Supporting Information for

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1 Supporting nformation for Hybrid N-Butylamine-Based Ligands for Switching the Colloidal Solubility and Regimentation of norganic-capped Nanocrystals Vladimir Sayevich, 1 Chris Guhrenz, 1 Volodymyr M. Dzhagan, 2 Maria Sin, 3 Matthias Werheid, 1 Bin Cai, 1 Lars Borchardt, 4 Johannes Widmer, 5 Dietrich R.T. Zahn, 2 Eike Brunner, 3 Vladimir Lesnyak, 1 Nikolai Gaponik, 1 Alexander Eychmüller 1 1. Physical Chemistry and Center for Advancing Electronics Dresden (cfaed), TU Dresden, Bergstr. 66b, Dresden, Germany; 2. Semiconductor Physics, TU Chemnitz, D Chemnitz, Germany; 3. Department of Chemistry and Food Chemistry, Bioanalytical Chemistry, TU Dresden, Bergstr. 66, Dresden, Germany; 4. Department of norganic Chemistry, TU Dresden, Bergstr. 66, Dresden 01062, Germany; 5. nstitut für Angewandte Photophysik, TU Dresden, George-Bähr-Str. 1, Dresden, Germany. Nikolai.Gaponik@chemie.tu-dresden.de Absorbance, a.u. Absorbance, a.u. Absorbance, a.u. Figure S1. The magnified area of the absorbance spectra of the CdSe/CdS (CdSe core diameter = 3.4 nm) NCs stabilized with organic ligands (OL) in chloroform (black), after ligand exchange with the inorganic ligands in MFA (red), and after subsequent passivation of the inorganic-capped NCs with n-butylamine in chloroform (blue). The inorganic ligands used for stabilization of the NCs were: - (A), Ga--complex (B) and Zn--complex (C).The spectra are shifted for clarity. 1

2 A B C Figure S2. Absorbance (solid) and steady-state PL spectra (dashed) of the 7.5 nm CdSe/CdS NCs (CdSe core diameter = 3.4 nm) stabilized with organic ligands (OL) in chloroform (black), after ligand exchange with the inorganic ligands in MFA (red), and after subsequent passivation of the inorganic-capped NCs with n-butylamine in chloroform (blue). The inorganic ligands used for stabilization of the CdSe/CdS-6ML NCs included: - (A), Ga-complex (B) and Zn--complex (C). Their PL QYs are also presented. All absorbance spectra were normalized to the intensity of the first exiton transition. CdS (OL) CdS ( - ) CdS ( - )/(Bu-NH 2 ) CdTe (OL) CdTe ( - ) CdTe ( - )/(Bu-NH 2 ) Wavelength, nm Wavelength, nm Figure S3. Absorbance spectra of the Ga--complex-capped 4.5 nm CdSe NCs (A), - -capped 3.5 nm CdS NCs (B) and - -capped 3.6 nm CdTe NCs (C) functionalized with different alkylamines in chloroform. The organic- and allinorganic-capped NCs were redispersed in chloroform (black) and MFA (red), respectively. All absorbance spectra were normalized to the intensity of the first exciton transition and vertically shifted. 2

3 CdSe (OL) CdSe (Ga--complex) CdSe (Ga--complex)/ (Bu-NH 2 ) Cd Ga Ga Cd Cd O N C Se Se SeCd Binding Energy, ev Figure S4. The XPS surveys of the 4.5 nm CdSe NCs capped with organic ligands (black), inorganic Ga--complex (red) and hybrid Bu-NH 2 /Ga--complex ligands (blue). The XPS peaks of the elements detected are labeled, the Auger peaks are marked as asterisks. 3

4 Figure S5. The selected region of XPS profile of the inorganic- and hybrid-stabilized CdSe NCs. The broad feature between Ga 2p 1/2 and Ga 2p 3/2 peaks with maximum at 1130 ev stems from Cd-related Auger background. Mobility, µmcm/(v s) mv-22 mv-15 mv CdSe (Ga-complex) CdSe ( - ) CdSe (Zn-complex) CdSe (OL) ntensity, a.u Zeta Potential, mv Figure S6. Electrophoretic mobilities and electrokinetic (ξ) potentials acquired by DLS for solutions of 4.5 nm CdSe and 7.5 nm CdSe/CdS NCs stabilized with halide and halogenidometallate complex ligands in MFA. The data for the CdSe NCs capped with organic ligands (CdSe (OL)) in chloroform are presented for comparison. 4

5 Figure S7. 1 H NMR spectra of the CdSe ( - )/(Bu-NH 2 ) NCs dispersed in CDCl 3 (red). The spectra of the solvent CDCl 3 (green), and Bu-NH 2 (blue) are presented for comparison. Figure S8. TEM images of the 4.5 nm CdSe NCs capped with - (A, D), Ga--complex (B, E) and Zn--complex ligands (C, F). 5

6 Figure S9. TEM images of the hybrid Bu-NH2/Zn--complex-stabilized 4.5 nm CdSe NCs. Figure S10. TEM images of the hybrid Bu-NH2/--stabilized 7.5 nm CdSe/CdS NCs at different magnifications. Figure S11. AFM topography and photography (inset) of the Bu-NH2/Ga--complex CdSe NC solids on a glass substrate after heat treatment at 190 C for 30 min. The root-mean-square (RMS) of the film roughness estimated from the AFM image is <0.5 nm. 6

7 Figure S12. Output (A) and transfer (B, C) characteristics of the n-channel SiO 2 -FET based on all-inorganic 4.5 nm CdSe NCs stabilized with Bu-NH 2 /Ga--complex ligands in the linear (V D = 10 V) (B) and saturation (V D = 60 V) (C) regimes. W/L = 1000/200 µm. Figure S13. Output (A) and transfer (B, C) characteristics of the n-channel SiO 2 -FET based on all-inorganic 4.5 nm CdSe NCs stabilized with Ga--complex ligands in the linear (V D = 5 V) (B) and saturation (V D = 60 V) (C) regimes. W/L = 1000/150 µm. Figure S14. Output (A) and transfer (B, C) characteristics of the n-channel SiO 2 -FET based on all-inorganic 4.5 nm CdSe NCs stabilized with Zn--complex ligands in the linear (V D = 8 V) (B) and saturation (V D = 60 V) (C) regimes. W/L = 1000/50 µm. 7