Supporting information. Gate-optimized thermoelectric power factor in ultrathin WSe2 single crystals

Size: px
Start display at page:

Download "Supporting information. Gate-optimized thermoelectric power factor in ultrathin WSe2 single crystals"

Transcription

1 Supporting information Gate-optimized thermoelectric power factor in ultrathin WSe2 single crystals Masaro Yoshida 1, Takahiko Iizuka 1, Yu Saito 1, Masaru Onga 1, Ryuji Suzuki 1, Yijin Zhang 1, Yoshihiro Iwasa 1,2*, & Sunao Shimizu 2 1 Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, the University of Tokyo, Tokyo , Japan. 2 RIKEN Center for Emergent Matter Science (CEMS), Wako , Japan. 1. Optical contrast for ultrathin WSe2 flakes We established a systematic relation between the thickness and the optical contrast for mono-, bi-, and trilayer WSe2 flakes. First we exfoliated a WSe2 single crystal and obtained ultrathin flakes on a doped silicon substrate covered with a 300-nm-thick SiO2 layer. We then put the sample into a chamber and flew Ar/H2 gas at 573 K for 3 hours. After this process, we measured the thickness of each flake by AFM. The thickness obtained by AFM was almost a multiple of the thickness of a monolayer, 0.65 nm. We could obtain the value close to 0.65 nm in some ultrathin flakes, indicating that the dirt between the flakes and substrates was significantly removed by the heat cleaning. We concluded that the thickness measured by AFM was accurate after Ar/H2 heat cleaning. We determined the number of layer for each flake based on the thickness obtained by AFM. After the AFM measurement, we took optical images of the samples and obtained the intensity in the three R, G, B channels. We then calculated the optical contrast (C) determined as C = (Iw/o Iw)/Iw/o, where Iw/o is the intensity measured at a bared substrate and Iw is the intensity obtained at a flake. Among the three R, G, B channels, we focused on the R channel because the optical contrast in the R channel was the most sensitive to the difference of thickness. We show the newly obtained optical contrast table in Fig. S1, where the optical contrast in the R channel systematically changes as a function of the number of layer. The absolute values of the contrast are similar to those in WS2 (ref. 18). 1

2 In Fig. S1, we also show the optical contrast of the ultrathin WSe2 flake used as the channel of the thermoelectric EDLT, whose thickness was measured to be 2 nm by AFM. From this, we concluded that the flake was a trilayer. Figure S1. Optical contrast in the R channel for ultrathin WSe 2 flakes. Red circles represent the optical contrast in the R channel for mono-, bi-, and trilayer WSe 2 flakes. Each point corresponds to the average of the contrast measured on seven monolayers, three bilayers, and two trilayers. The error bars are determined by the standard deviation of the measurements. The blue circle represents the optical contrast of the flake that we used as the channel for the thermoelectric EDLT. 2. Details of the thermoelectric measurement All the measurements were performed under high-vacuum condition. Prior to the thermopower measurement, we first performed the calibration of the on-chip thermometers: We measured the resistances of the thermometer electrodes (Th1 and Th2) at cryostat temperatures between T = 300 K and 303 K in steps of 1 K. The resistance of the thermometer was measured by using an AC resistance bridge (Lake Shore Model 370) with the excitation voltage of 2 mv. At a constant cryostat temperature, we kept measuring the resistance of the thermometer Th2 (R_Th2) for more than 600 seconds, sequentially the resistance of the thermometer Th1 (R_Th1), and increased the temperature by 1 K. After the measurement of R_Th1 and R_Th2 at T = 303 K, we decreased the temperature in steps of 1 K, and re-measured the resistances at each temperature in order to confirm the reproducibility of the measurement. All the results 2

3 are shown in Figs S2a and S2b. Because of the characteristics of the AC resistance bridge, it took approximately 200 seconds to stabilize the values of resistance. In Figs S2c and S2d, we show the stabilized values of R_Th1 and R_Th2 as a function of cryostat temperature (T). The green lines are the line fits to the data. Second, we measured the thermometer resistances with applying various voltages to the heater electrode in order to obtain the relation between the heater voltage (VHeat) and the temperature gradient ( T) across the WSe2 single crystal. We first set the cryostat temperature to 300 K, applied the heater voltage VHeat = 0.5 V, and kept measuring R_Th2 for more than 300 seconds. We sequentially measured R_Th1, and increased VHeat to 1.0 V. We obtained the series of the thermometer resistances at VHeat = 0.0 V, 0.5 V, 1.0 V, 1.5 V, and 2.0 V, which is summarized in Figs S2e and S2f. Based on the linear relation between resistance and temperature shown in Figs S2c and S2d, we calculated the local temperatures at the thermometer electrodes under applying voltage to the heater. In Fig. S2g, we show the increase of temperature at each thermometer ( T_Th1 and T_Th2) as a function of square of voltage applied to the heater (VHeat 2 ). The difference of T_Th1 and T_Th2 corresponds to the temperature gradient ( T) across the ultrathin WSe2 single crystal, whose dependence on VHeat 2 is also shown in Fig. S2g. Because T is proportional to the Joule heat or VHeat 2, the obtained linear relation between T and VHeat 2 is reasonable. After finishing the temperature calibration, we carried out the thermopower measurement, whose schematic procedure is shown in Figs 2b-2e. In the thermopower measurement, we assume that the linear relation between VHeat 2 and T shown in Fig. S2g was maintained though we scanned VHeat relatively quickly. We used a semiconductor parametric analyzer (Agilent Technology E5270B) to apply voltage to the heater electrode, and we employed a nanovoltmeter (Agilent Technology 34420A) to measure the consequent thermoelectric voltage ( V). The trigger signal is sent from E5270B to 34420A just after the application of voltage on the heater electrode. Sequentially, 34420A receives the trigger signal, followed by the measurement of V. 3

4 Figure S2. Temperature calibration. (a, b) Time dependences of resistances of thermometers Th1 (R_Th1) and Th2 (R_Th2) measured at temperature T = 300 K, 301 K, 302 K, and 303K. (c, d) The linear relation between thermometer resistance (R_Th1, R_Th2) and temperature (T). Green lines are the fits to the measured data. (e, f) Time evolution of thermometer resistance (R_Th1, R_Th2) measured under applying different voltages (V Heat) to the heater electrode. (g) The increase of temperature at each thermometer ( T_Th1 and T_Th2) and the consequent temperature gradient ( T) across the single crystal as a function of the square of V Heat. 3. Carrier concentration dependence of Seebeck coefficient in other devices In Fig. S3, we show the electronic and thermoelectric properties of a 10-nm-thick WSe2 flake EDLT. Figures S3a and S3b are the transfer curve and the gate voltage (VG) dependence of Seebeck coefficient (S) at 300 K, respectively. We display in Fig. S3c the carrier concentration (n3d) dependence of S, where we assume that the capacitance is 5.8 F/cm 2 and 7.1 F/cm 2 for electrons and holes, respectively, and that the carriers are accumulated in the top bilayer. Figure S3c shows that S(n3D) is larger in electron side 4

5 than in hole side. This asymmetric feature is qualitatively similar to that observed in the device in the manuscript, which is shown in Fig. 4b. Figure S3 (a) The gate voltage (V G) dependence of source-drain current (I DS) measured at source-drain voltage V DS = 0.01 V. The thickness of the flake was 10 nm. (b) V G dependence of Seebeck coefficient (S). (c) The evolution of the absolute value of Seebeck coefficient S as a function of carrier concentration (n 3D). The red and blue circles represent the data obtained during electron and hole doping, respectively. 4. Possible interpretation of the observed S -n3d relation based on a band calculation The electron-doped WSe2 showed the lower mobility (see Fig. 4a) and the larger thermopower S (see Fig. 4b) at a given carrier concentration than hole-doped WSe2. This hole-electron asymmetric character probably has its origin in the electronic structure. We refer to the first-principle calculations on the field effect transistor of a trilayer WSe2 28. In Figs. S4a and 4b, we show the schematic band diagrams and the predicted Fermi surfaces (FSs) of a trilayer WSe2 under the gate bias. Here, in sharp contrast to monolayers, the predicted FS for the gated trilayer WSe2 is very similar to that for the bulk. Brumme et al. showed that valley is initially filled for the low density hole-doping with the charge concentration of 0.01 e/unit cell, which corresponds to cm -3. Also were shown that for the low density electron-doping, K and Q (between and K) valleys are almost simultaneously occupied. Because only K valleys consist of FSs in lightly-doped monolayers, the calculation suggests that the gated trilayer WSe2 is not regarded as a simple 5

6 doped monolayer. The difference in mobility and S between p- and n-type WSe2 can be interpreted by the predicted number of occupied valleys of the gated WSe2 trilayer. First, the lower mobility in the electron side may be attributed to the intervalley scattering: The hole and electron conductions are dominated by the carriers in the single valley, and by the multi-valleys at K and Q points, respectively. Also the multi-valley nature of the conduction band explains the enhancement of S by electron doping: The larger S in n-type WSe2 indicates the larger density of states (DOS) in the conduction band than in the valence band, and the DOS in the conduction band consisting of K valleys and Q valleys is larger than that in the valence band mainly composed of valley. Figure S4. The schematic band diagrams and the predicted Fermi surfaces of a trilayer WSe 2 under the application of (a) negative and (b) positive gate voltages (ref. 28). 5. Thermoelectric properties in gated 2D materials The thermoelectric performances of various 2D materials are being rapidly explored by field effect doping. In Table S5, we summarized the recent achievements in this field. Material Dielectric Polarity Max S Power factor Ref. Graphene Bi2Se3 MoS2 MoS2 MoS2 WSe2 liquid Ambipolar Ambipolar n-type n-type n-type Ambipolar 100 V/K 170 V/K 30 mv/k 500 V/K 400 V/K 300 V/K Optimized (3 W/K 2 cm) Not optimized Not optimized Not optimized Optimized (37 W/K 2 cm) This letter Table S5. A summary of recent reports on the thermoelectric properties in 2D materials controlled by field effect doping. 6

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION In the format provided by the authors and unedited. DOI: 10.1038/NMAT4996 Exciton Hall effect in monolayer MoS2 Masaru Onga 1, Yijin Zhang 2, 3, Toshiya Ideue 1, Yoshihiro Iwasa 1, 4 * 1 Quantum-Phase

More information

Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS 2 Field Effect Transistors under High Electric Fields

Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS 2 Field Effect Transistors under High Electric Fields Supporting Information Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS 2 Field Effect Transistors under High Electric Fields Jinsu Pak,,# Yeonsik Jang,,# Junghwan Byun, Kyungjune

More information

(a) (b) Supplementary Figure 1. (a) (b) (a) Supplementary Figure 2. (a) (b) (c) (d) (e)

(a) (b) Supplementary Figure 1. (a) (b) (a) Supplementary Figure 2. (a) (b) (c) (d) (e) (a) (b) Supplementary Figure 1. (a) An AFM image of the device after the formation of the contact electrodes and the top gate dielectric Al 2 O 3. (b) A line scan performed along the white dashed line

More information

Graphene photodetectors with ultra-broadband and high responsivity at room temperature

Graphene photodetectors with ultra-broadband and high responsivity at room temperature SUPPLEMENTARY INFORMATION DOI: 10.1038/NNANO.2014.31 Graphene photodetectors with ultra-broadband and high responsivity at room temperature Chang-Hua Liu 1, You-Chia Chang 2, Ted Norris 1.2* and Zhaohui

More information

2D-2D tunneling field effect transistors using

2D-2D tunneling field effect transistors using 2D-2D tunneling field effect transistors using WSe 2 /SnSe 2 heterostructures Tania Roy, 1,2,3 Mahmut Tosun, 1,2,3 Mark Hettick, 1,2,3, Geun Ho Ahn, 1,2,3 Chenming Hu 1, and Ali Javey 1,2,3, 1 Electrical

More information

Fermi Level Pinning at Electrical Metal Contacts. of Monolayer Molybdenum Dichalcogenides

Fermi Level Pinning at Electrical Metal Contacts. of Monolayer Molybdenum Dichalcogenides Supporting information Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides Changsik Kim 1,, Inyong Moon 1,, Daeyeong Lee 1, Min Sup Choi 1, Faisal Ahmed 1,2, Seunggeol

More information

Charge-Induced Second-Harmonic Generation in Bilayer WSe 2

Charge-Induced Second-Harmonic Generation in Bilayer WSe 2 Supplementary Information for Charge-Induced Second-Harmonic Generation in Bilayer WSe Huakang Yu, Deep Talukdar, Weigao Xu, Jacob B. Khurgin,* and Qihua Xiong,3,* Division of Physics and Applied Physics,

More information

Supplementary Figure 1: Micromechanical cleavage of graphene on oxygen plasma treated Si/SiO2. Supplementary Figure 2: Comparison of hbn yield.

Supplementary Figure 1: Micromechanical cleavage of graphene on oxygen plasma treated Si/SiO2. Supplementary Figure 2: Comparison of hbn yield. 1 2 3 4 Supplementary Figure 1: Micromechanical cleavage of graphene on oxygen plasma treated Si/SiO 2. Optical microscopy images of three examples of large single layer graphene flakes cleaved on a single

More information

Chiral electroluminescence from 2D material based transistors

Chiral electroluminescence from 2D material based transistors New Perspectives in Spintronic and Mesoscopic Physics (NPSMP2015) June 10-12, 2015 Kashiwanoha, Japan Chiral electroluminescence from 2D material based transistors Y. Iwasa University of Tokyo & RIKEN

More information

Contact Engineering of Two-Dimensional Layered Semiconductors beyond Graphene

Contact Engineering of Two-Dimensional Layered Semiconductors beyond Graphene Contact Engineering of Two-Dimensional Layered Semiconductors beyond Graphene Zhixian Zhou Department of Physics and Astronomy Wayne State University Detroit, Michigan Outline Introduction Ionic liquid

More information

Electric Field-Dependent Charge-Carrier Velocity in Semiconducting Carbon. Nanotubes. Yung-Fu Chen and M. S. Fuhrer

Electric Field-Dependent Charge-Carrier Velocity in Semiconducting Carbon. Nanotubes. Yung-Fu Chen and M. S. Fuhrer Electric Field-Dependent Charge-Carrier Velocity in Semiconducting Carbon Nanotubes Yung-Fu Chen and M. S. Fuhrer Department of Physics and Center for Superconductivity Research, University of Maryland,

More information

Supplementary Figure 1. Supplementary Figure 1 Characterization of another locally gated PN junction based on boron

Supplementary Figure 1. Supplementary Figure 1 Characterization of another locally gated PN junction based on boron Supplementary Figure 1 Supplementary Figure 1 Characterization of another locally gated PN junction based on boron nitride and few-layer black phosphorus (device S1). (a) Optical micrograph of device S1.

More information

Supporting Information

Supporting Information Electronic Supplementary Material (ESI) for Nanoscale. This journal is The Royal Society of Chemistry 215 Supporting Information Enhanced Photovoltaic Performances of Graphene/Si Solar Cells by Insertion

More information

crystals were phase-pure as determined by x-ray diffraction. Atomically thin MoS 2 flakes were

crystals were phase-pure as determined by x-ray diffraction. Atomically thin MoS 2 flakes were Nano Letters (214) Supplementary Information for High Mobility WSe 2 p- and n-type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts Hsun-Jen Chuang, Xuebin Tan, Nirmal

More information

Supporting information

Supporting information Supporting information Design, Modeling and Fabrication of CVD Grown MoS 2 Circuits with E-Mode FETs for Large-Area Electronics Lili Yu 1*, Dina El-Damak 1*, Ujwal Radhakrishna 1, Xi Ling 1, Ahmad Zubair

More information

ECE 305 Exam 5 SOLUTIONS: Spring 2015 April 17, 2015 Mark Lundstrom Purdue University

ECE 305 Exam 5 SOLUTIONS: Spring 2015 April 17, 2015 Mark Lundstrom Purdue University NAME: PUID: : ECE 305 Exam 5 SOLUTIONS: April 17, 2015 Mark Lundstrom Purdue University This is a closed book exam. You may use a calculator and the formula sheet at the end of this exam. Following the

More information

ECE 340 Lecture 39 : MOS Capacitor II

ECE 340 Lecture 39 : MOS Capacitor II ECE 340 Lecture 39 : MOS Capacitor II Class Outline: Effects of Real Surfaces Threshold Voltage MOS Capacitance-Voltage Analysis Things you should know when you leave Key Questions What are the effects

More information

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006 UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm 2 Name: SID: Closed book. Two sheets of notes are

More information

Supporting Information Available:

Supporting Information Available: Supporting Information Available: Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS 2 Nanoflakes Nengjie Huo 1, Shengxue Yang 1, Zhongming Wei 2, Shu-Shen Li 1, Jian-Bai Xia

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION Supplementary Information: Photocurrent generation in semiconducting and metallic carbon nanotubes Maria Barkelid 1*, Val Zwiller 1 1 Kavli Institute of Nanoscience, Delft University of Technology, Delft,

More information

A flexible and wearable terahertz scanner

A flexible and wearable terahertz scanner A flexible and wearable terahertz scanner Daichi Suzuki 1, Shunri Oda 1, and Yukio Kawano 1* 1 Laboratory for Future Interdisciplinary Research of Science and Technology, Tokyo Institute of Technology,

More information

Supplementary Figure 1. Selected area electron diffraction (SAED) of bilayer graphene and tblg. (a) AB

Supplementary Figure 1. Selected area electron diffraction (SAED) of bilayer graphene and tblg. (a) AB Supplementary Figure 1. Selected area electron diffraction (SAED) of bilayer graphene and tblg. (a) AB stacked bilayer graphene (b), (c), (d), (e), and (f) are twisted bilayer graphene with twist angle

More information

Multicolor Graphene Nanoribbon/Semiconductor Nanowire. Heterojunction Light-Emitting Diodes

Multicolor Graphene Nanoribbon/Semiconductor Nanowire. Heterojunction Light-Emitting Diodes Multicolor Graphene Nanoribbon/Semiconductor Nanowire Heterojunction Light-Emitting Diodes Yu Ye, a Lin Gan, b Lun Dai, *a Hu Meng, a Feng Wei, a Yu Dai, a Zujin Shi, b Bin Yu, a Xuefeng Guo, b and Guogang

More information

Spin-Conserving Resonant Tunneling in Twist- Supporting Information

Spin-Conserving Resonant Tunneling in Twist- Supporting Information Spin-Conserving Resonant Tunneling in Twist- Controlled WSe2-hBN-WSe2 Heterostructures Supporting Information Kyounghwan Kim, 1 Nitin Prasad, 1 Hema C. P. Movva, 1 G. William Burg, 1 Yimeng Wang, 1 Stefano

More information

Extrinsic Origin of Persistent Photoconductivity in

Extrinsic Origin of Persistent Photoconductivity in Supporting Information Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect Transistors Yueh-Chun Wu 1, Cheng-Hua Liu 1,2, Shao-Yu Chen 1, Fu-Yu Shih 1,2, Po-Hsun Ho 3, Chun-Wei

More information

Supplementary Information for Atomically Phase-Matched Second-Harmonic Generation. in a 2D Crystal

Supplementary Information for Atomically Phase-Matched Second-Harmonic Generation. in a 2D Crystal Supplementary Information for Atomically Phase-Matched Second-Harmonic Generation in a 2D Crystal Mervin Zhao 1, 2, Ziliang Ye 1, 2, Ryuji Suzuki 3, 4, Yu Ye 1, 2, Hanyu Zhu 1, Jun Xiao 1, Yuan Wang 1,

More information

Supporting Information

Supporting Information Supporting Information Monolithically Integrated Flexible Black Phosphorus Complementary Inverter Circuits Yuanda Liu, and Kah-Wee Ang* Department of Electrical and Computer Engineering National University

More information

MOS Transistor I-V Characteristics and Parasitics

MOS Transistor I-V Characteristics and Parasitics ECEN454 Digital Integrated Circuit Design MOS Transistor I-V Characteristics and Parasitics ECEN 454 Facts about Transistors So far, we have treated transistors as ideal switches An ON transistor passes

More information

Supplementary Figure 2 Photoluminescence in 1L- (black line) and 7L-MoS 2 (red line) of the Figure 1B with illuminated wavelength of 543 nm.

Supplementary Figure 2 Photoluminescence in 1L- (black line) and 7L-MoS 2 (red line) of the Figure 1B with illuminated wavelength of 543 nm. PL (normalized) Intensity (arb. u.) 1 1 8 7L-MoS 1L-MoS 6 4 37 38 39 4 41 4 Raman shift (cm -1 ) Supplementary Figure 1 Raman spectra of the Figure 1B at the 1L-MoS area (black line) and 7L-MoS area (red

More information

Semiconductor Physics fall 2012 problems

Semiconductor Physics fall 2012 problems Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each

More information

Section 12: Intro to Devices

Section 12: Intro to Devices Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals EE143 Ali Javey Bond Model of Electrons and Holes Si Si Si Si Si Si Si

More information

Magnon-drag thermopile

Magnon-drag thermopile Magnon-drag thermopile I. DEVICE FABRICATION AND CHARACTERIZATION Our devices consist of a large number of pairs of permalloy (NiFe) wires (30 nm wide, 20 nm thick and 5 µm long) connected in a zigzag

More information

Hopping in CVD Grown Single-layer MoS 2

Hopping in CVD Grown Single-layer MoS 2 Supporting Information for Large Thermoelectricity via Variable Range Hopping in CVD Grown Single-layer MoS 2 Jing Wu 1,2,3, Hennrik Schmidt 1,2, Kiran Kumar Amara 4, Xiangfan Xu 5, Goki Eda 1,2,4, and

More information

Fundamentals of the Metal Oxide Semiconductor Field-Effect Transistor

Fundamentals of the Metal Oxide Semiconductor Field-Effect Transistor Triode Working FET Fundamentals of the Metal Oxide Semiconductor Field-Effect Transistor The characteristics of energy bands as a function of applied voltage. Surface inversion. The expression for the

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION SUPPLEMENTARY INFORMATION SUPPLEMENTARY INFORMATION Trilayer graphene is a semimetal with a gate-tuneable band overlap M. F. Craciun, S. Russo, M. Yamamoto, J. B. Oostinga, A. F. Morpurgo and S. Tarucha

More information

A. Optimizing the growth conditions of large-scale graphene films

A. Optimizing the growth conditions of large-scale graphene films 1 A. Optimizing the growth conditions of large-scale graphene films Figure S1. Optical microscope images of graphene films transferred on 300 nm SiO 2 /Si substrates. a, Images of the graphene films grown

More information

TRANSVERSE SPIN TRANSPORT IN GRAPHENE

TRANSVERSE SPIN TRANSPORT IN GRAPHENE International Journal of Modern Physics B Vol. 23, Nos. 12 & 13 (2009) 2641 2646 World Scientific Publishing Company TRANSVERSE SPIN TRANSPORT IN GRAPHENE TARIQ M. G. MOHIUDDIN, A. A. ZHUKOV, D. C. ELIAS,

More information

Electrical Characteristics of MOS Devices

Electrical Characteristics of MOS Devices Electrical Characteristics of MOS Devices The MOS Capacitor Voltage components Accumulation, Depletion, Inversion Modes Effect of channel bias and substrate bias Effect of gate oide charges Threshold-voltage

More information

Supporting Information. by Hexagonal Boron Nitride

Supporting Information. by Hexagonal Boron Nitride Supporting Information High Velocity Saturation in Graphene Encapsulated by Hexagonal Boron Nitride Megan A. Yamoah 1,2,, Wenmin Yang 1,3, Eric Pop 4,5,6, David Goldhaber-Gordon 1 * 1 Department of Physics,

More information

CMPEN 411 VLSI Digital Circuits. Lecture 03: MOS Transistor

CMPEN 411 VLSI Digital Circuits. Lecture 03: MOS Transistor CMPEN 411 VLSI Digital Circuits Lecture 03: MOS Transistor Kyusun Choi [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan, B. Nikolic] CMPEN 411 L03 S.1

More information

MOSFET Physics: The Long Channel Approximation

MOSFET Physics: The Long Channel Approximation MOSFET Physics: The ong Channel Approximation A basic n-channel MOSFET (Figure 1) consists of two heavily-doped n-type regions, the Source and Drain, that comprise the main terminals of the device. The

More information

Section 12: Intro to Devices

Section 12: Intro to Devices Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals Bond Model of Electrons and Holes Si Si Si Si Si Si Si Si Si Silicon

More information

Supporting Online Material for

Supporting Online Material for www.sciencemag.org/cgi/content/full/science.1211384/dc1 Supporting Online Material for Hot Carrier Assisted Intrinsic Photoresponse in Graphene Nathaniel M. Gabor, Justin C. W. Song, Qiong Ma, Nityan L.

More information

Intrinsic Electronic Transport Properties of High. Information

Intrinsic Electronic Transport Properties of High. Information Intrinsic Electronic Transport Properties of High Quality and MoS 2 : Supporting Information Britton W. H. Baugher, Hugh O. H. Churchill, Yafang Yang, and Pablo Jarillo-Herrero Department of Physics, Massachusetts

More information

2D Materials for Gas Sensing

2D Materials for Gas Sensing 2D Materials for Gas Sensing S. Guo, A. Rani, and M.E. Zaghloul Department of Electrical and Computer Engineering The George Washington University, Washington DC 20052 Outline Background Structures of

More information

Supplementary Information

Supplementary Information Supplementary Information Ambient effects on electrical characteristics of CVD-grown monolayer MoS 2 field-effect transistors Jae-Hyuk Ahn, 1,2 William M. Parkin, 1 Carl H. Naylor, 1 A. T. Charlie Johnson,

More information

ECE 342 Electronic Circuits. Lecture 6 MOS Transistors

ECE 342 Electronic Circuits. Lecture 6 MOS Transistors ECE 342 Electronic Circuits Lecture 6 MOS Transistors Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu 1 NMOS Transistor Typically L = 0.1 to 3 m, W = 0.2

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION Hihly efficient ate-tunable photocurrent eneration in vertical heterostructures of layered materials Woo Jon Yu, Yuan Liu, Hailon Zhou, Anxian Yin, Zhen Li, Yu Huan, and Xianfen Duan. Schematic illustration

More information

Semiconductor Physics and Devices

Semiconductor Physics and Devices The pn Junction 1) Charge carriers crossing the junction. 3) Barrier potential Semiconductor Physics and Devices Chapter 8. The pn Junction Diode 2) Formation of positive and negative ions. 4) Formation

More information

Supplementary Figure S1. AFM images of GraNRs grown with standard growth process. Each of these pictures show GraNRs prepared independently,

Supplementary Figure S1. AFM images of GraNRs grown with standard growth process. Each of these pictures show GraNRs prepared independently, Supplementary Figure S1. AFM images of GraNRs grown with standard growth process. Each of these pictures show GraNRs prepared independently, suggesting that the results is reproducible. Supplementary Figure

More information

Lecture 12: MOSFET Devices

Lecture 12: MOSFET Devices Lecture 12: MOSFET Devices Gu-Yeon Wei Division of Engineering and Applied Sciences Harvard University guyeon@eecs.harvard.edu Wei 1 Overview Reading S&S: Chapter 5.1~5.4 Supplemental Reading Background

More information

Supplementary Information for

Supplementary Information for Supplementary Information for Highly Stable, Dual-Gated MoS 2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact Resistance and Threshold Voltage Gwan-Hyoung Lee, Xu Cui,

More information

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

ESE 570: Digital Integrated Circuits and VLSI Fundamentals ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 23, 2018 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2018 Khanna Lecture Outline! CMOS Process Enhancements! Semiconductor

More information

Ferroelectric Field-Effect Transistors Based on MoS 2 and

Ferroelectric Field-Effect Transistors Based on MoS 2 and Supplementary Information for: Ferroelectric Field-Effect Transistors Based on MoS 2 and CuInP 2 S 6 Two-Dimensional Van der Waals Heterostructure Mengwei Si, Pai-Ying Liao, Gang Qiu, Yuqin Duan, and Peide

More information

Lecture 3: CMOS Transistor Theory

Lecture 3: CMOS Transistor Theory Lecture 3: CMOS Transistor Theory Outline Introduction MOS Capacitor nmos I-V Characteristics pmos I-V Characteristics Gate and Diffusion Capacitance 2 Introduction So far, we have treated transistors

More information

Classification of Solids

Classification of Solids Classification of Solids Classification by conductivity, which is related to the band structure: (Filled bands are shown dark; D(E) = Density of states) Class Electron Density Density of States D(E) Examples

More information

ECE-305: Fall 2017 Metal Oxide Semiconductor Devices

ECE-305: Fall 2017 Metal Oxide Semiconductor Devices C-305: Fall 2017 Metal Oxide Semiconductor Devices Pierret, Semiconductor Device Fundamentals (SDF) Chapters 15+16 (pp. 525-530, 563-599) Professor Peter Bermel lectrical and Computer ngineering Purdue

More information

Monolayer Semiconductors

Monolayer Semiconductors Monolayer Semiconductors Gilbert Arias California State University San Bernardino University of Washington INT REU, 2013 Advisor: Xiaodong Xu (Dated: August 24, 2013) Abstract Silicon may be unable to

More information

MOS Capacitor MOSFET Devices. MOSFET s. INEL Solid State Electronics. Manuel Toledo Quiñones. ECE Dept. UPRM.

MOS Capacitor MOSFET Devices. MOSFET s. INEL Solid State Electronics. Manuel Toledo Quiñones. ECE Dept. UPRM. INEL 6055 - Solid State Electronics ECE Dept. UPRM 20th March 2006 Definitions MOS Capacitor Isolated Metal, SiO 2, Si Threshold Voltage qφ m metal d vacuum level SiO qχ 2 E g /2 qφ F E C E i E F E v qφ

More information

Current mechanisms Exam January 27, 2012

Current mechanisms Exam January 27, 2012 Current mechanisms Exam January 27, 2012 There are four mechanisms that typically cause currents to flow: thermionic emission, diffusion, drift, and tunneling. Explain briefly which kind of current mechanisms

More information

MOS Capacitors ECE 2204

MOS Capacitors ECE 2204 MOS apacitors EE 2204 Some lasses of Field Effect Transistors Metal-Oxide-Semiconductor Field Effect Transistor MOSFET, which will be the type that we will study in this course. Metal-Semiconductor Field

More information

Lecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor

Lecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Lecture 15 OUTLINE MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Electrostatics t ti Charge vs. voltage characteristic Reading: Chapter 6.1 6.2.1 EE105 Fall 2007

More information

Supporting Online Material for

Supporting Online Material for www.sciencemag.org/cgi/content/full/327/5966/662/dc Supporting Online Material for 00-GHz Transistors from Wafer-Scale Epitaxial Graphene Y.-M. Lin,* C. Dimitrakopoulos, K. A. Jenkins, D. B. Farmer, H.-Y.

More information

Physics in two dimensions in the lab

Physics in two dimensions in the lab Physics in two dimensions in the lab Nanodevice Physics Lab David Cobden PAB 308 Collaborators at UW Oscar Vilches (Low Temperature Lab) Xiaodong Xu (Nanoscale Optoelectronics Lab) Jiun Haw Chu (Quantum

More information

NiCl2 Solution concentration. Etching Duration. Aspect ratio. Experiment Atmosphere Temperature. Length(µm) Width (nm) Ar:H2=9:1, 150Pa

NiCl2 Solution concentration. Etching Duration. Aspect ratio. Experiment Atmosphere Temperature. Length(µm) Width (nm) Ar:H2=9:1, 150Pa Experiment Atmosphere Temperature #1 # 2 # 3 # 4 # 5 # 6 # 7 # 8 # 9 # 10 Ar:H2=9:1, 150Pa Ar:H2=9:1, 150Pa Ar:H2=9:1, 150Pa Ar:H2=9:1, 150Pa Ar:H2=9:1, 150Pa Ar:H2=9:1, 150Pa Ar:H2=9:1, 150Pa Ar:H2=9:1,

More information

Graphene Canada Montreal Oct. 16, 2015 (International Year of Light)

Graphene Canada Montreal Oct. 16, 2015 (International Year of Light) Luminescence Properties of Graphene A. Beltaos 1,2,3, A. Bergren 1, K. Bosnick 1, N. Pekas 1, A. Matković 4, A. Meldrum 2 1 National Institute for Nanotechnology (NINT), 11421 Saskatchewan Drive, Edmonton,

More information

Electrical Transport Measurements Show Intrinsic Doping and Hysteresis in Graphene p-n Junction Devices

Electrical Transport Measurements Show Intrinsic Doping and Hysteresis in Graphene p-n Junction Devices Electrical Transport Measurements Show Intrinsic Doping and Hysteresis in Graphene p-n Junction Devices Garrett Plunkett Department of Physics Oregon State University June 6, 017 Advisor: Dr. Matthew Graham

More information

MOS Transistor Properties Review

MOS Transistor Properties Review MOS Transistor Properties Review 1 VLSI Chip Manufacturing Process Photolithography: transfer of mask patterns to the chip Diffusion or ion implantation: selective doping of Si substrate Oxidation: SiO

More information

A Novel Approach to the Layer Number-Controlled and Grain Size- Controlled Growth of High Quality Graphene for Nanoelectronics

A Novel Approach to the Layer Number-Controlled and Grain Size- Controlled Growth of High Quality Graphene for Nanoelectronics Supporting Information A Novel Approach to the Layer Number-Controlled and Grain Size- Controlled Growth of High Quality Graphene for Nanoelectronics Tej B. Limbu 1,2, Jean C. Hernández 3, Frank Mendoza

More information

Electronic transport in low dimensional systems

Electronic transport in low dimensional systems Electronic transport in low dimensional systems For example: 2D system l

More information

Ambipolar Insulator-to-metal Transition in Black Phosphorus by Ionic-liquid Gating

Ambipolar Insulator-to-metal Transition in Black Phosphorus by Ionic-liquid Gating Ambipolar Insulator-to-metal Transition in Black Phosphorus by Ionic-liquid Gating Yu Saito 1 * and Yoshihiro Iwasa 1, 2 1 Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The

More information

Lecture 04 Review of MOSFET

Lecture 04 Review of MOSFET ECE 541/ME 541 Microelectronic Fabrication Techniques Lecture 04 Review of MOSFET Zheng Yang (ERF 3017, email: yangzhen@uic.edu) What is a Transistor? A Switch! An MOS Transistor V GS V T V GS S Ron D

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION doi:10.1038/nature13734 1. Gate dependence of the negatively charged trion in WS 2 monolayer. We test the trion with both transport and optical measurements. The trion in our system is negatively charged,

More information

Supporting Information. Direct n- to p-type Channel Conversion in Monolayer/Few-Layer WS 2 Field-Effect Transistors by Atomic Nitrogen Treatment

Supporting Information. Direct n- to p-type Channel Conversion in Monolayer/Few-Layer WS 2 Field-Effect Transistors by Atomic Nitrogen Treatment Supporting Information Direct n- to p-type Channel Conversion in Monolayer/Few-Layer WS 2 Field-Effect Transistors by Atomic Nitrogen Treatment Baoshan Tang 1,2,, Zhi Gen Yu 3,, Li Huang 4, Jianwei Chai

More information

FIELD-EFFECT TRANSISTORS

FIELD-EFFECT TRANSISTORS FIEL-EFFECT TRANSISTORS 1 Semiconductor review 2 The MOS capacitor 2 The enhancement-type N-MOS transistor 3 I-V characteristics of enhancement MOSFETS 4 The output characteristic of the MOSFET in saturation

More information

MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University

MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University Practice Final Exam 1 Read the questions carefully Label all figures

More information

Lecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor

Lecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Lecture 15 OUTLINE MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Electrostatics Charge vs. voltage characteristic Reading: Chapter 6.1 6.2.1 EE15 Spring 28 Lecture

More information

Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors

Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors David Jiménez Departament d'enginyeria Electrònica, Escola d'enginyeria, Universitat Autònoma de Barcelona,

More information

SECTION: Circle one: Alam Lundstrom. ECE 305 Exam 5 SOLUTIONS: Spring 2016 April 18, 2016 M. A. Alam and M.S. Lundstrom Purdue University

SECTION: Circle one: Alam Lundstrom. ECE 305 Exam 5 SOLUTIONS: Spring 2016 April 18, 2016 M. A. Alam and M.S. Lundstrom Purdue University NAME: PUID: SECTION: Circle one: Alam Lundstrom ECE 305 Exam 5 SOLUTIONS: April 18, 2016 M A Alam and MS Lundstrom Purdue University This is a closed book exam You may use a calculator and the formula

More information

Supporting Information for: Sustained sub-60 mv/decade switching via the negative capacitance effect in MoS 2 transistors

Supporting Information for: Sustained sub-60 mv/decade switching via the negative capacitance effect in MoS 2 transistors Supporting Information for: Sustained sub-60 mv/decade switching via the negative capacitance effect in MoS 2 transistors Felicia A. McGuire 1, Yuh-Chen Lin 1, Katherine Price 1, G. Bruce Rayner 2, Sourabh

More information

1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00

1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00 1 Name: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND Final Exam Physics 3000 December 11, 2012 Fall 2012 9:00-11:00 INSTRUCTIONS: 1. Answer all seven (7) questions.

More information

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes

Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and cross-sectional area 100µm 2

More information

Semiconductor Physics Problems 2015

Semiconductor Physics Problems 2015 Semiconductor Physics Problems 2015 Page and figure numbers refer to Semiconductor Devices Physics and Technology, 3rd edition, by SM Sze and M-K Lee 1. The purest semiconductor crystals it is possible

More information

Supporting information

Supporting information Supporting information Influence of electrolyte composition on liquid-gated carbon-nanotube and graphene transistors By: Iddo Heller, Sohail Chatoor, Jaan Männik, Marcel A. G. Zevenbergen, Cees Dekker,

More information

Electrical Characteristics of Multilayer MoS 2 FET s

Electrical Characteristics of Multilayer MoS 2 FET s Electrical Characteristics of Multilayer MoS 2 FET s with MoS 2 /Graphene Hetero-Junction Contacts Joon Young Kwak,* Jeonghyun Hwang, Brian Calderon, Hussain Alsalman, Nini Munoz, Brian Schutter, and Michael

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION DOI: 1.138/NNANO.215.33 Epitaxial graphene quantum dots for high-performance terahertz bolometers Abdel El Fatimy *, Rachael L. Myers-Ward, Anthony K. Boyd, Kevin M. Daniels, D. Kurt Gaskill, and Paola

More information

The Critical Role of Quantum Capacitance in Compact Modeling of Nano-Scaled and Nanoelectronic Devices

The Critical Role of Quantum Capacitance in Compact Modeling of Nano-Scaled and Nanoelectronic Devices The Critical Role of Quantum Capacitance in Compact Modeling of Nano-Scaled and Nanoelectronic Devices Zhiping Yu and Jinyu Zhang Institute of Microelectronics Tsinghua University, Beijing, China yuzhip@tsinghua.edu.cn

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION Lateral heterojunctions within monolayer MoSe 2 -WSe 2 semiconductors Chunming Huang 1,#,*, Sanfeng Wu 1,#,*, Ana M. Sanchez 2,#,*, Jonathan J. P. Peters 2, Richard Beanland 2, Jason S. Ross 3, Pasqual

More information

Edge conduction in monolayer WTe 2

Edge conduction in monolayer WTe 2 In the format provided by the authors and unedited. DOI: 1.138/NPHYS491 Edge conduction in monolayer WTe 2 Contents SI-1. Characterizations of monolayer WTe2 devices SI-2. Magnetoresistance and temperature

More information

Supplementary Information Supplementary Figures

Supplementary Information Supplementary Figures Supplementary Information Supplementary Figures Supplementary Fig S1: Multilayer MoS 2 FETs on SiO2/Si substrates, and contact resistance effects. (Left): Transfer curves and effective mobility of multilayer

More information

Vertical charge transfer and lateral transport in. graphene/germanium heterostructures

Vertical charge transfer and lateral transport in. graphene/germanium heterostructures Supporting Information Vertical charge transfer and lateral transport in graphene/germanium heterostructures Alireza Kazemi 1, 4, Sam Vaziri 2, Jorge Daniel Aguirre Morales 3, Sébastien Frégonèse 3, Francesca

More information

! CMOS Process Enhancements. ! Semiconductor Physics. " Band gaps. " Field Effects. ! MOS Physics. " Cut-off. " Depletion.

! CMOS Process Enhancements. ! Semiconductor Physics.  Band gaps.  Field Effects. ! MOS Physics.  Cut-off.  Depletion. ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 3, 018 MOS Transistor Theory, MOS Model Lecture Outline! CMOS Process Enhancements! Semiconductor Physics " Band gaps " Field Effects!

More information

Device and Monte Carlo Simulation of GaN material and devices. Presenter: Ziyang Xiao Advisor: Prof. Neil Goldsman University of Maryland

Device and Monte Carlo Simulation of GaN material and devices. Presenter: Ziyang Xiao Advisor: Prof. Neil Goldsman University of Maryland Device and Monte Carlo Simulation of GaN material and devices Presenter: Ziyang Xiao Advisor: Prof. Neil Goldsman University of Maryland 2/23 OUTLINE - GaN Introduction and Background Device Simulation

More information

Surfaces, Interfaces, and Layered Devices

Surfaces, Interfaces, and Layered Devices Surfaces, Interfaces, and Layered Devices Building blocks for nanodevices! W. Pauli: God made solids, but surfaces were the work of Devil. Surfaces and Interfaces 1 Interface between a crystal and vacuum

More information

Graphene electronics

Graphene electronics Graphene electronics Alberto Morpurgo Main collaborators J. Oostinga, H. Heersche, P. Jarillo Herrero, S. Russo, M. Craciun, L. Vandersypen, S. Tarucha, R. Danneau, P. Hakkonen A simple tight-binding H

More information

Spring Semester 2012 Final Exam

Spring Semester 2012 Final Exam Spring Semester 2012 Final Exam Note: Show your work, underline results, and always show units. Official exam time: 2.0 hours; an extension of at least 1.0 hour will be granted to anyone. Materials parameters

More information

How a single defect can affect silicon nano-devices. Ted Thorbeck

How a single defect can affect silicon nano-devices. Ted Thorbeck How a single defect can affect silicon nano-devices Ted Thorbeck tedt@nist.gov The Big Idea As MOS-FETs continue to shrink, single atomic scale defects are beginning to affect device performance Gate Source

More information

Trajectory of the anomalous Hall effect towards the quantized state in a ferromagnetic topological insulator

Trajectory of the anomalous Hall effect towards the quantized state in a ferromagnetic topological insulator Trajectory of the anomalous Hall effect towards the quantized state in a ferromagnetic topological insulator J. G. Checkelsky, 1, R. Yoshimi, 1 A. Tsukazaki, 2 K. S. Takahashi, 3 Y. Kozuka, 1 J. Falson,

More information

DEFECTS IN 2D MATERIALS: HOW WE TAUGHT ELECTRONIC SCREENING TO MACHINES

DEFECTS IN 2D MATERIALS: HOW WE TAUGHT ELECTRONIC SCREENING TO MACHINES DEFECTS IN 2D MATERIALS: HOW WE TAUGHT ELECTRONIC SCREENING TO MACHINES Johannes Lischner Imperial College London LISCHNER GROUP AT IMPERIAL COLLEGE LONDON Theory and simulation of materials: focus on

More information

Highly Confined Tunable Mid-Infrared Plasmonics in Graphene Nanoresonators

Highly Confined Tunable Mid-Infrared Plasmonics in Graphene Nanoresonators Supplementary Information for Highly Confined Tunable Mid-Infrared Plasmonics in Graphene Nanoresonators by Victor W. Brar, Min Seok Jang, Michelle Sherrott, Josue J. Lopez and Harry Atwater 1 Approximating

More information