Molecular Glass Resist with Organic Developer
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1 1 Molecular Glass Resist with Organic Developer James M. Blackwell 1,2 Armando Ramirez 1 Hiroki Nakagawa 1,3 Yoshi Hishiro 3 1 Intel's Molecules for Advanced Patterning(MAP) Program, LBNL Molecular Foundry, 1 Cyclotron Road, Berkeley, CA Intel Corporation, 2501 NW 299 th Ave., Hillsboro, OR JSR Micro Inc, 1280 N Mathilda Ave., Sunnyvale, CA 94089
2 2 Synthesis of Noria Resorcinol + C CH 2 CH 2 CH 2 1,5- Pentanedial C HCl 80 o C, 48 h in Ethanol NORIA Nisikubo et al., Angew. Chem. Int. Ed. 2006, 45,
3 3 Solubility Property of Noria 2.5% of Noria solution was prepared with NMP: N-methyl pyrrolidinone 1ml of Noria solution was mixed to 2ml of various solvents Organic Solvent 1 insoluble Me Slight Soluble 2.38%TMAH aq. Soluble Organic Solvent 2 insoluble DMSO Soluble
4 4 Synthesis of Noria Platform Resist TBAB K 2 CO 3 NMP NMP NMP 70 / 4hr 70 / 1hr 70 / 6hr Noria Methyl Adamantyl bromoacetate R: or H NORIA-50MAd
5 5 Insolubility of Molecular l Glass Resist Unexposred area Noria-50MAd Exposured area R : O R : : 50% or H or H : 50% Soluble in organic solvent Insoluble in organic solvent
6 6 Contrast Curve with Berkeley MET Resist 1) Molecular Glass Resist: Noria-50MAd / TPSTOf 2) PHS Polymer Resist: PHS-Acryl Hybrid Polymer / TPSTOf * No quencher was included d in both resists Development Condition Organic Solvent Developer 45s, Spin Dry 45s Evaluation Condition Substrate: AL (20nm, 205C / 60s) PR FT: 50nm Exposure: Berkeley MET, 0.30NA Dose Range mj/cm 2 Reticle Non, Contrast Curve
7 7 Contrast Curve with Berkeley MET Faster Photospeed, Better Contrast than PHS Polymer Resist
8 8 LS Patterning with Berkeley MET Resist 1) Molecular Glass Resist: Noria-50MAd / TPSTOf / TOA 2) PHS Polymer Resist: PHS-Acryl Hybrid Polymer / TPSTOf / TOA Development Condition Organic Solvent Developer 45s, Spin Dry 45s Evaluation Condition Substrate: AL (20nm, 205C / 60s) PR FT: Exposure: Reticle 40nm Berkeley MET, 0.30NA / Rot. Dipole LS pattern feature Berkeley Low -Flare Bright Resolution(Pseudo-dark) CH pattern feature Berkeley Bright Resolution
9 9 30nmLS Feature with Berkeley MET Molecular Glass Resist PHS Polymer Resist Ecd: 17.53mJ/cm 2 Ecd: 20.16mJ/cm 2 CD: 24.3nm CD: --nm LER: 4.6nm LER: --nm Slight Top-loss No-pattern
10 10 Ultimate Resolution of LS Feature Organic Solvent 30nmLS CD: 29.7nm LER: 4.9nm 28nmLS CD: 24.2nm LER: 5.5nm 26nmLS 16.35mJ/cm 2 Bridge Collapse CD: 24.3nm LER: 4.6nm CD: 29.1nm CD: 27.2nm CD: 24.8nm LER: 4.3nm LER: 4.4nm LER: 17.53mJ/cm 2 Standard Developer (2.38% TMAHaq) CD: 29.7nm LER: 5.9nm Collapse Organic solvent showed higher resolution than standard d developer.
11 11 CH Patterning with Berkeley MET Organic Solvent 45nmCH 40nmCH 11.70mJ/cm 2 Molecular glass resist with organic solvent development showed high resolution with high sensitivity.
12 12 Future Plan Noria Derivatives with Various Protective Group Size Deprotection Speed Large Low Small High Cross-linking Noria Resist
13 13 Summary Ml Molecular l glass based resist it is one of the most remarkable materials because of its small and uniformly sized chemical structure t Noria changed solubility into organic solvent by deprotection reaction. 24nmhp resolution was demonstrated with Molecular glass resist, Noria-50MAd.
14 14 Ak Acknowledgement ld Brewer Science Advanced Light Source (LBNL) Sematech Resist and Materials Development Center (RMDC) Department of Energy (DoE)
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