Ultrafast recovery diode Main product characteristics I F(AV) 2 X 8 A A1 A2 K V RRM 4 V T j 175 C V F (typ) t rr (typ).9 V 25 ns A1 K A2 A1 A2 K Features and benefits TO-22AB T TO-22FPAB FP Very low switching losses High frequency and/or high pulsed current operation High junction temperature Insulated package: TO-22FPAB Electrical insulation = 15 V RMS Capacitance = 12 pf K A2 A1 D 2 PAK G Description The series uses ST's new 4 V planar Pt doping technology. The is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. Order codes Part Number T G G-TR FP Marking T G G FP March 27 Rev 1 1/1 www.st.com
Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 4 V I F(RMS) RMS forward current 3 A I F(AV) Average forward current, δ =.5 TO-22AB / D 2 PAK Per diode T c = 15 C 8 Per device T c = 145 C 16 A Per diode T c = 125 C 8 TO-22FPAB Per device T c = 9 C 16 I FSM Surge non repetitive forward current t p = 1 ms Sinusoidal 12 A T stg Storage temperature range -65 to +175 C T j Maximum operating junction temperature range -4 to +175 C Table 2. Thermal parameters Symbol Parameter Value Unit R th(j-c) Junction to case TO-22AC / D 2 PAK TO-22FPAB Per diode 2 Per device 1.15 Per diode 4.6 per device 3.8 C/W R th(c) Coupling TO-22AC / D 2 PAK Per device.3 TO-22FPAB per device 3 C/W When the diodes are used simultaneously: ΔT j(diode 1) = P (diode1) x R th(j-c)(per diode) + P (diode 2) x R th(c) 2/1
Characteristics Table 3. Static electrical characteristics Symbol Parameter Test conditions Min Typ Max Unit I R (1) Reverse leakage current T j = 25 C 1 V R = V RRM T j = 125 C 1 1 µa T j = 25 C 1.5 T j = 1 C I F = 8 A 1.5 1.3 V F (2) Forward voltage drop T j = 15 C.9 1.1 T j = 25 C 1.75 V T j = 1 C I F = 16 A 1.25 1.55 T j = 15 C 1.12 1.37 1. Pulse test: t p = 5 ms, δ < 2 % 2. Pulse test: t p = 38 µs, δ < 2 % To evaluate the conduction losses use the following equation: P =.83 x I F(AV) +.34 x I F 2 (RMS) Table 4. Dynamic characteristics Symbol Parameter Test conditions Min Typ Max Unit t rr Reverse recovery time I F = 1 A, di F /dt = -5 A/µs, V R = 3 V, T j = 25 C I F = 1 A, di F /dt = -1 A/µs, V R = 3 V, T j = 25 C 35 5 25 35 ns I RM Reverse recovery current I F = 8 A, di F /dt = -2 A/µs, V R = 32 V, T j = 125 C 5.5 8 A S Softness factor I F = 8 A, di F /dt = -2 A/µs, V R = 32 V, T j = 125 C.4 t fr Forward recovery time I F = 8 A, di F /dt = 1 A/µs V FR = 1.1 x V Fmax, T j = 25 C 15 ns V FP Forward recovery voltage I F = 8 A, di F /dt = 1 A/µs T j = 25 C 2.9 V 3/1
Characteristics Figure 1. Conduction losses versus average current Figure 2. Forward voltage drop versus forward current 13 12 11 1 9 8 7 6 5 4 3 2 1 P(W) δ=.5 δ=.1 δ=.2 δ=.5 δ=1 T I F(AV) (A) δ=tp/t tp 1 2 3 4 5 6 7 8 9 1 11 2 18 16 14 12 1 8 6 4 2 I FM (A) T J =15 C (Maximum values) T J =15 C (Typical values) T J =25 C (Maximum values) V FM (V)..4.8 1.2 1.6 2. 2.4 2.8 3.2 3.6 4. Figure 3. Relative variation of thermal impedance junction to case versus pulse duration Figure 4. Relative variation of thermal impedance junction to case versus pulse duration TO-22FPAB 1. Zth (j-c) /Rth (j-c) Single pulse TO-22AB/D²PAK 1. Zth (j-c) /Rth (j-c) Single pulse TO-22FPAB.1.1 tp(s) 1.E-3 1.E-2 1.E-1 1.E+. tp(s) 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 Figure 5. Peak reverse recovery current versus di F /dt (typical values) Figure 6. Reverse recovery time versus di F /dt (typical values) 12 11 1 9 8 7 6 5 4 3 2 1 I RM (A) I F = 8 A V R =32 V T j =125 C T j =25 C di F /dt(a/µs) 1 1 1 14 12 1 8 6 4 2 t RR (ns) T j =125 C T j =25 C di F /dt(a/µs) I F = 8 A V R =32 V 1 1 1 4/1
Characteristics Figure 7. Reverse recovery charges versus di F /dt (typical values) Figure 8. Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, e CU = 35 µm) 2 18 16 14 12 Q RR (nc) I F = 8 A V R =32 V T j =125 C 8 7 6 5 Rth (j-a) ( C/W) D²PAK 1 8 6 T 4 j =25 C 2 di F /dt(a/µs) 1 1 1 4 3 2 1 S CU (cm²) 2 4 6 8 1 12 14 16 18 2 Figure 9. Relative variations of dynamic parameters versus junction temperature Figure 1. Transient peak forward voltage versus di F /dt (typical values) 1.4 1.2 1. Q RR [T j]/q RR [T j = 125 C] and IRM [T j]/i RM [T j = 125 C] I F = 8 A V R =32 V 5. 4.5 4. 3.5 V Fp (V) I F =8 A T j =125 C.8.6 I RM 3. 2.5 2..4.2. Q RR T j ( C) 25 5 75 1 125 15 1.5 1..5 di F /dt(a/µs). 5 1 15 2 25 3 35 4 45 5 Figure 11. Forward recovery time versus di F /dt (typical values) Figure 12. Junction capacitance versus reverse voltage applied (typical values) 7 6 t FR (ns) I F =8 A V FR =1.1 x V F max. T j =125 C 1 C(pF) F=1MHz V OSC =3mV RMS T j =25 C 5 4 3 2 1 di F /dt(a/µs) 1 2 3 4 5 1 V R (V) 1 1 1 1 5/1
Package information 2 Package information Epoxy meets UL94, V Cooling method: by conduction (C) Recommended torque value:.8 Nm (TO-22FPAB) /.55 Nm (TO-22AB) Maximum torque value: 1. Nm (TO-22FPAB) /.7 Nm (TO-22AB) Table 5. D 2 PAK dimensions Ref. Millimeters Dimensions Inches Min. Max. Min. Max. A 4.4 4.6.173.181 L2 E C2 A A1 2.49 2.69.98.16 A2.3.23.1.9 B.7.93.27.37 L L3 B2 B A1 C R D B2 1.14 1.7.45.67 C.45.6.17.24 C2 1.23 1.36.48.54 D 8.95 9.35.352.368 G E 1. 1.4.393.49 M A2 * V2 * FLAT ZONE NO LESS THAN 2mm G 4.88 5.28.192.28 L 15. 15.85.59.624 L2 1.27 1.4.5.55 L3 1.4 1.75.55.69 M 2.4 3.2.94.126 R.4 typ..16 typ. V2 8 8 Figure 13. D 2 PAK footprint (dimensions in mm) 16.9 1.3 5.8 1.3 8.9 3.7 6/1
Package information Table 6. TO-22AB dimensions Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 15.2 15.9.598.625 a1 3.75.147 B Ø I L b2 C F a2 13. 14..511.551 B 1. 1.4.393.49 b1.61.88.24.34 A b2 1.23 1.32.48.51 I4 l3 l2 a1 a2 c2 C 4.4 4.6.173.181 c1.49.7.19.27 c2 2.4 2.72.94.17 e 2.4 2.7.94.16 e b1 M c1 F 6.2 6.6.244.259 ØI 3.75 3.85.147.151 I4 15.8 16.4 16.8.622.646.661 L 2.65 2.95.14.116 l2 1.14 1.7.44.66 l3 1.14 1.7.44.66 M 2.6.12 7/1
Package information Table 7. TO-22FPAB dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.4 4.6.173.181 H A B B 2.5 2.7.98.16 D 2.5 2.75.98.18 E.45.7.18.27 Dia F.75 1.3.39 L6 F1 1.15 1.7.45.67 L2 L7 F2 1.15 1.7.45.67 L3 G 4.95 5.2.195.25 L4 F1 F2 L5 D G1 2.4 2.7.94.16 H 1 1.4.393.49 L2 16 Typ..63 Typ. G1 F E L3 28.6 3.6 1.126 1.25 L4 9.8 1.6.386.417 G L5 2.9 3.6.114.142 L6 15.9 16.4.626.646 L7 9. 9.3.354.366 Dia. 3. 3.2.118.126 In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 8/1
Ordering information 3 Ordering information Part Number Marking Package Weight Base qty Delivery mode T T TO-22AB 1.92 g 5 Tube G G D 2 PAK 1.48 g 5 Tube G-TR G D 2 PAK 1.48 g 1 Tape and reel FP FP TO-22FPAB 1.69 g 5 Tube 4 Revision history Date Revision Description of Changes 31-Mar-27 1 First issue 9/1
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