Monitoring of recombination characteristics of the proton irradiated diodes by microwave absorption transients

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1 Monitoring of recombination characteristics of the proton irradiated diodes by microwave absorption transients E.Gaubas, J.Vaitkus in collaboration with university of Hamburg Institute of Material Science and Applied Research, Vilnius University, Lithuania

2 Outline Experimental arrangement and samples Recombination lifetime in proton and γ-rays irradiated samples at RT Trapping effect and lifetime variations dependent on temperature

3 Experimental setup for measurements of microwave absorption transients photo detector fiber YAG: Nd 3+ pulsed laser MW waveguide cw BI MW detector to osc.+pc A sample cold/hot finger Gunn oscillator 10 GHz slit-shape MW antenna A sample MW waveguide cold/hot chuck sliding short optical waveguide

4 Samples Universität Hamburg Diode Irradiation Fluence Oxygenating CW11A3 protons 3.93*10 14 cm -2 O-diff. : no CW12 A3 protons 9.94*10 14 cm -2 O-diff. : no CW22A3 protons 3.93*10 14 cm -2 O-diff. : 24 h CW24A3 protons 9.94*10 14 cm -2 O-diff. : 24 h CA Mrad γ cm -2 Excitation/MW probe spot location and size on the diode sample. Excitation and probe propagate from the back side perpendicularly to the sample (picture) plane

5 MWA decays in proton and γ-rays irradiated samples at RT Irradiated Si diodes (FZ?) Excitation: 1064 nm, 30 ps (a.u.) 10-1 Irradiated Si diodes (FZ?) Excitation: 1064 nm, 30 ps 400 Mrad γ-rays, CA-17-34, τ 1 = ns 4*10 14 p/cm 2, CW11A3, O diff -no, =14 ns 4*10 14 p/cm 2, CW22A3, O diff -24h, =5 ns 9*10 14 p/cm 2, CW12A3, O diff -no, =3.2 ns (a.u.) 400 Mrad γ-rays, CA-17-34, τ 1 = ns 4*10 14 p/cm 2, CW11A3, O diff -no, =14 ns 4*10 14 p/cm 2, CW22A3, O diff -24h, =5 ns 9*10 14 p/cm 2, CW12A3, O diff -no, =3.2 ns 9*10 14 p/cm 2, CW24A3, O diff -24H, =2.9 ns 9*10 14 p/cm 2, CW24A3, O diff -24H, =2.9 ns t (ns) t=2 ns t (ns)

6 Inverse recombination lifetime in proton and γ-rays irradiated diodes at RT MWA decay lifetime in irradiated Si diodes τ ex =30 ps, λ ex =1064 nm no O diff, Hamburg O diff 24 h, Hamburg τ -1 (ns -1 ) MWA decay lifetime in irradiated Si diodes τ ex =30 ps, λ ex =1064 nm no O diff O diff 24 h γ-rays 400 Mrad τ -1 (ns -1 ) FZ Si, Leuven γ-rays 400 Mrad, Hamburg Fluence (cm -2 ) Fluence (cm -2 )

7 MWA decay variations with excitation intensity and location in proton and γ-rays irradiated diodes CW24A3, p/cm 2, O i diff. 24 h τ ex =10 ns boundary, I 0 (a.u.) 10 2 CA γ-400 Mrad I ex =I 0 a.u., λ ex =1064 nm center 10 2 boundary, 0.25I 0 boundary, 0.25I 0, with BI cw illumination center, 4I 0 boundary I ex =0.5I 0, center (a.u.) 10 1 I ex =0.18I 0, center I ex =0.4I 0, boundary I ex =0.05I 0, boundary (a.u.) t (µ s) t (ns)

8 MWA decay variations dependent on temperature in γ-rays irradiated diodes Si :γ Mrad /,O T=297K 290K 287K 284K 233K 192K 94K t (µ s)

9 MWA decay variations dependent on temperature in γ-rays irradiated diodes Si :γ Mrad /,O T=297K 290K 287K 284K 233K 192K 94K t (µ s)

10 MWA decay variations dependent on temperature in γ-rays irradiated diodes Si :γ Mrad /,O T=297K 290K 287K 284K 233K 192K 94K t (µ s)

11 MWA decay variations dependent on temperature in γ-rays irradiated diodes Si :γ Mrad /,O T=297K 290K 287K 284K 233K 192K 94K t (µ s)

12 MWA decay variations dependent on temperature in γ-rays irradiated diodes Si :γ Mrad /,O T=297K 290K 287K 284K 233K 192K 94K t (µ s)

13 MWA decay variations dependent on temperature in γ-rays irradiated diodes Si :γ Mrad /,O T=297K 290K 287K 284K 233K 192K 94K t (µ s)

14 MWA decay variations dependent on temperature in γ-rays irradiated diodes Si :γ Mrad /,O T=297K 290K 287K 284K 233K 192K 94K t (µ s)

15 Time scale variations of MWA transients with temperature in γ irradiated diode 1 94 K 290 K 298 K 192 K /,O 0.1 Si :γ Mrad 1E t (µs)

16 Trapping effect and MWA decay variations dependent on temperature 1 /,O 0.1 Si :γ Mrad T=297K 290K 287K 284K 233K 192K 94K t (µ s)

17 Initial decay lifetime variations with temperature 10 0 CA1734,400 Mrad γ τ in (µ s) CW24A3, 9.94*10 14 p/cm 2, O dif. 24 h CW22A3, 3.39*10 14 p/cm 2, O dif. 24 h CW12A3, 9.94*10 14 p/cm 2, O dif. NO CW11A3, 3.39*14 14 p/cm 2, O dif. NO T (K)

18 Trapping lifetime variations dependent on temperature in γ-rays and proton irradiated oxygenated Si diodes CW22A3 3.3*10 14 p/cm 2, O i diff 24 h 10 2 τ a CW24A3 9.9*10 14 p/cm 2, O i diff 24 h τ (µs) CA Mrad γ τ (µ s) 10-1 τ a 10-1 τ a T (K) T (K)

19 Trapping activation ev Si CA1734 γ 400 Mrad 10 3 τ a 10 0 CW22A3 3.3*10 14 p/cm 2, O i diff 24 h τ a CW24A3 τ a (µ s) ev 0.53 ev τ (µ s) *10 14 p/cm 2, O i diff 24 h τ a 0.3 ev 0.1 ev 0.3 ev TSC 0.53 ev TSC TSC 0.25 ev 0.4 ev /kT (ev -1 ) /kT (ev -1 )

20 Possible trapping processes g TA R T R I νi TB Trap filling effects S.M.Ryvkin PES(1963) A.Rose.RP..(1955) ED Carrier escape and motion barriers Inter-trap recombination K.Takarabe, P.T.Landsberg, J.K.Liakos. Semic. Sc.Techn.(1997) W.M.Chen, B.Monemar, E.Janzen, J.L.Lindstrom. Phys.Rev.Lett. (1991) ED Ec TD1++e TD Si TD1*+e+h T R Extended defects: clusters, SiOx precipitates, disorder etc. G.Pfister,H.Sher Adv.Phys1978), P.T.Landsberg. Rec. Semic.(1991), S.Havlin, D.Ben-Avraham. Adv. Phys. (2002) T A S MS: S* B EB CC TD12++2e TD1o Ev 0.15 ev 0.07 ev A Metastable centres TD,V-O, etc ev 0.48 ev B TD1* G.Watkins SST(1991) A.Chantre Appl.Ph.A(1989)

21 Lifetime variations in samples irradiated by different particles 10 0 n-si, HR, diode structures S1 -S27 (irradiation with Pb ions 158 GeV beam ) Si Fz, Cz n/n I=40 a.u., τ S22 32 µs S21 43 µs S27 35 µs S 5 7 µs S 6 26 µs S 1 45 µs S 2 21 µs S ns S ns S 9 6 µs S 4 34 µs CE1 450 ns τ eff (µs -1 ) Ar + ions 100 kev LNT 2 neutrons >1 M ev Pb + ions 158 GeV 4 electrons 4 M ev 5 protons 10 M ev 6 γ -rays, 400 Mrad, RT 6 γ -rays, 400 Mrad, LNT RT t (µs) Irradiation fluence (cm -2 )

22 Conclusions The main differences in the examined γ and proton irradiated diodes: recombination lifetime decreases with increase of irradiation fluence in proton irradiated samples: it is shorter in the oxygenated diodes; in proton irradiated material recombination lifetime is significantly shorter than that in γ irradiated ones at RT, the temperature dependent trapping effect is inherent for γ irradiated and oxygenated, proton irradiated diodes; this effect is observable in the temperature range of K for γ irradiated material and K for proton irradiated oxygenated diodes; no trapping effect in non -oxygenated material

23 Thank you for your attention

Carrier lifetime variations during irradiation by 3-8 MeV K in MCZ Si

Carrier lifetime variations during irradiation by 3-8 MeV protons @ 40-300 K in MCZ Si E.Gaubas 1, J.Vaitkus 1, A.Uleckas 1,J.Raisanen 2 Outline 1) Vilnius university, Institute of Materials Science and