Electrically active defects in semiconductors induced by radiation

Size: px
Start display at page:

Download "Electrically active defects in semiconductors induced by radiation"

Transcription

1 Electrically active defects in semiconductors induced by radiation Ivana Capan Rudjer Boskovic Institute, Croatia

2 Outline Radiation damage Capacitance transient techniques Experimental results: radiation induced defects in n-type Si and Ge Conclusion 2

3 Radiation damage Primary damage is the displacement of a lattice atom to create an interstitial and a vacancy. These can: Recombine no damage React with impurities in the silicon eg VO or displace atoms eg B i which are mobile and will react with other impurities or defects these are likely to have electrical activity The intrinsic defects may react with each other eg V 2 to generate electrically active centres or possibly inert defects. 3

4 Effects of particle type At low levels of irradiation with electrons or gamma rays almost all the lattice damage is in the form of simple point defects which can be studied by many techniques and are relatively well understood in Si. Damage from energetic particles or heavy ions is much more complex, difficult to study and with many unknowns in terms of electrical activity and reaction energetics. Main theme of our research in the last few years has been damage using fast neutron irradiation (at TRIGA Ljubljana) to help us to understand ion damage. This SRIM simulation of a 1MeV As ion in Ge shows high concentration clusters of primary defects which react to form stable complexes eg V 2, V 3 or larger clusters of vacancies or interstitials eg extrinsic stacking faults. 4

5 Factors affecting the defect species created by particle irradiation or implantation Type and concentration of impurities Particle species Particle energy Particle dose (fluence) Particles dose rate (flux) Temperature 5

6 Electrically active defects in nsi and nge VO VV VP VV VSb VP E c E v 300 C 220 C 150 C 170 C 160 C 125 C n-type Si n-type Ge 6

7 Deep level transient spectroscopy (DLTS) At typical doping levels of cm -3 sensitivity of the technique is cm -3 7

8 DLTS analysis -3-4 [ 1 exp( c t )] C( t p ) = C0 p p ln(e/t 2 ) -5-6 e = κσ ( T ) T 2 e E kt DLTS signal 1E-9 1E-8 1E-7 1E-6 1E-5 1E-4 1E (a) /kT 1E-8 1E-7 1E-6 1E-5 1E-4 1E Pulse width (s) (b) C0 NT = 2 N D C 2 2 f ( W ) = ( W λ ) ( W λ ) W N T / C = 2 C 0 N D 1 f ( W ) 2 0 DLTS signal T max =89.66K; C C Temperature (K) 8

9 High-resolution Laplace DLTS [DLTS] [Laplace 170K] 9

10 Uniaxial stress Laplace DLTS The symmetry of a defect centre is obtained from the intensity ratio of the split DLTS lines under uniaxial stress applied along the three major crystallographic directions, <100>, <110> and <111>. VO in n-type CZ:Si The splitting pattern establishes the orthorhombic-i symmetry of the VO complex. 10

11 Irradiatated n-type CZ Si DLTS signal (arb. units) Si ion implantation Neutron irradiation (/ 3.5) 4 MeV electrons (/ 4) E1 E2 E3 E4 (3) (2) (1) Temperature (K) (1) 4 MeV electrons (F = cm -2 ) (2) 1 MeV neutrons (F = cm -2 ) (3) 800 kev Si ions (F = cm -2 ) [J. Phys.: Condens. Matter 17 (2005) S2229] 11

12 Si:n 0 sample annealing study (1) as irradiated (2) 100 C (3) 150 C (4) 200 C VV(=/-) VV(-/0) (T < 200 ºC) 12

13 Majority (electron) and minority (hole) carrier traps in nge (low resistivity) Normalized DLTS signal (a.u.) ? Temperature (K) V-Sb [Materials Science in Semiconductor Processing 9 (2006) 606 ] 13

14 Annealing study C, pf Ge:Sb Neutrons 2.4x10 12 cm -2 U b = -5.0 V U p = 0 V t p = 1 ms e n = 80 s -1 as irrad 100 o C 160 o C 200 o C 300 o C C, pf Ge:Sb U b = -3.0 V U p = +2.0 V t p = 1 ms e n = 80 s -1 Neutrons 2.4x10 12 cm -2 as irrad 100 o C 160 o C 200 o C 260 o C Temperature, K Temperature, K 14

15 Annealing study + C-V Normalized DLTS peak intensity (a.u.) V-Sb??? Minority trap Carrier concentration (cm -3 ) 7x x x K Annealing temperature ( C) Temperature ( C) V-Sb + Sb VSb 2 15

16 Uniaxial stress LDLTS measurements CZ n-type (100) Ge:Sb 5Ωcm Dose: cm -2 Normalised DLTS signal 1.0 neut. elec. 0.5 V-Sb Temperatue (K) 16

17 Point-like defects and clusters as seen by Laplace DLTS K 64K LDLTS signal (a.u.) V-Sb Emission, s -1 [Solid State Phenomena (2008) 125] 17

18 Vacancy clusters 0.10 ev K 65 K 75 K C, pf lnσ n Pulse length, s /kT (ev -1 ) σ n (T)=σ n0 exp(- E nσ /kt) E nσ =0.04 ev; σ n0 = cm 2 Akceptor-like defekt Vacancy clusters!!! [Vacuum 84 (2010) 32] 18

19 V-SB <110> GPa 19

20 V-SB <111> V-SB <100> GPa 20

21 C 3v trigonal <100> NS <110> 1:1 <111> 1:3 C 1h - monoclinic 1:2 1:2:2:1 1:2:1 Sb-V T=195K vacancy clusters T=65K Laplace DLTS <111> <110> Sb - V Laplace DLTS <111> <110> <100> <100> Emission, s Emission, s -1 Sb-V pair C 3v Vacancy clusters C 1h??? 21

22 Conclusions Annealing study of n-type Si irradiated with fast neutrons clearly shows that the concentration of the double negative charge state of the divacancy increases with annealing temperature as vacancies and/or divacancies are released from cluster related defect, the E4 defect. Formation of the minority carrier trap in n-type Sb-doped germanim: Sb-V + Sb Sb 2 -V Low dose of fast neutrons has introduced the pointlike defects and small vacancy clusters Trigonal symmetry of the Sb-V pair 22

23 Branko Pivac (IRB) Milko Jakšić (IRB) Radojko Jačimović (IJŠ) Željko Pastuović (Australian Nuclear Science and Technology Organisation ) Anthony R. Peaker (Uni. of Manchester) Vladimir P. Markevich (Uni. of Manchester) 23

Joint ICTP-IAEA Workshop on Physics of Radiation Effect and its Simulation for Non-Metallic Condensed Matter.

Joint ICTP-IAEA Workshop on Physics of Radiation Effect and its Simulation for Non-Metallic Condensed Matter. 2359-3 Joint ICTP-IAEA Workshop on Physics of Radiation Effect and its Simulation for Non-Metallic Condensed Matter 13-24 August 2012 Electrically active defects in semiconductors induced by radiation

More information

Creation and annealing of point defects in germanium crystal lattices by subthreshold energy events

Creation and annealing of point defects in germanium crystal lattices by subthreshold energy events Creation and annealing of point defects in germanium crystal lattices by subthreshold energy events University of Sevilla 203 Sergio M. M. Coelho, Juan F. R. Archilla 2 and F. Danie Auret Physics Department,

More information

Hussein Ayedh. PhD Studet Department of Physics

Hussein Ayedh. PhD Studet Department of Physics Hussein Ayedh PhD Studet Department of Physics OUTLINE Introduction Semiconductors Basics DLTS Theory DLTS Requirements Example Summary Introduction Energetically "deep trapping levels in semiconductor

More information

The annealing of interstitial carbon atoms in high resistivity n-type silicon after proton irradiation

The annealing of interstitial carbon atoms in high resistivity n-type silicon after proton irradiation ROSE/TN/2002-01 The annealing of interstitial carbon atoms in high resistivity n-type silicon after proton irradiation M. Kuhnke a,, E. Fretwurst b, G. Lindstroem b a Department of Electronic and Computer

More information

High-resolution photoinduced transient spectroscopy of radiation defect centres in silicon. Paweł Kamiński

High-resolution photoinduced transient spectroscopy of radiation defect centres in silicon. Paweł Kamiński Institute of Electronic Materials Technology Joint Laboratory for Characterisation of Defect Centres in Semi-Insulating Materials High-resolution photoinduced transient spectroscopy of radiation defect

More information

Lecture 1. OUTLINE Basic Semiconductor Physics. Reading: Chapter 2.1. Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations

Lecture 1. OUTLINE Basic Semiconductor Physics. Reading: Chapter 2.1. Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations Lecture 1 OUTLINE Basic Semiconductor Physics Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations Reading: Chapter 2.1 EE105 Fall 2007 Lecture 1, Slide 1 What is a Semiconductor? Low

More information

Effect of fluence on defect structure of proton-irradiated high-resistivity silicon

Effect of fluence on defect structure of proton-irradiated high-resistivity silicon 4 th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders CERN, 5-7 May, 2004 Effect of fluence on defect structure of proton-irradiated high-resistivity silicon P.

More information

Introduction. Neutron Effects NSEU. Neutron Testing Basics User Requirements Conclusions

Introduction. Neutron Effects NSEU. Neutron Testing Basics User Requirements Conclusions Introduction Neutron Effects Displacement Damage NSEU Total Ionizing Dose Neutron Testing Basics User Requirements Conclusions 1 Neutron Effects: Displacement Damage Neutrons lose their energy in semiconducting

More information

Development of Radiation Hard Si Detectors

Development of Radiation Hard Si Detectors Development of Radiation Hard Si Detectors Dr. Ajay K. Srivastava On behalf of Detector Laboratory of the Institute for Experimental Physics University of Hamburg, D-22761, Germany. Ajay K. Srivastava

More information

characterization in solids

characterization in solids Electrical methods for the defect characterization in solids 1. Electrical residual resistivity in metals 2. Hall effect in semiconductors 3. Deep Level Transient Spectroscopy - DLTS Electrical conductivity

More information

n i exp E g 2kT lnn i E g 2kT

n i exp E g 2kT lnn i E g 2kT HOMEWORK #10 12.19 For intrinsic semiconductors, the intrinsic carrier concentration n i depends on temperature as follows: n i exp E g 2kT (28.35a) or taking natural logarithms, lnn i E g 2kT (12.35b)

More information

Defect Formation in 18 MeV Electron Irradiated MOS Structures

Defect Formation in 18 MeV Electron Irradiated MOS Structures Bulg. J. Phys. 33 (2006) 48 54 Defect Formation in 18 MeV Electron Irradiated MOS Structures S. Kaschieva 1, V. Gueorguiev 1, E. Halova 2, S. N. Dmitriev 3 1 Institute of Solid State Physics, Bulgarian

More information

Non-traditional methods of material properties and defect parameters measurement

Non-traditional methods of material properties and defect parameters measurement Non-traditional methods of material properties and defect parameters measurement Juozas Vaitkus on behalf of a few Vilnius groups Vilnius University, Lithuania Outline: Definition of aims Photoconductivity

More information

SURVEY OF RECENT RADIATION DAMGE STUDIES AT HAMBURG

SURVEY OF RECENT RADIATION DAMGE STUDIES AT HAMBURG SURVEY OF RECENT RADIATION DAMGE STUDIES AT HAMBURG E. Fretwurst 1, D. Contarato 1, F. Hönniger 1, G. Kramberger 2 G. Lindström 1, I. Pintilie 1,3, A. Schramm 1, J. Stahl 1 1 Institute for Experimental

More information

Interaction of ion beams with matter

Interaction of ion beams with matter Interaction of ion beams with matter Introduction Nuclear and electronic energy loss Radiation damage process Displacements by nuclear stopping Defects by electronic energy loss Defect-free irradiation

More information

Effects of Antimony Near SiO 2 /SiC Interfaces

Effects of Antimony Near SiO 2 /SiC Interfaces Effects of Antimony Near SiO 2 /SiC Interfaces P.M. Mooney, A.F. Basile, and Zenan Jiang Simon Fraser University, Burnaby, BC, V5A1S6, Canada and Yongju Zheng, Tamara Isaacs-Smith Smith, Aaron Modic, and

More information

A new protocol to evaluate the charge collection efficiency degradation in semiconductor devices induced by MeV ions

A new protocol to evaluate the charge collection efficiency degradation in semiconductor devices induced by MeV ions Session 12: Modification and Damage: Contribute lecture O-35 A new protocol to evaluate the charge collection efficiency degradation in semiconductor devices induced by MeV ions Ettore Vittone Physics

More information

Ion Implantation ECE723

Ion Implantation ECE723 Ion Implantation Topic covered: Process and Advantages of Ion Implantation Ion Distribution and Removal of Lattice Damage Simulation of Ion Implantation Range of Implanted Ions Ion Implantation is the

More information

Semiconductor Detectors

Semiconductor Detectors Semiconductor Detectors Summary of Last Lecture Band structure in Solids: Conduction band Conduction band thermal conductivity: E g > 5 ev Valence band Insulator Charge carrier in conductor: e - Charge

More information

Test Simulation of Neutron Damage to Electronic Components using Accelerator Facilities

Test Simulation of Neutron Damage to Electronic Components using Accelerator Facilities Test Simulation of Neutron Damage to Electronic Components using Accelerator Facilities Donald King, Patrick Griffin, Ed Bielejec, William Wampler, Chuck Hembree, Kyle McDonald, Tim Sheridan, George Vizkelethy,

More information

Change of Majority-Carrier Concentration in p-type Silicon by 10 MeV Proton Irradiation. Abstract

Change of Majority-Carrier Concentration in p-type Silicon by 10 MeV Proton Irradiation. Abstract Change of Majority-Carrier Concentration in p-type Silicon by 10 MeV Proton Irradiation H. Iwata, S. Kagamihara, H. Matsuura, S. Kawakita 1), T. Oshima ), T. Kamiya ) Osaka Electro-Communication University,

More information

Lecture 7: Extrinsic semiconductors - Fermi level

Lecture 7: Extrinsic semiconductors - Fermi level Lecture 7: Extrinsic semiconductors - Fermi level Contents 1 Dopant materials 1 2 E F in extrinsic semiconductors 5 3 Temperature dependence of carrier concentration 6 3.1 Low temperature regime (T < T

More information

Investigation of SiC by Positrons

Investigation of SiC by Positrons nd/march/000/erlangen Investigation of SiC by Positrons Atsuo KAWASUSO Martin-Luther-Universität Halle-Wittenberg (Humboldt Research Fellow) Japan Atomic Energy Research Institute Takasaki Establishment

More information

2. Point Defects. R. Krause-Rehberg

2. Point Defects. R. Krause-Rehberg R. Krause-Rehberg 2. Point Defects (F-center in acl) 2.1 Introduction 2.2 Classification 2.3 otation 2.4 Examples 2.5 Peculiarities in Semiconductors 2.6 Determination of Structure and Concentration 2.7

More information

GaN for use in harsh radiation environments

GaN for use in harsh radiation environments 4 th RD50 - Workshop on radiation hard semiconductor devices for very high luminosity colliders GaN for use in harsh radiation environments a (W Cunningham a, J Grant a, M Rahman a, E Gaubas b, J Vaitkus

More information

A study of the double-acceptor level of the silicon divacancy in a proton irradiated n-channel CCD.

A study of the double-acceptor level of the silicon divacancy in a proton irradiated n-channel CCD. A study of the double-acceptor level of the silicon divacancy in a proton irradiated n-channel CCD. D. Wood*, D. Hall, J.P.D Gow and A. Holland. Centre for Electronic Imaging, The Open University, Milton

More information

Modeling of charge collection efficiency degradation in semiconductor devices induced by MeV ion beam irradiation

Modeling of charge collection efficiency degradation in semiconductor devices induced by MeV ion beam irradiation Modeling of charge collection efficiency degradation in semiconductor devices induced by MeV ion beam irradiation Ettore Vittone Physics Department University of Torino - Italy 1 IAEA Coordinate Research

More information

EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH STUDIES OF THE RADIATION HARDNESS OF OXYGEN-ENRICHED SILICON DETECTORS

EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH STUDIES OF THE RADIATION HARDNESS OF OXYGEN-ENRICHED SILICON DETECTORS EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH CERN EP/98 62 11 Juin 1998 STUDIES OF THE RADIATION HARDNESS OF OXYGEN-ENRICHED SILICON DETECTORS A. Ruzin, G. Casse 1), M. Glaser, F. Lemeilleur CERN, Geneva,

More information

Review of Semiconductor Fundamentals

Review of Semiconductor Fundamentals ECE 541/ME 541 Microelectronic Fabrication Techniques Review of Semiconductor Fundamentals Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Page 1 Semiconductor A semiconductor is an almost insulating material,

More information

Characterization of Irradiated Doping Profiles. Wolfgang Treberspurg, Thomas Bergauer, Marko Dragicevic, Manfred Krammer, Manfred Valentan

Characterization of Irradiated Doping Profiles. Wolfgang Treberspurg, Thomas Bergauer, Marko Dragicevic, Manfred Krammer, Manfred Valentan Characterization of Irradiated Doping Profiles, Thomas Bergauer, Marko Dragicevic, Manfred Krammer, Manfred Valentan Vienna Conference on Instrumentation (VCI) 14.02.2013 14.02.2013 2 Content: Experimental

More information

Ion Implant Part 1. Saroj Kumar Patra, TFE4180 Semiconductor Manufacturing Technology. Norwegian University of Science and Technology ( NTNU )

Ion Implant Part 1. Saroj Kumar Patra, TFE4180 Semiconductor Manufacturing Technology. Norwegian University of Science and Technology ( NTNU ) 1 Ion Implant Part 1 Chapter 17: Semiconductor Manufacturing Technology by M. Quirk & J. Serda Spring Semester 2014 Saroj Kumar Patra,, Norwegian University of Science and Technology ( NTNU ) 2 Objectives

More information

Preliminary measurements of charge collection and DLTS analysis of p + /n junction SiC detectors and simulations of Schottky diodes

Preliminary measurements of charge collection and DLTS analysis of p + /n junction SiC detectors and simulations of Schottky diodes Preliminary measurements of charge collection and DLTS analysis of p + /n junction SiC detectors and simulations of Schottky diodes F.Moscatelli, A.Scorzoni, A.Poggi, R.Nipoti DIEI and INFN Perugia and

More information

Energy levels in electron irradiated n-type germanium

Energy levels in electron irradiated n-type germanium Energy levels in electron irradiated ntype germanium P.M. Mooney, M. Cherki, J.C. Bourgoin To cite this version: P.M. Mooney, M. Cherki, J.C. Bourgoin. Energy levels in electron irradiated ntype germanium.

More information

Deep electronic states in ion-implanted Si

Deep electronic states in ion-implanted Si Deep electronic states in ion-implanted Si EVANS-FREEMAN, J. H., EMIROGLU, D., GAD, M. A., MITROMARA, N. and VERNON-PARRY, K. D. Available from Sheffield Hallam University

More information

POSITRON AND POSITRONIUM INTERACTIONS WITH CONDENSED MATTER. Paul Coleman University of Bath

POSITRON AND POSITRONIUM INTERACTIONS WITH CONDENSED MATTER. Paul Coleman University of Bath POSITRON AND POSITRONIUM INTERACTIONS WITH CONDENSED MATTER Paul Coleman University of Bath THE FATE OF POSITRONS IN CONDENSED MATTER POSITRON-SURFACE INTERACTIONS positron backscattering BACKSCATTERED

More information

Unmanageable Defects in Proton- Irradiated Silicon: a Factual Outlook for Positron Probing N. Yu. Arutyunov 1,2, M. Elsayed 1, R.

Unmanageable Defects in Proton- Irradiated Silicon: a Factual Outlook for Positron Probing N. Yu. Arutyunov 1,2, M. Elsayed 1, R. Unmanageable Defects in Proton- Irradiated Silicon: a Factual Outlook for Positron Probing N. Yu. Arutyunov 1,2, M. Elsayed 1, R. Krause-Rehberg 1 1 Department of Physics, Martin Luther University, 06120

More information

Reduction in Majority-Carrier Concentration in N-Doped or Al-Doped 4H-SiC Epilayer by Electron Irradiation

Reduction in Majority-Carrier Concentration in N-Doped or Al-Doped 4H-SiC Epilayer by Electron Irradiation Reduction in Majority-Carrier Concentration in -Doped or Al-Doped 4H-SiC Epilayer by Electron Irradiation Hideharu Matsuura, Hideki Yanagisawa, Kozo ishino, Takunori ojiri Shinobu Onoda, Takeshi Ohshima

More information

Introduction into Positron Annihilation

Introduction into Positron Annihilation Introduction into Positron Annihilation Introduction (How to get positrons? What is special about positron annihilation?) The methods of positron annihilation (positron lifetime, Doppler broadening, ACAR...)

More information

Atomistic simulations on the mobility of di- and tri-interstitials in Si

Atomistic simulations on the mobility of di- and tri-interstitials in Si Atomistic simulations on the mobility of di- and tri-interstitials in Si related publications (since 2001): Posselt, M., Gao, F., Zwicker, D., Atomistic study of the migration of di- and tri-interstitials

More information

Atomistic Front-End Process Modeling

Atomistic Front-End Process Modeling Atomistic Front-End Process Modeling A Powerful Tool for Deep-Submicron Device Fabrication SISPAD 2001, Athens Martin Jaraiz University of Valladolid, Spain Thanks to: P. Castrillo (U. Valladolid) R. Pinacho

More information

Experience with Moving from Dpa to Changes in Materials Properties

Experience with Moving from Dpa to Changes in Materials Properties Experience with Moving from Dpa to Changes in Materials Properties Meimei Li, Argonne National Laboratory N. V. Mokhov, Fermilab 46 th ICFA Advanced Beam Dynamics Workshop Sept. 27 Oct. 1, 2010 Morschach,

More information

A semiconductor is an almost insulating material, in which by contamination (doping) positive or negative charge carriers can be introduced.

A semiconductor is an almost insulating material, in which by contamination (doping) positive or negative charge carriers can be introduced. Semiconductor A semiconductor is an almost insulating material, in which by contamination (doping) positive or negative charge carriers can be introduced. Page 2 Semiconductor materials Page 3 Energy levels

More information

D DAVID PUBLISHING. Transport Properties of InAs-InP Solid Solutions. 2. Experiment. 1. Introduction. 3. Results and Discussion

D DAVID PUBLISHING. Transport Properties of InAs-InP Solid Solutions. 2. Experiment. 1. Introduction. 3. Results and Discussion Journal of Electrical Engineering 2 (2014) 207-212 doi: 10.17265/2328-2223/2014.05.002 D DAVID PUBLISHING Nodar Kekelidze 1, 2, 3, Elza Khutsishvili 1, 2, Bella Kvirkvelia 1, 2, 3, David Kekelidze 2, Vugar

More information

Positron Annihilation Spectroscopy - A non-destructive method for material testing -

Positron Annihilation Spectroscopy - A non-destructive method for material testing - Maik Butterling Institute of Radiation Physics http://www.hzdr.de Positron Annihilation Spectroscopy - A non-destructive method for material testing - Maik Butterling Positron Annihilation Spectroscopy

More information

Semiconductor physics I. The Crystal Structure of Solids

Semiconductor physics I. The Crystal Structure of Solids Lecture 3 Semiconductor physics I The Crystal Structure of Solids 1 Semiconductor materials Types of solids Space lattices Atomic Bonding Imperfection and doping in SOLIDS 2 Semiconductor Semiconductors

More information

Silicon Detectors in High Energy Physics

Silicon Detectors in High Energy Physics Thomas Bergauer (HEPHY Vienna) IPM Teheran 22 May 2011 Sunday: Schedule Semiconductor Basics (45 ) Silicon Detectors in Detector concepts: Pixels and Strips (45 ) Coffee Break Strip Detector Performance

More information

Chapter 3. Defects in Semiconductors. 3.1 Introduction

Chapter 3. Defects in Semiconductors. 3.1 Introduction Chapter 3 Defects in Semiconductors 3.1 Introduction In an ideal crystal lattice, each atom is at its designated position and deviations from this perfect structure are called imperfections or defects.

More information

Radiation Damage in Silicon Detectors for High-Energy Physics Experiments

Radiation Damage in Silicon Detectors for High-Energy Physics Experiments 960 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 48, NO. 4, AUGUST 2001 Radiation Damage in Silicon Detectors for High-Energy Physics Experiments Mara Bruzzi Abstract Radiation effects in silicon detectors

More information

Charge Collection and Capacitance-Voltage analysis in irradiated n-type magnetic Czochralski silicon detectors

Charge Collection and Capacitance-Voltage analysis in irradiated n-type magnetic Czochralski silicon detectors Charge Collection and Capacitance-Voltage analysis in irradiated n-type magnetic Czochralski silicon detectors M. K. Petterson, H.F.-W. Sadrozinski, C. Betancourt SCIPP UC Santa Cruz, 1156 High Street,

More information

Mara Bruzzi INFN and University of Florence, Italy and SCIPP, UC Santa Cruz, USA

Mara Bruzzi INFN and University of Florence, Italy and SCIPP, UC Santa Cruz, USA SCIPP 06/16 September 2006 Capacitance-Voltage analysis at different temperatures in heavily irradiated silicon detectors Mara Bruzzi INFN and University of Florence, Italy and SCIPP, UC Santa Cruz, USA

More information

INCREASING OF RADIATION HARDNESS OF SILICON FOR DETECTORS BY PRELIMINARY IRRADIATION.

INCREASING OF RADIATION HARDNESS OF SILICON FOR DETECTORS BY PRELIMINARY IRRADIATION. INCREASING OF RADIATION HARDNESS OF SILICON FOR DETECTORS BY PRELIMINARY IRRADIATION. P. G. Litovchenko 1, W. Wahl 2, M.Glaser 3, L.I.Barabash 1, A. A. Groza 1, A. P. Dolgolenko 1, A.Ya.Karpenko 1, V.

More information

Session 5: Solid State Physics. Charge Mobility Drift Diffusion Recombination-Generation

Session 5: Solid State Physics. Charge Mobility Drift Diffusion Recombination-Generation Session 5: Solid State Physics Charge Mobility Drift Diffusion Recombination-Generation 1 Outline A B C D E F G H I J 2 Mobile Charge Carriers in Semiconductors Three primary types of carrier action occur

More information

Semiconductor Device Physics

Semiconductor Device Physics 1 Semiconductor Device Physics Lecture 3 http://zitompul.wordpress.com 2 0 1 3 Semiconductor Device Physics 2 Three primary types of carrier action occur inside a semiconductor: Drift: charged particle

More information

Multiscale modelling of D trapping in W

Multiscale modelling of D trapping in W CMS Multiscale modelling of D trapping in W Kalle Heinola, Tommy Ahlgren and Kai Nordlund Department of Physics and Helsinki Institute of Physics University of Helsinki, Finland Contents Background Plasma-wall

More information

Important point defects after γ and proton irradiation investigated by TSC technique

Important point defects after γ and proton irradiation investigated by TSC technique Important point defects after γ and proton irradiation investigated by TSC technique I. Pintilie a),b), E. Fretwurst b), G. Kramberger c) G. Lindström b) and J. Stahl b) a) National Institute of Materials

More information

Photoionization of the silicon divacancy studied by positron-annihilation spectroscopy

Photoionization of the silicon divacancy studied by positron-annihilation spectroscopy PHYSICAL REVIEW B VOLUME 57, NUMBER 20 15 MAY 1998-II Photoionization of the silicon divacancy studied by positron-annihilation spectroscopy H. Kauppinen* and C. Corbel Institut National des Sciences et

More information

Semiconductor-Detectors

Semiconductor-Detectors Semiconductor-Detectors 1 Motivation ~ 195: Discovery that pn-- junctions can be used to detect particles. Semiconductor detectors used for energy measurements ( Germanium) Since ~ 3 years: Semiconductor

More information

RADIATION HARDNESS OF SILICON DETECTORS FOR APPLICATIONS IN HIGH-ENERGY PHYSICS EXPERIMENTS. E. Fretwurst, M. Kuhnke, G. Lindström, M.

RADIATION HARDNESS OF SILICON DETECTORS FOR APPLICATIONS IN HIGH-ENERGY PHYSICS EXPERIMENTS. E. Fretwurst, M. Kuhnke, G. Lindström, M. Journal of Optoerlectronics and Advanced Mateials Vol. 2, No. 5, 2, p. 575-588 Section 4: Semiconductors RADIATION HARDNESS OF SILICON DETECTORS FOR APPLICATIONS IN HIGH-ENERGY PHYSICS EXPERIMENTS E. Fretwurst,

More information

Fluence dependent variations of recombination and deep level spectral characteristics in neutron and proton irradiated MCz, FZ and epi-si structures

Fluence dependent variations of recombination and deep level spectral characteristics in neutron and proton irradiated MCz, FZ and epi-si structures Outline Fluence dependent variations of recombination and deep level spectral characteristics in neutron and proton irradiated MCz, FZ and epi-si structures Motivation of combined investigations: E.Gaubas,

More information

Electron-irradiation-induced deep levels in n-type 6H SiC. Citation Journal of Applied Physics, 1999, v. 85 n. 11, p

Electron-irradiation-induced deep levels in n-type 6H SiC. Citation Journal of Applied Physics, 1999, v. 85 n. 11, p Title Electron-irradiation-induced deep levels in n-type 6H SiC Author(s) Gong, M; Fung, SHY; Beling, CD; You, Z Citation Journal of Applied Physics, 1999, v. 85 n. 11, p. 7604-7608 Issued Date 1999 URL

More information

Doping of Semiconductors Using Radiation Defects Produced by Irradiation with Protons and Alpha Particles

Doping of Semiconductors Using Radiation Defects Produced by Irradiation with Protons and Alpha Particles Semiconductors, Vol. 35, No. 7, 1, pp. 735 761. Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 7, 1, pp. 769 795. Original Russian Text Copyright 1 by Kozlov, Kozlovski. REVIEWS Doping

More information

Direct and Indirect Semiconductor

Direct and Indirect Semiconductor Direct and Indirect Semiconductor Allowed values of energy can be plotted vs. the propagation constant, k. Since the periodicity of most lattices is different in various direction, the E-k diagram must

More information

ABSTRACT. Keywords: CCD, Radiation Damage, High Resistivity Silicon, Charge Transfer Efficiency 1. INTRODUCTION

ABSTRACT. Keywords: CCD, Radiation Damage, High Resistivity Silicon, Charge Transfer Efficiency 1. INTRODUCTION Proton radiation damage in high-resistivity n-type silicon CCDs C. J. Bebek, D. E. Groom, S. E. Holland, A. Karcher, W. F. Kolbe, J. Lee, M. E. Levi, N. P. Palaio, B. T. Turko, M. C. Uslenghi, M. T. Wagner,

More information

SEMICONDUCTOR PHYSICS

SEMICONDUCTOR PHYSICS SEMICONDUCTOR PHYSICS by Dibyendu Chowdhury Semiconductors The materials whose electrical conductivity lies between those of conductors and insulators, are known as semiconductors. Silicon Germanium Cadmium

More information

September 21, 2005, Wednesday

September 21, 2005, Wednesday , Wednesday Doping and diffusion I Faster MOSFET requires shorter channel P + Poly Al Al Motivation Requires shallower source, drain Al P + Poly Al source drain Shorter channel length; yes, but same source

More information

Theory and practice of Materials Analysis for Microelectronics with a nuclear microprobe

Theory and practice of Materials Analysis for Microelectronics with a nuclear microprobe TUTORIAL Theory and practice of Materials Analysis for Microelectronics with a nuclear microprobe Ettore Vittone Physics Department University of Torino, Italy Ettore Vittone 1 IBIC for the functional

More information

Junction spectroscopy techniques and deep-level defects in semiconductors

Junction spectroscopy techniques and deep-level defects in semiconductors Junction spectroscopy techniques and deep-level defects in semiconductors A. R. Peaker 1, V. P. Markevich 1, and J. Coutinho 2 1 School of Electrical and Electronic Engineering and Photon Science Institute,

More information

PICTS Analysis of Extended Defects in Heavily Irradiated Silicon

PICTS Analysis of Extended Defects in Heavily Irradiated Silicon IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 49, NO. 5, OCTOBER 2002 2431 PICTS Analysis of Extended Defects in Heavily Irradiated Silicon David Menichelli, Emilio Borchi, Zheng Li, and Mara Bruzzi Abstract

More information

Crystal Properties. MS415 Lec. 2. High performance, high current. ZnO. GaN

Crystal Properties. MS415 Lec. 2. High performance, high current. ZnO. GaN Crystal Properties Crystal Lattices: Periodic arrangement of atoms Repeated unit cells (solid-state) Stuffing atoms into unit cells Determine mechanical & electrical properties High performance, high current

More information

ECE 335: Electronic Engineering Lecture 2: Semiconductors

ECE 335: Electronic Engineering Lecture 2: Semiconductors Faculty of Engineering ECE 335: Electronic Engineering Lecture 2: Semiconductors Agenda Intrinsic Semiconductors Extrinsic Semiconductors N-type P-type Carrier Transport Drift Diffusion Semiconductors

More information

EE 212 FALL ION IMPLANTATION - Chapter 8 Basic Concepts

EE 212 FALL ION IMPLANTATION - Chapter 8 Basic Concepts EE 212 FALL 1999-00 ION IMPLANTATION - Chapter 8 Basic Concepts Ion implantation is the dominant method of doping used today. In spite of creating enormous lattice damage it is favored because: Large range

More information

NITROGEN CONTAINING ULTRA THIN SiO 2 FILMS ON Si OBTAINED BY ION IMPLANTATION

NITROGEN CONTAINING ULTRA THIN SiO 2 FILMS ON Si OBTAINED BY ION IMPLANTATION NITROGEN CONTAINING ULTRA THIN SiO 2 FILMS ON Si OBTAINED BY ION IMPLANTATION Sashka Petrova Alexandrova 1, Evgenia Petrova Valcheva 2, Rumen Georgiev Kobilarov 1 1 Department of Applied Physics, Technical

More information

Outlook: Application of Positron Annihilation for defects investigations in thin films. Introduction to Positron Annihilation Methods

Outlook: Application of Positron Annihilation for defects investigations in thin films. Introduction to Positron Annihilation Methods Application of Positron Annihilation for defects investigations in thin films V. Bondarenko, R. Krause-Rehberg Martin-Luther-University Halle-Wittenberg, Halle, Germany Outlook: Introduction to Positron

More information

ECE 142: Electronic Circuits Lecture 3: Semiconductors

ECE 142: Electronic Circuits Lecture 3: Semiconductors Faculty of Engineering ECE 142: Electronic Circuits Lecture 3: Semiconductors Agenda Intrinsic Semiconductors Extrinsic Semiconductors N-type P-type Carrier Transport Drift Diffusion Semiconductors A semiconductor

More information

Performance of MAX phase Ti 3 SiC 2 under the irradiation of He/H :

Performance of MAX phase Ti 3 SiC 2 under the irradiation of He/H : Performance of MAX phase Ti 3 SiC 2 under the irradiation of He/H : Elaboration from DFT Yuexia Wang Institute of Modern Physics Fudan University Hefei-2016 Materials Issues Neutron flux (14MeV, 0.5-0.8

More information

Radiation Damage in Silicon Detectors - An introduction for non-specialists -

Radiation Damage in Silicon Detectors - An introduction for non-specialists - CERN EP-TA1-SD Seminar 14.2.2001 Radiation Damage in Silicon Detectors - An introduction for non-specialists - Michael Moll CERN EP - Geneva ROSE Collaboration (CERN RD48) ROSE - Research and Development

More information

Semiconductor Physical Electronics

Semiconductor Physical Electronics Semiconductor Physical Electronics Sheng S. Li Department of Electrical Engineering University of Florida Gainesville, Florida Plenum Press New York and London Contents CHAPTER 1. Classification of Solids

More information

Introduction to Radiation Testing Radiation Environments

Introduction to Radiation Testing Radiation Environments http://www.maxwell.com/microelectronics/products/radtest/intro.html Introduction to Radiation Testing Quick links: Radiation Environments Total Dose Testing Single Event Effects Testing Neutron Testing

More information

Material Science using Positron Annihilation

Material Science using Positron Annihilation Material Science using Positron Annihilation R. Krause-Rehberg Universität Halle, Inst. für Physik 9.3.2018 Some historical remarks Techniques of Positron Annihilation Study of Defects in Semiconductors

More information

Transmissive Final Optic for Laser IFE

Transmissive Final Optic for Laser IFE Transmissive Final Optic for Laser IFE S. A. Payne, J. F. Latkowski, A. Kubota, M. J. Caturla, S. N. Dixit, and J. A. Speth Lawrence Livermore National Laboratory April 4, 2002 HAPL Program Workshop General

More information

Monitoring of recombination characteristics of the proton irradiated diodes by microwave absorption transients

Monitoring of recombination characteristics of the proton irradiated diodes by microwave absorption transients Monitoring of recombination characteristics of the proton irradiated diodes by microwave absorption transients E.Gaubas, J.Vaitkus in collaboration with university of Hamburg Institute of Material Science

More information

Positron Annihilation Spectroscopy

Positron Annihilation Spectroscopy Positron Annihilation Spectroscopy (1) Angular Correlation θ N x, y = p x, y m C θ γ-ray (511keV ± E) 0 (2) Doppler Broadening Cp E = z 2 θ N p ~100µm 22 Na (e + Source) e - e + ~ 10-12 s Sample γ-ray

More information

EE 5344 Introduction to MEMS CHAPTER 5 Radiation Sensors

EE 5344 Introduction to MEMS CHAPTER 5 Radiation Sensors EE 5344 Introduction to MEMS CHAPTER 5 Radiation Sensors 5. Radiation Microsensors Radiation µ-sensors convert incident radiant signals into standard electrical out put signals. Radiant Signals Classification

More information

Test Simulation of Neutron Damage to Electronic Components using Accelerator Facilities

Test Simulation of Neutron Damage to Electronic Components using Accelerator Facilities 1 AP/DM-05 Test Simulation of Neutron Damage to Electronic Components using Accelerator Facilities D. King 1, E. Bielejec 1, C. Hembree 1, K. McDonald 1, R. Fleming 1, W. Wampler 1, G. Vizkelethy 1, T.

More information

Radiation Damage In Silicon Detectors

Radiation Damage In Silicon Detectors UNIVERZA V LJUBLJANI FAKULTETA ZA MATEMATIKO IN FIZIKO ODDELEK ZA FIZIKO Joµzef Pulko SEMINAR Radiation Damage In Silicon Detectors MENTOR: prof. dr. Vladimir Cindro Abstract: Radiation damage in silicon

More information

Semiconductors 1. Explain different types of semiconductors in detail with necessary bond diagrams. Intrinsic semiconductors:

Semiconductors 1. Explain different types of semiconductors in detail with necessary bond diagrams. Intrinsic semiconductors: Semiconductors 1. Explain different types of semiconductors in detail with necessary bond diagrams. There are two types of semi conductors. 1. Intrinsic semiconductors 2. Extrinsic semiconductors Intrinsic

More information

Key Questions. ECE 340 Lecture 6 : Intrinsic and Extrinsic Material I 9/10/12. Class Outline: Effective Mass Intrinsic Material

Key Questions. ECE 340 Lecture 6 : Intrinsic and Extrinsic Material I 9/10/12. Class Outline: Effective Mass Intrinsic Material 9/1/1 ECE 34 Lecture 6 : Intrinsic and Extrinsic Material I Class Outline: Things you should know when you leave Key Questions What is the physical meaning of the effective mass What does a negative effective

More information

RADIATION EFFECTS AND DAMAGE

RADIATION EFFECTS AND DAMAGE RADIATION EFFECTS AND DAMAGE The detrimental consequences of radiation are referred to as radiation damage. To understand the effects of radiation, one must first be familiar with the radiations and their

More information

2. Point Defects. R. Krause-Rehberg

2. Point Defects. R. Krause-Rehberg R. Krause-Rehberg 2. Point Defects (F-center in NaCl) 2.1 Introduction 2.2 Classification 2.3 Notation 2.4 Examples 2.5 Peculiarities in Semiconductors 2.6 Determination of Structure and Concentration

More information

ATOMIC-SCALE THEORY OF RADIATION-INDUCED PHENOMENA

ATOMIC-SCALE THEORY OF RADIATION-INDUCED PHENOMENA ATOMIC-SCALE THEORY OF RADIATION-INDUCED PHENOMENA OVERVIEW OF THE LAST FIVE YEARS AND NEW RESULTS Sokrates T. Pantelides Department of Physics and Astronomy, Vanderbilt University, Nashville, TN The theory

More information

Evidence of a second acceptor state of the E center in Si1-x Gex

Evidence of a second acceptor state of the E center in Si1-x Gex Powered by TCPDF (www.tcpdf.org) This is an electronic reprint of the original article. This reprint may differ from the original in pagination and typographic detail. Author(s): Kuitunen, K. & Tuomisto,

More information

Improvement of depth resolution of VEPAS by a sputtering technique

Improvement of depth resolution of VEPAS by a sputtering technique Martin Luther University Halle Improvement of depth resolution of VEPAS by a sputtering technique R. Krause Rehberg, M. John, R. Böttger, W. Anwand and A. Wagner Martin Luther University Halle & HZDR Dresden

More information

The effect of point defects in zircon

The effect of point defects in zircon aterials for nuclear waste immobilization: The effect of point defects in zircon iguel Pruneda Department of Earth Sciences University of Centre for Ceramic Immobilisation Radiation damage process α-decay

More information

Diffusion in Extrinsic Silicon and Silicon Germanium

Diffusion in Extrinsic Silicon and Silicon Germanium 1 Diffusion in Extrinsic Silicon and Silicon Germanium SFR Workshop & Review November 14, 2002 Hughes Silvestri, Ian Sharp, Hartmut Bracht, and Eugene Haller Berkeley, CA 2002 GOAL: Diffusion measurements

More information

Sheng S. Li. Semiconductor Physical Electronics. Second Edition. With 230 Figures. 4) Springer

Sheng S. Li. Semiconductor Physical Electronics. Second Edition. With 230 Figures. 4) Springer Sheng S. Li Semiconductor Physical Electronics Second Edition With 230 Figures 4) Springer Contents Preface 1. Classification of Solids and Crystal Structure 1 1.1 Introduction 1 1.2 The Bravais Lattice

More information

Study of semiconductors with positrons. Outlook:

Study of semiconductors with positrons. Outlook: Study of semiconductors with positrons V. Bondarenko, R. Krause-Rehberg Martin-Luther-University Halle-Wittenberg, Halle, Germany Introduction Positron trapping into defects Methods of positron annihilation

More information

Engineering 2000 Chapter 8 Semiconductors. ENG2000: R.I. Hornsey Semi: 1

Engineering 2000 Chapter 8 Semiconductors. ENG2000: R.I. Hornsey Semi: 1 Engineering 2000 Chapter 8 Semiconductors ENG2000: R.I. Hornsey Semi: 1 Overview We need to know the electrical properties of Si To do this, we must also draw on some of the physical properties and we

More information

Correction of the electric resistivity distribution of Si wafers using selective neutron transmutation doping (SNTD) in MARIA nuclear research reactor

Correction of the electric resistivity distribution of Si wafers using selective neutron transmutation doping (SNTD) in MARIA nuclear research reactor NUKLEONIKA 2012;57(3):363 367 ORIGINAL PAPER Correction of the electric resistivity distribution of Si wafers using selective neutron transmutation doping (SNTD) in MARIA nuclear research reactor Mikołaj

More information

STUDY OF SEMICONDUCTOR DEVICES EXPOSED TO SPATIAL RADIATION

STUDY OF SEMICONDUCTOR DEVICES EXPOSED TO SPATIAL RADIATION STUDY OF SEMICONDUCTOR DEVICES EXPOSED TO SPATIAL RADIATION G. DOMINGO YAGÜEZ 1, D. N. VILLARRAZA 1, M. A. CAPPELLETTI 1 y E. L. PELTZER y BLANCÁ 1,2 1 Grupo de Estudio de Materiales y Dispositivos Electrónicos

More information

Electrons are shared in covalent bonds between atoms of Si. A bound electron has the lowest energy state.

Electrons are shared in covalent bonds between atoms of Si. A bound electron has the lowest energy state. Photovoltaics Basic Steps the generation of light-generated carriers; the collection of the light-generated carriers to generate a current; the generation of a large voltage across the solar cell; and

More information