MICRO AND NANOPROCESSING TECHNOLOGIES
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1 LECTURE 5 MICRO AND NANOPROCESSING TECHNOLOGIES Introduction Ion lithography X-ray lithography Soft lithography E-beam lithography Concepts and processes Lithography systems Masks and resists Chapt.9. Non-optical lithographies 1/55
2 INTRODUCTION Moore s law SIA Roadmap What does it mean? Chapt.9. Non-optical lithographies 2/55
3 From 1960 to 1970, complexity is the number of components as initially described by Moore. After that, it was often cited as the number of bits in a DRAM or the number of transistors in a microprocessor. Chapt.9. Non-optical lithographies 3/55
4 Major challenges facing lithography CoO and RoI include a rapid downward spiral in resolution requirements. At the same time, the number of critical layers become larger. Chapt.9. Non-optical lithographies 4/55
5 Chapt.9. Non-optical lithographies 5/55
6 This trend presents a variety of challenges: resolution uniformity (along features and across fields & wafers) repeatability (process latitude) pattern transfer capabilities (selective, anisotropic etching) pattern placement (overlay registration) throughput HOW and by WHAT MEANS??? Chapt.9. Non-optical lithographies 6/55
7 Chapt.9. Non-optical lithographies 7/55
8 Chapt.9. Non-optical lithographies 8/55
9 ION LITHOGRAPHY Ion - solid interactions Lithography systems Resists Chapt.9. Non-optical lithographies 9/55
10 Ion - solid interactions. Chapt.9. Non-optical lithographies 10/55
11 Ion energy loss with ion energy ( A atomic weight of ion ). de dz = de dz n + de dz e + de dz ch Chapt.9. Non-optical lithographies 11/55
12 Schematic for ion target interactions. Chapt.9. Non-optical lithographies 12/55
13 Energy spectrum of ions scattered from a solid target. Chapt.9. Non-optical lithographies 13/55
14 ION LITHOGRAPHY Ion - solid interactions Lithography systems Resists Chapt.9. Non-optical lithographies 14/55
15 Shadow print system Source: Collimated He+ beam keV Mask: - Si (110) membrane 3-6μm thick - 100nm Au Masking mechanism is twofold: dechanneling ions in thin metal layer and energy loss difference for random and channeled ions. Chapt.9. Non-optical lithographies 15/55
16 Scanning system Source: Liquid metal Ga + beam 57keV Optics: -Delivers 1nA 10nm -Deflects scan speed 5x10 4 μm/s FIB - focused ion beam system for etching is very similar! Chapt.9. Non-optical lithographies 16/55
17 ION LITHOGRAPHY Ion - solid interactions Lithography systems Resists Chapt.9. Non-optical lithographies 17/55
18 Radiation damage patterning of SiO 2 with H, D, and He ions. Chapt.9. Non-optical lithographies 18/55
19 Etch rate enhancement factor as a function of the ion dose. Chapt.9. Non-optical lithographies 19/55
20 Implantation assisted oxidation enhancement. Chapt.9. Non-optical lithographies 20/55
21 Pattern generation with metallic resist. Chapt.9. Non-optical lithographies 21/55
22 M f = 1+ KQ G M [ ( z) S ( z) + G ( z) S ( z) ] e e n n n PMMA as ion beam resist: - M f average molecular weight after exposure, - M n average molecular weight before exposure, - G e (z) and G n (z) radiation yields for chain scission caused by electronic and nuclear collisions, - Q incident charge per unit area, - K resist factor, f(m n,ρ) Chapt.9. Non-optical lithographies 22/55
23 R = R 0 + βm α f ( z) PMMA as ion beam resist: - R solubility rate, - R 0, β, and α empirically determined constants d = RT ( 1) T d R 0 0 dz + β ( ) α M f z - for thin PMMA resist the thickness removed (d) after time T ( 1 ) - for thick PMMA resist the thickness removed after time T ( 2 ) then R 0 =8.4nm/min, β=3.9*10 7 nm/min, α=1.41 and G e =1.7 and G n =0.9 ( radiation yield for e-beam exposure is G=1.9 for PMMA resist ). Chapt.9. Non-optical lithographies 23/55 = ( 2)
24 a) 20kV electrons b) 200kV He + c) 60kV He + d) 250kV Ar + e) 150kV Ar + solid - electronic loss dashed nuclear loss Energy deposition in PMMA in function of penetration depth. Chapt.9. Non-optical lithographies 24/55
25 X-RAY LITHOGRAPHY X-ray photon - solid interactions Lithography sources and systems Masks and resists Chapt.9. Non-optical lithographies 25/55
26 Two dominant interaction processes for high energy photons with matter: photoelectric effect and Compton scatternig. For x-ray lithography 1-10keV sources are used, where photoelectron effect dominates. Chapt.9. Non-optical lithographies 26/55
27 Incident photon energy will ultimately be dissipated by secondary electrons generated by impact ionization. In this respect x-ray lithography and e-beam lithography use similar exposure mechanisms in the resist, once the initial photoelectron event occurs. An important difference between the two processes is that the secondary electrons generated in the resist during x-ray exposure are usually about an order of magnitude lower in the energy than those from e-beam exposure. Thus the distance over which the energy is spread in x-ray lithography is much smaller. Chapt.9. Non-optical lithographies 27/55
28 SU-8 pillars with 8μm diameter with height 480μm ( 1:60 ratio! ) fabricated by x-ray lithography. Roughness of the pillar walls better than 200nm. Walls are almost vertical. Pillar foot wider than top for about 500nm. Chapt.9. Non-optical lithographies 28/55
29 X-RAY LITHOGRAPHY X-ray photon - solid interactions Lithography sources and systems Masks and resists Chapt.9. Non-optical lithographies 29/55
30 Simple rotating electron impact x-ray source uses electron beams focused on a rotating tungsten anode. Chapt.9. Non-optical lithographies 30/55
31 Laser plasma-heated x-ray source uses a focused highintensity pulsed laser to ablate a metal film. Superheated metal atoms radiate x-rays. Chapt.9. Non-optical lithographies 31/55
32 Basic schematic of an electron storage ring for XRL. Synchrotron radiation is emitted by high energy relativistic electrons at each bending magnet location. Bright, highly collimated but expensive! Several exposure stations can be supplied by one ring. Chapt.9. Non-optical lithographies 32/55
33 Simple proximity x-ray lithography aligner ( similar to optical proximity system ). Chapt.9. Non-optical lithographies 33/55
34 X-ray lithography aligner developed at Bell Labs. Chapt.9. Non-optical lithographies 34/55
35 X-ray lithography aligner developed at Bell Labs. Specs. Chapt.9. Non-optical lithographies 35/55
36 Arrangement for exposing resists, illustrating penumbral ( 1 ) and geometrical ( 2 ) distortions in x-ray proximity printing. Δ = dz = s ds d D w D () 1 ( 2) Chapt.9. Non-optical lithographies 36/55
37 reflection constructive interference redirection Possible choices for x-ray optics systems: (A) glancing angle metal mirror (highly polished metal plate), (B) Kumakhov lenses (small glass caplillary tubes), (C) multilayer mirrors (Mo/Si scatterer/spacer layers). Chapt.9. Non-optical lithographies 37/55
38 An x-ray projection lithography system using x-ray mirrors and reflective mask ( EUV 13.5nm ). Chapt.9. Non-optical lithographies 38/55
39 Cymer s proposed EUV source for high-volume manufacturing is a laser-produced plasma source that uses excimer as the drive laser technology and lithium as the target material. Chapt.9. Non-optical lithographies 39/55
40 EUV source specification. Chapt.9. Non-optical lithographies 40/55
41 X-RAY LITHOGRAPHY X-ray photon - solid interactions Lithography sources and systems Masks and resists Chapt.9. Non-optical lithographies 41/55
42 X-ray mask blank fabrication process produces a membrane stretched across a mechanical support ring ( pyrex ). Chapt.9. Non-optical lithographies 42/55
43 Additive process for x-ray mask fabrication. Chapt.9. Non-optical lithographies 43/55
44 Subtractive process for x-ray mask fabrication. Chapt.9. Non-optical lithographies 44/55
45 Though still optical in nature, an EUV mask is reflective rather than transmissive. Patterns are achieved by creating areas where the light will absorb rather than reflect off the mask. Chapt.9. Non-optical lithographies 45/55
46 Image generation in the resist is very different in x-ray and e-beam lithography than in traditional photolithography. In optical process the energy of the absorbing photon is well defined. For i-line source ( 365nm ) the photon energy is 3.4eV. In contrast, high concentration of secondary electrons with wide range of energies is produced upon x-ray or e-beam exposure. For those cases rather than designing the resist so that a single chemical reaction is driven by exposure, the resist must be designed that the desired reactions occur preferentially, with many others, sometimes contradictive, being in action at the same time. Final resist contrast is defined by dominant reaction. Chapt.9. Non-optical lithographies 46/55
47 Most important resist criteria are contrast and sensitivity for the exposure type of energy and to damage during plasma etching. Novolac AZ-1350 becomes negative under X-ray exposure. Chapt.9. Non-optical lithographies 47/55
48 Most commonly used positive high resolution resist is PMMA. Monomeric fragments are about 10nm. It has fair sensitivity and good contrast but very poorly withstands plasma etching. Monomeric representation as follows: [ CH CCH ( COO( ))] 2 3 CH 3 In PMMA both crosslinking and scissions in polymeric chains occur, but the rate of scission is much larger than that of crosslinking. Chapt.9. Non-optical lithographies 48/55
49 Negative resists have components on the polymer chain that enhance crosslinking. During exposure polymers readily crosslink at these positions reducing the solubility of the resist in developer. Negative resists generaly have good sensitivities but show lower contrast and are prone to swelling during the development cycle. Common groups used to promote crosslinking in negative resists. SAL-601 and NEB-22 are high resolution negative resists. Chapt.9. Non-optical lithographies 49/55
50 SOFT LITHOGRAPHY ( briefly ) Nano Imprint Lithography ( NIL ) Step and Flash Imprint Lithography ( S-FIL) AFM termo-contact Lithography Chapt.9. Non-optical lithographies 50/55
51 Shown here are the three nanoimprint techniques. UV-NIL (left) uses UV curing to polymerize a low-viscosity monomer; hot embossing (middle) thermally modifies a thin polymer film; and micro contact printing (right) uses a soft stamp in an additive technique. Chapt.9. Non-optical lithographies 51/55
52 Step and Flash IL ( S-FIL ) Rather than spin-coat the monomer uniformly across a wafer, the S-FIL process dispenses monomer in tiny droplets which can compensate for varying pattern density. Chapt.9. Non-optical lithographies 52/55
53 Although lithographically defined lines can typically be made smaller through etch or other shrinking techniques, pitch is the hardest to fudge. Shown on the far left are 5 nm lines printed through NIL, with a 12nm pitch. Chapt.9. Non-optical lithographies 53/55
54 A topographic image shows theresultsof amicasurface scanned with a heated AFM cantilever tip, at four different temperature levels. No deposition is observed at the two lowest temperatures. At 98 C, near OPA s ( octadecyl-phosphonic acid ) melting temperature, there is light deposition; a full monolayer is deposited well above the melting point. Scanwidth is 300nm. Chapt.9. Non-optical lithographies 54/55
55 THAT S ALL FOLKS! Chapt.9. Non-optical lithographies 55/55
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