NLX1G99. Configurable Multifunction Gate

Transcription

1 NX1G99 Configurable Multifunction Gate The NX1G99 MiniGate is an advanced high speed CMOS multifunction gate with a 3 state output. With the output enable input () at igh, the output is disabled and is kept at high impedance. With the output enable input () at ow, the device can be configured for logic functions such as MUX, AND, OR, NAND, NOR, XOR, XNOR, INERT and BUFFER, depending on the combination of the 4 bit input. The device has Schmitt trigger inputs, thereby enhancing noise immunity. The NX1G99 input and output structures provide protection when voltages up to 7. are applied, regardless of the supply voltage. Features igh Speed: t PD = 6.7 ns CC = 3.3 ow Power Dissipation: I CC = 1 A (Max) at T A = 5 C Power Down Protection Provided on inputs Balanced Propagation Delays Overvoltage Tolerant (OT) and Pins Ultra Small Packages These Devices are Pb Free, alogen Free/BFR Free and are RoS Compliant PIN ASSIGNMENT 1 A 3 B 4 GND 5 C 6 D 7 UDFN x 1.0 CASE 517BZ UDFN8 1.6 x 1.0 CASE 517B UDFN x 1.0 CASE 517CA AA or E = Specific Device Code M = Date Code = Pb Free Package MARKING DIAGRAMS ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 1 of this data sheet X M X M AF M 8 CC PIN ASSIGNMENTS 1 8 CC A 7 B 3 6 D GND 4 5 (Top iew) C Semiconductor Components Industries, C, 016 June, 016 Rev. 6 1 Publication Order Number: NX1G99/D

2 NX1G99 FUNCTION DIAGRAM A B C D Figure 1. Function Diagram FUNCTION TABE* INPUT OUTPUT D C B A or or or or Z *To select a logic function, please refer to ogic Configurations section. FUNCTION SEECTION OGIC CONFIGURATION PAGE 3 State Buffers 3 3 State Inverters 3 3 State MUXes 3 / OR / NOR 4 3 State NAND / OR 5 3 State XOR/XNOR 6

3 NX1G99 OGIC CONFIGURATIONS 3 State Buffer Functions Available Figure. Function A B C D 3 State Buffer or or or or or 3 State Inverter Functions Available Figure 3. Function A B C D 3 State Buffer X or or or or 3 State MUX Functions Available A/B A/B Figure 4. Function A B C D 3 State to 1 3 State to 1 3 State to 1, Inverted Out 3 State to 1, Inverted Out or or or or 3

4 NX1G99 /NOR/OR Function Available Figure 5. No. of s AND/NAND Function OR/NOR Function A B C D 3 State NOR 3 State NOR Figure 6. No. of s AND/NAND Function OR/NOR Function A B C D 3 State NOR 3 State NOR Figure 7. No. of s AND/NAND Function OR/NOR Function A B C D 3 State NOR 3 State NOR Figure 8. No. of s AND/NAND Function OR/NOR Function A B C D 4

5 NX1G99 3 State NAND/OR Function Available Figure 9. No. of s AND/NAND Function OR/NOR Function A B C D 3 State NAND 3 State NAND Figure 10. No. of s AND/NAND Function OR/NOR Function A B C D 3 State NAND 3 State NAND Figure 11. No. of s AND/NAND Function OR/NOR Function A B C D 3 State NAND 3 State NAND Figure 1. No. of s AND/NAND Function OR/NOR Function A B C D 5

6 NX1G99 3 State XOR/XNOR Function Available Figure 13. Function A B C D 3 State XOR or or or or Figure 14. Function A B C D 3 State XOR Figure 15. Function A B C D 3 State XOR Figure 16. Function A B C D 3 State XNOR 3 State XNOR 6

7 NX1G99 MAXIMUM RATINGS Symbol Parameter alue Unit CC DC Supply oltage 0.5 to +7. N DC oltage 0.5 to +7. OUT DC oltage Active Mode (igh or ow State) Tristate Mode ( at i Z) Power Down Mode ( CC = ) 0.5 to CC to to +7.0 I IK DC Diode Current N < GND 50 ma I OK DC Diode Current OUT < GND 50 ma I O DC Source/Sink Current ±50 ma I CC DC Supply Current Per Supply Pin ±100 ma I GND DC Ground Current per Ground Pin ±100 ma T STG Storage Temperature Range 65 to +150 C T ead Temperature, 1 mm from Case for 10 Seconds 60 C T J Junction Temperature Under Bias 150 C MS Moisture Sensitivity evel 1 F R Flammability Rating Oxygen Index: 8 to 34 U in ESD ESD Withstand oltage uman Body Model (Note ) Machine Model (Note 3) Charged Device Model (Note 4) > 000 > 00 N/A I ATCUP atchup Performance Above CC and Below GND at 15 C (Note 5) ±500 ma Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm by 1 inch, ounce copper trace no air flow.. Tested to EIA / JESD A114 A. 3. Tested to EIA / JESD A115 A. 4. Tested to JESD C101 A. 5. Tested to EIA / JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit CC Positive DC Supply oltage 1.65 N Digital oltage 0 OUT oltage Active Mode (igh or ow State) Tristate Mode ( at i Z) Power Down Mode ( CC = ) T A Operating Free Air Temperature C t / Transition Rise or Fall Rate CC =.5 0. CC = CC = CC No imit No imit No imit Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. ns/ 7

8 NX1G99 DC EECTRICA CARACTERISTICS Symbol Parameter Conditions CC () T+ Positive Threshold oltage T A = 5 C T A +85 C T A = 55 C to +15 C Min Max Min Max Min Max Unit T Negative Threshold oltage ysteresis oltage O Minimum igh evel oltage N = T MIN or T+MAX I O = 50 A I O = 100 A CC 0.1 CC 0.1 CC 0.1 CC 0.1 CC 0.1 CC 0.1 N = T MIN or T+MAX I O = 4 ma I O = 8 ma I O = 1 ma I O = 16 ma I O = 4 ma I O = 3 ma O Maximum ow evel oltage N = T MIN or T+MAX I O = 50 A I O = 100 A N = T MIN or T+MAX I O = 4 ma I O = 8 ma I O = 1 ma I O = 16 ma I O = 4 ma I O = 3 ma I IN eakage Current 0 N A I off Power off eakage Current N or O = A I OZ Tri state eakage Current O = CC or GND A I CC Quiescent Supply Current N = CC or GND, I O = A I CC Increase in I CC Per One input at ( CC 0.6), other inputs at CC or GND A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 8

9 NX1G99 AC EECTRICA CARACTERISTICS ( t r = t f = 3.0 ns) Symbol Parameter CC () Test Condition t P, t P t EN t DIS t P, t P t EN t DIS C IN Propagation Delay, Any to (See Test Circuit) Enable Time, to Disable Time, to Propagation Delay, Any to (See Test Circuit) Enable Time, to Disable Time, to Capacitance Refer to switch positions and loading conditions in Figure 17 to 1. Refer to switch positions and loading conditions in Figure 17 to 1. Refer to switch positions and loading conditions in Figure 17 to 1. Refer to switch Positions and loading conditions in Figure to 6. Refer to switch Positions and loading conditions in Figure to 6. Refer to switch Positions and loading conditions in Figure to 6. T A = 5 C T A +85 C T A = 55 C to +15 C Min Typ Max Min Max Min Max pf Unit ns ns ns ns ns ns C O Capacitance pf C PD Power Dissipation Capacitance (Note 6) 3.3 f = 10 Mz pf 6. C PD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without load. Average operating current can be obtained by the equation I CC(OPR) = C PD CC f in + I CC. C PD is used to determine the no load dynamic power consumption: P D = C PD CC f in + I CC CC. 9

10 NX1G99 TEST CIRCUIT AND OTAGE WAEFORMS From Under Test R S1 OAD Open Test S1 GND t P /t P Open C * R t PZ /t PZ t PZ /t PZ OAD GND *C includes probes and jig capacitance. Figure 17. oad Circuit s CC t r /t f OAD C R CC ns CC / x CC 15 pf 1 M CC ns CC / x CC 15 pf 1 M ns pf 1 M CC.5 ns CC / x CC 15 pf 1 M 0.3 t W Timing Data t su t h Figure 18. oltage Waveforms Pulse Duration t P t P t P t P Figure 0. oltage Waveforms Propagation Delay Times Inverting and Noninverting s O O O O Figure 19. oltage Waveforms Setup and old Times Control Waveform 1 S1 at OAD (Note 7) t PZ Waveform S1 at GND (Note 7) OAD / Figure 1. oltage Waveforms Enable and Disable Times ow and igh evel Enabling O + O t PZ O O 7. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control. Waveform is for an output with internal conditions such that the output is high, except when disabled by the output control 8. All input pulses are supplied by generators having the following characteristics: PRR 10 Mz, Z O = The outputs are measured one at a time, with one transition per measurement. 10. All parameters are waveforms are not applicable to all devices. 10

11 NX1G99 From Under Test R S1 OAD Open Test S1 GND t P /t P Open C * R t PZ /t PZ t PZ /t PZ OAD GND *C includes probes and jig capacitance. Figure. oad Circuit s CC t r /t f OAD C R CC ns CC / x CC 30 pf 1 k CC ns CC / x CC 30 pf ns pf CC.5 ns CC / x CC 50 pf t W Timing Data t su t h Figure 3. oltage Waveforms Pulse Duration t P t P t P t P Figure 5. oltage Waveforms Propagation Delay Times Inverting and Noninverting s O O O O Figure 4. oltage Waveforms Setup and old Times Control Waveform 1 S1 at OAD (Note 11) t PZ Waveform S1 at GND (Note 11) OAD / Figure 6. oltage Waveforms Enable and Disable Times ow and igh evel Enabling O + O t PZ O O 11. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control. Waveform is for an output with internal conditions such that the output is high, except when disabled by the output control 1.All input pulses are supplied by generators having the following characteristics: PRR 10 Mz, Z O = The outputs are measured one at a time, with one transition per measurement. 14. All parameters are waveforms are not applicable to all devices. 11

12 NX1G99 ORDERING INFORMATION Device Package Shipping NX1G99DMUTCG UDFN8, 1.95 x 1.0, 0.5P (Pb Free) 3000 / Tape & Reel NX1G99DMUTWG UDFN8, 1.95 x 1.0, 0.5P (Pb Free) 3000 / Tape & Reel NX1G99EMUTCG (In Development) UDFN8, 1.6 x 1.0, 0.4P (Pb Free) 3000 / Tape & Reel NX1G99FMUTCG (In Development) UDFN8, 1.45 x 1.0, 0.35P (Pb Free) 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1

13 NX1G99 PACKAGE DIMENSIONS UDFN8 1.6x1.0, 0.4P CASE 517B ISSUE O PIN ONE REFERENCE X X 0.10 C 0.10 C 0.05 C 0.05 C 1 D ÉÉÉ ÉÉÉ TOP IEW SIDE IEW e/ e 1 4 A B E A3 A A1 7X C SEATING PANE NOTES: 1. DIMENSIONING AND TRANCING PER ASME 14.5M, CONTROING DIMENSION: MIIMETERS. 3. DIMENSION b APPIES TO PATED TERMINA AND IS MEASURED BETWEEN 0.15 AND 0.0 MM FROM TERMINA TIP. 4. PACKAGE DIMENSIONS EXCUSIE OF BURRS AND MOD FAS. MIIMETERS DIM MIN MAX A A A REF b D 1.60 BSC E 1.00 BSC e 0.40 BSC RECOMMENDED SODERING FOOTPRINT* 7X 8X BOTTOM IEW 8X b 0.10 M C A B 0.05 M C NOTE PKG OUTINE 0.40 PITC DIMENSIONS: MIIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SODERRM/D. 13

14 NX1G99 PACKAGE DIMENSIONS UDFN8 1.45x1.0, 0.35P CASE 517BZ ISSUE O PIN ONE REFERENCE X X 0.10 C 0.10 C 0.05 C 0.05 C 1 e/ ÉÉ ÉÉ D TOP IEW SIDE IEW 1 4 e A B E A3 A A1 7X C SEATING PANE NOTES: 1. DIMENSIONING AND TRANCING PER ASME 14.5M, CONTROING DIMENSION: MIIMETERS. 3. DIMENSION b APPIES TO PATED TERMINA AND IS MEASURED BETWEEN 0.15 AND 0.0 MM FROM TERMINA TIP. 4. PACKAGE DIMENSIONS EXCUSIE OF BURRS AND MOD FAS. MIIMETERS DIM MIN MAX A A A REF b D 1.45 BSC E 1.00 BSC e 0.35 BSC RECOMMENDED SODERING FOOTPRINT* 7X 8X BOTTOM IEW 8X b 0.10 M C A B 0.05 M C NOTE PKG OUTINE 0.35 PITC DIMENSIONS: MIIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SODERRM/D. 14

15 NX1G99 PACKAGE DIMENSIONS UDFN8 1.95x1.0, 0.5P CASE 517CA ISSUE O PIN ONE REFERENCE X X 0.10 C ÉÉÉ ÉÉÉ 0.10 C 0.05 C 0.05 C 1 D TOP IEW SIDE IEW e/ e 1 4 A B E A3 A A1 7X C SEATING PANE NOTES: 1. DIMENSIONING AND TRANCING PER ASME 14.5M, CONTROING DIMENSION: MIIMETERS. 3. DIMENSION b APPIES TO PATED TERMINA AND IS MEASURED BETWEEN 0.15 AND 0.0 MM FROM TERMINA TIP. 4. PACKAGE DIMENSIONS EXCUSIE OF BURRS AND MOD FAS. MIIMETERS DIM MIN MAX A A A REF b D 1.95 BSC E 1.00 BSC e 0.50 BSC RECOMMENDED SODERING FOOTPRINT* 7X X BOTTOM IEW 5 8X b 0.10 M C A B 0.05 M C NOTE PKG OUTINE 0.50 PITC DIMENSIONS: MIIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SODERRM/D. MiniGate is a trademark of Semiconductor Components Industries, C (SCIC). ON Semiconductor and are trademarks of Semiconductor Components Industries, C dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBICATION ORDERING INFORMATION ITERATURE FUFIMENT: iterature Distribution Center for ON Semiconductor 1951 E. 3nd Pkwy, Aurora, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order iterature: For additional information, please contact your local Sales Representative NX1G99/D