Photo-Voltaics and Solar Cells. Photo-Voltaic Cells
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1 Photo-Voltaics ad Solar Cells this lecture you will lear: Photo-Voltaic Cells Carrier Trasort, Curret, ad Efficiecy Solar Cells Practical Photo-Voltaics ad Solar Cells ECE 407 Srig 009 Farha aa Corell Uiversity A device that roduces a curret whe eosed to light.!! (e.g. a solar cell) Short Circuit Outut Curret: Photo-Voltaic Cells Photovoltaic Cell = Short circuit curret due to light ight ower = Eergy er sec = P ic = Short circuit curret due to light Eteral Quatum Efficiecy: (Outut curret) / q EQE = (cidet light ower) / P ic q Eteral quatum efficiecy comares the umber of electros roduced i the eteral circuit er secod (uder a short circuit coectio) to the umber of hotos icidet o the device er secod ECE 407 Srig 009 Farha aa Corell Uiversity 1
2 Photo-Voltaic Cells Coected to a oad Photovoltaic Cell ight ower = Eergy er sec = P ic Power Coversio Efficiecy: Power delivered to the load E = cidet light ower P ic = Curret whe a load resistor is reset How much electrical ower ca be delivered to a load resistor? t will ot be just Because will chage (i.e. will ot equal ) whe a load resistor is reset ECE 407 Srig 009 Farha aa Corell Uiversity Cosider the stadard diode: PN iodes as Photo-Voltaic Cells P-doed N-doed -W V W + qv KT 1 o e The diode ca be used as a hoto cell that geerates electrical ower whe eosed to light.!! Such a device is a called a hoto-voltaic cell (e.g. a solar cell) ECE 407 Srig 009 Farha aa Corell Uiversity
3 PN Juctio Photo-Voltaic Cells: Some tuitio 1) Suose a hoto creates oe electro-hole air: P-doed N-doed Short circuit oeratio -W - - W + ) Quasi eutrality imlies that electro ad hole stay together 3) f they recombie ed of story! = 0 P-doed N-doed -W - - W + 4) f they diffuse ad reach the metal cotact, they recombie ed of story! = 0 P-doed N-doed -W - - W + ECE 407 Srig 009 Farha aa Corell Uiversity PN Juctio Photo-Voltaic Cells: Some tuitio 5) f they diffuse ad reach the juctio, they searate (because of the E-field i the juctio): P-doed N-doed -W - - W + P-doed N-doed -W - - W + 6) They cotribute oe uit of charge to the eteral curret P-doed N-doed -W - - W + ECE 407 Srig 009 Farha aa Corell Uiversity 3
4 Boudary Coditios ' W 0 ight P-doed N-doed ' W 0 -W - - W + Short the device outut Shie light uiformly o the P-side How much curret flows i the eteral circuit? qv ' i KT 1 e 0 ' i KT 1 e 0 N N d a qv No ecess carrier desities at the edges of the deletio regio ECE 407 Srig 009 Farha aa Corell Uiversity ight Carrier Trasort P-doed N-doed -W - - W + Electro ad hole geeratio rate o the P-side: Start from the steady state equatio: o ' Equilibrium electro desity G 1 J 0 G q (uits: er uit volume er sec) Ecess electro desity The the geeratio-recombiatio term becomes: Ad we get: G o ' G G i N iffusio equatio for ' ' G the ecess electro desity a ECE 407 Srig 009 Farha aa Corell Uiversity 4
5 ight Carrier Trasort P-doed N-doed -W - - W + We eed to solve: ' Assume the short-base limit (o recombiatio): Solutio is: ' G ' ' i e KT 1 0 N a W 0 qv ' e 1 0 ' ' G ' G W i N a W 0 qv KT ECE 407 Srig 009 Farha aa Corell Uiversity ight Carrier Trasort P-doed N-doed -W - - W + ' Solutio is: -W - - ' G W ' G ' W Quasi-eutrality ECE 407 Srig 009 Farha aa Corell Uiversity 5
6 ight Carrier Trasort P-doed N-doed -W - - W + ' ' J ' q -W - J - W qg Miority carriers flow by diffusio oly -W - - W + ECE 407 Srig 009 Farha aa Corell Uiversity ight Carrier Trasort P-doed N-doed -W - - W + J ' q J W qg J -W - J T J T J - W + W qg ECE 407 Srig 009 Farha aa Corell Uiversity 6
7 ight Eteral Curret P-doed N-doed -W - - W + J J J T -W - - W + AJT q GAW Total umber of electro-hole airs geerated i the etire P-side er secod ECE 407 Srig 009 Farha aa Corell Uiversity ight Eteral Quatum Efficiecy P-doed N-doed -W - - W + EQE = (Outut curret) / q (cidet light ower) / P ic q Suose every icidet hoto geerates oe electro-hole air, the: The: Pic GA W q EQE GA W 1 Why just oe-half? Every icidet hoto geerates oe electro-hole air but oly half of the geerated electro-hole airs cotribute to the eteral curret! ECE 407 Srig 009 Farha aa Corell Uiversity 7
8 Photo-Ecitatio i the eletio egio Suose light is ow show o the juctio deletio regio 1) A hoto creates a electro-hole air -W - P-doed - N-doed W + ) They are searated by the large E-field i the juctio P-doed N-doed -W - - W + 3) They cotribute oe uit of charge to the eteral circuit P-doed N-doed -W - - W + ECE 407 Srig 009 Farha aa Corell Uiversity Suose light is ow show o the juctio regio Photo-Ecitatio i the eletio egio P-doed ight N-doed -W - - W + Electro Curret (assumig o recombiatio iside the deletio regio): 0 ' 1 J G Go G o G t q 1 J tegrate over the d G d deletio regio q J J q G d qg Hole Curret (assumig o recombiatio iside the deletio regio): J 1 J q J q G d qg G G o G o G ECE 407 Srig 009 Farha aa Corell Uiversity 8
9 J J 0 0 Photo-Ecitatio i the eletio egio -W - P-doed ight - N-doed W + Electro ad Hole Curret: The electric field iside the deletio regio swees the electros towards the -side ad the holes towards the -side. Cosequetly, it must be that: 0 J J q G d qg J 0 J q G d qg Total Curret: JT J J J J qg 0 0 ECE 407 Srig 009 Farha aa Corell Uiversity J 1 q G 1 J q G Photo-Ecitatio i the eletio egio -W - P-doed ight - N-doed W + AJT qga J J T J -W - - W + Eteral Quatum Efficiecy: q EQE GA 1 ECE 407 Srig 009 Farha aa Corell Uiversity 9
10 Commo Photo-Voltaic Structures A PN Juctio Photodetector Passivatio ight A coatig The deletio regio is ot thick eough 0 + doed Metal cotacts doed substrate ight A coatig A PN Juctio Photodetector Passivatio + doed The deletio regio ca be very thick! 0 itrisic Metal cotacts doed substrate ECE 407 Srig 009 Farha aa Corell Uiversity Solar Cells ECE 407 Srig 009 Farha aa Corell Uiversity 10
11 PN Photo-Voltaic Cells as Solar Cells + V - P-doed ight P ic qg A N-doed -W - - W + + V - The circuit curret has two comoets: i) The curret due to the biased juctio give as: qv KT o e 1 ii) The curret due to hotogeeratio These two comoets ca be added together (why?) to give the total curret: qv KT e o 1 ECE 407 Srig 009 Farha aa Corell Uiversity PN Photo-Voltaic Cells as Solar Cells ight P ic + V - We have: qv KT o e 1 -W - P-doed - N-doed W + We also have the load-lie equatio: V Solutio of these two equatios gives the oeratig oit V qv KT o e 1 Grahical solutio: V oc V sc =- creasig ECE 407 Srig 009 Farha aa Corell Uiversity 11
12 Electrical Power Outut Power delivered to the load resistor: Pout V qv KT o e 1 V ight P ic + V - -W - P-doed N-doed W + Power delivered to the load is give by the area of the lightly shaded regio There is a otimal value of the load resistor that allows maimum ower delivery to the load V V oc qv KT o e 1 V sc =- ECE 407 Srig 009 Farha aa Corell Uiversity Eergy Coversio Efficiecy Power delivered to the load resistor: Pout V qv KT o e 1 V ight P ic + V - -W - P-doed + V - - N-doed W + Eteral Power Coversio Efficiecy: P E out Pic V Pic V qv KT o e 1 Fill Factor = FF = Area of lightly shaded regio Area of dark shaded regio V scvoc sc =- V oc V ECE 407 Srig 009 Farha aa Corell Uiversity 1
13 esig of Silico Solar Cells The PE Si solar cell (Gree et al., 1994) Efficiecy ~5% + Eergy Coversio Efficiecies of Some Commo Solar Cells Tyical Performaces of Semicoductor Photocells (Gree at al., Prog. Photovolt: es. Al., 17, 85 (009)) Material Voc (V) Jsc (Am/cm ) FF (%) Efficiecy (%) Crystallie Si Crystallie GaAs Poly-Si a-si CuGaSe (CGS) CdTe ECE 407 Srig 009 Farha aa Corell Uiversity esig of Solar Cell Modules The V characteristics of juctios coected i series must idetical (or early so) ECE 407 Srig 009 Farha aa Corell Uiversity 13
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