STTH16L6C-Y Automotive turbo 2 ultrafast high voltage rectifier Description Datasheet - production data A1 A2 K The STTH16L6C-Y is developed using ST s Turbo 2 6 V technology. It s specially suited for use in switching power supplies as rectifier and discontinuous mode PC boost diode for automotive applications. Table 1. Device summary eatures A2 K A1 TO-22AB Symbol Value I (AV) Up to 2 x 1 A V RRM 6 V T j 175 C V (typ) 1.5 V t rr (max) 35 ns AEC-Q11 qualified Ultrafast switching Low reverse recovery current Reduces switching and conduction losses Low thermal resistance PPAP capable ECOPACK 2 compliant component December 214 DocID26936 Rev 2 1/9 This is information on a product in full production. www.st.com
Characteristics STTH16L6C-Y 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage, T j = -4 C 6 V I (RMS) orward rms current 3 A T c = 14 C Per diode 8 I (AV) Average forward current δ =.5 TO-22AB T c = 135 C Per device 16 T c = 13 C Per diode 1 A T c = 12 C Per device 2 I SM Surge non repetitive forward current t p = 1 ms sinusoidal 12 A T stg Storage temperature range -65 to + 175 C T j Operating junction temperature -4 to +175 C Table 3. Thermal parameter Symbol Parameter Maximum Unit TO-22AB Per diode 2.5 R th(j-c) Junction to case TO-22AB Total 1.6 R th(c) Coupling TO-22AB.7 C/W When the diodes 1 and 2 are used simultaneously: Δ T j (diode1) = P (diode1) x R th(j-c) (per diode) + P (diode2) x R th(c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit I R (1) Reverse leakage current T j = 25 C 8 V R = V RRM T j = 15 C 25 24 µa V (2) orward voltage drop T j = 25 C 1.8 I = 8A T j = 15 C 1.5 1.35 T j = 25 C 2.8 I = 16A T j = 15 C 1.28 1.64 V 1. Pulse test: t p = 5 ms, δ < 2% 2. Pulse test: t p = 38 µs, δ < 2% To evaluate the maximum conduction losses use the following equation: P = 1.6 x I (AV) +.36 I 2 (RMS) 2/9 DocID26936 Rev 2
STTH16L6C-Y Characteristics Table 5. Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit t rr Reverse recovery time T j = 25 C I RM Reverse recovery current T j = 125 C I =.5 A, I rr =.25 A, I R = 1 A I = 1 A, di /dt = 5 A/µs, V R = 3 V I = 8 A, di /dt = 1 A/µs, V R = 4 V 35 4 55 ns 4.5 6.5 A t fr orward recovery time I = 8 A 2 ns T j = 25 C di /dt = 1 A/µs V P orward recovery voltage 3.5 V V R = 1.1 x V max DocID26936 Rev 2 3/9 9
Characteristics STTH16L6C-Y igure 1. Conduction losses versus average current igure 2. orward voltage drop versus forward current 15 P(W) 1 I M(A) δ =.5 δ =.1 δ =.2 δ =.5 9 8 T j=15 C (maximum values) 1 δ = 1 7 6 5 T j=15 C (typical values) T j=25 C (maximum values) 5 T 4 3 2 I (AV) δ=tp/t tp 2 4 6 8 1 (A) 1 V M(V)..5 1. 1.5 2. 2.5 3. 3.5 igure 3. Peak reverse recovery current versus di /dt (typical values, per diode) igure 4. Reverse recovery time versus di /dt (typical values, per diode) 18 16 I RM(A) V R=4V I =2 x I(AV) 4 35 t (ns) rr V R=4V 14 12 1 8 6 I =.5 x I(AV) I=I (AV) 3 25 2 15 I =2 x I(AV) I=I (AV) I =.5 x I(AV) 4 1 2 5 1 15 2 25 3 35 4 45 5 5 5 1 15 2 25 3 35 4 45 5 igure 5. Reverse recovery charges versus di /dt (typical values, per diode) 8 75 7 65 6 55 5 45 4 35 3 25 2 15 1 5 Q (nc) rr V R=4V I =2 x I(AV) I=I (AV) I =.5 x I(AV) 1 2 3 4 5 1.6 1.4 1.2 1..8.6.4.2. igure 6. Softness factor versus di /dt (typical values, per diode) S factor I < 2 x I(AV) V R=4V 5 1 15 2 25 3 35 4 45 5 4/9 DocID26936 Rev 2
STTH16L6C-Y Characteristics 1.4 1.2 1..8.6.4.2. igure 7. Relative variations of dynamic parameters versus junction temperature trr IRM QRR S factor T ( C) j I=I (AV) V R=4V Reference: 25 5 75 1 125 igure 8. Transient peak forward voltage versus di /dt (typical values, per diode) 16 15 14 13 12 11 1 9 8 7 6 5 4 3 2 1 V P(V) I=I (AV) 5 1 15 2 25 3 35 4 45 5 igure 9. orward recovery time versus di /dt (typical values, per diode) igure 1. Junction capacitance versus reverse voltage applied (typical values, per diode) 18 16 14 t (ns) fr I=I (AV) V R=1.1 x V max. 1 C(p) =1MHz V OSC=3mVRMS T j=25 C 12 1 8 1 6 4 2 1 2 3 4 5 1 V (V) R 1 1 1 1 DocID26936 Rev 2 5/9 9
Package information STTH16L6C-Y 2 Package information Epoxy meets UL94, V Cooling method: by conduction (C) Recommended torque value for TO-22AB and TO-22PAB:.4 N m to.6 N m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. igure 11. TO-22AB dimension definitions E A Resin gate.5 mm max. protrusion (1) P Q H1 D D1 L2 L3 b1 L1 J1 b L e Resin gate.5 mm max. protrusion (1) e1 (1) Resin gate position accepted in each of the two position shown as well as the symmetrical opposites c 6/9 DocID26936 Rev 2
STTH16L6C-Y Package information Ref. Table 6. TO-22AB dimension values Millimeters Dimensions Inches Min. Max. Min. Max. A 4.4 4.6.17.18 b.61.88.24.35 b1 1.14 1.7.45.67 c.48.7.19.27 D 15.25 15.75.6.62 D1 1.27 typ..5 typ. E 1 1.4.39.41 e 2.4 2.7.94.16 e1 4.95 5.15.19.2 1.23 1.32.48.52 H1 6.2 6.6.24.26 J1 2.4 2.72.94.17 L 13 14.51.55 L1 3.5 3.93.137.154 L2 16.4 typ..64 typ. L3 28.9 typ. 1.13 typ. P 3.75 3.85.147.151 Q 2.65 2.95.14.116 DocID26936 Rev 2 7/9 9
Ordering information STTH16L6C-Y 3 Ordering information Table 7. Ordering information Order code Marking Package Weight Base qty Delivery mode STTH16L6CTY STTH16L6CTY TO-22AB 2.23 g 5 Tube 4 Revision history Table 8. Document revision history Date Revision Changes 19-Nov-214 1 irst issue. 12-Dec-214 2 Removed TO-22PAB and D²PAK package information. 8/9 DocID26936 Rev 2
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