2SK1169, 2SK1170. Silicon N-Channel MOS FET. Application. Features. Outline. High speed power switching

Transcription

1 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 3 S 1. Gate. Drain (Flange) 3. Source

2 Absolute Maximum Ratings (Ta = 5 C) Item Symbol Ratings Unit Drain to source voltage SK1169 V DSS V SK Gate to source voltage V GSS ±30 V Drain current I D A Drain peak current I D(pulse) * 1 80 A Body to drain diode reverse drain current I DR A Channel dissipation Pch* 1 W Channel temperature Tch 1 C Storage temperature Tstg 55 to +1 C Notes: 1. PW µs, duty cycle 1%. Value at T C = 5 C

3 Electrical Characteristics (Ta = 5 C) Item Symbol Min Typ Max Unit Test conditions Drain to source SK1169 V (BR)DSS V I D = ma, V GS = 0 breakdown voltage SK Gate to source breakdown voltage V (BR)GSS ±30 V I G = ±0 µa, V DS = 0 Gate to source leak current I GSS ± µa V GS = ±5 V, V DS = 0 Zero gate voltage SK1169 I DSS µa V DS = 360 V, V GS = 0 drain current SK1170 V DS = 00 V, V GS = 0 Gate to source cutoff voltage V GS(off) V I D = 1 ma, V DS = V Static Drain to source SK1169 R DS(on) Ω I D = A, V GS = V * 1 on state resistance SK Forward transfer admittance yfs 16 S I D = A, V DS = V * 1 Input capacitance Ciss 800 pf V DS = V, V GS = 0, Output capacitance Coss 780 pf f = 1 MHz Reverse transfer capacitance Crss 90 pf Turn-on delay time t d(on) 3 ns I D = A, V GS = V, Rise time t r 115 ns R L = 3 Ω Turn-off delay time t d(off) 0 ns Fall time t f 90 ns Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test V DF V I F = A, V GS = 0 t rr 0 ns I F = A, V GS = 0, di F /dt = 0 A/µs 3

4 1 Power vs. Temperature Derating 0 Maximum Safe Operation Area Channel Dissipation Pch (W) Case Temperature T C ( C) µs PW = ms (1Shot) 1 ms DC Operation (T C = 5 C) µs Operation in this area is limited by R DS (on) 0.3 Ta = 5 C SK1170 SK ,000 Drain to Source Voltage V DS (V) 0 Typical Output Characteristics V 7 V 6 V 16 Typical Transfer Characteristics V DS = V 30 5 V V GS = V C 5 C T C = 5 C Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V)

5 Drain to Source Saturation Voltage V DS (on) (V) 8 6 Drain to Source Saturation Voltage vs. Gate to Source Voltage A A I D = 5 A Gate to Source Voltage V GS (V) Static Drain to Source on State Resistance R DS (on) (Ω) Static Drain to Source on State Resistance vs. Drain Current V GS = V 15 V Static Drain to Source on State Resistance R DS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature V GS = V I D = A A 5 A Case Temperature T C ( C) Forward Transfer Admittance yfs (S) 5 Forward Transfer Admittance vs. Drain Current V DS = V 5 C T C = 5 C 75 C

6 Reverse Recovery Time t rr (ns) 5,000,000 1, Body to Drain Diode Reverse Recovery Time di/dt = 0 A/µs, Ta = 5 C V GS = 0 Capacitance C (pf),000 1,000 0 Typical Capacitance vs. Drain to Source Voltage V GS = 0 f = 1 MHz Ciss Coss Crss Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS V DD = 0 V V 00 V V GS 0 I V DD = 00 V D = A V 0 V Gate Charge Qg (nc) Gate to Source Voltage V GS (V) Switching Time t (ns) t f t r Switching Characteristics t d (off) t d (on) V GS = V V DD = 30 V PW = µs, duty < 1%

7 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) V, V V GS = 0, V Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance γ S (t) D = Shot Pulse Normalized Transient Thermal Impedance vs. Pulse Width θch c (t) = γ S (t) θch c θch c = C/W,T C = 5 C µ 0 µ 1 m m 0 m 1 Pulse Width PW (s) P DM PW T T C = 5 C D = PW T Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T R L Vin % Wavewforms 90 % Vin = V Ω. V DD = 30 V. Vout % 90 % td (on) tr 90 % td (off) % tf 7

8 15.6 ± 0.3 φ3. ± ± ± Unit: mm Max ± ± ± ± ± ± ± 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P Conforms 5.0 g

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