Product Summary Drain source voltage. Pin 1 Pin2/4 PIN 3 G D S
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1 SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Qualified according to EC Q Halogen free according to IEC Product Summary Drain source voltage V DS 6 V DrainSource onstate resistance R DS(on).8 Ω Continuous drain current I D.7 Pin Pin2/4 PIN 3 G D S VPS563 Type Package Tape and Reel Information BSP35P PGSOT223 H6327: pcs/reel Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current T = 25 C T = 7 C Pulsed drain current T = 25 C valanche energy, single pulse I D =.7, V DD = 25 V, R GS = 25 Ω I D.7.94 I D puls 4.68 E S valanche energy, periodic limited by T jmax E R.8 Reverse diode dv/dt I S =.7, V DS = 48 V, di/dt = 2 /µs, T jmax = 5 C dv/dt 6 24 mj Gate source voltage V GS ±2 V Power dissipation T = 25 C Marking BSP35P P tot.8 W Operating and storage temperature T j, T stg C IEC climatic category; DIN IEC 68 55/5/56 ESD Class; JESD224HBM Class Packaging Non dry kv/µs Rev..7 Page 2226
2 Thermal Characteristics BSP35P Parameter Symbol Values Unit Characteristics Thermal resistance, junction soldering point (Pin 4) SMD version, device on min. 6 cm 2 cooling area ) min. R thjs R thj typ. max. 25 K/W 5 7 K/W Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit Static Characteristics Drain source breakdown voltage V GS = V, I D = 25 µ Gate threshold voltage, V GS = V DS I D = 6 µ Zero gate voltage drain current V DS = 6 V, V GS = V, T j = 25 C V DS = 6 V, V GS = V, T j = 25 C Gatesource leakage current V GS = 2 V, V DS = V DrainSource onstate resistance V GS = 4.5 V, I D =.89 DrainSource onstate resistance V GS = V, I D =.7 min. typ. max. V (BR)DSS 6 V V GS(th) I DSS.5 2. I GSS R DS(on).8.4 Ω R DS(on).5.8 Ω µ n Device on 4mm*4mm*.5mm epoxy PCB FR4 with 6cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev..7 Page
3 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance V DS 2*I D *R DS(on)max, I D =.89 Input capacitance V GS = V, V DS = 25 V, f = MHz Output capacitance V GS = V, V DS = 25 V, f = MHz Reverse transfer capacitance V GS = V, V DS = 25 V, f = MHz Turnon delay time V DD = 3 V, V GS = 4.5 V, I D =.89, R G = 8 Ω Rise time V DD = 3 V, V GS = 4.5 V, I D =.89, R G = 8 Ω Turnoff delay time V DD = 3 V, V GS = 4.5 V, I D =.89, R G = 8 Ω Fall time V DD = 3 V, V GS = 4.5 V, I D =.89, R G = 8 Ω g fs.7.4 C iss 3 6 pf C oss 4 5 C rss t d(on) 7 2 S ns t r 9 4 t d(off) t f 9 28 Rev..7 Page
4 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values min. typ. max. Unit Dynamic Characteristics Gate to source charge V DD = 48 V, I D =.7 Gate to drain charge V DD = 48 V, I D =.7 Gate charge total V DD = 48 V, I D =.7, V GS = to V Gate plateau voltage V DD = 48 V, I D =.7 Q gs.7. Q gd Q g V (plateau) 3.4 V nc Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current I S.7 T = 25 C Inverse diode direct current,pulsed I SM 4.68 T = 25 C Inverse diode forward voltage V SD.97.3 V V GS = V, I F =.7 Reverse recovery time t rr ns V R = 3 V, I F =I S, di F /dt = /µs Reverse recovery charge V R = 3 V, I F =l S, di F /dt = /µs Q rr µc Rev..7 Page
5 Power Dissipation P tot = f (T ).9 W.6 Drain current I D = f(t ) parameter :V GS V Ptot.2 ID C C 6 T T Safe operating area I D = f ( V DS ) parameter : D =, T = 25 C t p = 28µs Transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T K/W 2 ID R DS(on) = V DS / I D ms ms ZthJC D =.5.2. DC single pulse V 2 V DS Rev..7 Page s 4 t p 2226
6 Typ. output characteristics I D = f (V DS ) parameter: t p = 8 µs ID P tot = 2W li kj h g f e V GS [V] a 2.5 d b 3. c 3.5 d 4. e 4.5 f 5. g 5.5 c h 6. i 6.5 j 7. k 8. b l. a Typ. drainsourceonresistance R DS(on) = f (I D ) parameter: V GS RDS(on) 2.6 Ω a V GS [V] = a 2.5 b 3. c 3.5 b d 4. e 4.5 f 5. c g 5.5 h 6. BSP35P i 6.5 d j 7. e f g i h k j l k l V 5. V DS Typ. transfer characteristics I D = f ( V GS ) V DS 2 x I D x R DS(on)max parameter: t p = 8 µs I D Typ. forward transconductance gfs = f(i D ); T j =25 C parameter: g fs 2.5 S ID 2. g fs V V GS I D Rev..7 Page
7 Drainsource onresistance R DS(on) = f (T j ) parameter:i D =.7, V GS = V 2. Ω.8 Gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS, I D = 6 µ 3. V RDS(on) % VGS(th) % typ.8.6 typ. 2% C 8 Typ. capacitances C = f(vds) Parameter: V GS = V, f= MHz 3 T j C 6 T j Forward characteristics of reverse diode I F = f (V SD ) parameter: T j, tp = 8 µs pf 2 C iss C IF C oss C rss T j = 25 C typ T j = 5 C typ T j = 25 C (98%) T j = 5 C (98%) V 4 V DS Rev..7 Page V 3. V SD 2226
8 valanche Energy E S = f (T j ) parameter: I D =.7, V DD = 25 V R GS = 25 Ω 25 Typ. gate charge V GS = f (Q Gate ) parameter: I D =.7 pulsed 6 mj V 2 ES 5 VGS 8 6,2 V DS max,8 V DS max C 65 T j nc 8. Q Gate Drainsource breakdown voltage V (BR)DSS = f (T j ) 72 V V(BR)DSS C 8 T j Rev..7 Page
9 Rev..7 Page
Product Summary. Drain source voltage V DS 200 V Drain-Source on-state resistance R DS(on) 0.4 Ω Continuous drain current I D 7 A I D.
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Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - ambient at minimum footprint R thj - - 35 K/W Electrical Characteristics, at T j = 25
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2N72DW OptiMOS Small-Signal-Transistor Features Dual N-channel Enhancement mode Logic level Avalanche rated Fast switching Product Summary V DS 6 V R DS(on),max V GS =1 V 3 W V GS =4.5 V 4 I D.3 A Qualified
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SIPMOS Power Transistor BUZ 31 H N channel Enhancement mode valanche-rated Normal Level Pin 1 Pin 2 Pin 3 G D S Type V DS R DS(on) Package Pb-free BUZ 31 H 2 V 14.5.2 Ω PG-TO-22-3 Yes Maximum Ratings Parameter
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