STTH6R4 Ultrafast recovery diode Main product characteristics I F(AV) 6 A V RRM T j 4 V 175 C A K V F (typ).95 V t rr (typ) 31 ns Features and benefits Very low switching losses High frequency and/or high pulsed current operation High junction temperature K DO-247 STTH6R4W A Description The STTH6R4 series uses ST's new 4 V planar Pt doping technology. The STTH6R4 is specially suited for switching mode base drive and transistor circuits. Available in a through-the-hole package, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. Order codes Part Number STTH6R4W Marking STTH6R4W Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 4 V V RSM Non repetitive peak reverse voltage 4 V I F(RMS) RMS forward current 1 A I F(AV) Average forward current, δ =.5 T c = 11 C 6 A I FRM Repetitive peak forward current t p = 5 µs F = 1 khz square 375 A I FSM Surge non repetitive forward current t p = 1 ms Sinusoidal 65 A T stg Storage temperature range -65 to +175 C T j Operating junction temperature range -4 to +175 C March 27 Rev 1 1/7 www.st.com
Characteristics STTH6R4 1 Characteristics Table 2. Thermal parameters Symbol Parameter Value Unit R th(j-c) Junction to case.7 C/W Table 3. Static electrical characteristics Symbol Parameter Test conditions Min Typ Max Unit I R (1) Reverse leakage current T j = 25 C 6 V R = V RRM T j = 125 C 6 6 µa T j = 25 C 1.5 V F (2) Forward voltage drop T j = 1 C I F = 6 A 1.5 1.3 V T j = 15 C.95 1.2 1. Pulse test: t p = 5 ms, δ < 2 % 2. Pulse test: t p = 38 µs, δ < 2 % To evaluate the conduction losses use the following equation: P =.9 x I F(AV) +.5 x I F 2 (RMS) Table 4. Dynamic characteristics Symbol Parameter Test conditions Min Typ Max Unit I F = 1 A, di F /dt = -5 A/µs, V R = 3 V, T j = 25 C 8 t rr Reverse recovery time I F = 1 A, di F /dt = -1 A/µs, V R = 3 V, T j = 25 C 4 55 ns I F = 1 A, di F /dt = -2 A/µs, V R = 3 V, T j = 25 C 31 45 I RM Reverse recovery current I F = 6 A, di F /dt = -2 A/µs, V R = 32 V, T j = 125 C 11 16 A S Softness factor I F = 6 A, di F /dt = -2 A/µs, V R = 32 V, T j = 125 C.4 t fr Forward recovery time I F = 6 A, di F /dt = 1 A/µs V FR = 1.1 x V Fmax, T j = 25 C 8 ns V FP Forward recovery voltage I F = 6 A T j = 25 C di F /dt = 1 A/µs 3.2 V 2/7
STTH6R4 Characteristics Figure 1. Conduction losses versus average current Figure 2. Forward voltage drop versus forward current 1 P(W) 2 I FM (A) 8 6 δ=.5 δ=.1 δ=.2 δ=.5 δ=1 18 16 14 12 1 T J =15 C (Maximum values) T J =15 C (Typical values) 4 8 T 2 I F(AV) (A) δ=tp/t tp 1 2 3 4 5 6 7 8 6 4 T J =25 C (Maximum values) 2 V FM (V)..2.4.6.8 1. 1.2 1.4 1.6 1.8 2. 2.2 Figure 3. Relative variation of thermal impedance junction to case versus pulse duration Figure 4. Peak reverse recovery current versus di F /dt (typical values) 1. Zth (j-c) /Rth (j-c) Single pulse DO-247 25. 22.5 2. 17.5 15. I RM (A) I F = 6A V R =32V 12.5 1. T j =125 C 7.5.1 tp(s) 1.E-3 1.E-2 1.E-1 1.E+ 5. T j =25 C 2.5. 1 1 1 Figure 5. Reverse recovery time versus di F /dt (typical values) Figure 6. Reverse recovery charges versus di F /dt (typical values) 16 14 t RR (ns) I F = 6A V R =32V 8 7 Q RR (nc) I F = 6 A V R =32V 12 6 1 8 T j =125 C 5 4 T j =125 C 6 4 T j =25 C 3 2 T j =25 C 2 1 1 1 1 1 1 1 3/7
Characteristics STTH6R4 Figure 7. Relative variations of dynamic parameters versus junction temperature Figure 8. Transient peak forward voltage versus di F /dt (typical values) 1.4 1.2 1. Q RR [T j]/q RR [T j = 125 C] and IRM [T j]/i RM [T j = 125 C] V Fp (V) 1 I F =6A V R =32V 9 8 7 I F = 6A T j =125 C.8.6 I RM 6 5 4.4.2. Q RR T j ( C) 25 5 75 1 125 15 3 2 1 5 1 15 2 25 3 35 4 45 5 Figure 9. Forward recovery time versus di F /dt (typical values) Figure 1. Junction capacitance versus reverse voltage applied (typical values) 3 25 t FR (ns) I F =6A V FR =1.1 x V F max. T j =125 C 1 C(pF) F=1MHz V OSC =3mV RMS T j =25 C 2 15 1 5 1 2 3 4 5 1 V R (V) 1 1 1 1 4/7
STTH6R4 Package information 2 Package information Epoxy meets UL94, V Cooling method: by conduction (C) Recommended torque value:.8 Nm Maximum torque value: 1. Nm Table 5. DO-247 dimensions Ref. Millimeters Dimensions Inches Min. Typ. Max. Min. Typ. Max. A 4.85 5.15.191.23 V D 2.2 2.6.86.12 V Dia E.4.8.15.31 F 1. 1.4.39.55 H A F2 2..78 F3 2. 2.4.78.94 L5 G 1.9.429 H 15.45 15.75.68.62 L L2 L4 L 19.85 2.15.781.793 L1 3.7 4.3.145.169 L3 V2 F2 F3 L1 D L2 18.5.728 L3 14.2 14.8.559.582 G F M E L4 34.6 1.362 L5 5.5.216 M 2. 3..78.118 V 5 5 V2 6 6 Dia. 3.55 3.65.139.143 In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7
Ordering information STTH6R4 3 Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH6R4W STTH6R4W DO-247 4.4 g 3 Tube 4 Revision history Date Revision Description of Changes 31-Mar-27 1 First issue 6/7
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