract Silicon may be unable to

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION SUPPLEMENTARY INFORMATION DOI: 10.1038/NNANO.2011.123 Ultra-strong Adhesion of Graphene Membranes Steven P. Koenig, Narasimha G. Boddeti, Martin L. Dunn, and J. Scott Bunch* Department of Mechanical Engineering,

More information

An account of our efforts towards air quality monitoring in epitaxial graphene on SiC

An account of our efforts towards air quality monitoring in epitaxial graphene on SiC European Network on New Sensing Technologies for Air Pollution Control and Environmental Sustainability - EuNetAir COST Action TD1105 2 nd International Workshop EuNetAir on New Sensing Technologies for

More information

GRAPHENE the first 2D crystal lattice

GRAPHENE the first 2D crystal lattice GRAPHENE the first 2D crystal lattice dimensionality of carbon diamond, graphite GRAPHENE realized in 2004 (Novoselov, Science 306, 2004) carbon nanotubes fullerenes, buckyballs what s so special about

More information

Graphene Novel Material for Nanoelectronics

Graphene Novel Material for Nanoelectronics Graphene Novel Material for Nanoelectronics Shintaro Sato Naoki Harada Daiyu Kondo Mari Ohfuchi (Manuscript received May 12, 2009) Graphene is a flat monolayer of carbon atoms with a two-dimensional honeycomb

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION SUPPLEMENTARY INFORMATION Facile Synthesis of High Quality Graphene Nanoribbons Liying Jiao, Xinran Wang, Georgi Diankov, Hailiang Wang & Hongjie Dai* Supplementary Information 1. Photograph of graphene

More information

Spatially resolving density-dependent screening around a single charged atom in graphene

Spatially resolving density-dependent screening around a single charged atom in graphene Supplementary Information for Spatially resolving density-dependent screening around a single charged atom in graphene Dillon Wong, Fabiano Corsetti, Yang Wang, Victor W. Brar, Hsin-Zon Tsai, Qiong Wu,

More information

Physics in two dimensions in the lab

Physics in two dimensions in the lab Physics in two dimensions in the lab Nanodevice Physics Lab David Cobden PAB 308 Collaborators at UW Oscar Vilches (Low Temperature Lab) Xiaodong Xu (Nanoscale Optoelectronics Lab) Jiun Haw Chu (Quantum

More information

Special Properties of Au Nanoparticles

Special Properties of Au Nanoparticles Special Properties of Au Nanoparticles Maryam Ebrahimi Chem 7500/750 March 28 th, 2007 1 Outline Introduction The importance of unexpected electronic, geometric, and chemical properties of nanoparticles

More information

b imaging by a double tip potential

b imaging by a double tip potential Supplementary Figure Measurement of the sheet conductance. Resistance as a function of probe spacing including D and 3D fits. The distance is plotted on a logarithmic scale. The inset shows corresponding

More information

Initial Stages of Growth of Organic Semiconductors on Graphene

Initial Stages of Growth of Organic Semiconductors on Graphene Initial Stages of Growth of Organic Semiconductors on Graphene Presented by: Manisha Chhikara Supervisor: Prof. Dr. Gvido Bratina University of Nova Gorica Outline Introduction to Graphene Fabrication

More information

Supplementary Figure 1. Selected area electron diffraction (SAED) of bilayer graphene and tblg. (a) AB

Supplementary Figure 1. Selected area electron diffraction (SAED) of bilayer graphene and tblg. (a) AB Supplementary Figure 1. Selected area electron diffraction (SAED) of bilayer graphene and tblg. (a) AB stacked bilayer graphene (b), (c), (d), (e), and (f) are twisted bilayer graphene with twist angle

More information

Supporting information. Gate-optimized thermoelectric power factor in ultrathin WSe2 single crystals

Supporting information. Gate-optimized thermoelectric power factor in ultrathin WSe2 single crystals Supporting information Gate-optimized thermoelectric power factor in ultrathin WSe2 single crystals Masaro Yoshida 1, Takahiko Iizuka 1, Yu Saito 1, Masaru Onga 1, Ryuji Suzuki 1, Yijin Zhang 1, Yoshihiro

More information

Noncontact-AFM (nc-afm)

Noncontact-AFM (nc-afm) Noncontact-AFM (nc-afm) Quantitative understanding of nc-afm A attractive interaction Δf Resonance frequency: f 0 Width of resonance curve (FWHM): Γ Γ+ΔΓ Γ Q-factor: Q π f Γ = 0 f 0 f Conservative forces

More information

A. Optimizing the growth conditions of large-scale graphene films

A. Optimizing the growth conditions of large-scale graphene films 1 A. Optimizing the growth conditions of large-scale graphene films Figure S1. Optical microscope images of graphene films transferred on 300 nm SiO 2 /Si substrates. a, Images of the graphene films grown

More information

Supplementary Materials to Addressable Photo-Charging of Single Quantum Dots Assisted with Atomic Force Microscopy Probe

Supplementary Materials to Addressable Photo-Charging of Single Quantum Dots Assisted with Atomic Force Microscopy Probe Supplementary Materials to Addressable Photo-Charging of Single Quantum Dots Assisted with Atomic Force Microscopy Probe M. Dokukin 1, R. Olac-Vaw 2, N. Guz 1, V. Mitin 2, and I. Sokolov 1,* 1 Dept. of

More information

SUPPLEMENTARY NOTES Supplementary Note 1: Fabrication of Scanning Thermal Microscopy Probes

SUPPLEMENTARY NOTES Supplementary Note 1: Fabrication of Scanning Thermal Microscopy Probes SUPPLEMENTARY NOTES Supplementary Note 1: Fabrication of Scanning Thermal Microscopy Probes Fabrication of the scanning thermal microscopy (SThM) probes is summarized in Supplementary Fig. 1 and proceeds

More information

Figure 1: Graphene release, transfer and stacking processes. The graphene stacking began with CVD

Figure 1: Graphene release, transfer and stacking processes. The graphene stacking began with CVD Supplementary figure 1 Graphene Growth and Transfer Graphene PMMA FeCl 3 DI water Copper foil CVD growth Back side etch PMMA coating Copper etch in 0.25M FeCl 3 DI water rinse 1 st transfer DI water 1:10

More information

Carbon Nanomaterials

Carbon Nanomaterials Carbon Nanomaterials STM Image 7 nm AFM Image Fullerenes C 60 was established by mass spectrographic analysis by Kroto and Smalley in 1985 C 60 is called a buckminsterfullerene or buckyball due to resemblance

More information

Supplementary Figure 1: MoS2 crystals on WSe2-EG and EG and WSe2 crystals on MoSe2-EG and EG.

Supplementary Figure 1: MoS2 crystals on WSe2-EG and EG and WSe2 crystals on MoSe2-EG and EG. Supplementary Figure 1: MoS2 crystals on WSe2-EG and EG and WSe2 crystals on MoSe2-EG and EG. (a) The MoS2 crystals cover both of EG and WSe2/EG after the CVD growth (Scar bar: 400 nm) (b) shows TEM profiles

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION SUPPLEMENTARY INFORMATION Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide Supporting online material Konstantin V. Emtsev 1, Aaron Bostwick 2, Karsten Horn

More information

Basic Laboratory. Materials Science and Engineering. Atomic Force Microscopy (AFM)

Basic Laboratory. Materials Science and Engineering. Atomic Force Microscopy (AFM) Basic Laboratory Materials Science and Engineering Atomic Force Microscopy (AFM) M108 Stand: 20.10.2015 Aim: Presentation of an application of the AFM for studying surface morphology. Inhalt 1.Introduction...

More information

STM: Scanning Tunneling Microscope

STM: Scanning Tunneling Microscope STM: Scanning Tunneling Microscope Basic idea STM working principle Schematic representation of the sample-tip tunnel barrier Assume tip and sample described by two infinite plate electrodes Φ t +Φ s =

More information

Scanning Tunneling Microscopy

Scanning Tunneling Microscopy Scanning Tunneling Microscopy Scanning Direction References: Classical Tunneling Quantum Mechanics Tunneling current Tunneling current I t I t (V/d)exp(-Aφ 1/2 d) A = 1.025 (ev) -1/2 Å -1 I t = 10 pa~10na

More information

Supplemental material: Transient thermal characterization of suspended monolayer MoS 2

Supplemental material: Transient thermal characterization of suspended monolayer MoS 2 Supplemental material: Transient thermal characterization of suspended monolayer MoS Robin J. Dolleman,, David Lloyd, Martin Lee, J. Scott Bunch,, Herre S. J. van der Zant, and Peter G. Steeneken, Kavli

More information

Correlated 2D Electron Aspects of the Quantum Hall Effect

Correlated 2D Electron Aspects of the Quantum Hall Effect Correlated 2D Electron Aspects of the Quantum Hall Effect Magnetic field spectrum of the correlated 2D electron system: Electron interactions lead to a range of manifestations 10? = 4? = 2 Resistance (arb.

More information

The Low Temperature Physics of Thin Films Superconducting Tin and Monolayer Graphene

The Low Temperature Physics of Thin Films Superconducting Tin and Monolayer Graphene The Low Temperature Physics of Thin Films Superconducting Tin and Monolayer Graphene Abstract: The aim of this project was to investigate how the electrical resistance of a conductor changes if it is deposited

More information

Graphite, graphene and relativistic electrons

Graphite, graphene and relativistic electrons Graphite, graphene and relativistic electrons Introduction Physics of E. graphene Y. Andrei Experiments Rutgers University Transport electric field effect Quantum Hall Effect chiral fermions STM Dirac

More information

Supplementary Figure 1 Dark-field optical images of as prepared PMMA-assisted transferred CVD graphene films on silicon substrates (a) and the one

Supplementary Figure 1 Dark-field optical images of as prepared PMMA-assisted transferred CVD graphene films on silicon substrates (a) and the one Supplementary Figure 1 Dark-field optical images of as prepared PMMA-assisted transferred CVD graphene films on silicon substrates (a) and the one after PBASE monolayer growth (b). 1 Supplementary Figure

More information

Frictional characteristics of exfoliated and epitaxial graphene

Frictional characteristics of exfoliated and epitaxial graphene Frictional characteristics of exfoliated and epitaxial graphene Young Jun Shin a,b, Ryan Stromberg c, Rick Nay c, Han Huang d, Andrew T. S. Wee d, Hyunsoo Yang a,b,*, Charanjit S. Bhatia a a Department

More information

Supplementary Figure 1 Magneto-transmission spectra of graphene/h-bn sample 2 and Landau level transition energies of three other samples.

Supplementary Figure 1 Magneto-transmission spectra of graphene/h-bn sample 2 and Landau level transition energies of three other samples. Supplementary Figure 1 Magneto-transmission spectra of graphene/h-bn sample 2 and Landau level transition energies of three other samples. (a,b) Magneto-transmission ratio spectra T(B)/T(B 0 ) of graphene/h-bn

More information

Graphene FETs with Combined Structure and Transparent Top

Graphene FETs with Combined Structure and Transparent Top Available online at www.sciencedirect.com Physics Procedia 32 (2012 ) 869 874 18th International Vacuum Congress (IVC-18) Graphene FETs with Combined Structure and Transparent Top Yuanlin Yuan a, Zhen

More information

Wafer Scale Homogeneous Bilayer Graphene Films by. Chemical Vapor Deposition

Wafer Scale Homogeneous Bilayer Graphene Films by. Chemical Vapor Deposition Supporting Information for Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition Seunghyun Lee, Kyunghoon Lee, Zhaohui Zhong Department of Electrical Engineering and Computer Science,

More information

background (the broad feature running bottom left to top right is a smooth depression 100 pm deep).

background (the broad feature running bottom left to top right is a smooth depression 100 pm deep). d e amplitude (arb.) c amplitude (arb.) a 2 1 5 1 kvertical (μm-1) 2 1 15 16 17 kradial (μm-1) height (pm) b 2-2 5 1 lateral position (nm) 15 2 Supplementary Figure 1: Uniformity of stripe-superlattice

More information

Dopant Concentration Measurements by Scanning Force Microscopy

Dopant Concentration Measurements by Scanning Force Microscopy 73.40L Scanning Microsc. Microanal. Microstruct. 551 Classification Physics Abstracts - - 61.16P 73.00 Dopant Concentration Measurements by Scanning Force Microscopy via p-n Junctions Stray Fields Jacopo

More information

Outline Scanning Probe Microscope (SPM)

Outline Scanning Probe Microscope (SPM) AFM Outline Scanning Probe Microscope (SPM) A family of microscopy forms where a sharp probe is scanned across a surface and some tip/sample interactions are monitored Scanning Tunneling Microscopy (STM)

More information

CVD-3 MFSIN-HU-1 SiN x Mixed Frequency Process

CVD-3 MFSIN-HU-1 SiN x Mixed Frequency Process CVD-3 MFSIN-HU-1 SiN x Mixed Frequency Process Standard MFSIN-HU-1 Process Top C Bottom C Pump to Base Time (s) SiH 4 Flow HF/ LF NH 3 Flow HF/LF N 2 HF/LF HF (watts) LF (watts) HF Time LF Time Pressure

More information

NiCl2 Solution concentration. Etching Duration. Aspect ratio. Experiment Atmosphere Temperature. Length(µm) Width (nm) Ar:H2=9:1, 150Pa

NiCl2 Solution concentration. Etching Duration. Aspect ratio. Experiment Atmosphere Temperature. Length(µm) Width (nm) Ar:H2=9:1, 150Pa Experiment Atmosphere Temperature #1 # 2 # 3 # 4 # 5 # 6 # 7 # 8 # 9 # 10 Ar:H2=9:1, 150Pa Ar:H2=9:1, 150Pa Ar:H2=9:1, 150Pa Ar:H2=9:1, 150Pa Ar:H2=9:1, 150Pa Ar:H2=9:1, 150Pa Ar:H2=9:1, 150Pa Ar:H2=9:1,

More information

Paolo Bondavalli NANOCARB Unité mixte de Recherche Thales/CNRS

Paolo Bondavalli NANOCARB Unité mixte de Recherche Thales/CNRS Gas Sensor based on CNTFETs fabricated using an Original Dynamic Air-Brush technique for SWCNTs deposition 10/09/2010 Paolo Bondavalli NANOCARB Unité mixte de Recherche Thales/CNRS Thales Research and

More information

DEPOSITION OF THIN TiO 2 FILMS BY DC MAGNETRON SPUTTERING METHOD

DEPOSITION OF THIN TiO 2 FILMS BY DC MAGNETRON SPUTTERING METHOD Chapter 4 DEPOSITION OF THIN TiO 2 FILMS BY DC MAGNETRON SPUTTERING METHOD 4.1 INTRODUCTION Sputter deposition process is another old technique being used in modern semiconductor industries. Sputtering

More information

Graphene Fundamentals and Emergent Applications

Graphene Fundamentals and Emergent Applications Graphene Fundamentals and Emergent Applications Jamie H. Warner Department of Materials University of Oxford Oxford, UK Franziska Schaffel Department of Materials University of Oxford Oxford, UK Alicja

More information

General concept and defining characteristics of AFM. Dina Kudasheva Advisor: Prof. Mary K. Cowman

General concept and defining characteristics of AFM. Dina Kudasheva Advisor: Prof. Mary K. Cowman General concept and defining characteristics of AFM Dina Kudasheva Advisor: Prof. Mary K. Cowman Overview Introduction History of the SPM invention Technical Capabilities Principles of operation Examples

More information

BDS2016 Tutorials: Local Dielectric Spectroscopy by Scanning Probes

BDS2016 Tutorials: Local Dielectric Spectroscopy by Scanning Probes BDS2016 Tutorials: Local Dielectric Spectroscopy by Scanning Probes Massimiliano Labardi CNR Institute for Physico-Chemical Processes (IPCF) Pisa (Italy) OUTLINE Broadband Dielectric Spectroscopy (BDS):

More information

Graphene. Tianyu Ye November 30th, 2011

Graphene. Tianyu Ye November 30th, 2011 Graphene Tianyu Ye November 30th, 2011 Outline What is graphene? How to make graphene? (Exfoliation, Epitaxial, CVD) Is it graphene? (Identification methods) Transport properties; Other properties; Applications;

More information

Electrical characterization of silicon heterojunctions and silicon micro/nanowires for solar cells applications

Electrical characterization of silicon heterojunctions and silicon micro/nanowires for solar cells applications Electrical characterization of silicon heterojunctions and silicon micro/nanowires for solar cells applications J. Alvarez, J. P. Kleider, L. Yu and P. Roca i Cabarrocas Heterojunctions based on to a-si:h/c-si

More information

Lecture 1. OUTLINE Basic Semiconductor Physics. Reading: Chapter 2.1. Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations

Lecture 1. OUTLINE Basic Semiconductor Physics. Reading: Chapter 2.1. Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations Lecture 1 OUTLINE Basic Semiconductor Physics Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations Reading: Chapter 2.1 EE105 Fall 2007 Lecture 1, Slide 1 What is a Semiconductor? Low

More information

SCIENCE & TECHNOLOGY

SCIENCE & TECHNOLOGY Pertanika J. Sci. & Technol. 25 (S): 205-212 (2017) SCIENCE & TECHNOLOGY Journal homepage: http://www.pertanika.upm.edu.my/ Effect of Boron and Oxygen Doping to Graphene Band Structure Siti Fazlina bt

More information

Electronic Supplementary Information. Molecular Antenna Tailored Organic Thin-film Transistor for. Sensing Application

Electronic Supplementary Information. Molecular Antenna Tailored Organic Thin-film Transistor for. Sensing Application Electronic Supplementary Material (ESI) for Materials Horizons. This journal is The Royal Society of Chemistry 2017 Electronic Supplementary Information Molecular Antenna Tailored Organic Thin-film Transistor

More information

Supporting Information

Supporting Information Electronic Supplementary Material (ESI) for Nanoscale. This journal is The Royal Society of Chemistry 2016 Supporting Information Graphene transfer method 1 : Monolayer graphene was pre-deposited on both

More information

Large Storage Window in a-sinx/nc-si/a-sinx Sandwiched Structure

Large Storage Window in a-sinx/nc-si/a-sinx Sandwiched Structure 2017 Asia-Pacific Engineering and Technology Conference (APETC 2017) ISBN: 978-1-60595-443-1 Large Storage Window in a-sinx/nc-si/a-sinx Sandwiched Structure Xiang Wang and Chao Song ABSTRACT The a-sin

More information

Empowering today s nanoscale research with Peak Force Tapping

Empowering today s nanoscale research with Peak Force Tapping Empowering today s nanoscale research with Peak Force Tapping Bede Pittenger, Andrea Slade and Chunzeng Li Bruker NanoSurfaces, Santa Barbara, CA, USA A brief review of AFM imaging technology Mapping topography

More information

High-resolution Characterization of Organic Ultrathin Films Using Atomic Force Microscopy

High-resolution Characterization of Organic Ultrathin Films Using Atomic Force Microscopy High-resolution Characterization of Organic Ultrathin Films Using Atomic Force Microscopy Jing-jiang Yu Nanotechnology Measurements Division Agilent Technologies, Inc. Atomic Force Microscopy High-Resolution

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION Hihly efficient ate-tunable photocurrent eneration in vertical heterostructures of layered materials Woo Jon Yu, Yuan Liu, Hailon Zhou, Anxian Yin, Zhen Li, Yu Huan, and Xianfen Duan. Schematic illustration

More information

CVD-3 LFSIN SiN x Process

CVD-3 LFSIN SiN x Process CVD-3 LFSIN SiN x Process Top Electrode, C Bottom Electrode, C Pump to Base Time (s) SiH 4 Flow Standard LFSIN Process NH 3 Flow N 2 HF (watts) LF (watts) Pressure (mtorr Deposition Time min:s.s Pump to

More information

Supporting Information

Supporting Information Supporting Information Yao et al. 10.1073/pnas.1416368111 Fig. S1. In situ LEEM imaging of graphene growth via chemical vapor deposition (CVD) on Pt(111). The growth of graphene on Pt(111) via a CVD process

More information

Graphene electronics

Graphene electronics Graphene electronics Alberto Morpurgo Main collaborators J. Oostinga, H. Heersche, P. Jarillo Herrero, S. Russo, M. Craciun, L. Vandersypen, S. Tarucha, R. Danneau, P. Hakkonen A simple tight-binding H

More information

Epitaxial Graphene and Graphene Based Devices Studied by Electrical Scanning Probe Microscopy

Epitaxial Graphene and Graphene Based Devices Studied by Electrical Scanning Probe Microscopy Crystals 2013, 3, 191-233; doi:10.3390/cryst3010191 Review OPEN ACCESS crystals ISSN 2073-4352 www.mdpi.com/journal/crystals Epitaxial Graphene and Graphene Based Devices Studied by Electrical Scanning

More information

Ambipolar bistable switching effect of graphene

Ambipolar bistable switching effect of graphene Ambipolar bistable switching effect of graphene Young Jun Shin, 1,2 Jae Hyun Kwon, 1,2 Gopinadhan Kalon, 1,2 Kai-Tak Lam, 1 Charanjit S. Bhatia, 1 Gengchiau Liang, 1 and Hyunsoo Yang 1,2,a) 1 Department

More information

2D MBE Activities in Sheffield. I. Farrer, J. Heffernan Electronic and Electrical Engineering The University of Sheffield

2D MBE Activities in Sheffield. I. Farrer, J. Heffernan Electronic and Electrical Engineering The University of Sheffield 2D MBE Activities in Sheffield I. Farrer, J. Heffernan Electronic and Electrical Engineering The University of Sheffield Outline Motivation Van der Waals crystals The Transition Metal Di-Chalcogenides

More information

Supplementary Figure S1. AFM characterizations and topographical defects of h- BN films on silica substrates. (a) (c) show the AFM height

Supplementary Figure S1. AFM characterizations and topographical defects of h- BN films on silica substrates. (a) (c) show the AFM height Supplementary Figure S1. AFM characterizations and topographical defects of h- BN films on silica substrates. (a) (c) show the AFM height topographies of h-bn film in a size of ~1.5µm 1.5µm, 30µm 30µm

More information

Kavli Workshop for Journalists. June 13th, CNF Cleanroom Activities

Kavli Workshop for Journalists. June 13th, CNF Cleanroom Activities Kavli Workshop for Journalists June 13th, 2007 CNF Cleanroom Activities Seeing nm-sized Objects with an SEM Lab experience: Scanning Electron Microscopy Equipment: Zeiss Supra 55VP Scanning electron microscopes

More information

A semiconductor is an almost insulating material, in which by contamination (doping) positive or negative charge carriers can be introduced.

A semiconductor is an almost insulating material, in which by contamination (doping) positive or negative charge carriers can be introduced. Semiconductor A semiconductor is an almost insulating material, in which by contamination (doping) positive or negative charge carriers can be introduced. Page 2 Semiconductor materials Page 3 Energy levels

More information

Supporting Information Available:

Supporting Information Available: Supporting Information Available: Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS 2 Nanoflakes Nengjie Huo 1, Shengxue Yang 1, Zhongming Wei 2, Shu-Shen Li 1, Jian-Bai Xia

More information

ConceptGraphene. Small or medium-scale focused research project. WP2 Characterization and integration

ConceptGraphene. Small or medium-scale focused research project. WP2 Characterization and integration ConceptGraphene New Electronics Concept: Wafer-Scale Epitaxial Graphene Small or medium-scale focused research project WP2 Characterization and integration Deliverable 2.2 Report on the influence of environment

More information

Quantum Hall effect and Landau level crossing of Dirac fermions in trilayer graphene Supplementary Information

Quantum Hall effect and Landau level crossing of Dirac fermions in trilayer graphene Supplementary Information Quantum Hall effect and Landau level crossing of Dirac fermions in trilayer graphene Supplementary Information Thiti Taychatanapat, Kenji Watanabe, Takashi Taniguchi, Pablo Jarillo-Herrero Department of

More information

Supplementary Information

Supplementary Information Supplementary Information Supplementary Figure S1: Structure and composition of Teflon tape. (a) XRD spectra of original Teflon tape and Teflon tape subjected to annealing at 150 o C under Ar atmosphere.

More information

Scanning Probe Microscopy (SPM)

Scanning Probe Microscopy (SPM) Scanning Probe Microscopy (SPM) Scanning Tunneling Microscopy (STM) --- G. Binnig, H. Rohrer et al, (1982) Near-Field Scanning Optical Microscopy (NSOM) --- D. W. Pohl (1982) Atomic Force Microscopy (AFM)

More information

Review of Semiconductor Fundamentals

Review of Semiconductor Fundamentals ECE 541/ME 541 Microelectronic Fabrication Techniques Review of Semiconductor Fundamentals Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Page 1 Semiconductor A semiconductor is an almost insulating material,

More information

(a) (b) Supplementary Figure 1. (a) (b) (a) Supplementary Figure 2. (a) (b) (c) (d) (e)

(a) (b) Supplementary Figure 1. (a) (b) (a) Supplementary Figure 2. (a) (b) (c) (d) (e) (a) (b) Supplementary Figure 1. (a) An AFM image of the device after the formation of the contact electrodes and the top gate dielectric Al 2 O 3. (b) A line scan performed along the white dashed line

More information

6.5 mm. ε = 1%, r = 9.4 mm. ε = 3%, r = 3.1 mm

6.5 mm. ε = 1%, r = 9.4 mm. ε = 3%, r = 3.1 mm Supplementary Information Supplementary Figures Gold wires Substrate Compression holder 6.5 mm Supplementary Figure 1 Picture of the compression holder. 6.5 mm ε = 0% ε = 1%, r = 9.4 mm ε = 2%, r = 4.7

More information

Supporting Information

Supporting Information Supporting Information Spatially-resolved imaging on photocarrier generations and band alignments at perovskite/pbi2 hetero-interfaces of perovskite solar cells by light-modulated scanning tunneling microscopy

More information