US EU 2D Workshop at a Glance Monday, October 23, Ballroom. Break. Session 2. Lunch. Session 3. Break
|
|
- Natalie Gabriella Logan
- 5 years ago
- Views:
Transcription
1 US EU 2D Workshop at a Glance Monday, October 23, 2017 Ballroom Registration and fast Session 1 Session 2 Lunch Session 3 Session 4 Posters and Reception Tuesday, October 24, 2017 Arlington Ballston Clarendon Registration and fast Session 5A Session 5B Session 5C Session 6A Session 6B Session 6C Session 7A Lunch Session 7B Session 7C Session 8A Session 8B Session 8C Junior Ballroom Dinner Wednesday, October 25, 2017 Ballroom Registration and fast Session 9 Session 10
2 US EU 2D Workshop, Monday, October 23, 2017 Alan Seabaugh U. Notre Dame Chair Vladimir Falko U. Manchester Co chair Nikhil Shukla U. Notre Dame Scribe Alan Seabaugh U. Notre Dame Welcome and meeting introduction Session 1 Integration James Hwang Lehigh U. Toward 2D CMOS integration Frank Koppens ICFO Graphene CMOS camera for visible and infrared light Thomas Mueller TU Wien 2D nanosheet electronics and optoelectronics Session 2 Challenges in Science and Technology Mark Hersam Northwestern U. Interfacial engineering of twodimensional nanoelectronic Bob Wallace U. Texas at Dallas 2D materials integration: what have we learned? Giulio Cerullo Milan Polytechnic Ultra fast carrier and spin dynamics in 2D semiconductors All Discussion Integration on electronic and optoelectronic platforms Session 3 Quantum Phenomena Klaus Ensslin ETH Zurich 2DM quantum devices Jeremy Levy U. Pittsburgh Correlated nanoelectronics Alberto Morpurgo U. Geneva Gate induced superconductivity in transition metal dichalcogenides All Discussion What are the major scientific questions that should be addressed? Session 4 Government Investment Priorities Jari Kinaret Chalmers U. Graphene flagship: the present status and future plans Dimitris Pavlidis NSF 2 DARE, MIP, DEMREF and other related investments by NSF Kenneth Goretta AFOSR Global investment in basic research by the US Department of Defense Other Government Program Managers 2D related investments
3 US EU 2D Workshop, Monday, October 23, 2017, Poster Session Alan Seabaugh Notre Dame U. Chair Frank Koppens ICFO Co chair Ian Appelbaum Linyou Cao Albert Davydov NIST William Philip Douglas Feng U. Maryland, College Park North Carolina State U. North Carolina State U. Case Western Reserve U. Susan Fullerton U. Pittsburgh Henri Happy U. Lille Angela Hight Walker NIST Tania Roy U. Central Florida Amin Salehi Khojin U. Illinois Chicago Humberto Terrones RPI Fengnian Xia Yale U. Kuanchen Xiong Lehigh U. Intrinsic two dimensional states on the pristine surface of tellurium Room temperature electron hole liquid in monolayer MoS 2 Reversible 2H 1T phase transformation in MoTe2 layers 2D TMDC materials foundry and wafer scale synthesis Highly tunable atomic layer semiconducting 2D nanoelectromechanical systems (NEMS) Monolayer solid state electrolyte for electric double layer gating of 2D fieldeffect transistors GFET for high frequency applications: impact of process on high frequency noise In operando characterization of 2D heterostructure devices: an overview of NIST s efforts Van der Waals for energy efficient electronics Energy conversion and storage in 2D materials: challenges and opportunities Second harmonic generation of transition metal dichalcogenides alloys and BNC alloys Black phosphorus optoelectronics and electronics Wafer scale 2D MOSFET fabrication on CVD MoS 2 and CMOS substrate Xiaodong Xu U. Washington Monolayer magnets Wenjuan Zhu UIUC Nanoscale electronic and photonic devices based on two dimensional materials
4 US EU 2D Workshop, Tuesday, October 24, 2017, out Session A, Arlington Room Eric Pop Stanford U. Chair Deji Akinwande U. Texas Austin Co chair Philip Feng Case Western U. Scribe Session 5A Vision I Kaustav Bannerjee UC Santa Barbara 2D materials for smart life Eric Pop Stanford U. Electrical, thermal, and (some) unconventional applications of 2D materials Deji Akinwande U. Texas Austin Graphene/2D integration: progress, challenges and applications Session 6A Control, Integration, and Oxides James Hone Columbia U. Dynamic rotational control of van der Waals Volker Sorger George Washington U Roman Engel Herbert Penn State U. Session 7A Growth and Metrology Christopher Hinkle U. Texas at Dallas Joan Redwing Penn State U. Van der Waals layered materials: building the knowledge base, synthesis and devices for the new frontier in nanophotonics Toward integration of 2D materials with functional oxides Back end of line compatible WSe2 FETs grown by MBE on ALD oxides Metalorganic chemical vapor deposition of transition metal dichalcogenides Amalia Patane U. Nottingham From epitaxy to science and technologies of metal chalcogenide van der Waals crystals All Discussion Session 8A Vision II Peide Ye Purdue U. High performance transistor technology enabled by 2D and 1D van der Waals materials Randall Feenstra Carnegie Mellon U. Limits on the performance of 2D interlayer tunneling field effect transistors Spyridon Pavlidis Georgia Tech/North Carolina State U All Discussion Towards low voltage electronic devices using 2D TMD vertical
5 US EU 2D Workshop, Tuesday, October 24, 2017, out Session B, Ballston Room Andras Kis EPFL Chair Susan Fullerton U. Pittsburgh Co chair Tania Roy U. Central Florida Scribe Session 5B Device and Phenomena Andras Kis EPFL Valley/spin devices based on 2D TMDCs Sam Berweger NIST Microwave near field imaging of 2D materials and devices Christoph Stampfer RWTH Aachen Ballistic transport in CVD graphene Session 6B Device and Phenomena Vladimir Falko U. Manchester Magnetic minibands in moiré superlattices in graphene hbn, persistent to high temperatures Dirk Englund Massachusetts Inst. of Technology 2D materials for optoelectronic devices for sensing and communications Josh Robinson Penn State U. Creating and exploring atomicallythin materials and Session 7B New Materials Georg Duesberg Trinity C. Dublin Devices based on PtSe Albert Davydov NIST Phase diagrams for phase change and band gap engineering in TMD materials Joshua Goldberger Ohio State U. Tailoring electronic and magnetic phenomena in new germanium and tin containing 2D materials All Discussion Session 8B Devices and Heterostructures Nikhil Shukla Controlling filament dynamics in U. Notre Dame/ resistive switching devices with 2D U. Virginia interlayers Lincoln Lauhon Northwestern U. Synthesis and characterization of mixed dimensional Gary Steele Delft U. of Technology All Discussion Direct observation of the Josephson inductance of a ballistic graphene Josephson junction using a superconducting cavity
6 US EU 2D Workshop, Tuesday, October 24, 2017, out Session C, Clarendon Room Chair William Vandenberghe U. Texas at Dallas Co chair Gary Steele Delft U. Technology Scribe Session 5C Topological Physics and Devices Vandenbergh William U. Texas at Dallas 2D topological insulator electronics e Recent advances in the fundamental Italian Institute of Marco Polini physics of graphene based van der Technology Waals Peter Armitage John Hopkins U. Low frequency electrodynamics of topological materials Session 6C Nanostructures Marija Drndic U. Pennsylvania Single nanopores and nanopore arrays in two dimensional materials: science and applications Radha Boya U. Manchester Atomically smooth angstrom scale capillaries Charlie Johnson U. Pennsylvania "Beyond" graphene enabled bio nano hybrids for programmable chemical detection Session 7C First Principles Modeling Francois Peeters U. Antwerp Turning the electronic properties of phosphorene: straining, stacking, gating and twisting Kyeongjae Cho U. Texas at Dallas DFT and KMC modeling of TMD Alejandro Strachan Purdue U. Ab initio studies of TMDs: new doping avenues and TMD/metal interfaces All Discussion Session 8C Graphene and More Dmitri Basov Columbia U. Polaritons in two dimensional van der Waals materials Matteo Calandra U. Pierre and Marie Curie Anupama Kaul U. North Texas All Discussion Half metallic multilayer graphene with rhombohedral stacking Van der Waals solids: enabling advances in printed electronics and photosensing applications
7 US EU 2D Workshop, Wednesday, October 25, 2017 James Hwang Lehigh U. Chair Frank Koppens IFCO Co chair Henri Happy U. Lille Scribe Session 9 Fundamental Properties Bart van Wees U. Groningen Spintronics in van der Waals Philip Kim Harvard U. Commensuration and incommensuration in the van der Waals heterojunctions Andrea Ferrari U. Cambridge Light scattering and emission from hetero structures Session 10 Conclusion Eric Pop Stanford U Deji Akinwande U. Texas Austin Report from breakout session A Philip Feng Case Western U. Andras Kis EPFL Susan Fullerton U. Pittsburgh Report from breakout session B Tania Roy U. Central Florida Francois Peeters U. Antwerp William Vandenberghe U. Texas at Dallas Report from breakout session C Gary Steele Delft U. Technology
2016 NSF-AFOSR-ARO-DTRA Workshop on Reproducible Advanced Technologies for Next-Generation Nano/Quantum Devices
2016 NSF-AFOSR-ARO-DTRA Workshop on Reproducible Advanced Technologies for Next-Generation Nano/Quantum Devices Day 1 8.00 8.30 Introduction: Dimitris Pavlidis (NSF), Samir El-Ghazaly (NSF) Ken Goretta
More informationHarris Engineering Center Room Central Florida Blvd, Orlando, FL Scientific Program
Harris Engineering Center Room 101 4000 Central Florida Blvd, Orlando, FL 32816 Scientific Program Friday, February 3, 2017 Registration open: 7.00AM Inauguration: 8.00 8.20AM 8.00-8.03: Introduction by
More informationElectronics with 2D Crystals: Scaling extender, or harbinger of new functions?
Electronics with 2D Crystals: Scaling extender, or harbinger of new functions? 1 st Workshop on Data Abundant Systems Technology Stanford, April 2014 Debdeep Jena (djena@nd.edu) Electrical Engineering,
More informationDARPA/SRC STARnet. Avram Bar-Cohen Program Manager MTO. US-EU Workshop on 2D Layered Materials and Devices. April 23, 2015
DARPA/SRC STARnet Avram Bar-Cohen Program Manager MTO US-EU Workshop on 2D Layered Materials and Devices April 23, 2015 STARnet Funded Universities University of Minnesota Carnegie Mellon Colorado State
More information2D MBE Activities in Sheffield. I. Farrer, J. Heffernan Electronic and Electrical Engineering The University of Sheffield
2D MBE Activities in Sheffield I. Farrer, J. Heffernan Electronic and Electrical Engineering The University of Sheffield Outline Motivation Van der Waals crystals The Transition Metal Di-Chalcogenides
More informationProgramme EU-China Workshop
Programme EU- Workshop The 2 nd Graphene Flagship EU- Workshop on Graphene and related 2D 07-08 December, 2018 Hotel Pullman Dresden Newa Prager Straße. 2C, 01069 Dresden, Germany Workshop chairs: Prof.
More informationDISTRIBUTION STATEMENT A
ASIAA/CCMS/IAMS/LeCosPA/NTU Phys Joint Colloquium 30 Oct 2012, NTU, Taipei, Taiwan Novel Materials and Devices for Millimeterwave and THz Applications Integrity Service Excellence Jim Hwang Program Officer,
More informationRank University AMJ AMR ASQ JAP OBHDP OS PPSYCH SMJ SUM 1 University of Pennsylvania (T) Michigan State University
Rank University AMJ AMR ASQ JAP OBHDP OS PPSYCH SMJ SUM 1 University of Pennsylvania 4 1 2 0 2 4 0 9 22 2(T) Michigan State University 2 0 0 9 1 0 0 4 16 University of Michigan 3 0 2 5 2 0 0 4 16 4 Harvard
More informationMulticomponent TMD Phase-field model with elastic heterogeneity
Multicomponent TMD Phase-field model with elastic heterogeneity Yang Xia Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, NJ 08544, USA Abstract A generalized semi 2D-model
More informationOverview. Carbon in all its forms. Background & Discovery Fabrication. Important properties. Summary & References. Overview of current research
Graphene Prepared for Solid State Physics II Pr Dagotto Spring 2009 Laurene Tetard 03/23/09 Overview Carbon in all its forms Background & Discovery Fabrication Important properties Overview of current
More informationNSF Quantum Information on a Chip Workshop
NSF Quantum Information on a Chip Workshop Monday Oct. 12, 2015 Padua, 12 14 Oct. 2015 University of Padua, Palazzo del Bo Archivio Antico 8:30am-10:20am Opening session, (30 Dominique Dagenais, NSF welcome
More informationOperating Principles of Vertical Transistors Based on Monolayer Two-Dimensional Semiconductor Heterojunctions
Operating Principles of Vertical Transistors Based on Monolayer Two-Dimensional Semiconductor Heterojunctions Kai Tak Lam, Gyungseon Seol and Jing Guo Department of Electrical and Computer Engineering,
More informationPhase Change and Piezoelectric Properties of Two-Dimensional Materials
Phase Change and Piezoelectric Properties of Two-Dimensional Materials April 22, 2015 Karel-Alexander Duerloo, Yao Li, Yao Zhou, Evan Reed Department of Materials Science and Engineering Stanford University
More informationBasic Research Innovation and Collaboration Center (BRICC) 4075 Wilson Blvd., Suite 350 Liberty Room Arlington, VA Agenda Day 1 July 11, 2017
Basic Research Innovation and Collaboration Center (BRICC) 4075 Wilson Blvd., Suite 350 Liberty Room Arlington, VA 22203 Agenda Day 1 July 11, 2017 Time Title Speaker 8:00 Registration 8:30 Welcome 8:50
More informationNanoscale optical imaging of multi-junction MoS2-WS2 lateral heterostructure
Nanoscale optical imaging of multi-junction MoS2-WS2 lateral heterostructure Jiru Liu 1, Wenjin Xue 1, Haonan Zong 1, Xiaoyi Lai 1, Prasana K. Sahoo 2, Humberto R. Gutierrez 2 and Dmitri V. Voronine 2
More informationBridging the Gap: Black Phosphorus for Electronics and Photonics
IBM Thomas J. Watson Research Center Bridging the Gap: Black Phosphorus for Electronics and Photonics Fengnian Xia Department of Electrical Engineering Yale University, New Haven CT 06511 Email: fengnian.ia@yale.edu
More informationCURRICULUM VITAE HUAMIN LI UPDATED: DECEMBER 1, 2015 MAIN RESEARCH INTERESTS EDUCATION
CURRICULUM VITAE HUAMIN LI UPDATED: DECEMBER 1, 2015 Postdoctoral Research Associate Center for Low Energy Systems Technology (LEAST), Department of Electrical Engineering University of Notre Dame, B20
More informationSupplementary Figure 1: MoS2 crystals on WSe2-EG and EG and WSe2 crystals on MoSe2-EG and EG.
Supplementary Figure 1: MoS2 crystals on WSe2-EG and EG and WSe2 crystals on MoSe2-EG and EG. (a) The MoS2 crystals cover both of EG and WSe2/EG after the CVD growth (Scar bar: 400 nm) (b) shows TEM profiles
More informationMonolayer Semiconductors
Monolayer Semiconductors Gilbert Arias California State University San Bernardino University of Washington INT REU, 2013 Advisor: Xiaodong Xu (Dated: August 24, 2013) Abstract Silicon may be unable to
More informationScientific Program. Opening and Welcome Victor Lopez Richard Quantum dot architecture for 15:30-16:00
Scientific Program Monday, September 18 12:00-13:00 Registration 13:00-15:00 Lunch 15:00-15:30 Opening and Welcome Victor Lopez Richard Quantum dot architecture for 15:30-16:00 memristive and memcapacitive
More informationDS Digital CMOS Technologies/Memory Technologies/Modeling & Simulation/Compact Modeling Reviews
DS Digital CMOS Technologies/Memory Technologies/Modeling & Simulation/Compact Modeling Reviews Date: Monday, April 8, 2013, 8 a.m. Thursday, April 11, 5 p.m. PT Location: University of California at Santa
More informationGraphene Fundamentals and Emergent Applications
Graphene Fundamentals and Emergent Applications Jamie H. Warner Department of Materials University of Oxford Oxford, UK Franziska Schaffel Department of Materials University of Oxford Oxford, UK Alicja
More informationMicroscopy, topological states of matter, graphene and low dimensional materials, solid state realizations of quantum information processing.
Monica T. Allen CONTACT INFORMATION RESEARCH INTERESTS 476 Lomita Mall, Stanford University E-mail: mtallen@stanford.edu Stanford, CA 94305-4045 Web: http://web.stanford.edu/ mtallen Microscopy, topological
More informationScaling up Chemical Vapor Deposition Graphene to 300 mm Si substrates
Scaling up Chemical Vapor Deposition Graphene to 300 mm Si substrates Co- Authors Aixtron Alex Jouvray Simon Buttress Gavin Dodge Ken Teo The work shown here has received partial funding from the European
More informationMonday // 22. February :45 Opening. 2D Materials Chair: Jonathan Finley (TU München)
Monday // 22. February 2016 8:45 Opening MoM: 2D Materials Chair: Jonathan Finley (TU München) 9:00 10:20 Tony F. Heinz (Stanford Univ.) > Tutorial: Two-Dimensional Materials - Graphene and Beyond 10:40
More informationSTC for Integrated Quantum Materials
STC for Integrated Quantum Materials NSF Grant DMR 1231319 http://ciqm.harvard.edu Harvard University PI Robert Westervelt Howard University co-pi Gary Harris Massachusetts Institute of Technology co-pi
More informationNanoelectronics Research Initiative Sanjay Banerjee Director, Microelectronics Research Center and SWAN University of Texas
Nanoelectronics Research Initiative Sanjay Banerjee Director, Microelectronics Research Center and SWAN University of Texas Jeff Welser, Director, NRI Ralph Cavin, SRC NRI Goals Case Study: SWAN NRI-NSF
More informationGraphene: Plane and Simple Electrical Metrology?
Graphene: Plane and Simple Electrical Metrology? R. E. Elmquist, F. L. Hernandez-Marquez, M. Real, T. Shen, D. B. Newell, C. J. Jacob, and G. R. Jones, Jr. National Institute of Standards and Technology,
More informationPresenters. Keynote Speaker Luigi Colombo, Texas Instruments
Presenters Keynote Speaker Luigi Colombo, Texas Instruments s Manish Chhowalla, Rutgers University Ali Javey, University of California-Berkeley Brian LeRoy, University of Arizona Nicholas J. Borys, Molecular
More informationPhysics in two dimensions in the lab
Physics in two dimensions in the lab Nanodevice Physics Lab David Cobden PAB 308 Collaborators at UW Oscar Vilches (Low Temperature Lab) Xiaodong Xu (Nanoscale Optoelectronics Lab) Jiun Haw Chu (Quantum
More information2 nd International Workshop - Natural and Artificial Photosynthesis, Bioenergetics and Sustainability
Pre-registration: 10 June 2012 (Sunday) 02:00 pm - 06:00 pm Pre-registration Day 1 Program: 11 June 2012 (Monday) 08:00 am - 09:00 am Registration 09:00 am - 09:30 am Welcome address by PHUA Kok Khoo (Director,
More information5th Friday 6th Saturday 7th Sunday 8th Monday. 9:00-9:05 Sishen Xie Chairman Xincheng Xie Fuchun Zhang Thomas Palstra 9:05-9:40 Ruirui Du
Schedule 5th Friday 6th Saturday 7th Sunday 8th Monday Chairman Wei Bao 9:00-9:05 Sishen Xie Chairman Xincheng Xie Fuchun Zhang Thomas Palstra 9:05-9:40 Ruirui Du 9:00-9:35 Wei Bao 9:00-9:35 Jian Wang
More informationGRAPHENE CONNECT. New Materials and Devices
GRAPHENE CONNECT New Materials and Devices Thursday, 28 September 2017, 14:00-19:00 taking place during Graphene Week 2017 Divani Caravel Hotel, Room Horizon, Floor R.G. Athens, Greece Funded by the European
More informationNUS Italian Graphene Centre workshop 2014 : Talks Schedule
NUS Italian Graphene Centre workshop 2014 : Talks Schedule Time Monday, March 17 Tuesday, March 18 8:30 9:00 Opening by Prof Antonio Castro Neto (NUS) 9:00 9:45 Prof Vittorio Pellegrini (ITT) Prof Antonio
More information3C3 Analogue Circuits
Department of Electronic & Electrical Engineering Trinity College Dublin, 2014 3C3 Analogue Circuits Prof J K Vij jvij@tcd.ie Lecture 1: Introduction/ Semiconductors & Doping 1 Course Outline (subject
More informationTRANSVERSE SPIN TRANSPORT IN GRAPHENE
International Journal of Modern Physics B Vol. 23, Nos. 12 & 13 (2009) 2641 2646 World Scientific Publishing Company TRANSVERSE SPIN TRANSPORT IN GRAPHENE TARIQ M. G. MOHIUDDIN, A. A. ZHUKOV, D. C. ELIAS,
More informationSupporting Information
Supporting Information Monolithically Integrated Flexible Black Phosphorus Complementary Inverter Circuits Yuanda Liu, and Kah-Wee Ang* Department of Electrical and Computer Engineering National University
More informationSession Chair: Prof. Haiping Cheng (University of Florida) Dr. Lei Shen. National University of Singapore
B1. Modeling Quantum Transport at Nanoscale Chair(s): Chun ZHANG, National University of Singapore, Singapore Session s Title (if available) Tue - 17 Jan 2017 13:00 ~ 14:30 Room 2 Session Chair: Prof.
More informationSFB/Transregio 21. Workshop CO.CO.MAT Common perspectives of mesoscopic systems and quantum gases
/Transregio 21 Workshop 2014 CO.CO.MAT Common perspectives of mesoscopic systems and quantum gases October, 5 th 8 th, 2014 Schloss Reisensburg, Günzburg Arrival: Departure (non ): Departure (): Sunday,
More informationSession V: Graphene. Matteo Bruna CAMBRIDGE UNIVERSITY DEPARTMENT OF ENGINEERING
Session V: Graphene Matteo Bruna Graphene: Material in the Flatland Graphite Graphene Properties: Thinnest imaginable material Good(and tunable) electrical conductor Strongest ever measured Stiffest known
More information2D Materials for Gas Sensing
2D Materials for Gas Sensing S. Guo, A. Rani, and M.E. Zaghloul Department of Electrical and Computer Engineering The George Washington University, Washington DC 20052 Outline Background Structures of
More informationWafer-scale fabrication of graphene
Wafer-scale fabrication of graphene Sten Vollebregt, MSc Delft University of Technology, Delft Institute of Mircosystems and Nanotechnology Delft University of Technology Challenge the future Delft University
More informationContact Engineering of Two-Dimensional Layered Semiconductors beyond Graphene
Contact Engineering of Two-Dimensional Layered Semiconductors beyond Graphene Zhixian Zhou Department of Physics and Astronomy Wayne State University Detroit, Michigan Outline Introduction Ionic liquid
More informationBlack phosphorus: A new bandgap tuning knob
Black phosphorus: A new bandgap tuning knob Rafael Roldán and Andres Castellanos-Gomez Modern electronics rely on devices whose functionality can be adjusted by the end-user with an external knob. A new
More informationIndustry and Sustainable Nanotechnology. Dr. Celia Merzbacher VP for Innovative Partnerships Semiconductor Research Corporation
Industry and Sustainable Nanotechnology How can nanotechnology make industry more sustainable? A semiconductor industry perspective Dr. Celia Merzbacher VP for Innovative Partnerships Semiconductor Research
More informationBeyond-CMOS Device Concepts Enabled by 2D Materials
Beyond-CMOS Device Concepts Enabled by 2D Materials Working Dinner Remarks at NSF US EU Workshop on 2D Materials April 23, 2015 Thomas N Theis Executive Director SRC Nanoelectronics Research Initiative
More informationNEM Relays Using 2-Dimensional Nanomaterials for Low Energy Contacts
NEM Relays Using 2-Dimensional Nanomaterials for Low Energy Contacts Seunghyun Lee, Ji Cao 10/29/2013 A Science & Technology Professor H. -S. Philip Wong Electrical Engineering, Stanford University Center
More informationThe Workshop on Recent Progress in Theoretical and Computational Studies of 2D Materials Program
The Workshop on Recent Progress in Theoretical and Computational Program December 26-27, 2015 Beijing, China December 26-27, 2015, Beijing, China The Workshop on Recent Progress in Theoretical and Computational
More informationVulnerabilities in Analog and Digital Electronics. Microelectronics and Computer Group University of Maryland & Boise State University
Vulnerabilities in Analog and Digital Electronics Microelectronics and Computer Group University of Maryland & Boise State University Vulnerabilities in Analog and Digital Electronics Overview The Fundamental
More informationLecture 20: Semiconductor Structures Kittel Ch 17, p , extra material in the class notes
Lecture 20: Semiconductor Structures Kittel Ch 17, p 494-503, 507-511 + extra material in the class notes MOS Structure Layer Structure metal Oxide insulator Semiconductor Semiconductor Large-gap Semiconductor
More informationUltrathin transitionmetal dichalcogenides and 2D optoelectronics
76 Technology focus: Thin-film materials Ultrathin transitionmetal dichalcogenides and 2D optoelectronics A strong coupling of light and electrons and holes in ultrathin transition-metal dichalcogenides
More informationCoulomb Drag in Graphene
Graphene 2017 Coulomb Drag in Graphene -Toward Exciton Condensation Philip Kim Department of Physics, Harvard University Coulomb Drag Drag Resistance: R D = V 2 / I 1 Onsager Reciprocity V 2 (B)/ I 1 =
More informationCMOS Scaling. Two motivations to scale down. Faster transistors, both digital and analog. To pack more functionality per area. Lower the cost!
Two motivations to scale down CMOS Scaling Faster transistors, both digital and analog To pack more functionality per area. Lower the cost! (which makes (some) physical sense) Scale all dimensions and
More informationOverview of the 2DCC-MIP for Potential Users Webinar 6/28/16
Overview of the 2DCC-MIP for Potential Users Webinar 6/28/16 NSF cooperative agreement DMR-1539916 What s a MIP? Materials Innovation Platform Created in response to NAS, NSF MPSAC and MGI Reports MIPS
More informationGraphene and Carbon Nanotubes
Graphene and Carbon Nanotubes 1 atom thick films of graphite atomic chicken wire Novoselov et al - Science 306, 666 (004) 100μm Geim s group at Manchester Novoselov et al - Nature 438, 197 (005) Kim-Stormer
More informationPima Community College Students who Enrolled at Top 200 Ranked Universities
Pima Community College Students who Enrolled at Top 200 Ranked Universities Institutional Research, Planning and Effectiveness Project #20170814-MH-60-CIR August 2017 Students who Attended Pima Community
More informationNews from NBIA. Condensed Matter Physics: from new materials to quantum technology. time. Mark Rudner
News from NBIA Condensed Matter Physics: from new materials to quantum technology Mark Rudner time ~100 years after Bohr, the basic laws and players are established 1913 2013 Image from www.periodni.com
More information1. Nanotechnology & nanomaterials -- Functional nanomaterials enabled by nanotechnologies.
Novel Nano-Engineered Semiconductors for Possible Photon Sources and Detectors NAI-CHANG YEH Department of Physics, California Institute of Technology 1. Nanotechnology & nanomaterials -- Functional nanomaterials
More informationSolid Surfaces, Interfaces and Thin Films
Hans Lüth Solid Surfaces, Interfaces and Thin Films Fifth Edition With 427 Figures.2e Springer Contents 1 Surface and Interface Physics: Its Definition and Importance... 1 Panel I: Ultrahigh Vacuum (UHV)
More informationALD high-k and higher-k integration on GaAs
ALD high-k and higher-k integration on GaAs Ozhan Koybasi 1), Min Xu 1), Yiqun Liu 2), Jun-Jieh Wang 2), Roy G. Gordon 2), and Peide D. Ye 1)* 1) School of Electrical and Computer Engineering, Purdue University,
More informationA final review session will be offered on Thursday, May 10 from 10AM to 12noon in 521 Cory (the Hogan Room).
A final review session will be offered on Thursday, May 10 from 10AM to 12noon in 521 Cory (the Hogan Room). The Final Exam will take place from 12:30PM to 3:30PM on Saturday May 12 in 60 Evans.» All of
More informationPh.D. students, postdocs, and young researchers, which need to absorb a lot of new knowledge, not taught at universities, in a rather short time.
We have started to work in the area of graphene at the end of 2006, discovering that the fascinating Dirac equations could drive to new discoveries in solid-state physics. At that time, although the Dirac
More informationTransport Properties of Graphene Nanoribbon Transistors on. Chemical-Vapor-Deposition Grown Wafer-Scale Graphene
Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene Wan Sik Hwang 1, a), Kristof Tahy 1, Xuesong Li 2, Huili (Grace) Xing 1, Alan C. Seabaugh
More informationCurriculum Vitae. Joshua A. Folk. Current Address: 2355 East Mall, Rm 118 Vancouver, BC V6T 1Z
Curriculum Vitae Joshua A. Folk jfolk@physics.ubc.ca Current Address: 2355 East Mall, Rm 118 Vancouver, BC V6T 1Z4 604-827-3206 Education: 1998-2003 PhD in Physics. Stanford University. 1991-1995 Bachelor
More informationPin-Chun Shen M.S. Photonics and Optoelectronics National Taiwan University, 2014
Large-area CVD Growth of Two-dimensional Transition Metal Dichalcogenides and Monolayer MoS 2 and WS 2 Metal oxide semiconductor Field-effect Transistors by Pin-Chun Shen M.S. Photonics and Optoelectronics
More informationarxiv: v2 [cond-mat.mtrl-sci] 11 Sep 2016
arxiv:1608.05057v2 [cond-mat.mtrl-sci] 11 ep 2016 Transport in vertically stacked hetero-structures from 2D materials Fan Chen, Hesameddin Ilatikhameneh, Yaohua Tan, Daniel Valencia, Gerhard Klimeck and
More informationUW Physics REU 2018 Project List. Experimental Projects
Below is the list of UW Physics REU 2018 Projects. This is representative of the projects we plan to offer in 2019. An updated list will be available soon. UW Physics REU 2018 Project List Projects are
More informationSUPPLEMENTARY INFORMATION. Observation of tunable electrical bandgap in large-area twisted bilayer graphene synthesized by chemical vapor deposition
SUPPLEMENTARY INFORMATION Observation of tunable electrical bandgap in large-area twisted bilayer graphene synthesized by chemical vapor deposition Jing-Bo Liu 1 *, Ping-Jian Li 1 *, Yuan-Fu Chen 1, Ze-Gao
More informationFundamentals of Nanoelectronics: Basic Concepts
Fundamentals of Nanoelectronics: Basic Concepts Sławomir Prucnal FWIM Page 1 Introduction Outline Electronics in nanoscale Transport Ohms law Optoelectronic properties of semiconductors Optics in nanoscale
More informationCenter for Integrated Nanostructure Physics (CINAP)
Center for Integrated Nanostructure Physics (CINAP) - Institute for Basic Science (IBS) was launched in 2012 by the Korean government to promote basic science in Korea - Our Center was established in 2012
More informationLow Frequency Noise in MoS 2 Negative Capacitance Field-effect Transistor
Low Frequency Noise in MoS Negative Capacitance Field-effect Transistor Sami Alghamdi, Mengwei Si, Lingming Yang, and Peide D. Ye* School of Electrical and Computer Engineering Purdue University West Lafayette,
More informationClassification of Solids
Classification of Solids Classification by conductivity, which is related to the band structure: (Filled bands are shown dark; D(E) = Density of states) Class Electron Density Density of States D(E) Examples
More informationSynthesis and Characterization of the 2-Dimensional Transition Metal Dichalcogenides
Portland State University PDXScholar Dissertations and Theses Dissertations and Theses Winter 3-3-2017 Synthesis and Characterization of the 2-Dimensional Transition Metal Dichalcogenides Robert Browning
More informationDrift-diffusion model for single layer transition metal dichalcogenide field-effect transistors
Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors David Jiménez Departament d'enginyeria Electrònica, Escola d'enginyeria, Universitat Autònoma de Barcelona,
More informationSeminars in Nanosystems - I
Seminars in Nanosystems - I Winter Semester 2011/2012 Dr. Emanuela Margapoti Emanuela.Margapoti@wsi.tum.de Dr. Gregor Koblmüller Gregor.Koblmueller@wsi.tum.de Seminar Room at ZNN 1 floor Topics of the
More informationCall for Papers. 3 Steps to Contribute a Presentation. Submit. Submission Deadline: June 26 (Tue.), 2018 (17:00, JST)
Call for Papers 3 Steps to Contribute a Presentation Join JSAP Submit Register Regular Membership Admission Fee: 10,000 JPY Annual Due*: 10,000 JPY *Annual due will be waived for the first year. Graduate
More informationThéorie Quan-que des Materiaux (TQM) Ins-tut de Minéralogie et de Physique des Milieux Condensés. M. Calandra, F. Mauri, L. M.
+ Théorie Quan-que des Materiaux (TQM) Ins-tut de Minéralogie et de Physique des Milieux Condensés + M. Calandra, F. Mauri, L. Paula@o, M. Casula TEAM EXPERIENCE The team has a proven succesful exper-se
More informationElectronic and optical properties of 2D (atomically thin) InSe crystals
Electronic and optical properties of 2D (atomically thin) InSe crystals Vladimir Falko National Graphene Institute Zoo of 2D Materials layered substances with covalent bonding within the layers and van
More informationNanoelectronics 08. Atsufumi Hirohata Department of Electronics. Quick Review over the Last Lecture E = 2m 0 a 2 ξ 2.
Nanoelectronics 08 Atsufumi Hirohata Department of Electronics 09:00 Tuesday, 6/February/2018 (P/T 005) Quick Review over the Last Lecture 1D quantum well : E = 2 2m 0 a 2 ξ 2 ( Discrete states ) Quantum
More informationQS School Summary
2018 NSF/DOE/AFOSR Quantum Science Summer School June 22, 2018 QS 3 2018 School Summary Kyle Shen (Cornell) Some Thank yous! A Big Thanks to Caroline Brockner!!! Also to our fantastic speakers! Kavli Institute
More informationQuantum Computing: From Science to Application Dr. Andreas Fuhrer Quantum technology, IBM Research - Zurich
Quantum Computing: From Science to Application Dr. Andreas Fuhrer Quantum technology, IBM Research - Zurich IBM Research - Zurich Established in 1956 Focus: science & technology, systems research, computer
More information2003 National Name Exchange Annual Report
2003 National Name Exchange Annual Report Executive Summary 28 th annual meeting Hilton, University of Florida Conference Center April 16, 2004 Hosted by the University of Florida http://www.grad.washington.edu/nameexch/national/
More informationScalable Nanomaterials and Nanostructures for Energy and Flexible Electronics
Scalable Nanomaterials and Nanostructures for Energy and Flexible Electronics Liangbing (Bing) Hu MSE & Energy Center University of Maryland College Park Email: binghu@umd.edu 1 Transparent Paper from
More informationGraphene/2D Integration: Progress, Challenges and Applications
Graphene/2D Integration: Progress, Challenges and Applications ABSTRACT We will present the progress in graphene growth, transfer, integration and applications. This will include i) wafer-scale growth
More informationChallenges for Materials to Support Emerging Research Devices
Challenges for Materials to Support Emerging Research Devices C. Michael Garner*, James Hutchby +, George Bourianoff*, and Victor Zhirnov + *Intel Corporation Santa Clara, CA + Semiconductor Research Corporation
More informationStrong light matter coupling in two-dimensional atomic crystals
SUPPLEMENTARY INFORMATION DOI: 10.1038/NPHOTON.2014.304 Strong light matter coupling in two-dimensional atomic crystals Xiaoze Liu 1, 2, Tal Galfsky 1, 2, Zheng Sun 1, 2, Fengnian Xia 3, Erh-chen Lin 4,
More informationBeyond silicon electronics-fets with nanostructured graphene channels with high on-off ratio and highmobility
Beyond silicon electronics-fets with nanostructured graphene channels with high on-off ratio and highmobility M.Dragoman 1, A.Dinescu 1, and D.Dragoman 2 1 National Institute for Research and Development
More informationPaper and Cellulosic Materials as Flexible Substrates for 2D Electronic Materials
Paper and Cellulosic Materials as Flexible Substrates for 2D Electronic Materials Prof. Eric M. Vogel, Prof. M. Shofner, Brian Beatty Materials Science & Engineering Trends in Electronics Internet of things
More informationSupplementary Information
Supplementary Information Ambient effects on electrical characteristics of CVD-grown monolayer MoS 2 field-effect transistors Jae-Hyuk Ahn, 1,2 William M. Parkin, 1 Carl H. Naylor, 1 A. T. Charlie Johnson,
More information(a) (b) Supplementary Figure 1. (a) (b) (a) Supplementary Figure 2. (a) (b) (c) (d) (e)
(a) (b) Supplementary Figure 1. (a) An AFM image of the device after the formation of the contact electrodes and the top gate dielectric Al 2 O 3. (b) A line scan performed along the white dashed line
More informationAbstract. Introduction
Two Dimensional Maps of Photoluminescence and Second Harmonic Generation Tara Boland University of North Dakota University of Washington INT REU, 2014 Advisor: Xiaodong Xu (Dated: August 31, 2014) Abstract
More informationSemiconductor Physics and Devices
Syllabus Advanced Nano Materials Semiconductor Physics and Devices Textbook Donald A. Neamen (McGraw-Hill) Semiconductor Physics and Devices Seong Jun Kang Department of Advanced Materials Engineering
More informationChiral electroluminescence from 2D material based transistors
New Perspectives in Spintronic and Mesoscopic Physics (NPSMP2015) June 10-12, 2015 Kashiwanoha, Japan Chiral electroluminescence from 2D material based transistors Y. Iwasa University of Tokyo & RIKEN
More informationNanotechnology in Consumer Products
Nanotechnology in Consumer Products June 17, 2015 October 31, 2014 The webinar will begin at 1pm Eastern Time Perform an audio check by going to Tools > Audio > Audio Setup Wizard Chat Box Chat Box Send
More information! Previously: simple models (0 and 1 st order) " Comfortable with basic functions and circuits. ! This week and next (4 lectures)
ESE370: CircuitLevel Modeling, Design, and Optimization for Digital Systems Lec 6: September 18, 2017 MOS Model You are Here: Transistor Edition! Previously: simple models (0 and 1 st order) " Comfortable
More informationNanostructures. Lecture 13 OUTLINE
Nanostructures MTX9100 Nanomaterials Lecture 13 OUTLINE -What is quantum confinement? - How can zero-dimensional materials be used? -What are one dimensional structures? -Why does graphene attract so much
More informationEC 577 / MS 577: Electrical Optical and Magnetic Properties of Materials Professor Theodore. D. Moustakas Fall Semester 2012
EC 577 / MS 577: Electrical Optical and Magnetic Properties of Materials Professor Theodore. D. Moustakas Fall Semester 2012 Office: 8 St. Mary s Street, Room no: 835 Phone: 353-5431 e-mail: tdm@bu.edu
More informationChun Ning Lau (Jeanie) Quantum Transport! in! 2D Atomic Membranes!
Chun Ning Lau (Jeanie) Quantum Transport! in! 2D Atomic Membranes! 2D Materials and Heterostructures! hbn MoS 2 WSe 2 Fluorographene Geim, Nature 2013. Conductors, e.g. graphene, few-layer graphene Semiconductors,
More informationGraphene Process and Device Options for Microelectronics Applications
Graphene Process and Device Options for Microelectronics Applications Max Lemme KTH Royal Institute of Technology School of Information and Communication Technology lemme@kth.se 31 May 2012 Graphene Process
More informationCarbon-Based Electronics: Will there be a carbon age to follow the silicon age? Jeffrey Bokor EECS Department UC Berkeley
Carbon-Based Electronics: Will there be a carbon age to follow the silicon age? Jeffrey Bokor EECS Department UC Berkeley jbokor@eecs.berkeley.edu Solid State Seminar 9-13-13 1 Outline Review of development
More information