EECS C245 ME C218 Midterm Exam
|
|
- Jade Young
- 6 years ago
- Views:
Transcription
1 University of California at Berkeley College of Engineering EECS C245 ME C218 Midterm Eam Fall 2003 Prof. Roger T. Howe October 15, 2003 Dr. Thara Srinivasan Guidelines Your name: SOLUTIONS Circle your course: EE C245 ME C218 Your student ID: Closed book and notes; two pages (both sides) of your own notes are allowed. You may use a calculator. Do not unstaple the eam. Show all your work and reasoning on the eam in order to receive full or partial credit. Score Problem Points Possible Score Total 56 56! 1
2 1. Microfabrication and Miniaturization [8 pts.] Answer the following questions: a. [2 pts.] Of the following etching methods, circle the one which could be used to create deep trenches with vertical sidewalls on a Si {100} wafer: KOH DRIE sputtering XeF 2 b. [2 pts.] For each the following materials, list one method which can be used to deposit or apply a thin film onto a Si wafer: polysilicon aluminum photoresist PSG LPCVD sputtering, evaporation spin casting LPCVD c. [2 pts.] When doing the layout of a spring suspension for a MEMS accelerometer, you want to compare how much the beams will sag under their own weight for different dimensions. You begin by looking at how the gravitational force scales as the system is miniaturized, and find that gravitational force scales as [s ], where s is the length scale and = d. [2 pts.] Draw the (111) plane and the [110] direction on the aes below. z (0,0,1) (111) (0,1,0) y (1,0,0) [110] 2
3 2. Bulk Etching [12 pts.] The Si {100} wafer shown below has a patterned silicon nitride mask on its top surface, and an unpatterned nitride layer on the bottom surface. With TMAH, the etch selectivity between the {100} and {111} planes is 35:1, and the {100} etch rate is 1 µm/min. Assuming that the nitride layer and all other Si crystal planes are not etched, sketch the wafer cross section after 400 minutes of etching on the drawing at the bottom of the page. Also enter the following dimensions after etching: a. Si etch depth [2 pts.] 400 µm b. Si etch width at top [3 pts.] µm c. Si etch width at bottom [3 pts.] µm 850 µm A A 500 µm Nitride Silicon a. Si etch depth = etch time {100} etch rate = (400 min.)(1 µm/min) = 400 µm b. Si etch width at top s α d/35 y d β First calculate y using right triangle and : Sin = d/y; y = 1.225d Net calculate β using right triangle: Tan β = (d/35)/(1.225d) β =
4 Then using (β ) calculate s Tan (β+35.26) = s/d s = d If d = 400 µm, s = µm. Using 35.26, calculate : Tan (35.26) = /d = d = µm Lateral undercut = (s-) = µm Si etch width at top = (14.20) = µm Partial credit was given for a correct drawing, correct β, and also if the 1/35 etch rate for {111} vs {100} was used on a direction not perpendicular to the (111) plane. c. Si etch width at bottom = = 850 2(282.8) = µm Partial credit was also given for an answer of 0 if the rest of the dimensions were listed correctly, since silicon etching does not actually reach the very bottom of wafer. d. [4 pts.] Sketch the cross section after 400 minutes of etching. Drawing should include lateral undercut, sidewalls which make roughly 54.7 angles to the horizontal (100) plane, and a flat bottom.. 4
5 3. Surface Micromachining [12 pts] The layout of the lateral resonator shown below is sent to the MUMPS foundry to be fabricated. A A DIMPLE ANCHOR1 POLY1 POLY0 The MUMPS film thicknesses are: Silicon nitride 0.6 µm POLY0 0.5 µm DIMPLE depth 0.75 µm Oide1 2 µm POLY1 2 µm The order in which the masks are used is as follows: POLY0 DIMPLE Oide1 POLY1 5
6 Draw the following cross sections (A-A ) on the substrates given below using the provided guide lines: A A a) [6 pts.] After the process has reached the Oide1 etching for ANCHOR1 but before photoresist removal: PR Oide1 POLY0 Silicon nitride Silicon substrate Oide1 was intended to be etched, but full credit was given if PR was only patterned. POLY0 was not visible in the eroed eams but there weren t any features in that layer anyway, so there should be no etching. Silicon substrate (etra in case you need it) b) [6 pts.] Before release: POLY1 Oide1 POLY0 Silicon nitride Silicon substrate Silicon substrate (etra in case you need it) 6
7 4. MEMS suspension analysis [12 points] anchor rigid truss 100 µm long; cross section is 2 µm 2 µm 100 µm long; cross section is 2 µm 2 µm rigid block (a) [3 pts.] What is the numerical value of the spring constant k (units: N/m) of the simple one-sided suspension on the left? Given: polysilicon structural material with E = 160 GPa. In case it s not on one of your formula sheets, the spring constant of a cantilever of 3 EWh length L c, width W, and bending thickness h is given by k =. 3 L 4 c (b) [3 pts.] What is the numerical value of the spring constant k (units: N/m) of the folded one-sided suspension on the right? 7
8 (c) [3 pts.] You re unsatisfied with these designs, so you turn to a double-folded, onesided suspension. What is the numerical spring constant k (units: N/m) of this suspension? rigid trusses 100 µm long; cross section is 2 µm 2 µm (d) [3 pts.] What is the resonant frequency in khz of the lateral resonator with the simple one-sided suspension from part (a)? Given: the density of polysilicon is 2330 kg/m 3 and the area of the shuttle and comb fingers is 700 µm 2 ; you can neglect the effective mass of the suspension beams. 8
9 5. Electrostatic Actuators [12 points] A lower electrode gap, g o substrate + - V A (a) [4 pts.] The lower electrode is connected to a voltage supply of value V = 2 V, while the suspended plate is grounded. The gap between the lower electrode and the plate is g o = 1 µm. Find the area A of the lower electrode in µm 2 such that the electrostatic force on the plate is 100 nn. (b) [4 pts.] What is the electrical spring constant k e in µn/µm for the applied voltage and lower electrode area you found in part (a)? If you were unable to solve part (a), you can use A = 4000 µm 2 for this part. 9
10 A z A + - V f In a different structure, we would like to use levitation electrodes around the perimeter of the suspended plate to apply vertical force in the z direction to the plate. The capacitance variation for one electrode (shown in cross section above) is found by finite-element analysis and plotted on the graph below. C(z) (af/finger) 25 C(z) = 20 af (14 af/µm 2 )(z 0.6 µm) z (µm) (c) [4 pts.] For a voltage V f = 5 V, find the levitation force in nn, given that the vertical position of the plate is z = 0. 10
EE C247B / ME C218 INTRODUCTION TO MEMS DESIGN SPRING 2016 C. NGUYEN PROBLEM SET #4
Issued: Wednesday, March 4, 2016 PROBLEM SET #4 Due: Monday, March 14, 2016, 8:00 a.m. in the EE C247B homework box near 125 Cory. 1. This problem considers bending of a simple cantilever and several methods
More information1. Narrative Overview Questions
Homework 4 Due Nov. 16, 010 Required Reading: Text and Lecture Slides on Downloadable from Course WEB site: http://courses.washington.edu/overney/nme498.html 1. Narrative Overview Questions Question 1
More informationUniversity of California at Berkeley College of Engineering Dept. of Electrical Engineering and Computer Sciences. EECS 40 Midterm II
University of California at Berkeley College of Engineering Dept. of Electrical Engineering and Computer Sciences EECS 40 Midterm II Spring 2001 Prof. Roger T. Howe April 11, 2001 Name: Last, First Student
More informationb. The displacement of the mass due to a constant acceleration a is x=
EE147/247A Final, Fall 2013 Page 1 /35 2 /55 NO CALCULATORS, CELL PHONES, or other electronics allowed. Show your work, and put final answers in the boxes provided. Use proper units in all answers. 1.
More informationY. C. Lee. Micro-Scale Engineering I Microelectromechanical Systems (MEMS)
Micro-Scale Engineering I Microelectromechanical Systems (MEMS) Y. C. Lee Department of Mechanical Engineering University of Colorado Boulder, CO 80309-0427 leeyc@colorado.edu January 15, 2014 1 Contents
More informationEE C247B / ME C218 INTRODUCTION TO MEMS DESIGN SPRING 2014 C. Nguyen PROBLEM SET #4
Issued: Wednesday, Mar. 5, 2014 PROBLEM SET #4 Due (at 9 a.m.): Tuesday Mar. 18, 2014, in the EE C247B HW box near 125 Cory. 1. Suppose you would like to fabricate the suspended cross beam structure below
More informationEE C245 - ME C218 Introduction to MEMS Design Fall Today s Lecture
EE C45 - ME C18 Introduction to MEMS Design Fall 003 Roger Howe and Thara Srinivasan Lecture 11 Electrostatic Actuators II Today s Lecture Linear (vs. displacement) electrostatic actuation: vary overlap
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2007
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 12: Mechanics
More informationFour Degrees-of-Freedom Micromachined Gyroscope
Microsystems Laboratory Technical Report Four Degrees-of-Freedom Micromachined Gyroscope Cenk Acar 23 October 2001 Technical Report No: MSL-01003 cfl2001 Cenk Acar Contents Contents List of Figures Abstract
More informationUNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Professor Oldham Fall 1999
UNIVERSITY OF CLIFORNI College of Engineering Department of Electrical Engineering and Computer Sciences Professor Oldham Fall 1999 EECS 40 FINL EXM 13 December 1999 Name: Last, First Student ID: T: Kusuma
More informationEE C245 / ME C218 INTRODUCTION TO MEMS DESIGN FALL 2009 PROBLEM SET #7. Due (at 7 p.m.): Thursday, Dec. 10, 2009, in the EE C245 HW box in 240 Cory.
Issued: Thursday, Nov. 24, 2009 PROBLEM SET #7 Due (at 7 p.m.): Thursday, Dec. 10, 2009, in the EE C245 HW box in 240 Cory. 1. Gyroscopes are inertial sensors that measure rotation rate, which is an extremely
More informationEE C247B / ME C218 INTRODUCTION TO MEMS DESIGN SPRING 2014 PROBLEM SET #1
Issued: Thursday, Jan. 30, 2014 PROBLEM SET #1 Due (at 9 a.m.): Wednesday Feb. 12, 2014, in the EE C247B HW box near 125 Cory. This homework assignment is intended to give you some early practice playing
More informationEE C245 ME C218 Introduction to MEMS Design
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 23: Electrical
More informationEE C245 / ME C218 INTRODUCTION TO MEMS DESIGN FALL 2011 C. Nguyen PROBLEM SET #7. Table 1: Gyroscope Modeling Parameters
Issued: Wednesday, Nov. 23, 2011. PROBLEM SET #7 Due (at 7 p.m.): Thursday, Dec. 8, 2011, in the EE C245 HW box in 240 Cory. 1. Gyroscopes are inertial sensors that measure rotation rate, which is an extremely
More informationEtching Issues - Anisotropy. Dry Etching. Dry Etching Overview. Etching Issues - Selectivity
Etching Issues - Anisotropy Dry Etching Dr. Bruce K. Gale Fundamentals of Micromachining BIOEN 6421 EL EN 5221 and 6221 ME EN 5960 and 6960 Isotropic etchants etch at the same rate in every direction mask
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2007
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 11: Bulk
More informationEE 143 MICROFABRICATION TECHNOLOGY FALL 2014 C. Nguyen PROBLEM SET #7. Due: Friday, Oct. 24, 2014, 8:00 a.m. in the EE 143 homework box near 140 Cory
Issued: Tuesday, Oct. 14, 2014 PROBLEM SET #7 Due: Friday, Oct. 24, 2014, 8:00 a.m. in the EE 143 homework box near 140 Cory Electroplating 1. Suppose you want to fabricate MEMS clamped-clamped beam structures
More informationEE C245 ME C218 Introduction to MEMS Design
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 21: Gyros
More informationEE 527 MICROFABRICATION. Lecture 24 Tai-Chang Chen University of Washington
EE 527 MICROFABRICATION Lecture 24 Tai-Chang Chen University of Washington EDP ETCHING OF SILICON - 1 Ethylene Diamine Pyrocatechol Anisotropy: (100):(111) ~ 35:1 EDP is very corrosive, very carcinogenic,
More informationEE C247B ME C218 Introduction to MEMS Design Spring 2016
EE C47B ME C18 Introduction to MEMS Design Spring 016 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 9470 Lecture EE C45:
More informationDevelopment and Characterization of High Frequency Bulk Mode Resonators
Excerpt from the Proceedings of the COMSOL Conference 008 Hannover Development and Characterization of High Frequency Bulk Mode Resonators Hossein Pakdast 1*, Zachary James Davis 1 1 DTU Nanotech, Technical
More informationEE C245 - ME C218 Introduction to MEMS Design Fall Today s Lecture
EE C45 - ME C8 Introduction to MEMS Design Fall 3 Roger Howe and Thara Srinivasan Lecture 9 Energy Methods II Today s Lecture Mechanical structures under driven harmonic motion develop analytical techniques
More informationDecember 1999 FINAL TECHNICAL REPORT 1 Mar Mar 98
REPORT DOCUMENTATION PAGE AFRL-SR- BL_TR " Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instruct the collection
More informationRegents of the University of California
Deep Reactive-Ion Etching (DRIE) DRIE Issues: Etch Rate Variance The Bosch process: Inductively-coupled plasma Etch Rate: 1.5-4 μm/min Two main cycles in the etch: Etch cycle (5-15 s): SF 6 (SF x+ ) etches
More informationDesign and characterization of in-plane MEMS yaw rate sensor
Sādhanā Vol. 34, Part 4, August 2009, pp. 633 642. Printed in India Design and characterization of in-plane MEMS yaw rate sensor K P VENKATESH, NISHAD PATIL, ASHOK KUMAR PANDEY and RUDRA PRATAP CranesSci
More informationEE C245 ME C218 Introduction to MEMS Design
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 ecture 15: Beam
More informationIntroduction to Microeletromechanical Systems (MEMS) Lecture 9 Topics. MEMS Overview
Introduction to Microeletromechanical Systems (MEMS) Lecture 9 Topics MicroOptoElectroMechanical Systems (MOEMS) Grating Light Valves Corner Cube Reflector (CCR) MEMS Light Modulator Optical Switch Micromirrors
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2007
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 17: Energy
More informationMidterm 2 PROBLEM POINTS MAX
Midterm 2 PROBLEM POINTS MAX 1 30 2 24 3 15 4 45 5 36 1 Personally, I liked the University; they gave us money and facilities, we didn't have to produce anything. You've never been out of college. You
More informationUNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Fall Exam 1
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 143 Fall 2008 Exam 1 Professor Ali Javey Answer Key Name: SID: 1337 Closed book. One sheet
More informationMEMS Mechanical Fundamentals
ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING MEMS Mechanical Fundamentals Dr. Lynn Fuller webpage: http://people.rit.edu/lffeee Electrical and Microelectronic Engineering Rochester Institute
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2012
EE C245 ME C218 Introduction to MEMS Design Fall 2012 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture EE C245:
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2010
EE C245 ME C218 Introduction to MEMS Design Fall 2010 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture EE C245:
More informationUNIVERSITY OF CALIFORNIA. College of Engineering. Department of Electrical Engineering and Computer Sciences. Professor Ali Javey.
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EE 143 Professor Ali Javey Spring 2009 Exam 2 Name: SID: Closed book. One sheet of notes is allowed.
More informationUNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EECS 40 Spring 2000 Introduction to Microelectronic Devices Prof. King MIDTERM EXAMINATION
More informationSUPPLEMENTARY INFORMATION
In the format provided by the authors and unedited. DOI: 10.1038/NPHOTON.2016.254 Measurement of non-monotonic Casimir forces between silicon nanostructures Supplementary information L. Tang 1, M. Wang
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2007
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 15: Beam
More informationInstitute for Electron Microscopy and Nanoanalysis Graz Centre for Electron Microscopy
Institute for Electron Microscopy and Nanoanalysis Graz Centre for Electron Microscopy Micromechanics Ass.Prof. Priv.-Doz. DI Dr. Harald Plank a,b a Institute of Electron Microscopy and Nanoanalysis, Graz
More informationUNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm 2 Name: SID: Closed book. Two sheets of notes are
More informationMidterm I - Solutions
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Spring 2008 Professor Chenming Hu Midterm I - Solutions Name: SID: Grad/Undergrad: Closed
More informationEE C245 ME C218 Introduction to MEMS Design
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 22: Capacitive
More informationReactive Ion Etching (RIE)
Reactive Ion Etching (RIE) RF 13.56 ~ MHz plasma Parallel-Plate Reactor wafers Sputtering Plasma generates (1) Ions (2) Activated neutrals Enhance chemical reaction 1 2 Remote Plasma Reactors Plasma Sources
More informationEE C245 ME C218 Introduction to MEMS Design
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 16: Energy
More information2D BEAM STEERING USING ELECTROSTATIC AND THERMAL ACTUATION FOR NETWORKED CONTROL ABSTRACT
D BEAM STEERING USING ELECTROSTATIC AND THERMAL ACTUATION FOR NETWORKED CONTROL Jitendra Makwana 1, Stephen Phillips 1, Lifeng Wang 1, Nathan Wedge, and Vincenzo Liberatore 1 Department of Electrical Engineering,
More informationMake sure the exam paper has 7 pages (including cover page) + 3 pages of data for reference
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences Fall 2005 EE143 Midterm Exam #1 Family Name First name SID Signature Make sure the exam paper
More information4FNJDPOEVDUPS 'BCSJDBUJPO &UDI
2010.5.4 1 Major Fabrication Steps in CMOS Process Flow UV light oxygen Silicon dioxide Silicon substrate Oxidation (Field oxide) photoresist Photoresist Coating Mask exposed photoresist Mask-Wafer Exposed
More informationLaterally Driven Polysilicon Resonant Microstructures
Laterally Driven Polysilicon Resonant Microstructures William C. Tang, Tu-Cuong H. Nguyen, and Roger T. Howe University of California at Berkeley Department of Electrical Engineering and Computer Sciences
More informationContactless Excitation of MEMS Resonant Sensors by Electromagnetic Driving
Presented at the COMSOL Conference 2009 Milan University of Brescia Department of Electronics for Automation Contactless Excitation of MEMS Resonant Sensors by Electromagnetic Driving Marco Baù, VF V.
More information2.76/2.760 Multiscale Systems Design & Manufacturing
2.76/2.760 Multiscale Systems Design & Manufacturing Fall 2004 MOEMS Devices for Optical communications system Switches and micromirror for Add/drops Diagrams removed for copyright reasons. MOEMS MEMS
More informationResistance Thermometry based Picowatt-Resolution Heat-Flow Calorimeter
Resistance Thermometry based Picowatt-Resolution Heat-Flow Calorimeter S. Sadat 1, E. Meyhofer 1 and P. Reddy 1, 1 Department of Mechanical Engineering, University of Michigan, Ann Arbor, 48109 Department
More informationDEVELOPMENT OF A MEMS REPULSIVE ACTUATOR FOR LARGE OUT-OF-PLANE FORCE
DEVELOPMENT OF A MEMS REPULSIVE ACTUATOR FOR LARGE OUT-OF-PLANE FORCE by Imran Khan A thesis submitted in conformity with the requirements for the degree of Masters of Applied Science Graduate Department
More informationEtching: Basic Terminology
Lecture 7 Etching Etching: Basic Terminology Introduction : Etching of thin films and sometimes the silicon substrate are very common process steps. Usually selectivity, and directionality are the first
More informationSUPPLEMENTARY NOTES Supplementary Note 1: Fabrication of Scanning Thermal Microscopy Probes
SUPPLEMENTARY NOTES Supplementary Note 1: Fabrication of Scanning Thermal Microscopy Probes Fabrication of the scanning thermal microscopy (SThM) probes is summarized in Supplementary Fig. 1 and proceeds
More informationEE C245 ME C218 Introduction to MEMS Design
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 19: Resonance
More informationETCHING Chapter 10. Mask. Photoresist
ETCHING Chapter 10 Mask Light Deposited Substrate Photoresist Etch mask deposition Photoresist application Exposure Development Etching Resist removal Etching of thin films and sometimes the silicon substrate
More informationFinal EE290G Intro to MEMS 12/16/98
Final EE290G Intro to MEMS 12/16/98 Name SID 1. (20 points) Using poly1 in the MCNC/MUMPS process: Fx Fy L b L a x y cxx = c yx c xy c yy Fx F y (1) (a) Calculate c xy, the constant relating the force
More informationDesign and Simulation of Comb Drive Capacitive Accelerometer by Using MEMS Intellisuite Design Tool
Design and Simulation of Comb Drive Capacitive Accelerometer by Using MEMS Intellisuite Design Tool Gireesh K C 1, Harisha M 2, Karthick Raj M 3, Karthikkumar M 4, Thenmoli M 5 UG Students, Department
More informationE05 Resonator Design
POLITECNICO DI MILANO MSC COURSE - MEMS AND MICROSENSORS - 2018/2019 E05 Resonator Design Giorgio Mussi 16/10/2018 In this class we will learn how an in-plane MEMS resonator handles process variabilities,
More informationUNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Professor Chenming Hu.
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Spring 2009 Professor Chenming Hu Midterm I Name: Closed book. One sheet of notes is
More informationOutline. 4 Mechanical Sensors Introduction General Mechanical properties Piezoresistivity Piezoresistive Sensors Capacitive sensors Applications
Sensor devices Outline 4 Mechanical Sensors Introduction General Mechanical properties Piezoresistivity Piezoresistive Sensors Capacitive sensors Applications Introduction Two Major classes of mechanical
More informationMEMS Resonators That Are Robust to Process-Induced Feature Width Variations
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 11, NO. 5, OCTOBER 2002 505 MEMS Resonators That Are Robust to Process-Induced Feature Width Variations Rong Liu, Brad Paden, Senior Member, IEEE, and Kimberly
More informationFoundations of MEMS. Chang Liu. McCormick School of Engineering and Applied Science Northwestern University. International Edition Contributions by
Foundations of MEMS Second Edition Chang Liu McCormick School of Engineering and Applied Science Northwestern University International Edition Contributions by Vaishali B. Mungurwadi B. V. Bhoomaraddi
More informationEE143 LAB. Professor N Cheung, U.C. Berkeley
EE143 LAB 1 1 EE143 Equipment in Cory 218 2 Guidelines for Process Integration * A sequence of Additive and Subtractive steps with lateral patterning Processing Steps Si wafer Watch out for materials compatibility
More informationDesign and Analysis of dual Axis MEMS Capacitive Accelerometer
International Journal of Electronics Engineering Research. ISSN 0975-6450 Volume 9, Number 5 (2017) pp. 779-790 Research India Publications http://www.ripublication.com Design and Analysis of dual Axis
More informationFabrication and performance of d 33 -mode lead-zirconate-titanate (PZT) MEMS accelerometers
Fabrication and performance of d 33 -mode lead-zirconate-titanate (PZT) MEMS accelerometers H. G. Yu, R. Wolf*,K. Deng +,L.Zou +, S. Tadigadapa and S. Trolier-McKinstry* Department of Electrical Engineering,
More informationDESIGN AND FABRICATION OF THE MICRO- ACCELEROMETER USING PIEZOELECTRIC THIN FILMS
DESIGN AND FABRICATION OF THE MICRO- ACCELEROMETER USING PIEZOELECTRIC THIN FILMS JYH-CHENG YU and FU-HSIN LAI Department of Mechanical Engineering National Taiwan University of Science and Technology
More informationDesign and Analysis of a CMOS Based MEMS Accelerometer
Design and Analysis of a CMOS Based MEMS Accelerometer Matthew A. Zeleznik Microelectronic Engineering Rochester Institute of Technology Rochester, NY 14623 Abstract Traditionally, microelectromechanical
More informationMEMS Tuning-Fork Gyroscope Mid-Term Report Amanda Bristow Travis Barton Stephen Nary
MEMS Tuning-Fork Gyroscope Mid-Term Report Amanda Bristow Travis Barton Stephen Nary Abstract MEMS based gyroscopes have gained in popularity for use as rotation rate sensors in commercial products like
More informationEE C245 - ME C218. Fall 2003
EE C45 - E C8 Introduction to ES Design Fall Roger Howe and Thara Srinivasan ecture 9 Energy ethods II Today s ecture echanical structures under driven harmonic motion develop analytical techniques for
More informationAbstract. 1 Introduction
In R. A. Adey et al., eds., Simulation and Design of Microsystems and Microstructures (Proceedings of the 1st International Conference on Simulation and Design of Microsystems and Microstructures), Computational
More informationMODAL ANALYSIS OF MEMS GYROSCOPIC SENSORS
MODAL ANALYSIS OF MEMS GYROSCOPIC SENSORS by Marc Burnie A thesis submitted to the Department of Mechanical & Materials Engineering In conformity with the requirements for the degree of Master of Applied
More informationCHAPTER 2 ANALYTICAL MODELING FOR PULL-IN VOLTAGE OF CANTILEVER FOR WIDE RANGE OF DIMENSIONS
34 CHAPTER ANALYTICAL MODELING FOR PULL-IN VOLTAGE OF CANTILEVER FOR WIDE RANGE OF DIMENSIONS.1 INTRODUCTION Electrostatic actuation is one of the methods to obtain actuation in MEMS. This method of actuation
More informationTime-of-Flight Flow Microsensor using Free-Standing Microfilaments
07-Rodrigues-V4 N2-AF 19.08.09 19:41 Page 84 Time-of-Flight Flow Microsensor using Free-Standing Microfilaments Roberto Jacobe Rodrigues 1,2, and Rogério Furlan 3 1 Center of Engineering and Social Sciences,
More information20 MHz Free-Free Beam Microelectromechanical Filter with High Quality Factor
20 MHz Free-Free Beam Microelectromechanical Filter with High Quality Factor Group 4 Yang Lu 1, Tianfeng Lu 1, Han Wang 2, Zichen Tang 2 1 Department of Material Science and Engineering 2 Department of
More informationSINGLE-STEP ASSEMBLY OF COMPLEX 3-D MICROSTRUCTURES
SINGLE-STEP ASSEMBLY OF COMPLEX 3-D MICROSTRUCTURES Elliot E. Hui, Roger T. Howe, and M. Steven Rodgers* Berkeley Sensor & Actuator Center, University of California, Berkeley, CA 94720-1774, USA *Intelligent
More informationPiezoresistive Sensors
Piezoresistive Sensors Outline Piezoresistivity of metal and semiconductor Gauge factor Piezoresistors Metal, silicon and polysilicon Close view of the piezoresistivity of single crystal silicon Considerations
More informationSelf-study problems and questions Processing and Device Technology, FFF110/FYSD13
Self-study problems and questions Processing and Device Technology, FFF110/FYSD13 Version 2016_01 In addition to the problems discussed at the seminars and at the lectures, you can use this set of problems
More informationToo many answers to list.
ECE/ME 9 Spring 08, Prof. Feinerman, Test # solutions 5/6/08, Closed Book and Closed Notes Undergraduates x 8.5, σ 1.0, Graduates x 78.5, σ 1. Element Molecular weight, grams Atomic number Density, gm/cc
More informationKurukshetra University INDIA
American International Journal of Research in Science, Technology, Engineering & Mathematics Available online at http://www.iasir.net ISSN (Print): 2328-3491, ISSN (Online): 2328-3580, ISSN (CD-ROM): 2328-3629
More informationAn Introduction to Surface-Micromachining
An Introduction to Surface-Micromachining An Introduction to S urface-micromachining by Robert W. Johnstone M. Parameswaran Engineering Science Simon Fraser University Kluwer Academic Publishers Boston/DordrechtiLondon
More informationEE115C Winter 2017 Digital Electronic Circuits. Lecture 3: MOS RC Model, CMOS Manufacturing
EE115C Winter 2017 Digital Electronic Circuits Lecture 3: MOS RC Model, CMOS Manufacturing Agenda MOS Transistor: RC Model (pp. 104-113) S R on D CMOS Manufacturing Process (pp. 36-46) S S C GS G G C GD
More informationA THERMAL ACTUATOR DESIGN USING TORSIONAL LOADING TO ACHIEVE OUT-OF-PLANE MOTION AND FORCE TRANSMISSION
A THERMAL ACTUATOR DESIGN USING TORSIONAL LOADING TO ACHIEVE OUT-OF-PLANE MOTION AND FORCE TRANSMISSION Anargyros Panayotopoulos MEMS Division, Mechanical Engineering Dept. University of California, Berkeley,
More informationSingle- and dual-axis lateral capacitive accelerometers based on CMOS-MEMS technology
UNIVERSITY OF OSLO Department of informatics Single- and dual-axis lateral capacitive accelerometers based on CMOS-MEMS technology Master thesis Jia Yu Chen April 30, 2010 Abstract In order to have a
More informationLecture 0: Introduction
Lecture 0: Introduction Introduction q Integrated circuits: many transistors on one chip q Very Large Scale Integration (VLSI): bucketloads! q Complementary Metal Oxide Semiconductor Fast, cheap, low power
More informationCOMSOL Simulation of a Dualaxis MEMS Accelerometer with T-shape Beams
COMSOL Simulation of a Dualaxis MEMS Accelerometer with T-shape Beams Ce Zheng 1, Xingguo Xiong 2, Junling Hu 3, 1 Department of Electrical Engineering, University of Bridgeport, Bridgeport, CT, USA 2
More informationAC : MEMS FABRICATION AS A MULTIDISCIPLINARY LABORATORY
AC 2007-524: MEMS FABRICATION AS A MULTIDISCIPLINARY LABORATORY Todd Kaiser, Montana State University Andrew Lingley, Montana State University Matt Leone, Montana State University Brad Pierson, Montana
More informationHKUST. MATH1013 Calculus IB. Directions:
HKUST MATH101 Calculus IB Midterm Eamination (Sample Version) Name: Student ID: Lecture Section: Directions: This is a closed book eamination. No Calculator is allowed in this eamination. DO NOT open the
More informationOptimizing the Performance of MEMS Electrostatic Comb Drive Actuator with Different Flexure Springs
Optimizing the Performance of MEMS Electrostatic Comb Drive Actuator with Different Flexure Springs Shefali Gupta 1, Tanu Pahwa 1, Rakesh Narwal 1, B.Prasad 1, Dinesh Kumar 1 1 Electronic Science Department,
More informationMake sure the exam paper has 9 pages (including cover page) + 3 pages of data for reference
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences Spring 2006 EE143 Midterm Exam #1 Family Name First name SID Signature Make sure the exam paper
More informationSENSOR DEVICES MECHANICAL SENSORS
SENSOR DEVICES MECHANICAL SENSORS OUTLINE 4 Mechanical Sensors Introduction General mechanical properties Piezoresistivity Piezoresistive sensors Capacitive sensors Applications INTRODUCTION MECHANICAL
More information6.777J/2.732J Design and Fabrication of Microelectromechanical Devices Spring Term Massachusetts Institute of Technology
6.777J/.7J Design and Fabrication of Microelectromecanical Devices Spring Term 007 Massacusetts Institute of Tecnology PROBLEM SET 4 SOLUTIONS (5 pts) Issued /7/07 Due /6/07 Problem 6.5 (5 pts): Te in-plane
More informationPHYSICAL DESIGN FOR SURFACE-MICROMACHINED MEMS
In Proceedings of the 5th ACM/SIGDA Physical Design Workshop, Reston, VA USA, April 15-17, 1996, pp. 53-60. PHYSICAL DESIGN FOR SURFACE-MICROMACHINED MEMS Gary K. Fedder * and Tamal Mukherjee Department
More informationOptimizing micromechanical force detectors for measuring. magnetization at high magnetic fields
Abstract Optimizing micromechanical force detectors for measuring magnetization at high magnetic fields Jeremy Paster University of Florida July 30, 2008 MEMS devices prove to be advantageous in magnetometry.
More informationLecture 150 Basic IC Processes (10/10/01) Page ECE Analog Integrated Circuits and Systems P.E. Allen
Lecture 150 Basic IC Processes (10/10/01) Page 1501 LECTURE 150 BASIC IC PROCESSES (READING: TextSec. 2.2) INTRODUCTION Objective The objective of this presentation is: 1.) Introduce the fabrication of
More informationUNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Professor Ali Javey. Fall 2009.
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EE143 Professor Ali Javey Fall 2009 Exam 1 Name: SID: Closed book. One sheet of notes is allowed.
More informationnmos IC Design Report Module: EEE 112
nmos IC Design Report Author: 1302509 Zhao Ruimin Module: EEE 112 Lecturer: Date: Dr.Zhao Ce Zhou June/5/2015 Abstract This lab intended to train the experimental skills of the layout designing of the
More informationMEAM 550 Modeling and Design of MEMS Spring Solution to homework #4
Solution to homework #4 Problem 1 We know from the previous homework that the spring constant of the suspension is 14.66 N/m. Let us now compute the electrostatic force. l g b p * 1 1 ε wl Co-energy =
More informationA Vertical Electrostatic Actuator with Extended Digital Range via Tailored Topology
A Vertical Electrostatic Actuator with Extended Digital Range via Tailored Topology Yanhang Zhang and Martin L. Dunn Department of Mechanical Engineering University of Colorado at Boulder Boulder, CO 80309
More informationCHAPTER 5 FIXED GUIDED BEAM ANALYSIS
77 CHAPTER 5 FIXED GUIDED BEAM ANALYSIS 5.1 INTRODUCTION Fixed guided clamped and cantilever beams have been designed and analyzed using ANSYS and their performance were calculated. Maximum deflection
More informationToday s Presentation
Today s Presentation MEMS Comb Drive Actuator to Vary Tension & Compression of a Resonating Nano-Doubly Clamped Beam for High-Resolution & High Sensitivity Mass Detection Adam Hurst 1 John Regis 1 Chou
More information