EE C245 - ME C218 Introduction to MEMS Design Fall Today s Lecture
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1 EE 45 - ME 8 Inrducin MEMS Dein Fall 003 Rer Hwe and Thara Sriniaan Lecure apaciie Piin Senin Tday Lecure The capacir a a piin enr apaciie enin cnfiurain: diider wih unbalanced, balanced drie Pracical iue: her capacir are alway preen! ulimae piin reluin The capacir a a elciy enr Readin: Senuria, S. D., Micryem Dein, Kluwer Academic Publiher, 00, haper 9, pp , haper 6,
2 The Simple apacir Diider c ω in 0 X u u Why mdulae? Ideal buffer: in 0 3 A apaciie Diider frm he Early Day Meal ae f MOSFET i direcly cnneced he p plae f he ene capacir B.. her capacir p i paraiic Quein: hw i he penial B e? p K. E. Peeren IBM Almaden, IEEE IEDM,
3 3 5 Mached Air-Gap Reference apacir A ε A ε cmplian upenin erical a z eniiiy iff upenin: ineniie Weijie Yun, P. R. Gray, and R. T. Hwe, Hiln Head Wrkhp, 99, pp Simple apacir Diider n. / / A A u ε ε Offe inal i undeirable fr buffer amplifier and fr dwnream inal prcein
4 4 7 apacir Diider Wih Differenial Eciain u c ω c ω X in 0 Why mdulae and -? Ideal buffer: in 0 Impedance diider wih uperpiin: c ω u 8 Impred apaciie Diider n. u u n ffe c... c u ω ω dirin
5 Paraiic Elecraic Frce fr Differenial Eciain c ω in 0 X f mall diplacemen c u ω d u ε u 0 fr mall diplacemen A c ω Frce ha bh D and ω cmpnen: pull-in and renan eciain can happen! 9 The apaciie Half-Bride c ω ε A/ in 0 X u - ε A/ - - c ω Impedance diider wih uperpiin: u 0 5
6 apaciance Half Bride n. Simplify eprein: u n ffe Elecraic frce: f d d u u Elecraic Frce n. cω c u u ω f Oupu lae i prprinal he diplacemen 6
7 Elecraic Sprin nan k e c ω f c ω - c ω 3 Paraiic apaciance Surface micrmachined z-ai parallel-plae capacir Gary Fedder, Ph.D. hei, EES, U Berkeley,
8 Equialen ircui pp : nminal plae ene capacir f : frine capaciance arie wih plae diplacemen f : frine capaciance beween upper plae cnneced anchr plane and lwer plae lih dependence n pu : paraiic capaciance frm upper plae ubrae pl : paraiic capaciance frm lwer plae ubrae Gary Fedder, Ph.D. hei, EES, U Berkeley, elciy Senin Fundamenal curren-lae relainhip fr a imearyin capacir: dq i d d d d d d [ ] nider pecial cae: P cnan ued in hih-qualiy capaciance micrphne 6 8
9 elciy Senin n. Sene capacir ime ariain: d d d d Parallel-plae ene capacir wih ap : d Harmnic min: i P d 0 cω 7 Sme Number Surface micrmachined capacir: ADXL-50 ene capacir u S 00 ff µm S.5 / µ m 00 u µ min min u min S nie in buffer amp 8 9
10 Wrld Recrd apaciie Piin-Sene Reluin* Anal Deice ADRS-50 ibrary rae yrcpe Jhn Geen, See Sherman, Jhn han, and See Lewi, IEEE J. Slid-Sae ircui, 37, Dec. 00, Full cale rili-induced diplacemen 0 Å Sene capaciance 000 ff Minimum deecable capaciance chane zf 0.0 af Nminal ene ap.6 µm Minimum diplacemen: 6 fm! *urface micrmachinin cla audi frequency band 9 I ADI Spliin Elecrn? A 5, he chare n he ene capacir i: 00 ff 5 f q 5000 Number f elecrn a /elecrn: n Minimum deecable chane in ene chare: zf 5 z q, min 60 Minimum deeced chane in number f elecrn: n q / q e 600 /
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