STTH31 Ultrafast recovery - 1 V diode Main product characteristics I (AV) 3 A V RRM 1 V T j 175 C V (typ) 1.15 V t rr (typ) 55 ns K A K eatures and benefits Ultrafast, soft recovery Very low conduction and switching losses High frequency and/or high pulsed current operation High reverse voltage capability High junction temperature Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. Order codes Part Number STTH31B STTH31B-TR NC DPAK STTH31B A Marking STTH31B STTH31B March 6 Rev 1 1/8 www.st.com 8
Characteristics STTH31 1 Characteristics Table 1. Absolute ratings (limiting values at 5 C, unless otherwise specified) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 1 V I (RMS) RMS forward current 6 A I (AV) Average forward current, δ =.5 T c = 15 C 3 A I RM Repetitive peak forward current t p = 5 µs, = 5 khz square 35 A I SM Surge non repetitive forward current t p = 1 ms Sinusoidal 35 A T stg Storage temperature range -65 to + 175 C T j Maximum operating junction temperature 175 C Table. Thermal parameter Symbol Parameter Value Unit R th(j-c) Junction to case 3.8 C/W Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit I R (1) Reverse leakage current T j = 5 C 1 V R = V RRM T j = 15 C 1 µa T j = 5 C V () orward voltage drop T j = 15 C I = 3 A 1. 1.7 V T j = 15 C 1.15 1.65 1. Pulse test: t p = 5 ms, δ < %. Pulse test: t p = 38 µs, δ < % To evaluate the conduction losses use the following equation: P = 1.4 x I (AV) +.1 I (RMS) /8
STTH31 Characteristics Table 4. Dynamic characteristics Symbol Parameter Test conditions Min. Typ Max. Unit t rr Reverse recovery time I = 1 A, di /dt = -5 A/µs, V R = 3 V, T j = 5 C I = 1 A, di /dt = -1 A/µs, V R = 3 V, T j = 5 C 115 55 8 ns I RM Reverse recovery current I = 3 A, di /dt = - A/µs, V R = 6 V, T j = 15 C 9.5 14 A S Softness factor I = 3 A, di /dt = - A/µs, V R = 6 V, T j = 15 C t fr orward recovery time I = 3 A di /dt = 5 A/µs V R = 1.5 x V max, T j = 5 C 35 ns V P orward recovery voltage I = 3 A, di /dt = 5 A/µs, T j = 5 C 1 V igure 1. Conduction losses versus average current igure. orward voltage drop versus forward current 7 P(W) 5 I M(A) 6 5 4 3 δ =.5 δ =.1 δ =. δ =.5 δ = 1 45 4 35 3 5 T j=15 C (typical values) T j=15 C (maximum values) T j=5 C (maximum values) 1 T I (AV) (A) δ=tp/t tp..5 1. 1.5..5 3. 3.5 15 1 5 V M(V)..5 1. 1.5..5 3. 3.5 4. 4.5 5. igure 3. Relative variation of thermal impedance junction to case versus pulse duration igure 4. Peak reverse recovery current versus di /dt (typical values) 1..9.8.7.6.5.4.3..1. Z th(j-c) /Rth(j-c) Single pulse t (s) p 1.E-3 1.E- 1.E-1 1.E+ 4 18 16 14 1 1 8 6 4 I RM(A) V R=6V I =.5 x I(AV) I=I (AV) I = x I(AV) 5 1 15 5 3 35 4 45 5 3/8
Characteristics STTH31 igure 5. Reverse recovery time versus di /dt (typical values) igure 6. Reverse recovery charges versus di /dt (typical values) 4 35 t (ns) rr V R=6V 1 1 Q (nc) rr V R=6V I = x I(AV) 3 I = x I(AV) 5 I=I (AV) I =.5 x I(AV) 8 6 I=I (AV) I =.5 x I(AV) 15 1 5 5 1 15 5 3 35 4 45 5 4 5 1 15 5 3 35 4 45 5 igure 7. Softness factor versus di /dt (typical values) igure 8. Relative variations of dynamic parameters versus junction temperature 3.5 3. S factor I xi(av) V R=6V.5.5. I=I (AV) V R=6V Reference:.5 1.75 1.5 S factor. 1.5 1..5 5 1 15 5 3 35 4 45 5 1.5 1..75.5.5. QRR IRM trr T ( C) j 5 5 75 1 15 igure 9. 6 55 5 45 4 35 3 5 15 1 5 V P(V) I=I (AV) Transient peak forward voltage versus di /dt (typical values) 5 5 75 1 15 15 175 5 5 75 3 igure 1. 7 6 5 4 3 1 t (ns) fr orward recovery time versus di /dt (typical values) I=I (AV) V R=1.5 x V max. 1 3 4 5 4/8
STTH31 Characteristics igure 11. 1 1 C(p) Junction capacitance versus reverse voltage applied (typical values) =1MHz V OSC=3mVRMS T j=5 C igure 1. R th(j-a) ( C/W) 1 9 8 7 6 5 4 3 Thermal resistance junction to ambient versus copper surface under tab (printed circuit board R4, e cu = 35 µm) 1 V (V) R 1 1 1 1 1 S CU (cm²) 5 1 15 5 3 35 4 5/8
Package mechanical data STTH31 Package mechanical data Epoxy meets UL94, V Cooling method: by conduction (C) Table 5. DPAK dimensions DIMENSIONS RE. Millimeters Inches Min. Max Min. Max. E A A..4.86.94 B C A1.9 1.1.35.43 L A.3.3.1.9 B.64.9.5.35 H L4 G B A1 R C R D B 5. 5.4.4.1 C.45.6.17.3 C.48.6.18.3 D 6. 6..36.44 E 6.4 6.6.51.59.6 MIN. A G 4.4 4.6.173.181 H 9.35 1.1.368.397 V L.8 typ..31 typ. L4.6 1..3.39 V 8 8 igure 13. DPAK footprint (dimensions in mm) 6.7 3 3 1.6 6.7.3.3 1.6 In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 6/8
STTH31 Ordering information 3 Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH31B STTH31B DPAK.3 g 75 Tube STTH31B-TR STTH31B DPAK.3 g 5 Tape & reel 4 Revision history Date Revision Description of Changes -Mar-6 1 irst issue. 7/8
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