High Voltage Medium Current Driver Arrays

Transcription

1 SG28 Series High Voltage Medium Driver Arrays Description The SG28 series integrates eight NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in many military, aerospace, and industrial applications that require severe environments. All units feature open collector outputs with greater than 5V breakdown voltages combined with 5mA current carrying capabilities. Five different input configurations provide optimized designs for interfacing with DTL, TTL, PMOS, or CMOS drive signals. These Darlington array are designed to operate from -55 C to 125 C ambient temperature in a 18- pin dual in-line ceramic (J) package and 2-pin leadless chip carrier (LCC). In addition a plastic version is available in 18 lead SOWB (DW) package with a reduced temperature range of C to 7 C. Features Eight NPN Darlington Pairs Collector s to 6mA Output Voltages from 5V to 95V Internal Clamping Diodes for Inductive loads DTL, TTL, PMOS, or CMOS Compatible inputs High Reliability Features Available To MIL-STD , Available to DSCC Standard Microcircuit Drawing (SMD) MIL-M3851/1416BVA - SG281J-JAN MIL-M3851/1417BVA - SG282J-JAN MIL-M3851/1418BVA - SG283J-JAN MIL-M3851/1419BVA - SG284J-JAN MSC-AMS Level "S" Processing Available Schematics (each Darlington pair) SG281/2811/2821 (Each Driver) +V 7.2kΩ 3kΩ SG282/2812 (Each Driver) +V SG283/2813/2823 (Each Driver) +V 7V 1kΩ 2.7kΩ 7.2kΩ 3kΩ 7.2kΩ 3kΩ SG284/2814/2824 (Each Driver) 1.5kΩ SG285/2815 +V (Each Driver) +V 1.5kΩ 7.2kΩ 3kΩ 7.2kΩ 3kΩ Figure 1 Schematics (showing each Darlington pair) November 214 Rev Microsemi Corporation- Analog Mixed Signal

2 High Voltage Medium Mode PWM Controllerent Driver Array Connection Diagrams and Ordering Information Ambient Temperature Type Package Part Number Packaging Type Connection Diagram SG28XXJ-883B SG281J-JAN 1 18 SG282J-JAN C to 125 C J 18-Pin Ceramic DIP Package SG283J-JAN SG284J-JAN SG283J-DESC SG2821J-DESC SG2823J-DESC SG2824J-DESC CERDIP SG28XXJ C to 7 C DW 18-Pin Plastic SOIC Package SG283DW SOWB DW Package: RoHS Compliant / Pbfree Transition DC: 516 Pinout same as J package DW Package: RoHS / Pb-free 1% Matte Tin Lead Finish SG28XXL-883B C to 125 C L 2-Pin Ceramic Leadless Chip Carrier SG283L-DESC SG2821L-DESC SG2823L-DESC SG2824L-DESC CLCC SG28XXL Note: 1. Contact factory for JAN and DESC product availability. 2. All parts are viewed from the top. 3. See Selection Guide for specific device types. 4. Hermetic Packages J, L use Pb37/Sn63 hot solder lead finish, contact factory for availability of RoHS versions. 2

3 Absolute Maximum Ratings1 Absolute Maximum Ratings 1 Parameter Value Units Output Voltage, VCE (SG28, 281 series) 5 V (SG282 series) 95 V Input Voltage, VIN (SG282,3,4 series) 3 V Continuous Input, IIN 25 ma Continuous Collector, IC (SG28, 282) 5 ma (SG281) 6 ma Operating Junction Temperature Plastic (DW Package) 15 C Hermetic (J, L Packages) 15 C Storage Temperature Range -65 to 15 C Lead Temperature (Soldering 1 sec.) 3 C RoHS Peak Package Solder Reflow Temperature (4 sec. max. exp.) 26 (+, -5) C Note: 1. Exceeding these ratings could cause damage to the device. All voltages are with respect to ground. s are positive into, negative out of specified terminal. Thermal Data Parameter Value Units J Package Thermal Resistance-Junction to Case, θ JC 25 C/W Thermal Resistance-Junction to Ambient, θ JA 7 C/W L Package Thermal Resistance-Junction to Case, θ JC 35 C/W Thermal Resistance-Junction to Ambient, θ JA 12 C/W DW Package Thermal Resistance-Junction to Ambient, θ JA 9 C/W Note: 1. Junction Temperature Calculation: TJ = TA + (PD x θja). 2. The above numbers for θ JC are maximums for the limiting thermal resistance of the package in a standard mounting configuration. The θ JA numbers are meant to be guidelines for the thermal performance of the device/pcboard system. All of the above assume no ambient airflow. 3

4 High Voltage Medium Mode PWM Controllerent Driver Array Recommended Operating Conditions 1 Symbol V CE Parameter Recommended Operating Conditions Units Min. Typ. Max. Output Voltage SG28, SG282 series 5 V SG281 series 95 V I C Peak Collector, I C SG28, SG282 series ma SG281 series 5 ma Operating Ambient Temperature Range: J, L Packages C DW Packages 7 C Note: 1. Range over which the device is functional. Selection Guide Device VCE Max IC Max Logic Inputs SG281 SG282 SG283 5mA General Purpose PMOS, CMOS 14V-25V PMOS 5V TTL, CMOS SG284 SG2811 SG2812 5V 6V-15V CMOS, PMOS General Purpose PMOS, CMOS 14V-25V PMOS SG2813 6mA 5V TTL, CMOS SG2814 6V-15V CMOS, PMOS SG2815 High Output TTL SG2821 SG V 5mA General Purpose PMOS, CMOS 5V TTL, CMOS SG2824 6V-15V CMOS, PMOS 4

5 Electrical Characteristics Electrical Characteristics (Unless otherwise specified, these specifications apply over the operating ambient temperatures of -55 C T A 125 C, for the J & L devices and C T A 7 C, for the DW device. Low duty cycle pulse testing techniques are used which maintains junction and case temperatures equal to the ambient temperature.) Table 1 SG281 thru SG284 Symbol I CEX V CE(SAT) I IN(ON) I IN(OFF) V IN(ON) Parameter Output Leakage (Figure 2a) Output Leakage (Figure 2b) Collector Emitter (V CE(SAT) (Figure 3) Input (Figure 4) Input (Figure 5) Input Voltage (Figure 6) Applicable Devices Temp. Test Conditions Limits Min Type Max Units All V CE = 5V 1 µa SG282 V CE = 5V, V IN = 6V 5 µa SG284 V CE = 5V, V IN = 1V 5 µa All T A = T MIN I C = 35mA, I B = 85µA V T A = T MIN I C = 2mA, I B = 55µA V T A = T MIN I C = 1mA, I B = 35µA V T A = 25 C I C = 35mA, I B = 5µA V T A = 25 C I C = 2mA, I B = 35µA V T A = 25 C I C = 1mA, I B = 25µA V T A = T MAX I C = 35mA, I B = 5µA V T A = T MAX I C = 2mA, I B = 35µA V T A = T MAX I C = 1mA, I B = 25µA V SG282 V IN = 17V µa SG283 V IN = 3.85V µa SG284 V IN = 5V µa V IN = 12V µa All T A = T MAX I C = 5µA 25 5 µa SG282 SG283 SG284 T A = T MIN V CE = 2V, I C = 3mA 18 V T A = T MAX V CE = 2V, I C = 3mA 13 V T A = T MIN V CE = 2V, I C = 2mA 3.3 V T A = T MIN V CE = 2V, I C = 25mA 3.6 V T A = T MIN V CE = 2V, I C = 3mA 3.9 V T A = T MAX V CE = 2V, I C = 2mA 2.4 V T A = T MAX V CE = 2V, I C = 25mA 2.7 V T A = T MAX V CE = 2V, I C = 3mA 3. V T A = T MIN V CE = 2V, I C = 125mA 6. V T A = T MIN V CE = 2V, I C = 2mA 8. V T A = T MIN V CE = 2V, I C = 275mA 1 V T A = T MIN V CE = 2V, I C = 35mA 12 V T A = T MAX V CE = 2V, I C = 125mA 5. V T A = T MAX V CE = 2V, I C = 2mA 6. V T A = T MAX V CE = 2V, I C = 275mA 7. V T A = T MAX V CE = 2V, I C = 35mA 8. V 5

6 High Voltage Medium Mode PWM Controllerent Driver Array Symbol Parameter Applicable Devices Temp. Test Conditions Limits Min Type Max Units h FE D-C Forward Transfer Ratio (Figure 3) SG281 T A = T MIN V CE = 2V, I C = 35mA 5 T A = 25 C V CE = 2V, I C = 35mA 1 C IN Input Capacitance 1 T A = 25 C pf TPLH Turn-On Delay T A = 25 C.5 E IN to.5 E OUT 25 1 ns TPHL Turn-Off Delay T A = 25 C.5 E IN to.5 E OUT 25 1 ns I R Clamp Diode Leakage (Figure 7) All V R = 5V 5 µa V F Clamp Diode Forward Voltage (Figure 8) I F = 35mA V Note: ¹This parameter, although guaranteed, are not tested in production. Table 2 SG2811 thru SG2815 Symbol I CEX Parameter Output Leakage (Figure 2a) Output Leakage (Figure 2b) Applicable Devices Temp. Test Conditions Limits Min Type Max Units All V CE = 5V 1 µa SG2812 V CE = 5V, V IN = 6V 5 µa SG2814 V CE = 5V, V IN = 1V 5 µa T A = T MIN I C = 5mA, I B = 11µA V T A = T MIN I C = 35mA, I B = 85µA V T A = T MIN I C = 2mA, I B = 55µA V V CE(SAT) Collector Emitter (V CE(SAT) (Figure 3) All T A = 25 C I C = 5mA, I B = 6µA V T A = 25 C I C = 35mA, I B = 5µA V T A = 25 C I C = 2mA, I B = 35µA V T A = T MAX I C = 5mA, I B = 6µA V T A = T MAX I C = 35mA, I B = 5µA V T A = T MAX I C = 2mA, I B = 35µA V I IN(ON) I IN(OFF) V IN(ON) Input (Figure 4) Input (Figure 5) Input Voltage (Figure 6) SG2812 V IN = 17V µa SG2813 V IN = 3.85V µa SG2814 V IN = 5V µa V IN = 12V µa SG2815 V IN = 3V µa All T A = T MAX I C = 5µA 25 5 µa SG2812 T A = T MIN V CE = 2V, I C = 5mA 23.5 V T A = T MAX V CE = 2V, I C = 5mA 17 V 6

7 Electrical Characteristics Symbol V IN(ON) h FE C IN Parameter Input Voltage (Figure 6) D-C Forward Transfer Ratio (Figure 3) Input Capacitance 1 Applicable Devices SG2813 SG2814 SG2815 SG2811 All Temp. Test Conditions Limits Min Type Max Units T A = T MIN V CE = 2V, I C = 25mA 3.6 V T A = T MIN V CE = 2V, I C = 3mA 3.9 V T A = T MIN V CE = 2V, I C = 5mA 6. V T A = T MAX V CE = 2V, I C = 25mA 2.7 V T A = T MAX V CE = 2V, I C = 3mA 3. V T A = T MAX V CE = 2V, I C = 5mA 3.5 V T A = T MIN V CE = 2V, I C = 275mA 1 V T A = T MIN V CE = 2V, I C = 35mA 12 V T A = T MIN V CE = 2V, I C = 5mA 17 V T A = T MAX V CE = 2V, I C = 275mA 7. V T A = T MAX V CE = 2V, I C = 35mA 8. V T A = T MAX V CE = 2V, I C = 5mA 9.5 V T A = T MIN V CE = 2V, I C = 35mA 3. V T A = T MIN V CE = 2V, I C = 5mA 3.5 V T A = T MAX V CE = 2V, I C = 35mA 2.4 V T A = T MAX V CE = 2V, I C = 5mA 2.6 V T A = T MIN V CE = 2V, I C = 5mA 45 T A = 25 C V CE = 2V, I C = 5mA 9 T A = 25 C pf TPLH Turn-On Delay T A = 25 C.5 E IN to.5 E OUT 25 1 ns TPHL Turn-Off Delay T A = 25 C.5 E IN to.5 E OUT 25 1 ns I R V F Clamp Diode Leakage (Figure 7) Clamp Diode Forward Voltage (Figure 8) Note: ¹This parameter, although guaranteed, are not tested in production. V R = 5V 5 µa I F = 35mA V I F = 5mA 2.5 V Table 3 SG2821 thru SG2824 Symbol I CEX Parameter Output Leakage (Figure 2a) Output Leakage (Figure 2b) Applicable Devices Temp. Test Conditions Limits Min Type Max Units All V CE = 95V 1 µa SG2824 V CE = 95V, V IN = 1V 5 µa 7

8 High Voltage Medium Mode PWM Controllerent Driver Array Symbol V CE(SAT) I IN(ON) I IN(OFF) V IN(ON) Parameter Collector Emitter (V CE(SAT) (Figure 3) Input (Figure 4) Input (Figure 5) Input Voltage (Figure 6) Applicable Devices All Limits Temp. Test Conditions Units Min Type Max T A = T MIN I C = 35mA, I B = 85µA V T A = T MIN I C = 2mA, I B = 55µA V T A = T MIN I C = 1mA, I B = 35µA V T A = 25 C I C = 35mA, I B = 5µA V T A = 25 C I C = 2mA, I B = 35µA V T A = 25 C I C = 1mA, I B = 25µA V T A = T MAX I C = 35mA, I B = 5µA V T A = T MAX I C = 2mA, I B = 35µA V T A = T MAX I C = 1mA, I B = 25µA V SG2823 V IN = 3.85V µa SG2824 V IN = 5V µa V IN = 12V µa All T A = T MAX I C = 5µA 25 5 µa SG2823 SG2824 T A = T MIN V CE = 2V, I C = 2mA 3.3 V T A = T MIN V CE = 2V, I C = 25mA 3.6 V T A = T MIN V CE = 2V, I C = 3mA 3.9 V T A = T MAX V CE = 2V, I C = 2mA 2.4 V T A = T MAX V CE = 2V, I C = 25mA 2.7 V T A = T MAX V CE = 2V, I C = 3mA 3. V T A = T MIN V CE = 2V, I C = 125mA 6. V T A = T MIN V CE = 2V, I C = 2mA 8. V T A = T MIN V CE = 2V, I C = 275mA 1 V T A = T MIN V CE = 2V, I C = 35mA 12 V T A = T MAX V CE = 2V, I C = 125mA 5. V T A = T MAX V CE = 2V, I C = 2mA 6. V T A = T MAX V CE = 2V, I C = 275mA 7. V T A = T MAX V CE = 2V, I C = 35mA 8. V h FE D-C Forward T A = T MIN V CE = 2V, I C = 35mA 5 SG2821 Transfer Ratio (Figure 3) T A = 25 C V CE = 2V, I C = 35mA 1 C IN Input Capacitance pf TPLH Turn-On Delay T A = 25 C.5 E IN to.5 E OUT 25 1 ns TPHL Turn-Off Delay.5 E IN to.5 E OUT 25 1 ns I R V F Clamp Diode Leakage (Figure 7) Clamp Diode Forward Voltage (Figure 8) All Note: ¹This parameter, although guaranteed, are not tested in production. V R = 95V 5 µa I F = 35mA V 8

9 Parameter Test Figures Parameter Test Figures (See figure numbers in Electrical Characteristics Tables 1 to 3) VCE VCE ICEX µa VIN ICEX µa hfe = IC IB IB V VCE IC Figure 2a I CEX Test Circuit Figure 2b I CEX Test Circuit Figure 3 h FE, V CE(sat) Test Circuit VCE µa IC ma µa Figure 4 I IN (ON) Test Circuit Figure 5 I IN (OFF) Test Circuit VR µa IR V IF V V VCE IC Figure 6 V IN(ON) Test Circuit Figure 7 I R Test Circuit Figure 8 V F Test Circuit 9

10 High Voltage Medium Mode PWM Controllerent Driver Array Characteristic Curves 6 4 Collection - (ma) Output - (ma) Saturation Voltage - (V) Input Voltage - (V) Figure 8 Output Characteristics 4 Figure 9 Output Vs. Input Voltage 2.5 Output - (ma) All Types Input - (ma) Maximum Typical Input - (µa) Figure 1 Output Vs. Input Input Voltage - (V) Figure 11 Input Characteristics - SG Maximum 2. Input - (ma) Typical Input - (ma) Maximum Typical Input Voltage - (V) Figure 12 Input Characteristics - SG Input Voltage - (V) Figure 13 Input Characteristics - SG284 1

11 Characteristic Curves - Continued Characteristic Curves - Continued 6 Peak Collector in ma at +7 C o 4 2 Recommended maximum current - SG284 2 Number of outputs Conducting simultaniously Percent Duty Cycle - (%) 3 2 Figure 14 Peak Collector Vs. Duty Cycle 11

12 High Voltage Medium Mode PWM Controllerent Driver Array Package Outline Dimensions Controlling dimensions are in inches, metric equivalents are shown for general information. Dim MILLIMETERS INCHES MIN MAX MIN MAX A D A A B c H E D E e B L e 1.27 BSC.5 BSC H L A A2 c Θ 8 8 *LC Seating Plane A1 *Lead coplanarity Note: Dimensions do not include protrusions; these shall not exceed.155mm (.6 ) on any side. Lead dimension shall not include solder coverage. Figure 15 DW Package Dimensions 12

13 Package Outline Dimensions Controlling dimensions are in inches, metric equivalents are shown for general information. Package Outline Dimensions B Seating Plane H 18 1 F G A D 1 9 K C J L M Dim MILLIMETERS INCHES MIN MAX MIN MAX A B C D F G 2.54 BSC.1 BSC H J K L M Note: Dimensions do not include protrusions; these shall not exceed.155mm (.6 ) on any side. Lead dimension shall not include solder coverage. Figure 16 J 18-Pin Ceramic Dual Inline Package Dimensions E3 D A A1 3 L2 8 E L Dim MILLIMETERS INCHES MIN MAX MIN MAX D/E E e 1.27 BSC.5 BSC B1.635 TYP.25 TYP L A h 1.16 TYP.4 TYP A A L B3.23R.8R 1 13 Note: 1. All exposed metalized area shall be gold plated 6 micro-inch minimum thickness over nickel plated unless otherwise specified in purchase order. A2 h 18 B1 e B3 Figure 17 L 2-Pin Ceramic Leadless Chip Carrier (LCC) Package Outline Dimensions 13

14 Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world s standard for time; voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,4 employees globally. Learn more at Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA USA Within the USA: +1 (8) Outside the USA: +1 (949) Sales: +1 (949) Fax: +1 (949) sales.support@microsemi.com 214 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer s responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this SG28 1.7/11.14