PLx. Data Sheet. HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes. SOT-323 Package Lead Code Identification (top view) Description

Size: px

Start display at page:

Download "PLx. Data Sheet. HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes. SOT-323 Package Lead Code Identification (top view) Description"

Lillian Reed
6 years ago
Views:

HSMS-285x Sris Surfac Mount Zro ias Schottky tctor iods ata Sht scription vago s HSMS-285x family of zro bias Schottky dtctor diods has bn dsignd and optimizd for us in small signal (in <-20 dm)

1 HSMS-285x Sris Surfac Mount Zro ias Schottky tctor iods ata Sht scription vago s HSMS-285x family of zro bias Schottky dtctor diods has bn dsignd and optimizd for us in small signal (in <-20 dm) applications at frquncis blow 1.5 GHz. Thy ar idal for RF/I and RF Tag applications whr primary ( bias) powr is not availabl. Important Not: For dtctor applications with input powr lvls gratr than 20 dm, us th HSMS-282x sris at frquncis blow 4.0 GHz, and th HSMS-286x sris at frquncis abov 4.0 GHz. Th HSMS-285x sris IS NOT ROMMN for ths highr powr lvl applications. vailabl in various packag configurations, ths dtctor diods provid low cost solutions to a wid varity of dsign problms. vago s manufacturing tchniqus assur that whn two diods ar mountd into a singl packag, thy ar takn from adjacnt sits on th wafr, assuring th highst possibl dgr of match. in onnctions and ackag Marking 1 2 Nots: 1. ackag marking provids orintation and idntification. 2. S lctrical Spcifications for appropriat packag marking. SOT-2 / SOT-14 ackag ad od Idntification (top viw) SING x SRIS Faturs Surfac Mount SOT-2/SOT 14 ackags Miniatur SOT-2 and SOT 6 ackags High tction Snsitivity: up to 50 mv/µw at 915 MHz ow Flickr Nois: -162 dv/hz at 100 Hz ow FIT (Failur in Tim) Rat* Tap and Rl Options vailabl Matchd iods for onsistnt rformanc ttr Thrmal onductivity for Highr owr issipation ad-fr Option vailabl * For mor information s th Surfac Mount Schottky Rliability ata Sht. SOT-6 ackag ad od Idntification (top viw) UNONNT TRIO ttntion: Obsrv prcautions for handling lctrostatic snsitiv dvics. S Machin Modl (lass ) S Human ody Modl (lass 0) Rfr to vago pplication Not 004R: lctrostatic ischarg amag and ontrol. RIG QU SOT-2 ackag ad od Idntification (top viw) 1 2 #0 1 2 #2 SING SRIS UNONNT IR #5

2 SOT-2/SOT-14 lctrical Spcifications, T = +25, Singl iod Maximum Maximum art ackag Forward Rvrs Typical Numbr Marking ad Voltag akag, apacitanc HSMS- od od onfiguration V F (mv) I R (µ) T (pf) Singl Sris air [1,2] Unconnctd air [1,2] Tst I F = 0.1 m I F = 1.0 m V R =2V V R = 0.5 V to 1.0V onditions f = 1 MHz Nots: 1. VF for diods in pairs is 15.0 mv maximum at 1.0 m. 2. T for diods in pairs is 0.05 pf maximum at 0.5V. SOT-2/SOT-6 lctrical Spcifications, T = +25, Singl iod Maximum Maximum art ackag Forward Rvrs Typical Numbr Marking ad Voltag akag, apacitanc HSMS- od od onfiguration V F (mv) I R (µ) T (pf) Singl Sris air 285 Unconnctd Trio 285 ridg Quad Tst I F = 0.1 m I F = 1.0 m VR=2V V R = 0.5 V to 1.0V onditions f = 1 MHz Nots: 1. VF for diods in pairs is 15.0 mv maximum at 1.0 m. 2. T for diods in pairs is 0.05 pf maximum at 0.5V. RF lctrical Spcifications, T = +25, Singl iod art Numbr Typical Tangntial Snsitivity Typical Voltag Snsitivity Typical Vido HSMS- TSS f = 915 MHz g (mv / f = 915 MHz Rsistanc RV (KΩ) Tst Vido andwidth = 2 MHz owr in = 40 dm onditions Zro ias R = 100 KΩ, Zro ias Zro ias 2

3 bsolut Maximum Ratings, T = +25, Singl iod Symbol aramtr Unit bsolut Maximum [1] SOT-2/14 SOT-2/6 IV ak Invrs Voltag V T J Junction Tmpratur T STG Storag Tmpratur -65 to to 150 T O Oprating Tmpratur -65 to to 150 θ jc Thrmal Rsistanc [2] /W S WRNING: Handling rcautions Should Takn To void Static ischarg. Nots: 1. Opration in xcss of any on of ths conditions may rsult in prmannt damag to th dvic. 2. T = +25, whr T is dfind to b th tmpratur at th packag pins whr contact is mad to th circuit board. quivalnt inar ircuit Modl HSMS-285x chip R S R j j R S = sris rsistanc (s Tabl of SI paramtrs) j = junction capacitanc (s Tabl of SI paramtrs) R j = 8. X 10-5 nt I b + I s whr I b = xtrnally applid bias currnt in amps I s = saturation currnt (s tabl of SI paramtrs) T = tmpratur, K n = idality factor (s tabl of SI paramtrs) Not: To ffctivly modl th packagd HSMS-285x product, plas rfr to pplication Not N1124. SI aramtrs aramtr Units HSMS-285x V V.8 J0 pf 0.18 G V 0.69 I V -4 I S -6 N 1.06 R S Ω 25 (V J ) V 0.5 T (XTI) 2 M 0.5

4 Typical aramtrs, Singl iod I F FORWR URRNT (m) V F FORWR VOTG (V) VOTG OUT (mv) R = 100 KΩ 915 MHz IOS TST IN FIX-TUN FR4 MIROSTRI IRUITS OWR IN (dm) Figur 1. Typical Forward urrnt vs. Forward Voltag. Figur Output Voltag vs. Input owr at Zro ias. Figur. +25 xpandd Output Voltag vs. Input owr. S Figur 2. VOTG OUT (mv) R = 100 KΩ -40 OWR IN (dm) 915 MHz IOS TST IN FIX-TUN FR4 MIROSTRI IRUITS. -0 OUTUT VOTG (mv) FRQUNY = 2.45 GHz IN = -40 dm R = 100 KΩ 1. MSURMNTS M USING 1.1 FR4 MIROSTRI IRUIT TMRTUR () Figur 4. Output Voltag vs. Tmpratur. 4

5 pplications Information Introduction vago s HSMS 285x family of Schottky dtctor diods has bn dvlopd spcifically for low cost, high volum dsigns in small signal ( in < -20 dm) applications at frquncis blow 1.5 GHz. t highr frquncis, th biasd HSMS-286x family should b considrd. In larg signal powr or gain control applications ( in > 20 dm), th HSMS-282x and HSMS-286x products should b usd. Th HSMS-285x zro bias diod is not dsignd for larg signal dsigns. Schottky arrir iod haractristics Strippd of its packag, a Schottky barrir diod chip consists of a mtal-smiconductor barrir formd by dposition of a mtal layr on a smiconductor. Th most common of svral diffrnt typs, th passivatd diod, is shown in Figur 5, along with its quivalnt circuit. SSIVTION MT N-TY OR -TY I SSIVTION YR SHOTTKY JUNTION N-TY OR -TY SIION SUSTRT ROSS-STION OF SHOTTKY RRIR IO HI Figur 5. Schottky iod hip. j R S R j QUIVNT IRUIT R S is th parasitic sris rsistanc of th diod, th sum of th bondwir and ladfram rsistanc, th rsistanc of th bulk layr of silicon, tc. RF nrgy coupld into R S is lost as hat it dos not contribut to th rctifid output of th diod. J is parasitic junction capacitanc of th diod, controlld by th thicknss of th pitaxial layr and th diamtr of th Schottky contact. R j is th junction rsistanc of th diod, a function of th total currnt flowing through it. R j = 8. X 10-5 n T = R R V s I S + I b = at 25 I S + I b whr n = idality factor (s tabl of SI paramtrs) T = tmpratur in K I S = saturation currnt (s tabl of SI paramtrs) I b = xtrnally applid bias currnt in amps Th Hight of th Schottky arrir Th currnt-voltag charactristic of a Schottky barrir diod at room tmpratur is dscribd by th following quation: V - IR S I = I S (xp( ) - 1) On a smi-log plot (as shown in th vago catalog) th currnt graph will b a straight lin with invrs slop 2. X = volts pr cycl (until th ffct of R S is sn in a curv that droops at high currnt). ll Schottky diod curvs hav th sam slop, but not ncssarily th sam valu of currnt for a givn voltag. This is dtrmind by th saturation currnt, I S, and is rlatd to th barrir hight of th diod. Through th choic of p-typ or n typ silicon, and th slction of mtal, on can tailor th charactristics of a Schottky diod. arrir hight will b altrd, and at th sam tim J and R S will b changd. In gnral, vry low barrir hight diods (with high valus of I S, suitabl for zro bias applications) ar ralizd on p typ silicon. Such diods suffr from highr valus of R S than do th n typ. Thus, p-typ diods ar gnrally rsrvd for small signal dtctor applications (whr vry high valus of R V swamp out high R S ) and n-typ diods ar usd for mixr applications (whr high.o. driv lvls kp R V low). Masuring iod aramtrs Th masurmnt of th fiv lmnts which mak up th low frquncy quivalnt circuit for a packagd Schottky diod (s Figur 6) is a complx task. Various tchniqus ar usd for ach lmnt. Th task bgins with th lmnts of th diod chip itslf. R S FOR TH HSMS-285x SRIS = 0.08 pf = 2 nh j = 0.18 pf R S = 25 Ω R V = 9 KΩ R V Figur 6. quivalnt ircuit of a Schottky iod. j I S is a function of diod barrir hight, and can rang from picoamps for high barrir diods to as much as 5 µ for vry low barrir diods. 5

6 R S is prhaps th asist to masur accuratly. Th V-I curv is masurd for th diod undr forward bias, and th slop of th curv is takn at som rlativly high valu of currnt (such as 5 m). This slop is convrtd into a rsistanc R d. R S = R d I f R V and J ar vry difficult to masur. onsidr th impdanc of J = 0.16 pf whn masurd at 1 MHz it is approximatly 1 MΩ. For a wll dsignd zro bias Schottky, R V is in th rang of 5 to 25 KΩ, and it shorts out th junction capacitanc. Moving up to a highr frquncy nabls th masurmnt of th capacitanc, but it thn shorts out th vido rsistanc. Th bst masurmnt tchniqu is to mount th diod in sris in a 50 Ω microstrip tst circuit and masur its insrtion loss at low powr lvls (around -20 dm) using an H875 ntwork analyzr. Th rsulting display will appar as shown in Figur 7. tctor ircuits Whn bias is availabl, Schottky diod dtctor circuits can b usd to crat low cost RF and microwav rcivrs with a snsitivity of -55 dm to -57 dm. [1] Ths circuits can tak a varity of forms, but in th most simpl cas thy appar as shown in Figur 8. This is th basic dtctor circuit usd with th HSMS 285x family of diods. In th dsign of such dtctor circuits, th starting point is th quivalnt circuit of th diod, as shown in Figur 6. Of intrst in th dsign of th vido portion of th circuit is th diod s vido impdanc th othr four lmnts of th quivalnt circuit disappar at all rasonabl vido frquncis. In gnral, th lowr th diod s vido impdanc, th bttr th dsign. RF IN Z-MTH NTWORK VIO OUT INSRTION OSS (d) Ω 9 KΩ 50 Ω 0.16 pf 50 Ω FRQUNY (MHz) Figur 7. Masuring J and R V. 50 Ω 000 t frquncis blow 10 MHz, th vido rsistanc dominats th loss and can asily b calculatd from it. t frquncis abov 00 MHz, th junction capacitanc sts th loss, which plots out as a straight lin whn frquncy is plottd on a log scal. gain, calculation is straightforward. and ar bst masurd on th H875, with th diod trminating a 50 Ω lin on th input port. Th rsulting tabulation of S 11 can b put into a microwav linar analysis program having th fiv lmnt quivalnt circuit with R V, J and R S fixd. Th optimizr can thn adjust th valus of and until th calculatd S 11 matchs th masurd valus. Not that xtrm car must b takn to d mbd th parasitics of th 50 Ω tst fixtur. RF IN Z-MTH NTWORK Figur 8. asic tctor ircuits. VIO OUT Th situation is somwhat mor complicatd in th dsign of th RF impdanc matching ntwork, which includs th packag inductanc and capacitanc (which can b tund out), th sris rsistanc, th junction capacitanc and th vido rsistanc. Of ths fiv lmnts of th diod s quivalnt circuit, th four parasitics ar constants and th vido rsistanc is a function of th currnt flowing through th diod. R 26,000 V I S + I b whr I S = diod saturation currnt in µ I b = bias currnt in µ Saturation currnt is a function of th diod s dsign, [2] and it is a constant at a givn tmpratur. For th HSMS-285x sris, it is typically to 5 µ at 25. Saturation currnt sts th dtction snsitivity, vido rsistanc and input RF impdanc of th zro bias Schottky dtctor diod. Sinc no xtrnal bias is usd with th HSMS-285x sris, a singl transfr curv at any givn frquncy is obtaind, as shown in Figur 2. [1] vago pplication Not 92, Schottky arrir iod Vido tctors. 6

7 Th most difficult part of th dsign of a dtctor circuit is th input impdanc matching ntwork. For vry broadband dtctors, a shunt 60 Ω rsistor will giv good input match, but at th xpns of dtction snsitivity. Whn maximum snsitivity is rquird ovr a narrow band of frquncis, a ractiv matching ntwork is optimum. Such ntworks can b ralizd in ithr lumpd or distributd lmnts, dpnding upon frquncy, siz constraints and cost limitations, but crtain gnral dsign principals xist for all typs. [] sign work bgins with th RF impdanc of th HSMS-285x sris, which is givn in Figur 9. FRQUNY (GHz): Figur 11. Input Impdanc. Th input match, xprssd in trms of rturn loss, is givn in Figur GHz Figur 9. RF Impdanc of th HSMS 285x Sris at-40 dm. RTURN OSS (d) MHz tctor ircuit Figur 10 illustrats a simpl impdanc matching ntwork for a 915 MHz dtctor FRQUNY (GHz) Figur 12. Input Rturn oss. 0.9 RF INUT 65nH WITH = 0.050" NGTH = 0.065" WITH = 0.015" NGTH = 0.600" TRNSMISSION IN IMNSIONS R FOR MIROSTRI ON 0.02" THIK FR pf VIO OUT Figur MHz Matching Ntwork for th HSMS-285x Sris at Zro ias. 65 nh inductor rotats th impdanc of th diod to a point on th Smith hart whr a shunt inductor can pull it up to th cntr. Th short lngth of 0.065" wid microstrip lin is usd to mount th lad of th diod s SOT 2 packag. shortd shunt stub of lngth <λ/4 provids th ncssary shunt inductanc and simultanously provids th rturn circuit for th currnt gnratd in th diod. Th impdanc of this circuit is givn in Figur 11. s can b sn, th band ovr which a good match is achivd is mor than adquat for 915 MHz RFI applications. Voltag oublrs To this point, w hav rstrictd our discussion to singl diod dtctors. glanc at Figur 8, howvr, will lad to th suggstion that th two typs of singl diod dtctors b combind into a two diod voltag doublr [4] (known also as a full wav rctifir). Such a dtctor is shown in Figur 1. RF IN Z-MTH NTWORK Figur 1. Voltag oublr ircuit. VIO OUT [2] vago pplication Not 969, n Optimum Zro ias Schottky tctor iod. [] vago pplication Not 96, Impdanc Matching Tchniqus for Mixrs and tctors. 7

8 Such a circuit offrs svral advantags. First th voltag outputs of two diods ar addd in sris, incrasing th ovrall valu of voltag snsitivity for th ntwork (compard to a singl diod dtctor). Scond, th RF impdancs of th two diods ar addd in paralll, making th job of ractiv matching a bit asir. Such a circuit can asily b ralizd using th two sris diods in th HSMS-285. Flickr Nois Rfrnc to Figur 5 will show that thr is a junction of mtal, silicon, and passivation around th rim of th Schottky contact. It is in this thr-way junction that flickr nois [5] is gnratd. This nois can svrly rduc th snsitivity of a crystal vido rcivr utilizing a Schottky dtctor circuit if th vido frquncy is blow th nois cornr. Flickr nois can b substantially rducd by th limination of passivation, but such diods cannot b mountd in non-hrmtic packags. p typ silicon Schottky diods hav th last flickr nois at a givn valu of xtrnal bias (compard to n typ silicon or Gas). t zro bias, such diods can hav xtrmly low valus of flickr nois. For th HSMS-285x sris, th nois tmpratur ratio is givn in Figur 14. NOIS TMRTUR RTIO (d) ny Schottky junction, b it an RF diod or th gat of a MSFT, is rlativly dlicat and can b burnd out with xcssiv RF powr. Many crystal vido rcivrs usd in RFI (tag) applications find thmslvs in poorly controlld nvironmnts whr high powr sourcs may b prsnt. xampls ar th aras around airport and F radars, narby ham radio oprators, th vicinity of a broadcast band transmittr, tc. In such nvironmnts, th Schottky diods of th rcivr can b protctd by a dvic known as a limitr diod. [6] Formrly availabl only in radar warning rcivrs and othr high cost lctronic warfar applications, ths diods hav bn adaptd to commrcial and consumr circuits. vago offrs a complt lin of surfac mountabl IN limitr diods. Most notably, our HSM 4820 (SOT- 2) can act as a vry fast (nanoscond) powr-snsitiv switch whn placd btwn th antnna and th Schottky diod, shorting out th RF circuit tmporarily and rflcting th xcssiv RF nrgy back out th antnna. ssmbly Instructions SOT-2 Footprint rcommndd pad layout for th miniatur SOT- 2 (S-70) packag is shown in Figur 15 (dimnsions ar in inchs). This layout provids ampl allowanc for packag placmnt by automatd assmbly quipmnt without adding parasitics that could impair th prformanc. Figur 16 shows th pad layout for th six-lad SOT iod urnout FRQUNY (Hz) Figur 14. Typical Nois Tmpratur Ratio. Nois tmpratur ratio is th quotint of th diod s nois powr (xprssd in dv/hz) dividd by th nois powr of an idal rsistor of rsistanc R = R V. For an idal rsistor R, at 00 K, th nois voltag can b computd from which can b xprssd as v = X R volts/hz 20 log 10 v dv/hz imnsions in inchs Figur 15. Rcommndd ad ayout for vago s S70 /SOT 2 roducts Figur 16. Rcommndd ad ayout for vago's S70 6/SOT 6 roducts. Thus, for a diod with R V = 9 KΩ, th nois voltag is 12.2 nv/hz or -158 dv/hz. On th graph of Figur 14, dv/hz would rplac th zro on th vrtical scal to convrt th chart to on of absolut nois voltag vs. frquncy. [4] vago pplication Not 956-4, Schottky iod Voltag oublr. [5] vago pplication Not 965-, Flickr Nois in Schottky iods. [6] vago pplication Not 1050, ow ost, Surfac Mount owr imitrs. 8

9 SMT ssmbly Rliabl assmbly of surfac mount componnts is a complx procss that involvs many matrial, procss, and quipmnt factors, including: mthod of hating (.g., IR or vapor phas rflow, wav soldring, tc.) circuit board matrial, conductor thicknss and pattrn, typ of soldr alloy, and th thrmal conductivity and thrmal mass of componnts. omponnts with a low mass, such as th SOT packags, will rach soldr rflow tmpraturs fastr than thos with a gratr mass. vago s diods hav bn qualifid to th tim-tmpratur profil shown in Figur 17. This profil is rprsntativ of an IR rflow typ of surfac mount assmbly procss. ftr ramping up from room tmpratur, th circuit board with componnts attachd to it (hld in plac with soldr past) passs through on or mor prhat zons. Th prhat zons incras th tmpratur of th board and componnts to prvnt thrmal shock and bgin vaporating solvnts from th soldr past. Th rflow zon brifly lvats th tmpratur sufficintly to produc a rflow of th soldr. Th rats of chang of tmpratur for th ramp-up and cool-down zons ar chosn to b low nough to not caus dformation of th board or damag to componnts du to thrmal shock. Th maximum tmpratur in th rflow zon (T MX ) should not xcd 260. Ths paramtrs ar typical for a surfac mount assmbly procss for vago diods. s a gnral guidlin, th circuit board and componnts should b xposd only to th minimum tmpraturs and tims ncssary to achiv a uniform rflow of soldr. Tp Ramp-up tp ritical Zon T to Tp Tmpratur T Ts max Ts min ts rhat t Ramp-down 25 t 25 to ak Tim Figur 17. Surfac Mount ssmbly rofil. 9 ad-fr Rflow rofil Rcommndation (I/J J-ST-020) Rflow aramtr vrag ramp-up rat (iquidus Tmpratur (T S(max) to ak) rhat Tmpratur Min (T S(min) ) 150 Ts(max) to T Ramp-up Rat Tmpratur Max (T S(max) ) 200 Tim (min to max) (t S ) Tim maintaind abov: Tmpratur (T ) 217 ak Tmpratur (T ) Tim within 5 of actual ak tmpratur (t ) Ramp-down Rat Tim 25 to ak Tmpratur Tim (t ) ad-fr ssmbly / scond max sconds /scond max sconds / sconds 6 /scond max 8 minuts max Not 1: ll tmpraturs rfr to topsid of th packag, masurd on th packag body surfac

10 art Numbr Ordring Information No. of art Numbr vics ontainr HSMS-285x-TR2G " Rl HSMS-285x-TR1G 000 7" Rl HSMS-285x-K G 100 antistatic bag whr x = 0, 2, 5,,, and for HSMS-285x. ackag imnsions Outlin 2 (SOT-2) Outlin SOT-2 (S-70 ad) XXX 1 XXX 1 Nots: XXX-packag marking rawings ar not to scal SYMO IMNSIONS (mm) MIN MX Nots: XXX-packag marking rawings ar not to scal SYMO 1 1 IMNSIONS (mm) MIN. MX typical 1.0 typical typical 10

11 Outlin 14 (SOT-14) Outlin SOT-6 (S-70 6 ad) 2 1 XXX 1 1 H SYMO H 2 Q1 b c IMNSIONS (mm) MIN MX S Nots: XXX-packag marking rawings ar not to scal SYMO IMNSIONS (mm) MIN MX b 2 Q1 c vic Orintation For Outlins SOT-2, -2 R TO VIW 4 mm N VIW RRIR T 8 mm USR F IRTION OVR T Not: "" rprsnts packag marking cod. "" rprsnts dat cod. For Outlin SOT-14 For Outlin SOT-6 TO VIW 4 mm N VIW TO VIW 4 mm N VIW 8 mm 8 mm Not: "" rprsnts packag marking cod. "" rprsnts dat cod. Not: "" rprsnts packag marking cod. "" rprsnts dat cod. 11

12 Tap imnsions and roduct Orintation For Outlin SOT F W t1 1 9 MX Ko 8 MX 1.5 MX 0 0 VITY RFORTION RRIR T SRITION SYMO SIZ (mm) SIZ (INHS) NGTH WITH TH ITH OTTOM HO IMTR IMTR ITH OSITION WITH THIKNSS 0 0 K W t1.15 ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ISTN TWN NTRIN VITY TO RFORTION (WITH IRTION) VITY TO RFORTION (NGTH IRTION) F 2.50 ± ± ± ± For Outlin SOT F W 1 t 1 9 MX K 0 9 MX 0 0 VITY RFORTION RRIR T ISTN SRITION SYMO SIZ (mm) SIZ (INHS) NGTH WITH TH ITH OTTOM HO IMTR IMTR ITH OSITION WITH THIKNSS VITY TO RFORTION (WITH IRTION) VITY TO RFORTION (NGTH IRTION) 0 0 K W t1 F 2.19 ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ±

13 Tap imnsions and roduct Orintation For Outlins SOT-2, F W t 1 (RRIR T THIKNSS) 1 T t (OVR T THIKNSS) n K 0 n 0 0 VITY RFORTION RRIR T OVR T ISTN NG SRITION SYMO SIZ (mm) SIZ (INHS) NGTH WITH TH ITH OTTOM HO IMTR IMTR ITH OSITION WITH THIKNSS WITH T THIKNSS VITY TO RFORTION (WITH IRTION) VITY TO RFORTION (NGTH IRTION) 0 0 K ± ± ± ± ± ± ± 0.10 W 8.00 ± 0.0 t ± 0.02 F 2.50 ± ± 0.05 FOR SOT-2 (S70- ) n 8 MX FOR SOT-6 (S70-6 ) 5.4 ± 0.10 T t ± MX ± ± ± ± ± ± ± ± ± ± ± ± ± For product information and a complt list of distributors, plas go to our wb sit: vago, vago Tchnologis, and th logo ar tradmarks of vago Tchnologis in th Unitd Stats and othr countris. ata subjct to chang. opyright vago Tchnologis. ll rights rsrvd. Obsolts N V02-177N - July 1, 2008

Pin Connections and Package Marking. PLx

Pin Connections and Package Marking. PLx gilnt HSMS-285x Sris Surfac Mount Zro ias Schottky tctor iods ata Sht scription gilnt s HSMS-285x family of zro bias Schottky dtctor diods has bn dsignd and optimizd for us in small signal ( in