RQ1A070AP. V DSS -12V R DS(on) (Max.) 14mW I D -7A P D 1.5W. Pch -12V -7A Power MOSFET. Datasheet 外観図 内部回路図 特長 1) 低オン抵抗 2) ゲート保護ダイオード内蔵
|
|
- Clyde Kennedy
- 5 years ago
- Views:
Transcription
1 Pch -2V -7A Power MOSFET Datasheet V DSS -2V R DS(on) (Max.) 4mW I D -7A P D.5W 外観図 TSMT8 () (2) (3) (4) (8) (7) (6) (5) 特長 ) 低オン抵抗 2) ゲート保護ダイオード内蔵 3) 小型面実装パッケージ (TSMT8) で省スペース 4) 鉛フリー対応済み RoHS 準拠 内部回路図 () ソース (2) ソース (3) ソース (4) ゲート (5) ドレイン (6) ドレイン (7) ドレイン (8) ドレイン 静電気保護用ダイオード 2 内部ダイオード 包装仕様 包装形態 テーピング 用途リールサイズ (mm) 8 ロード SW テープ幅 (mm) 8 タイプ基本発注単位 ( 個 ) 3, テーピングコード 標印 TR SG 絶対最大定格 (T a = 25C) Parameter Symbol Value Unit ドレイン ソース間電圧 V DSS -2 V ドレイン電流 ( 直流 ) I D * ドレイン電流 ( パルス ) I D,pulse * A A ゲート ソース間電圧 V GSS ~ -8 V 許容損失 P D *3 P D *4.5 W.55 W ジャンクション温度 T j 5 C 保存温度 T stg -55 ~ +5 C / Rev.C
2 熱抵抗 Parameter Symbol 熱抵抗 ( ジャンクション 外気間 ) *3 R thja 熱抵抗 ( ジャンクション 外気間 ) *4 R thja Values Unit Min. Typ. Max C/W C/W 電気的特性 (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit ドレイン ソース降伏電圧 V (BR)DSS V GS = V, I D = -ma V ドレイン ソース降伏電圧温度係数 ΔV (BR)DSS ΔT j I D = -ma referenced to 25 C mv/c ドレイン遮断電流 I DSS V DS = -2V, V GS = V ma ゲート漏れ電流 I GSS V GS = -8V, V DS = V ma ゲートしきい値電圧 V GS (th) V DS = -6V, I D = -ma V ゲートしきい値電圧温度係数 ΔV (GS)th ΔT j I D = -ma referenced to 25 C mv/ C ドレイン ソース間オン抵抗 R DS(on), I D = -7.A - 4 V GS = -2.5V, I D = -3.5A V GS = -.8V, I D = -3.5A mw V GS = -.5V, I D = -.4A V GS = -V, I D = -7A, T j =25 C ゲート抵抗 R G f = MHz, open drain W 伝達コンダクタンス g fs V DS = V, I D = -7.A 22 - S * チャネル温度が5 Cを超えることのない放熱条件でご使用下さい *2 Pw ms, Duty cycle % *3 セラミック基板実装時 (3 3.8mm) *4 ガラエポ基板 (FR4) 実装時 (2 2.8mm) 2/ Rev.C
3 電気的特性 (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit 入力容量 C iss V GS = V 出力容量 C oss V DS = -6V pf 帰還容量 C rss f = MHz ターンオン遅延時間 t d(on) 上昇時間 t r ターンオフ遅延時間 t d(off) V DD -6V, I D = -3.5A R L =.7W ns 下降時間 t f R G = W ゲート電荷量特性 (T a = 25 C) Parameter Symbol Conditions ゲート総電荷量 Q g V DD -6V, I D = -7A ゲート ソース間電荷量 Q gs ゲート ドレイン間電荷量 Q gd V DD -6V, I D = -7A Values Min. Typ. Max Unit nc 内部ダイオード特性 ( ソース ドレイン間 )(T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit ソース電流 ( 直流 ) I S * T a = 25C A 順方向電圧 V SD V GS = V, I s = -7A V パルス 3/ Rev.C
4 電気的特性曲線 Fig. Power Dissipation Derating Curve 2 Fig.2 Maximum Safe Operating Area Power Dissipation : P D /P D max. [%] Operation in this area is limited by R DS (on) ( ) T a =25ºC Single Pulse DC Operation Mounted on a ceramic board. (3mm 3mm.8mm) P W = μs P W = ms P W = ms.. Junction Temperature : T j [ C] Drain - Source Voltage : -V DS [V] Normalized Transient Thermal Resistance : r (t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width. T a =25ºC Single Pulse top D= D=.5 D=. D=.5 D=. bottom Signle. Rth(ch-a)=83ºC/W Rth(ch-a)(t)=r(t) Rth(ch-a) Mounted on ceramic board. (3mm 3mm.8mm)... Pulse Width : P W [s] Peak Transient Power : P(W) Fig.4 Single Pulse Maximum Power dissipation T a =25ºC Single Pulse... Pulse Width : P W [s] 4/ Rev.C
5 電気的特性曲線 Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) V GS = -2.5V V GS = -.8V V GS = -.5V V GS = -.2V V GS = -.V V GS = -2.5V V GS = -.8V V GS = -.5V V GS = -.2V V GS = -.V Drain - Source Voltage : -V DS [V] Drain - Source Voltage : -V DS [V] 5/ Rev.C
6 電気的特性曲線 Drain - Source Breakdown Voltage : -V (BR)DSS [V] Fig.7 Breakdown Voltage vs. Junction Temperature 3 2 V GS =V I D = -ma pulsed Junction Temperature : T j [ C] Fig.8 Typical Transfer Characteristics.. V DS = -6V pulsed T a = 75ºC T a = -25ºC Gate - Source Voltage : -V GS [V] Gate Threshold Voltage : -V GS(th) [V] Fig.9 Gate Threshold Voltage vs. Junction Temperature V DS = -6V I D = -ma pulsed Junction Temperature : T j [ C] Transconductance : g fs [S] Fig. Transconductance vs. Drain Current. V DS = -6V pulsed T a = 75ºC T a = -25ºC... 6/ Rev.C
7 電気的特性曲線 Fig. Drain CurrentDerating Curve.2 Fig.2 Static Drain - Source On - State Resistance vs. Gate Source Voltage 5 Drain Current Dissipation : I D / I D max.(%) I D = -.4A I D = -7.A Junction Temperature : T j [ºC] Gate - Source Voltage : -V GS [V] Fig.3 Static Drain - Source On - State Resistance vs. Drain Current(I) V GS = -.5V V GS = -.8V V GS = -2.5V.. Fig.4 Static Drain - Source On - State Resistance vs. Junction Temperature I D = -7A pulsed Junction Temperature : T j [ºC] 7/ Rev.C
8 電気的特性曲線 Fig.5 Static Drain - Source On - State Resistance vs. Drain Current(II) T a = 75ºC T a = -25ºC... Fig.6 Static Drain - Source On - State Resistance vs. Drain Current(III) V GS = -2.5V T a = 75ºC T a = -25ºC.. Fig.7 Static Drain - Source On - State Resistance vs. Drain Current(IV) V GS = -.8V T a = 75ºC T a = -25ºC.. Fig.8 Static Drain - Source On - State Resistance vs. Drain Current(V) V GS = -.5V T a = 75ºC T a = -25ºC.. 8/ Rev.C
9 電気的特性曲線 Fig.9 Typical Capacitance vs. Drain - Source Voltage Fig.2 Switching Characteristics Capacitance : C [pf] f=mhz V GS =V C iss C rss C oss.. Switching Time : t [ns] V DD -6V R G =W t f t d(off) t d(on).. t r Drain - Source Voltage : -V DS [V] Fig.2 Dynamic Input Characteristics 5 Fig.22 Source Current vs. Source Drain Voltage Gate - Source Voltage : -V GS [V] V DD = -6V I D = -7A Source Current : -I S [A]. V GS =V pulsed T a =25 C T a =75 C T a =25 C T a = -25 C Total Gate Charge : Q g [nc] Source-Drain Voltage : -V SD [V] 9/ Rev.C
10 測定回路図 Fig.- スイッチング時間測定回路 Fig.-2 スイッチング波形 Fig.2- ゲート電荷量測定回路 Fig.2-2 ゲート電荷量波形 / Rev.C
11 外形寸法図 (Unit : mm) D A TSMT8 e b L E L HE x S A c e Lp Lp l2 A S e y S A l b2 Pattern of terminal position areas [Not a recommended pattern of soldering pads] DIM MILIMETERS INCHES MIN MAX MIN MAX A A b c D E e HE L L Lp Lp x y DIM MILIMETERS INCHES MIN MAX MIN MAX b e l l Dimension in mm / inches / Rev.C
12 Notice ROHM Customer Support System R2A
RQ5H020SP Pch -45V -2.0A Power MOSFET
Pch -45V -2.A Power MOSFET Datasheet Outline V DSS 45V TSMT3 R DS(on) (Max.) 9m I D 2.A P D.W () (2) (3) Features ) Low on - resistance. Inner circuit (3) 2) Built-in G-S Protection Diode. 3) Small Surface
More informationN- & P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 30 27.5m 7A annel -30 34m -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL annel
More informationP-Channel Enhancement Mode Mosfet
WPM34 WPM34 P-Channel Enhancement Mode Mosfet Features Higher Efficiency Extending Battery Life Miniature SOT3-3 Surface Mount Package Super high density cell design for extremely low RDS (ON) http://www.willsemi.com
More informationP-Channel Enhancement Mode Mosfet
WPM34 WPM34 P-Channel Enhancement Mode Mosfet Http://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT3-3 Surface Mount Package Super high density cell design for extremely
More informationN-Channel 30-V (D-S) MOSFET With Sense Terminal
SUM5N3-3LC N-Channel 3-V (D-S) MOSFET With Sense Terminal PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A).3 @ V S = V 5 a 3.7 @ V S =.5 V a FEATURES TrenchFET Power MOSFET Plus Current Sensing Diode New
More informationComplementary (N- and P-Channel) MOSFET
Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS
More informationLNTA4001NT1G S-LNTA4001NT1G. Small Signal MOSFET 20 V, 238 ma, Single, N-Channel, Gate ESD Protection LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET V, 38 ma, Single, N-Channel, Gate ESD Protection Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate Pb-Free Package is Available ESD Protected:V
More informationSIPMOS Small-Signal Transistor BSP 149
SIPMOS Small-Signal Transistor DS 200 I D 0.48 A R DS(on) 3.5 Ω N channel Depletion mode High dynamic resistance Available grouped in GS(th) Type Ordering Tape and Reel Information Pin Configuration Marking
More informationProduct Summary: BVDSS 30V RDSON (MAX.) 50mΩ 4.5A I D. Pb Free Lead Plating & Halogen Free EMB50P03J
P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS V RDSON (MAX.) ID 5mΩ.5A Pb Free Lead Plating & Halogen Free D G S ABSOLUTE MAXIMUM RATINGS (T A = 5 C Unless Otherwise
More informationP-Channel Enhancement Mode Field Effect Transistor PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
PRODUCT SUMMARY D V (BR)DSS R DS(ON) I D -4V 15mΩ -45A G 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T A = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source
More informationAgilent 4263B LCR Meter Operation Manual. Manual Change. Change 1 Add TAR in Test Signal Frequency Accuracy Test (Page 9-38) as follows.
Agilent 4263B LCR Meter Operation Manual Manual Change Agilent Part No. N/A Jun 2009 Change 1 Add TAR in Test Signal Frequency Accuracy Test (Page 9-38) as follows. Test Signal Frequency Accuracy Frequency
More informationAOP606 Complementary Enhancement Mode Field Effect Transistor
AOP66 Complementary Enhancement Mode Field Effect Transistor General Description The AOP66 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may
More information500V N-Channel MOSFET
830 / 830 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize
More informationGP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings
More informationTO-247-3L Inner Circuit Product Summary I C) R DS(on)
Silicon Carbide Power MOSFET N-CHANNEL ENHANCEMENT MODE TO-247-3L Inner Circuit Product Summary V DS I D(@25 C) R DS(on) 1200V 20A 120mΩ Features u Low On-Resistance u Low Capacitance u Avalanche Ruggedness
More informationAON4605 Complementary Enhancement Mode Field Effect Transistor
AON5 Complementary Enhancement Mode Field Effect Transistor General Description The AON5 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form
More informationSPECIFICATIONS (T J = 25 C, unless otherwise noted)
N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin
More informationAO7401 P-Channel Enhancement Mode Field Effect Transistor
Nov P-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge, and operation with gate voltages as low as.5v,
More informationAO3411 P-Channel Enhancement Mode Field Effect Transistor
January 23 AO3411 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate
More informationDual N-Channel OptiMOS MOSFET
Dual N-Channel OptiMOS MOSFET Features Dual N-channel OptiMOS MOSFET Optimized for high performance Buck converter Logic level (4.5V rated) 1% avalanche tested Qualified according to JEDEC 1) for target
More informationAO V Dual P + N-Channel MOSFET
4V Dual P + N-Channel MOSFET General Description The AO467 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters
More informationAOT404 N-Channel Enhancement Mode Field Effect Transistor
AOT44 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT44 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable
More informationAO4620 Complementary Enhancement Mode Field Effect Transistor
AO46 Complementary Enhancement Mode Field Effect Transistor General Description The AO46 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may
More informationPackage. Symbol Parameter Value Unit Test Conditions Note V GS = 15 V, T C = 25 C Fig. 19 A 7.5 V GS = 15 V, T C = 100 C.
C3M29D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 9 V 11.5 A 2 mω C3M SiC MOSFET technology High blocking voltage with low
More informationOptiMOS 3 Power-MOSFET
BSB14N8NP3 G OptiMOS 3 Power-MOSFET Features Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Low profile (
More informationN-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8
l Advanced Process Technology l Ultra Low OnResistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs
More informationOptiMOS TM Power-MOSFET
OptiMOS TM Power-MOSFET Features Optimized for high performance SMPS Integrated monolithic Schottky-like diode Very low on-resistance R DS(on) @ V GS =4.5 V 1% avalanche tested Superior thermal resistance
More informationPackage. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 15 V GS = 15 V, T C = 100 C.
C3M129D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ C R DS(on) 9 V 23 A 12 mω C3M SiC MOSFET technology High blocking voltage with low On-resistance
More informationAO4802 Dual N-Channel Enhancement Mode Field Effect Transistor
July 2 AO482 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO482 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. They offer operation
More informationA I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units
V DS -30 V V GS Max ± 20 V PD - 9759 * HEXFET Power MOSFET R DS(on) max (@V GS = -V) 65 mω ' R DS(on) max (@V GS = -4.5V) 270 mω 6 Micro3 TM (SOT-23) Application(s) System/Load Switch Features and Benefits
More informationOptiMOS TM Power-MOSFET
BSC18NE2LSI OptiMOS TM Power-MOSFET Features Optimized for high performance Buck converter Monolithic integrated Schottky like diode Very low on-resistance R DS(on) @ V GS =4.5 V 1% avalanche tested N-channel
More informationOptiMOS TM Power-MOSFET
BSC1NE2LS OptiMOS TM Power-MOSFET Features Optimized for high performance Buck converter Very low on-resistance R DS(on) @ V GS =4.5 V 1% avalanche tested Superior thermal resistance N-channel Qualified
More informationAO4607, AO4607L(Lead-Free) Complementary Enhancement Mode Field Effect Transistor
Rev : Feb 3 Rev : Jan 4 AO467, AO467L(Lead-Free) Complementary Enhancement Mode Field Effect Transistor General Description The AO467 uses advanced trench technology MOSFETs to provide excellen R DS(ON)
More informationAutomotive N- and P-Channel 100 V (D-S) 175 C MOSFET
SQJ57EP Automotive N- and P-Channel V (D-S) 75 C MOSFET PRODUCT SUMMARY N-CHANNEL P-CHANNEL V DS (V) - R DS(on) ( ) at V GS = ± V.45 46 R DS(on) ( ) at V GS = ± 4.5 V.58.265 I D (A) 5-9.5 Configuration
More informationOptiMOS TM 3 Power-Transistor
OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 15 V R DS(on),max (TO263) 1.8 mw I D 83
More informationOptiMOS 2 Power-Transistor
IPB12CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max (TO252) 12.4
More informationOptiMOS TM Power-Transistor
Type OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. % avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC ) for target applications
More informationOptiMOS TM 3 Power-Transistor
Type OptiMOS TM 3 Power-Transistor Features Optimized for dc-dc conversion N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Low on-resistance R DS(on) 15 C operating temperature BSZ12DN2NS3
More informationOptiMOS 2 Power-Transistor
IPB26CN1N G IPD25CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max
More informationIRF5851. HEXFET Power MOSFET. Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge.
PD-93998B HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G S2 G2 2 3 6 5 4 D S D2 N-Ch P-Ch DSS 20-20 R DS(on)
More informationOptiMOS TM Power-MOSFET
BSNNE2LS OptiMOS TM Power-MOSFET Features Optimized for high performance Buck converter Very low parasitic inductance Low profile (
More informationOptiMOS TM 3 Power-Transistor
IPB2N25N3 G OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 25 V R DS(on),max 2 mw I D
More informationOptiMOS (TM) 3 Power-Transistor
IPD96N8N3 G OptiMOS (TM) 3 Power-Transistor Features Ideal for high frequency switching Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 8 V
More informationOptiMOS (TM) 3 Power-Transistor
Type BSZ123N8NS3 G OptiMOS (TM) 3 Power-Transistor Package Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance Product Summary V DS 8 V
More informationA I DM. W/ C V GS Gate-to-Source Voltage ± 16. Thermal Resistance Symbol Parameter Typ. Max. Units
V DSS 40 V V GS Max ± 6 V R DS(on) max (@V GS = V) 56 mω G 3 D PD - 96309A HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) Application(s) Load/ System Switch DC Motor Drive 78 mω S 2 Micro3 TM (SOT-23)
More informationAON V N-Channel MOSFET
AON66 V NChannel MOSFET General Description The AON66 utilize advanced trench MOSFET technology in small DFN. x.6 package. This device is ideal for load switch applications. Product Summary V DS V I D
More informationOptiMOS TM Power-Transistor
Type IPD25N6N OptiMOS TM Power-Transistor Features Optimized for synchronous rectification % avalanche tested Superior thermal resistance N-channel, normal level Qualified according to JEDEC ) for target
More informationSSF7NS65UF 650V N-Channel MOSFET
Main Product Characteristics V DSS R DS(on) 650V 0.6Ω (typ.) I D 7A 1 Features and Benefits TO-220F Marking and Pin Assignment S c h e m a ti c Dia g r a m High dv/dt and avalanche capabilities 100% avalanche
More informationOptiMOS 2 + OptiMOS -P 2 Small Signal Transistor
BSZ5DCKD H OptiMOS + OptiMOS -P Small Signal Transistor Features Product Summary Complementary P + channel P Enhancement mode Super Logic level (.5V rated) Common drain Avalanche rated V DS - V R DS(on),max
More informationIXFH400N075T2 IXFT400N075T2
Advance Technical Information TrenchT2 TM HiperFET TM Power MOSFET IXFH4N75T2 IXFT4N75T2 V DSS I D25 R DS(on) = 75V = 4A 2.3mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH)
More informationProduct Summary: BVDSS RDSON (MAX.) D 60V 60mΩ 12A I D. UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free EMB60N06C
N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MX.) ID D 6V 6mΩ G UIS, Rg % Tested Pb Free Lead Plating & Halogen Free S BSOLUTE MXIMUM RTINGS (T C = 5 C Unless
More informationOptiMOS 3 M-Series Power-MOSFET
BSC12N3MS G OptiMOS 3 M-Series Power-MOSFET Features Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS 1% Avalanche tested N-channel Product Summary V DS 3 V R
More informationIXFH42N60P3. Polar3 TM HiperFET TM Power MOSFET. = 600V = 42A 185m. Preliminary Technical Information. R DS(on)
Polar3 TM HiperFET TM Power MOSFET Preliminary Technical Information V DSS I D2 R DS(on) = V = 42A 8m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 Symbol Test Conditions Maximum
More informationIRLML2030TRPbF HEXFET Power MOSFET
V DS 30 V V GS Max ± 20 V R DS(on) max (@V GS = V) R DS(on) max (@V GS = 4.5V) m: 54 m: G S PD - 97432 HEXFET Power MOSFET 2 3 D Micro3 TM (SOT-23) Application(s) Load/ System Switch Features and Benefits
More informationOptiMOS (TM) 3 Power-Transistor
BSZ67N6LS3 G OptiMOS (TM) 3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product
More informationOptiMOS 3 M-Series Power-MOSFET
BSO15N3MD G OptiMOS 3 M-Series Power-MOSFET Features Dual N-channel Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS 1% Avalanche tested Product Summary V DS
More informationA I DM W/ C V GS. Thermal Resistance Symbol Parameter Typ. Max. Units
PD - 9757 IRLML000TRPbF HEXFET Power MOSFET V DS 00 V V GS Max ± 6 V G R DS(on) max (@V GS = 0V) 220 m: 3 D R DS(on) max (@V GS = 4.5V) 235 m: S 2 Micro3 TM (SOT-23) IRLML000TRPbF Application(s) Load/
More informationAutomotive N- and P-Channel 40 V (D-S) 175 C MOSFET
SQJ54EP Automotive N- and P-Channel 4 V (D-S) 75 C MOSFET 6.5 mm mm PowerPAK SO-8L Dual 5.3 mm D D 4 G 3 S G S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization:
More informationSIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode Logic level Product Summary V DS - V R DS(on),max 8 mw I D - A Avalanche rated Pb-free lead plating; RoHS compliant PG-SOT-3 Qualified
More informationDual N-/Dual P-Channel 30-V (D-S) MOSFETs
Dual N-/Dual P-Channel 3-V (D-S) MOSFETs V (BR)DSS Min (V) r DS(on) Max ( ) V GS(th) (V) I D (A) N-Channel 3 @ V GS = 2 V.8 to 2.5.85 P-Channel 3 2 @ V GS = 2 V 2 to 4.5.6 Low On-Resistance:.8/.6 Low Threshold:.5/
More informationOptiMOS TM Power-Transistor
Type BSC14N6NS OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. 1% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC 1) for target
More informationSML-811x/812x/813x Series
SML-811x/812x/813x Series Data Sheet 特 背面実装可能タイプ 外観図 サイズ情報 3412 (15) 3.4 1.25mm (t=1.1mm) Color Type V U D W M B WB 外形寸法図 3.4 はんだ付け推奨パターン 1.2 R 1.25 1.25 φ2.4 4-R.3 レジスト +.5 1.1 -.1 Hole + 1.25.28 カソードインデックス
More informationOptiMOS 3 M-Series Power-MOSFET
BSO33N3MS G OptiMOS 3 M-Series Power-MOSFET Features Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS % Avalanche tested N-channel Product Summary V DS 3 V R
More informationBSS123. Rev K/W. R thja
Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - ambient at minimum footprint R thj - - 35 K/W Electrical Characteristics, at T j = 25
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 600 V V GS Gate-Source Voltage ±30 V
General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationOptiMOS 3 Power-MOSFET
OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Product Summary V DS 3 V R DS(on),max
More informationBSS84 P-Channel Enhancement Mode Field-Effect Transistor
BSS8 P-Channel Enhancement Mode Field-Effect Transistor Features -. A, - V, R DS(ON) = Ω at V GS = - V Voltage-Controlled P-Channel Small-Signal Switch High-Density Cell Design for Low R DS(ON) High Saturation
More informationPackage. Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Part Number Package Marking
C3M659D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 9 V 36 A 65 mω C3M SiC MOSFET technology High blocking voltage with low
More information一体型地上気象観測機器 ( ) の風計測性能評価 EVALUATION OF WIND MEASUREMENT PERFORMANCE OF COMPACT WEATHER SENSORS
第 23 回風工学シンポジウム (2014) 一体型地上気象観測機器 ( ) の風計測性能評価 EVALUATION OF WIND MEASUREMENT PERFORMANCE OF COMPACT WEATHER SENSORS 1) 2) 3) 4) 5) 吉田大紀 林 泰一 伊藤芳樹 林 夕路 小松亮介 1) 4) 4) 1) 1) 寺地雄輔 太田行俊 田村直美 橋波伸治 渡邉好弘 Daiki
More informationMaximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
SPUN6S5 Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved
More informationOptiMOS Small-Signal-Transistor
OptiMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Qualified according to AEC Q % lead-free; RoHS compliant Product Summary V DS V R DS(on),max
More informationOptiMOS 2 Small-Signal-Transistor
OptiMOS Small-Signal-Transistor Features Dual N-channel Enhancement mode Ultra Logic level (1.8V rated) Avalanche rated Qualified according to AEC Q11 1% lead-free; RoHS compliant Product Summary V DS
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationOptiMOS 3 Power-MOSFET
BSC886N3LS G OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Logic level Product
More informationOptiMOS TM Power-MOSFET
BSC16N6NS OptiMOS TM Power-MOSFET Features Optimized for synchronous rectification 1% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC 1) for target applications Pb-free
More informationOptiMOS 3 Power-Transistor
BSZ4N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS 4 V
More informationOptiMOS TM Power-MOSFET
BSB13NE2LXI OptiMOS TM Power-MOSFET Features Optimized SyncFET for high performance Buck converter Integrated monolithic Schottky like diode Low profile (
More informationOptiMOS 3 Power-Transistor
IPI2N15N3 G IPP2N15N3 G OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 15 V R DS(on),max 2 mw I D 5 A Very low on-resistance
More informationOptiMOS 2 Small-Signal-Transistor
OptiMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Product Summary V DS 3 V R DS(on),max V GS =1 V 16 mω V GS =4.5 V 8 I D 1.4 A Qualified according
More informationOptiMOS 3 Power-Transistor
BSC27N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS 4 V
More informationOptiMOS 3 Power-Transistor
OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 8 V R DS(on),max 2.8 mω I D 1 A Very low on-resistance R DS(on) 175 C operating
More informationOptiMOS 3 Power-Transistor
OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 1 V R DS(on),max 7.2 mω I D 8 A Very low on-resistance R DS(on) 175 C operating
More informationTSP10N60M / TSF10N60M
TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored
More informationOptiMOS P2 Small-Signal-Transistor
OptiMOS P Small-Signal-Transistor Features P-channel Enhancement mode Super Logic Level (.5V rated) Avalanche rated Qualified according to AEC Q % lead-free; RoHS compliant Product Summary V DS - V R DS(on),max
More informationOptiMOS 2 Power-Transistor
BSO9N3S OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS
More informationOptiMOS TM P3 Power-Transistor
BSZ86P3NS3E G OptiMOS TM P3 Power-Transistor Features single P-Channel in S3O8 Qualified according JEDEC ) for target applications 5 C operating temperature V GS =25 V, specially suited for notebook applications
More informationOptiMOS -T Power-Transistor
IPB35N2S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 2 V R DS(on),max 26.3 mw Features OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode I D 35 A PG-TO263-3-2 Tab
More informationMaximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
SPUN6S5 SPDN6S5 Cool MOS Power Transistor V DS 6 V Feature R DS(on). Ω New revolutionary high voltage technology I D. A Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective
More informationOptiMOS 2 Power-Transistor
IPI3N3LA, IPP3N3LA OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC ) for target applications N-channel - Logic level Product Summary V DS 25 V
More informationOptiMOS -5 Power-Transistor
OptiMOS -5 Power-Transistor Product Summary V DS 4 V R DS(on),max mw Features OptiMOS - power MOSFET for automotive applications I D A PG-HSOF-5 N-channel - Enhancement mode - Normal Level AEC Q qualified
More informationTA78033AS, TA7804AS, TA7805AS, TA7807AS, TA7808AS, TA7809AS
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA7833AS, TA784AS, TA785AS, TA787AS, TA788AS, TA789AS TA7833, 4, 5, 7, 8, 9AS 1 A Three-Terminal Positive oltage Regulator The TA78***AS series
More informationOptiMOS 3 Power-Transistor
Type IPD135N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS
More informationAPQ02SN60AA-XXJ0 APQ02SN60AB DEVICE SPECIFICATION. 600V/2A N-Channel MOSFET
1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state
More informationIXFK360N15T2 IXFX360N15T2
GigaMOS TM TrenchT2 HiperFET TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK36N15T2 IXFX36N15T2 V DSS = 15V I D25 = 36A R DS(on) 4.m t rr 15ns TO-264 (IXFK) Symbol
More informationSAFETY STANDARD APPROVED METALLIZED POLYPROPYLENE CAPACITOR 海外規格メタライズドポリプロピレンコンデンサ TYPE ECQUA
1/ 30 P. 1.Scope 適用範囲 This specification covers the requirement for metallized polypropylene dielectric fixed capacitor approved by UL60384-14 CAN/CSA-E60384-14 IEC60384-14 and EN60384-14, which is applied
More informationSIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level Product Summary V DS 6 V R DS(on),max 3.5 Ω I D.28 A dv /dt rated Pb-free lead-plating; RoHS compliant Qualified according
More informationOptiMOS &!Power-Transistor
OptiMOS &!Power-Transistor Feature % N-Channel % Enhancement mode % Logic Level % High Current Rating % Excellent Gate Charge x R DS(on) product (FOM) %!Superior thermal resistance %!175 C operating temperature
More informationIXTH3N150 V DSS. High Voltage Power MOSFET = 1500V I D25 = 3A 7.3. R DS(on) N-Channel Enhancement Mode. Avalanche Rated. Fast Intrinsic Diode TO-247
High Voltage Power MOSFET S = 5V I D5 = 3A R DS(on) 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-7 Symbol Test Conditions Maximum Ratings S = 5 C to 5 C 5 V V DGR = 5 C to 5 C,
More informationSIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode / Logic level Avalanche rated Product Summary V DS - V R DS(on),max.8 W I D -.36 A Pb-free lead plating; RoHS compliant Footprint compatible
More informationRSJ151P10 Pch 100V 15A Power MOSFET
RSJ5P Pch V 5A Power MOSFET Outline V DSS V TO-263S R DS(on) (Max.) I D P D 20m 5A 50W SC-83 LPT(S) () (2) (3) Features ) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4)
More information