Aerospace 45 V power Schottky rectifier Datasheet - production data Description A K K his power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2B package. A he 1N5819U is suitable for switching mode power supplies and high frequency DC to DC converters such as low voltage high frequency inverter, free wheeling or polarity protection. Leadless chip carrier 2 (LCC2B) Features Aerospace applications Surface mount hermetic package High thermal conductivity materials Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop Package mass: 0.18 g arget radiation qualification 150 krad (Si) low dose rate 3 Mrad (Si) high dose rate ESCC qualified Order code ESCC detailed specification able 1. Device summary (1) Quality level Lead finish EPPL I F(AV) V RRM j(max) VF (max) 1N5819UB1 Engineering model Gold 1N5819U01B 56/021/02 ESCC Gold yes 1N5819U02B 56/021/03 ESCC Solder dip yes 1 45 150 0.49 1. Contact S sales office for information about the specific conditions for products in die form. December 2015 DocID16006 Rev 5 1/ his is information on a product in full production. www.st.com
Characteristics 1N5819U 1 Characteristics able 2. Absolute ratings (limiting values) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 45 V I F(RMS) Forward rms current A I F(AV) Average forward rectified current c 142 Cδ = 0.5 1 A I FSM Forward surge current t p = ms sinusoidal 25 A stg Storage temperature range -65 to +150 C j Maximum operating junction temperature (1) 150 C sol Maximum soldering temperature (2) 245 C 1. dp tot 1 < d Rth(j-a) j condition to avoid runaway for a diode on its own heatsink 2. Maximum duration 5 s. he same package must not be re-soldered until 3 minutes have elapsed. able 3. hermal resistance Symbol Parameter Value Unit R th (j-c) Junction to case 16 C/W 2/ DocID16006 Rev 5
Characteristics able 4. Static electrical characteristics Symbol Parameter est conditions Min. yp. Max. Unit j = 25 C - - 20 µa V R = 45 V j = 0 C - - 3.5 ma j = -55 C V R = 45 V - - 20 j = -55 C V R = 40 V - - µa I R (1) Reverse leakage current j = 25 C - - 15 V R = 40 V j = 0 C - - 3 j = 0 C V R = 35 V - - 2.5 j = 0 C V R = 24 V - - 1.6 j = 0 C V R = 12 V - - 1.2 ma j = 0 C V R = 6 V - - 1 j = 25 C I F = 0.1 A - - 350 j = 25 C - - 490 V F (2) Forward voltage drop j = 0 C I F = 1A - - 450 mv j = - 55 C - - 650 j = 25 C I F = 3.1 A - - 800 1. Pulse test: t p = 5 ms, δ < 2% 2. Pulse test: t p = 680 µs, δ < 2% o evaluate the conduction losses use the following equation: 2 P = 0.285 x IF(AV) + 0.165 x I F (RMS ) able 5. Dynamic characteristics Symbo l Parameter est conditions Min. y p. Max. Uni t C j Diode capacitance V R = 5 V, F = 1 MHz - - 70 pf DocID16006 Rev 5 3/
Characteristics 1N5819U Figure 1. Average forward power dissipation versus average forward current 0.9 P F(AV) (W) 1.2 Figure 2. Average forward current versus ambient temperature ( = 0.5) I F(AV) (A) 0.8 0.7 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 1.0 R th(j-a) = R th(j-c) 0.6 0.8 0.5 0.4 0.6 0.3 0.2 0.1 δ =t p / I t p (A) F(AV) 0.0 0.0 0.2 0.4 06 0.8 1.0 1.2 1.4 1.6 0.4 0.2 δ =t p / t p amb 0.0 0 25 50 75 0 125 150 ( C) Figure 3. Non repetitive surge peak forward current versus overload duration (maximum values) Figure 4. Relative variation of thermal impedance junction to case versus pulse duration 16 I (A) M 1.0 0.9 Z th(j-c) / R th(j-c) 14 0.8 12 0.7 8 6 4 2 I M 0 1.E-03 t δ = 0.5 1.E-02 1.E-01 C = 25 C C = 75 C C = 125 C t(s) 1.E+00 0.6 0.5 0.4 0.3 Single pulse 0.2 0.1 0.0 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 t (s) p 1.E+01 Figure 5. Reverse leakage current versus reverse voltage applied (typical values) Figure 6. Forward voltage drop versus forward current (typical values) 1.E+02 1.E+01 1.E+00 I (ma) R j = 150 C j = 125 C j = 0 C.00 1.00 I (A) FM 1.E-01 1.E-02 1.E-03 j = 75 C = 50 C j = 25 C j V (V) R 1.E-04 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0. j = 0 C j = 25 C j = -55 C V (V) FM 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 4/ DocID16006 Rev 5
Characteristics Figure 7. Non repetitive surge peak forward current versus number of cycles 30 25 I FSM (A) F = 50 Hz j initial = 25 C 20 15 5 Number of cycles 0 0 0 00 DocID16006 Rev 5 5/
Package information 1N5819U 2 Package information In order to meet environmental requirements, S offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an S trademark. 2.1 Leadless chip carrier 2 (LCC2B) package information Figure 8. Leadless chip carrier 2 (LCC2B) package outline A B D Note 1 2 C 1 F Note 1 Pin 2 Cathode E Note 1 E Pin 1 Anode H 1 2 r1 G I r2 1. he anode is identified by metalization in two top internal angles and the index mark. 6/ DocID16006 Rev 5
Package information able 6. Leadless chip carrier 2 (LCC2B) package mechanical data Dimensions Ref. Millimeters Inches Min. yp. Max. Min. yp. Max. A (1) 2.04 2.23 2.42 0.080 0.088 0.095 B 5.27 5.4 5.6 0.207 0.213 0.220 C 3.49 3.62 3.76 0.137 0.143 0.148 D 1.71 1.90 2.09 0.067 0.075 0.082 E 0.48-0.71 0.019-0.028 F - 1.4 - - 0.055 - G - 3.32 - - 0.131 - H - 1.82 - - 0.072 - I - 0.15 - - 0.006 - r1-0.15 - - 0.006 - r2-0.20 - - 0.008-1. Measurement prior to solder coating the mounting pads on bottom of package DocID16006 Rev 5 7/
Ordering information 1N5819U 3 Ordering information able 7. Ordering information (1) Order code 1N5819UB1 ESCC detailed specification Package Lead finish Marking (2) EPPL Mass Packing Gold 1N5819UB1-1N5819U01B 56/021/02 LCC2B Gold 56022 Y 0.18 g Waffle pack 1N5819U02B 51/021/03 Solder dip 56023 Y 1. Contact S sales office for information about the specific conditions for products in die form. 2. Specific marking only. he full marking includes in addition: For the engineering models: S logo, date code, country of origin (FR). For ESCC flight parts: S logo, date code, country of origin (FR), ESA logo, serial number of the part within the assembly lot. 4 Other information 4.1 Date code Date code is structured as describe below: EM xyywwz ESCC flight yywwz Where: x (EM only): 3, assembly location Rennes (France) yy: last two digits year ww: week digits z: lot index in the week 4.2 Documentation In able 8 is a summary of the documentation provided with each type of products. able 8. Documentation provided with each type of products Quality level Documentation Engineering model ESCC flight Certificate of conformance 8/ DocID16006 Rev 5
Revision history 5 Revision history able 9. Document revision history Date Revision Changes -Aug-2009 1 First issue. 07-Jun-20 2 Updated ESCC specification codes in able 1 and able 7. 23-Sep-2011 3 Updated able 1 and able 7 for ESCC qualification. 8-Nov-2013 4 Updated able 1, able 5 and able 7 and inserted Other information. 04-Dec-2015 5 Updated able 7 and reformatted to current standard. DocID16006 Rev 5 9/
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