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1 IBM ES9 Bipolar Fujitsu VP IBM 39S Pulsar 4 IBM 39 IBM RY6 CDC Cyber 5 IBM 4381 IBM RY4 IBM 381 Apache Fujitsu M38 IBM 37 Merced IBM 36 IBM 333 Vacuum Pentium II(DSIP) NTT Fujitsu M-78 Year of announcement IBM RY5 CMOS Jayhawk(dual) IBM RY7 Prescott T-Rex Mckinley Squadrons IBM GP IBM Z9 Pentium Radio Receive for Mesh Maintenance - 6 ma Typical Current Draw 1 sec Heartbeat 3 beats per sample Sampling and Radio Transmission 9-15 ma Low Power Sleep ma Heartbeat 1 - ma Time (seconds) Digital Integrated Circuits EECS 31 Policy on confusing points Teacher: Robert Dick Office: 417-E EECS dickrp@umich.edu Phone: Cellphone: HW engineers SW engineers GSI: Shengshou Lu Office: 75 BBB luss@umich.edu If it doesn t make sense, I will either 1 cover it in more detail right away, indicate when it will be covered in detail, or 3 invite you to office hours. Power density (Watts/cm ) Current (ma) 3 Robert Dick Digital Integrated Circuits Why and when does an NMOS-based consume more power than a CMOS inverter? What is leakage power consumption? What is dynamic power consumption? If R is big, low high output transition is slow. If R is slow, constant power consumption whenever input is high. Subthreshold leakage: not a perfect switch at V t. Gate leakage. Dynamic power. 4 Robert Dick Digital Integrated Circuits 5 Robert Dick Digital Integrated Circuits What is the difference between a source and drain? Why diodes? Source is the side the charge carriers for the MOSFET come from. Drain is the side to which the charge carriers go. Key question: Which terminal has a higher voltage and which terminal has a lower voltage? In the process of building MOSFETs, we accidentally make diodes. Must understand their properties. What we learn about device physics here will help us understand MOSFETs in later lectures. 6 Robert Dick Digital Integrated Circuits 8 Robert Dick Digital Integrated Circuits

2 Diode physical structure 9 Robert Dick Digital Integrated Circuits Robert Dick Digital Integrated Circuits Material properties Conduction Valence Eg Insulator Heat Eg Semiconductor or Metal Electron mobility µ n is a bit over twice that of hole µ p. Units are cm Vs. 1 Robert Dick Digital Integrated Circuits Example dopants What are the electrons and holes we have been discussing? We mean only electrons in the conduction band, not the valence band. We mean only holes in the valence band, not the conduction band. The conduction band is mostly empty for a semiconductor. The valence band is mostly full for a semiconductor. Example donor: As. Example acceptor: B. 13 Robert Dick Digital Integrated Circuits 14 Robert Dick Digital Integrated Circuits

3 Diffusion equation r: location t: time φ( r, t): density φ( r,t) t D( r, t): diffusion coefficient : vector differential operator If D is constant, = (D(φ, r) φ( r,t)) φ( r,t) t = D φ( r,t) 16 Robert Dick Digital Integrated Circuits Diffusion example V Time Position 5 Note: Python is awesome. Junction depletion Drift velocity The drift velocity v d = µξ, where µ is the mobility and ξ is the electric field. Net velocity must be small compared to particle random motion velocity for this to hold more on this soon. 19 Robert Dick Digital Integrated Circuits Robert Dick Digital Integrated Circuits

4 Built-in potential [ ] NA N D Φ = Φ T ln Φ T = kt q n i : intrinsic charge carrier concentration. N x : acceptor and donor concentrations. k: Boltzmann constant T: temperature q: elementary charge Robert Dick Digital Integrated Circuits n i (1) () Diode operation 4 Robert Dick Digital Integrated Circuits Diode current I D : diode current V D : diode voltage ) V D φ I D = I S (e T 1 I S : saturation current constant φ T = kt q : thermal voltage k: Boltzmann constant T: temperature q: elementary charge 5 Robert Dick Digital Integrated Circuits

5 Avalanche breakdown Diode capacitance C J C J = (1 V D /Φ ) m m =.5 for abrupt junctions, m =.33 for linear junctions 7 Robert Dick Digital Integrated Circuits 8 Robert Dick Digital Integrated Circuits Diffusion capacitance Summary of basic device physics and diodes A D : area of diode C J = A D ǫ Si : permittivity of silicon N X : carrier density ǫ Si q φ = φ T ln N AN D n i φ T = kt q n i : intrinsic carrier concentration N A N D 1 N A +N D φ What are the electrons, holes, dopants, and acceptors we have been talking about? What are diffusion and drift? What is built-in potential? Avalanche breakdown? Intrinsic carriers? 9 Robert Dick Digital Integrated Circuits 3 Robert Dick Digital Integrated Circuits Upcoming topics assignment and announcement Transistor static behavior. Fabrication. Transistor dynamic behavior. Interconnect. 1 September: Section 3.3. in J. Rabaey, A. Chandrakasan, and B. Nikolic. Digital Integrated Circuits: A Design Perspective. Prentice-Hall, second edition, September: Laboratory assignment one. 31 Robert Dick Digital Integrated Circuits 33 Robert Dick Digital Integrated Circuits

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