Studies of the Spin Dynamics of Charge Carriers in Semiconductors and their Interfaces. S. K. Singh, T. V. Shahbazyan, I. E. Perakis and N. H.
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1 Studies of the Spin Dynamics of Charge Carriers in Semiconductors and their Interfaces S. K. Singh, T. V. Shahbazyan, I. E. Perakis and N. H. Tolk Department of Physics and Astronomy Vanderbilt University, Nashville, TN Buffalo Consortium Meeting 11/4/00 Funded in part by DARPA/ONR
2 Objectives Measure Important Parameters in Magnetic Semiconductors: Band-Offset : Using Internal Photo-Emission (IPE) and SHG Techniques. Ultrafast Spin Dynamics: Time-Resolved Photoluminescense and Reflectivity, Faraday Rotation. Probing Electron-Hole Dynamics: Time-Dependent Second Harmonic Generation (SHG). Develop Theoretical Models of Ultrafast Spin Dynamics.
3 Vanderbilt Capabilities Series of Ultrafast, High-Power, Tunable Lasers: FIR and UV OPAs (Optical Parameteric Amplifier) Range: ev Pulse Energy: 10 µj Rep. Rate: 1 KHz Pulse Width: 150 fs or 3.5 ps Free Electron Laser Range: ev Pulse Energy: ~ 50 mj Rep. Rate: 30 Hz Pulse Width: 4-6 µs Several Ti:Sapphire and Other Lasers 9 T Superconducting Magnet Having Four Optical Windows. Fast Electronics, Optics, etc.
4 Band-Offset Measurements in Si/Si 0.45 Ge 0.5 Photo Signal (mv) ev Wavelength (microns) 1.12 ev Si V Photons Si 0.45 Ge 0.55 (100 nm) hν Si Si 0.45 Ge 0.55 IPE is a sensitive technique to measure band offset (within 10 mev). Can be used to measure band offsets in Magnetic Semiconductors (e.g. InMnAs/GaMnSb)
5 Proposed Band-Offset Measurements in III 1-X Mn X V /III-V based Semiconductor Vanderbilt University CB 0.87 ev Fermi Level 0.8 ev 0.15 ev Holes Electrons 0.4 ev VB 0.47 ev In 1-X Mn X As GaSb Band offsets can be measured as a function of Magnetic field.
6 Proposed Lifetime Measurements of Spin-Polarized Carriers in Magnetic Semiconductors (e.g. In 1-X Mn X As/GaSb) CB GaSb VB σ + ~ 0.5 ev GaSb σ 0.8 ev K Create Photo-Excited Spin- Polarized Carriers in InAs Quantum Well. K Probe Spin-Scattering Mechanisms: Time-Resolved Photoluminescense in Magnetic Field. K Faraday Rotation In 1-X Mn X As K Study Role of Mn ion in Spin Scattering
7 Theory: Electric-Field-Induced-SH (EFISH) General Equation for SHG: P (2ω) = χ ( 2 ) d,b E( ω)e( ω) + χ ( 2 ) d,s E( ω)e( ω) + χ ( 2) q,b E( ω) E( ω) + χ ( 3) d,b ε( ω ~ 0) E( ω)e( ω) ( 3) χ ε ( ω ~ 0) d,b E( ω)e( ω) : Electric Field Induced SH ε ( ω ~ 0) : Space Charge Field at the Interface E(ω): Electric Field of Fundamental Beam
8 System With Inversion Symmetry Under Electric Dipole Approximation P( 2ω) = χ ( 2) E( ω)e( ω) Inversion P( 2ω) = χ ( 2) ( E( ω))( E( ω)) χ ( 2 ) = 0 in Bulk But not at surfaces or with static electric field where symmetry is broken
9 Experimental Setup Ti:Sapphire Laser λ = nm, τ p =100fs, P av =400mW RG-Filter Polarizers Lenses Prism Sample Rotation Table PMT I (2 ω) (t) χ (2) +χ (3) E(t) 2 I ( ω) 2 ω UG-Filter Iris 2ω 3eV
10 Electron-Hole Dynamics at Si/SiO 2 Interface 9 ev SiO ev Si e - O ev Electrons E DC Holes SHG Signal (Counts/100 msec) Laser Blocked Time (Sec) E DC Field Charge Separation ( Carrier Injection) Electrons trapped at Surface New Charged Traps in Oxide due to Radiation
11 Comparison of SiO 2 and ZrSiO x Oxides SHG from Si-Dielectrics SHG Intensity (a.u.) Si (100)-SiO 2 Qualitative difference in the shape of the mw curves in SiO 2 and ZrSiO x : SHG Intensity (a.u.) Si (100)-ZrSiO x Difference in electron and hole injection rate? mw Time(second)
12 SHG measurements to probe electron-hole Dynamics in Magnetic Semiconductor Electrons hν hν In 0.94 Mn 0.06 As GaSb GaAs GaAs (100) 12 nm 500 nm 300 nm CB hν VB In 1-x Mn x As GaSb E F Holes Koshihara et al., PRL 78, 4617 (1997) K SHG measurements can probe dynamic electric field due to electron-hole migration, induced by photons. Understand photo-induced Ferromagnetism.
13 Summary Band-Offset : Internal Photo-Emission (IPE) and SHG Techniques. Lifetime of Photo-Excited Spin-Polarized Carriers: Faraday Rotation, Time-Resolved Photoluminescense and Reflectivity. Probing Electron-Hole Dynamics: Time-Dependent Second Harmonic Generation (SHG). Develop Theoretical Models of Ultrafast Spin Dynamics.
14 Samples InAs/GaMnSb, InMnAs/GaMnSb : BO InAs/GaSb : BO, SHG InMnAs/GaSb : SHG GaSb/InMnAs/GaSb QW : LT BO: Band Offset LT: Life Time SHG: Second Harmonic Generation
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