Developing IoT-Based Factory Automation Using F-RAM
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1 Developing IoT-Based Factory Automation Using F-RAM Douglas Mitchell Flash Memory Summit 2018 Santa Clara, CA 1
2 INDUSTRIAL SYSTEMS TODAY
3 Industry 4.0 The smart factory, Cyber-physical systems monitor factory processes and make decentralized decisions. Internet of Things communicate and cooperate both with each other and with humans Includes Interoperability machines, devices, sensors and people Information transparency create a virtual copy of the physical world through sensor data in order to contextualize information. Technical assistance support humans in making decisions and solving problems and accomplish tasks that are too difficult or unsafe for humans. Decentralized decision-making the ability of cyber-physical systems to make simple decisions on their own and become as autonomous as possible
4 INDUSTRY 4.0 and IoT TO SERVICES VIA FUNCTIONS ERP LEVEL Enterprise Resources Communication layer MES LEVEL Manufacturing Execution BY B Industrial IOT devices will be connected 2X the earth s population VIA DATA Communication layer CONTROL LEVEL Machine Controllers Communication layer [CATE GORY NAME] [VALU E] [CATE GORY NAME] [VALU E] FROM SIGNALS Input Output DEVICE LEVEL Sensors, Actuators, Machines
5 Non-volatile Memory Challenges High-reliability NVMs to accurately/completely log data Energy-efficient NVMs to extend battery life High-performance NVMs to quickly access programs & log data Design Problems and Solutions
6 Why This Matters Industry 4.0 relies on processing and storage at the Edge of the Network High-speed Robots, CNCs, Motors, Actuators, Valves, etc. operate with precision at high speed Require high resolution of State in case of power or communication interruption High-reliability, instant data capture ensures maximum uptime and accurate recovery PLC CNC Circuit Breaker
7 NVM Choices Flash (NAND, NOR) Good for code storage, but long latency and early wear-out for datalogging EEPROM High power consumption, wear-out for datalogging MRAM Very high power consumption, limited product offerings F-RAM Low power consumption, instant write, high endurance Flash Memory Summit 2018 Santa Clara, CA 7
8 What is Ferroelectric RAM (F-RAM) F-RAM is a NVM which stores data as a polarization of a ferroelectric material (Lead-Zirconate-Titanate) Pb O2 ZrTi F-RAM is called ferro because molecule follows a hysteresis loop. Down polarization Up polarization
9 What is F-RAM Energy (E) Electric field Position (central atom)
10 Energy (E) What is F-RAM As an electric field is applied, dipoles shift in a crystalline structure to store information This structure results in a number of advantages Symmetrical atomic position ànon volatility Switch in states is instantaneous à Fast writes and Low energy Based on atomic position vs. trapped charge à SER immunity and Radiation tolerant Two symmetrical states and has no reason to degrade à Data retention 100 yrs F-RAM is the perfect choice for Power Efficient Data-logging and Instantaneous Back-up Position (central atom)
11 F-RAM Data Retention Primary F-RAM reliability measure is the retention lifetime of a capacitor cell that has been previously stored in a polarization state for an extended time and then written to the opposite polarization state (OS) 1 Ea 1 1 ( ) Retention Specs for Cypress F-RAMs 2 k T T : L( T ) = L( T ) s s e Cypress F-RAM AEC-Q100 Grade 3 (G3) AEC-Q100 Grade 2 (G2) AEC-Q100 Grade 1 (G1) The specifications can be converted to multi-temperature profiles Example for G1 F-RAM 3 : Temperature Time Factor Profile Life time (T) (t) L(P) T1=125 o C 10% T2=105 o C 15% T3=85 o C 25% T3=55 o C 50% Data Retention >10 85 o C >5 105 o C >11k 125 o C > years OS Data Retention (years) 1e+14 1e+13 1e+12 1e+11 1e Application Temperature ( o C) 1 This type of retention is called as Opposite State (OS) retention. F-RAM has unlimited Same State (SS) retention life within the specified temperature range 2 Conditions: 130nm 2T2C F-RAMs (all AEC-Q-100 Qualified F-RAMs are currently 2T2C) 3 G3 Stress temperature T s = 125 o C, G2 and G1 Stress temperature T s = 150 o C 1e+9 1e+8 1e+7 1e+6 1e+5 1e+4 1e+3 1e+2 1e+1 1e+0 1e-1 G3 G2 G1 1 4
12 F-RAM Endurance Memory endurance is specified as number of times that a memory cell can be written-to or erased F-RAM endurance tests are difficult to practically perform due to very high endurance performance of F-RAM. Innovative test methodologies are needed to determine the endurance limit of 0.13µm F-RAM product Intrinsic material and device endurance characteristics: Intrinsic material with acceleration F-RAM device Endurance behavior of scribe line test structures i.e., intrinsic material can be measured with acceleration F-RAM device endurance can be measured up to cycles through lab tests 1 and extrapolated to based on slope of the curve for intrinsic material Signal Margin Extrapolation based on intrinsic material behavior Signal margin vs. cycles for both F-RAM device and intrinsic material shows higher signal margin of the F-RAM device at cycles compared with the initial value Signal margin at cycles is higher than inital value Number of Cycles 1 Continuous 1 byte writes on FM22L16 at speed of 110ns cycle time (i.e., 220ns for writing both state): days for cycles, 2.55 days for cycles, 255 days for cycles Ref: 2 Cypress takes a guard band and specs up to (instead of ) on datasheets for endurance 1 8
13 2Mb-to-16Mb Excelon F-RAM Features Excelon-Ultra 4Mb 108-MHz Single Data Rate (SDR)/54-MHz Double Data Rate (DDR) Quad SPI Industrial temperature range: -40 C to +85 C Excelon-Auto 2Mb Auto E, 4Mb Auto A 50-MHz SPI Automotive (AEC-Q100) temperature range grade A: -40 C to +85 C Automotive (AEC-Q100) temperature range grade E: -40 C to +125 C Excelon-LP 4Mb, 8Mb 20-MHz SPI (Commercial), 50-MHz SPI (Industrial) Ultra-low (0.10-µA) hibernate current Ultra-low (0.75-µA) deep power-down current Ultra-low (1.00-µA) standby current Commercial temperature range: 0 C to +70 C Industrial temperature range: -40 C to +85 C Common Features for Excelon-Ultra/Auto/LP Operating voltage range: V, V 100-trillion read/write cycle endurance 100-year data retention Excelon F-RAM Density Control I/Os 2 Family Table 4 Standby Current (Typ.) Control Logic Instruction Register Address Register Active Current (Typ.) Packages 2Mb 1 µa 3 ma SOIC (8) 4Mb 1 µa 3 ma SOIC (8), GQFN (8) 8Mb 1 µa 3 ma GQFN (8) 16Mb 1 µa 3 ma SOIC (8), GQNF (8) F-RAM Array Data I/O Register Status Register
14 IoT Dataloggers Fast Writes Low Power Infinite endurance Ø F-RAM is the premium solution Flash Memory Summit 2018 Santa Clara, CA 14
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