arxiv: v2 [cond-mat.stat-mech] 4 Apr 2018

Transcription

1 arxiv: v [cond-mat.stat-mech] 4 Ar 018 Designing Memory Bits with Dissiation lower than the Landauer s Bound Saurav Talukdar, Shreyas Bhaban, James Melbourne and Murti V. Salaaka* 00 Union Street SE, University of Minnesota, Minneaolis, MN 55455, USA *murtis@umn.edu March 018 Abstract. A Brownian article in a symmetric double well otential is used as a reresentation for a single bit memory, where, the location of the article in either well denotes one of the two states of a single bit memory. This article analyzes the effect of modifications to a symmetric double well otential on the minimum heat dissiation associated with erasure of the information stored in a single bit memory. Two tyes of modifications are considered, viz., overla between the two wells and the asymmetry between the two wells of a bit of memory. Moreover, the analysis resented here, takes into account the uncertainty in the success of the erasure rocess. We quantify the effect of the roosed modifications on the heat dissiation accomanying erasure of a bit of information with a comarison to the Landauer s bound. In articular, we conclude that the roosed modifications could result in the minimum heat dissiation being lower than the Landauer s bound in quasi-static erasure rocesses. Furthermore, we quantify the hysical asect ratio for designing a memory bit which could imrove memory density. 1. Introduction: file rearation and submission Over the last four decades, the semiconductor industry has made significant headway in imroving the erformance of CMOS-FET devices, while consistently reducing their size. It has enabled tremendous imrovements in the caabilities of ersonal comuters, latos and smart hones; to the oint where a modern smart hone is several hundred times faster than the comutational abilities of devices that guided the NASA s travel to the moon in A crucial enabler is increase in energy efficiency of comuting devices without comromising on erformance. Recent research is focused toward investigating fundamental limits on how efficient a device can be or how small its hysical dimensions can get; an idea resonating with the limit on heat engine efficiency roosed by Carnot [1]. Subsequent fundamental contributions [, 3, 4] demonstrated a link between the fields of Thermodynamics and Information Theory, leading to an imortant understanding of the limits on the consumtion of energy in erforming bit level oerations.

2 Author guidelines for IOP Publishing journals in L A TEX ε 6 5 U(x)(k b T ) E Distance(m) 10-6 Figure 1. A symmetric double well otential, U(x), where the location of the article in the left and right well designate the state zero and one resectively of a single bit memory. Here, E denotes the barrier height. A oular model of a single bit memory is a Brownian article in a symmetric double well otential in a heat bath of constant temerature T, with the two identical wells searated by a barrier of sufficient height as shown in Fig. 1. The resence of the article in either well denotes one of the ossible two states of a single bit memory. In this article, we designate the article s resence in the left well and right well as state zero and one of the memory resectively. The resence of an energy barrier of sufficient height ( k B T, k B is the Boltzmann constant), ensures that information is retained for a long duration, as is desired from a memory bit. Erasure of a bit of information is a comutational ste, where the outcome is zero irresective of the initial state of the memory bit. In simle terms, irresective of whether the article resides in the right or left well, it needs to be transorted to the left well to accomlish a successful erasure. Landauer s rincile [], asserts that, erasure of a bit of information, rovided both states of a single bit memory are identical, is accomanied by an average heat dissiation of at least k B T ln. Landauer argued that erasure of information lowers the entroy of the overall system and thus, is to be accomanied by heat dissiation to the surrounding. Bennett further utilized Landauer s argument to exlain Maxwell s demon to avoid a aradox violating the second law of thermodynamics [4, 5]. Following the original work of Landauer, there are numerous analytical[6, 7] and exerimental studies[8, 9, 10, 11, 1, 13, 14] focused on the minimal energy consumtion related to information rocessing. A recent interest is on devising erasure mechanisms which result in heat dissiation lower than k B T ln (also referred to as the Landauer s bound). In this regard, researchers have studied the effect of uncertainty in the erasure rocess and have shown that artially successful erasures result in heat dissiation lower than the Landauer s bound [15, 16]. It is shown in [15, 16] that an average heat dissiation of k B T (ln + ln +(1 ) ln (1 )), referred as the Generalized Landauer Bound, is associated with erasure of a bit of

3 Author guidelines for IOP Publishing journals in L A TEX ε 3 information stored in a symmetric one bit memory, with being success roortion of the erasure rocess. An interesting observation is that, a slight comromise on accuracy (by about 10%) of the erasure lowers the associated minimum heat dissiation significantly (by about 50%). Here, the assumtion as made in the revious studies [6, 8, 9, 10, 11, 1, 13, 14] is that, there is insignificant overla between the two hysical states that realize the single bit memory, that is, the two states of a memory bit have sufficient hysical searation. In this article, we analyze the Generalized Landauer Bound (GLB) and its relation to the hysical searation between the two states of a one bit memory (that is, size of the memory bit) in the cases where the two states are identical or not identical. We refer to allowing overla and asymmetry between the two states as introducing modifications in a memory bit. This article analyzes the effect of these modifications on the Generalized Landauer Bound and rovides directions for designing memory devices with lower dissiation. Our aroach introduces an overla arameter and uses roerties of mixture of Gaussian distributions to derive bounds on change in entroy associated with artial information erasure. The derived bounds converge to the GLB when the overla between the two states become insignificant and hence is consistent with existing results in the literature [15, 16, 6]. We quantify the relationshi between the overla and the reduction in entroy change and utilize it to arrive at GLB. Here, we derive sub-gaussian uer bounds analytically as oosed to the numerical study of entroy aroximations for bit erasure in [17]. Furthermore, we obtain comlimentary lower bounds on the decrease in thermodynamic entroy, demonstrating that these bounds are reasonably shar; and for bi-stable wells, hysically searated by lengths close to their standard deviation, the error in entroy aroximation incurred by the insignificant overla aroximation is significant. These quantitative results are of immediate alication as they allow a tight aroximation of the change in entroy in erasure rocess, relevant to the recise estimation of the associated minimal heat dissiation. A quantitative analysis is also rovided for the case when the two states of memory are non identical and the erasure rocess moves the state into the well with higher volume. Moreover, we also quantify a hysical asect ratio for designing a memory bit, where a value higher than the one secified in this article is inconsequential from the energetics standoint and could ossibly imrove memory density.. Single Bit Memory and Erasure Process Following the original work of [], we consider a Brownian article in a double well otential as a model for a single bit memory. The location of the article in either well designates the state of the memory as 0 or 1. In this article, if the article is located in the left well, we denote the state of memory as 0 and if the article is located in the right well, we denote the state as 1. The article in either well is in thermal equilibrium with the surrounding whose temerature is assumed to be a constant T. For most art of this article, we assume that both the wells are identical unless secified.

4 Author guidelines for IOP Publishing journals in L A TEX ε 4 In recent exerimental validations of Landauer s rincile [8, 18, 9, 1], it is seen that the double well otential in the neighborhood of the two stable states can locally be aroximated as a convex quadratic function. It then follows from the Canonical distribution exression that the equilibrium robability distribution is aroximately a Gaussian distribution. Henceforth, we assume that the equilibrium robability distributions of the article in the left and right well are N ( µ, σ ) and N (µ, σ ) resectively, where N (µ, σ ) denotes a Normal distribution with mean µ and variance σ. Thus, if the memory is in the state 0 the equilibrium robability distribution of the article is f 0 (x) = Ce (x+µ) /σ and if the memory state is 1 the equilibrium robability distribution of the article state is f 1 (x) = Ce (x µ) /σ, where x denotes the osition of the article and C is the normalization constant. This assumtion is consistent with the notion of memory as described in [19], where a single bit memory is defined as a system with two stable states, such that, the system is locally in equilibrium in either state and stays in one of the stable states (information retention) for the duration the memory bit is valid (related to the Kramer s escae time across a barrier), after which, stored information is said to be lost. In this article we study the effect of overla between the two wells of the double well otential (that is, the effect of overla between the two equilibrium robability distributions of the two states of a single bit memory) on the Landauer s bound. The two distributions intersect at x = 0, where, f 0 (0) = f 1 (0) = Ce / with := µ/σ. Thus, the overla between the two distributions is characterized by the arameter, which is referred to as the overla arameter. Higher(lower) the value of, lower(greater) is the overla between the two equilibrium distributions. Moreover, is also indicative of the asect ratio of the memory bit as well as hysical extent of the memory bit for a known standard deviation of the equilibrium robability distributions. Prior to erasure, it is equally likely for the state of the memory, M, to be zero or one, that is, P (M = 0) = P (M = 1) = 1. The robability of finding the Brownian article between x and x + dx is given by, P (X (x, x + dx)) = P (M = 0)P (X (x, x + dx) M = 0) + P (M = 1)P (X (x, x + dx) M = 1) = 1 f 0(x)dx + 1 f 1(x)dx. (1) Thus, the robability distribution function,f(x), of the article rior to undergoing an erasure rocess, is an equally weighted mixture of f 0 (x) and f 1 (x). In order to reresent a valid single bit memory, this distribution must be a bi-modal distribution (due to a symmetric double well stable otential). In this regard, an interesting result from the Statistics community is worth mentioning: an equally weighted mixture of symmetric Gaussian distributions is uni-modal if and only if 1; otherwise it is bi-modal [0]. Thus, in order to reresent a symmetric single bit memory with two well defined states, f(x) needs to be a bi-modal distribution with the two modes being alike. Hence, a single bit memory must have > 1 in order to be a valid memory bit.

5 Author guidelines for IOP Publishing journals in L A TEX ε 5 (a) (b) Figure. (a) Probability distribution and (b) the resulting single well otential obtained from simulations. Here, µ = 30 nm, σ = 36 nm and thus < 1. (a) (b) Figure 3. (a) Probability distribution and (b) resulting double well otential obtained from simulations. Here, µ = 700 nm,, σ = 36 nm and thus > 1. Fig. shows the equivalent robability distribution f(x), obtained by binning samles drawn at random from f(x), and otential U(x) = ln f(x) k C BT obtained, when µ = 30 nm, σ = 36 nm(that is, < 1). It is seen that the distribution is uni-modal (the corresonding otential is a single well otential), and cannot be used to realize the two states of a single bit memory. However, µ = 700 nm and σ = 36 nm results in > 1, thereby ensuring a symmetric bimodal distribution and a symmetric double well otential as seen in Fig. 3, which results in a well defined memory bit. It is imortant to note that the overla arameter deends on the hysical design of the memory bit (the double well otential recisely). The > 1 condition is satisfied in recent studies on Landauer s bound [8, 18, 9, 1]. Erasure is a rocess where irresective of the initial state of the memory bit, the final state is zero (also known as reset to zero). With regards to the article in a double well otential reresentation of a single bit memory, irresective of the initial location of the article, the article needs to be transferred to the left well. The Generalized Landauer Bound (GLB) from [15, 16, 8] states that, if the robability of success of the erasure rocess is, then the associated average heat dissiation is at least k B T (ln + ln + (1 ) ln(1 )). The GLB evaluates to k B T ln for = 1; to 0

6 Author guidelines for IOP Publishing journals in L A TEX ε 6 Figure 4. GLB as a function of success roortion. for = 0.5 and is shown in Fig. 4 as a function of the success robability. Note that < 0.5 is not considered here as it would imly a reset to one oeration. It is imortant to oint out that the success roortion,, deends on the rotocol used for accomlishing the erasure. We would like to bring the attention of the reader to [8, 1, 1], where, the authors discuss the deendence of success roortion on rotocol arameters. Under the assumtion of > 1, we analyze the effect of overla arameter on the generalized Landauer bound. The robability distribution function of the article before undergoing erasure, f(x), is given by, f(x) = 1 f 0(x) + 1 f 1(x) (see eq. (1)). After alying an erasure rotocol to the memory bit with success robability, the robability of finding a article between x and x + dx is given by, P (X (x, x + dx)) = f 0 (x)dx + (1 )f 1 (x)dx. () Let, g(x) := f 0 (x) + (1 )f 1 (x). The thermodynamic entroy of the system before erasure is, S f = k B f(x) ln(f(x))dx, and after undergoing erasure rocess with a success roortion is, S g = k B g(x) ln(g(x))dx. It follows from the nd Law of Thermodynamics that the average heat dissiation, where, I 1 = 1 π e x e 1 π e Q d T (S f S g ) = k B T (I 1 I ), x e (e x + (1 )e x ) ln(e x + (1 )e x )dx. cosh(x) ln(cosh(x))dx and I = The deendence of I 1 I on the overla arameter, is shown in Fig. 5. It is seen that k B T (I 1 I ) aroaches the GLB for large values of the overla arameter. Note that for.1, the decrease in thermodynamic entroy, k B (I 1 I ) is less than k B ( ln +(1 ) ln(1 )+ln ) and is aroximately equal to k B ( ln +(1 ) ln(1 ) + ln ), when > 5. Thus, as seen from Fig. 5, for a given success roortion and 1 < < 5, the associated minimum average heat dissiation due to erasure is lower than the GLB. Hence, introducing overla (by reducing the hysical searation)

7 Author guidelines for IOP Publishing journals in L A TEX ε 7 I 1 - I = 0.6 = 1.1 = 1.6 =.1 =.6 = 3.1 = 3.6 = 4.1 = 4.6 = 8 = 10 = 14 = 18 = 0 ln()+(1-)ln(1-)+ln Success Proortion() Figure 5. I 1 I as a function of for various values of. I 1 I aroaches ln + (1 ) ln(1 ) + ln (red curve) as increases. between the two states of the memory bit can enable energy dissiation lower than the GLB in erasure rocesses. We would like to mention that the success roortion is deendent on the rotocol used for erforming erasure. The reader should refer to [8, 1] to understand that success roortion is deendent on a rotocol arameter and the nature of the double well otential. So, in order to achieve the same success roortion with different values of, the rotocol needs to be changed accordingly. Designing of erasure rotocols which maintains the roortion of success for various values of the overla arameter is beyond the scoe of this article. We now derive uer and lower bounds to the change in entroy as a function of the success roortion and searation arameter, that converge to the GLB as the arameter. Consider, Y g g(.) := N( µ, σ ) + (1 )N(µ, σ ), X g g(.) := N (, 1) + (1 )N (, 1), then, S g = S g + k B ln σ []. Similarly, for = 1, and X f f(.) := 1 N (, 1)+ 1N (, 1), we have S f = S f +k B ln σ. Thus, S f S g = S f S g. Henceforth, we will consider f 0 (x) = Ce (x+ ) and f 1 (x) = Ce (x ), where C = 1 π symbol x is overloaded and scaled with σ. and the 3. Uer and lower bounds on the change in entroy during erasure For the derivation below it is assumed that [0.5, 1) and > 1. Aendix) that, It follows (see f 0 (x) ln(f 0 (x) + (1 )f 1 (x))dx f 0 (x) ln (f 0 (x))dx < C((1 ) + ln ( e4 ))e /. (3)

8 Author guidelines for IOP Publishing journals in L A TEX ε 8 Similarly, one can show that, (1 )f 1 (x) ln(f 0 (x) + (1 )f 1 (x))dx (1 )f 1 (x) ln ((1 )f 1 (x))dx < C( + (1 ) ln ( e4 1 ))e /. (4) Let K := f 0(x) ln(f 0 (x))dx = f 1(x) ln(f 1 (x))dx. Using eq. (3) and eq. (4) with = 1 leads to the following lower bound on S f, S f k B ( K + ln C( ln )e / ). (5) From eq. (3) and (4), it also follows that, S g k B ( ln + (1 ) ln(1 ) + K + C( + ln + (1 ) ln(1 ) + 4 )e / ). (6) In the Aendix, we also derive lower bounds for the difference, f 0 (x) ln(f 0 (x) + (1 )f 1 (x))dx (1 )f 1 (x) ln(f 0 (x) + (1 )f 1 (x))dx f 0 (x) ln (f 0 (x))dx, and, (1 )f 1 (x) ln ((1 )f 1 (x))dx. Using eq. (16) and (17) with = 1/, we obtain the following uer bound on S f, S f k B ( K + ln ln (1 + e )). (7) Furthermore, from eq. (16) and (17), we obtain the following lower bound on S g, S g k B (K + ln + (1 ) ln (1 ) + ln(1 + 1 ) + (1 ) ln(1 + )). e 1 e (8) It follows from eq. (5) and (7) that, k B ( K + ln C( ln )e / ) Similarly, it follows from eq. (6) and (8) that, S f k B ( K + ln ln (1 + e )). (9) k B (K H() + ln(1 + 1 e ) + (1 ) ln(1 + 1 e )) S g k B (K H() + C( H() + 4 )e / ), (10)

9 Author guidelines for IOP Publishing journals in L A TEX ε 9 Bounds on (S f -S g )/k B Lower Bound GLB Uer Bound Figure 6. Lower and Uer bounds of (S f S g )/k B and the GLB as a function of for = 0.8. where, H() = ln (1 ) ln (1 ). Using eq. (9) and (10), the difference between the initial and final entroy, S f S g, satisfies the following bounds, S f S g k B (ln H() ln (1 + e ) + C( H() + 4 )e / ), and, (11) S f S g k B (ln H() C( ln )e / + ln(1 + 1 e )+ (1 ) ln(1 + 1 e )). (1) 4. Relationshi to the Generalized Landauer Bound Note from eq. (11) and (1), lim S f S g = k B [ln()+ ln()+(1 ) ln(1 )](GLB); where the uer and lower bounds on the change in entroy, both converge to the GLB. The convergence to the limit is exonentially fast with regards to the overla arameter for the uer and lower bound. Thus, in the limiting case of, it follows from Q d T the nd Law of Thermodynamics that, k B [ln() + ln() + (1 ) ln(1 )], imlying that for a quasi static erasure with success roortion, Q d = k B T [ln() + ln() + (1 ) ln(1 )]. In Figure 6, we resent the above lower and uer bounds on (S f S g )/k B as a function of the overla arameter for = 0.8. The exonential convergence to the GLB value for = 0.8 is evident. Table 1 lists the difference between the uer (eq. (11)) and lower (eq. (1)) bounds of (S f S g )/k B for various values of the overla arameter,, and success roortion,, where, 5 is the seen as the transition oint, beyond which, increasing (that is, the size of the memory bit) has insignificant gains from an energetics ersective. The recent exerimental studies on verification of the Landauer s bound [8, 1, 9] had 0, which indicates that there is scoe to realize memory that is more closely acked. The case of = 1 has to be considered searately. S g = k B K. It then follows from eq. (5) and (7) that, S f S g k B (ln C( ln )e / ), S f S g k B (ln ln (1 + e )). If = 1, g(x) = f 0 (x) and

10 Author guidelines for IOP Publishing journals in L A TEX ε 10 Table 1. Difference between the uer(eq. (11)) and lower(eq. (1)) bounds of (S f S g )/k B as a function of and e e e 4 In the case = 1 as well, it follows that lim S f S g Landauer s bound. = k B ln(), which is the 5. Extensions to Asymmetric 1 bit Memory In this section, we extend the GLB to asymmetric single bit memory, where the two states are non identical wells. An asymmetric one bit memory and the associated minimum heat dissiation for its erasure is discussed in [19, 11]. In articular, [11] resents an exerimental study of the minimum heat dissiation for erfect erasures of a bit of asymmetric memory, with one well being wider than the other, and considers the two cases of resetting the bit into the wider and narrower well. Motivated from the discussion in [11], we extend the GLB to the case of non-identical wells, where, one well is wider than the other. We assume that initially, the article has equal robability to be in either well and the initial robability distribution of the article is given by f(x) as described earlier (see eq. (1)). Similarly, for erasures with success roortion, the final robability distribution of the article is given as g(x) (see eq. ()) Erasing into low entroy well (x µ) e (βσ) Consider f 0 (x) = Ce (x+µ) σ and f 1 (x) = C with β > 1. The article has higher β entroy in the state 1 as comared to state 0. In this case, for reset to zero with success roortion, once can show that lim S f S g = k B [ ln + (1 ) ln(1 ) + ( 1 (1 )) ln β +ln ]. The rate of convergence is exonential with resect to the arameter and deends inversely on the arameter β. Thus, in the limiting case of the two wells being sufficiently far aart and a quasi-static erasure rocess with success roortion, Q d = k B T [ ln +(1 ) ln(1 )+( 1 (1 )) ln β+ln ]. Here, the bit was erased into the well with lower entroy, hence, the limiting value of the change in entroy is higher than the identical wells case. In Figure 7 the heat dissiation associated with erasing into the low entroy well is shown for various values of the asymmetry arameter β and is comared with the Generalized Landauer Bound. It is seen that, as the asymmetry arameter is increased, the associated heat dissiation also increases for various success

11 Author guidelines for IOP Publishing journals in L A TEX ε 11 Q d (k B T) β = 1.1 β = 1.6 β =.1 GLB Success Proortion() Figure 7. Minimum heat dissiation associated with erasing into low entroy well in a quasi static manner. roortions. The case of erasing into the high entroy well is much more interesting and is resented next. 5.. Erasing into high entroy well Consider erasing into the higher entroy well, that is, f 1 (x) = Ce (x µ) σ and f 0 (x) = (x+µ) e (βσ) C with β > 1. Here, the article has higher entroy in the state 0 as comared β to state 1. In this case, for reset to zero with success roortion, once can show that lim S f S g = k B [ ln + (1 ) ln(1 ) + ((1 ) 1 ) ln β + ln ]. The rate of convergence is exonential with resect to the arameter and deends inversely on the arameter β. Thus, in the limiting case of the two wells being sufficiently far aart, Q d = k B T [ ln +(1 ) ln(1 ) ( 1 (1 )) ln β+ln ]. Here, the bit was erased into the well with higher entroy, hence, the limiting value of the change in entroy is lower than the identical wells case. In Figure 8 the heat dissiation associated with erasing into the low entroy well is shown for various values of the asymmetry arameter β and is comared with the Generalized Landauer Bound. It is seen that, as the asymmetry arameter is increased, the associated heat dissiation also increases for various success roortions. In this case, it is seen that erasure can be achieved without any associated heat dissiation. Hence, asymmetry can be utilized toward realizing logically irreversible comutations with zero dissiation. 6. Conclusion We quantify the deendence of the decrease in entroy associated with erasure of a bit of information on the amount of overla between the equilibrium distributions of the two states of a one bit memory. It is seen that overla can lead to considerably lower heat dissiation as comared to the GLB in a quasi static erasure rocess. In articular, we resent quantitative bounds on the change in entroy associated with artial information erasure, which exonentially converge to the GLB when the hysical searation between

12 Author guidelines for IOP Publishing journals in L A TEX ε 1 Q d (k B T) β = 1.1 β = 1.6 β =.1 GLB Success Proortion() Figure 8. Minimum heat dissiation associated with erasing into high entroy well in a quasi static manner. the two states is large. A conclusion is reached that 5 reresents a threshold for energetics of comutation associated with a single bit memory, and memory bit designs with > 5 have insignificant gains comared to 5 case from an energetics ersective. This could ossibly be a memory bit design guideline, which might lead to imrovements in memory density. Furthermore, we discussed the effect of asymmetry between the two wells of a single bit memory on the associated minimum heat dissiation for erasure rocesses. It is seen that, the decrease in entroy associated with erasing into the state with lower volume, results in minimum heat dissiation for a quasi static erasure rocess being higher than the GLB. However, erasing into the state with higher volume, results in the associated minimum heat dissiation for a quasi static erasure rocess being not only lower than the GLB but also with no associated dissiation. Thus, hysical modifications in a single bit memory either due to overla between the two states or due to asymmetry between the two states, along with uncertainty in the outcome of the erasure rocess, are some mechanisms to realize erasures with heat dissiation lower than the Landauer bound. 7. Acknowledgments We would like to thank Prof. Arnab Sen, Deartment of Mathematics, University of Minnesota for initial discussion about the roblem. The authors acknowledge the suort of the National Science Foundation for funding the research under Grant No. CMMI References [1] Sadi Carnot, Hiolyte Carnot, and William Thomson Baron Kelvin. Reflections on the motive ower of heat and on machines fitted to develo that ower. J. Wiley, [] Rolf Landauer. Irreversibility and heat generation in the comuting rocess. IBM Journal of Research and Develoment, 5(3): , [3] John von Neumann and Arthur W Burks. Theory of self-reroducing automata

13 Author guidelines for IOP Publishing journals in L A TEX ε 13 [4] Charles H Bennett. The thermodynamics of comutation : A review. International Journal of Theoretical Physics, 1(1): , 198. [5] HS Lef and AF Rex. Maxwell demon : Entroy, classical and quantum information. Comuting (Institute of Physics Publishing, Bristol and Philadelhia, 003), 003. [6] Kousuke Shizume. Heat generation required by information erasure. Physical Review E, 5(4):3495, [7] Raoul Dillenschneider and Eric Lutz. Memory erasure in small systems. Physical Review Letters, 10(1):10601, 009. [8] Antoine Bérut, Artak Arakelyan, Artyom Petrosyan, Sergio Ciliberto, Raoul Dillenschneider, and Eric Lutz. Exerimental verification of landauer/ s rincile linking information and thermodynamics. Nature, 483(7388): , 01. [9] Yonggun Jun, Momčilo Gavrilov, and John Bechhoefer. High-recision test of landauer s rincile in a feedback tra. Physical review letters, 113(19):190601, 014. [10] Jeongmin Hong, Brian Lambson, Scott Dhuey, and Jeffrey Bokor. Exerimental test of landauers rincile in single-bit oerations on nanomagnetic memory bits. Science Advances, (3):e150149, 016. [11] Momčilo Gavrilov and John Bechhoefer. Erasure without work in an asymmetric double-well otential. Physical Review Letters, 117(0):00601, 016. [1] Saurav Talukdar, Shreyas Bhaban, and Murti V Salaaka. Memory erasure using time-multilexed otentials. Physical Review E, 95(6):0611, 017. [13] I Neri, M Loez-Suarez, D Chiuchiú, and L Gammaitoni. Reset and switch rotocols at landauer limit in a grahene buckled ribbon. EPL (Eurohysics Letters), 111(1):10004, 015. [14] Miquel Loez-Suarez, Igor Neri, and Luca Gammaitoni. Sub-kbt micro-electromechanical irreversible logic gate. Nature communications, 7, 016. [15] Luca Gammaitoni. Beating the landauer s limit by trading energy with uncertainty. arxiv rerint arxiv: , 011. [16] OJE Maroney. Generalizing landauers rincile. Physical Review E, 79(3):031105, 009. [17] D Chiuchiú, MC Diamantini, and L Gammaitoni. Conditional entroy and landauer rincile. EPL (Eurohysics Letters), 111(4):40004, 015. [18] Antoine Bérut, Artyom Petrosyan, and Sergio Ciliberto. Information and thermodynamics: exerimental verification of landauer s erasure rincile. Journal of Statistical Mechanics: Theory and Exeriment, 015(6):P06015, 015. [19] Juan MR Parrondo, Jordan M Horowitz, and Takahiro Sagawa. Thermodynamics of information. Nature Physics, 11(): , 015. [0] Hajo Holzmann and Sebastian Vollmer. A likelihood ratio test for bimodality in two-comonent mixtures with alication to regional income distribution in the eu. AStA Advances in Statistical Analysis, 9(1):57 69, 008. [1] Saurav Talukdar, Shreyas Bhaban, and Murti Salaaka. Beating landauers bound by memory erasure using time multilexed otentials. IFAC-PaersOnLine, 50(1): , 017. [] Thomas M Cover and Joy A Thomas. Elements of information theory. John Wiley & Sons, 01.

14 Author guidelines for IOP Publishing journals in L A TEX ε Aendix: Derivation of eq. (3) 9.1. Uer Bounds First, we derive an uer bound for the difference, which is simlified as, = C = C + C f 0 (x) ln(f 0 (x) + (1 )f 1 (x))dx f 0 (x) ln (f 0 (x))dx, f 0 (x) ln(1 + (1 )f 1(x) )dx f 0 (x) e t / ln(1 + (,) [3, ) 3 e t / ln(1 + (1 ) e (t ) )dt, (t := x + ), e t / (1 ) ln(1 + e (t ) )dt (1 ) e (t ) )dt. (13) Using the logarithmic inequality ln (1 + x) < x for x > 0, the first integral in eq. (13) satisfies, C e t / (1 ) ln(1 + e (t ) )dt (,) [3, ) < C(1 ) e (t ) / dt, = C(1 ) < C(1 ) (,) [3, ) e u / du, (u := t ), ue u / du, ( u > 1), = C(1 )e /. (14) Moreover, 0 (t ) 4 for t [, 3) and e 4 > 1, using which the last integral in eq. (13) satisfies, C 3 C 3 e t / ln(1 + C ln ( e4 ) e t / ln ( e4 )dt, (1 ) e (t ) )dt, e t / dt, C ln ( e4 )e /. (15) The inequality in eq. (3) then follows by combining eq. (14) and (15) with (13).

15 Author guidelines for IOP Publishing journals in L A TEX ε Lower Bounds We now derive a lower bound for the difference, = f 0 (x) ln(f 0 (x) + (1 )f 1 (x))dx e x / π ln(1 + (1 ) e (x ) )dx. f 0 (x) ln (f 0 (x))dx Notice that by direct comutation of second derivatives, it follows that the function ϕ(t) = ln(1 + 1 e(t ) ) is a convex function. Thus, we can exress, e x / π ln(1 + (1 ) e (x ) )dx = E(ϕ(Z)), where, Z is a standard Gaussian random variable. Alying Jensen s inequality [], we have, Similarly, one can show that, = E(ϕ(Z)) ϕ(e(z)), (1 )f 1 (x) ln(f 0 (x) + (1 )f 1 (x))dx = E(Ψ(Z)), e x / (1 ) ln(1 + π 1 e (x+) )dx = ln(1 + 1 e ). (16) (1 )f 1 (x) ln ((1 )f 1 (x))dx where, Ψ(t) = (1 ) ln(1+ 1 e (t+) ) is a convex function. Using Jensen s inequality, E(Ψ(Z)) Ψ(E(Z)) = (1 ) ln(1 + 1 e ). (17)