Ph D in Physics from the University of Toulouse (UPS) and Post Graduate Diploma in research (HDR) from University of Grenoble (France).

Transcription

1 Aziz ZENASNI Ph D in Physics from the University of Toulouse (UPS) and Post Graduate Diploma in research (HDR) from University of Grenoble (France). Currently a Research Staff Member of CEA-LETI, he has headed the development of ultra low k materials for advanced interconnect to be implemented in 65 and 45 nm nodes technology at STMicroelectronics; since 2008, he is head of graphene activity at CEA-LETI and is coordinating the project.

2 FP7-NMP- Aziz ZENASNI, CEA-LETI Coordinator of project 1

3 GRaphenE for NAnoscaleD Applications University of Cologne VARTA Funding call: FP7-NMP-2009-SMALL-3 Duration: Jan 2011-Dec 2013 (36 months) Consortium : 7 partners (in 5 countries) Lancaster University Polytechnic university of Valencia (UPVLC) CRF CEA CNRS (InstitutLouis Néel, Laboratoire Génie Chimique) 2

4 Main benefits should come from the use of grapheneas a potential integrated layer that can interact with its environment Bolotin, K.I. et al. Solid State Communications 146, (2008). Mobility increase from 28,000 cm 2 /Vs to 230,000 cm 2 /Vs with heating Best mobility achieved for suspended graphene(10 7 cm 2 /Vs reported for 3x10-9 cm -2 charge doping P. Neugebaeur. et al. PRL 103, (2009) The main limitation is associated with the severe mobility degradation resulting from the graphene dielectric integration process, which introduces substantial defects into pristine graphene lattices 3

5 For graphenegrowth, there are still a plenty of things to do (depending what we are really needing) Growth is still too slow The precise control of the graphene layer thickness down to single layer turned out tedious The coverage has to be optimized Intrinsic limitations to the quality of graphene are also imposed by substrate roughening at the high temperature of CVD Polycrystalline metal films impose twinned domains in graphene, with length scale in the range of the metal grain size (typically a few 10 μm). Polymer transfer is still contaminant Development of supercapwith high energy density 136 Wh/kg at 80 with only 580 m 2 /g CVD can be a competitor for high surface/volume Workshop graphene, ratio synthesis Brussels, 21th march 2011 Charge carrier s mobility, so far limited to a few 10 3 cm 2 V 1 s 1 for CVD grown graphene 4

6 has been thought in a common effort to a better use of graphene applications domain High ratio Surface/volume Band gap Transparency High mobility Chemical synthesis Vapor based deposition Main target: Study and tailor the intrinsic properties of graphene (by defect engineering) to adjust and optimize the final properties within a real-life environment Defect (Intrinsic & generated ) Adsorbates, ripples, substrate, crystalline defect, grain boundaries, Graphene properties in device environment Adsorbates, substrate, interface, ripples, 5

7 There is no need to run before you can walk Property System graphene/graphite suspended graphene Mobility/ doping graphene/cu transferred graphene/ni transferred graphene/textured Ni graphene/ru Domain size graphene/ir exfoliated graphene graphene/sic(0001) graphene/ni/sic graphene/sic Growth temperature graphene/pt graphene/ni graphene/sic Growth pressure graphene/ni thin film graphene/cu thin film Graphene (GO) Specific area Graphene/graphite Graphene( GO) CVD Graphene/Ni CVD graphene/textured Ni Optical transparency Exfoliated Graphene/Quartz Exfoliated graphene GO Value > 10 7 cm 2 V -1 s -1 at 25 K, cm cm 2 V -1 s -1 at 5 K, cm -2 4x10 3 cm 2 V -1 s -1 at 300 K, cm cm 2 V -1 s -1 at 2 K, cm µm > 200 µm > 200 µm ~ 100 µm 2 µm 50 µm 750 C 1300 C 620 C (methane) 530 C (propylene) 1 mbar with Ar 1 mbar Ar + gas mixture 1 mbar Ar + gas mixture 750 m 2 /g 580 m 2 /g 1500 m 2 /g ~80% transmittance with 6 to 10 graphene layers ~90% in the 500 to 1000 nm 4 nm graphene 90% at 500 nm 80% transmittance at 550 nm 6

8 A good balance and interaction is set between academic and industrials concerns PURPOSES S&T goals They cover a number of fundamental questions that graphene is still currently facing which could get in breakthrough for via a systematic tie to the development operated in the targeted applications. Technological goals Taking benefit by the combination of properties (rather than a single parameter as marker of performance) Transparency & Conductivity (Display) Flexibility & mechanical properties (Display) Conductivity & high surface/volume ratio (Capacitance) Conductivity (S/m) Conductivity (S/m) Transparency (%) ( nm) Target Target Specific area (m 2 /g) Theoretical limit 7

9 S&T objectives Large area synthesis of high quality graphene (to be compatible with semiconductor clean room facilities). Establishing a correlation between graphenelayer numbers and their specific properties (morphology, bandgap, twin between layers, electronic transport, defects, optical, mechanical strength, and adhesion to substrate...). Understanding the nature of most significant disorders (defects) and how they affect the relevant to the graphene properties (transport and optical) Validation of characterization methodologies for evaluation of local structural and physical properties of graphenematerials (i.e. morphology, carrier density, conductivity, thermal properties, adhesion etc). Characterization and modelling of grapheneproperties modification in contact with surrounding environments (liquid or solid phase, adsorbate, substrate, layers, etc) Demonstration of the feasibility and benefit of tailoring grapheneproperties through test vehicles performances 8

10 pathway 9

11 Strong core project has been built to favour technical workpackages communication WP1 Management, Reporting and Evaluation (CEA) -The coordinator (Project coordination committee) -Project Management Board (PMB) will be responsible for managing the project including overseeing the technical roadmap for the project. 10

12 To control the interaction between graphene and its surrounding environment Examples of parameters to control Growth behaviour J. Coraux et al., New J. Phys. 11, (2009) Geometric structure J. Coraux et al., Nano Lett. 8, 565 (2008) Structural defects A. T. N Diaye et al., New J. Phys. 11, (2009) Electronic structure I. Pletikosić et al., Phys. Rev. Lett. 102, (2009) Innovate in graphene processing and nanostructuring Chi Vo-Van et al, APL published soon Mono domain graphene/ir/sapphire A. Zenasni et al, Unpublished results Graphene/Pt Graphene/Ni 11

13 For further information Website of will be available at the beginning of May 2011 Contact information: Aziz Zenasni (Coordinator): Project Management Board: Johann Coraux(CNRS-France) David Busquets Mataix(UPVLC-Spain) Carsten Busse(UC-Germany) Oleg Kolosov (ULANC-UK) Martin Krebs (VARTA-Germany) Daniele Pullini (CRF-Italy) 12