AKIN AKTURK Carlsbad Drive Gaithersburg, MD 20879, USA

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1 AKIN AKTURK 1335 Carlsbad Drive Gaithersburg, MD 20879, USA Tel: EDUCATION Ph. D., Electrical & Computer Engineering, University of Maryland, College Park, MD, USA 2006 Dissertation: Thermal and Performance Modeling of Nanoscale MOSFETs, Carbon Nanotube Devices and Integrated Circuits M.S., Electrical & Computer Engineering, University of Maryland, College Park, MD, USA 2001 Thesis Title: Investigation of Transient and DC Characteristics of CMOS Inverters B.S., Electrical & Electronics Engineering, Bilkent University, Ankara, Turkey 1999 RESEARCH and TEACHING EXPERIENCE Ph. D. Research Associate, Electrical & Computer Engineering, University of Maryland, Conducting nanotechnology research on modeling, simulation and investigation of integrated circuits and nanoscale electronics, including carbon nanotube devices, sub-micron MOSFETs and silicon-on-insulator MOSFETs. - Investigating operation of devices and integrated circuits at cryogenic, room and high temperatures. - Taught graduate class ENEE611 Integrated Circuit Design and Analysis, as a substitute instructor. Graduate Research Assistant, Electrical & Computer Engineering, University of Maryland, Designed, tested and laid out chips using Cadence Virtuoso, and have them fabricated through fabrication clearing house MOSIS. These chips were used to investigate device and chip thermal performances at colder and hotter temperatures. - Investigated operation of novel devices, and operation of electronics at cryogenic temperatures. - Researched and developed simulators for electron transport in carbon nanotubes. - Designed analog, digital and mixed-signal circuits, including phase locked loops (PLLs), lownoise amplifiers (LNAs), voltage controlled oscillators (VCOs) and frequency-modulation (FM) radio. Graduate Teaching Assistant, Electrical & Computer Engineering, University of Maryland, Assisted and guided students in sophomore class ENEE206 Fundamental Electric and Digital Circuit Laboratory.

2 - Graded student reports for the ENEE Taught, and guided students in, junior class ENEE312 Semiconductor Devices and Analog Electronics, as a substitute. Researcher and Student, Electrical & Electronics Engineering, Bilkent University, Ankara, Turkey, Designed and implemented, in a group, a functional electrocardiogram. - Hired to help model and simulate a ground penetrating radar for military electronics. - Designed various analog and digital circuits, and RF antennas. Internships - Kardiosis Cardiological Diagnostic Systems Ltd. Co., Ankara, Turkey - Worked on biomedical devices. - Gate Elektronik, Ankara / Turkey -Worked on circuit diagnostics PUBLICATIONS IN PROFESSIONAL SCIENCE AND ENGINEERING JOURNALS [1] A. Akturk, N. Goldsman, G. Pennington, A. Wickenden, Terahertz current oscillations in singlewalled zig-zag carbon nanotubes, accepted for publication in Physical Review Letters. [2] A. Akturk, N. Goldsman, G. Pennington, A. Wickenden, Electron transport and velocity oscillations in a carbon nanotube, accepted for publication in IEEE Transactions on Nanotechnology. [3] G. Pennington, N. Goldsman, A. Akturk, A. Wickenden, Deformation potential carrier-phonon scattering in semiconducting carbon nanotube transistors, Applied Physics Letters 90(2), (2007). Virtual Journal of Nanoscale Science and Technology 15(7) (2007). [4] A. Akturk, N. Goldsman, G. Metze, Self-consistent modeling of heating and MOSFET performance in three-dimensional integrated circuits, IEEE Transactions on Electron Devices 52(11), (2005). [5] A. Akturk, N. Goldsman, L. Parker, G. Metze, Mixed-mode temperature modeling of full-chip based on individual non-isothermal device operations, Solid-State Electronics 49(7), (2005). [6] A. Akturk, G. Pennington, N. Goldsman, Quantum modeling and proposed designs of carbon nanotube (CNT) embedded nanoscale MOSFETs, IEEE Transactions on Electron Devices 52(4), (2005). [7] A. Akturk, N. Goldsman, G. Metze, Increased CMOS inverter switching speed with asymmetrical doping, Solid-State Electronics 47(2), (2003).

3 [8] A. Akturk, N. Goldsman, G. Pennington, Self-consistent ensemble Monte Carlo simulations show terahertz oscillations in single-walled carbon nanotubes, submitted to Journal of Applied Physics (2007). [9] A. Varma, Y. Afridi, A. Akturk, P. Klein, A. Hefner, B. Jacob, Modeling heterogeneous SoCs with SystemC: a digital/mems case study, submitted to ACM Transactions on Embedded Computing Systems (2007). [10] A. Akturk, J. Allnutt, Z. Dilli, N. Goldsman, M. Peckerar, Device modeling at cryogenic temperatures: effects of incomplete ionization, submitted to IEEE Transactions on Electron Devices (2007). [11] A. Akturk, N. Goldsman, Single-walled zig-zag carbon nanotube steady-state transport characteristics, submitted to ASP Journal of Computational and Theoretical Nanoscience (2007). [12] Z. Dilli, N. Goldsman, M. Peckerar, A. Akturk, G. Metze, Design and testing of a self-powered 3-D integrated SOI CMOS system, submitted to Microelectronic Engineering (2007). PUBLICATIONS IN PROFESSIONAL SCIENCE AND ENGINEERING CONFERENCE PROCEEDINGS [1] A. Wickenden, B. Nichols, M. Ervin, S. Kilpatrick, A. Akturk, G. Pennington, N. Goldsman, G. Esen, A. Manasson, M. Fuhrer, Carbon nanotube devices for sensing and communications applications, Proc. of 211 th Electrochemical Society (ECS) Meeting H4, 1052 (2007) (Invited). [2] G. Pennington, N. Goldsman, A. Akturk, A. Wickenden, Multisubband Boltzmann carrier transport in carbon nanotube transistors, Proc. of American Physical Society (APS) March Meeting, K (2007). [3] N. Goldsman, A. Akturk, Analysis and design of key phenomena in electronics: nanostructures and devices, Proc. of Int. Society for Optical Eng. (SPIE) Conf., I (2006) (Invited). [4] A. Varma, Y. Afridi, A. Akturk, P. Klein, A. Hefner, B. Jacob, Modeling MEMs microhotplate structures with SystemC, Proc. of Int. Conf. on Compilers, Architecture, and Synthesis for Embedded Systems (CASES), (2006). [5] A. Akturk, G. Pennington, N. Goldsman, A. Wickenden, Quantum electron transport in carbon nanotubes: length dependence and velocity oscillations, Proc. of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), (2006). [6] A. Akturk, N. Goldsman, Z. Dilli, M. Peckerar, Device performance and package induced selfheating effects at cryogenic temperatures, Proc. of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), (2006). [7] Z. Dilli, N. Goldsman, A. Akturk, G. Metze, A 3-d time-dependent Greens function approach to modeling electromagnetic noise in on-chip interconnect networks, Proc. of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), (2006).

4 [8] A. Akturk, N. Goldsman, G. Metze, An efficient inclusion of self-heating and quantum effects in SOI device simulations, Proc. of Int. Semiconductor Device Research Symposium (ISDRS), (2005). [9] A. Akturk, N. Goldsman, N. Dhar, P. S. Wijewarnasuriya, Modeling the temperature dependence and optical response of HgCdTe diodes, Proc. of Int. Semiconductor Device Research Symposium (ISDRS), (2005). [10] G. Pennington, A. Akturk, J. M. McGarrity, N. Goldsman, Transport properties of wide bandgap nanotubes, Proc. of Int. Semiconductor Device Research Symposium (ISDRS), (2005). [11] Z. Dilli, N. Goldsman, A. Akturk, An impulse-response based methodology for modeling complex interconnect networks, Proc. of Int. Semiconductor Device Research Symposium (ISDRS), (2005). [12] A. Akturk, G. Pennington, N. Goldsman, Numerical device analysis of all-around gate carbon nanotube (CNT) embedded field-effect transistors (FETs), 16 th Euro. Conf. on Diamond, Diamond-Like Mat., Carbon Nanotubes and Nitrides, [5.6.11] (2005). [13] G. Pennington, A. Akturk, N. Goldsman, Low-field electronic transport in single-walled semiconducting carbon nanotubes, 16 th Euro. Conf. on Diamond, Diamond-Like Mat., Carbon Nanotubes and Nitrides, [15.5.2] (2005). [14] A. Akturk, N. Goldsman, G. Metze, Coupled simulation of device performance and heating of vertically stacked three-dimensional integrated circuits, Proc. of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), (2005). [15] A. Akturk, G. Pennington, N. Goldsman, Device behavior modeling for carbon nanotube silicon-on-insulator MOSFETs, Proc. of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), (2005). [16] G. Pennington, A. Akturk, N. Goldsman, Low-field transport model for semiconducting carbon nanotubes, Proc. of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), (2005). [17] G. Pennington, A. Akturk, N. Goldsman, Phonon-limited transport in carbon nanotubes using the Monte Carlo method, Proc. of Int. Workshop on Computational Electronics (IWCE), (2004). [18] A. Akturk, G. Pennington, N. Goldsman, Numerical performance analysis of carbon nanotube (CNT) embedded MOSFETs, Proc. of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), (2004).

5 [19] A. Akturk, G. Pennington, N. Goldsman, Temperature dependent mobility model for singlewalled zig-zag carbon nanotubes (CNTs), Proc. of 8 th Int. Conf. on Nanometer-Scale Science and Tech. (NANO-8), [1846] (2004). [20] A. Akturk, G. Pennington, N. Goldsman, Characterisation of nanoscale carbon nanotube (CNT) embedded CMOS inverters, Proc. of 8 th Int. Conf. on Nanometer-Scale Science and Tech. (NANO-8), [413] (2004). [21] A. Akturk, L. Parker, N. Goldsman, G. Metze, Mixed-mode simulation of non-isothermal quantum device operation and full-chip heating, Proc. of Int. Semiconductor Device Research Symposium (ISDRS), (2003). [22] G. Pennington, A. Akturk, N. Goldsman, Electron mobility of a semiconducting carbon nanotube, Proc. of Int. Semiconductor Device Research Symposium (ISDRS), (2003). [23] A. Akturk, N. Goldsman, G. Metze, Coupled modeling of time-dependent full-chip heating and quantum non-isothermal device operation, Proc. of Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), (2003). [24] A. Akturk, G. Pennington, N. Goldsman, Modeling the enhancement of nanoscale MOSFETs by embedding carbon nanotubes in the channel, Proc. of 3 rd IEEE Conf. on Nanotechnology (IEEE-NANO) 1, (2003). [25] A. Akturk, N. Goldsman, G. Metze, Faster CMOS inverter switching obtained with channel engineered asymmetrical halo implanted MOSFETs, Proc. of Int. Semiconductor Device Research Symposium (ISDRS), (2001). INVITED TALKS [1] A. Wickenden, B. Nichols, M. Ervin, S. Kilpatrick, A. Akturk, G. Pennington, N. Goldsman, G. Esen, A. Manasson, M. Fuhrer, Carbon nanotube devices for sensing and communications applications, Proc. of 211 th Electrochemical Society (ECS) Meeting H4, 1052 (2007). [2] N. Goldsman, A. Akturk, Analysis and design of key phenomena in electronics: nanostructures and devices, Proc. of Int. Society for Optical Eng. (SPIE) Conf., I (2006). HONORS & AWARDS - Full teaching and research assistantships (tuition and stipend) during the M.S. and the Ph. D., Electrical & Computer Engineering, University of Maryland, College Park Graduated 6 th of the undergraduate class at Bilkent University, Ankara, Turkey Merit-based scholarship, Netas-Northern Electric Telecommunication Co., Istanbul, Turkey. 1998

6 - Fellowship (tuition and stipend) during the B.S., Electrical & Electronics Engineering, Bilkent University, Ankara, Turkey Ranked 30 th among approximately a million in the national university entrance exams of Turkey CHIPS DESIGNED TO BE FABRICATED BY MOSIS T47FCD, T47FCA, T47FBH, T3CUCF, T3AJCD, T3AJBV PATENTS United States Patent Application: Inventors: Michael Khbeis, George Metze, Neil Goldsman, Akin Akturk Use of thermally conductive vias to extract heat from microelectronic chips and method of manufacturing Abstract: A cooling device for a microcircuit provides a direct path of thermal extraction from a high heat producing area to a cooler area. A thermal insulation layer is formed on a body having at least one component thereon that generates the high heat producing area. At least one via is formed through an entire thickness of the insulation layer and is in direct communication with the high heat producing area. Heat from the high heat producing area is channeled through each via to the cooler area, which may be ambient atmosphere or a good thermal conductor, such as a heat sink. A thermal conductive material may be deposited within the via and increase the rate of thermal extraction. ACTIVITIES - Member of the Institute of Electrical and Electronics Engineers (IEEE). - Reviewer for o Microelectronic Engineering Journal o IEEE Transactions on Electron Devices o Journal of Vacuum Science and Technology o International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) o International Semiconductor Device Research Symposium (ISDRS) - Active member and treasurer of the Washington DC Turkish Folk Dance Troupe. SOFTWARE C, Matlab, Pspice, Cadence, Magic, Unix, Windows