SKP10N60 SKB10N60, SKW10N60

Transcription

1 Fast SIGBT in NPTtechnology with soft, fast recovery antiparallel EmCon diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: Motor controls Inverter NPTTechnology for 600V applications offers: very tight parameter distribution high ruggedness, temperature stable behaviour parallel switching capability Very soft, fast recovery antiparallel EmCon diode G C E Type V CE I C V CE(sat) T j Package Ordering Code SKP10N60 600V 1 2.2V 150 C TO22B Q67040S4217 SKB10N60 TO263AB Q67040S4218 SKW10N60 TO247AC Q67040S4241 Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CE 600 V DC collector current T C = 25 C T C = 100 C Pulsed collector current, t p limited by T jmax I Cpuls 42 Turn off safe operating area 42 V CE 600V, T j 150 C Diode forward current T C = 25 C T C = 100 C I C A Diode pulsed current, t p limited by T jmax puls 42 Gateemitter voltage V GE ±20 V Short circuit withstand time 1) t SC 10 µs V GE = 15V, V CC 600V, T j 150 C Power dissipation P tot 104 W T C = 25 C Operating junction and storage temperature T j, T stg C ) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.0 Sep08

2 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R thjc 1.2 junction case Diode thermal resistance, junction case R thjcd 2.4 Thermal resistance, junction ambient R thja TO22B 62 TO247AC 40 SMD version, device on PCB 1) R thja TO263AB 40 K/W Electrical Characteristic, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. Static Characteristic Collectoremitter breakdown voltage V (BR)CES V GE =0V, I C =500µA 600 Collectoremitter saturation voltage V CE(sat) V GE = 15V, I C =1 T j =25 C T j =150 C Diode forward voltage V F V GE =0V, =1 T j =25 C T j =150 C Gateemitter threshold voltage V GE(th) I C =300µA,V CE =V GE Zero gate voltage collector current I CES V CE =600V,V GE =0V T j =25 C T j =150 C Gateemitter leakage current I GES V CE =0V,V GE =20V 100 na Transconductance g fs V CE =20V, I C =1 6.7 S Dynamic Characteristic Input capacitance C iss V CE =25V, Output capacitance C oss V GE =0V, Reverse transfer capacitance f=1mhz C rss Gate charge Q Gate V CC =480V, I C =1 V GE =15V Internal emitter inductance measured 5mm (0.197 in.) from case L E TO22B TO247AC Short circuit collector current 2) I C(SC) V GE =15V,t SC 10µs V CC 600V, T j 150 C Unit V µa pf nc 7 13 nh 100 A 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.0 Sep08

3 Switching Characteristic, Inductive Load, at T j =25 C Parameter Symbol Conditions Value min. typ. max. IGBT Characteristic Turnon delay time t d(on) T j =25 C, Rise time t r V CC =400V,I C =1, Turnoff delay time t d(off) V GE =0/15V, Fall time t f R G =25Ω, Turnon energy E on Energy losses include tail and diode Turnoff energy E off reverse recovery. Total switching energy AntiParallel Diode Characteristic Diode reverse recovery time E ts t rr t S t F Diode reverse recovery charge Q rr 310 nc Diode peak reverse recovery current I rrm 4.5 A Diode peak rate of fall of reverse recovery current during t b di rr /dt T j =25 C, V R =200V, =1, di F /dt=20/µs Unit ns mj ns 180 A/µs Switching Characteristic, Inductive Load, at T j =150 C Parameter Symbol Conditions Value min. typ. max. IGBT Characteristic Turnon delay time t d(on) T j =150 C Rise time t r V CC =400V,I C =1, Turnoff delay time t d(off) V GE =0/15V, Fall time t f R G =25Ω Turnon energy E on Energy losses include tail and diode Turnoff energy E off reverse recovery. Total switching energy E ts AntiParallel Diode Characteristic Diode reverse recovery time t rr T j =150 C 350 ns t S t F V R =200V, =1, di F /dt=20/µs Diode reverse recovery charge Q rr 690 nc Diode peak reverse recovery current I rrm 6.3 A Diode peak rate of fall of reverse recovery current during t b di rr /dt Unit ns mj 200 A/µs 3 Rev. 2.0 Sep08

4 5 I c t p =5µs IC, COLLECTOR CURRENT T C =80 C T C =110 C IC, COLLECTOR CURRENT 1 1A 15µs 50µs 200µs 1ms 1 I c 10Hz 100Hz 1kHz 10kHz 100kHz DC 0.1A 1V 10V 100V 1000V f, SWITCHING FREQUENCY V CE, COLLECTOREMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency (T j 150 C, D = 0.5, V CE = 400V, V GE = 0/+15V, R G = 25Ω) Figure 2. Safe operating area (D = 0, T C = 25 C, T j 150 C) 120W 25A 100W 2 Ptot, POWER DISSIPATION 80W 60W 40W 20W IC, COLLECTOR CURRENT 15A 1 5A 0W 25 C 50 C 75 C 100 C 125 C 25 C 50 C 75 C 100 C 125 C T C, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (T j 150 C) T C, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (V GE 15V, T j 150 C) 4 Rev. 2.0 Sep08

5 35A 35A 3 3 IC, COLLECTOR CURRENT 25A 2 15A 1 V GE =20V 15V 13V 11V 9V 7V 5V IC, COLLECTOR CURRENT 25A 2 15A 1 V GE =20V 15V 13V 11V 9V 7V 5V 5A 5A 0V 1V 2V 3V 4V 5V V CE, COLLECTOREMITTER VOLTAGE Figure 5. Typical output characteristics (T j = 25 C) 0V 1V 2V 3V 4V 5V V CE, COLLECTOREMITTER VOLTAGE Figure 6. Typical output characteristics (T j = 150 C) IC, COLLECTOR CURRENT 35A 3 25A 2 15A 1 5A T j =+25 C 55 C +150 C 0V 2V 4V 6V 8V 10V VCE(sat), COLLECTOREMITTER SATURATION VOLTAGE 4.0V 3.5V 3.0V 2.5V 2.0V 1.5V 1.0V I C = 2 I C = 1 50 C 0 C 50 C 100 C 150 C V GE, GATEEMITTER VOLTAGE Figure 7. Typical transfer characteristics (V CE = 10V) T j, JUNCTION TEMPERATURE Figure 8. Typical collectoremitter saturation voltage as a function of junction temperature (V GE = 15V) 5 Rev. 2.0 Sep08

6 t d(off) t d(off) t, SWITCHING TIMES 100ns t f t d(on) t, SWITCHING TIMES 100ns t f t d(on) t r t r 10ns 5A 1 15A 2 25A I C, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, T j = 150 C, V CE = 400V, V GE = 0/+15V, R G = 25Ω) 10ns 0Ω 20Ω 40Ω 60Ω 80Ω R G, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, T j = 150 C, V CE = 400V, V GE = 0/+15V, I C = 1) 5.5V t, SWITCHING TIMES 100ns t d(off) t f t d(on) t r 10ns 0 C 50 C 100 C 150 C VGE(th), GATEEMITTER THRESHOLD VOLTAGE 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V max. typ. min. 50 C 0 C 50 C 100 C 150 C T j, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, V CE = 400V, V GE = 0/+15V, I C = 1, R G = 25Ω) T j, JUNCTION TEMPERATURE Figure 12. Gateemitter threshold voltage as a function of junction temperature (I C = 0.3mA) 6 Rev. 2.0 Sep08

7 E, SWITCHING ENERGY LOSSES 1.6mJ 1.4mJ 1.2mJ 1.0mJ 0.8mJ 0.6mJ 0.4mJ 0.2mJ *) E on and E ts include losses due to diode recovery. E ts * E on * E off E, SWITCHING ENERGY LOSSES 1.0mJ 0.8mJ 0.6mJ 0.4mJ 0.2mJ *) E on and E ts include losses due to diode recovery. E ts * E off E on * 0.0mJ 5A 1 15A 2 25A 0.0mJ 0Ω 20Ω 40Ω 60Ω 80Ω I C, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, T j = 150 C, V CE = 400V, V GE = 0/+15V, R G = 25Ω) R G, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, T j = 150 C, V CE = 400V, V GE = 0/+15V, I C = 1) 0.8mJ E, SWITCHING ENERGY LOSSES 0.6mJ 0.4mJ 0.2mJ *) E on and E ts include losses due to diode recovery. E ts * E on * E off 0.0mJ 0 C 50 C 100 C 150 C ZthJC, TRANSIENT THERMAL IMPEDANCE 10 0 K/W 10 1 K/W 10 2 K/W D= R,(K/W) τ, (s) * * *10 4 R 1 R 2 single pulse C 1 =τ 1 /R 1 C 2 =τ 2 /R K/W 1µs 10µs 100µs 1ms 10ms 100ms 1s T j, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, V CE = 400V, V GE = 0/+15V, I C = 1, R G = 25Ω) t p, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = t p / T) 7 Rev. 2.0 Sep08

8 25V 1nF 20V C iss VGE, GATEEMITTER VOLTAGE 15V 10V 5V 120V 480V C, CAPACITANCE 100pF C oss C rss 0V 0nC 25nC 50nC 75nC 10pF 0V 10V 20V 30V Q GE, GATE CHARGE Figure 17. Typical gate charge (I C = 1) V CE, COLLECTOREMITTER VOLTAGE Figure 18. Typical capacitance as a function of collectoremitter voltage (V GE = 0V, f = 1MHz) 25µs 20 tsc, SHORT CIRCUIT WITHSTAND TIME 20µs 15µs 10µs 5µs 0µs 10V 11V 12V 13V 14V 15V IC(sc), SHORT CIRCUIT COLLECTOR CURRENT V 12V 14V 16V 18V 20V V GE, GATEEMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gateemitter voltage (V CE = 600V, start at T j = 25 C) V GE, GATEEMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (V CE 600V, T j = 150 C) 8 Rev. 2.0 Sep08

9 500ns 1400nC trr, REVERSE RECOVERY TIME 400ns 300ns 200ns 100ns = 5A = 2 = 1 Qrr, REVERSE RECOVERY CHARGE 1200nC 1000nC 800nC 600nC 400nC 200nC = 2 = 1 = 5A 0ns 10/µs 30/µs 50/µs 70/µs 90/µs di F /dt, DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (V R = 200V, T j = 125 C) 0nC 10/µs 30/µs 50/µs 70/µs 90/µs di F /dt, DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (V R = 200V, T j = 125 C) 2 100/µs Irr, REVERSE RECOVERY CURRENT 16A 12A 8A 4A = 1 = 2 = 5A dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT 80/µs 60/µs 40/µs 20/µs 10/µs 30/µs 50/µs 70/µs 90/µs /µs 10/µs 30/µs 50/µs 70/µs 90/µs di F /dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (V R = 200V, T j = 125 C) di F /dt, DIODE CURRENT SLOPE Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V R = 200V, T j = 125 C) 9 Rev. 2.0 Sep08

10 2 2.0V = 2 15A IF, FORWARD CURRENT 1 5A 25 C 150 C 100 C VF, FORWARD VOLTAGE 1.5V = 1 55 C 0.0V 0.5V 1.0V 1.5V 2.0V V F, FORWARD VOLTAGE Figure 25. Typical diode forward current as a function of forward voltage 1.0V 40 C 0 C 40 C 80 C 120 C T j, JUNCTION TEMPERATURE Figure 26. Typical diode forward voltage as a function of junction temperature ZthJCD, TRANSIENT THERMAL IMPEDANCE 10 0 K/W 10 1 K/W D= single pulse R,(K/W) τ, (s) * * * *10 5 R 1 R 2 C 1 =τ 1 /R 1 C 2 =τ 2 /R K/W 1µs 10µs 100µs 1ms 10ms 100ms 1s t p, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D = t p / T) 10 Rev. 2.0 Sep08

11 TO22B dimensions symbol [mm] [inch] min max min max A B C D E F G H K L M 2.54 typ. 0.1 typ. N P T TO263AB (D 2 Pak) dimensions symbol [mm] [inch] min max min max A B C D E 2.54 typ. 0.1 typ. F G 5.08 typ. 0.2 typ. H K L M N 15 typ typ. P Q R 8 max 8 max S T U V W X Y Z Rev. 2.0 Sep08

12 12 Rev. 2.0 Sep MIN MAX MIN MAX mm Z8B M M PGTO2473

13 i,v di F /dt t =t + t rr S F Q =Q + Q rr S F t rr I F t S t F Q S Q F 10% I rrm t I rrm di 90% I rrm rr /dt V R Figure C. Definition of diodes switching characteristics T(t) j τ 1 r1 τ 2 r2 τ r n n p(t) r r 1 2 n r Figure A. Definition of switching times T C Figure D. Thermal equivalent circuit Figure B. Definition of switching losses 13 Rev. 2.0 Sep08

14 Published by Infineon Technologies AG Munich, Germany 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 14 Rev. 2.0 Sep08