Fluence dependent variations of recombination and deep level spectral characteristics in neutron and proton irradiated MCz, FZ and epi-si structures

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1 Outline Fluence dependent variations of recombination and deep level spectral characteristics in neutron and proton irradiated MCz, FZ and epi-si structures Motivation of combined investigations: E.Gaubas, J.Vaitkus, T.Čeponis, A.Uleckas, E.Fretwurst, and G.Lindstrom Vilnius University, Institute of Materials Science and Applied Research University of Hamburg - samples: neutron irradiated MCz, FZ and epi-si structures and proton irradiated MCz, FZ Si structures, - comparison of recombination lifetime dependences on fluence in neutron irradiated MCz, FZ and epi-si, - comparative analysis of the impact of penetrative and stopped hadrons due to close values of lifetime, - fluence and anneal dependent variations of recombination lifetime, RRT and DLTS spectra in 2 MeV FZ Si, Fluence and anneal dependent variations of recombination lifetime in neutron irradiated MCZ Si Pulsed spectroscopy of deep level by microwave probed photoconductivity transients: - synchronous spectroscopy of deep levels and lifetime in neutron irradiated MCZ Si wafer, - fluence dependent variations of recombination and spectral characteristics Summary

2 1 Neutron irradiated FZ MCZ wafer pieces Irradiation plan March 27 TRIGA reactor Resp. Gregor arrival HH , 12:2 in cold box Material: Wacker FZ <111> 2 kohmcm 29 µm Process STM W337 phi_n [cm-2] 1.E+13 1.E+13 1.E+14 1.E+14 1.E+15 1.E+15 1.E+16 1.E+16 W337 FZ B11 E8 Q5 G13 H2 H3 Q6 I13 n- epi heat treatments 8C C, 24 h Irradiation TRIGA reactor March 24 Material: ITME n-epi <111> 5 Ohmcm 5 µm Process: CIS annealing n-epi 8 C V_dep [V] phi_n [cm-2] 5 µm t_max [days] at t_max 2.E E E E E E E not irradiated 34 x x not irradiated 35 x x p- epi Irradiation TRIGA reactor November 26 arrival HH: 8. January 27, by Gregor Samples Material: ITME p-epi <111> 15 Ohmcm 5 µm Process: CIS annealing p-epi 8 C V_dep [V] phi_n [cm-2] 5 µm t_max [days] at t_max 3.E E E E E E not irradiated 43* x x not irradiated 44* x x * breakdown voltage about 6 V, guard ring not working 2 Proton irradiated FZ n-si recombination characteristics in 2 MeV proton irradiated n-fz Si: -close thickness to epi-, resistivity 25 Ω cm; - close absolute values to neutron irradiated MCZ and FZ Si - combined investigations of MWR, DLTS and RRT on fluence and anneal, - comparison of cross-sectional recombination lifetime profiles heat treatments 8C C + 32C, 24 h 3 Spectroscopy of deep levels and lifetime by MW-PCS in neutron as-irradiated (kept in freezer) and 28 C 24 h annealed MCZ wafers

3 Neutron fluence dependent recombination lifetime in MCZ, FZ and epi- Si 1 4 Okmetic MCZ<1> 1kOhm cm µm non-processed CIS Samples non-irradiated Neutron irradiated FZ diodes n-epi diodes p-epi diodes τ R (ns) τ (ns) Fluence (n/cm 2 ) Fluence (cm -2 )

4 Fluence dependent lifetime variations in different particle energy irradiated structures τ R (ns) 1 4 Neutron irradiated material MCZ as-irradiated Proton irradiated material 1 3 MCZ RT -5 MeV sfz RT - 24 GeV/c DOFZ RT - 24 GeV/c V- n- FZ 2 MeV Fluence (cm -2 ) DLS A (V-O) V 2 =/- V-cluster (S.W atts) V 2 -/ FZ n-si diode V 1.9 MeV protons 7x2 p/cm 2 FZ n-si diode CERN-Oslo 5 MeV electrons 2 e/cm

5 MW-PCD-depth scans: comparison of lifetime depth profiles in 2 MeV protons irradiated FZ and neutrons irradiated MCZ Si Amplitude V F Z n-s i P roton e nergy 2 M ev fluence 4* 4 p/cm x (µm ) VVP Si Tomas` Proton energy 2 MeV fluence 4*4 p/cm 2 8 τ (ns) 6 2 MeV protons 4 2 U MWR (a.u) t (µs) VVP Si Tomo Proton energy 2 MeV fluence 4*4 p/cm 2 x= 1 µm x= 4 µm U MWR (a.u) t (µs) VVP Si Tomo Proton energy 2 MeV fluence 4*4 p/cm 2 x = 4, µm τ 1 =,65 µs τ 2 = 1,1 µs reactor neutrons τ R (ns), MWR amplitude x (µm) 3 MCZ 1 kω cm, d= 3 µm 1 neutron fluence 2 cm cm -2 5 cm cm -2 MWR amplitude X (µm)

6 Fluence dependent variations of MW-PCD, DLTS and RRT characteristics in 2 MeV protons irradiated FZ n-si Wafer substrates and diodes High injection level 2 τ RR, ns Diodes: power rectifiers/ pin switches 2 MeV protons =.5A =1A =2A =4A =6A =8A =1A τ R (ns) 2 MeV protons FZ n-si wafers/diodes Low injection/excitation level Low injection level DLS ev V-O-? Φ, cm -2 cluster edge &/or H-?.24 ev.35 ev / 17K V 2 =/-.42 ev V 2 -/ non-irradiated 2 MeV protons irradiated 7E12 p/cm 2 7E13 p/cm 2 7E14 p/cm Fluence (p/cm 2 )

7 DLS Variation of DLT spectra and RRT with anneal and fluence Decrease of amplitude of the DLTS peaks with increase of the isochronal (24 h) anneal temperature together with transform of the 17 K peak into 14 and 225 K peaks. Decrease of the amplitude of the majority carrier peaks is accompanied by the enhancement of the minority carrier peaks Anneals: 8C C + 32C, 24 h VVP-Helsinki Si diode proton irradiated 2MeV, 72 p/cm 2 heated: 8 O C: 1h 8 O C: 24h 16 O C: 24h 2 O C: 24h 24 O C: 24h DLS (mv) DLTS Increasing proton fluence VVP-Helsinki Si diode proton irradiated 2MeV, 73 p/cm 2 heated: 8 O C: 1h 8 O C: 24h 16 O C: 24h 2 O C: 24h 24OC: 24h t rr, ns DLS as-irradiated =.5A =1A =2A =4A =6A =8A =1A 3 VVP-Helsinki Si diode proton irradiated 2MeV, 7*4 p/cm heated: 8 O C: 1h 8 O C: 24h 16 O C: 24h 2 O C: 24h RRT annealed at 24 C DLS VVP-Helsinki Si diode proton irradiated 2MeV, 72 p/cm 2 heated at 32 o C 17Hz 12Hz 7Hz Majority carrier traps E (mev) σ (cm 2 ) P E-13 P E-14 P E-15 P E-12 Φ, cm -2 t rr, ns E13 Φ, cm -2 1E14 =.5A =1A =2A =4A =6A =8A =1A

8 DLS (mv) Variation of the DLT spectra for majority and minority carrier traps U R =-1V, majority carrier traps VVP-Helsinki Si diode proton irradiated 2MeV, 73 p/cm 2 heated: 8 O C: 1h 8 O C: 24h 16 O C: 24h 2 O C: 24h 24OC: 24h Shift of the DLTS peaks with decrease of absolute amplitude DLT as- irradiated 2MeV 7E13 U R =-.2 V, U 1 =.2 f= 4 Hz f= 7 Hz f=1 Hz f=17 Hz Decrease of the peak amplitude ascribed to majority carrier traps is accompanied by increase of the minority carrier peaks Minority carrier traps P1=.494 ev, σ=7.4e-14 cm 2 P2=.552 ev, σ=5.3e-14 cm 2 as-irradiated U R =-.2 V, majority+minority carrier traps DLS 3 VVP-Helsinki Si diode proton irradiated 2MeV, 7*4 p/cm DLT U R =-1V, majority carrier traps heated: 8 O C: 1h 8 O C: 24h 16 O C: 24h 2 O C: 24h annealed at 24 C 24h DLT MeV 7E13 U R =-.2 V, U 1 =.2 V f=17 Hz as-irradiated annealed at Σ+24 C 24h U R =-.2 V, majority+minority carrier traps anneled at 24 C for 24 h 2MeV 7E13 U R =-.2 V, U 1 =.2 f= 7 Hz f=1 Hz f=12 Hz f=17 Hz f=22 Hz P1 P2 2MeV 7E13 p/cm2, annealed 24 o C 24 h

9 Recombination Recombination+ trapping effect Lifetime in neutron irradiated MCZ Si under heat treatments Anneals: 8C C, 24 h Recombination lifetime (µs) Okmetic MCZ<1> 1kΩ cm as-irradiated Heat treated at T ann = 8 C for t anneal = 5 min 3 min 24 h Waker W337 FZ diodes- un-annealed n-epi diodes 8 C-long anneal p-epi diodes 8 C-long anneal Neutron fluence (n/cm 2 ) τ R *K tr = τ eff (ns) U MWR 1-2 linear increase of density of the trapping centers variation of density of the trapping centers with fluence described by Gaussian distribution with max at 1E14 n/cm fluence (n/cm 2 ) Effective lifetime (µs) Okmetic MCZ Si 1kOhm*cm 3µm 1E12 n/cm 2 t (µs) o C 24h 18 o C 24h 28 o C 24h 38 o C 24h MCZ Si 1kΩ*cm d=3µm τ 1 8 o C τ 2 18 o C U MWR o C 24h Neutron fluence cm -2 Okmetic MCZ Si 1kOhm*cm 3µm 1E14 n/cm 2 8 o C 24h 18 o C 24h 28 o C 24h t (µs)

10 CZJ monochromator Spectroscopy of deep levels by microwave probed pulsed photoconductivity MC laser 5 ps, λ=162 nm τl << τr fs - ps- ms Excitation pulsed IR Coaxial needle-tip MW laser 164 nm antenna MW integrated module Far IR spectral filters Sample X 1 ms 5-5 Hz, λ=.5-3 µm Si MW waveguide OPO+DFG λ = µm MW bridge Ti-sapphire SP laser 4 fs TDS 514 ns Pulsed laser for IRPO pump, 164 nm IRPO (T, λ grating) 15-5 nm Electronic pulse MCZ Si timing & shift ( t) system λ sig = 1613 nm U MWA λ sig = 1549 nm λ sig = 1533 nm U MWR TDS-514 t t generation quenching t t (µs) U MW-PC (t)=k n ex (t) d=n pd exp(-t/τ R ); n p, i max - n p, i bgrnd =F N i U MW-PC, i () = σ i (hν) N i Φph = α (hν) Φph σ i ( hυ ) = A E i ( hυ E ) ( hυ ) 3 i 3 2 Φph U MW-PC 1E12 as-irradiated E =.31 ev simulated E 2 =.38 ev simulated =.49 ev simulated 1-3 E 4 =.62 ev simulated fixed constant,4,8 1,2 1,6 2, σ (hν), 5, 4, 3, 2, 1,,,2,4,6,8 1, 1,2 α (hν) MW-PC Similar to photo-ionization spectroscopy technique 1,2 1,4 1,6 MW-PC E C E V σ (hν),4,35,3,25,2,15,1,5,,,2,4,6,8 1, 1,2 Direct control of a photoresponse - peak excess carrier density at hν and carrier lifetime/decay shape Excluded impact of : SPV, leakage current, field redistribution relatively to DC-PC No separation for excess carrier type, expensive instrumentation

11 Spectroscopy of deep levels by microwave probed pulsed photoconductivity in the neutron as-irradiated MCZ Si wafers An entire spectrum of the photoresponse amplitude variations: peak excess carrier density with hν U MW-PC, I DC-phc E12 as-irradiated E 1 =.31 ev simulated E 2 =.38 ev simulated =.49 ev simulated E 4 =.62 ev simulated diode - DC+SPV photocurrent,4,8 1,2 1,6 Direct control of a photoresponse - peak excess carrier density at hν and carrier lifetime/decay shape 8 U MW-PC E12 as-irradiated E 1 =.31 ev simulated E 2 =.38 ev simulated =.49 ev simulated E 4 =.62 ev simulated U MW-PC E12 as-irradiated MW-PC peak amplitude E 1 =.31 ev simulated E 2 =.38 ev simulated =.49 ev simulated E 4 =.62 ev simulated τ R 6 4 τ (µs)

12 Extraction of parameters of the radiation induced deep levels The activation energy of most of the extracted deep levels in MCZ neutron as-irradiated Si is [E1~.31 ±.3 and E2~.42 ±.2 ev] E3 ~`.51±.3 and E4 ~.61±.3 ev MW-PC spectra within relative scale of photo-ionization cross-sections has been carried out using the model of Lucovsky with A = 2 * ( 16πe h / 3ncm )( ε eff / ε ) 2 σ i ( hυ ) = A E i ( hυ E ) ( hυ ) 3 i 3 2 1E15 n/cm 2 σ 1E12 n/cm 2 E ev, N 2 =25 a.u. E 2.42 ev, N 3 =28 a.u. σ E 2.31 ev.395 ev σ 1E16 n/cm 2 E 2.31 ev, N 2 = 38 a.u..4 ev, N 3 =145 a.u Extraction of activation energy of radiation induced deep levels by simulating steps of the photo-conductivity amplitude within approximation of Lucovsky model for MCZ samples irradiated with reactor neutrons of fluence 1E12 (a), 1E15 (b) and 1E16 n/cm 2 (c).

13 Spectroscopy of bulk deep levels in neutron irradiated MCz Si U MW-PC 1E12 n/cm 2 1E13 n/cm 2 1E15 n/cm 2 1E16 n/cm 2 N T 1 4 MCz neutron as -irradiated E 2 ~.31 ev ~.42 ev Fluence (n/cm 2 ) Fluence dependent variations of photoconductivity spectra steps in the range of bulk excitations Relative values of the MW-PC peaks fitted to different deep levels as a function of neutron irradiation fluence.

14 Spectroscopy of deep levels by microwave probed pulsed photoconductivity: - impact of annealing Okmetic MCZ Si 1kOhm*cm 3µm 1E12 n/cm 2 U MWR 8 o C 24h 18 o C 24h 28 o C 24h 38 o C 24h U MW-PC E12 as-irradiated MV-PCS E 1 =.31 ev simulated E 2 =.38 ev simulated =.49 ev simulated E 4 =.62 ev simulated after heat treatments C for 24 h,4,8 1,2 1,6 2, σ t (µs) 1E12 neutron irradiated and annealed at C for 24h =.51 ev simulated E 4 =.62 ev simulated

15 Spectroscopy of deep levels by microwave probed pulsed photoconductivity: - impact of annealing σ 1-2 1E16 as- irradiated E 1 =.29 ev simulated E 2 =.36 ev simulated =.52 ev simulated 1E16 annealed 28 C =.52 ev simulated?-e 4 =.76 ev simulated U MWR nm/1.16 ev Okmetic MCZ Si 1kOhm*cm 3µm 1E16 n/cm 2 8 o C 24h 18 o C 24h 28 o C 24h 38 o C 24h t (µs)

16 SUMMARY Lifetime decreases from few µs to about of 2 ps with enhancement of neutron irradiation fluence ranging from 2 to 3 6 n/cm 2 in the as-irradiated material. Lifetime values are nearly the same for neutron irradiated wafer and diode samples. These values are close to that in >2 MeV proton irradiated various Si diodes. However, absolute values of recombination lifetime are significantly shorter in the 2 MeV protons irradiated FZ Si when using the same scale of fluences. A nearly linear decrease of the recombination lifetime with fluence of the reactor neutrons from 2 to 3 6 n/cm2 in the MCz grown Si samples corroborates a nonlinear introduction rate of dominant recombination centres. For 2 MeV protons irradiated Si, production of recombination defects in ~2 MeV protons irradiated FZ Si is efficient, and lifetime depth profiles correlate with stopping range of particles. In DLTS, heat treatments indicate transformations of majority and minority carrier traps. These changes are also revealed by variations of the excess carrier decay lifetime. An increase of lifetime and a change of carrier decay shape (process), dependent on fluence, appears under annealing at elevated temperatures (>18 C, for 24 h). Lifetime behavior with heat treatment temperature shows an enhancement of impact of the competition between at least two traps. For neutron as-irradiated Si, levels with activation energy of about [.31±.2,.4±.3],.51±.3 and.61±.3 ev (kt.3 ev) are resolved. An amplitude of the revealed MW-PC spectral steps has shown an increase with neutron irradiation fluence indicating an enhancement of density of the specific defects.

17 Gregor Kramberger & Ljubljana group is acknowledged for neutron irradiations Thanks to J.Raisanen and S.Vayranen for proton irradiations Thank You for attention!

18 Simulation of the temperature dependent lifetime variations τ inst = τ R K tr (1), K tr =[1+M N CM /(N CM + n ) 2 ] (2) N CM =N C exp(- E M /kt) N V, N VM, n [cm -3 ] K tr K=MN VM (T)/ n 2 :- exp(- E M /kt) K=M/N VM (T):- exp( E M /kt) 2 E M 3 n fixed T [K] 1' N V N VM E M =.23 ev 2' N V (T) N VM (T) n (T), excitation intensity fixed K n=1e12*f(t), M=1E14 cm -3 K n=1e12 fixed excess carier density n(t) at fixed excitation intensity Variation of trapping coefficient K tr with temperature, and formation of lifetime extrema at either fixed excess carrier density or for invariable excitation intensity τ I 1 - E tr =.2 ev E r =.43 ev, E tr = /kT (ev -1 ) τ I 1 3 E tr =.3 ev Variation of instantaneous lifetime with trap level position and trap density vs. inverse thermal activation factor at simultaneous recombination and trapping τ R *K tr = τ eff (ns) M tr = 1*4 cm *4-2 1*5-3 5*5-4 1*6-5 5*6-6 be prilipimo -7 1/kT (ev -1 ) linear increase of density of the trapping centers variation of density of the trapping centers with fluence described by Gaussian distribution with max at 1E14 n/cm 2 fluence (n/cm 2 ) 5 3

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