2SK1254(L), 2SK1254(S)

Transcription

1 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching V gate drive device Can be driven from V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK D G 1. Gate. Drain 3. Source. Drain S

2 Absolute Maximum Ratings (Ta = C) Item Symbol Ratings Unit Drain to source voltage V DSS V Gate to source voltage V GSS ±0 V Drain current I D 3 A Drain peak current I D(pulse) * 1 1 A Body to drain diode reverse drain current I DR 3 A Channel dissipation Pch* 0 W Channel temperature Tch 10 C Storage temperature Tstg to +10 C Notes: 1. PW µs, duty cycle 1%. Value at T C = C

3 Electrical Characteristics (Ta = C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown V (BR)DSS V I D = ma, V GS = 0 voltage Gate to source breakdown voltage V (BR)GSS ±0 V I G = ±0 µa, V DS = 0 Gate to source leak current I GSS ± µa V GS = ±16 V, V DS = 0 Zero gate voltage drain current I DSS 0 µa V DS = 0 V, V GS = 0 Gate to source cutoff voltage V GS(off) V I D = 1 ma, V DS = V Static Drain to source on state resistance R DS(on) Ω I D = A, V GS = V * Ω I D = A, V GS = V * 1 Forward transfer admittance yfs..0 S I D = A, V DS = V * 1 Input capacitance Ciss 0 pf V DS = V, V GS = 0, Output capacitance Coss 190 pf f = 1 MHz Reverse transfer capacitance Crss pf Turn-on delay time t d(on) ns I D = A, V GS = V, Rise time t r 0 ns R L = 1 Ω Turn-off delay time t d(off) 10 ns Fall time t f ns Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test V DF 0.9 V I F = 3 A, V GS = 0 t rr 160 ns I F = 3 A, V GS = 0, di F /dt = 0 A/µs 3

4 30 Power vs. Temperature Derating 0 Maximum Safe Operation Area Channel Dissipation Pch (W) Case Temperature T C ( C) Operation in this area is limited by R DS (on) 1 ms µs 0 µs PW = ms (1 Shot) DC Operation(T C = C) Ta = C ,000 Drain to Source Voltage V DS (V) V 3 1 Typical Output Characteristics V 3 V. V V GS = V 3 1 Typical Transfer Characteristics V DS = V 7 C T C = C C Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V)

5 Drain to Source Saturation Voltage V DS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage PulseTest 3 A A I D = 1 A Gate to Source Voltage V GS (V) Static Drain to Source on State Resistance R DS (on) (Ω) Static Drain to Source on State Resistance vs. Drain Current V GS = V V Static Drain to Source on State Resistance R DS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature 1, A V GS = V V GS = V I D = 3 A 3 A 1, A Case Temperature T C ( C) Forward Transfer Admittance yfs (S) Forward Transfer Admittance vs. Drain Current V DS = V C T C = C 7 C

6 Reverse Recovery Time t rr (ns) Body to Drain Diode Reverse Recovery Time di/dt = 0 A/µs, Ta = C V GS = Reverse Drain Current I DR (A) Capacitance C (pf) 1,000 0 Typical Capacitance vs. Drain to Source Voltage V GS = 0 f = 1 MHz Ciss Coss Crss Drain to Source Voltage V DS (V) Drain to Source Voltage V DS (V) V DS Dynamic Input Characteristics V DD = V 0 V 80 V V GS 0 V DD = 80 V 0 V I D = 3 A V Gate Charge Qg (nc) Gate to Source Voltage V GS (V) Switching Time t (ns) Switching Characteristics t d (off) V GS = V V DD = 30 V PW = µs, duty < 1 % t f 0 t r t d (on)

7 Reverse Drain Current I DR (A) 3 1 Reverse Drain Current vs. Source to Drain Voltage V 1 V V GS = 0, V Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance γ S (t) D = Shot Pulse Normalized Transient Thermal Impedance vs. Pulse Width θch c (t) = γ S (t) θch c θch c = 6. C/W, T C = C µ 0 µ 1 m m 0 m 1 Pulse Width PW (s) P DM PW T T C = C D = PW T Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T R L Vin % Wavewforms 90 % Vin = V 0 Ω. V DD = 30 V. Vout % 90 % td (on) tr 90 % td (off) % tf 7

8 Hitachi Code JEDEC EIAJ Weight (reference value) DPAK (L)-(1) Conforms 0. g Unit: mm. ± ± ± 0..3 ± 0.. ± ± ± ± ± ± ± 0..9 ± 0..9 ± ± 0.1

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10 This datasheet has been downloaded from: Datasheets for electronic components.