SPECIFICATION. Power Integrated Module. Device Name : Type Name : Spec. No. : Fuji Electric Co.,Ltd. Matsumoto Factory H MBR25UA120

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1 SPECIFICATION Device Nme : Power Integrted Module Type Nme : Spec. No. : 7MBR25UA1 Fuji Electric Co.,Ltd. Mtsumoto Fctory Aug. 2 3 Aug. 2 3 Y.Kobyshi T.Miysk K.Ymd T.Fujihir 1 H7

2 R e v i s e d R e c o r d s Dte Clssifiction Ind. Content Applied dte Drwn Checked Approved Aug.2 3 enctment Issued dte T.Miysk K.Ymd T.Fujihir Revised VCE(st)(P5/) Dec.17 3 Revision Revised swtime (P5/, 11/) Revised trr,irr (P12/) Revised VF(P5/, 12/) Revised swloss (P11/) Revised Wrning (P14/, /) Y.Kobyshi T.Miysk K.Ymd Y.Seki 2 H6

3 7MBR25UA1 1. Outline Drwing ( Unit : mm ) ( ) shows reference dimension. 2. Equivlent circuit [ Converter ] [ Brke ] [ Inverter ] [ Thermistor ] 21(P) 22(P1) (Gu) 18 (Gv) 16 (Gw) 8 9 1(R) 2(S) 3(T) 7(B) 19(Eu) 17(Ev) 4(U) (Ew) 5(V) 6(W) 14(Gb) 13(Gx) 12(Gy) 11(Gz) 23(N) 24(N1) (En) 3

4 3.Absolute Mximum Rtings ( t Tc= 25 C unless otherwise specified ) Items Symbols Conditions Mximum Rtings Units CollectorEmitter voltge VCES V GteEmitter voltge VGES ± V Collector current Ic Icp Continuous 1ms Tc=25 C Tc=25 C 25 5 Tc=8 C Tc=8 C A Ic 25 Ic pulse 1ms 5 Collector Power Dissiption Pc 1 device 1 W CollectorEmitter voltge VCES V GteEmitter voltge VGES ± V Collector current Ic Continuous Tc=25 C 25 Tc=8 C Icp 1ms Tc=25 C 5 Tc=8 C A Collector Power Dissiption Pc 1 device 1 W Repetitive pek reverse Voltge (Diode) VRRM V Repetitive pek reverse Voltge VRRM 16 V Averge Output Current Io 5Hz/6Hz sine wve 25 A Inverter Brke Converter Surge Current (NonRepetitive) I 2 t (NonRepetitive) Junction temperture Storge temperture Isoltion between terminl nd copper bse *1 voltge between thermistor nd others *2 Screw Torque Mounting *3 IFSM (*1) All terminls should be connected together when isoltion test will be done. (*2) Two thermistor terminls should be connected together, ech other terminls should be connected together nd shorted to bse plte when isoltion test will be done. (*3) Recommendble Vlue : 2.5~3.5 Nm (M5) I 2 t Tj Tstg Viso Tj= C, ms hlf sine wve AC : 1min ~ A A 2 s C VAC N m 4

5 4. Electricl chrcteristics ( t Tj= 25 C unless otherwise specified) Inverter Brke Converter Thermistor Zero gte voltge Collector current GteEmitter lekge current GteEmitter threshold voltge CollectorEmitter sturtion voltge Input cpcitnce Turnon time Turnoff time Forwrd on voltge Reverse recovery time Zero gte voltge Collector current GteEmitter lekge current CollectorEmitter sturtion voltge Turnon time Turnoff time Reverse current IRRM VR=V Forwrd on voltge VF (terminl) ICES IGES VCE(st) (terminl) VCE(st) (chip) VFM VGE=V Ic = 25A VCE = V VCE = V VGE=±V VGE=V VGE=V IF = 25A Reverse current IRRM VR=16V Resistnce B vlue Items Symbols Conditions ICES IGES VGE(th) VCE(st) (terminl) VCE(st) (chip) Cies ton tr tr (i) toff tf VF (chip) trr Tj= 25 C Tj= 25 C Tj= 25 C Tj= 25 C tr Ic = 25A Tj= 25 C Ic = 25A 2.55 ton Vcc = 6V toff VGE=±V tf Rg = 68 Ω.7. R B VGE = V VCE = V VCE = V VGE=±V VCE = V Ic = 25mA VCE=V,VGE=V,f=1MHz Vcc = 6V Ic = 25A VGE=±V Rg = 68 Ω VGE=V IF = 25A IF = 25A VGE = V T = 25 C T = 25/5 C teminl 1. chip Tj= 25 C T = C 465 Chrcteristics min. typ. mx ma 1.5 na V μs V 1. ma ma 8.5 V Units na V nf μs V μs ma Ω K 5

6 5. Therml resistnce chrcteristics Items Symbols Conditions Inverter IGBT Chrcteristics min. typ. mx. 1.7 Therml resistnce(1device) Rth(jc) Inverter FWD 1.58 Brke IGBT 1.7 Converter Diode.9 Contct Therml resistnce(1device) Rth(cf) with Therml Compound (*).5 * This is the vlue which is defined mounting on the dditionl cooling fin with therml compound. Units C/W 6. Indiction on module 7MBR25UA1 25A V Lot.No. Plce of mnufcturing (code) 7.Applicble ctegory This specifiction is pplied to IGBT Module nmed 7MBR25UA1. 8.Storge nd trnsporttion notes The module should be stored t stndrd temperture of 5 to 35 C nd humidity of 45 to 75%. Store modules in plce with few temperture chnges in order to void condenstion on the module surfce. Avoid exposure to corrosive gses nd dust. Avoid excessive externl force on the module. Store modules with unprocessed terminls. Do not drop or otherwise shock the modules when trnsporting. 9. Definitions of switching time ~ 9% V V L VGE t rr Vcc VCE 9% I rr ~ Ic 9% RG VGE VCE V A Ic % t r(i) % VCE % ~ t f Ic t r ton toff. Pcking nd Lbeling Disply on the pcking box Logo of production Type nme Lot No Products quntity in pcking box 6

7 11. Relibility test results Test items Relibility Test Items Test methods nd conditions Reference norms EIAJ ED471 (Aug.1 edition) Number of smple Test ctegories Acceptnce number 1 Terminl Strength Pull force : N Test Method 1 5 ( : 1 ) (Pull test) Test time : ±1 sec. MethodⅠ 2 Mounting Strength Screw torque : 2.5 ~ 3.5 N m (M5) Test Method 2 5 ( : 1 ) Test time : ±1 sec. methodⅡ Mechnicl Tests Environment Tests 3 Vibrtion Rnge of frequency : ~ 5Hz Test Method 3 5 ( : 1 ) Sweeping time : min. Reference 1 Accelertion : m/s 2 Condition code B Sweeping direction : Ech X,Y,Z xis Test time : 6 hr. (2hr./direction) 4 Shock Mximum ccelertion : 5m/s 2 Test Method 4 5 ( : 1 ) Pulse width : 1.msec. Condition code B Direction : Ech X,Y,Z xis Test time : 3 times/direction 5 Solderbitlity Solder temp. : 235±5 Test Method 3 5 ( : 1 ) Immersion time : 5±.5sec. Condition code A Test time : 1 time Ech terminl should be Immersed in solder within 1~1.5mm from the body. 6 Resistnce to Solder temp. : 26±5 Test Method 2 5 ( : 1 ) Soldering Het Immersion time : ±1sec. Condition code A Test time : 1 time Ech terminl should be Immersed in solder within 1~1.5mm from the body. 1 High Temperture Storge temp. : 125±5 Test Method 1 5 ( : 1 ) Storge Test durtion : hr. 2 Low Temperture Storge temp. : ±5 Test Method 2 5 ( : 1 ) Storge Test durtion : hr. 3 Temperture Storge temp. : 85±2 Test Method 3 5 ( : 1 ) Humidity Reltive humidity : 85±5% Test code C Storge Test durtion : hr. 4 Unsturted Test temp. : 1±2 Test Method 3 5 ( : 1 ) Pressure Cooker Atmospheric pressure : P Test code E Test humidity : 85±5% Test durtion : 96hr. 5 Temperture Test Method 5 5 ( : 1 ) Cycle Test temp. : Low temp. ±5 High temp. 125 ±5 RT 5 ~ 35 Dwell time : High ~ RT ~ Low ~ RT 1hr..5hr. 1hr..5hr. Number of cycles : cycles 6 Therml Shock + Test Method 7 5 ( : 1 ) Test temp. : High temp. 5 method Ⅰ +5 Condition code A Low temp. Used liquid : Wter with ice nd boiling wter Dipping time : 5 min. pr ech temp. Trnsfer time : sec. Number of cycles : cycles 7

8 Relibility Test Items Endurnce Tests Test items Test methods nd conditions Reference norms EIAJ ED471 (Aug.1 edition) Number of smple Test ctegories Acceptnce number 1 High temperture Test Method 1 5 ( : 1 ) Reverse Bis Test temp. : T = 125±5 (Tj ) Bis Voltge : VC =.8 VCES Bis Method : Applied DC voltge to CE VGE = V Test durtion : hr. 2 High temperture Test Method 1 5 ( : 1 ) Bis (for gte) Test temp. : T = 125±5 (Tj ) Bis Voltge : VC = VGE = +V or V Bis Method : Applied DC voltge to GE VCE = V Test durtion : hr. 3 Temperture Test Method 2 5 ( : 1 ) Humidity Bis Test temp. : 85±2 o C Condition code C Reltive humidity : 85±5% Bis Voltge : VC =.8 VCES Bis Method : Applied DC voltge to CE VGE = V Test durtion : hr. 4 Intermitted ON time : 2 sec. Test Method 6 5 ( : 1 ) Operting Life OFF time : 18 sec. (Power cycle) Test temp. : Tj=±5 deg ( for IGBT ) Tj, T=25±5 Number of cycles : cycles Filure Criteri Item Chrcteristic Symbol Filure criteri Unit Note Lower limit Upper limit Electricl Lekge current ICES USL 2 ma chrcteristic ±IGES USL 2 µa Gte threshold voltge VGE(th) LSL.8 USL 1.2 ma Sturtion voltge VCE(st) USL 1.2 V Forwrd voltge VF USL 1.2 V Therml IGBT VGE USL 1.2 mv resistnce or VCE FWD VF USL 1.2 mv Isoltion voltge Viso Broken insultion Visul Visul inspection inspection Peeling The visul smple Plting nd the others LSL : Lower specified limit. USL : Upper specified limit. Note : Ech prmeter mesurement redouts shll be mde fter stbilizing the components t room mbient for 2 hours minimum, 24 hours mximum fter removl from the tests. And in cse of the wetting tests, for exmple, moisture resistnce tests, ech component shll be mde wipe or dry completely before the mesurement. 8

9 Relibility Test Results Test ctegorie s Test items Reference norms EIAJ ED471 (Aug.1 edition) Number of test smple Number of filure smple Endurnce Tests Environment Tests Mechnicl Tests 1 Terminl Strength Test Method 1 5 (Pull test) MethodⅠ 2 Mounting Strength Test Method 2 5 methodⅡ 3 Vibrtion Test Method 3 5 Condition code B 4 Shock Test Method 4 5 Condition code B 5 Solderbitlity Test Method 3 5 Condition code A 6 Resistnce to Soldering Het Test Method 2 5 Condition code A 1 High Temperture Storge Test Method Low Temperture Storge Test Method Temperture Humidity Test Method 3 5 Storge Test code C 4 Unsturted Test Method 3 5 Pressure Cooker Test code E 5 Temperture Cycle Test Method Therml Shock Test Method 7 5 method Ⅰ Condition code A 1 High temperture Reverse Bis Test Method High temperture Bis Test Method 1 5 ( for gte ) 3 Temperture Humidity Bis Test Method 2 5 Condition code C 4 Intermitted Operting Life Test Method 6 5 (Power cycling) ( for IGBT ) 9

10 [ Inverter ] [ Inverter ] Collector current vs. CollectorEmitter voltge (typ.) Collector current vs. CollectorEmitter voltge (typ.) Tj= 25 C / chip Tj= 125 C / chip Collector current : Ic [A] VGE=V V 12V V Collector current : Ic [A] VGE=V V 12V V 8V 8V CollectorEmitter voltge : VCE [V] CollectorEmitter voltge : VCE [V] [ Inverter ] [ Inverter ] Collector current vs. CollectorEmitter voltge (typ.) CollectorEmitter voltge vs. GteEmitter voltge (typ.) VGE=V / chip Tj=25 C / chip Collector current : Ic [A] Tj=25 C Collector Emitter voltge : VCE [ V ] Ic=A Ic=A Ic= 7.5A CollectorEmitter voltge : VCE [V] 5 25 Gte Emitter voltge : VGE [ V ] [ Inverter ] [ Inverter ] Cpcitnce vs. CollectorEmitter voltge (typ.) Dynmic Gte chrge (typ.) VGE=V, f= 1MHz, Tj= 25 C Vcc=6V, Ic=25A,Tj= 25 C. Cpcitnce : Cies, Coes, Cres [ nf ] 1..1 Cies Coes Cres CollectorEmitter voltge : VCE [ V/div ] Gte Emitter voltge : VGE [ 5V/div ] VGE VCE 6 9 CollectorEmitter voltge : VCE [V] Gte chrge : Qg [ nc ]

11 [ Inverter ] [ Inverter ] Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=6V, VGE=±V, Rg=68Ω, Tj= 25 C Vcc=6V, VGE=±V, Rg=68Ω, Switching time : ton, tr, toff, tf [ nsec ] ton toff tr tf Switching time : ton, tr, toff, tf [ nsec ] toff ton tr tf Collector current : Ic [ A ] Collector current : Ic [ A ] [ Inverter ] [ Inverter ] Switching time vs. Gte resistnce (typ.) Switching loss vs. Collector current (typ.) Vcc=6V, Ic=25A, VGE=±V, Tj= 25 C Vcc=6V, VGE=±V, Rg=68Ω 8. Switching time : ton, tr, toff, tf [ nsec ] tr tf ton toff Switching loss : Eon, Eoff, Err [ mj/pulse ] Eon(125 C) Eon(25 C) Eoff(125 C) Eoff(25 C) Err(125 C) Err(25 C)... Gte resistnce : Rg [ Ω ]. Collector current : Ic [ A ] [ Inverter ] [ Inverter ] Switching loss vs. Gte resistnce (typ.) Reverse bis sfe operting re (mx.) Vcc=6V, Ic=25A, VGE=±V, Tj= 125 C +VGE=V,VGE <= V, RG >= 68Ω,Tj <= 125 C 75 Switching loss : Eon, Eoff, Err [ mj/pulse ] Eon 5 Eoff Err... Collector current : Ic [ A ] Gte resistnce : Rg [ Ω ] Collector Emitter voltge : VCE [ V ] 11

12 [ Inverter ] [ Inverter ] Forwrd current vs. Forwrd on voltge (typ.) Reverse recovery chrcteristics (typ.) chip Vcc=6V, VGE=±V, Rg=68Ω Forwrd current : IF [ A ] Tj=25 C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] trr (125 C) trr (25 C) Irr (125 C) Irr (25 C) Forwrd on voltge : VF [ V ] Forwrd current : IF [ A ] [ Converter ] Forwrd current vs. Forwrd on voltge (typ.) chip 6 Forwrd current : IF [ A ] 5 Tj=25 C Forwrd on voltge : VFM [ V ] Trnsient therml resistnce (mx.) [ Thermistor ] Temperture chrcteristic (typ.). Therml resistnse : Rth(jc) [ C/W ] 1.. FWD[Inverter] IGBT[Inverter, Brke] Conv. Diode Resistnce : R [ kω ] Pulse width : Pw [ sec ] Temperture [ C ] 12

13 [ Brke ] [ Brke ] Collector current vs. CollectorEmitter voltge (typ.) Collector current vs. CollectorEmitter voltge (typ.) Tj= 25 C / chip Tj= 125 C / chip Collector current : Ic [A] VGE=V V 12V V Collector current : Ic [A] VGE=V V 12V V 8V 8V CollectorEmitter voltge : VCE [V] CollectorEmitter voltge : VCE [V] [ Brke ] [ Brke ] Collector current vs. CollectorEmitter voltge (typ.) CollectorEmitter voltge vs. GteEmitter voltge (typ.) VGE=V / chip Tj=25 C / chip Collector current : Ic [A] Tj=25 C Collector Emitter voltge : VCE [ V ] Ic=A Ic=A Ic=7.5A CollectorEmitter voltge : VCE [V] 5 25 Gte Emitter voltge : VGE [ V ] [ Brke ] [ Brke ] Cpcitnce vs. CollectorEmitter voltge (typ.) Dynmic Gte chrge (typ.) VGE=V, f= 1MHz, Tj= 25 C Vcc=6V, Ic=25A,Tj= 25 C. Cpcitnce : Cies, Coes, Cres [ nf ] 1..1 Cies Coes Cres CollectorEmitter voltge : VCE [ V/div ] Gte Emitter voltge : VGE [ 5V/div ] VGE VCE 6 9 CollectorEmitter voltge : VCE [V] Gte chrge : Qg [ nc ] 13

14 Wrnings This product shll be used within its bsolute mximum rting (voltge, current, nd temperture). This product my be broken in cse of using beyond the rtings. 製品の絶対最大定格 ( 電圧, 電流, 温度等 ) の範囲内で御使用下さい 絶対最大定格を超えて使用すると 素子が破壊する場合があります Connect dequte fuse or protector of circuit between threephse line nd this product to prevent the equipment from cusing secondry destruction, such s fire, its spreding, or explosion. 万一の不慮の事故で素子が破壊した場合を考慮し 商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを必ず付けて火災, 爆発, 延焼等の 2 次破壊を防いでください Use this product fter relizing enough working on environment nd considering of product's relibility life. This product my be broken before trget life of the system in cse of using beyond the product's relibility life. 製品の使用環境を十分に把握し 製品の信頼性寿命が満足できるか検討の上 本製品を適用して下さい 製品の信頼性寿命を超えて使用した場合 装置の目標寿命より前に素子が破壊する場合があります When electric power is connected to equipments, rush current will be flown through rectifying diode to chrge DC cpcitor. Gurnteed vlue of the rush current is specified s I 2 t (nonrepetitive), however frequent rush current through the diode might mke it's power cycle destruction occur becuse of the repetitive power. In ppliction which hs such frequent rush current, well considertion to product life time (i.e. suppressing the rush current) is necessry. 電源投入時に整流用ダイオードには コンデンサーを充電する為の突入電流が流れます この突入電流に対する保証値は I 2 t( 非繰返し ) として表記されていますが この突入電流が頻繁に流れるとI 2 t 破壊とは別に整流用ダイオードの繰返し負荷によるパワーサイクル耐量破壊を起こす可能性があります 突入電流が頻繁に流れるようなアプリケーションでは 突入電流値を抑えるなど 製品寿命に十分留意してご使用下さい If the product hd been used in the environment with cid, orgnic mtter, nd corrosive gs ( hydrogen sulfide, sulfurous cid gs), the product's performnce nd ppernce cn not be ensured esily. 酸 有機物 腐食性ガス ( 硫化水素, 亜硫酸ガス等 ) を含む環境下で使用された場合 製品機能 外観等の保証はできません Use this product within the power cycle curve (Technicl Rep.No. : MT5F12959). Power cycle cpbility is clssified to delttj mode which is stted s bove nd delttc mode. DeltTc mode is due to rise nd down of cse temperture (Tc), nd depends on cooling design of equipment which use this product. In ppliction which hs such frequent rise nd down of Tc, well considertion of product life time is necessry. 本製品は パワーサイクル寿命カーブ以下で使用下さい ( 技術資料 No.: MT5F12959) パワーサイクル耐量にはこの ΔTj による場合の他に ΔTc による場合があります これはケース温度 (Tc) の上昇下降による熱ストレスであり 本製品をご使用する際の放熱設計に依存します ケース温度の上昇下降が頻繁に起こる場合は 製品寿命に十分留意してご使用下さい Never dd mechnicl stress to deform the min or control terminl. The deformed terminl my cuse poor contct problem. 主端子及び制御端子に応力を与えて変形させないで下さい 端子の変形により 接触不良などを引き起こす場合があります Use this product with keeping the cooling fin's fltness between screw holes within um t mm nd the roughness within um. Also keep the tightening torque within the limits of this specifiction. Too lrge convex of cooling fin my cuse isoltion brekdown nd this my led to criticl ccident. On the other hnd, too lrge concve of cooling fin mkes gp between this product nd the fin bigger, then, therml conductivity will be worse nd over het destruction my occur. 冷却フィンはネジ取り付け位置間で平坦度を mm で um 以下 表面の粗さは um 以下にして下さい 過大な凸反りがあったりすると本製品が絶縁破壊を起こし 重大事故に発展する場合があります また 過大な凹反りやゆがみ等があると 本製品と冷却フインの間に空隙が生じて放熱が悪くなり 熱破壊に繋がることがあります In cse of mounting this product on cooling fin, use therml compound to secure therml conductivity. If the therml compound mount ws not enough or its pplying method ws not suitble, its spreding will not be enough, then, therml conductivity will be worse nd therml run wy destruction my occur. Confirm spreding stte of the therml compound when its pplying to this product. (Spreding stte of the therml compound cn be confirmed by removing this product fter mounting.) 素子を冷却フィンに取り付ける際には 熱伝導を確保するためのコンパウンド等をご使用ください 又 塗布量が不足したり 塗布方法が不適だったりすると コンパウンドが十分に素子全体に広がらず 放熱悪化による熱破壊に繋がる事があります コンバウンドを塗布する際には 製品全面にコンパウンドが広がっている事を確認してください ( 実装した後に素子を取りはずすとコンパウンドの広がり具合を確認する事が出来ます ) It shll be confirmed tht IGBT's operting locus of the turnoff voltge nd current re within the RBSOA specifiction. This product my be broken if the locus is out of the RBSOA. ターンオフ電圧 電流の動作軌跡が RBSOA 仕様内にあることを確認して下さい RBSOA の範囲を超えて使用すると素子が破壊する可能性があります If excessive sttic electricity is pplied to the control terminls, the devices my be broken. Implement some countermesures ginst sttic electricity. 制御端子に過大な静電気が印加された場合 素子が破壊する場合があります 取り扱い時は静電気対策を実施して下さい Never dd the excessive mechnicl stress to the min or control terminls when the product is pplied to equipments. The module structure my be broken. 素子を装置に実装する際に 主端子や制御端子に過大な応力を与えないで下さい 端子構造が破壊する可能性があります 14

15 Wrnings In cse of insufficient VGE, erroneous turnon of IGBT my occur. VGE shll be set enough vlue to prevent this mlfunction. (Recommended vlue : VGE = V) 逆バイアスゲート電圧 VGE が不足しますと誤点弧を起こす可能性があります 誤点弧を起こさない為に VGE は十分な値で設定して下さい ( 推奨値 : VGE = V) In cse of higher turnon dv/dt of IGBT, erroneous turnon of opposite rm IGBT my occur. Use this product in the most suitble drive conditions, such s +VGE, VGE, RG to prevent the mlfunction. ターンオン dv/dt が高いと対抗アームの IGBT が誤点弧を起こす可能性があります 誤点弧を起こさない為の最適なドライブ条件 (+VGE, VGE, RG 等 ) でご使用下さい This product my be broken by vlnche in cse of VCE beyond mximum rting VCES is pplied between CE terminls. Use this product within its bsolute mximum voltge. VCES を超えた電圧が印加された場合 アバランシェを起こして素子破壊する場合があります VCE は必ず絶対定格の範囲内でご使用下さい Cutions Fuji Electric Device Technology is constntly mking every endevor to improve the product qulity nd relibility. However, semiconductor products my rrely hppen to fil or mlfunction. To prevent ccidents cusing injury or deth, dmge to property like by fire, nd other socil dmge resulted from filure or mlfunction of the Fuji Electric Device Technology semiconductor products, tke some mesures to keep sfety such s redundnt design, spredfirepreventive design, nd mlfunctionprotective design. 富士電機デバイステクノロジーは絶えず製品の品質と信頼性の向上に努めています しかし 半導体製品は故障が発生したり 誤動作する場合があります 富士電機デバイステクノロジー製半導体製品の故障または誤動作が 結果として人身事故 火災等による財産に対する損害や社会的な損害を起こさないように冗長設計 延焼防止設計 誤動作防止設計など安全確保のための手段を講じて下さい The ppliction exmples described in this specifiction only explin typicl ones tht used the Fuji Electric Device Technology products. This specifiction never ensure to enforce the industril property nd other rights, nor license the enforcement rights. 本仕様書に記載してある応用例は 富士電機デバイステクノロジー製品を使用した代表的な応用例を説明するものであり 本仕様書によって工業所有権 その他権利の実施に対する保障または実施権の許諾を行うものではありません The product described in this specifiction is not designed nor mde for being pplied to the equipment or systems used under lifethretening situtions. When you consider pplying the product of this specifiction to prticulr used, such s vehiclemounted units, shipbord equipment, erospce equipment, medicl devices, tomic control systems nd submrine relying equipment or systems, plese pply fter confirmtion of this product to be stisfied bout system construction nd required relibility. 本仕様書に記載された製品は 人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを目的として設計 製造されたものではありません 本仕様書の製品を車両機器 船舶 航空宇宙 医療機器 原子力制御 海底中継機器あるいはシステムなど 特殊用途へのご利用をご検討の際は システム構成及び要求品質に満足することをご確認の上 ご利用下さい If there is ny uncler mtter in this specifiction, plese contct Fuji Electric Device Technology Co.,Ltd.