TELUX LED FEATURES APPLICATIONS WAVELENGTH. (ma) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.

Size: px
Start display at page:

Download "TELUX LED FEATURES APPLICATIONS WAVELENGTH. (ma) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX."

Transcription

1 TELUX LED DESCRIPTION 9232 The TELUX series is a clear, non-diffused LED for applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed AllnGaP technology. The supreme heat dissipation of TELUX allows applications at high ambient temperatures. All packing units are binned for luminous flux, forward voltage, and color to achieve the most homogenous light appearance in application. SAE and ECE color requirements for automobile application are available for color red. PRODUCT GROUP AND PACKAGE DATA Product group: LED Package: TELUX Product series: standard Angle of half intensity: ± 3 FEATURES High luminous flux Supreme heat dissipation: R thjp is 9 K/W High operating temperature: T amb = -4 C to + C Meets SAE and ECE color requirements for the automobile industry for color red Packed in tubes for automatic insertion Luminous flux, forward voltage, and color categorized for each tube Small mechanical tolerances allow precise usage of external reflectors or lightguides Compatible with wave solder processes according to CECC 82 and J-STD-2 ESD-withstand voltage: up to 2 kv according to JESD22-A4-B AEC-Q qualified Material categorization: for definitions of compliance please see APPLICATIONS Exterior lighting Dashboard illumination Tail-, stop-, and turn signals of motor vehicles Replaces small incandescent lamps Traffic signals and signs PARTS TABLE PART COLOR LUMINOUS FLUX WAVELENGTH FORWARD VOLTAGE (mlm) at (nm) at (V) at (ma) (ma) (ma) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX. TECHNOLOGY TLWR76 Red AlInGaP on GaAs TLWY76 Yellow AlInGaP on GaAs ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage () I R = μa V R V DC forward current T amb 85 C 7 ma Surge forward current t p μs SM A Power dissipation P V 87 mw Junction temperature T j 25 C Operating temperature range T amb -4 to + C Storage temperature range T stg -55 to + C Soldering temperature t 5 s,.5 mm from body preheat temperature C / 3 s T sd 26 C Thermal resistance junction / ambient With cathode heatsink of 7 mm 2 R thja 2 K/W Thermal resistance junction / pin R thjp 9 K/W Note () Driving the LED in reverse direction is suitable for a short term application Rev. 3.2, 7-Oct-5 Document Number: 8338

2 OPTICAL AND ELECTRICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) TLWR76, RED PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Total flux = 7 ma, R thja = 2 K/W φ V mlm Luminous intensity/total flux = 7 ma, R thja = 2 K/W I V /φ V mcd/mlm Dominant wavelength = 7 ma, R thja = 2 K/W λ d nm Peak wavelength = 7 ma, R thja = 2 K/W λ p nm Angle of half intensity = 7 ma, R thja = 2 K/W ϕ - ± 3 - deg Total included angle 9 % of total flux captured ϕ.9 V deg Forward voltage = 7 ma, R thja = 2 K/W V F V Reverse voltage I R = μa V R 2 - V Junction capacitance V R = V, f = MHz C j pf Temperature coefficient of λ dom = 5 ma T C λ dom nm/k OPTICAL AND ELECTRICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) TLWY76, YELLOW PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Total flux = 7 ma, R thja = 2 K/W φ V 28 - mlm Luminous intensity/total flux = 7 ma, R thja = 2 K/W I V /φ V mcd/mlm Dominant wavelength = 7 ma, R thja = 2 K/W λ d nm Peak wavelength = 7 ma, R thja = 2 K/W λ p nm Angle of half intensity = 7 ma, R thja = 2 K/W ϕ - ± 3 - deg Total included angle 9 % of total flux captured ϕ.9 V deg Forward voltage = 7 ma, R thja = 2 K/W V F V Reverse voltage I R = μa V R 5 - V Junction capacitance V R = V, f = MHz C j pf Temperature coefficient of λ dom = 5 ma T C λ dom -. - nm/k LUMINOUS FLUX CLASSIFICATION GROUP LUMINOUS FLUX (mlm) STANDARD MIN. MAX. B 8 C 5 24 D 2 3 E F 3 42 G H 4 6 I 5 73 Note Luminous flux is tested at a current pulse duration of 25 ms and an accuracy of ± %. The above type numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each tube (there will be no mixing of two groups on each tube). In order to ensure availability, single brightness groups will not be orderable. In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped in any one tube. In order to ensure availability, single wavelength groups will not be orderable. COLOR CLASSIFICATION DOM. WAVELENGTH (nm) GROUP YELLOW RED MIN. MAX. MIN. MAX Note Wavelengths are tested at a current pulse duration of 25 ms and an accuracy of ± nm. Rev. 3.2, 7-Oct-5 2 Document Number: 8338

3 FORWARD VOLTAGE CLASSIFICATION GROUP FORWARD VOLTAGE (V) MIN. MAX. Y Z Note Voltages are tested at a current pulse duration of ms. TLWR76 D 2 Type Luminous Flux Color Group Forward Voltage lm to 3. lm 2.9 V to 2.43 V 64 nm to 622 nm TYPICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) red, yellow R thja = 2 K/W I V rel. - Relative Luminous Intensity ϕ - Angular Displacement T amb - Ambient Temperature ( C) Fig. - Forward Current vs. Ambient Temperature Fig. 3 - Relative Luminous Intensity vs. Angular Displacement 82 red, yellow t p /T = t p - Pulse Length (ms) T amb 85 C. Fig. 2 - Forward Current vs. Pulse Length I rel. - Relative Luminous Intensity red λ- Wavelength (nm) Fig. 4 - Relative Intensity vs. Wavelength Rev. 3.2, 7-Oct-5 3 Document Number: 8338

4 I V rel. - Relative Luminous Intensity yellow I V rel - Relative Luminous Intensity.. red λ - Wavelength (nm) Fig. 5 - Relative Intensity vs. Wavelength Fig. 8 - Relative Luminous Intensity vs. Forward Current 9 red V F - Forward Voltage (V) I V rel - Relative Luminous Intensity yellow Fig. 6 - Forward Current vs. Forward Voltage Fig. 9 - Relative Luminous Intensity vs. Forward Current 9 yellow V F - Forward Voltage (V) I Spec - Specific Luminous Flux red Fig. 7 - Forward Current vs. Forward Voltage Fig. - Specific Luminous Flux vs. Forward Current Rev. 3.2, 7-Oct-5 4 Document Number: 8338

5 23 I Spec - Specific Luminous Flux yellow R thja (K/W) Padsize 8 mm 2 per anode pin Fig. - Specific Luminous Flux vs. Forward Current Cathode Padsize (mm 2 ) Fig. 4 - Thermal Resistance Junction Ambient vs. Cathode Padsize - Relative Luminous Flux Φ V rel.8.6 red = 7 ma T amb - Ambient Temperature ( C) Fig. 2 - Relative Luminous Flux vs. Ambient Temperature Total Luminous Flux (%) Total Included Angle (Degrees) Fig. 5 - Percentage Total Luminous Flux vs. Total Included Angle for 9 Emission Angle - Relative Luminous Flux V rel Φ 2..8 yellow = 7 ma T amb - Ambient Temperature ( C) Fig. 3 - Relative Luminous Flux vs. Ambient Temperature Rev. 3.2, 7-Oct-5 5 Document Number: 8338

6 PACKAGE DIMENSIONS in millimeters C Cathode marking Area not plane technical drawings according to DIN specifications 5 A.6 R.22 R 7.75 ±.3.76 ±..55 ± ± ± ± ± ±.3.6 max..4 ±. 5.8 ± ±.3 Drawing-No.: Issue: 4; Rev. 3.2, 7-Oct-5 6 Document Number: 8338

7 FAN FOLD BOX DIMENSIONS in millimeters Label 45 6 Label 649 LABEL OF FAN FOLD BOX (example) 6 A H VISHAY 37 A B C D E F G 2228 A. Type of component B. Manufacturing plant C. SEL - selection code (bin): e.g.: A = code for luminous intensity group 4 = code for color group D. Date code year / week E. Day code (e.g. 4: Thursday, A: early shift) F. Batch: no. G. Total quantity H. Company code EXAMPLE FOR TELUX TUBE LABEL DIMENSIONS in millimeters 9 52 A TLWR76 PTC27 SELB DC22 BN2345 PCS7 MNO 8 A. Bar code B. Type of component C. Manufacturing plant D. SEL - selection code (bin): digit - code for luminous flux group digit 2 - code for dominant wavelength group digit 3 - code for forward voltage group E. Date code F. Batch: no. G. Total quantity H. Company code B C D E F G H 649 Rev. 3.2, 7-Oct-5 7 Document Number: 8338

8 TUBE WITH BAR CODE LABEL DIMENSIONS in millimeters Drawing-No.: Rev. 2; Date: Drawing Proportions not Scaled Rev. 3.2, 7-Oct-5 8 Document Number: 8338

9 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9

TELUX LED FEATURES. COLOR TEMPERATURE FORWARD VOLTAGE (mlm) at I F (V)

TELUX LED FEATURES. COLOR TEMPERATURE FORWARD VOLTAGE (mlm) at I F (V) 16 012 DESCRIPTION The TELUX series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing

More information

TELUX LED FEATURES APPLICATIONS COORDINATE. FORWARD VOLTAGE (V) (ma) at I F (ma) (ma) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX. 0.33, 0.

TELUX LED FEATURES APPLICATIONS COORDINATE. FORWARD VOLTAGE (V) (ma) at I F (ma) (ma) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX. 0.33, 0. TELUX LED DESCRIPTION The TELUX series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing

More information

TELUX LED FEATURES APPLICATIONS WAVELENGTH

TELUX LED FEATURES APPLICATIONS WAVELENGTH TELUX LED DESCRIPTION 19232 The is a clear, non diffused LED for applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed

More information

TLWR9.2. TELUX. Vishay Semiconductors

TLWR9.2. TELUX. Vishay Semiconductors TELUX Description The TELUX series is a clear, non diffused LED for applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly

More information

Color Type Technology

Color Type Technology TELUX LED Color Type Technology Angle of Half Intensity ± Red TLWR76.. AlInGaP on GaAs Yellow TLWY76.. AlInGaP on GaAs Softorange TLWO76.. AlInGaP on GaAs True Green TLWTG76.. InGaN on SiC 3 Blue Green

More information

Silicon PIN Photodiode

Silicon PIN Photodiode VEMD550CF Silicon PIN Photodiode DESCRIPTION VEMD550CF is a high speed and high sensitive PIN photodiode. It is a low profile surface-mount device (SMD) including the chip with a 7.5 mm 2 sensitive area

More information

Silicon PIN Photodiode, RoHS Compliant

Silicon PIN Photodiode, RoHS Compliant Silicon PIN Photodiode, RoHS Compliant DESCRIPTION 948642 is a high sensitive silicon planar photodiode in a standard TO-18 hermetically sealed metal case with a glass lens. A precise alignment of the

More information

Silicon PIN Photodiode

Silicon PIN Photodiode Silicon PIN Photodiode DESCRIPTION is a high speed and high sensitive PIN photodiode with enhanced sensitivity for visible light. It is a low profile surface-mount device (SMD) including the chip with

More information

Small Signal Fast Switching Diode

Small Signal Fast Switching Diode Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial

More information

High Brightness LED Power Module

High Brightness LED Power Module High Brightness LED Power Module Vishay Semiconductors 22139 22140 DESCRIPTION The VLSL41xxA are metal core based high brightness LED power modules, assembled with 12, 24 or 3 HB white LEDs. The color

More information

High Brightness LED Power Module

High Brightness LED Power Module High Brightness LED Power Module 22139 22438 DESCRIPTION VLPC0303A2, and VLPW0303A2 are metal core based high brightness LED power modules assembled with 9 HB white LEDs. VLPC0303A2 is a cool white version

More information

Small Signal Fast Switching Diode FEATURES

Small Signal Fast Switching Diode FEATURES Small Signal Fast Switching Diode MARKING (example only) Bar = cathode marking XY = type code X Y 6 DESIGN SUPPORT TOOLS click logo to get started FEATURES Silicon epitaxial planar diode Fast switching

More information

High Brightness LED Power Module

High Brightness LED Power Module High Brightness LED Power Module VLSL3112A2, VLSL3124A2 Vishay Semiconductors 22454 22139 DESCRIPTION The VLSL3112A2, VLSL3124A2 are metal core based high brightness LED power modules, assembled with 12

More information

Small Signal Zener Diodes

Small Signal Zener Diodes Small Signal Zener Diodes DESIGN SUPPORT TOOLS click logo to get started FEATURES Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise

More information

Small Signal Fast Switching Diode

Small Signal Fast Switching Diode Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- FL Weight: approx. 9. mg Packaging codes/options: 08/K per 7" reel (8 mm tape), 8K/box FEATURES Silicon epitaxial planar diode Fast switching

More information

Power SMD LED PLCC-2 Plus

Power SMD LED PLCC-2 Plus Power SMD LED PLCC-2 Plus DESCRIPTION 2268 The VLMR51.., VLMK51.., and VLMY51.. LED series in PLCC2 plus package are an advanced product in terms of high luminous flux and low thermal resistance. In combination

More information

Small Signal Fast Switching Diode

Small Signal Fast Switching Diode Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial

More information

Silicon PIN Photodiode

Silicon PIN Photodiode Silicon PIN Photodiode DESCRIPTION VBPW34S VBPW34SR 21733 VBPW34S and VBPW34SR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a 7.5 mm 2 sensitive

More information

Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS

Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS Small Signal Fast Switching Diode MARKING (example only) Bar = cathode marking XY = type code X Y 6 MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box

More information

Zener Diodes FEATURES APPLICATIONS

Zener Diodes FEATURES APPLICATIONS Zener Diodes SMA (DO-4AC) PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom. 3.3 to 00 V Test current I ZT.7 to 80 ma V BR 5. to 95 V V WM 4.7 to 90 V P PPM 40 W T J max. 50 C V Z specification

More information

Small Signal Zener Diodes, Dual

Small Signal Zener Diodes, Dual Small Signal Zener Diodes, Dual DESIGN SUPPORT TOOLS Models Available PRIMARY CHARACTERISTICS 6 PARAMETER VALUE UNIT range nom.. to V Test current T specification Pulse current Circuit configuration Dual

More information

Small Signal Zener Diodes

Small Signal Zener Diodes Small Signal Zener Diodes PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom. 2.4 to 75 V FEATURES Very sharp reverse characteristic Low reverse current level Very high stability Low noise TZMC-

More information

Small Signal Zener Diodes, Dual

Small Signal Zener Diodes, Dual DZ-G Series Small Signal Zener Diodes, Dual PRIMARY CHARACTERISTICS PARAMETER ALUE UNIT range nom.. to Test current T specification Pulse current Int. construction Dual common cathode FEATURES Dual silicon

More information

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.53 V at I F = 5.0 A 2 TMBS esmp Series Top View PIN PIN 2 PRIMARY CHARACTERISTICS K Bottom View I F(AV) 2 x A V RRM 0 V I FSM 50

More information

Filter Inductors, High Current, Radial Leaded

Filter Inductors, High Current, Radial Leaded Filter Inductors, High Current, Radial Leaded ELECTRICAL SPECIFICATIONS Inductance: Measured at 1.0 V with zero DC current Dielectric: 2500 V RMS between winding and 0.250" [6.35 mm] of insulating covering

More information

Small Signal Schottky Diode FlipKY Gen 2

Small Signal Schottky Diode FlipKY Gen 2 Small Signal Schottky Diode FlipKY Gen 2 MECHNICL DT Case: CLP0603-2M X FETURES Schottky diode for high-speed switching Very low dimensions: 0.6 mm x 0.3 mm x 0.29 mm 0.2 forward current Low forward voltage

More information

4-Line BUS-Port ESD-Protection

4-Line BUS-Port ESD-Protection 4-Line BUS-Port ESD-Protection 2397 6 5 4 1 2 3 MARKING (example only) Dot = Pin 1 marking XX = Date code YY = Type code (see table below) 2453 1 XX YY 211 FEATURES Ultra compact LLP75-6L package 4-line

More information

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier VP0 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.43 V at I F = 5 A TMBS esmp Series TO-77A (SMPC) Anode Cathode Anode FEATURES Very low profile - typical height

More information

Small Signal Zener Diodes

Small Signal Zener Diodes Small Signal Zener Diodes PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom. 2.4 to 75 V Test current I ZT 2.5; 5 ma V Z specification Pulse current Int. construction Single FEATURES Saving space

More information

Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance

Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance FEATURES Long useful life: up to 5000 h at 105 C Very low ESR and highest ripple current SMD-version with base plate, lead (Pb) free reflow

More information

Aluminum Electrolytic Capacitors Power Long Life Snap-In

Aluminum Electrolytic Capacitors Power Long Life Snap-In Aluminum Electrolytic Capacitors Power Long Life Snap-In PUL-SI smaller dimensions 0/0 PLL-SI Fig. QUICK REFERENCE DATA DESCRIPTION VALUE 0 0 Nominal case sizes (Ø D x L in mm) x to x 0 Rated capacitance

More information

Aluminum Capacitors FEATURES APPLICATIONS PACKAGING

Aluminum Capacitors FEATURES APPLICATIONS PACKAGING Aluminum Capacitors QUICK REFERENCE DATA DESCRIPTION VALUE Nominal case size (Ø D x L in mm) 4 x 5.3 to 12.5 x 13.5 Rated capacitance range, 10 μf to 2200 μf Capacitance tolerance ± 20 % Rated voltage

More information

Zener Diodes FEATURES APPLICATIONS. MINIMUM ORDER QUANTITY BZX85-series BZX85-series-TR 5000 (52 mm tape on 13" reel) /box

Zener Diodes FEATURES APPLICATIONS. MINIMUM ORDER QUANTITY BZX85-series BZX85-series-TR 5000 (52 mm tape on 13 reel) /box Zener Diodes PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom.. to V Test current I ZT. to 8 ma V Z specification Pulse current Int. construction Single FEATURES Silicon planar power Zener diodes

More information

FEATURES. Heatsink. 1 2 Pin 1 Pin 2

FEATURES. Heatsink. 1 2 Pin 1 Pin 2 Ultralow V F Ultrafast Rectifier, 8 A FRED Pt esmp Series 2 SlimDPAK (TO-252AE) k Heatsink k 2 Pin Pin 2 FEATURES Ultrafast recovery time, extremely low V F and soft recovery For PFC CCM operation Low

More information

Aluminum Capacitors FEATURES APPLICATIONS PACKAGING

Aluminum Capacitors FEATURES APPLICATIONS PACKAGING Aluminum Capacitors FEATURES Load life: 2000 h at 105 C Extra low impedance, high ripple current Polarized SMD aluminum electrolytic capacitors, non solid electrolyte Material categorization: for definitions

More information

Aluminum Electrolytic Capacitors Power Standard Miniature Snap-In

Aluminum Electrolytic Capacitors Power Standard Miniature Snap-In Aluminum Electrolytic Capacitors Power Standard Miniature Snap-In Fig. QUICK REFERENCE DATA DESCRIPTION / PUM-SI smaller dimensions 0/0 PSM-SI long life 0 C Note () A 0 V range is available on request

More information

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.3 V at I F = 5.0 A 2 TMBS esmp Series SMPD (TO-263AC) Top View PIN PIN 2 K K Bottom View HEATSINK FEATURES Trench MOS Schottky technology

More information

Aluminum Electrolytic Capacitors Axial High Temperature High Voltage for E.L.B.

Aluminum Electrolytic Capacitors Axial High Temperature High Voltage for E.L.B. Aluminum Electrolytic Capacitors Axial High Temperature High Voltage for E.L.B. 04-043 ASH standard 04/043 AHH-ELB 550 V/4 h Fig. 85 C 04/043 AMH-ELB 550 V/4 h FEATURES Useful life: 0 000 h at 05 C Stable

More information

Automotive N- and P-Channel 100 V (D-S) 175 C MOSFET

Automotive N- and P-Channel 100 V (D-S) 175 C MOSFET SQJ57EP Automotive N- and P-Channel V (D-S) 75 C MOSFET PRODUCT SUMMARY N-CHANNEL P-CHANNEL V DS (V) - R DS(on) ( ) at V GS = ± V.45 46 R DS(on) ( ) at V GS = ± 4.5 V.58.265 I D (A) 5-9.5 Configuration

More information

Aluminum Electrolytic Capacitors Radial, Enhanced High Temperature, Low Impedance

Aluminum Electrolytic Capacitors Radial, Enhanced High Temperature, Low Impedance Aluminum Electrolytic Capacitors Radial, Enhanced High Temperature, Low Impedance 40 RTM lower Z longer life 25 C 50 C 50 RMI 46 RTI Fig. QUICK REFERENCE DATA DESCRIPTION VALUE Nominal case sizes (Ø D

More information

Aluminum Electrolytic Capacitors Radial Miniature, Low Impedance

Aluminum Electrolytic Capacitors Radial Miniature, Low Impedance Aluminum Electrolytic Capacitors Radial Miniature, Low Impedance 36 RVI miniaturize FEATURES Very long useful life: 4000 h to 0 000 h at 05 C, high stability, high reliability Very low impedance and low

More information

Hyperfast Rectifier, 8 A FRED Pt

Hyperfast Rectifier, 8 A FRED Pt Hyperfast Rectifier, 8 A FRED Pt L TO-0 FullPAK Cathode Anode PRIMARY CHARACTERISTICS I F(AV) 8 A V R 600 V V F at I F.3 V t rr typ. 8 ns T J max. 75 C Package L TO-0 FullPAK Circuit configuration Single

More information

High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0. V at I F = A FEATURES Trench MOS Schottky technology Available 8 Low forward voltage drop, low power losses High

More information

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V F = 0.3 V at I F = 5 A TMBS esmp Series FEATURES Trench MOS Schottky technology Very low profile - typical height of.7

More information

VLMW712U2U3XV, VLMW712T3U3US, VLMW712T2T3QN

VLMW712U2U3XV, VLMW712T3U3US, VLMW712T2T3QN Little Star 1 W Power SMD LED White 20784-1 DESCRIPTION The VLMW712U2U3XV, VLMW712T3U3US, and VLMW712T2T3QN rank among the most robust and light efficient LEDs in the market. Using recent and reliable

More information

V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier

V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3   High Voltage Trench MOS Barrier Schottky Rectifier V200S-E3, VF200S-E3, VB200S-E3, VI200S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.446 V at I F = 5 A TO-220AB TMBS ITO-220AB FEATURES Trench MOS Schottky technology Low forward

More information

Automotive N- and P-Channel 40 V (D-S) 175 C MOSFET

Automotive N- and P-Channel 40 V (D-S) 175 C MOSFET SQJ54EP Automotive N- and P-Channel 4 V (D-S) 75 C MOSFET 6.5 mm mm PowerPAK SO-8L Dual 5.3 mm D D 4 G 3 S G S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization:

More information

Power SMD LED PLCC2 Plus

Power SMD LED PLCC2 Plus Power SMD LED PLCC2 Plus DESCRIPTION 2268 The VLMR51.., VLMK51.., and VLMY51.. LED series in PLCC2 plus package are an advanced product in terms of high luminous flux and low thermal resistance. In combination

More information

Optocoupler with Transistor Output

Optocoupler with Transistor Output Optocoupler with Transistor Output 17197_4 DESCRIPTION The HS817 series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package.

More information

Optocoupler, Phototransistor Output, LSOP-4, 110 C Rated, Long Mini-Flat Package

Optocoupler, Phototransistor Output, LSOP-4, 110 C Rated, Long Mini-Flat Package TCLT11. Series Optocoupler, Phototransistor Output, LSOP-4, 11 C Rated, Long Mini-Flat Package 17295-5 DESCRIPTION The TCLT11. series consists of a phototransistor optically coupled to a gallium arsenide

More information

Aluminum Electrolytic Capacitors Axial Standard

Aluminum Electrolytic Capacitors Axial Standard 00/0 AS Aluminum Electrolytic Capacitors Axial Standard 04/04 ASH high voltage 00/0 AS smaller dimensions 0 ASM Fig. QUICK REFERENCE DATA DESCRIPTION VALUE Nominal case sizes (Ø D x L in mm) 4.5 x 0 to

More information

Silicon PIN Photodiode

Silicon PIN Photodiode TEMD5080X01 DESCRIPTION 20535 TEMD5080X01 is a PIN photodiode with enhanced blue sensitivity. The miniature surface mount package (SMD) include a chip with 7.7 mm 2 sensitive area, covered by clear epoxy.

More information

Single Phase Fast Recovery Bridge (Power Modules), 61 A

Single Phase Fast Recovery Bridge (Power Modules), 61 A VS-SA6BA60 Single Phase Fast Recovery Bridge (Power Modules), 6 A SOT-227 PRIMARY CHARACTERISTICS V RRM 600 V I O 6 A t rr 70 ns Type Modules - Bridge, Fast Package SOT-227 Circuit configuration Single

More information

V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier

V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3   High Voltage Trench MOS Barrier Schottky Rectifier V3000S-E3, VF3000S-E3, VB3000S-E3, VI3000S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.39 V at I F = 5 A TO-220AB TMBS ITO-220AB FEATURES Trench MOS Schottky technology Low

More information

Aluminum Capacitors SMD (Chip) Long Life Vertical

Aluminum Capacitors SMD (Chip) Long Life Vertical Not for New Designs - Alternative Device: 53 CRV 53 CLV 40 CLH FEATURES Polarized aluminum electrolytic capacitors, non-solid electrolyte, self healing SMD-version with base plate, vertical construction

More information

Small Signal Zener Diodes

Small Signal Zener Diodes BZT-G-Series Small Signal Zener Diodes PRIMARY CHARACTERISTICS PARAMETER ALUE UNIT FEATURES Silicon planar power Zener diodes The Zener voltages are graded according to the international E standard AEC-Q

More information

Power Resistor Thick Film Technology

Power Resistor Thick Film Technology Power Resistor Thick Film Technology LTO series are the extension of RTO types. We used the direct ceramic mounting design (no metal tab) of our RCH power resistors applied to semiconductor packages. FEATURES

More information

Silicon PIN Photodiode

Silicon PIN Photodiode TEMD7000X0 284 DESCRIPTION TEMD7000X0 is a high speed and high sensitive PIN photodiode. It is a miniature surface mount device (SMD) including the chip with a 0.23 mm 2 sensitive area detecting visible

More information

Aluminum Electrolytic Capacitors SMD (Chip), High Temperature, Low Impedance High Vibration Capability

Aluminum Electrolytic Capacitors SMD (Chip), High Temperature, Low Impedance High Vibration Capability Aluminum Electrolytic Capacitors SMD (Chip), High Temperature, Low Impedance High Vibration Capability FEATURES Useful life: up to 2000 h at 50 C High reliability Low ESR Polarized aluminum electrolytic

More information

Small Signal Zener Diodes

Small Signal Zener Diodes Small Signal Zener Diodes FEATURES Very sharp reverse characteristic Low reverse current level Very high stability Low noise AEC-Q qualified Compliant to RoHS Directive 22/95/EC and in accordance to WEEE

More information

SMD Aluminum Solid Capacitors with Conductive Polymer

SMD Aluminum Solid Capacitors with Conductive Polymer SMD Aluminum Solid Capacitors with Conductive Polymer FEATURES New OS-CON series provides improved characteristics with up to 25 C temperature capability and 35 V maximum voltage rating in a SMD package

More information

MOC8101, MOC8102, MOC8103, MOC8104, MOC8105 Optocoupler, Phototransistor Output, no Base Connection

MOC8101, MOC8102, MOC8103, MOC8104, MOC8105  Optocoupler, Phototransistor Output, no Base Connection MOC80, MOC80, MOC803, MOC80, MOC80 Optocoupler, Phototransistor Output, no Base Connection i79009- DESCRIPTION The MOC80, MOC80, MOC803, MOC80, MOC80 family optocoupler consisting of a gallium arsenide

More information

Complementary (N- and P-Channel) MOSFET

Complementary (N- and P-Channel) MOSFET Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS

More information

Hyperfast Rectifier, 1 A FRED Pt

Hyperfast Rectifier, 1 A FRED Pt Hyperfast Rectifier, 1 A FRED Pt SMF (DO-219AB) Cathode Anode FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 17 C maximum operating junction temperature Low forward voltage drop Low

More information

Aluminum Capacitors SMD (Chip), High Temperature

Aluminum Capacitors SMD (Chip), High Temperature Not Recommended for New Designs, Use 50 CR Aluminum Capacitors SMD (Chip), High Temperature 50 CL 53 CRV Lead (Pb)-free 40 CLH 5 C high temperature 53 CLV Fig. low 50 CL QUICK REFERENCE DATA DESCRIPTION

More information

Optocoupler, Phototransistor Output, Single Channel, Half Pitch Mini-Flat Package

Optocoupler, Phototransistor Output, Single Channel, Half Pitch Mini-Flat Package TCMT11. Series Optocoupler, Phototransistor Output, Single Channel, Half Pitch Mini-Flat Package 22628-1 C E 4 3 1 2 DESCRIPTION The TCMT11. series consist of a phototransistor optically coupled to a gallium

More information

RF Power Plate Capacitors for Higher Voltages, Class 1 Ceramic

RF Power Plate Capacitors for Higher Voltages, Class 1 Ceramic RF Power Plate Capacitors for Higher Voltages, Class Ceramic FEATURES Low losses High reliability High voltage ratings APPLICATIONS These high quality power plate capacitors are designed for usage in high

More information

Small Signal Zener Diodes

Small Signal Zener Diodes BZT-Series Small Signal Zener Diodes PRIMARY CHARACTERISTICS PARAMETER ALUE UNIT range nom.. to Test current T.; ma specification Pulse current Int. construction Single FEATURES Silicon planar Zener diodes

More information

Aluminum Electrolytic Capacitors SMD (Chip), High Temperature, Low Impedance, High Vibration Capability

Aluminum Electrolytic Capacitors SMD (Chip), High Temperature, Low Impedance, High Vibration Capability Aluminum Electrolytic Capacitors SMD (Chip), High Temperature, Low Impedance, High Vibration Capability FEATURES Extended useful life: up to 6000 h at 25 C Polarized aluminum electrolytic capacitors, non-solid

More information

Aluminum Capacitors Power Printed Wiring Style

Aluminum Capacitors Power Printed Wiring Style FEATURES Polarized aluminum electrolytic capacitors, non-solid electrolyte Large types, cylindrical aluminum case, insulated Provided with keyed polarity Very long useful life: 000 h at 8 C Low ESR, high

More information

High Voltage Trench MOS Barrier Schottky Rectifier

High Voltage Trench MOS Barrier Schottky Rectifier High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.50 V at I F = 5 A TO-220AB DESIGN SUPPORT TOOLS Models Available PIN PIN 3 NC A V2000SG PRIMARY CHARACTERISTICS I F(AV) 20 A V RRM 00

More information

Small Signal Zener Diodes, Dual

Small Signal Zener Diodes, Dual DZ-V-G Series Small Signal Zener Diodes, Dual PRIMERY CHARACTERISTICS PARAMETER VALUE UNIT range nom.. to V Test current T specification Pulse current FEATURES Dual silicon planar Zener diodes, common

More information

Aluminum Electrolytic Capacitors Power Economic Printed Wiring

Aluminum Electrolytic Capacitors Power Economic Printed Wiring Aluminum Electrolytic Capacitors Power Economic Printed Wiring 0/0 PECPW 00/0 PEDPW Fig. QUICK REFERENCE DATA DESCRIPTION high ripple current 0/0 PECPW long life 0 C Nominal case size (Ø D x L in mm) Rated

More information

Small Signal Zener Diodes

Small Signal Zener Diodes Small Signal Zener Diodes BZX8-G-Series PRIMARY CHARACTERISTICS PARAMETER ALUE UNIT range nom.. to Test current T ; specification Pulse current Int. construction Single FEATURES Silicon planar Zener diodes

More information

Aluminum Electrolytic Capacitors SMD (Chip) Long Life Vertical

Aluminum Electrolytic Capacitors SMD (Chip) Long Life Vertical Aluminum Electrolytic Capacitors SMD (Chip) Long Life Vertical FEATURES Polarized aluminum electrolytic capacitors, non-solid electrolyte, self healing SMD-version with base plate, vertical construction

More information

Aluminum Electrolytic Capacitors Axial Miniature, Long-Life

Aluminum Electrolytic Capacitors Axial Miniature, Long-Life Aluminum Electrolytic Capacitors Axial Miniature, Long-Life 38 AML 0 ASM smaller dimensions Fig. QUICK REFERENCE DATA DESCRIPTION Nominal case sizes (Ø D x L in mm) 6.3 x.7 to 0 x 5 VALUE 0 x 30 to x 38

More information

Aluminum Electrolytic Capacitors SMD (Chip), Very Low Z, High Vibration Capability

Aluminum Electrolytic Capacitors SMD (Chip), Very Low Z, High Vibration Capability Aluminum Electrolytic Capacitors SMD (Chip), Very Low Z, High Vibration Capability FEATURES Extended useful life: up to 0 000 h at 05 C Polarized aluminum electrolytic capacitors, non-solid electrolyte,

More information

Optocoupler, Phototransistor Output, no Base Connection

Optocoupler, Phototransistor Output, no Base Connection Optocoupler, Phototransistor Output, no Base Connection FEATURES A C NC 1 2 3 6 5 4 NC C E Isolation test voltage, 5 V RMS No base terminal connection for improved common mode interface immunity Long term

More information

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET N-Channel 6 V (-S) MOSFET SiA6J 2. mm Top View PowerPAK SC-7-6L Single 2. mm 2 3 G Bottom View PROUCT SUMMARY V S (V) 6 R S(on) max. () at V GS = V.8 R S(on) max. () at V GS = 7. V.22 Q g typ. (nc) 6.9

More information

Two-Line ESD Protection in SOT-23

Two-Line ESD Protection in SOT-23 Two-Line ESD Protection in 2 3 20456 MARKING (example only) YYY = type code (see table below) XX = date code 1 XX YYY XX 20512 20357 1 FEATURES Two-line ESD-protection device ESD-protection acc. IEC 61000-4-2

More information

Aluminum Electrolytic Capacitors Radial Miniature Long Life

Aluminum Electrolytic Capacitors Radial Miniature Long Life Aluminum Electrolytic Capacitors Radial Miniature Long Life 6 RLL lower CV-values RMH high voltage longer life 6 RVI miniaturized 0 RMI lower miniaturized 8 RUS Fig. QUICK REFERENCE DATA DESCRIPTION VALUE

More information

Solid Tantalum Chip Capacitors, TANTAMOUNT, Conformal Coated, Maximum CV, Low ESR

Solid Tantalum Chip Capacitors, TANTAMOUNT, Conformal Coated, Maximum CV, Low ESR Solid Tantalum Chip Capacitors, TANTAMOUNT, Conformal Coated, Maximum CV, Low FEATURES Large capacitance rating range Mounting: Surface mount Lowest for a surface mount tantalum chip capacitor Terminations:

More information

Aluminum Capacitors Power Standard Miniature Snap-In

Aluminum Capacitors Power Standard Miniature Snap-In Aluminum Capacitors Power Standard Miniature Snap-In Fig. QUICK REFERENCE DATA DESCRIPTION / PUM-SI smaller dimensions 0/0 PSM-SI long life 0 C Note () A 0 V range is available on request 0/0 PLL-SI VALUE

More information

RF Power Feed-Through Capacitors with Conductor Rod, Class 1 Ceramic

RF Power Feed-Through Capacitors with Conductor Rod, Class 1 Ceramic DB 06030, DB 06040, DB 06060 RF Power Feed-Through Capacitors with Conductor Rod, Class Ceramic FEATURES Small size Geometry minimizes inductance Wide range of capacitance values APPLICATIONS Filtering

More information

Surface Mount Power Resistor Thick Film Technology

Surface Mount Power Resistor Thick Film Technology Surface Mount Power Resistor Thick Film Technology DESIGN SUPPORT TOOLS click logo to get started Models Available FEATURES AEC-Q200 qualified 35 W at 25 C case temperature Surface mounted resistor - TO-263

More information

Parameter Test condition Symbol Value Unit. Mounted on epoxy-glass hard tissue, fig µm copper clad, 0.9 mm 2 copper area per electrode

Parameter Test condition Symbol Value Unit. Mounted on epoxy-glass hard tissue, fig µm copper clad, 0.9 mm 2 copper area per electrode Small Signal Zener Diodes Features Saving space Hermetic sealed parts Electrical data identical with the devices BZT55..Series/TZM..Series Fits onto SOD-323/SOD- footprints Very sharp reverse characteristic

More information

N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET N-Channel V (-S) MOSFET SiS6ENT 3.3 mm mm Top View PowerPAK -8S 3.3 mm 3 4 S G Bottom View PROUCT SUMMARY V S (V) R S(on) max. () at V GS = 4.5 V.39 R S(on) max. () at V GS = 3.7 V.4 R S(on) max. () at

More information

Aluminum Electrolytic Capacitors Power Long Life Snap-In

Aluminum Electrolytic Capacitors Power Long Life Snap-In Aluminum Electrolytic Capacitors Power Long Life Snap-In PUL-SI smaller dimensions 0/0 PLL-SI Fig. QUICK REFERENCE DATA DESCRIPTION VALUE 0 0 Nominal case sizes (Ø D x L in mm) x to x 0 Rated capacitance

More information

50 W Power Resistor, Thick Film Technology, TO-220

50 W Power Resistor, Thick Film Technology, TO-220 50 W Power Resistor, Thick Film Technology, TO-220 DESIGN SUPPORT TOOLS click logo to get started FEATURES 50 W at 25 C heatsink mounted Adjusted by sand trimming Leaded or surface mount versions High

More information

Powered-off Protection, 1, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Powered-off Protection, 1, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer) DGE Powered-off Protection,,.8 V to 5.5 V, SPDT Analog Switch (: Multiplexer) DESCRIPTION The DGE is a high performance single-pole, double-throw (SPDT) analog switch designed for.8 V to 5.5 V operation

More information

Ruggedized Electrical Double Layer Energy Storage Capacitors

Ruggedized Electrical Double Layer Energy Storage Capacitors Ruggedized Electrical Double Layer Energy Storage Capacitors FEATURES Polarized energy storage capacitor with high capacity and energy density Rated voltage: 2.7 V Available in through-hole (radial) version

More information

Power Resistor for Mounting onto a Heatsink Thick Film Technology

Power Resistor for Mounting onto a Heatsink Thick Film Technology Power Resistor for Mounting onto a Heatsink Thick Film Technology DESIGN SUPPORT TOOLS click logo to get started FEATURES 300 W at 85 C bottom case temperature Wide resistance range: 0.3 to 900 k E24 series

More information

Power Resistor Thick Film Technology

Power Resistor Thick Film Technology Power Resistor Thick Film Technology DESIGN SUPPORT TOOLS click logo to get started FEATURES 50 W at 25 C case temperature heatsink mounted Direct mounting ceramic on heatsink Broad resistance range: 0.010

More information

Standard Carbon Film Leaded Resistors

Standard Carbon Film Leaded Resistors Standard Carbon Film Leaded Resistors FEATURES Securely bonded carbon film Good moisture resistance ( R max. ±.5 % R) Good long term stability ( R max. ±.5 % R, for h) Low noise (refer to graph) Suitable

More information

Powered-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Powered-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer) Powered-off Protection,, 1. V to 5.5 V, SPDT Analog Switch (:1 Multiplexer) DESCRIPTION The is a high performance single-pole, double-throw (SPDT) analog switch designed for 1. V to 5.5 V operation with

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET N-Channel 3 V (-S) MOSFET PowerPAK 22-8 Single 8 5 6 7 FEATURES TrenchFET Gen IV power MOSFET % R g and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992

More information

N-Channel 150 V (D-S) MOSFET

N-Channel 150 V (D-S) MOSFET N-Channel 5 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (MAX.) I (A) f Q g (TYP.) 5 3.3 mm.58 at V GS = V 2.2.85 at V GS = 7.5 V 6.6 PowerPAK 22-8S S S S 2 3 3.3 mm G 4 8 7 6 Bottom View 5 Ordering

More information

Electrical Double Layer Energy Storage Capacitors Up to 3 V Operating Voltage

Electrical Double Layer Energy Storage Capacitors Up to 3 V Operating Voltage Electrical Double Layer Energy Storage Capacitors Up to 3 V Operating Voltage FEATURES Polarized energy storage capacitor with high capacity and energy density Rated voltage: 3.0 V Available in through-hole

More information

Pulse Proof Thick Film Chip Resistors

Pulse Proof Thick Film Chip Resistors Pulse Proof Thick Film Chip Resistors FEATURES High pulse performance, up to kw Stability R/R 1 % for 00 h at 70 C AEC-Q200 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

More information