High Brightness EUV Light Source for Actinic Inspection & Microscopy
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1 High Brightness EUV Light Source for Actinic Inspection & Microscopy P. Choi, V.S. Zakharov, S.V. Zakharov, R. Aliaga-Rossel, A. Bakouboula, O. Benali, P. Bove, M. Cau, G. Duffy, O. Iwase, B. Lebert, O. Sarroukh, C. Zaepffel Nano-UV EPPRA
2 EUV for EUV Lithography Diffraction restricts the resolution r k1 NA 13.5nm (h =92eV) 6.Xnm? / 2% NOW EUV for HVM beyond 16 nm For HVM: > 2 W of in-band IF within < 3mm 2 sr etendue For mask inspections ABI AIMS APMI : 3 >1 W/mm 2 sr within etendue of mm 2 sr COPIRIGHT, NANO-UV LPP & DPP can produce Sn, Xe plasma radiating at EUV range EUV sources are still the main issue of EUVL deployment 2
3 i-socomo - GEN II cell Cathode chamber + shielding shell + gas distribution + air cooling Anode chamber + water cooled structure Plasma expansion chamber - water cooled collimator structure COPIRIGHT, NANO-UV Physical Dimensions: Source : 15 mm diameter, 52 mm length, 7 kg Instrument rack : 13 x 6 x 8 mm, 2 kg Utility requirements: Electrical : 2-24V, 2Ø, 5/6 Hz, 16A Cooling : Water cooled (2 litres per minute, 15 C - 25 C inlet) He, N 2 and Xe : 3 bar inlet 3
4 MPP Discharge Experiment - plasma discharge emission from a channel produced by hollow cathode electrons Intensity (arb. units) COPIRIGHT, NANO-UV optical streak photograph pulse charged local energy storage sub-mm diameter capillary t hollow cathode e-beam for onaxis discharge initiation rapid current heating - 1st EUVL Symposium, Dallas 22 - ultra-bright high energy density radiator Wavelength (nm) o.1 o.2 o.3 o pressure (mbar) 4
5 Photodiode signal (mv) Photodiode signal (mv) Nano-UV: EUV Source micro - pulsed plasma MPP 21kV with SXUV2 A Mo/Si (35/5 nm) filtered diode from IRD in 3 nm EUV band (12.4 nm nm) Al coated (11 nm) on Si 3 N 4 (25 nm) to reject OoB 2µm pinhole aperture in front of the diode typical etendue < 1-3 mm 2.sr Discharge in He/N 2 /Xe admixture, total Flow 3.2 sccm/min Cell capacity 1.7nF The low charge energy resolves heat-loading issues Profil@74cm (21kV1mtorr ) Gauss fit of A74cm_Maxpulse Distance (mm) Scanned signal 74cm COPIRIGHT, NANO-UV Data: A74cm_Maxpulse Model: Gauss Chi^2/DoF = R^2 = y ± xc ± w ± A ± Maxpulse B Distance 98cm Data: Data3_Maxpulse Model: Gauss Chi^2/DoF = R^2 = y ± xc ±.2948 w ± A ± Distance source to diode (cm) kHz Ph/cm 2 /s 8.2e17 1.8e17 Beam HWHM (mm) Radiation solid angle = 2* (1-cos )= 6e-4 sr Radiation half angle divergence (deg).8 Estimated in-band brightness is of 31 W/mm 2 sr per khz 5
6 Source Characteristics - measurement schematics Set up Cell Aperture : 2 mm + grid Filtered Photodiode Pinhole : 5 µm CCD Camera 17 cm 49 cm cm 62 cm 68 cm 8 cm 14 cm Aperture 8 mm Aperture 2 mm Pinhole scan time averaged source diameter; size & stability angular emission properties source etendue COPIRIGHT, NANO-UV EUV filter Phystex SPF Photodiode scan filtered (Mo35nm/Si5nm) SXUV_2A diode with 3 nm band ( nm) with Al coated Si 3 N 4 to reject Oob CCD with Spectral Purity Filter (SPF) or Al coated Si 3 N 4 filter scan diode to get radiation profile and power delivered fold with pinhole scan source image data to get radiant brightness 6
7 Photodiode signal (V) Output 3 nm bandwidth (W) Irrandiance E17 ph/cm2/s Photodiode signal (mv) Source Characteristics I - irradiance & power vs stored energy Discharge Voltage Profil@74cm (22.6kV1mtorr ) Gauss fit of A74cm_Maxpulse Data: A74cm_Maxpulse Model: Gauss Chi^2/DoF = R^2 = At 74 cm, 22.6 kv, 45mJ, 1 khz, (3nm EUV band): EUV diode y ± xc ±.1214 w 9.25 ± A ± Peak irradiance 1.19 E18 ph/cm 2 /s Sigma: 4.1 mm Distance (mm) Power: 18.5W (3nm band) kV 23.2kV 22.7kV 21.5V 2.8kV 19.5kV Power W Linear Fit of Data1_W Irradiance Linear Fit of Data1_phcm2s Time (ns) Photodiode pulse over 16 shots COPIRIGHT, NANO-UV Stored energy (mj) 3nm EUV band power versus stored energy Stored energy (mj) Irradiance versus stored energy Output power and irradiance increase with increasing stored energy 7
8 Source Characteristics higher resolution source projection Pinhole scan EUV SPF filter, F4 mesh grid over SEA (2mm) - far field image showing collective features The measured source size is less than 18um Pseudo colour COPIRIGHT, NANO-UV pinhole-scan image profile - 5 m pinhole,.5 mm scan step, 5s exposure, 2x2 bin on CCD, 1 khz EUV pulses, image sensor to source 14 cm, untreated raw data 8
9 COPIRIGHT, NANO-UV Source Characteristics II - wavefront measurement HASO X-EUV Shack Hartmann wavefront sensor - (from Imagine Optic) EUV source HASO 189 mm EUV beam diameter d= 9.75 mm at 189 mm from source Beam divergence half angle =.19 Acquired image 6s exposure, source at 1 khz Derived wavefront 166 nm RMS (12 ) & 76nm PV (58 ) Solid angle =.345 msr Etendue E = mm 2 sr * With support of G. Dovillaire, E. Lavergne from Imagine Optic and P. Mercere, M.Idir from SOLEIL Synchrotron 9
10 Photodiode signal (mv) Photodiode signal (mv) Photodiode signal (mv) Source Structure Tuning - different cathode materials Measured Parameters SXUV2 A Mo/Si (35/5 nm) filtered diode from IRD, 3 nm EUV band (12.4 nm nm), Al coated (11 nm) on Si 3 N 4 (25 nm) to reject OoB, typical etendue 1.7 E-2 mm 2.sr, discharge in He/N 2 /Xe admixture with a total Flow 3.2 sccm/min, Cell capacity 1.7nF, Stored energy 44mJ Al -alloy cathode Profil@74cm (22.3kV1mtorr ) Gauss fit of A74cm_Maxpulse Data: A74cm_Maxpulse Model: Gauss Chi^2/DoF = R^2 = y ± xc ±.1429 w ± A ± SS cathode Profil@74cm (22.3kV1mtorr ) Gauss fit of A74cm_Maxpulse Data: A74cm_Maxpulse Model: Gauss Chi^2/DoF = R^2 = y ± xc ± w ± A ± Sn-alloy cathode Profil@74cm (22.3kV1mtorr ) Gauss fit of A74cm_Maxpulse Data: A74cm_Maxpulse Model: Gauss Chi^2/DoF = R^2 =.9662 y ± xc ±.157 w ± A ± Distance (mm) irradiance at 74cm, 1mtorr and 22.3kV- 7.4e17 ph/cm 2 /s at 1 khz (3nm EUV band) Power= 13.7W Sigma= 4.92mm COPIRIGHT, NANO-UV Distance (mm) irradiance at 74cm, 1mtorr and 22.3kV- 6.9e17 ph/cm 2 /s at 1 khz (3nm EUV band) Power= 16.3W Sigma= 5.6mm Distance (mm) irradiance at 74cm, 1mtorr and 22.3kV- 1.1e18 ph/cm 2 /s at 1 khz (3nm EUV band) Power= 18W Sigma= 4.5mm Sn alloy cathode improves radiation output 1
11 Irrandiance E17 ph/cm2/s Irrandiance E17 ph/cm2/s Photodiode signal (V) Photodiode signal (V) Tin addition to the gas admixture - different Tin alloy cathode Voltage scan using Sn-alloy cathode 1 Voltage scan using Sn-alloy cathode 2 higher Sn content Time (ns) 23.5kV 23.2kV 22.7kV 21.5V 2.8kV 19.5kV Irradiance Linear Fit of Data1_phcm2s kV 23.3kV 23kV 22kV 21.6kV 2.1kV Time (ns) Irradiance Linear Fit of Data1_phcm2s COPIRIGHT, NANO-UV Stored energy (mj) Stored energy (mj) 5 55 At high energy, radiation output > 1.25x using Sn alloy 2 compared to Sn alloy 1 Need to assess life time issues 11
12 Irradiance at the signal peak (x 1e17 ph/cm2/s) Irrandiance E17 ph/cm2/s Photodiode signal (V) Photodiode signal (V) Progress in experiment Results presented at EUVL october irradiance vs stored energy Current Results kV 2.5kV 21.3kV 22kV 22.6kV 23.1kV kV 23.2kV 22.7kV 21.5V 2.8kV 19.5kV Time (ns) Stored energy (J) Time (ns) Irradiance Linear Fit of Data1_phcm2s Stored energy (mj) At same operating voltage by optimisations made on the fuel gas mix and flow rate 2 fold increase in the irradiance 3 fold increase on power COPIRIGHT, NANO-UV Scaling to higher power demonstrated with Sn admixture 12
13 In-band EUV energy per shot, uj In-band EUV energy per shot, uj Gen II EUV Source - characteristics & optimization from Z* modelling J/shot 496mJ stored energy Optimization by gas mixture pressure Pressure, a.u. 1 Resistive regime COPIRIGHT, NANO-UV EUV source scan by stored electrical energy for more details, at theoretical talk (S44): S.V.Zakharov et al Energy scan calculated (in 2% band) Stored energy, mj 13
14 CYCLOPS - AIMS Aerial Image Microscope System (AIMS) tool source Design Specifications - high brightness with small etendue 1 W/mm 2.sr in-band 2% EUV radiant brightness 5mW within etendue mm 2.sr IF source area < 9 mm 2 optimized for aerial image measurements i-socomo unit, 5 khz working energy stability < 1% no debris / membrane filter Current Status system characterization stability optimization life time components testing COPIRIGHT, NANO-UV 14
15 EUV Radiance, MW/mm2 sr Multiplexing - a solution for high power & brightness Small size sources, with low enough etendue E 1 =A s << 1 mm 2 sr can be multiplexed. The EUV power of multiplexed N sources is P EUV E N The EUV source power meeting the etendue requirements increases as N 1/2 This allows efficient re-packing of radiators from 1 into N separate smaller volumes without losses in EUV power f tin Z* Scan Mass Depth (rho*r), g/cm2 R=.4mm R=.8mm R=.16mm R=.31mm R=.625mm R=1.25mm R=2.5mm R=5mm Spatial-temporal multiplexing: The average brightness of a source and output power can be increased by means of spatial-temporal multiplexing with active optics system, totallizing sequentially the EUV outputs from multiple sources in the same beam direction without extension of the etendue or collection solid angle COPIRIGHT, NANO-UV - compact physical size of SoCoMo is required 15
16 HYDRA 4 -ABI - spatial multiplexing for blank inspection Actinic Blank Inspection (ABI) tool source Design Specifications 6 W/mm 2.sr in-band 2% EUV brightness.6 W at the IF effective etendue 1-2 mm 2.sr source area - 31 mm 2 / TBD optimized for mask blank inspection 4x i-socomo units working at 3 khz each no debris / membrane filter close packed pupil fill Current Status 4 units integration & characterization single unit optimization ML mirrors evaluation & modelling COPIRIGHT, NANO-UV Z= 7 mm 25 mm Z= Cross Over Z= 5 mm All 4 sources aligned to a point without use of any solid optical collector 16
17 COPIRIGHT, NANO-UV HYDRA 4 -ABI - spatial multiplexing 4 cells 1 22 KV Cells capacity : 1.2nF each Operating Pressure ; 3mTorr Profile scans (3nm EUV 7 cm perpendicular to the optical beam axis Summation of 4 single Beams 4 Beams simultaneous ph/pulse 1.4mJ/pulse KHz 17
18 y(sig) y(sig).9988 HYDRA 4 -ABI - 4-beams flatness optimization Overlaping of 4 suitably appertured Gaussian beam at a given flatness of.2% Frame 1 9 Aug 21 Z-ray - code output, cell values Frame 1 9 Aug 21 Z-ray - code output, cell values 1 a= 1.18E+ s= E+ 1 a= 1.18E+ s= E % x(sig) f An efficiency with flatness of.2% is of 22% x(sig).998.2% f COPIRIGHT, NANO-UV 18
19 HYDRA-APMI - unique temporal & spatial multiplexing Actinic Patterned Mask Inspection (APMI) tool source Design Specifications 6-12 W/mm 2.sr in-band EUV brightness W at the IF etendue 1-2 mm 2.sr IF source area - 2 mm 2 optimized for patterned mask inspection 4-8x i-socomo units working at 3 khz each khz temporally multiplexed no debris / membrane filter Gaussian output spot Current Status optics design & modelling single unit optimization mechanical design COPIRIGHT, NANO-UV 19
20 Multiplexing - Spatial & Temporal Temporal Multiplexing Technically NOT challenging - needs development COPIRIGHT, NANO-UV 2
21 COPIRIGHT, NANO-UV Acknowledgements Collaborators Pontificia Universidad Catolica de Chile NRC Kurchatov Institute, Moscow, Russia Keldysh Institute of Applied Mathematics RAS, Moscow, Russia University College King s College London Sponsors - EU & French Government FP7 IAPP OSEO-ANVAR Investor - RAKIA 21
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