NDP4050L / NDB4050L N-Channel Logic Level Enhancement Mode Field Effect Transistor

Transcription

1 April 996 NP45L / NB45L N-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These logic level N-Channel enhancemen mode power field effec ransisors are produced using Fairchild's proprieary, high cell densiy, MOS echnology. This very high densiy process has been especially ailored o minimize on-sae resisance, provide superior swiching performance, and wihsand high energy pulses in he avalanche and commuaion modes. These devices are paricularly suied for low volage applicaions such as auomoive, C/C converers, PWM moor conrols, and oher baery powered circuis where fas swiching, low in-line power loss, and resisance o ransiens are needed. 5A, 5V. R S(ON) V = 5V Low drive requiremens allowing operaion direcly from logic drivers. V (TH) <.V. Criical C elecrical parameers specified a elevaed emperaure. Rugged inernal source-drain diode can eliminae he need for an exernal Zener diode ransien suppressor. 75 C maximum juncion emperaure raing. High densiy cell design for exremely low R S(ON). TO- and TO-63 ( PAK) package for boh hrough hole and surface moun applicaions. G S Absolue Maximum Raings T C = 5 C unless oherwise noed Symbol Parameer NP45L NB45L Unis V SS rain-source Volage 5 V V GR rain-gae Volage (R < MΩ) 5 V V S Gae-Source Volage - Coninuous ± 6 V - Nonrepeiive ( P < 5 µs) ± 5 I rain Curren - Coninuous 5 A - Pulsed 45 P Toal Power T C = 5 C 5 W erae above 5 C.33 W/ C,T STG Operaing and Sorage Temperaure -65 o 75 C T L Maximum lead emperaure for soldering purposes, /8" from case for 5 seconds 75 C 997 Fairchild Semiconducor Corporaion NP45L Rev. B / NB45L Rev. C

2 Elecrical Characerisics (T C = 5 C unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis RAIN-SOURCE AVALANCHE RATIN (Noe ) W SS Single Pulse rain-source Avalanche Energy V = 5 V, I = 5 A 4 m I AR Maximum rain-source Avalanche Curren 5 A OFF CHARACTERISTICS BV SS rain-source Breakdown Volage V = V, I = 5 µa 5 V I SS Zero Gae Volage rain Curren V S = 5 V, V = V 5 µa =5 C ma I SF Gae - Body Leakage, Forward V = 6 V, V S = V na I SR Gae - Body Leakage, Reverse V = -6 V, V S = V - na ON CHARACTERISTICS (Noe ) V (h) Gae Threshold Volage V S = V, I = 5 µa.5 V =5 C R S(ON) Saic rain-source On-Resisance V = 5 V, I = 7.5 A.85. Ω =5 C.4.6 V = V, I = 5 A.7.8 I (on) On-Sae rain Curren V = 5 V, V S = V 5 A g FS Forward Transconducance V S = V, I = 7.5 A 3 8 S YNAMIC CHARACTERISTICS C iss Inpu Capaciance V S = 5 V, V = V, 5 6 pf C oss Oupu Capaciance f =. MHz 7 pf C rss Reverse Transfer Capaciance 5 pf SWITCHING CHARACTERISTICS (Noe ) (on) Turn - On elay Time V = 3 V, I = 5 A, 9 ns r Turn - On Rise Time V = 5 V, R GEN = 5 Ω, R = 5 Ω 5 5 ns (off) Turn - Off elay Time 35 ns f Turn - Off Fall Time 6 5 ns Q g Toal Gae Charge V S = 48 V, 7 nc Q gs Gae-Source Charge I = 5 A, V = 5 V nc Q gd Gae-rain Charge 6. nc NP45L Rev. B / NB45L Rev. C

3 Elecrical Characerisics (T C = 5 C unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis RAIN-SOURCE IOE CHARACTERISTICS I S Maximum Coninuos rain-source iode Forward Curren 5 A I SM Maximum Pulsed rain-source iode Forward Curren 45 A V S rain-source iode Forward Volage V = V, I S = 7.5 A (Noe ).95.3 V = 5 C.88. Reverse Recovery Time V = V, I F = 5 A, 5 ns rr di F /d = A/µs I Reverse Recovery Curren A rr THERMAL CHARACTERISTICS R θc Thermal Resisance, uncion-o-case 3 C/W R θa Thermal Resisance, uncion-o-ambien 6.5 C/W Noe:. Pulse Tes: Pulse Widh < 3 µs, uy Cycle <.%. NP45L Rev. B / NB45L Rev. C

4 Typical Elecrical Characerisics I, RAIN-SOURCE CURRENT (A) V = V V, RAIN-SOURCE VOLTAGE (V) S Figure. On-Region Characerisics R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE V = 3.V I, RAIN CURRENT (A) Figure. On-Resisance Variaion wih Gae Volage and rain Curren R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE I = 7.5A V = 5V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE.5.5 V = 5 V T = 5 C 5 C -55 C T, UNCTION TEMPERATURE ( C) Figure 3. On-Resisance Variaion wih Temperaure I, RAIN CURRENT (A) Figure 4. On-Resisance Variaion wih rain Curren and Temperaure I, RAIN CURRENT (A) V S = V T = -55 C 5 C 5 C V h, NORMALIZE GATE-SOURCE THRESHOL VOLTAGE V S = V I = 5µA V, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characerisics T, UNCTION TEMPERATURE ( C) Figure 6. Gae Threshold Variaion wih Temperaure NP45L Rev. B / NB45L Rev. C

5 S SS Typical Elecrical Characerisics (coninued) BV, NORMALIZE RAIN-SOURCE BREAKOWN VOLTAGE I = 5µA , UNCTION TEMPERATURE ( C) Figure 7. Breakdown Volage Variaion wih Temperaure I, REVERSE RAIN CURRENT (A) V = V T = 5 C 5 C -55 C V S, BOY IOE FORWAR VOLTAGE (V) Figure 8. Body iode Forward Volage Variaion wih Curren and Temperaure 5 CAPACITANCE (pf) 5 5 f = MHz V = V C iss C oss C rss V, GATE-SOURCE VOLTAGE (V) I = 7.5A V = V S 48V 4V V, RAIN TO SOURCE VOLTAGE (V) S Figure 9. Capaciance Characerisics Q g, GATE CHARGE (nc) Figure. Gae Charge Characerisics V d(on) on r d(off) off f V IN R L 9% 9% V OUT V GEN R GEN G UT V OUT % 9% % INVERTE R S V IN % 5% 5% PULSE WITH Figure. Swiching Tes Circui Figure. Swiching Waveforms NP45L Rev. B / NB45L Rev. C

6 Typical Elecrical Characerisics (coninued) g, TRANSCONUCTANCE (SIEMENS) FS V S = V T = -55 C 5 C 5 C I, RAIN CURRENT (A) I, RAIN CURRENT (A) RS(ON) LIMIT V = V SINGLE PULSE o R θc = 3 C/W T C = 5 C 5ms C ms ms us V S, RAIN-SOURCE VOLTAGE (V) Figure 3. Transconducance Variaion wih rain Curren and Temperaure Figure 4. Maximum Safe Operaing Area r(), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE =.5 Single Pulse R θc () = r() * R θc R = 3. C/W θc - T = P * R () C θc uy Cycle, = / ,TIME P(pk) Figure 5. Transien Thermal Response Curve NP45L Rev. B / NB45L Rev. C